CN111048387A - Method for regenerating electrostatic chuck and electrostatic chuck - Google Patents
Method for regenerating electrostatic chuck and electrostatic chuck Download PDFInfo
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- CN111048387A CN111048387A CN201910956853.5A CN201910956853A CN111048387A CN 111048387 A CN111048387 A CN 111048387A CN 201910956853 A CN201910956853 A CN 201910956853A CN 111048387 A CN111048387 A CN 111048387A
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- rib
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- 238000000034 method Methods 0.000 title claims abstract description 74
- 230000001172 regenerating effect Effects 0.000 title claims abstract description 33
- 238000004064 recycling Methods 0.000 claims description 9
- 238000011069 regeneration method Methods 0.000 claims description 8
- 238000000227 grinding Methods 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 230000008929 regeneration Effects 0.000 claims description 4
- 238000005488 sandblasting Methods 0.000 claims description 3
- 238000012423 maintenance Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 31
- 239000000463 material Substances 0.000 description 10
- 238000003754 machining Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004090 dissolution Methods 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention provides a method for regenerating an electrostatic chuck and an electrostatic chuck, which can reduce the processing amount. A method for regenerating an electrostatic chuck, comprising the steps of: providing the electrostatic chuck having a concave portion and a convex portion protruding from a bottom surface of the concave portion; forming a 1 st mask, the 1 st mask covering the concave portion except the convex portion; removing the surface of the electrostatic chuck by means of the 1 st mask; removing the 1 st mask; forming a 2 nd mask at a position of the bottom surface different from the position of the convex portion; removing the surface of the electrostatic chuck by means of the 2 nd mask; and removing the 2 nd mask.
Description
Technical Field
The present disclosure relates to a method of regenerating an electrostatic chuck and an electrostatic chuck.
Background
The plasma processing apparatus is provided with an electrostatic chuck for electrostatically attracting a substrate in a processing chamber. Since the electrostatic chuck is exposed to a process gas in a processing chamber during dry cleaning without a wafer, the surface of the electrostatic chuck may be deteriorated and the adsorption performance may be lowered.
Patent document 1 discloses a method for regenerating an electrostatic chuck: the ribs and the support portions of the suction surface of the chuck body are removed within a predetermined thickness range to form a flat surface, and the ribs and the support portions are newly provided on the flat surface.
Patent document 1: japanese patent laid-open publication No. 2013-162084
Disclosure of Invention
Problems to be solved by the invention
In one aspect, the present disclosure provides a method of recycling an electrostatic chuck and an electrostatic chuck capable of reducing a process amount.
Means for solving the problems
In order to solve the above problem, according to one aspect, there is provided a method for regenerating an electrostatic chuck, including: providing the electrostatic chuck having a concave portion and a convex portion protruding from a bottom surface of the concave portion; forming a 1 st mask, the 1 st mask covering the concave portion except the convex portion; removing the surface of the electrostatic chuck by means of the 1 st mask; removing the 1 st mask; forming a 2 nd mask at a position of the bottom surface different from the position of the convex portion; removing the surface of the electrostatic chuck by means of the 2 nd mask; and removing the 2 nd mask.
ADVANTAGEOUS EFFECTS OF INVENTION
According to one aspect, a method of regenerating an electrostatic chuck and an electrostatic chuck capable of reducing a process amount can be provided.
Drawings
Fig. 1 is a diagram illustrating a method of regenerating an electrostatic chuck according to an embodiment.
Fig. 2 is a diagram illustrating a method of regenerating an electrostatic chuck according to an embodiment.
Fig. 3 is a diagram illustrating a method of regenerating an electrostatic chuck according to a reference example.
Detailed Description
Hereinafter, a mode for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same components are denoted by the same reference numerals, and redundant description thereof may be omitted.
[ method for regenerating electrostatic chuck 100 according to one embodiment ]
A method for regenerating the electrostatic chuck 100 according to an embodiment will be described with reference to fig. 1 to 2. Fig. 1 and 2 are diagrams illustrating a method of regenerating the electrostatic chuck 100 according to an embodiment.
First, the structure of the electrostatic chuck 100 will be described. Fig. 1 (a) is a cross-sectional view of an example of an electrostatic chuck 100. Fig. 1 (b) is a plan view of an example of the electrostatic chuck 100. Fig. 1 (a) is a view of the substrate mounting surface facing upward, and fig. 1 (b) is a view of the substrate mounting surface as viewed from the direction.
