CN111106060A - 半导体装置及其形成方法 - Google Patents
半导体装置及其形成方法 Download PDFInfo
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- CN111106060A CN111106060A CN201911017015.8A CN201911017015A CN111106060A CN 111106060 A CN111106060 A CN 111106060A CN 201911017015 A CN201911017015 A CN 201911017015A CN 111106060 A CN111106060 A CN 111106060A
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Abstract
提供一种半导体装置的形成方法,包括:在一介电层中形成一沟槽,上述沟槽包括一互连部与一通孔部,上述通孔部暴露出一下层的导体特征部件。上述方法还包括:在上述沟槽中沉积一种子层;在上述种子层上沉积一碳层;施行一碳溶解工艺,而将一石墨烯层形成于上述种子层与上述下层的导体特征部件之间;以及以一导体材料填入上述沟槽的剩余部分。
Description
技术领域
本发明实施例涉及半导体装置及其形成方法,特别涉及包括用以降低接触电阻的石墨烯层的半导体装置及其形成方法。
背景技术
半导体集成电路(integrated circuit;IC)工业已历经了指数式的成长。在集成电路的材料与设计的技术发展下,已产出数个世代的集成电路,每个世代均比其前一个世代具有较小且更复杂的电路。在集成电路革命的过程中,通常是随着功能密度(例如:每单位芯片面积的互连的装置数量)的增加而缩减几何尺寸(例如:使用一工艺所能形成的最小构件(或是线))。这样的尺寸缩减的过程会通过增加制造效率与降低关连的成本而获得效益。
这样的尺寸缩减亦会增加所加工及制造的集成电路的复杂度,并为了实现上述发展,在集成电路的加工与制造方面也需要类似的发展。例如,随着互连线的宽度的持续缩减,通孔结构底部阻障层与金属导体之间的接触面积变得愈来愈小,其导致上述通孔结构与上述金属导体之间的高接触电阻。特别是随着技术节点的缩减,以减少这种接触电阻为佳。
发明内容
一实施例涉及一种半导体装置的形成方法,包括:在一介电层中形成一沟槽,上述沟槽包括一互连部与一通孔部,上述通孔部暴露出一下层的导体特征部件;在上述沟槽中沉积一种子层;在上述种子层上沉积一碳层;施行一碳溶解工艺,而将一石墨烯层形成于上述种子层与上述下层的导体特征部件之间;以及以一导体材料填入上述沟槽的剩余部分。
另一实施例涉及一种半导体装置的形成方法,包括:在一介电层中形成一沟槽,上述沟槽暴露出一下层的导体特征部件;在上述沟槽中沉积一种子层;在上述种子层上沉积一碳层;施行一碳溶解工艺,而将一石墨烯层形成于上述种子层与上述下层的导体特征部件之间;以及移除上述碳层。
又另一实施例涉及一种半导体装置,包括:一导体特征部件,嵌于一层间介电(interlayer dielectric;ILD)层中;一互连特征部件,嵌于上述层间介电层中;一通孔结构,将上述导体特征部件电性连接至上述互连特征部件;一石墨烯层,位于上述通孔结构与上述导体特征部件之间,上述石墨烯层直接接触上述导体特征部件;以及一种子层,位于上述石墨烯层与上述通孔结构之间。
附图说明
根据以下的详细说明并配合说明书附图做完整公开。应注意的是,根据本产业的一般作业,图示并未必按照比例绘制。事实上,可能任意的放大或缩小元件的尺寸,以做清楚的说明。
图1A是显示关于一范例的方式的用于在通孔结构与导体特征部件之间形成石墨烯层的工艺。
图1B是显示关于一范例的方式的用于在通孔结构与导体特征部件之间形成石墨烯层的工艺。
图1C是显示关于一范例的方式的用于在通孔结构与导体特征部件之间形成石墨烯层的工艺。
图1D是显示关于一范例的方式的用于在通孔结构与导体特征部件之间形成石墨烯层的工艺。
