CN111048387B - Method for regenerating electrostatic chuck and electrostatic chuck - Google Patents
Method for regenerating electrostatic chuck and electrostatic chuck Download PDFInfo
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- CN111048387B CN111048387B CN201910956853.5A CN201910956853A CN111048387B CN 111048387 B CN111048387 B CN 111048387B CN 201910956853 A CN201910956853 A CN 201910956853A CN 111048387 B CN111048387 B CN 111048387B
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- 238000000034 method Methods 0.000 title claims abstract description 70
- 230000001172 regenerating effect Effects 0.000 title claims abstract description 36
- 238000011069 regeneration method Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 31
- 238000000227 grinding Methods 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000004064 recycling Methods 0.000 claims description 5
- 230000008929 regeneration Effects 0.000 claims description 5
- 238000012423 maintenance Methods 0.000 claims description 2
- 238000005488 sandblasting Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 10
- 238000005422 blasting Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004090 dissolution Methods 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention provides a method for regenerating an electrostatic chuck and the electrostatic chuck capable of reducing the processing amount. A regeneration method of an electrostatic chuck includes the following steps: providing the electrostatic chuck having a recess and a protrusion protruding from a bottom surface of the recess; forming a 1 st mask covering the concave portions except the convex portions; removing the surface of the electrostatic chuck by means of the 1 st mask; removing the 1 st mask; forming a 2 nd mask at a position of the bottom surface different from a position of the convex portion; removing the surface of the electrostatic chuck by means of the 2 nd mask; and removing the 2 nd mask.
Description
Technical Field
The present disclosure relates to a method of regenerating an electrostatic chuck and an electrostatic chuck.
Background
The plasma processing apparatus is provided with an electrostatic chuck for electrostatically attracting a substrate in a processing chamber. Since the electrostatic chuck is exposed to the process gas in the process chamber during dry cleaning of the wafer or the like, the surface of the electrostatic chuck may deteriorate and the adsorption performance may be degraded.
Patent document 1 discloses a method for regenerating an electrostatic chuck: the rib and the support portion of the suction surface of the chuck body are removed within a predetermined thickness range to form a flat surface, and the rib and the support portion are newly provided on the flat surface.
Patent document 1: japanese patent laid-open publication No. 2013-162084
Disclosure of Invention
Problems to be solved by the invention
In one aspect, the present disclosure provides a method of recycling an electrostatic chuck and an electrostatic chuck capable of reducing a processing amount.
Solution for solving the problem
In order to solve the above-described problems, according to one aspect, there is provided a method for regenerating an electrostatic chuck, comprising: providing the electrostatic chuck having a recess and a protrusion protruding from a bottom surface of the recess; forming a 1 st mask covering the concave portions except the convex portions; removing the surface of the electrostatic chuck by means of the 1 st mask; removing the 1 st mask; forming a 2 nd mask at a position of the bottom surface different from a position of the convex portion; removing the surface of the electrostatic chuck by means of the 2 nd mask; and removing the 2 nd mask.
ADVANTAGEOUS EFFECTS OF INVENTION
According to one aspect, a method of regenerating an electrostatic chuck and an electrostatic chuck capable of reducing the processing amount can be provided.
Drawings
Fig. 1 is a diagram illustrating a method for regenerating an electrostatic chuck according to an embodiment.
Fig. 2 is a diagram illustrating a method for regenerating an electrostatic chuck according to an embodiment.
Fig. 3 is a diagram illustrating a method of regenerating an electrostatic chuck according to a reference example.
Detailed Description
The following describes modes for carrying out the present disclosure with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and overlapping description thereof may be omitted.
[ method for regenerating electrostatic chuck 100 according to one embodiment ]
A method for regenerating the electrostatic chuck 100 according to an embodiment will be described with reference to fig. 1 to 2. Fig. 1 and 2 are diagrams illustrating a method of regenerating an electrostatic chuck 100 according to an embodiment.
First, the structure of the electrostatic chuck 100 will be described. Fig. 1 (a) is a cross-sectional view of an example of an electrostatic chuck 100. Fig. 1 (b) is a top view of an example of the electrostatic chuck 100. Fig. 1 (a) is a view of the substrate mounting surface facing upward, and fig. 1 (b) is a view of the substrate mounting surface viewed from the direction.