The electrostatic chuck 100 has a substrate mounting surface formed on an upper surface of the base 150. The substrate mounting surface is formed with ribs 110, a recess 120 having a bottom surface 130, and a projection 140. The rib 110 and the convex portion 140 are formed integrally with the base portion 150. The base 150, the rib 110, and the projection 140 are formed of a dielectric material such as alumina ceramics, for example.
The rib 110 is an annular portion provided at the outer peripheral edge of the substrate mounting surface of the electrostatic chuck 100. The recess 120 is an internal space surrounded by the annular rib 110. Also, the recess 120 has a bottom surface 130. The convex portion 140 is a columnar portion standing upright from the bottom surface 130. In fig. 1 and 2, two convex portions 140 are schematically illustrated as being formed on the substrate mounting surface of the electrostatic chuck 100, but the shape, number, arrangement, and the like of the convex portions 140 are not limited thereto.
When a substrate (not shown) is placed on the electrostatic chuck 100, the outer peripheral edge of the back surface of the substrate comes into surface contact with the annular rib 110. A plurality of projections 140 are provided in the recess 120, and the upper surfaces of the projections 140 are in surface contact with the back surface of the substrate to support the substrate. An internal electrode, not shown, is embedded in the base 150 of the electrostatic chuck 100. By applying a voltage to the internal electrodes, the substrate placed on the substrate placing surface is attracted.
The electrostatic chuck 100 is disposed in a processing chamber of a plasma processing apparatus, for example. Accordingly, the electrostatic chuck 100 is exposed to a process gas or the like for processing a substrate, and the surface of the electrostatic chuck 100 is deteriorated. The performance of the electrostatic chuck 100 to adsorb a substrate may be degraded due to the deterioration of the surface.
In the method for regenerating the electrostatic chuck 100 according to the embodiment, the adsorption performance of the electrostatic chuck 100 is regenerated by machining the surface of the electrostatic chuck 100. A method of regenerating the electrostatic chuck 100 according to an embodiment will be described below.
< providing Process >
In the supply step, the electrostatic chuck 100 is supplied to a processing apparatus for performing a recycling process on the electrostatic chuck 100, and the electrostatic chuck 100 includes a rib 110 provided on an outer peripheral edge portion, a concave portion 120 surrounded by the rib 110, and a convex portion 140 protruding from a bottom surface 130 of the concave portion 120, as shown in fig. 1 (a) and 1 (b).
< step 1 >
Fig. 1 (c) is a cross-sectional view of an example of the electrostatic chuck 100 in the step 1. Fig. 1 (d) is a plan view of an example of the electrostatic chuck 100 in the step 1. In fig. 1 (d) and fig. 1 (f) described later, the 1 st mask 200 is shown with a dot hatching in a plan view.
In the 1 st step, a 1 st mask 200 is formed on the upper surface (substrate mounting surface) of the electrostatic chuck 100, and the 1 st mask 200 covers the rib 110 and the concave portion 120 except the convex portion 140. For example, the first mask 200 covering the bottom surface 130 of the recess 120 is formed by filling the recess 120 with a mask material. At this time, the upper surface of the convex portion 140 is exposed from the 1 st mask 200. Further, the 1 st mask 200 covering the upper surface of the rib 110 is formed, for example, by coating a mask material on the upper surface of the rib 110. In addition, when the mask material is coated on the upper surface of the rib 110, the mask material may overflow to the side of the electrostatic chuck 100. As the mask in the step 1, for example, a mask formed by curing a liquid resin can be used.
< 2 nd Process >
Fig. 1 (e) is a cross-sectional view of an example of the electrostatic chuck 100 in the step 2. Fig. 1 (f) is a plan view of an example of the electrostatic chuck 100 in the step 2.
In the 2 nd step, the surface of the electrostatic chuck 100 is subjected to a removal process through the 1 st mask 200. The removal processing is, for example, blast processing, grinding processing, laser processing, or the like. For example, in the sandblasting process, a blast material is sprayed toward the upper surface of the electrostatic chuck 100 to grind a portion not covered by the 1 st mask 200. As described above, the bottom surfaces 130 of the ribs 110 and the recesses 120 are covered by the 1 st mask 200. On the other hand, the upper surface of the convex portion 140 is not covered by the 1 st mask 200. Therefore, the convex portions 140 are removed by removing the electrostatic chuck 100 on which the 1 st mask 200 is formed. Since the convex portion 140 is removed, a convex portion trace 141 is formed.
