KR20030000488A - Polishing pad of semiconductor device - Google Patents

Abstract

PURPOSE: A polishing pad of semiconductor devices is provided to improve polishing uniformity by using a hard pad spaced adjacent from a soft pad. CONSTITUTION: In the polishing pad of semiconductor devices, a hard pad(33) is attached to a soft pad(31), wherein the hard pad(33) is spaced adjacent from the soft pad(31). At this time, the size of the hard pad(33) is 1-10 millimeter. Also, the spaced distance of the hard pad(33) is 1-10 millimeter. Preferably, the hard pad(33) has diversiform, such as circularity or quadrate.

Description

Polishing pad of semiconductor device

The present invention relates to a polishing pad of a semiconductor device, and more particularly to a polishing pad of a semiconductor device that satisfies both the step removal and uniformity in the chemical mechanical polishing process.

As semiconductor devices have been highly integrated, the generation of steps in the device formation process has increased, making the photolithography process even more difficult. That is why the importance of the planarization process is increasing day by day.

The chemical mechanical polishing (CMP) process, which has recently been in the spotlight, may be a suitable process. However, since the surface of the wafer is directly etched by physical friction, particles are generated and fine. There was a problem protecting the pattern. In particular, there are many difficulties in ensuring the uniformity of the film quality etching on the wafer.

In the CMP process, which is one of the planarization methods of the semiconductor thin film, the most damaging portion of the etching uniformity is a phenomenon in which the edge of the wafer is excessively polished. As described above, the phenomenon in which the edge of the wafer is excessively polished has occurred 50% and as much as 100% compared to the original etching surface.

Hereinafter, with reference to the accompanying drawings will be described in detail.

FIG. 1 is a view showing a CMP process using a soft pad, which shows that the polishing target film 13 having a step is CMP using the soft pad 11. In this case, the soft pads 11 differently contact portions of the high and low portions of the film 13 to be polished differently. (See Figure 1)

FIG. 2 is a diagram illustrating a chemical mechanical polishing process using a hard pad, showing that the polishing target film 23 having a step is CMP using the hard pad 21. (See Figure 2)

The polishing pad of the semiconductor device according to the prior art as described above is uniformly polished because the parts of the film to be polished are different when the CMP process is performed using the soft pad, but it is difficult to remove the steps. When the CMP process is performed, it is easy to remove the step, but since it is difficult to uniformly polish, the difference in height between the film to be polished is reduced, as shown in the ⓧ and ⓨ parts of FIG. 2, thereby lowering the reliability of the film to be polished. There is a problem that makes it difficult.

SUMMARY OF THE INVENTION In order to solve the above problems of the prior art, an object of the present invention is to provide a polishing pad of a semiconductor device which can be polished easily and uniformly by attaching a hard pad piece to a soft pad to remove the step of the polishing target film. .

1 is a diagram illustrating a chemical mechanical polishing process using a soft pad.

2 is a view showing a chemical mechanical polishing process using a hard pad.

3 is a view showing a polishing pad of a semiconductor device according to the present invention.

<Description of Symbols for Major Parts of Drawings>

11, 31: soft pads 13, 23: polishing target film

21, 33: hard pad

In order to achieve the above object, the polishing pad of a semiconductor device according to the present invention,

In a polishing pad of a semiconductor device,

It is characterized in that the hard pad pieces are attached to the soft pad spaced at a predetermined interval.

Hereinafter, with reference to the accompanying drawings will be described in detail according to the present invention.

3 is a view illustrating a polishing pad of a semiconductor device according to the present invention, in which a hard pad 33 is attached to the soft pad 31 at regular intervals. In this case, the hard pads 33 are 1 to 10 mm in size and are spaced apart by 1 to 10 mm. In addition, the hard pad 33 may have various shapes such as a circle and a rectangle. (See Figure 3)

As described above, in the polishing pad of the semiconductor device according to the present invention, the hard pads are attached to the soft pads at regular intervals to facilitate step removal during the CMP process, and to improve polishing uniformity after the CMP process, thereby improving reliability of the film to be polished. There is an advantage to improving and facilitating subsequent processes.

Claims (3)

In a polishing pad of a semiconductor device, A polishing pad of a semiconductor device to which a piece of hard pad is attached to a soft pad at regular intervals. The method of claim 1, The hard pad piece is a polishing pad of a semiconductor device, characterized in that formed in the size of 1 ~ 10mm. The method of claim 1, The hard pad piece is attached to the polishing pad of the semiconductor device, characterized in that spaced apart by 1 to 10mm.