The electrostatic chuck 100 has a substrate mounting surface formed on an upper surface of the base 150. A rib 110, a concave portion 120 having a bottom surface 130, and a convex portion 140 are formed on the substrate mounting surface. The rib 110, the protrusion 140 and the base 150 are integrally formed. The base 150, the rib 110, and the convex portion 140 are formed of a dielectric such as alumina ceramic, for example.
The rib 110 is an annular portion provided at an outer peripheral edge portion of the substrate mounting surface of the electrostatic chuck 100. The recess 120 is an inner space surrounded by the annular rib 110. Further, the recess 120 has a bottom surface 130. The convex portion 140 is a columnar portion erected from the bottom surface 130. In fig. 1 and 2, two protrusions 140 are schematically illustrated on the substrate mounting surface of the electrostatic chuck 100, but the shape, number, arrangement, and the like of the protrusions 140 are not limited thereto.
When a substrate (not shown) is placed on the electrostatic chuck 100, the outer peripheral edge portion of the back surface of the substrate is in surface contact with the annular rib 110. In addition, a plurality of convex portions 140 are provided in the concave portion 120, and the upper surfaces of the convex portions 140 are in contact with the rear surface of the substrate to support the substrate. An internal electrode, not shown, is embedded in the base 150 of the electrostatic chuck 100. By applying a voltage to the internal electrode, the substrate placed on the substrate placement surface is adsorbed.
The electrostatic chuck 100 is disposed, for example, in a processing chamber of a plasma processing apparatus. Accordingly, the electrostatic chuck 100 is exposed to a process gas or the like for processing a substrate, and the surface of the electrostatic chuck 100 is deteriorated. The electrostatic chuck 100 may have a reduced substrate adsorption performance due to surface deterioration.
In the method for regenerating the electrostatic chuck 100 according to one embodiment, the surface of the electrostatic chuck 100 is shaved off, thereby regenerating the suction performance of the electrostatic chuck 100. Hereinafter, a method for regenerating the electrostatic chuck 100 according to an embodiment will be described.
< providing procedure >
In the supplying step, the electrostatic chuck 100 is supplied to a processing apparatus that performs a regeneration process on the electrostatic chuck 100, and the electrostatic chuck 100 includes a rib 110 provided at an outer peripheral edge portion, a concave portion 120 surrounded by the rib 110, and a convex portion 140 protruding from a bottom surface 130 of the concave portion 120, as shown in fig. 1 (a) and 1 (b).
< procedure 1 >)
Fig. 1 (c) is a cross-sectional view of an example of the electrostatic chuck 100 in step 1. Fig. 1 (d) is a plan view of an example of the electrostatic chuck 100 in step 1. In fig. 1 (d) and fig. 1 (f) described later, dot shading is illustrated on the 1 st mask 200 in a plan view.
In step 1, a 1 st mask 200 is formed on the upper surface (substrate mounting surface) of the electrostatic chuck 100, and the 1 st mask 200 covers the ribs 110 and the concave portions 120 except the convex portions 140. For example, the 1 st mask 200 covering the bottom surface 130 of the recess 120 is formed by filling the recess 120 with a mask material. At this time, the upper surface of the convex portion 140 is exposed from the 1 st mask 200. Further, the 1 st mask 200 covering the upper surface of the rib 110 is formed by, for example, coating a mask material on the upper surface of the rib 110. In addition, when the upper surface of the rib 110 is coated with the mask material, the mask material may overflow to the side of the electrostatic chuck 100. As the mask in step 1, for example, a mask formed by curing a liquid resin can be used.
< procedure 2 >
Fig. 1 (e) is a cross-sectional view of an example of the electrostatic chuck 100 in step 2. Fig. 1 (f) is a plan view of an example of the electrostatic chuck 100 in step 2.
In step 2, the surface of the electrostatic chuck 100 is removed through the 1 st mask 200. The removal processing is, for example, blasting, grinding, laser processing, or the like. For example, in the blasting process, a blasting material is sprayed toward the upper surface of the electrostatic chuck 100 to grind a portion not covered by the 1 st mask 200. As described above, the rib 110 and the bottom surface 130 of the recess 120 are covered by the 1 st mask 200. On the other hand, the upper surface of the convex portion 140 is not covered by the 1 st mask 200. Therefore, the convex portion 140 is removed by performing the removal processing on the electrostatic chuck 100 formed with the 1 st mask 200. Since the convex portion 140 is removed, a convex portion trace 141 is formed.