图1E是显示关于一范例的方式的用于在通孔结构与导体特征部件之间形成石墨烯层的工艺。
图1F是显示关于一范例的方式的用于在通孔结构与导体特征部件之间形成石墨烯层的工艺。
图1G是显示关于一范例的方式的用于在通孔结构与导体特征部件之间形成石墨烯层的工艺。
图2A是显示关于一范例的方式的用于在通孔结构与导体特征部件之间形成石墨烯层的工艺。
图2B是显示关于一范例的方式的用于在通孔结构与导体特征部件之间形成石墨烯层的工艺。
图2C是显示关于一范例的方式的用于在通孔结构与导体特征部件之间形成石墨烯层的工艺。
图2D是显示关于一范例的方式的用于在通孔结构与导体特征部件之间形成石墨烯层的工艺。
图2E是显示关于一范例的方式的用于在通孔结构与导体特征部件之间形成石墨烯层的工艺。
图2F是显示关于一范例的方式的用于在通孔结构与导体特征部件之间形成石墨烯层的工艺。
图2G是显示关于一范例的方式的用于在通孔结构与导体特征部件之间形成石墨烯层的工艺。
图3是一流程图,显示关于一范例的方式的用于在通孔结构与导体特征部件之间形成石墨烯层的工艺。
附图标记说明:
100、200 沟槽
101、201 上部
102、202 介电层
103、203 下部
104、204 导体特征部件
106、206 种子层
108、208 工艺
110、210 碳层
112、212 碳沉积工艺
114、214 石墨烯层
116、216 碳溶解工艺
118、218 移除工艺
120、220 互连
121 通孔结构
122、222 沉积工艺
124、224 化学机械研磨工艺
205 预填层
300 方法
302、304、306、308、 工艺
310、312
具体实施方式
要了解的是,以下的公开内容提供许多不同的实施例或范例以实施本发明实施例的不同构件。以下的公开内容叙述各个构件及其排列方式的特定实施例或范例,以简化本发明实施例的说明。当然,这些特定的范例并非用以限定。例如,元件的尺寸并非受限于所公开的范围或值,但可能依存于工艺条件及/或装置所需求的性质。此外,若是本发明实施例叙述了一第一构件形成于一第二构件之上或上方,即表示其可能包括上述第一构件与上述第二构件是直接接触的实施例,亦可能包括了有附加构件形成于上述第一构件与上述第二构件之间,而使上述第一构件与第二构件可能未直接接触的实施例。为了简洁,可能以任意的比例示出各种构件。此外,本发明实施例可能会在各种实施例重复使用相同的元件符号。这样的重复是为了叙述上的简化与明确,而非意指所讨论的不同实施例及/或结构之间的关系。
此外,其与空间相关用词。例如“在…下方”、“下方”、“较低的”、“上方”、“较高的”及类似的用词,为了便于描述图示中一个元件或构件与另一个(些)元件或构件之间的关系。除了在附图中示出的方位外,这些空间相关用词意欲包括使用中或操作中的装置的不同方位。装置可能被转向不同方位(旋转90度或其他方位),则在此使用的空间相关词也可依此相同解释。
如前所述,特别是随着技术节点的缩减,以减少导体结构之间的接触电阻为佳。根据在本说明书叙述的方式,在一通孔结构(via)与一导体特征部件之间形成一石墨烯层。上述石墨烯层的存在会减少上述通孔结构与上述导体特征部件之间的接触电阻。上述通孔结构与上述导体特征部件之间的接触电阻的减少会改善装置的效能。
第1A~1G图是显示用于在通孔结构与导体特征部件之间形成石墨烯层的工艺的附图。图1A显示将一沟槽100形成至一介电层102中。沟槽100包括一上部101与一下部103。沟槽100暴露出下层的导体特征部件104。
介电层102可以是一层间介电层(Interlayer Dielectric Layer;ILD)。上述层间介电层可包括例如氮化硅等的一介电材料,亦可使用其他的介电材料。可以在形成至一半导体基底中的各种装置的上方,沉积上述层间介电层。例如,可以将上述层间介电层沉积于晶体管装置的上方,上述晶体管装置包括栅极构件、源极构件与漏极构件。可以将上述层间介电层形成为多层的形式,每层具有特定配置的多个互连线。上述互连线为例如金属线等的导体结构,连接各种装置(例如:晶体管),以形成特定的电路。形成在一特定的层间介电层中的互连线,可经由一通孔结构而与来自其他层的互连线连接。