In the 2 nd step, the height of the upper surface of the convex mark 141 is preferably substantially equal to the height of the bottom surface 130. In the example shown in fig. 1 (e), the upper surface of the convex portion trace 141 is higher than the bottom surface 130, and the convex portion trace 141 is convex with respect to the bottom surface 130. For example, the upper surface of the convex mark 141 may be lower than the bottom surface 130, and the convex mark 141 may be concave with respect to the bottom surface 130.
< step 3 >
Fig. 1 (g) is a cross-sectional view of an example of the electrostatic chuck 100 in the step 3. Fig. 1 (h) is a plan view of an example of the electrostatic chuck 100 in the step 3. In fig. 1 (h) and fig. 2 (b) described later, a convex mark 141 in a plan view is shown by a broken line.
In the 3 rd process, the 1 st mask 200 is removed from the electrostatic chuck 100. The method of removing the 1 st mask 200 is not limited, and the 1 st mask 200 may be removed by, for example, dissolution (japanese: dissolution) or peeling.
< step 4 >
Fig. 2 (a) is a cross-sectional view of an example of the electrostatic chuck 100 in the 4 th step. Fig. 2 (b) is a plan view of an example of the electrostatic chuck 100 in the 4 th step. In fig. 2 (b) and fig. 2 (d) described later, the 2 nd mask 300 is shown with a dot hatching in a plan view.
In the 4 th step, a 2 nd mask 300 is formed on the upper surface of the electrostatic chuck 100. The 2 nd mask 300 is formed at a position different from the position where the convex portion 140 (convex portion trace 141) is provided in the bottom surface 130. For example, the 2 nd mask 300 is formed with an arrangement pattern in which the arrangement pattern of the convex portions 140 is rotated by a predetermined angle (90 ° in the example of fig. 2 (b)) with the center of the electrostatic chuck 100 as a rotation center in a plan view. In addition, as the mask in the 4 th step, for example, a mask formed by curing a liquid resin may be used, or a sheet-like mask may be formed by pasting, and the mask is not limited.
< step 5 >
Fig. 2 (c) is a cross-sectional view of an example of the electrostatic chuck 100 in the step 5. Fig. 2 (d) is a plan view of an example of the electrostatic chuck 100 in the step 5.
In the 5 th step, the surface of the electrostatic chuck 100 is subjected to a removal process through the 2 nd mask 300. The removal processing is, for example, blast processing, grinding processing, laser processing, or the like. For example, in the sandblasting process, a blast material is sprayed toward the upper surface of the electrostatic chuck 100 to grind a portion not covered by the 2 nd mask 300. As described above, a portion of the bottom surface 130 is covered by the 2 nd mask 300. On the other hand, the rib 110, the remaining portion of the bottom surface 130, and the projection mark 141 are not covered with the 2 nd mask 300. Therefore, by removing the electrostatic chuck 100 on which the 2 nd mask 300 is formed, the rib 110, the remaining portion of the bottom surface 130, and the convex mark 141 are uniformly removed. The machined rib 110 in the 5 th step is referred to as a rib 112, the machined bottom surface 130 is referred to as a bottom surface 132, and the machined projection mark 141 is referred to as a projection mark 142. In fig. 2 (d) and fig. 2 (f) described later, a projection mark 142 in a plan view is shown by a broken line. Then, by the removal processing, the height of the bottom surface 132 after the processing is made lower than the height of the bottom surface 130 before the processing, thereby forming a new convex portion 145 at the position where the 2 nd mask 300 is applied.
< step 6 >
Fig. 2 (e) is a cross-sectional view of an example of the electrostatic chuck 100 in the step 6. Fig. 2 (f) is a plan view of an example of the electrostatic chuck 100 in the step 6.