In step 2, the height of the upper surface of the convex portion trace 141 is preferably substantially equal to the height of the bottom surface 130. In the example shown in fig. 1 (e), the upper surface of the convex trace 141 is shown to be higher than the bottom surface 130, and the convex trace 141 is shown to be convex with respect to the bottom surface 130. For example, the upper surface of the convex portion trace 141 may be lower than the bottom surface 130, and the convex portion trace 141 may be concave with respect to the bottom surface 130.
< procedure 3 >)
Fig. 1 (g) is a cross-sectional view of an example of the electrostatic chuck 100 in step 3. Fig. 1 (h) is a plan view of an example of the electrostatic chuck 100 in step 3. In fig. 1 (h) and fig. 2 (b) described later, a convex portion trace 141 in a plan view is illustrated by a broken line.
In step 3, the 1 st mask 200 is removed from the electrostatic chuck 100. The method for removing the 1 st mask 200 is not limited, and the 1 st mask 200 may be removed by, for example, dissolution (japanese: dissolution) or peeling.
< procedure 4 >
Fig. 2 (a) is a cross-sectional view of an example of the electrostatic chuck 100 in step 4. Fig. 2 (b) is a plan view of an example of the electrostatic chuck 100 in step 4. In fig. 2 (b) and fig. 2 (d) described later, dot hatching is applied to the 2 nd mask 300 in a plan view.
In step 4, the 2 nd mask 300 is formed on the upper surface of the electrostatic chuck 100. The 2 nd mask 300 is formed at a position different from the position where the convex portion 140 (convex portion trace 141) is provided in the bottom surface 130. For example, the 2 nd mask 300 is formed by an arrangement pattern in which the arrangement pattern of the convex portions 140 is rotated by a predetermined angle (90 ° in the example of fig. 2 (b)) with the center of the electrostatic chuck 100 as the rotation center in a plan view. The mask in the 4 th step may be, for example, a mask formed by curing a liquid resin, or a mask formed in a sheet shape by pasting, and is not limited.
< procedure 5 >
Fig. 2 (c) is a cross-sectional view of an example of the electrostatic chuck 100 in step 5. Fig. 2 (d) is a plan view of an example of the electrostatic chuck 100 in step 5.
In step 5, the surface of the electrostatic chuck 100 is removed through the 2 nd mask 300. The removal processing is, for example, blasting, grinding, laser processing, or the like. For example, in the blasting process, a blasting material is sprayed toward the upper surface of the electrostatic chuck 100 to grind a portion not covered by the 2 nd mask 300. As described above, a portion of the bottom surface 130 is covered by the 2 nd mask 300. On the other hand, the rib 110, the remaining portion of the bottom surface 130, and the convex trace 141 are not covered by the 2 nd mask 300. Therefore, the removal process is performed on the electrostatic chuck 100 on which the 2 nd mask 300 is formed, thereby uniformly removing the rib 110, the remaining portion of the bottom surface 130, and the convex trace 141. The processed rib 110 in step 5 is referred to as a rib 112, the processed bottom surface 130 is referred to as a bottom surface 132, and the processed convex portion trace 141 is referred to as a convex portion trace 142. In fig. 2 (d) and fig. 2 (f) described later, a convex trace 142 in a plan view is illustrated by a broken line. Then, by the removal processing, the height of the processed bottom surface 132 is made lower than the height of the bottom surface 130 before processing, whereby a new convex portion 145 is formed at the position where the 2 nd mask 300 is applied.
< procedure 6 >)
Fig. 2 (e) is a cross-sectional view of an example of the electrostatic chuck 100 in step 6. Fig. 2 (f) is a plan view of an example of the electrostatic chuck 100 in step 6.
In step 6, the 2 nd mask 300 is removed from the electrostatic chuck 100. The method of removing the 2 nd mask 300 can use, for example, finishing. Further, the finishing includes polishing, grinding, laser processing, and the like. At this time, the upper surface of the processed rib 112 and the upper surface of the new convex portion 145 are also polished. The method of removing the 2 nd mask 300 is not limited to this, and the 2 nd mask 300 may be removed by, for example, dissolution or peeling. When the 2 nd mask 300 is removed by dissolution, peeling, or the like, a step of polishing the upper surface of the processed rib 112 and the upper surface of the new convex portion 145 may be added after the 6 th step.
