CN111048572A - OLED light-emitting panel - Google Patents
OLED light-emitting panel Download PDFInfo
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- CN111048572A CN111048572A CN201911372667.3A CN201911372667A CN111048572A CN 111048572 A CN111048572 A CN 111048572A CN 201911372667 A CN201911372667 A CN 201911372667A CN 111048572 A CN111048572 A CN 111048572A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5283—Cross-sectional geometry
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
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Abstract
The invention discloses an OLED light-emitting panel, which comprises a substrate and a plurality of light-emitting areas arranged on the substrate in an array distribution manner, wherein lead structures electrically connected with electrode leads corresponding to the light-emitting areas are arranged in array gaps formed between the light-emitting areas or on the back sides of the light-emitting areas; the laminated lead structure arranged on the substrate is in a three-dimensional shape, so that array gaps formed among the luminous areas can be greatly reduced, even seamless gaps are realized, the aperture opening ratio is improved, meanwhile, the resistance of the lead layer is controlled by setting the length-width ratio according to the length of the lead layer, the brightness uniformity of the luminous areas at different positions is realized, and the contradiction between the aperture opening ratio of the panel and the resistance of the lead is solved.
Description
Technical Field
The invention relates to the technical field of OLED (organic light emitting diode), in particular to an OLED light-emitting panel.
Background
The OLED light-emitting panel with the multiple light emitting areas has great application potential in vehicle-mounted application, the OLED light-emitting panel can be lightened by the multiple light emitting areas and has pattern display and the like which become the current development trend except the modeling advantages of lightness, thinness, flexibility, surface light source and the like of the OLED panel, if the light emitting areas are too many, the design of the lead of the light emitting areas brings challenges, the lead design is required to save space as much as possible, the width and the width of the control line are thin, and the resistance is guaranteed to be as small as possible. In the prior art, the PCB multi-layer leads adopted by the multi-layer PCB are electrically connected through plated holes and through holes, the process is complex, and the process difficulty is higher if the PCB multi-layer leads are used in an OLED light-emitting panel with multiple luminous areas and realized through a punching process. Therefore, the distribution of lead design in a multiple light emitting area OLED light emitting panel becomes a key technical problem which needs to be solved at present.
Disclosure of Invention
In order to solve the technical problems of lead wire occupation space, large lead wire resistance and the like in the OLED light-emitting panel with multiple light emitting areas, the invention provides the OLED light-emitting panel, and through spatial lead wire arrangement, the gap between the light emitting areas can be ensured to be as small as possible, and the lead wire resistance can be ensured to be as small as possible, so that the contradiction between the panel opening rate and the lead wire resistance is solved.
The invention adopts the following technical scheme:
the OLED light-emitting panel comprises a substrate and a plurality of light-emitting areas arranged on the substrate in an array manner, wherein each light-emitting area is provided with a lead structure electrically connected with the light-emitting area correspondingly, each lead structure comprises a laminated lead layer and an insulating layer, the insulating layers are arranged between every two adjacent lead layers, and the lead layers are electrically connected with the corresponding light-emitting areas one by one after being led out.
The lead structures are arranged on the back side of each light emitting area, and the lead structures are distributed along the transverse direction or the longitudinal direction of the light emitting areas distributed in an array.
Or preferably, the lead structures are distributed in array gaps formed among the light emitting areas in array distribution, the electrode leads corresponding to the light emitting areas are electrically connected, and the lead layers are electrically connected with the corresponding light emitting areas one by one after being led out from the side surfaces.
In the direction vertical to one side of the substrate, each row of the luminous areas are distributed in a ladder shape from one end of the substrate to the other end of the substrate, and the adjacent two rows of the luminous areas are isolated by a transparent insulating layer.
Preferably, in a direction perpendicular to the substrate, one or a combination of several of array gaps, seamless butt joints and end lap joints are formed between two adjacent rows of the light emitting areas.
Furthermore, an anti-breaking lapping surface for leading out the electrodes of the lead layer is formed at the edge of the lower insulating layer corresponding to the position of the lead line on the side surface of the lead layer.
The angle corresponding to the anti-breaking lapping surface formed at the edge of the insulating layer is 1-85 degrees.
Or preferably, the cross section of the insulating layer is a trapezoid and/or a circular arc surface.
The lead layer length is greater proximate the substrate than distal the substrate.
The line width of the longer lead layer is greater than the line width of the shorter lead layer.