导体特征部件104可以是各种导体特征部件的一种。在一例子中,导体特征部件104是在介电层102中的较低层的一金属互连线。在一些例子中,导体特征部件104可以是一栅极接触或一源极/漏极接触。亦可考虑其他形式的导体特征部件。
导体特征部件104是被沟槽100所暴露。沟槽100包括一上部101与一下部103。在本例中,下部103的尺寸及形状是为了在其中形成一通孔结构。因此,亦可将下部103称为一通孔部。上部101的尺寸及形状是为了在其中形成一互连线,因此亦可将其称为一互连部。可经由各种光刻工艺来形成沟槽100。例如,可以先通过一蚀刻工艺的施加,形成从介电层102的顶部向下延伸至导体特征部件104的一孔洞,形成下部103。然后,可施加一第二图形化与蚀刻工艺,以形成沟槽100的上部101。用以形成上部101的蚀刻工艺,可施加为形成延伸至介电层102但未整个延伸至导体特征部件104的孔洞。
图1B示出用以在沟槽100中沉积一种子层106的工艺108。可以以各种材料中的一种来形成种子层106。这样的材料包括但不限于钴、镍、铁或铜。这些是可用来作为石墨烯成长的触媒的材料的范例。可使用用来作为石墨烯成长的触媒的其他材料来形成种子层106。种子层106的厚度可以在约5埃~100埃的范围内。
种子层106是以共形(conformal)的形式形成。换句话说,种子层106遵循沟槽100的侧壁及底部的形状。用于形成种子层106的工艺108可以是各种工艺的一种,其包括但不限于:物理气相沉积(physical vapor deposition;PVD)、原子层沉积(atomic-layerdeposition;ALD)、化学气相沉积(chemical vapor deposition;CVD)、等离子体辅助原子层沉积(plasma enhanced atomic-layer deposition;PEALD)或等离子体辅助化学气相沉积(plasma enhanced chemical vapor deposition;PECVD)。亦可使用其他工艺。
物理气相沉积是如以下的工艺:以蒸气的形式置入例如碳等的材料,然后从上述蒸气将上述材料沉积至一基底上。一原子层沉积工艺包括按序并交替施加不同材料,以在已置于一沉积室(deposition chamber)的一基底上形成一薄膜层。特别是,上述原子层沉积工艺包括数个循环。每个循环包括一沉积工艺与一清除工艺(purge process)。上述沉积工艺用于在沉积不同形式的材料之间的交替的一组循环。每个循环的清除工艺是用来在施行下个循环之前,从沉积室移除材料。
原子层沉积工艺的一种形式是一等离子体辅助原子层沉积工艺,每个循环包括一等离子体处理工艺及后接的一等离子体后清除工艺。上述等离子体处理工艺提供了改善原子层沉积工艺的品质的数个效益。
一化学气相沉积工艺包括将上述基底暴露于一挥发性的前驱物,上述前驱物在上述基板上发生反应或分解,而产生所需的沉积物。化学气相沉积工艺的一种形式为一等离子体辅助化学气相沉积工艺。一等离子体辅助化学气相沉积工艺使用等离子体来强化沉积率,其得以让工艺在较低温下施行。
图1C示出经由一碳沉积工艺112来沉积一碳层110。碳沉积工艺112可共形式地在种子层106上沉积碳层110。碳沉积工艺112可以是以下的一种:物理气相沉积、原子层沉积、化学气相沉积、等离子体辅助原子层沉积或等离子体辅助化学气相沉积。碳层110的厚度可以在约5埃~100埃的范围内。
在沉积碳层110之后,施行一碳溶解工艺116,如图1D所示。碳溶解工艺116使来自碳层110的碳原子迁移至介电层102与导体特征部件104。通过这样的迁移,将一石墨烯层114置于导体特征部件104与种子层106之间以及置于介电层102与种子层106之间。
在一例子中,碳溶解工艺116包括一退火工艺。上述退火工艺可在约200~1200℃的温度范围施行。上述退火工艺亦可在约0.25torr~30atm的压力范围施行。上述退火工艺将种子层106加热至高温。在此一高温状态,来自碳层110的一些碳原子可迁移而通过种子层106,并在种子层106的另一侧形成一或多层的石墨烯层114。