Reference example relates to a method for regenerating an electrostatic chuck
A method for regenerating the electrostatic chuck 500 according to the reference example will be described with reference to fig. 3. Fig. 3 is a diagram illustrating a method of regenerating the electrostatic chuck 500 according to the reference example. The structure of the electrostatic chuck before the regeneration process is the same as that shown in fig. 1 (a) and 1 (b), and a repetitive description thereof is omitted.
Here, as a method for regenerating an electrostatic chuck, the following regeneration method is considered: a mask is formed at the positions of the conventional rib 110 and the protrusion 140, and the bottom surface 130 is removed by a removal process to regenerate the electrostatic chuck. However, it is technically difficult to accurately align the mask with the positions of the existing ribs 110 and projections 140. Therefore, in the method for regenerating the electrostatic chuck 500 according to the reference example, the conventional rib 110, the conventional convex portion 140, and the like are ground, and then the rib 510, the conventional convex portion 540, and the like are formed again.
(procedure for providing reference example)
In the providing step of the reference example, the electrostatic chuck 100 is provided to a processing apparatus that performs a recycling process on the electrostatic chuck 100, and the electrostatic chuck 100 includes the rib 110 provided at the outer peripheral edge portion, the concave portion 120 surrounded by the rib 110, and the convex portion 140 protruding from the bottom surface 130 of the concave portion 120, as shown in fig. 1 (a) and 1 (b).
(step 1 of reference example)
Fig. 3 (a) is a cross-sectional view of an example of the electrostatic chuck 500 in the step 1 of the reference example. Fig. 3 (b) is a plan view of an example of the electrostatic chuck 500 in the step 1 of the reference example.
In step 1 of the reference example, the rib 110, the bottom surface 130 of the recess 120, and the convex 140 are removed by grinding. At this time, in order to secure parallelism of the upper surface 560 of the electrostatic chuck 500, the grinding amount is increased, and the base 550 of the electrostatic chuck 500 is largely removed.
(step 2 of reference example)
Fig. 3 (c) is a cross-sectional view of an example of the electrostatic chuck 500 in step 2 of the reference example. Fig. 3 (d) is a plan view of an example of the electrostatic chuck 500 in step 2 of the reference example. In fig. 3 (d) and fig. 3 (f) described later, dot hatching is applied to the mask 600 in a plan view.
In step 2 of the reference example, a mask 600 is formed on the upper surface of the electrostatic chuck 100. The 2 nd mask 300 is formed at a position for providing a new rib and a new protrusion.
(step 3 of reference example)
Fig. 3 (e) is a cross-sectional view of an example of the electrostatic chuck 500 in the 3 rd step of the reference example. Fig. 3 (f) is a plan view of an example of the electrostatic chuck 500 in the 3 rd step of the reference example.
In step 3 of the reference example, the surface of the electrostatic chuck 500 on which the mask 600 is formed is subjected to a removal process (e.g., a sandblasting process). The electrostatic chuck 500 on which the mask 600 is formed is subjected to a removal process, whereby a portion not covered by the mask 600 is uniformly removed. Thereby, a groove 520 having a bottom surface 530 is formed. Further, by removing the processing, the height of the processed bottom surface 530 is lower than the height of the upper surface 560 before the processing, thereby forming new ribs 510 and new protrusions 540 at the positions where the mask 600 is applied.
(step 4 of reference example)
Fig. 3 (g) is a cross-sectional view of an example of the electrostatic chuck 500 in step 4 of the reference example. Fig. 3 (h) is a plan view of an example of the electrostatic chuck 500 in the 4 th step of the reference example.
In step 4 of the reference example, the mask 600 is removed from the electrostatic chuck 500.
Next, a method of regenerating the electrostatic chuck 100 according to an embodiment will be described while comparing with a method of regenerating the electrostatic chuck 500 according to a reference example.
According to the method for regenerating the electrostatic chuck 100 according to one embodiment, the surface having undergone deterioration can be removed, and thus the suction performance of the electrostatic chuck 100 can be recovered.
