CN111081828B - Growth method of Micro LED epitaxial wafer and Micro LED epitaxial wafer - Google Patents
Growth method of Micro LED epitaxial wafer and Micro LED epitaxial wafer Download PDFInfo
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- CN111081828B CN111081828B CN201911001464.3A CN201911001464A CN111081828B CN 111081828 B CN111081828 B CN 111081828B CN 201911001464 A CN201911001464 A CN 201911001464A CN 111081828 B CN111081828 B CN 111081828B
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
Abstract
The disclosure discloses a growth method of a Micro LED epitaxial wafer and the Micro LED epitaxial wafer, and belongs to the technical field of semiconductors. The growth method comprises the following steps: putting the substrate on a bearing body in reaction equipment, and pretreating the substrate; growing a low-temperature buffer layer, a high-temperature epitaxial layer, an N-type semiconductor layer, an active layer, an electron barrier layer and a P-type semiconductor layer on a substrate in sequence, wherein the active layer comprises a plurality of periodic structures which are stacked in sequence, and each periodic structure comprises a quantum well and a quantum barrier which are stacked in sequence; the low-temperature buffer layer, the high-temperature epitaxial layer, the N-type semiconductor layer, the quantum well, the quantum barrier, the electron barrier layer and the P-type semiconductor layer are formed by introducing reaction gas into the reaction equipment after stopping introducing the reaction gas into the reaction equipment and adjusting the growth conditions provided by the reaction equipment in multiple stages. The present disclosure can satisfy the requirements of Micro LEDs.
Description
Technical Field
The disclosure relates to the technical field of semiconductors, in particular to a growth method of a Micro LED epitaxial wafer and the Micro LED epitaxial wafer.
Background
An LED (Light Emitting Diode, chinese) is a semiconductor electronic component capable of Emitting Light. As a novel efficient, environment-friendly and green solid-state illumination light source, LEDs are rapidly and widely used, for example, in the fields of traffic signal lamps, interior and exterior lamps of automobiles, urban landscape illumination, mobile phone backlight sources and the like.
Micro (chinese: Micro) is a new generation display technology, which refers to a high density Micro-sized LED array integrated together, i.e. the Micro-scaling and matrixing technology of LEDs. The LED lamp inherits the characteristics of high efficiency, high brightness, high reliability, short reaction time and the like of the LED, and has the characteristics of self-luminescence and no need of a backlight source, so that the LED lamp has the advantages of energy conservation, simple structure, small volume, thin thickness and the like.
In the course of implementing the present disclosure, the inventors found that the prior art has at least the following problems:
the Micro LED has high requirements on the consistency (such as wavelength consistency, brightness consistency and thickness consistency) of each chip in the LED array and the surface tiny particles, but the chip obtained by the existing LED epitaxial growth method cannot meet the requirements.
Disclosure of Invention
The embodiment of the disclosure provides a growth method of a Micro LED epitaxial wafer and the Micro LED epitaxial wafer, which can improve the consistency of each region of the epitaxial wafer, reduce surface particles and solve the problem that the prior art cannot meet the requirements of the Micro LED. The technical scheme is as follows:
in one aspect, an embodiment of the present disclosure provides a method for growing a Micro LED epitaxial wafer, where the method includes:
putting a substrate on a carrier in reaction equipment, and pretreating the substrate;
stopping introducing the reaction gas into the reaction equipment, adjusting the growth conditions provided by the reaction equipment in multiple stages, introducing the reaction gas into the reaction equipment after the growth conditions provided by the reaction equipment are adjusted, and growing a low-temperature buffer layer on the substrate;
stopping introducing the reaction gas into the reaction equipment, adjusting the growth conditions provided by the reaction equipment in multiple stages, introducing the reaction gas into the reaction equipment after the growth conditions provided by the reaction equipment are adjusted, and growing a high-temperature epitaxial layer on the low-temperature buffer layer;
stopping introducing the reaction gas into the reaction equipment, adjusting the growth conditions provided by the reaction equipment in multiple stages, introducing the reaction gas into the reaction equipment after the growth conditions provided by the reaction equipment are adjusted, and growing an N-type semiconductor layer on the high-temperature epitaxial layer;
growing an active layer on the N-type semiconductor layer, wherein the active layer comprises a plurality of periodic structures which are sequentially stacked, and each periodic structure comprises a quantum well and a quantum barrier which are sequentially stacked; the growth process of each periodic structure comprises the following steps: stopping introducing the reaction gas into the reaction equipment, adjusting the growth conditions provided by the reaction equipment in multiple stages, and introducing the reaction gas into the reaction equipment after the growth conditions provided by the reaction equipment are adjusted to grow the quantum well; stopping introducing the reaction gas into the reaction equipment, adjusting the growth conditions provided by the reaction equipment, and introducing the reaction gas into the reaction equipment after the growth conditions provided by the reaction equipment are adjusted to grow the quantum barrier;
stopping introducing the reaction gas into the reaction equipment, adjusting the growth conditions provided by the reaction equipment in multiple stages, introducing the reaction gas into the reaction equipment after the growth conditions provided by the reaction equipment are adjusted, and growing an electron blocking layer on the active layer;
stopping introducing the reaction gas into the reaction equipment, adjusting the growth conditions provided by the reaction equipment in multiple stages, introducing the reaction gas into the reaction equipment after the growth conditions provided by the reaction equipment are adjusted, and growing a P-type semiconductor layer on the electron blocking layer;
wherein the growth conditions include a temperature within the reaction apparatus, a pressure within the reaction apparatus, a rotation speed of the carrier, and a kind of the reaction gas; the number of growth conditions adjusted for each of the stages is one; the growth conditions of the low-temperature buffer layer, the high-temperature epitaxial layer, the N-type semiconductor layer, the quantum well, the quantum barrier, the electron barrier layer and the P-type semiconductor layer are different.