石墨烯是碳的同素异形体,其包括排列成六方晶格的一层碳原子。在一些例子中,石墨烯层114可包括来自一至十层的碳原子的任何部分。石墨烯具有各种令人满意的性质。其中一种令人满意的性质是,石墨烯具有高电导(high conductance)。因此,石墨烯层114的存在会降低导体特征部件104与种子层106之间的接触电阻。
在形成石墨烯层114之后,如图1E所示,可经由一移除工艺118而将碳层110移除。移除工艺118可以是例如一选择性蚀刻工艺。可将一选择性蚀刻工艺设计成移除碳层110而实质上不影响下层的种子层106。上述选择性蚀刻工艺可以是一湿蚀刻工艺或一干蚀刻工艺。
在干蚀刻移除工艺的情况,上述干蚀刻工艺可包括以下。在离子束蚀刻(Ion-BeamEtching;IBE)的情况,上述蚀刻工艺可以在约100~2000V的范围中的电源级别下施行,其离子束的角度可以是在约0~70度的范围内。用于上述蚀刻工艺的气体可包括以下的至少一种:氦(He)、氖(Ne)、氩(Ar)、氪(Kr)及氙(Xe)。在反应性离子蚀刻的情况,上述蚀刻工艺可以在约100~1500瓦特的范围中的功率、约0~300V的范围中的偏压下施行,并使用例如CH3COOH、CH3OH或CH3CH2OH等的有机气体。在另一例子中,上述干蚀刻工艺可以在约100~1500瓦特的范围中的功率、约0~500V的范围中的偏压下施行,并使用例如CF4、CHF3、CH3F、CH2F2、C4F8、C4F6、N2、O2或Ar等的气体。在另一例子中,上述干蚀刻工艺可以是一反应性离子蚀刻,在约100~2000瓦特的范围中的功率、约0~500V的范围中的偏压下施行,并使用例如Cl2、SiCl4、BCl3、CF4、CHF3、CH3F、CH2F2、C4F8、C4F6、N2、O2或Ar等的气体。这样用于干蚀刻工艺的例子是用于移除碳层110的理想例子。
在湿蚀刻移除工艺的情况,湿式清洁成分可包括下列的至少一种:苯乙腈(tolunitrile)、4-甲基-3-硝苯甲腈(4-Methyl-3-nitrobenzonitrile)、4-(溴甲基)苯甲腈(4-(Bromomethyl)benzonitrile)、4-(氯甲基)苯甲腈(4-(Chloromethyl)benzonitrile)、2-氟-4-(三氟甲基)苯甲腈(2-Fluoro-4-(trifluoromethyl)benzonitrile、4-(三氟甲基)苯甲腈(4-(Trifluoromethyl)benzonitrile)、二乙二醇单丁醚(Diethylene glycol monobutyl ether)、2-(2-丁氧乙氧)乙酸乙酯(2-(2-Butoxyethoxy)ethyl acetate)、二乙二醇二甲醚(Diethylene glycol dimethyl ether)、二甲基亚砜(Dimethyl sulfoxide)、二甲基甲酰胺(Dimethylformamide)、聚(乙二醇)双胺(Poly(ethylene glycol)bis(amine))、(2-甲基丁基)胺((2-Methylbutyl)amine)、参(2-乙基己基)胺(Tris(2-ethylhexyl)amine)、(4-异硫氰基苯基)(3-甲基苯基)胺((4-Isothiocyanatophenyl)(3-methylphenyl)amine)、聚(乙二醇)甲基醚胺(Poly(ethyleneglycol)methyl ether amine)、聚(乙二醇)二胺(Poly(ethylene glycol)diamine)、三乙醇胺盐酸盐(Triethanolamine hydrochloride)、三乙醇胺(Triethanolamine)、三(2-羟乙基)胺(Trolamine)、三(2-羟乙基)胺水杨酸酯(Trolamine salicylate)、2-氯乙基乙烯醚(2-Chloroethyl vinyl