Here, as shown in (e) of fig. 2 and (g) of fig. 3, compared with the reference example, according to the method for regenerating the electrostatic chuck 100 according to the embodiment, the processing amount in the height direction of the electrostatic chuck 100 can be reduced. This can shorten the processing time. In addition, the method for regenerating the electrostatic chuck 100 according to the embodiment can leave a large amount of machining allowance on the electrostatic chuck 100 side, as compared with the reference example, and thus can increase the number of regenerations of the electrostatic chuck 100. Thus, the lifetime of the electrostatic chuck 100 can be prolonged.
In addition, in the method for regenerating the electrostatic chuck 100 according to the embodiment, the mask forming operation can be easily performed as compared with the case where the mask is accurately formed at the positions of the conventional rib 110 and the conventional convex portion 140. That is, in step 1, the mask material is filled into the concave portion 120 and cured, whereby the operation of forming the mask at the position other than the convex portion 140 can be easily performed. In step 4, since the 2 nd mask 300 is formed at a position on the bottom surface 130 different from the position where the convex portion 140 (convex portion trace 141) is provided, strict alignment is not required.
In the method for regenerating the electrostatic chuck 100 according to the embodiment, the protruding trace 142 remains on the new bottom surface 132. However, when the substrate is attracted by the electrostatic chuck 100, the influence of the ribs 112 and the protrusions 145 is mainly small, and the influence of the presence or absence of the irregularities on the bottom surface 132 is small. Therefore, even if the convex portion mark 142 remains, the suction performance of the electrostatic chuck 100 can be ensured.
The timing of performing the process by the method for regenerating the electrostatic chuck 100 according to the embodiment may be determined based on, for example, the operating time (for example, the high-frequency application time) of the plasma processing apparatus. Further, the determination may be made based on a maintenance period of the plasma processing apparatus.
A through hole, not shown, is provided in the bottom surface 130 of the electrostatic chuck 100. A pin that moves up and down is disposed in the through hole. By lifting the pins, the substrate placed on the substrate placement surface of the electrostatic chuck 100 can be lifted. Further, by lowering the pins, the substrate supported by the pins can be placed on the substrate placement surface of the electrostatic chuck 100. Here, when the surface of the substrate mounting surface gradually deteriorates with time due to a process gas or the like, there is a concern that the attraction force between the substrate and the electrostatic chuck gradually increases. In this case, the driving torque value of the pins is gradually increased when the pins are lifted up by lifting the pins after the substrate processing. Therefore, the timing of performing the regeneration process on the electrostatic chuck can be determined based on the driving torque value of the pin.
The preferred embodiments of the present disclosure have been described in detail above. However, the present disclosure is not limited to the above-described embodiments. The above-described embodiments can be applied to various modifications, substitutions, and the like without departing from the scope of the present disclosure. Further, the features described above can be combined without technical contradiction.
The electrostatic chuck 100 used in the regeneration method of the present disclosure is described as the electrostatic chuck 100 having the annular rib 110 at the outer peripheral edge portion of the substrate mounting surface, but is not limited thereto. The ribs 110 may be formed on the substrate mounting surface of the electrostatic chuck 100.
That is, the electrostatic chuck according to another embodiment has a substrate mounting surface formed on the upper surface of the base 150. A convex portion 140 and a concave portion 120 having a bottom surface 130 are formed on the substrate mounting surface. The boss 140 is integrally formed with the base 150. The base 150 and the convex portion 140 are formed of a dielectric material such as alumina ceramic, for example. The concave portion 120 is an inner space recessed from the convex portion 140 on the substrate mounting surface. Further, the recess 120 has a bottom surface 130. The convex portion 140 is a columnar portion erected from the bottom surface 130.
In the electrostatic chuck according to another embodiment, the electrostatic chuck according to another embodiment can be regenerated in the same manner as the regeneration method of the electrostatic chuck 100 according to one embodiment shown in fig. 1 and 2.
In step 1, a 1 st mask 200 covering the concave portion 120 except the convex portion 140 is formed on the upper surface (substrate mounting surface) of the electrostatic chuck according to another embodiment. For example, the 1 st mask 200 covering the bottom surface 130 of the recess 120 is formed by filling the recess 120 with a mask material. At this time, the upper surface of the convex portion 140 is exposed from the 1 st mask 200. In addition, when the mask material is coated on the bottom surface 130, the mask material may overflow to the side of the electrostatic chuck according to another embodiment.
In step 6, the 2 nd mask 300 is removed from the electrostatic chuck according to another embodiment. At this time, the upper surface of the new convex portion 145 is polished.