Optionally, in the process of adjusting the growth conditions provided by the reaction equipment in multiple stages, the adjusting of the temperature in the reaction equipment, the adjusting of the pressure in the reaction equipment, and the adjusting of the rotation speed of the supporting body are performed before the adjusting of the types of the reaction gases.
Further, the temperature in the reaction equipment is adjusted before the pressure in the reaction equipment is adjusted, and the pressure in the reaction equipment is adjusted before the rotating speed of the supporting body is adjusted.
Optionally, in the adjusting of the growth conditions of the low-temperature buffer layer, the number of the plurality of stages is 5 to 10, and the duration of each stage is 15 to 30 min.
Optionally, in the adjusting of the growth conditions of the high-temperature epitaxial layer, the number of the multiple stages is 3 to 8, and the duration of each stage is 10 to 25 min.
Optionally, in the adjusting of the growth conditions of the N-type semiconductor layer, the number of the plurality of stages is 4 to 10, and the duration of each stage is 5 to 15 min.
Optionally, in the adjusting of the growth conditions of the quantum well or the quantum barrier, the number of the plurality of stages is 6 to 15, and the duration of each stage is 12 to 30 min.
Optionally, in the adjusting of the growth conditions of the electron blocking layer, the number of the plurality of stages is 5 to 12, and the duration of each stage is 12 to 25 min.
Optionally, in the adjusting of the growth conditions of the P-type semiconductor layer, the number of the plurality of stages is 3 to 8, and the duration of each stage is 5 to 15 min.
In another aspect, an embodiment of the present disclosure provides a Micro LED epitaxial wafer, where the Micro LED epitaxial wafer includes a substrate, and a low-temperature buffer layer, a high-temperature epitaxial layer, an N-type semiconductor layer, an active layer, an electron blocking layer, and a P-type semiconductor layer sequentially stacked on the substrate, where the active layer includes a plurality of periodic structures sequentially stacked, and each periodic structure includes a quantum well and a quantum barrier sequentially stacked; the low-temperature buffer layer, the high-temperature epitaxial layer, the N-type semiconductor layer, the quantum well, the quantum barrier, the electron barrier layer and the P-type semiconductor layer are formed by introducing reaction gas into reaction equipment after reaction gas is stopped being introduced into the reaction equipment and growth conditions provided by the reaction equipment are adjusted in multiple stages; wherein the growth conditions include a temperature within the reaction apparatus, a pressure within the reaction apparatus, a rotational speed of a carrier within the reaction apparatus, and a type of the reaction gas; the number of growth conditions adjusted for each of the stages is one; the growth conditions of the low-temperature buffer layer, the high-temperature epitaxial layer, the N-type semiconductor layer, the quantum well, the quantum barrier, the electron barrier layer and the P-type semiconductor layer are different.
The technical scheme provided by the embodiment of the disclosure has the following beneficial effects:
through stopping earlier letting in reaction gas in to reaction equipment, carry out the adjustment of multiple stages to the growth condition that reaction equipment provided, let in reaction gas in to reaction equipment again, grow the low temperature buffer layer, can avoid growing out the low temperature buffer layer that does not conform to the requirements in growth condition adjustment process, form the seed crystal that needs as far as, make the volume size and the crystal quality of seed crystal all satisfy needs, provide better growth environment for epitaxial growth. Through stopping earlier letting in reaction gas in to reaction equipment, carry out the adjustment in a plurality of stages to the growth condition that reaction equipment provided, let in reaction gas in to reaction equipment again, grow high temperature epitaxial layer, can form good heat current distribution when high temperature epitaxial layer begins to grow, make the temperature distribution on growth surface more even, be favorable to reducing the small particulate matter in surface. The reaction gas is stopped from being introduced into the reaction equipment, the growth conditions provided by the reaction equipment are adjusted in multiple stages, and then the reaction gas is introduced into the reaction equipment to grow the N-type semiconductor layer, so that the optimal growth environment is achieved when the N-type semiconductor layer starts to grow, sufficient electrons can be provided, and the crystal integrity of the GaN material can be guaranteed. Stopping introducing the reaction gas into the reaction equipment at first, adjusting the growth conditions provided by the reaction equipment in multiple stages, introducing the reaction gas into the reaction equipment, and growing the quantum well, so that the quantum well is in the required growth environment when starting to grow, a clear and excellent interface and fewer defects can be obtained, and the uniformity of the luminescence of the quantum well is better. Stopping introducing the reaction gas into the reaction equipment, adjusting the growth conditions provided by the reaction equipment in multiple stages, introducing the reaction gas into the reaction equipment, and growing the electron barrier layer, so that the pre-reaction of Al can be reduced as much as possible, and the electron barrier layer with better crystal quality can be improved. Stopping introducing the reaction gas into the reaction equipment at first, adjusting the growth conditions provided by the reaction equipment in multiple stages, and introducing the reaction gas into the reaction equipment, so that stable switching can be ensured, and sufficient cavities can be provided.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
Fig. 1 is a flowchart of a method for growing a Micro LED epitaxial wafer according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a Micro LED epitaxial wafer according to an embodiment of the present disclosure.