In the 6 th process, the 2 nd mask 300 is removed from the electrostatic chuck 100. The method of removing the 2 nd mask 300 can use, for example, finish machining. The finish machining includes, for example, polishing, grinding, laser machining, and the like. At this time, the upper surface of the machined rib 112 and the upper surface of the new convex portion 145 are also polished. The method of removing the 2 nd mask 300 is not limited to this, and the 2 nd mask 300 may be removed by, for example, dissolution or peeling. When the 2 nd mask 300 is removed by dissolution, peeling, or the like, a step of polishing the upper surface of the rib 112 after processing and the upper surface of the new convex portion 145 may be added after the 6 th step.
< method for regenerating electrostatic chuck according to reference example >
Here, a method of regenerating the electrostatic chuck 500 according to the reference example will be described with reference to fig. 3. Fig. 3 is a diagram illustrating a method of regenerating the electrostatic chuck 500 according to the reference example. The configuration of the electrostatic chuck before the regeneration process is the same as that shown in fig. 1 (a) and 1 (b), and redundant description is omitted.
Here, as a method for regenerating the electrostatic chuck, the following methods are conceivable: a mask is formed at the positions of the conventional rib 110 and the convex portion 140, and the bottom surface 130 is removed by a removal process to regenerate the electrostatic chuck. However, it is technically difficult to accurately align the mask with the positions of the existing ribs 110 and the protrusions 140. Therefore, in the method for recycling the electrostatic chuck 500 according to the reference example, the ribs 510, the convex portions 540, and the like are newly formed after the conventional ribs 110, convex portions 140, and the like are ground.
(Process for providing reference example)
In the supply step of the reference example, the electrostatic chuck 100 is supplied to a processing apparatus which performs a recycling process on the electrostatic chuck 100, and the electrostatic chuck 100 includes the rib 110 provided on the outer peripheral edge portion, the concave portion 120 surrounded by the rib 110, and the convex portion 140 protruding from the bottom surface 130 of the concave portion 120, as shown in fig. 1 (a) and 1 (b).
(step 1 of reference example)
Fig. 3 (a) is a cross-sectional view of an example of the electrostatic chuck 500 in the step 1 of the reference example. Fig. 3 (b) is a plan view of an example of the electrostatic chuck 500 in the step 1 of the reference example.
In the first step of reference example 1, the bottom surfaces 130 and the convex portions 140 of the ribs 110 and the concave portions 120 are removed by grinding. At this time, in order to secure the parallelism of the upper surface 560 of the electrostatic chuck 500, the grinding amount is increased, and the base portion 550 of the electrostatic chuck 500 is largely removed.
(step 2 of reference example)
Fig. 3 (c) is a cross-sectional view of an example of the electrostatic chuck 500 in the step 2 of the reference example. Fig. 3 (d) is a plan view of an example of the electrostatic chuck 500 in the step 2 of the reference example. In fig. 3 (d) and fig. 3 (f) described later, the mask 600 is shown with a dot-hatching in a plan view.
In the 2 nd step of the reference example, a mask 600 is formed on the upper surface of the electrostatic chuck 100. The 2 nd mask 300 is formed at a position for providing a new rib and a new protrusion.
(step 3 of reference example)
Fig. 3 (e) is a cross-sectional view of an example of the electrostatic chuck 500 in the step 3 of the reference example. Fig. 3 (f) is a plan view of an example of the electrostatic chuck 500 in the step 3 of the reference example.
In the 3 rd step of the reference example, the surface of the electrostatic chuck 500 on which the mask 600 is formed is subjected to removal processing (for example, blast processing). By performing the removal process on the electrostatic chuck 500 on which the mask 600 is formed, the portion not covered by the mask 600 is uniformly removed. Thereby, a groove 520 having a bottom surface 530 is formed. Further, by the removal process, the height of the bottom surface 530 after the process is lower than the height of the upper surface 560 before the process, thereby forming a new rib 510 and a new protrusion 540 at the position where the mask 600 is applied.
(step 4 of reference example)
Fig. 3 (g) is a cross-sectional view of an example of the electrostatic chuck 500 in the step 4 of the reference example. Fig. 3 (h) is a plan view of an example of the electrostatic chuck 500 in the 4 th step of the reference example.
In the 4 th step of the reference example, the mask 600 is removed from the electrostatic chuck 500.
Next, a method for regenerating the electrostatic chuck 100 according to an embodiment will be described while comparing with the method for regenerating the electrostatic chuck 500 according to the reference example.
According to the method for regenerating the electrostatic chuck 100 according to the embodiment, the surface having been modified can be removed, and thus the adsorption performance of the electrostatic chuck 100 can be recovered.