The array gap formed between the light emitting areas is provided with a plurality of groups of lead structures, and the lead layers in each lead structure are respectively and electrically connected with the electrode leads of each light emitting area in a one-to-one correspondence manner.
The lead layer is made of metal oxide or metal and alloy materials thereof, the sheet resistance of the lead layer is 0.01 omega/□ -30 omega/□, and the length-width ratio of the lead is more than 300 and more than a/b and more than 1.
The insulating layer is one or more of silicon nitride, silicon oxide, silicon oxynitride and siloxane.
The light emitting region is shaped as one of a rectangle, a triangle, a parallelogram, and a polygon.
The technical scheme of the invention has the following advantages:
A. the invention can realize three-dimensional of each row of luminous areas, establish a plurality of rows of luminous areas, realize the insulation isolation of the adjacent luminous areas by laying the insulating layer on the lead layer of each row of luminous areas, realize the seamless combination of each row of luminous areas, effectively utilize the spatial distribution of the array luminous areas and achieve the better display effect of the multiple luminous areas.
B. The stacked lead structure is arranged in the array gap formed by the light emitting areas arranged on the substrate, the lead layers in the lead structure and the insulating layer are arranged at intervals, the lead layers are electrically connected with the electrode leads of the corresponding light emitting areas from the side surface, the stacked lead structure is arranged in a three-dimensional manner, the array gap between the light emitting areas is greatly reduced, and the resistance of the lead is controlled; the insulating layer is arranged between the lead layers for insulating isolation, and the lead layers are connected with the edges of the insulating layer through the slope after being led out from the side faces, so that the contradiction between the opening ratio of the panel and the lead resistance is solved.
C. In order to electrically connect the lead of the lead layer with the electrode of the light emitting area, the edge of the insulating layer corresponding to the lower part of the lead position of the lead layer adopts the design of the anti-open lap joint surface, thereby avoiding the condition that the electrode lead on the insulating layer is electrically opened due to the over steep angle of the edge of the insulating layer and prolonging the service life of the panel.
D. The invention can also set the lead structure according to the array gap size of the set light-emitting area, if the array gap is large, a plurality of parallel lead structures arranged in parallel can be set at the array gap position, the array gap is fully utilized, and the thickness of the lead structure is reduced.
E. The light emitting areas and the lead structures corresponding to the light emitting areas are in a three-dimensional design, the distribution of the light emitting areas is further optimized, gaps between the two rows of the light emitting areas are further reduced or even eliminated, the utilization rate of space is improved, and meanwhile, the line width size of the lead layers is adjusted according to the length of the lead layers, so that the light emitting areas in all rows can uniformly emit light.
Drawings
In order to more clearly illustrate the embodiments of the present invention, the drawings which are needed to be used in the embodiments will be briefly described below, and it is apparent that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained from the drawings without inventive labor to those skilled in the art.
FIG. 1 is a schematic structural diagram of a first embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a second embodiment of the present invention;
FIG. 3 is a schematic view of the cross-sectional structure A-A shown in FIG. 2;
FIG. 4 is a schematic structural diagram of a third embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view taken along line B-B in FIG. 4;
FIG. 6 is a schematic structural diagram of a fourth embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a fifth embodiment of the present invention;
FIG. 8 is a schematic structural diagram of a sixth embodiment of the present invention;
FIG. 9 is a cross-sectional view of a multi-layer lead structure disposed on a substrate according to the present invention;
FIG. 10 is a schematic view of a first overlapping cross-section of a lead configuration;
fig. 11 is a second overlapping cross-sectional view of a lead configuration.
The labels in the figure are as follows:
1-a substrate; 2-light emitting areas, 21-a first row of light emitting areas, 22-a second row of light emitting areas; 3-array gap; 4-lead structure, 41-lead layer, 42-insulating layer; 5-anti-breaking lapping surface; 6-transparent insulating layer; a-an upper lead layer; b-a middle lead layer; c-bottom lead layer.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1
As shown in fig. 1, the OLED light-emitting panel provided by the present invention includes a substrate and a plurality of light-emitting areas 2 arranged on the substrate in an array, each light-emitting area 2 is respectively provided with a lead structure 4 electrically connected to the corresponding light-emitting area, the specific lead structure 4 includes stacked lead layers 41 and an insulating layer 42, the insulating layer 42 is arranged between two adjacent lead layers 41, and each lead layer 41 is electrically connected to the corresponding light-emitting area 2 after being led out. Here, the lead structures 4 are disposed on the back side of the respective light emitting regions 2, and the lead structures 4 are distributed along the lateral or longitudinal direction of the light emitting regions 2 distributed in an array.