Detailed Description
To make the objects, technical solutions and advantages of the present disclosure more apparent, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.
The embodiment of the disclosure provides a growth method of a Micro LED epitaxial wafer. Fig. 1 is a flowchart of a method for growing a Micro LED epitaxial wafer according to an embodiment of the present disclosure. Referring to fig. 1, the growing method includes:
step 101: and putting the substrate on a carrier in the reaction equipment, and pretreating the substrate.
In this embodiment, the substrate may be made of sapphire (alumina is a main material), such as sapphire with a crystal orientation of [0001 ].
Optionally, this step 101 may include:
the substrate is annealed at a temperature of 1000 to 1100 deg.C (preferably 1050 deg.C) and a pressure of 200to 500torr (preferably 350torr) in a hydrogen atmosphere for 5 to 6 minutes (preferably 5.5 minutes).
The surface of the substrate is cleaned through the steps, impurities are prevented from being doped into the epitaxial wafer, and the growth quality of the epitaxial wafer is improved.
Step 102: stopping introducing the reaction gas into the reaction equipment, adjusting the growth conditions provided by the reaction equipment in multiple stages, introducing the reaction gas into the reaction equipment after the growth conditions provided by the reaction equipment are adjusted, and growing the low-temperature buffer layer on the substrate.
In the present embodiment, the growth conditions include the temperature in the reaction apparatus, the pressure in the reaction apparatus, the rotation speed of the carrier, and the kind of the reaction gas; the number of growth conditions adjusted per stage is one.
In practical application, the reaction gas can be continuously provided, and when the reaction gas is stopped to be introduced into the reaction equipment, the reaction gas is introduced out of the reaction equipment. At this time, no reaction gas is present in the reaction apparatus, and epitaxial growth is not performed.
Optionally, in the process of adjusting the growth conditions provided by the reaction equipment in multiple stages, the adjustment of the temperature in the reaction equipment, the adjustment of the pressure in the reaction equipment, and the adjustment of the rotation speed of the carrier may be performed before the adjustment of the types of the reaction gases.
Because the temperature in the reaction equipment, the pressure in the reaction equipment and the rotating speed of the bearing body all can influence the substrate in the adjusting process, the temperature in the reaction equipment, the pressure in the reaction equipment and the rotating speed of the bearing body are preferentially adjusted, and the stable transition of the growth environment is facilitated.
Further, the temperature in the reaction apparatus may be adjusted before the pressure in the reaction apparatus is adjusted, and the pressure in the reaction apparatus may be adjusted before the rotational speed of the carrier is adjusted.
According to the influence degree of the growth conditions on epitaxial growth, the temperature which has the greatest influence on epitaxial growth is firstly adjusted, and the rotating speed which has the least influence on epitaxial growth is finally adjusted, so that the epitaxial material can be stably transited to the optimal environment to grow to the greatest extent.
Alternatively, in adjusting the growth conditions of the low-temperature buffer layer, the number of the plurality of stages may be 5 to 10, and the duration of each stage may be 15 to 30 min. If the number of the multiple stages is less than 5 and the duration of each stage is less than 15min, the volume of the seed crystal is affected due to insufficient or unstable conversion of temperature, rotation speed, pressure, gas and the like, and a good growth environment cannot be improved for subsequent epitaxial growth. If the number of the plurality of stages is greater than 10 and the duration of each stage is greater than 30min, although stable transition of the growth environment can be ensured, the growth cost is increased, and the efficiency is affected.
Further, in the adjustment of the growth conditions of the low-temperature buffer layer, the number of the multiple stages can be 6-10, the duration of each stage can be 15-25 min, the stability of the seed crystal can be ensured, and an excellent growth environment is provided for the subsequent growth.
In this embodiment, undoped gan may be used as the buffer layer. Further, the thickness of the buffer layer may be 15nm to 30nm, preferably 25 nm.
Optionally, this step 102 may include:
the buffer layer is grown on the substrate at a temperature of 530 ℃ to 560 ℃ (preferably 545 ℃) and a pressure of 200torr to 500torr (preferably 350 torr).
Illustratively, the temperature of the reaction device may be reduced from 1000 ℃ to 900 ℃ in a first phase (duration of 20min), from 900 ℃ to 800 ℃ in a second phase (duration of 20min), from 800 ℃ to 700 ℃ in a third phase (duration of 20min), from 700 ℃ to 600 ℃ in a fourth phase (duration of 20min), from 600 ℃ to 550 ℃ in a fifth phase (duration of 15min), the rotational speed of the carrier body may be adjusted to the desired rotational speed in a sixth phase (duration of 20min), and the ammonia and gallium sources in the reaction gas may be adjusted to the desired flow rates in a seventh phase (duration of 25 min).