ether)、2-[4-(二甲胺基)苯基]乙醇(2-[4-(Dimethylamino)phenyl]ethanol)、四乙基乙二胺(Tetraethylethylenediamine)、乙酸铵(Ammoniumacetate)、氯化铵(Ammonium chloride)、硫酸铵(Ammonium sulfate)、甲酸铵(Ammoniumformate)、硝酸铵(Ammonium nitrate)、碳酸铵(Ammonium carbonate)、氟化铵(Ammoniumfluoride)、过硫酸铵(Ammonium Persulphate)、胺磺酸铵(Ammonium sulfamate)、磷酸铵(Ammonium phosphate)、1-乙酰胍(1-Acetylguanidine)或一般酸(general acid)。还有,上述湿蚀刻工艺可使用一抑制剂成分,其包括下列至少一种:1-氯苯并三唑(1-Chlorobenzotriazole)、5-氯苯并三唑(5-Chlorobenzotriazole)、5-甲基-1H-苯并三唑(5-Methyl-1H-benzotriazole)、1-甲基-1H-1,2,3-苯并三唑-5-甲醛(1-methyl-1H-1,2,3-benzotriazole-5-carbaldehyde)、1-甲基-1H-1,2,3-苯并三唑-5-胺(1-Methyl-1H-1,2,3-benzotriazol-5-amine)、1-甲基咪唑(1-Methylimidazole)、2-巯基-1-甲基咪唑(2-Mercapto-1-methylimidazole)、1-甲基咪唑-2-磺酰氯(1-Methylimidazole-2-sulfonylchloride)、5-氯-1-甲基咪唑(5-Chloro-1-methylimidazole)、5-碘基-1-甲基咪唑(5-Iodo-1-methylimidazole)、甲巯咪唑(Thiamazole)、氯化1-甲基咪唑(1-Methylimidazolium chloride)、2,5-二溴基-1-甲基-1H-咪唑(2,5-Dibromo-1-methyl-1H-imidazole)、1H-苯并三唑-4-磺酸(1H-Benzotriazole-4-sulfonic acid)、苯并三唑类(BTA-like)等等。这样用于湿蚀刻工艺的例子是用于移除碳层110的理想例子。
图1F显示一沉积工艺122,其用于沉积金属以形成通孔结构121与互连120。在一些例子中,上述金属的互连120可类似于下层的导体特征部件104。在一些例子中,上述金属的互连120与通孔结构121可包括铜,亦可使用其他导体材料。
图1G示出在施行一化学机械研磨(Chemical Mechanical Polishing;CMP)工艺124后的金属的互连120与通孔结构121。这样的工艺进行平坦化并暴露出介电层102(层间介电层)的表面。在施行上述化学机械研磨工艺之后,可沉积后续的层间介电层。这样的后续的层间介电层亦可具有如上述的使用石墨烯层而形成于其中的金属的互连及通孔结构,以降低接触电阻。
第2A~2G图是显示用于在通孔结构与导体特征部件之间形成石墨烯层的工艺的附图。图2A显示将一沟槽200形成至一介电层202中。沟槽200包括一上部201与一下部203。沟槽200暴露出下层的导体特征部件204。
介电层202可以是一层间介电层(Interlayer Dielectric Layer;ILD)。上述层间介电层可包括例如氮化硅等的一介电材料,亦可使用其他的介电材料。可以在形成至一半导体基底中的各种装置的上方,沉积上述层间介电层。例如,可以将上述层间介电层沉积于晶体管装置的上方,上述晶体管装置包括栅极构件、源极构件与漏极构件。可以将上述层间介电层形成为多层的形式,每层具有特定配置的多个互连线。上述互连线为例如金属线等的导体结构,连接各种装置(例如:晶体管),以形成特定的电路。形成在一特定的层间介电层中的互连线,可经由一通孔结构而与来自其他层的互连线连接。
