CN111029261A - 一种生物识别模块及其制备方法 - Google Patents
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Abstract
本发明涉及一种生物识别模块及其制备方法，其方法包括：提供具有相对的第一表面以及第二表面的衬底，在所述衬底的第一表面上形成第一介质层以及导电布线层；在所述第一介质层中形成一开槽区，接着在所述开槽区中嵌入一弹性缓冲层；提供一载板，在所述载板上设置离型膜以及生物识别芯片，通过光刻工艺在所述生物识别芯片的焊盘的四周形成金属挡墙结构，在所述导电布线层中与所述焊盘对应的区域设置焊球，接着将所述生物识别芯片设置于所述导电布线层上，使得所述弹性缓冲层接触所述生物识别芯片，并通过回流焊工艺使得焊球融化进而嵌入到相应的所述金属挡墙结构中；在所述衬底上形成塑封层并在其中形成导电柱；最后减薄所述衬底。
Description
技术领域
本发明涉及半导体封装领域，特别是涉及一种生物识别模块及其制备方法。
背景技术
在现有的生物识别模块中，通常是在生物识别芯片上形成硬质的封装材料层，然后减薄该封装材料层，然后在减薄后的封装材料层上设置保护盖板。现有的生物识别模块在使用过程中，由于长期多次的按压该生物识别模块，在按压力的作用下容易损坏生物识别芯片的功能区。
发明内容
本发明的目的是克服上述现有技术的不足，提供一种生物识别模块及其制备方法。
为实现上述目的，本发明采用的技术方案是：
一种生物识别模块的制备方法，包括以下步骤：1)提供一衬底，所述衬底具有相对的第一表面以及第二表面；2)在所述衬底的第一表面上形成第一介质层，在所述第一介质层上形成导电布线层；3)所述第一介质层中与生物识别芯片的竖直方向对应区域的介质材料被去除，进而形成一开槽区，接着在所述开槽区中嵌入一弹性缓冲层；4)提供一载板，在所述载板上设置一离型膜，在所述离型膜上设置生物识别芯片，所述生物识别芯片的正面设置有功能区以及焊盘；5)在所述载板上形成光刻胶层以覆盖所述生物识别芯片，通过光刻工艺在所述生物识别芯片的所述焊盘的四周形成环形沟槽；6)在所述环形沟槽中填充金属材料以形成金属挡墙结构，并去除所述光刻胶层；7)在所述导电布线层中与所述焊盘对应的区域设置焊球，接着将所述生物识别芯片设置于所述导电布线层上，使得所述弹性缓冲层接触所述生物识别芯片，并通过回流焊工艺使得焊球融化进而嵌入到相应的所述金属挡墙结构中；8)将所述离型膜以及所述载板与所述生物识别芯片分离，接着在所述衬底上形成塑封层，所述塑封层完全包覆所述生物识别芯片以及所述导电布线层；9)利用掩膜对所述塑封层进行开口，以暴露部分的所述导电布线层，并在所述开口内形成导电柱；10)自所述衬底的第二表面减薄所述衬底。
进一步的，在所述步骤1)中，所属衬底的材质为玻璃、陶瓷、塑料或者硅。
进一步的，在所述步骤2)中，所述第一介质层的材料为氮化硅、氮氧化硅、氧化硅、碳化硅、氧化铝、氮化铝中的一种或多种，所述导电布线层的材质为金、银、铜、铝、钛、镍、钯中的一种或多种。
进一步的，在所述步骤3)中，所述弹性缓冲层的材质为天然橡胶、丁苯橡胶、丁腈橡胶、硅橡胶、热塑性聚氨酯弹性体、苯乙烯系热塑性弹性体、三元乙丙橡胶中的一种，所述弹性缓冲层的厚度为800-1600微米。
进一步的，在所述步骤6)中，所述金属挡墙结构的金属材料为金、银、铜、铝、钛、镍、钯中的一种或多种。
进一步的，在所述步骤8)中，所述塑封层的材料为环氧树脂。
进一步的，在所述步骤9)中，所述导电柱的材料为焊料、金、银、铜、铝、钛、镍、钯中的一种或多种。
进一步的，在所述步骤10)中，减薄后的衬底的厚度为所述100-300微米。
本发明还提出一种生物识别模块，其采用上述方法制备形成的。
本发明与现有技术相比具有下列优点：