Step 103: stopping introducing the reaction gas into the reaction equipment, adjusting the growth conditions provided by the reaction equipment in multiple stages, introducing the reaction gas into the reaction equipment after adjusting the growth conditions provided by the reaction equipment, and growing the high-temperature epitaxial layer on the low-temperature buffer layer.
In the present embodiment, the growth conditions include the temperature in the reaction apparatus, the pressure in the reaction apparatus, the rotation speed of the carrier, and the kind of the reaction gas; the number of growth conditions adjusted per stage is one.
Optionally, in the process of adjusting the growth conditions provided by the reaction equipment in multiple stages, the adjustment of the temperature in the reaction equipment, the adjustment of the pressure in the reaction equipment, and the adjustment of the rotation speed of the carrier may be performed before the adjustment of the types of the reaction gases.
Further, the temperature in the reaction apparatus may be adjusted before the pressure in the reaction apparatus is adjusted, and the pressure in the reaction apparatus may be adjusted before the rotational speed of the carrier is adjusted.
Alternatively, in adjusting the growth conditions of the high temperature epitaxial layer, the number of the plurality of stages may be 3 to 8, and the duration of each stage may be 10 to 25 min. If the number of the multiple stages is less than 3 and the duration of each stage is less than 10min, the temperature required for growth cannot be stabilized to a higher temperature due to the increase in temperature, which affects the leveling effect of the leveling layer, and thus the overall crystal quality. If the number of the multiple stages is more than 8 and the duration of each stage is more than 25min, the seeds grown in the early stage are partially baked due to the overhigh temperature.
Further, in adjusting the growth conditions of the high temperature epitaxial layer, the number of the plurality of stages may be 4 to 6, and the duration of each stage may be 15 to 20 min. Not only can ensure the growth environment of stable switching to high temperature, but also can not influence the GaN crystal seeds grown in the early stage because of too high temperature and too long time.
In this embodiment, the thickness of the undoped gallium nitride layer may be 2 μm to 3.5 μm, preferably 2.75 μm.
Optionally, the step 103 may include:
an undoped gallium nitride layer is grown on the buffer layer at a temperature of 1000 ℃ to 1100 ℃ (preferably 1050 ℃) and a pressure of 200torr to 600torr (preferably 400 torr).
Illustratively, the temperature of the reaction apparatus may be increased from 550 ℃ to 650 ℃ in a first stage (duration of 20min), from 650 ℃ to 750 ℃ in a second stage (duration of 20min), from 750 ℃ to 850 ℃ in a third stage (duration of 20min), from 850 ℃ to 950 ℃ in a fourth stage (duration of 20min), and from 950 ℃ to 1050 ℃ in a fifth stage (duration of 20 min).
Step 104: and stopping introducing the reaction gas into the reaction equipment, adjusting the growth conditions provided by the reaction equipment in multiple stages, introducing the reaction gas into the reaction equipment after the growth conditions provided by the reaction equipment are adjusted, and growing the N-type semiconductor layer on the high-temperature epitaxial layer.
In the present embodiment, the growth conditions include the temperature in the reaction apparatus, the pressure in the reaction apparatus, the rotation speed of the carrier, and the kind of the reaction gas; the number of growth conditions adjusted per stage is one.
Optionally, in the process of adjusting the growth conditions provided by the reaction equipment in multiple stages, the adjustment of the temperature in the reaction equipment, the adjustment of the pressure in the reaction equipment, and the adjustment of the rotation speed of the carrier may be performed before the adjustment of the types of the reaction gases.
Further, the temperature in the reaction apparatus may be adjusted before the pressure in the reaction apparatus is adjusted, and the pressure in the reaction apparatus may be adjusted before the rotational speed of the carrier is adjusted.
Alternatively, in the adjustment of the growth conditions of the N-type semiconductor layer, the number of the plurality of stages may be 4 to 10, and the duration of each stage may be 5 to 15 min. If the number of multiple stages is less than 4 and the duration of each stage is less than 5min, the stable cut-in of Si and the uniformity of Si doping may be affected because the number of multiple stages is too small and the duration of each stage is too short. If the number of the plurality of stages is greater than 10 and the duration of each stage is greater than 15min, unnecessary resource waste is caused by too long adjustment time, and thus the production cost is increased.
Further, in the adjustment of the growth conditions of the N-type semiconductor layer, the number of the plurality of stages may be 4 to 8, the duration of each stage may be 6 to 12min, and the uniformity of the Si doping and the appropriate production cost may be ensured.
In this embodiment, N-type doped (e.g., silicon) gan may be used for the N-type semiconductor layer. The thickness of the N-type semiconductor layer may be 2 to 3 μm, preferably 2.5 μm; the doping concentration of the N-type dopant in the N-type semiconductor layer may be 1018cm-3～1019cm-3Preferably 5 x 1018cm-3。
Optionally, this step 104 may include:
an N-type semiconductor layer is grown on the buffer layer under a temperature of 1000 to 1100 deg.C (preferably 1050 deg.C) and a pressure of 150to 300torr (preferably 250 torr).