导体特征部件204可以是各种导体特征部件的一种。在一例子中,导体特征部件204是在介电层202中的较低层的一金属互连线。在一些例子中,导体特征部件204可以是一栅极接触或一源极/漏极接触。亦可考虑其他形式的导体特征部件。
导体特征部件204是被沟槽200所暴露。沟槽200包括一上部201与一下部203。在本例中,下部203的尺寸及形状是为了在其中形成一通孔结构。因此,亦可将下部203称为一通孔部。上部201的尺寸及形状是为了在其中形成一互连线,因此亦可将其称为一互连部。可经由各种光刻工艺来形成沟槽200。例如,可以先通过一蚀刻工艺的施加,形成从介电层202的顶部向下延伸至导体特征部件204的一孔洞,形成下部203。然后,可施加一第二图形化与蚀刻工艺,以形成上述通孔结构的上部201。用以形成上部201的蚀刻工艺,可施加为形成延伸至介电层202但未整个延伸至导体特征部件204的孔洞。
图2B示出用以在沟槽200中沉积一种子层206的工艺208。示于第2A~2G图的例子与示于第1A~1G图的例子的不同之处在于,在施作种子层之前,以一预填层(pre-filllayer)205填入沟槽200的下部203。在一些例子中,是以与种子层206相同的材料来形成预填层205。例如,若以镍形成种子层206,则预填层205可以包括镍。然而,在一些例子中,可以以与种子层206不同的材料来形成预填层205。在一些例子中,可以以下列方法的一种来沉积预填层205:无电沉积(Electro-Less Deposition;ELD)、原子层沉积或化学气相沉积。
可以以各种材料中的一种来形成种子层206。这样的材料包括但不限于钴、镍、铁或铜。这些是可用来作为石墨烯成长的触媒的材料的范例。可使用用来作为石墨烯成长的触媒的其他材料来形成种子层206。种子层206的厚度可以在约5埃~100埃的范围内。
种子层206是以共形的形式形成。换句话说,种子层206遵循沟槽200的上部201的侧壁及底部的形状。用于形成种子层206的工艺208可以是各种工艺的一种,其包括但不限于:物理气相沉积(physical vapor deposition;PVD)、原子层沉积(atomic-layerdeposition;ALD)、化学气相沉积(chemical vapor deposition;CVD)、等离子体辅助原子层沉积(plasma enhanced atomic-layer deposition;PEALD)或等离子体辅助化学气相沉积(plasma enhanced chemical vapor deposition;PECVD)。亦可使用其他工艺。
图2C示出经由一碳沉积工艺212来沉积一碳层210。碳沉积工艺212可共形式地在种子层206上沉积碳层210。碳沉积工艺212可以是以下的一种:物理气相沉积、原子层沉积、化学气相沉积、等离子体辅助原子层沉积或等离子体辅助化学气相沉积。碳层210的厚度可以在约5埃~100埃的范围内。
在沉积碳层210之后,施行一碳溶解工艺216,如图2D所示。碳溶解工艺216使来自碳层210的碳原子迁移至介电层202与导体特征部件204。如图2D所示,上述碳原子的迁移可通过预填层205以及种子层206。通过这样的迁移,将一石墨烯层214置于导体特征部件204与预填层205之间以及置于介电层202与种子层206之间。
碳溶解工艺216可包括一退火工艺。上述退火工艺可在约200~1200℃的温度范围施行。上述退火工艺亦可在约0.25torr~30atm的压力范围施行。上述退火工艺将预填层205以及种子层206加热至高温。在此一高温状态,来自碳层210的一些碳原子可迁移而通过预填层205以及种子层206,并在预填层205以及种子层206的另一侧形成一或多层的石墨烯层214。
在形成石墨烯层214之后,如图2E所示,可经由一移除工艺218而将碳层210移除。移除工艺218可以是例如一选择性蚀刻工艺。可将一选择性蚀刻工艺设计成移除碳层210而实质上不影响下层的种子层206。上述选择性蚀刻工艺可以是一湿蚀刻工艺或一干蚀刻工艺。