Other aspects are the same as the method of regenerating the electrostatic chuck 100 according to the embodiment, and repetitive description thereof will be omitted.
In this way, in the electrostatic chuck having no rib, the adsorption performance can be recovered in the same manner as in the method of regenerating the electrostatic chuck 100 according to the embodiment.
The plasma processing apparatus of the present disclosure can be applied to any of the types Capacitively Coupled Plasma (CCP, capacitively coupled plasma), inductively Coupled Plasma (ICP, inductively coupled plasma), radial Line Slot Antenna (RLSA, radial line slot antenna), electron Cyclotron Resonance Plasma (ECR, electron cyclotron resonance plasma), helicon Wave Plasma (HWP, helicon plasma).
In addition, although the case where the removal process is used in the 2 nd and 5 th steps has been described, the method of removing the portion not covered by the masks 200 and 300 is not limited to this, and other methods may be used. For example, plasma etching or the like may be used.
Claims (9)
1. A regeneration method of an electrostatic chuck, wherein,
the regeneration method of the electrostatic chuck comprises the following steps:
providing the electrostatic chuck having a recess and a protrusion protruding from a bottom surface of the recess;
forming a 1 st mask covering the concave portions except the convex portions;
removing the surface of the electrostatic chuck by means of the 1 st mask;
removing the 1 st mask;
forming a 2 nd mask at a position of the bottom surface different from a position of the convex portion;
removing the surface of the electrostatic chuck by means of the 2 nd mask; and
and removing the 2 nd mask.
2. The method for recycling an electrostatic chuck according to claim 1, wherein,
in the step of removing the surface of the electrostatic chuck by means of the 1 st mask,
and cutting off the convex part.
3. The method for regenerating an electrostatic chuck according to claim 1 or 2, wherein,
in the step of removing the surface of the electrostatic chuck by means of the 2 nd mask,
and forming new convex parts at the positions where the 2 nd mask is formed.
4. The method for recycling an electrostatic chuck according to claim 3, wherein,
in the step of removing the 2 nd mask,
and grinding the upper surface of the new convex part.
5. The method for regenerating an electrostatic chuck according to claim 1 or 2, wherein,
the electrostatic chuck provided in the step of providing the electrostatic chuck has a rib as an annular portion provided at an outer peripheral edge portion of a substrate mounting surface of the electrostatic chuck,
in the step of forming the 1 st mask, the 1 st mask is formed, and the 1 st mask covers the ribs and the concave portions except for the convex portions.
6. The method for recycling an electrostatic chuck according to claim 5, wherein,
in the step of removing the 2 nd mask,
grinding the new upper surface of the convex part and the upper surface of the rib.
7. The method for regenerating an electrostatic chuck according to claim 1 or 2, wherein,
in the step of removing the surface of the electrostatic chuck,
sand blasting is used.
8. The method for regenerating an electrostatic chuck according to claim 1 or 2, wherein,
the timing of performing the regeneration process is determined based on the operating time of a plasma processing apparatus in which the electrostatic chuck is disposed, the maintenance period of the plasma processing apparatus, and the driving torque value of a pin that moves up and down in a through hole penetrating the electrostatic chuck.