Illustratively, the pressure of the reaction apparatus may be reduced from 600torr to 450torr in a first phase (duration of 15min), from 450torr to 300torr in a second phase (duration of 15min), the speed of the carrier may be adjusted to the desired speed in a third phase (duration of 15min), and the N-type dopant in the reaction gas may be adjusted to the desired flow rate in a fourth phase (duration of 15 min).
Step 105: an active layer is grown on the N-type semiconductor layer.
In the present embodiment, the active layer includes a plurality of periodic structures sequentially stacked, each periodic structure including a quantum well and a quantum barrier sequentially stacked. The growth process of each periodic structure comprises the following steps: stopping introducing the reaction gas into the reaction equipment, adjusting the growth conditions provided by the reaction equipment in multiple stages, and introducing the reaction gas into the reaction equipment after the growth conditions provided by the reaction equipment are adjusted to grow the quantum well; stopping introducing the reaction gas into the reaction equipment, adjusting the growth conditions provided by the reaction equipment in multiple stages, and introducing the reaction gas into the reaction equipment after the growth conditions provided by the reaction equipment are adjusted to grow the quantum barrier.
The growth conditions include the temperature in the reaction equipment, the pressure in the reaction equipment, the rotating speed of the supporting body and the type of the reaction gas; the number of growth conditions adjusted per stage is one.
Optionally, in the process of adjusting the growth conditions provided by the reaction equipment in multiple stages, the adjustment of the temperature in the reaction equipment, the adjustment of the pressure in the reaction equipment, and the adjustment of the rotation speed of the carrier may be performed before the adjustment of the types of the reaction gases.
Further, the temperature in the reaction apparatus may be adjusted before the pressure in the reaction apparatus is adjusted, and the pressure in the reaction apparatus may be adjusted before the rotational speed of the carrier is adjusted.
Optionally, in the adjusting of the growth conditions of the quantum well, the number of the multiple stages may be 6 to 15, and the duration of each stage may be 12 to 30 min; in the adjustment of the growth conditions of the quantum barrier, the number of the plurality of stages may be 6 to 15, and the duration of each stage may be 12 to 30 min. The growth of the layer needs frequent switching of high and low temperatures and cyclic switching of different MO sources, gases and the like, if the number of a plurality of stages is less than 6 and the duration of each stage is less than 12min, the interfaces of a well layer and a barrier layer, even fuzzy interfaces, cannot be obtained due to unstable switching of the temperature, the gases and the like, so that more defects and poor crystal quality are generated, and the uniformity of light emission is finally influenced. If the number of the multiple stages is greater than 15 and the duration of each stage is greater than 30min, the stability of In may be affected due to too long switching buffer time at high and low temperatures, which may further cause a large amount of In diffusion to an unnecessary growth layer, thereby causing a large reduction In crystal quality.
Further, in the adjustment of the growth conditions of the quantum well, the number of the plurality of stages may be 8 to 12, and the duration of each stage may be 15 to 25 min; in the adjustment of the growth conditions of the quantum barrier, the number of the plurality of stages may be 8 to 12, and the duration of each stage may be 15 to 25 min. Therefore, stable switching of temperature, airflow and the like and stability of In doping can be guaranteed, interface definition of the well layer and the barrier layer is improved, crystal quality is further guaranteed, and uniformity of obtained light emission is finally guaranteed.
In this embodiment, the quantum well may be undoped indium gallium nitride, and the quantum barrier may be undoped gallium nitride.
Optionally, this step 105 may include:
growing an active layer on the N-type semiconductor layer; wherein, the growth temperature of the quantum well is 760 ℃ to 780 ℃ (preferably 770 ℃), and the pressure is 200 torr; the growth temperature of the quantum barrier is 860 ℃ to 890 ℃ (preferably 875 ℃) and the pressure is 200 torr.
Illustratively, the temperature of the reaction device may be reduced from 860 ℃ to 840 ℃ in a first phase (duration 15min), from 840 ℃ to 820 ℃ in a second phase (duration 15min), from 820 ℃ to 800 ℃ in a third phase (duration 15min), from 800 ℃ to 780 ℃ in a fourth phase (duration 15min), the rotational speed of the carrier may be adjusted to the desired rotational speed in a fifth phase (duration 15min), and the indium source in the reaction gas may be adjusted to the desired flow rate in a fifth phase (duration 15min) prior to growing the quantum wells.
Before the quantum barrier is grown, the temperature of the reaction device may be increased from 780 ℃ to 800 ℃ in a first stage (duration 15min), from 800 ℃ to 820 ℃ in a second stage (duration 15min), from 820 ℃ to 840 ℃ in a third stage (duration 15min), from 840 ℃ to 860 ℃ in a fourth stage (duration 15min), the rotational speed of the carrier may be adjusted to the desired rotational speed in a fifth stage (duration 15min), and the ammonia and gallium sources in the reaction gas may be adjusted to the desired flow rate in a fifth stage (duration 15 min).
Step 106: stopping introducing the reaction gas into the reaction equipment, adjusting the growth conditions provided by the reaction equipment in multiple stages, introducing the reaction gas into the reaction equipment after the growth conditions provided by the reaction equipment are adjusted, and growing the electron blocking layer on the active layer.