图2F显示一沉积工艺222,其用于沉积金属以形成互连220。预填层205是作为一通孔结构,因为其为一导体材料。在一些例子中,上述金属的互连220可类似于下层的导体特征部件204。在一些例子中,上述金属的互连220与作为通孔结构的预填层205可包括铜,亦可使用其他导体材料。
图2G示出在施行一化学机械研磨(Chemical Mechanical Polishing;CMP)工艺224后的金属的互连220。这样的工艺进行平坦化并暴露出介电层202(层间介电层)的表面。在施行上述化学机械研磨工艺之后,可沉积后续的层间介电层。这样的后续的层间介电层亦可具有如上述的使用石墨烯层而形成于其中的金属的互连及通孔结构,以降低接触电阻。
图3是一流程图,显示用于在一通孔结构(例如:通孔结构121、预填层205)与一导体特征部件(例如:104、204)之间形成一石墨烯层(例如:114、214)的方法300。根据本例,方法300包括一工艺302,其用以在一介电层(例如:102、202)中形成一沟槽(例如:100、200),上述沟槽包括一互连部(例如:上部101、201)与一通孔部(例如:下部103、203),上述通孔部暴露出一下层的导体特征部件。上述沟槽可经由各种光刻工艺而形成。例如,可以先通过一蚀刻工艺的施加,形成从上述介电层的顶部向下延伸至上述导体特征部件的一孔洞,形成上述通孔部。然后,可施加一第二图形化与蚀刻工艺,以形成上述沟槽的上述互连部。用以形成上述互连部的蚀刻工艺,可施加为形成延伸至上述介电层但未整个延伸至上述导体特征部件的孔洞。
方法300还包括一工艺304,其用以在上述沟槽中沉积一种子层(例如:106、206)。可以以各种材料中的一种来形成上述种子层。这样的材料包括但不限于钴、镍、铁或铜。这些是可用来作为石墨烯成长的触媒的材料的范例。可使用用来作为石墨烯成长的触媒的其他材料来形成上述种子层。上述种子层的厚度可以在约5埃~100埃的范围内。在一些例子中,例如如图1B所示者,在上述互连部与上述通孔部都形成上述种子层。在一些例子中,例如如图2B所示者,是在上述互连部且在上述预填层(例如:205)的顶部上形成上述种子层。
方法300还包括一工艺306,其用以在上述种子层上沉积一碳层(例如:110、210)。上述碳沉积工艺可共形式地在上述种子层上沉积上述碳层。上述碳沉积工艺可以是以下的一种:物理气相沉积、原子层沉积、化学气相沉积、等离子体辅助原子层沉积或等离子体辅助化学气相沉积。上述碳层的厚度可以在约5埃~100埃的范围内。
方法300还包括一工艺308,其用以施行一碳溶解工艺,而将一石墨烯层(例如:114、214)形成于上述种子层与上述下层的导体特征部件之间。上述碳溶解工艺使来自上述碳层的碳原子迁移至上述介电层与上述导体层。通过这样的迁移,将一石墨烯层置于上述导体特征部件与上述种子层之间以及置于上述介电层与上述种子层之间。上述碳溶解工艺包括一退火工艺。上述退火工艺可在约200~1200℃的温度范围施行。上述退火工艺亦可在约0.25torr~30atm的压力范围施行。
方法300还包括一工艺310,其用以移除上述碳层。上述移除工艺可以是例如一选择性蚀刻工艺。可将一选择性蚀刻工艺设计成移除上述碳层而实质上不影响下层的上述种子层。上述选择性蚀刻工艺可以是一湿蚀刻工艺或一干蚀刻工艺。
方法300还包括一工艺312,其用以以一导体材料填入上述沟槽的剩余部分。填入上述沟槽可包括一沉积工艺,其用于沉积金属以形成一互连特征组件(例如:互连120、220)。在一些例子中,互连120可类似于下层的导体特征部件104。在无预填层(例如:205)的一些例子中,填入上述沟槽包括填入上述沟槽的上述下部,以形成上述通孔结构(例如:121)。在一些例子中,上述金属的互连可类似于上述下层的导体特征部件。在一些例子中,上述金属的互连与上述通孔结构可包括铜,亦可使用其他导体材料。
在填充上述沟槽之后,可施行一化学机械研磨(Chemical MechanicalPolishing;CMP)工艺。这样的工艺进行平坦化并暴露出上述层间介电层的表面。在施行上述化学机械研磨工艺之后,可沉积后续的层间介电层。这样的后续的层间介电层亦可具有如上述的使用石墨烯层而形成于其中的金属的互连及通孔结构,以降低接触电阻。