In fig. 1, 2 rows of light emitting areas are arranged, 5 light emitting areas are arranged in each row of light emitting areas, and all the light emitting areas can be connected seamlessly.
In the present invention, the light emitting regions are three-dimensionally formed, as shown in fig. 2, after the first row of light emitting regions 21 is produced, a transparent first insulating layer is added on the back surface of the first row of light emitting regions, and then the second row of light emitting regions 22 is produced, so that the metal wiring layer of the second row of light emitting regions can be hidden under the first row of light emitting regions, and seamless connection can be realized between the second row of light emitting regions and the first row of light emitting regions. If more rows of light emitting areas are arranged, such as a third row of light emitting areas, a second insulating layer is added on the first row of light emitting areas and the second row of light emitting areas, and the metal lead layers of the third row of light emitting areas can be hidden under the first row of light emitting areas and the second row of light emitting areas.
The lead structures in fig. 1 are arranged along the longitudinal direction of the light emitting area of the array, i.e. distributed in the number of columns. It is of course also possible to arrange it in the transverse direction, i.e. the lead structures are arranged in two rows along the number of rows. The lead layers connected to the light emitting regions may be arranged in a staggered manner or in a stacked manner, and will not be described herein.
Example 2
The OLED light-emitting panel provided in this embodiment includes a substrate 1 and a plurality of light-emitting areas 2 arranged on the substrate 1 in an array distribution, a lead structure 4 electrically connected to electrode leads corresponding to the light-emitting areas 2 is disposed in an array gap 3 formed between the light-emitting areas 2, the lead structure 4 includes stacked lead layers 41 and insulating layers 42, the insulating layers 42 are disposed between two adjacent lead layers 41, and the lead layers 41 are electrically connected to the light-emitting areas 2 one by one after being led out from the side surface.
For the case of small array gaps, the structure shown in fig. 2 and fig. 3 may be provided to realize three-dimensional lead structures, all the lead layers are stacked together, for example, 9 light emitting regions are provided in fig. 2 in total to form an array distribution of 3X3, the lead structures 4 are provided in three array gaps, each lead structure is stacked with three lead layers and three insulating layers, each lead layer 41 includes an upper lead layer a, a middle lead layer b, and a bottom lead layer c, each lead layer corresponds to one light emitting region and is electrically connected, in this embodiment, 9 light emitting regions are provided, and 9 lead layers and 9 light emitting regions are provided in total to form one-to-one corresponding electrical connections.
The lead structure is made into a three-dimensional laminated shape, and the number of the laminated lead layers is set according to the number of the luminous areas arranged at the two sides of the array gap, so that the array gap between the luminous areas can be sufficiently narrow; meanwhile, in order to reduce the resistance of the longer lead layer, the line width of the longer lead layer is wider, and the line width of the shorter lead layer is narrower.
Example 3
As shown in fig. 4, the OLED light-emitting panel provided in this embodiment is a bottom light-emitting structure, and the light-emitting area is further optimized on the basis of embodiment 2, so that the three-dimensional light-emitting area is realized. Specifically, as shown in the cross-sectional view of fig. 5, in a direction perpendicular to the substrate 1, the light emitting areas 2 in each row are distributed in a step from one end of the substrate 1 to the other end thereof, and the light emitting areas in two adjacent rows are separated by a transparent insulating layer.
The specific manufacturing process comprises the following steps: manufacturing a first row of light emitting areas at the right end of the substrate, manufacturing lead layers electrically connected with the light emitting areas of the first row in gaps of the light emitting areas of the first row, and manufacturing transparent insulating layers on the end parts of the light emitting areas of the first row and the substrate in the left area of the light emitting areas of the first row; manufacturing a second row of light emitting areas on the insulating layer close to the end part of the first row of light emitting areas, and manufacturing lead layers electrically connected with the light emitting areas of the second row in gaps formed by the light emitting areas of the second row; and manufacturing a third row of light emitting areas on the insulating layer close to the end part of the second row of light emitting areas, manufacturing lead layers electrically connected with the light emitting areas of the third row in gaps formed by the light emitting areas of the third row, and so on, wherein the lead layers are led out from the end part of the substrate far away from the light emitting areas of the first row, and the light emitting areas of the rows and the lead layers electrically connected with the light emitting areas of the rows are positioned in the same layer. Therefore, the gap between the two rows of light emitting areas can be reduced or even eliminated, and the utilization rate of the space is improved.