In the present embodiment, the growth conditions include the temperature in the reaction apparatus, the pressure in the reaction apparatus, the rotation speed of the carrier, and the kind of the reaction gas; the number of growth conditions adjusted per stage is one.
Optionally, in the process of adjusting the growth conditions provided by the reaction equipment in multiple stages, the adjustment of the temperature in the reaction equipment, the adjustment of the pressure in the reaction equipment, and the adjustment of the rotation speed of the carrier may be performed before the adjustment of the types of the reaction gases.
Further, the temperature in the reaction apparatus may be adjusted before the pressure in the reaction apparatus is adjusted, and the pressure in the reaction apparatus may be adjusted before the rotational speed of the carrier is adjusted.
Alternatively, in the adjustment of the growth conditions of the electron blocking layer, the number of the plurality of stages may be 5 to 12, and the duration of each stage may be 12 to 25 min. The appropriate number and duration of stages are critical since the temperature increase transitions, gas switching, pressure and rotational speed adjustments, Al and Mg source inputs, etc. are performed during this period. If the number of the multiple stages is less than 5 and the duration of each stage is less than 12min, the growth temperature is not high enough and the switching of gas, pressure, rotation speed and the like is not smooth because of the small number and duration of the stages, thereby affecting the crystal quality of the layer growth and the uniformity of Al composition and Al doping required for achieving proper growth. If the number of the multiple stages is greater than 12 and the duration of each stage is greater than 25min, the adjustment time is too long, which increases the pre-reaction possibility of Al, and thus the blocking effect of the layer on electrons is greatly reduced.
Further, in the adjustment of the growth conditions of the electron blocking layer, the number of the multiple stages can be 6-10, the duration of each stage can be 12-20 min, the crystal quality of the layer and the uniformity of the proper Al composition and doping can be ensured, and the pre-reaction possibility of Al is not increased.
In the present embodiment, the electron blocking layer can be made of P-type doped aluminum gallium nitride (AlGaN), such as AlyGa1-yN, 0.15 < y < 0.25. Further, the thickness of the electron blocking layer may be 30nm to 50nm, preferably 40 nm.
Optionally, this step 106 may include:
the electron blocking layer is grown on the active layer at a controlled temperature of 930 deg.C to 970 deg.C (preferably 950 deg.C) and a pressure of 100 torr.
Illustratively, the temperature of the reaction apparatus may be increased from 860 ℃ to 900 ℃ in a first phase (duration of 20min), from 900 ℃ to 910 ℃ in a second phase (duration of 20min), the pressure of the reaction apparatus may be reduced from 200torr to 100 ℃ in a third phase (duration of 20min), the rotation speed of the carrier may be adjusted to a desired rotation speed in a fourth phase (duration of 20min), and the Al source and the P-type dopant in the reaction gas may be adjusted to a desired flow rate in a fifth phase (duration of 20 min).
Step 107: stopping introducing the reaction gas into the reaction equipment, carrying out multi-stage adjustment on the growth condition provided by the reaction equipment, introducing the reaction gas into the reaction equipment after the growth condition provided by the reaction equipment is adjusted, and growing the P-type semiconductor layer on the electron blocking layer.
In the present embodiment, the growth conditions include the temperature in the reaction apparatus, the pressure in the reaction apparatus, the rotation speed of the carrier, and the kind of the reaction gas; the number of growth conditions adjusted per stage is one.
Optionally, in the process of adjusting the growth conditions provided by the reaction equipment in multiple stages, the adjustment of the temperature in the reaction equipment, the adjustment of the pressure in the reaction equipment, and the adjustment of the rotation speed of the carrier may be performed before the adjustment of the types of the reaction gases.
Further, the temperature in the reaction apparatus may be adjusted before the pressure in the reaction apparatus is adjusted, and the pressure in the reaction apparatus may be adjusted before the rotational speed of the carrier is adjusted.
Alternatively, in the adjustment of the growth conditions of the P-type semiconductor layer, the number of the plurality of stages may be 3 to 8, and the duration of each stage may be 5 to 15 min. This layer mainly serves to provide holes, needs to be doped with Mg, and also needs to be gas switched and Ga sources increased. If the number of the multiple stages is less than 3 and the duration of each stage is less than 5min, the doping effect and doping uniformity of Mg are affected because the number and duration of the stages are less. Since the switching and adjustment amplitude of the electron blocking layer is smaller than that of the electron blocking layer, if the number of the multiple stages is greater than 8 and the duration of each stage is greater than 15min, unnecessary production cost is increased, and the production efficiency is also affected.
Further, in adjusting the growth conditions of the P-type semiconductor layer, the number of the plurality of stages may be 4 to 8, and the duration of each stage may be 8 to 15 min. Can ensure the doping effect and uniformity of Mg, and can not increase more production cost.
In this embodiment, P-type doped (e.g., mg) gan can be used as the P-type semiconductor layer. Further, the thickness of the P-type semiconductor layer may be 50nm to 80nm, preferably 65 nm; the doping concentration of the P-type dopant in the P-type semiconductor layer may be 1018/cm3～1020/cm3Preferably 1019/cm3。
Optionally, this step 107 may include:
the P-type semiconductor layer is grown on the active layer under a controlled temperature of 940 to 980 c (preferably 960 c) and a pressure of 200to 600torr (preferably 400 torr).