Here, as shown by comparing fig. 2 (e) and 3 (g), the method for regenerating the electrostatic chuck 100 according to the embodiment can reduce the amount of machining in the height direction of the electrostatic chuck 100, as compared with the reference example. This can shorten the processing time. In addition, compared to the reference example, the method for regenerating the electrostatic chuck 100 according to the embodiment can leave a large machining margin on the electrostatic chuck 100 side, and thus can increase the number of times of regeneration of the electrostatic chuck 100. Thus, the lifetime of the electrostatic chuck 100 can be extended.
In the method for regenerating the electrostatic chuck 100 according to the embodiment, the mask forming operation can be easily performed as compared with the case where the mask is formed accurately at the positions of the ribs 110 and the convex portions 140 in the related art. That is, in the step 1, the mask material is filled into the concave portion 120 and cured, so that the mask can be easily formed at a position other than the convex portion 140. In the 4 th step, since the 2 nd mask 300 is formed at a position different from the position where the convex portion 140 (convex portion mark 141) is provided in the bottom surface 130, strict alignment is not required.
In the method of regenerating the electrostatic chuck 100 according to the embodiment, the convex portion trace 142 remains on the new bottom surface 132. However, when the substrate is attracted by the electrostatic chuck 100, the influence of the ribs 112 and the protrusions 145 is dominant, and the influence of the presence or absence of the irregularities of the bottom surface 132 is small. Therefore, even if the convex portion trace 142 remains, the suction performance of the electrostatic chuck 100 can be ensured.
The timing of performing the process by the regeneration method of the electrostatic chuck 100 according to the embodiment may be determined based on, for example, an operating time (for example, a high-frequency application time) of the plasma processing apparatus. Further, the determination may be made based on a maintenance cycle of the plasma processing apparatus.
Further, a through hole, not shown, is provided in the bottom surface 130 of the electrostatic chuck 100. A pin that moves up and down is disposed in the through hole. The substrate placed on the substrate placing surface of the electrostatic chuck 100 can be lifted by the lifting of the pins. Then, the substrate supported by the plurality of pins can be placed on the substrate placing surface of the electrostatic chuck 100 by the lowering of the pins. Here, when the surface of the substrate mounting surface is gradually changed in quality with time by the process gas or the like, the attraction force between the substrate and the electrostatic chuck may be gradually increased along with this. In this case, the drive torque value of the pin when the substrate is lifted by raising the pin after the substrate processing also gradually rises. Therefore, the timing of performing the regeneration process on the electrostatic chuck can be determined based on the drive torque value of the pin.
The preferred embodiments of the present disclosure have been described in detail above. However, the present disclosure is not limited to the above-described embodiments. The above-described embodiments can be applied to various modifications, substitutions, and the like without departing from the scope of the present disclosure. Further, the features described in the respective descriptions can be combined as long as no technical contradiction occurs.
The electrostatic chuck 100 used in the recycling method of the present disclosure is described as the electrostatic chuck 100 having the annular rib 110 at the outer peripheral edge portion of the substrate mounting surface, but is not limited thereto. The ribs 110 may be formed on the substrate mounting surface of the electrostatic chuck 100.
That is, in the electrostatic chuck according to the other embodiment, the substrate mounting surface is formed on the upper surface of the base 150. The substrate mounting surface has a convex portion 140 and a concave portion 120 having a bottom surface 130. The protrusion 140 is formed integrally with the base 150. The base 150 and the projection 140 are formed of a dielectric material such as alumina ceramics, for example. The concave portion 120 is an internal space recessed from the convex portion 140 on the substrate mounting surface. Also, the recess 120 has a bottom surface 130. The convex portion 140 is a columnar portion standing upright from the bottom surface 130.
In the electrostatic chuck according to the other embodiment, the electrostatic chuck according to the other embodiment can be regenerated in the same manner as the regeneration method of the electrostatic chuck 100 according to the one embodiment shown in fig. 1 and 2.
In the step 1, a 1 st mask 200 covering the concave portion 120 excluding the convex portion 140 is formed on the upper surface (substrate mounting surface) of the electrostatic chuck according to the other embodiment. For example, the first mask 200 covering the bottom surface 130 of the recess 120 is formed by filling the recess 120 with a mask material. At this time, the upper surface of the convex portion 140 is exposed from the 1 st mask 200. When the mask material is applied to the bottom surface 130, the mask material may overflow the side surface of the electrostatic chuck according to the other embodiment.