The light emitting areas 2 in two adjacent rows shown in fig. 5 are overlapped at the end parts, and the end parts of the light emitting areas in the adjacent rows can be butted, so that seamless uniform light emission among the rows can be realized. Of course, the end portions of the light emitting areas of adjacent rows may be provided with slits, which are not described in detail herein.
Example 4
When the array gap is wide, as shown in fig. 6, two parallel lead structures are disposed in the array gap, because the light emitting areas are 4 × 2 structures, and four light emitting areas are disposed on two sides of each array gap, each lead structure is stacked with an upper lead layer and a bottom lead layer, which total two lead layers and two insulating layers, and an insulating layer is disposed between the two lead layers. The two lead structures total four lead layers, and the long and short distribution design is adopted, so that the electric connection with each luminous area is conveniently realized, and the structure is shown in fig. 6.
Of course, the lead structure is not limited to the two lead structure distribution manners, and the lead structure is designed according to the number of the light emitting areas and the array gap size.
Example 5
As shown in fig. 7, the light emitting regions used in this embodiment are triangular, and form a light emitting matrix having a plurality of triangular light emitting regions, and a plurality of layers of lead structures are respectively disposed in each array gap, however, the number of light emitting regions is not limited to that shown in fig. 7, and a larger number of light emitting regions may be disposed.
Example 6
As shown in fig. 8, the light emitting area used in this embodiment is a hexagonal structure, a total of 80 hexagonal light emitting areas form a 10 × 8 matrix structure, a multi-layer lead structure is disposed in each array gap, the starting ends of the lead layers are disposed on the same side of the array matrix, lead layers with different lengths are distributed on the lead layers in each array gap according to the size from the starting end, the lead layer at the bottommost layer has the longest length and is electrically connected to the light emitting area at the farthest end, the lead layer at the next previous layer has a slightly shorter length than the lead layer at the bottommost layer, and the lead layer at the previous layer has a slightly shorter length than the lead layer at the next lower layer.
Of course, the light emitting area structure may also be in the form of a parallelogram, a polygon, or other structures, and the number of light emitting areas may also be more, which is not described herein again.
Taking three laminated lead layers as an example, the cross-sectional structure will be described, specifically, as shown in fig. 9, three lead layers and three insulating layers are provided on the substrate, the starting ends of the lead layers are flush, and the other ends of the lead layers are sequentially shortened from the bottom layer to the upper layer.
In order to make the lead of the lead layer be well electrically connected with the electrode of the luminous zone, the edge of the insulating layer corresponding to the lower part of the lead position of the lead layer adopts the design of the anti-breaking lapping surface, the angle corresponding to the anti-breaking lapping surface 5 formed at the edge of the insulating layer 42 is 1-85 degrees, of course, the smaller the angle of the anti-breaking lapping surface is, the slower the corresponding anti-breaking lapping surface is, and the larger the angle of the anti-breaking lapping surface is, the steeper the corresponding anti-breaking lapping surface is.
The invention performs structural analysis by using two laminated lead layers. For the lead structure of two lead layers, the bottom lead layer is covered by the insulating layer, the outer side surface of the insulating layer forms an inclined anti-open circuit lapping surface for the lead part of the lead layer to realize lapping, a structure of the anti-open circuit lapping surface with a regular trapezoid cross section is arranged in fig. 10, and the upper lead layer is led out from the side surface and then lapped on the trapezoid anti-open circuit lapping surface and then is electrically connected with the electrode lead of the luminous zone. Of course, the structure form shown in fig. 11 may also be adopted, the insulating layer is configured to be an arc surface structure, and the upper lead layer is overlapped along the arc surface and electrically connected to the corresponding light emitting region.
Of course, the structure is not limited to the two anti-breaking lapping structures shown in fig. 10 and 11, and other anti-breaking lapping surface structures can be adopted, which are not described in detail herein. So set up, can avoid causing the electrode lead wire on the insulating layer to appear the circuit breaking condition because of insulating layer edge angle is too steep, improved life.
The stacked lead structure is arranged in the array gap formed by the luminous zones arranged on the substrate, the lead layers in the lead structure and the insulating layer are arranged at intervals, each lead layer is electrically connected with the electrode lead of the corresponding luminous zone from the side surface, the stacked lead structure is arranged in a three-dimensional manner, the size of the array gap between the luminous zones is greatly reduced, and meanwhile, the length-width ratio of the lead layers is set, so that the size of the lead resistor can be controlled; the insulating layers are arranged between the lead layers, and the lead layers are connected with the anti-breaking lap joint surfaces formed at the edge positions of the insulating layers in a lap joint mode after being led out from the side faces.