Illustratively, the temperature of the reaction apparatus may be increased from 930 ℃ to 960 ℃ in a first stage (duration of 15min), the pressure of the reaction apparatus may be increased from 100torr to 200torr in a second stage (duration of 15min), and the P-type dopant in the reaction gas may be adjusted to a desired flow rate in a third stage (duration of 15 min).
According to the embodiment of the disclosure, the reaction gas is stopped from being introduced into the reaction equipment, the growth conditions provided by the reaction equipment are adjusted in multiple stages, and then the reaction gas is introduced into the reaction equipment to grow the low-temperature buffer layer, so that the growth of the low-temperature buffer layer which does not meet the requirements in the growth condition adjustment process can be avoided, the required seed crystal is formed as far as possible, the size and the crystal quality of the seed crystal meet the requirements, and a better growth environment is provided for epitaxial growth. Through stopping earlier letting in reaction gas in to reaction equipment, carry out the adjustment in a plurality of stages to the growth condition that reaction equipment provided, let in reaction gas in to reaction equipment again, grow high temperature epitaxial layer, can form good heat current distribution when high temperature epitaxial layer begins to grow, make the temperature distribution on growth surface more even, be favorable to reducing the small particulate matter in surface. The reaction gas is stopped from being introduced into the reaction equipment, the growth conditions provided by the reaction equipment are adjusted in multiple stages, and then the reaction gas is introduced into the reaction equipment to grow the N-type semiconductor layer, so that the optimal growth environment is achieved when the N-type semiconductor layer starts to grow, sufficient electrons can be provided, and the crystal integrity of the GaN material can be guaranteed. Stopping introducing the reaction gas into the reaction equipment at first, adjusting the growth conditions provided by the reaction equipment in multiple stages, introducing the reaction gas into the reaction equipment, and growing the quantum well, so that the quantum well is in the required growth environment when starting to grow, a clear and excellent interface and fewer defects can be obtained, and the uniformity of the luminescence of the quantum well is better. Stopping introducing the reaction gas into the reaction equipment, adjusting the growth conditions provided by the reaction equipment in multiple stages, introducing the reaction gas into the reaction equipment, and growing the electron barrier layer, so that the pre-reaction of Al can be reduced as much as possible, and the electron barrier layer with better crystal quality can be improved. Stopping introducing the reaction gas into the reaction equipment at first, adjusting the growth conditions provided by the reaction equipment in multiple stages, and introducing the reaction gas into the reaction equipment, so that stable switching can be ensured, and sufficient cavities can be provided.
The embodiment of the disclosure provides a Micro LED epitaxial wafer which can be formed by the growth method of the Micro LED epitaxial wafer shown in FIG. 1. Fig. 2 is a schematic structural diagram of a Micro LED epitaxial wafer according to an embodiment of the present invention. Referring to fig. 2, the Micro LED epitaxial wafer includes a substrate 10, and a low temperature buffer layer 20, a high temperature epitaxial layer 30, an N-type semiconductor layer 40, an active layer 50, an electron blocking layer 60, and a P-type semiconductor layer 70 sequentially stacked on the substrate, wherein the active layer includes a plurality of periodic structures sequentially stacked, and each periodic structure includes a quantum well and a quantum barrier sequentially stacked.
In this embodiment, the low-temperature buffer layer 20, the high-temperature epitaxial layer 30, the N-type semiconductor layer 40, the quantum well, the quantum barrier, the electron blocking layer 60, and the P-type semiconductor layer 70 are formed by stopping the introduction of the reaction gas into the reaction apparatus, adjusting the growth conditions provided by the reaction apparatus in multiple stages, and then introducing the reaction gas into the reaction apparatus for growth.
Wherein the growth conditions comprise the temperature in the reaction equipment, the pressure in the reaction equipment, the rotating speed of a bearing body in the reaction equipment and the type of reaction gas; the number of growth conditions adjusted at each stage is one; the growth conditions of the low-temperature buffer layer, the high-temperature epitaxial layer, the N-type semiconductor layer, the quantum well, the quantum barrier, the electron blocking layer and the P-type semiconductor layer are different.