In the 6 th step, the 2 nd mask 300 is removed from the electrostatic chuck according to the other embodiment. At this time, the upper surface of the new convex portion 145 is polished.
The other points are the same as those of the method for regenerating the electrostatic chuck 100 according to the embodiment, and redundant description is omitted.
As described above, the electrostatic chuck without ribs can recover the adsorption performance in the same manner as the regeneration method of the electrostatic chuck 100 according to the embodiment.
The Plasma processing apparatus of the present disclosure can be applied to any type of Capacitative Coupled Plasma (CCP), Inductive Coupled Plasma (ICP), Radial linear Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), Helicon Wave Plasma (HWP), or the like.
Further, although the case of using the removal process in the 2 nd step and the 5 th step has been described, the method of removing the portion not covered with the masks 200 and 300 is not limited to this, and other methods may be used. For example, plasma etching or the like may be used.
Claims (9)
1. A method for regenerating an electrostatic chuck, wherein,
the regeneration method of the electrostatic chuck comprises the following steps:
providing the electrostatic chuck having a concave portion and a convex portion protruding from a bottom surface of the concave portion;
forming a 1 st mask, the 1 st mask covering the concave portion except the convex portion;
removing the surface of the electrostatic chuck by means of the 1 st mask;
removing the 1 st mask;
forming a 2 nd mask at a position of the bottom surface different from the position of the convex portion;
removing the surface of the electrostatic chuck by means of the 2 nd mask; and
removing the 2 nd mask.
2. The method for regenerating an electrostatic chuck according to claim 1,
in the step of removing the surface of the electrostatic chuck through the 1 st mask,
and removing the convex part.
3. The method for recycling an electrostatic chuck according to claim 1 or 2,
in the step of removing the surface of the electrostatic chuck through the 2 nd mask,
and forming a new convex part at the position where the 2 nd mask is formed.
4. The method for regenerating an electrostatic chuck according to claim 3,
in the process of removing the 2 nd mask,
and grinding the upper surface of the new convex part.
5. The method for recycling an electrostatic chuck according to any one of claims 1 to 3,
the electrostatic chuck provided in the step of providing the electrostatic chuck has a rib provided at an outer peripheral edge portion of the electrostatic chuck,
in the step of forming the 1 st mask, the 1 st mask is formed, and the 1 st mask covers the ribs and the recessed portions except for the protruding portions.
6. The method for regenerating an electrostatic chuck according to claim 5,
in the process of removing the 2 nd mask,
and grinding the upper surface of the new convex part and the upper surface of the rib.
7. The method for recycling an electrostatic chuck according to any one of claims 1 to 6,
in the step of removing the surface of the electrostatic chuck,
sand blasting is used.
8. The method for recycling an electrostatic chuck according to any one of claims 1 to 7,
the timing for performing the regeneration process is determined based on an operating time of a plasma processing apparatus in which the electrostatic chuck is disposed, a maintenance cycle of the plasma processing apparatus, and a drive torque value of a pin that moves up and down in a through hole that penetrates the electrostatic chuck.