9. An electrostatic chuck, wherein,
the electrostatic chuck is regenerated by the method for regenerating an electrostatic chuck according to any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410317883.2A CN118098923A (en) | 2018-10-11 | 2019-10-10 | Method for regenerating electrostatic chuck |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018192771A JP7134826B2 (en) | 2018-10-11 | 2018-10-11 | Electrostatic chuck production method |
| JP2018-192771 | 2018-10-11 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410317883.2A Division CN118098923A (en) | 2018-10-11 | 2019-10-10 | Method for regenerating electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111048387A CN111048387A (en) | 2020-04-21 |
| CN111048387B true CN111048387B (en) | 2024-04-05 |
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410317883.2A Pending CN118098923A (en) | 2018-10-11 | 2019-10-10 | Method for regenerating electrostatic chuck |
| CN201910956853.5A Active CN111048387B (en) | 2018-10-11 | 2019-10-10 | Method for regenerating electrostatic chuck and electrostatic chuck |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410317883.2A Pending CN118098923A (en) | 2018-10-11 | 2019-10-10 | Method for regenerating electrostatic chuck |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7134826B2 (en) |
| KR (2) | KR102526987B1 (en) |
| CN (2) | CN118098923A (en) |
| TW (1) | TWI827692B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20240097969A (en) | 2021-11-18 | 2024-06-27 | 도쿄엘렉트론가부시키가이샤 | Substrate holding method and substrate processing device |
| WO2024137314A1 (en) * | 2022-12-20 | 2024-06-27 | Lam Research Corporation | Treating an electrostatic chuck pedestal |
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| CN101546724A (en) * | 2008-03-28 | 2009-09-30 | 东京毅力科创株式会社 | Electrostatic chuck and manufacturing method thereof |
| JP2012156344A (en) * | 2011-01-27 | 2012-08-16 | Disco Abrasive Syst Ltd | Device and method for removing annular convex portion |
| JP2013162084A (en) * | 2012-02-08 | 2013-08-19 | Ulvac Japan Ltd | Electrostatic chuck regenerating method |
| CN103493194A (en) * | 2011-06-02 | 2014-01-01 | 应用材料公司 | Electrostatic chuck aln dielectric repair |
| CN106663653A (en) * | 2014-09-30 | 2017-05-10 | 住友大阪水泥股份有限公司 | Electrostatic chuck device |
| CN107208261A (en) * | 2015-02-06 | 2017-09-26 | 应用材料公司 | Radially outer pad for electrostatic chuck surface is designed |
| JP2018014515A (en) * | 2017-09-07 | 2018-01-25 | 松田産業株式会社 | Electrostatic chuck and manufacturing method therefor, and generation method for electrostatic chuck |
| CN108461397A (en) * | 2017-02-17 | 2018-08-28 | 株式会社迪思科 | Plasma etching method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3073521B1 (en) * | 2013-11-22 | 2022-04-20 | Kyocera Corporation | Electrostatic chuck |
| JP2018006573A (en) | 2016-07-01 | 2018-01-11 | 松田産業株式会社 | Electrostatic chuck, manufacturing method thereof and reproduction method for electrostatic chuck |
-
2018
- 2018-10-11 JP JP2018192771A patent/JP7134826B2/en active Active
-
2019
- 2019-10-02 TW TW108135685A patent/TWI827692B/en active
- 2019-10-02 KR KR1020190122306A patent/KR102526987B1/en active IP Right Grant
- 2019-10-10 CN CN202410317883.2A patent/CN118098923A/en active Pending
- 2019-10-10 CN CN201910956853.5A patent/CN111048387B/en active Active
-
2023
- 2023-04-25 KR KR1020230053806A patent/KR20230062796A/en not_active Application Discontinuation
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101546724A (en) * | 2008-03-28 | 2009-09-30 | 东京毅力科创株式会社 | Electrostatic chuck and manufacturing method thereof |
| JP2012156344A (en) * | 2011-01-27 | 2012-08-16 | Disco Abrasive Syst Ltd | Device and method for removing annular convex portion |
| CN103493194A (en) * | 2011-06-02 | 2014-01-01 | 应用材料公司 | Electrostatic chuck aln dielectric repair |
| JP2013162084A (en) * | 2012-02-08 | 2013-08-19 | Ulvac Japan Ltd | Electrostatic chuck regenerating method |
| CN106663653A (en) * | 2014-09-30 | 2017-05-10 | 住友大阪水泥股份有限公司 | Electrostatic chuck device |
| CN107208261A (en) * | 2015-02-06 | 2017-09-26 | 应用材料公司 | Radially outer pad for electrostatic chuck surface is designed |
| CN108461397A (en) * | 2017-02-17 | 2018-08-28 | 株式会社迪思科 | Plasma etching method |
| JP2018014515A (en) * | 2017-09-07 | 2018-01-25 | 松田産業株式会社 | Electrostatic chuck and manufacturing method therefor, and generation method for electrostatic chuck |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102526987B1 (en) | 2023-04-28 |
| CN111048387A (en) | 2020-04-21 |
| TWI827692B (en) | 2024-01-01 |
| KR20230062796A (en) | 2023-05-09 |
| JP7134826B2 (en) | 2022-09-12 |
| TW202027211A (en) | 2020-07-16 |
| KR20200041259A (en) | 2020-04-21 |
| JP2020061489A (en) | 2020-04-16 |
| CN118098923A (en) | 2024-05-28 |
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