关于一些实施例,是提供一种半导体装置的形成方法,包括:在一介电层中形成一沟槽,上述沟槽包括一互连部与一通孔部,上述通孔部暴露出一下层的导体特征部件;在上述沟槽中沉积一种子层;在上述种子层上沉积一碳层;施行一碳溶解工艺,而将一石墨烯层形成于上述种子层与上述下层的导体特征部件之间;以及以一导体材料填入上述沟槽的剩余部分。
在一实施例中,在上述互连部与上述通孔部都形成上述种子层。在一实施例中,上述半导体装置的形成方法还包括:在形成上述种子层之前,在上述通孔部沉积一预填材料,其中在上述沟槽,上述种子层是形成在上述预填层上。在一实施例中,上述种子层包括以下之一:镍、钴、铁与铜。在一实施例中,上述种子层的厚度是在约5埃~100埃的范围内。在一实施例中,是经由以下之一沉积上述碳层:物理气相沉积(physical vapor deposition;PVD)、原子层沉积(atomic-layer deposition;ALD)、化学气相沉积(chemical vapordeposition;CVD)、等离子体辅助原子层沉积(plasma enhanced atomic-layerdeposition;PEALD)或等离子体辅助化学气相沉积(plasma enhanced chemical vapordeposition;PECVD)。在一实施例中,上述碳层的厚度是在约5埃~100埃的范围内。在一实施例中,上述碳溶解工艺包括在约200~1200℃的温度范围施行的一退火工艺。在一实施例中,是以约0.25torr~30atm的压力范围施行上述退火工艺。在一实施例中,上述半导体装置的形成方法还包括:在上述碳溶解工艺之后,移除上述碳层。在一实施例中,是使用湿蚀刻或干蚀刻的一种来移除上述碳层。
关于另一些实施例,是提供一种半导体装置的形成方法,包括:在一介电层中形成一沟槽,上述沟槽暴露出一下层的导体特征部件;在上述沟槽中沉积一种子层;在上述种子层上沉积一碳层;施行一碳溶解工艺,而将一石墨烯层形成于上述种子层与上述下层的导体特征部件之间;以及移除上述碳层。
在一实施例中,上述沟槽包括一上部与一下部。在一实施例中,上述半导体装置的形成方法还包括:在上述上部与上述下部都形成上述种子层。在一实施例中,上述半导体装置的形成方法还包括:在上述下部沉积一预填层。在一实施例中,沉积上述种子层还包括在上述上部及在上述预填层上沉积上述种子层。在一实施例中,上述种子层包括以下之一:镍、钴、铁与铜。
关于又另一些实施例,是提供一种半导体装置,包括:一导体特征部件,嵌于一层间介电(interlayer dielectric;ILD)层中;一互连特征部件,嵌于上述层间介电层中;一通孔结构,将上述导体特征部件电性连接至上述互连特征部件;一石墨烯层,位于上述通孔结构与上述导体特征部件之间,上述石墨烯层直接接触上述导体特征部件;以及一种子层,位于上述石墨烯层与上述通孔结构之间。
在一实施例中,上述石墨烯层的厚度为1~10个原子。在一实施例中,上述种子层包括以下之一:镍、钴、铁与铜。
前述内文概述了许多实施例的特征,使所属技术领域中技术人员可以从各个方面更佳地了解本发明实施例。所属技术领域中技术人员应可理解,且可轻易地以本发明实施例为基础来设计或修饰其他工艺及结构,并以此达到相同的目的及/或达到与在此介绍的实施例等相同的优点。所属技术领域中技术人员也应了解这些均等的结构并未背离本发明实施例的发明构思与范围。在不背离本发明实施例的发明构思与范围的前提下,可对本发明实施例进行各种改变、置换或修改。
Claims (1)
1.一种半导体装置的形成方法,包括:
在一介电层中形成一沟槽,该沟槽包括一互连部与一通孔部,该通孔部暴露出一下层的导体特征部件;
在该沟槽中沉积一种子层;
在该种子层上沉积一碳层;
施行一碳溶解工艺,而将一石墨烯层形成于该种子层与该下层的导体特征部件之间;以及
以一导体材料填入该沟槽的剩余部分。
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