9. An electrostatic chuck, wherein,
the electrostatic chuck is regenerated by the method for regenerating an electrostatic chuck according to any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410317883.2A CN118098923A (en) | 2018-10-11 | 2019-10-10 | Method for regenerating electrostatic chuck |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-192771 | 2018-10-11 | ||
| JP2018192771A JP7134826B2 (en) | 2018-10-11 | 2018-10-11 | Electrostatic chuck production method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410317883.2A Division CN118098923A (en) | 2018-10-11 | 2019-10-10 | Method for regenerating electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111048387A true CN111048387A (en) | 2020-04-21 |
| CN111048387B CN111048387B (en) | 2024-04-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410317883.2A Pending CN118098923A (en) | 2018-10-11 | 2019-10-10 | Method for regenerating electrostatic chuck |
| CN201910956853.5A Active CN111048387B (en) | 2018-10-11 | 2019-10-10 | Method for regenerating electrostatic chuck and electrostatic chuck |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410317883.2A Pending CN118098923A (en) | 2018-10-11 | 2019-10-10 | Method for regenerating electrostatic chuck |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7134826B2 (en) |
| KR (2) | KR102526987B1 (en) |
| CN (2) | CN118098923A (en) |
| TW (1) | TWI827692B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP7391283B2 (en) | 2021-11-18 | 2023-12-04 | 東京エレクトロン株式会社 | Substrate holding method and substrate processing device |
| WO2024137314A1 (en) * | 2022-12-20 | 2024-06-27 | Lam Research Corporation | Treating an electrostatic chuck pedestal |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101546724A (en) * | 2008-03-28 | 2009-09-30 | 东京毅力科创株式会社 | Electrostatic chuck and manufacturing method thereof |
| JP2012156344A (en) * | 2011-01-27 | 2012-08-16 | Disco Abrasive Syst Ltd | Device and method for removing annular convex portion |
| JP2013162084A (en) * | 2012-02-08 | 2013-08-19 | Ulvac Japan Ltd | Electrostatic chuck regenerating method |
| CN103493194A (en) * | 2011-06-02 | 2014-01-01 | 应用材料公司 | Electrostatic chuck aln dielectric repair |
| CN106663653A (en) * | 2014-09-30 | 2017-05-10 | 住友大阪水泥股份有限公司 | Electrostatic chuck device |
| CN107208261A (en) * | 2015-02-06 | 2017-09-26 | 应用材料公司 | Radially outer pad for electrostatic chuck surface is designed |
| JP2018014515A (en) * | 2017-09-07 | 2018-01-25 | 松田産業株式会社 | Electrostatic chuck and manufacturing method therefor, and generation method for electrostatic chuck |
| CN108461397A (en) * | 2017-02-17 | 2018-08-28 | 株式会社迪思科 | Plasma etching method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10418266B2 (en) * | 2013-11-22 | 2019-09-17 | Kyocera Corporation | Electrostatic chuck |
| JP2018006573A (en) * | 2016-07-01 | 2018-01-11 | 松田産業株式会社 | Electrostatic chuck, manufacturing method thereof and reproduction method for electrostatic chuck |
-
2018
- 2018-10-11 JP JP2018192771A patent/JP7134826B2/en active Active
-
2019
- 2019-10-02 TW TW108135685A patent/TWI827692B/en active
- 2019-10-02 KR KR1020190122306A patent/KR102526987B1/en active IP Right Grant
- 2019-10-10 CN CN202410317883.2A patent/CN118098923A/en active Pending
- 2019-10-10 CN CN201910956853.5A patent/CN111048387B/en active Active
-
2023
- 2023-04-25 KR KR1020230053806A patent/KR20230062796A/en not_active Application Discontinuation
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101546724A (en) * | 2008-03-28 | 2009-09-30 | 东京毅力科创株式会社 | Electrostatic chuck and manufacturing method thereof |
| JP2012156344A (en) * | 2011-01-27 | 2012-08-16 | Disco Abrasive Syst Ltd | Device and method for removing annular convex portion |
| CN103493194A (en) * | 2011-06-02 | 2014-01-01 | 应用材料公司 | Electrostatic chuck aln dielectric repair |
| JP2013162084A (en) * | 2012-02-08 | 2013-08-19 | Ulvac Japan Ltd | Electrostatic chuck regenerating method |
| CN106663653A (en) * | 2014-09-30 | 2017-05-10 | 住友大阪水泥股份有限公司 | Electrostatic chuck device |
| CN107208261A (en) * | 2015-02-06 | 2017-09-26 | 应用材料公司 | Radially outer pad for electrostatic chuck surface is designed |
| CN108461397A (en) * | 2017-02-17 | 2018-08-28 | 株式会社迪思科 | Plasma etching method |
| JP2018014515A (en) * | 2017-09-07 | 2018-01-25 | 松田産業株式会社 | Electrostatic chuck and manufacturing method therefor, and generation method for electrostatic chuck |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111048387B (en) | 2024-04-05 |
| TW202027211A (en) | 2020-07-16 |
| KR20230062796A (en) | 2023-05-09 |
| KR20200041259A (en) | 2020-04-21 |
| JP2020061489A (en) | 2020-04-16 |
| CN118098923A (en) | 2024-05-28 |
| TWI827692B (en) | 2024-01-01 |
| KR102526987B1 (en) | 2023-04-28 |
| JP7134826B2 (en) | 2022-09-12 |
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