The above description is only exemplary of the present disclosure and is not intended to limit the present disclosure, so that any modification, equivalent replacement, or improvement made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (10)
1. A growth method of a Micro LED epitaxial wafer is characterized by comprising the following steps:
putting a substrate on a carrier in reaction equipment, and pretreating the substrate;
stopping introducing the pretreated reaction gas into the reaction equipment, adjusting the growth conditions provided by the reaction equipment in multiple stages, introducing the reaction gas for growing the low-temperature buffer layer into the reaction equipment after adjusting the growth conditions provided by the reaction equipment, and growing the low-temperature buffer layer on the substrate;
stopping introducing the reaction gas adopted in the previous step into the reaction equipment, adjusting the growth conditions provided by the reaction equipment in multiple stages, introducing the reaction gas for growing the undoped gallium nitride layer into the reaction equipment after adjusting the growth conditions provided by the reaction equipment, and growing the undoped gallium nitride layer on the low-temperature buffer layer;
stopping introducing the reaction gas adopted in the previous step into the reaction equipment, adjusting the growth conditions provided by the reaction equipment in multiple stages, introducing the reaction gas for growing the N-type semiconductor layer into the reaction equipment after adjusting the growth conditions provided by the reaction equipment, and growing the N-type semiconductor layer on the undoped gallium nitride layer;
growing an active layer on the N-type semiconductor layer, wherein the active layer comprises a plurality of periodic structures which are sequentially stacked, and each periodic structure comprises a quantum well and a quantum barrier which are sequentially stacked; the growth process of each periodic structure comprises the following steps: stopping introducing the reaction gas adopted in the previous step into the reaction equipment, adjusting the growth conditions provided by the reaction equipment in multiple stages, and introducing the reaction gas for growing the quantum well into the reaction equipment after adjusting the growth conditions provided by the reaction equipment to grow the quantum well; stopping introducing the reaction gas adopted in the previous step into the reaction equipment, adjusting the growth condition provided by the reaction equipment, and introducing the reaction gas for growing the quantum barrier into the reaction equipment after the growth condition provided by the reaction equipment is adjusted, so as to grow the quantum barrier;
stopping introducing the reaction gas adopted in the previous step into the reaction equipment, adjusting the growth conditions provided by the reaction equipment in multiple stages, introducing the reaction gas for growing the electron blocking layer into the reaction equipment after the growth conditions provided by the reaction equipment are adjusted, and growing the electron blocking layer on the active layer;
stopping introducing the reaction gas adopted in the previous step into the reaction equipment, adjusting the growth conditions provided by the reaction equipment in multiple stages, introducing the reaction gas for growing the P-type semiconductor layer into the reaction equipment after adjusting the growth conditions provided by the reaction equipment, and growing the P-type semiconductor layer on the electron blocking layer;
wherein the growth conditions include a temperature within the reaction apparatus, a pressure within the reaction apparatus, a rotation speed of the carrier, and a kind of reaction gas; the number of growth conditions adjusted for each of the stages is one; the growth conditions of the low-temperature buffer layer, the undoped gallium nitride layer, the N-type semiconductor layer, the quantum well, the quantum barrier, the electron blocking layer and the P-type semiconductor layer are different.
2. The growth method according to claim 1, wherein the temperature in the reaction apparatus, the pressure in the reaction apparatus, and the rotation speed of the carrier are adjusted before the types of the reaction gases are adjusted during the adjustment of the growth conditions provided by the reaction apparatus in a plurality of stages.
3. The growth method according to claim 2, wherein the adjusting of the temperature in the reaction device is performed before the adjusting of the pressure in the reaction device, and wherein the adjusting of the pressure in the reaction device is performed before the adjusting of the rotation speed of the carrier.
4. The growth method according to any one of claims 1 to 3, wherein the number of the plurality of stages is 5 to 10 and the duration of each of the stages is 15 to 30min in the adjustment of the growth conditions of the low-temperature buffer layer.
5. The growth method according to any one of claims 1 to 3, wherein the number of the plurality of stages is 3 to 8 and the duration of each of the stages is 10 to 25min in the adjustment of the growth conditions of the undoped gallium nitride layer.
6. The growth method according to any one of claims 1 to 3, wherein the number of the plurality of stages is 4 to 10 and the duration of each of the stages is 5 to 15min in the adjustment of the growth conditions of the N-type semiconductor layer.
7. The growth method according to any one of claims 1 to 3, wherein the number of the plurality of stages is 6 to 15 and the duration of each of the stages is 12 to 30min in the adjustment of the growth conditions of the quantum well or the quantum barrier.
8. The growth method according to any one of claims 1 to 3, wherein the number of the plurality of stages is 5 to 12 and the duration of each of the stages is 12 to 25min in the adjustment of the growth conditions of the electron blocking layer.
9. The growth method according to any one of claims 1 to 3, wherein the number of the plurality of stages is 3 to 8 and the duration of each stage is 5 to 15min in the adjustment of the growth conditions of the P type semiconductor layer.
10. A Micro LED epitaxial wafer comprises a substrate, and a low-temperature buffer layer, an undoped gallium nitride layer, an N-type semiconductor layer, an active layer, an electron blocking layer and a P-type semiconductor layer which are sequentially stacked on the substrate, wherein the active layer comprises a plurality of periodic structures which are sequentially stacked, and each periodic structure comprises a quantum well and a quantum barrier which are sequentially stacked; the method is characterized in that the low-temperature buffer layer, the undoped gallium nitride layer, the N-type semiconductor layer, the quantum well, the quantum barrier, the electron barrier layer and the P-type semiconductor layer are formed by stopping introducing the reaction gas adopted in the previous step into the reaction equipment, adjusting the growth conditions provided by the reaction equipment in multiple stages and then introducing the required reaction gas into the reaction equipment for growth; wherein the growth conditions include a temperature within the reaction apparatus, a pressure within the reaction apparatus, a rotational speed of a support within the reaction apparatus, and a kind of reaction gas; the number of growth conditions adjusted for each of the stages is one; the growth conditions of the low-temperature buffer layer, the undoped gallium nitride layer, the N-type semiconductor layer, the quantum well, the quantum barrier, the electron blocking layer and the P-type semiconductor layer are different.
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