The lead layer 41 adopted by the invention is made of metal oxide or metal and alloy materials thereof, the sheet resistance is 0.01 omega/□ -30 omega/□, and the set length-width ratio of the lead is more than 300 and a/b and more than 1; the insulating layer 42 is preferably one or more of silicon nitride, silicon oxide, silicon oxynitride, and siloxane, and the matrix distribution structure of a plurality of light-emitting areas and the array gap size thereof can be established by setting a reasonable ratio of the length to width ratio of the wires, so as to control the resistance of the wire layer well and minimize the resistance as much as possible.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are intended to be within the scope of the invention.
Claims (14)
1. The OLED light-emitting panel comprises a substrate (1) and a plurality of light-emitting areas (2) which are arranged on the substrate (1) in an array distribution mode, wherein each light-emitting area (2) is provided with a lead structure (4) which is electrically connected with the light-emitting area correspondingly, the OLED light-emitting panel is characterized in that each lead structure (4) comprises a lead layer (41) and an insulating layer (42) which are stacked, the insulating layer (42) is arranged between every two adjacent lead layers (41), and the lead layers (41) are electrically connected with the corresponding light-emitting areas (2) one by one after being led out.
2. OLED light-emitting panel according to claim 1, characterized in that the lead structures (4) are arranged on the back side of the respective light-emitting area (2), the lead structures (4) being distributed in a lateral or longitudinal direction of the light-emitting area (2) distributed in an array.
3. The OLED light-emitting panel according to claim 1, characterized in that the lead structures (4) are distributed in the array gaps (3) formed between the light-emitting areas (2) distributed in an array, the electrode leads corresponding to the light-emitting areas (2) are electrically connected, and the lead layers (41) are electrically connected with the corresponding light-emitting areas (2) one by one after being led out from the side.
4. An OLED light-emitting panel as claimed in claim 2 or 3, characterized in that the light-emitting areas (2) of each row are stepped from one end of the substrate (1) to the other end thereof in a direction perpendicular to the substrate (1), and in that adjacent rows of light-emitting areas are separated by a transparent insulating layer (6).
5. The OLED light-emitting panel according to claim 4, characterized in that one or a combination of array gaps, seamless butt joints and end lap joints are present between two adjacent rows of said light-emitting areas (2) in a direction perpendicular to the substrate (1).
6. The OLED light-emitting panel as claimed in claim 3, wherein a disconnection preventing land (5) for leading out the electrodes of the lead layer (41) is formed at the edge of the lower insulating layer (42) corresponding to the position of the side lead-out line of the lead layer (41).
7. The OLED light-emitting panel as claimed in claim 6, characterized in that the angle subtended by the anti-trip interfaces (5) formed at the edges of the insulating layer (42) is from 1 ° to 85 °.
8. OLED light-emitting panel according to claim 6, characterized in that the insulating layer (42) has a trapezoidal and/or circular-arc cross-section.
9. An OLED light-emitting panel as claimed in any one of claims 6 to 8, characterized in that the length of the lead layer (41) close to the substrate (1) is greater than the length of the lead layer (41) remote from the substrate (1).
10. The OLED lighting panel of claim 9, wherein the line width of the longer lead layer is greater than the line width of the shorter lead layer.
11. The OLED lighting panel according to claim 9, characterized in that a plurality of groups of the lead structures (4) are provided in the array gap (3) formed between the light emitting regions (2), and the lead layers (41) in each of the lead structures (4) are electrically connected to the electrode leads of each of the light emitting regions (2) in a one-to-one correspondence, respectively.
12. The OLED lighting panel as claimed in claim 1, wherein said lead layer (41) is a metal oxide or a metal and an alloy thereof, having a sheet resistance of 0.01 Ω/□ -30 Ω/□, and a lead aspect ratio of 300 > a/b > 1.
13. OLED light-emitting panel according to claim 1, characterized in that the insulating layer (42) is one or several of silicon nitride, silicon oxide, silicon oxynitride and siloxane.
14. The OLED light-emitting panel according to claim 1, characterized in that the light-emitting area (2) is shaped as one of a rectangle, a triangle, a parallelogram and a polygon.
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| CN201911372667.3A CN111048572A (en) | 2019-12-27 | 2019-12-27 | OLED light-emitting panel |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112002246A (en) * | 2020-09-28 | 2020-11-27 | 上海天马有机发光显示技术有限公司 | Display panel and display device |
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