在本发明的生物识别模块的制备方法中，通过在衬底的第一表面上设置弹性缓冲层，进而将所述生物识别芯片设置在弹性缓冲层上，该生物识别模块在使用过程中，弹性缓冲层的存在可以确保其在多次按压情况下生物识别芯片也不会损坏。通过在生物识别芯片的焊盘的四周形成金属挡墙结构，进而在回流焊工艺使得焊球融化进而嵌入到相应的所述金属挡墙结构中，确保了生物识别芯片与衬底精确对位，且有效避免焊料溢出而损坏生物识别芯片的功能区。通过减薄所述衬底，并进一步优化减薄后的衬底的厚度，可以确保该生物识别模块工作灵敏。
附图说明
图1-图9为本发明的生物识别模块的制备过程中各步骤的结构示意图。
具体实施方式
如图1-图9所示，一种生物识别模块的制备方法，包括以下步骤：
如图1所示，在步骤1)中，提供一衬底101，所述衬底具有相对的第一表面以及第二表面；在步骤2)在所述衬底101的第一表面上形成第一介质层102，在所述第一介质层102上形成导电布线层103。
其中，所述衬底101的材质为玻璃、陶瓷、塑料或者硅。所述第一介质层102的材料为氮化硅、氮氧化硅、氧化硅、碳化硅、氧化铝、氮化铝中的一种或多种，所述第一介质层102可以为单层或多层结构，所述第一介质层102的制备方法为PECVD法、ALD法或热氧化法，所述导电布线层103的材质为金、银、铜、铝、钛、镍、钯中的一种或多种。所述导电布线层103的制备方法为CVD、热蒸镀、磁控溅射、电镀、化学镀以及电子束蒸镀中的一种。
如图2所示，在步骤3)中，所述第一介质层102中与生物识别芯片的竖直方向对应区域的介质材料被去除，进而形成一开槽区1021，接着在所述开槽区1021中嵌入一弹性缓冲层104。
其中，所述弹性缓冲层104的材质为天然橡胶、丁苯橡胶、丁腈橡胶、硅橡胶、热塑性聚氨酯弹性体、苯乙烯系热塑性弹性体、三元乙丙橡胶中的一种，所述弹性缓冲层104的厚度为800-1600微米，更为优选的所述弹性缓冲层104的厚度为1000-1300微米。所述弹性缓冲层104通过粘结剂粘附在所述开槽区1021内。
如图3所示，在步骤4)中，提供一载板201，在所述载板201上设置一离型膜202，在所述离型膜202上设置生物识别芯片203，所述生物识别芯片203的正面设置有功能区204以及焊盘205。
其中，所述载板201的材质为玻璃、硅、锗、陶瓷中的一种，所述离型膜202在激光照射下会失去粘性，进而方便生物识别芯片203与载板201的分离。
如图4所示，在步骤5)中，在所述载板201上形成光刻胶层301以覆盖所述生物识别芯片203，通过光刻工艺在所述生物识别芯片203的所述焊盘205的四周形成环形沟槽302。
如图5所示，在步骤6)中，在所述环形沟槽302中填充金属材料以形成金属挡墙结构401，并去除所述光刻胶层301。所述金属挡墙结构401的金属材料为金、银、铜、铝、钛、镍、钯中的一种或多种，所述金属挡墙结构401的制备方法为CVD、热蒸镀、磁控溅射、电镀、化学镀以及电子束蒸镀中的一种。
如图6所示，在步骤7)中，在所述导电布线层103中与所述焊盘205对应的区域设置焊球501，接着将所述生物识别芯片203设置于所述导电布线层103上，使得所述弹性缓冲层104接触所述生物识别芯片203，并通过回流焊工艺使得焊球501融化进而嵌入到相应的所述金属挡墙结构401中。
如图7所示，在步骤8)将所述离型膜202以及所述载板201与所述生物识别芯片203分离，接着在所述衬底上形成塑封层601，所述塑封层601完全包覆所述生物识别芯片203以及所述导电布线层103，所述塑封层601的材料为环氧树脂。
如图8所示，在步骤9)中，利用掩膜对所述塑封层进行开口，以暴露部分的所述导电布线层103，并在所述开口内形成导电柱701，所述导电柱的材料为焊料、金、银、铜、铝、钛、镍、钯中的一种或多种。
如图9所示，在步骤10)中，自所述衬底101的第二表面减薄所述衬底101，减薄后的衬底101的厚度为所述100-300微米。
本发明还公开一种利用上述方法制备的生物识别模块。
如上所述，本发明的生物识别模块及其制备方法与现有技术相比具有下列优点：
在本发明的生物识别模块的制备方法中，通过在衬底的第一表面上设置弹性缓冲层，进而将所述生物识别芯片设置在弹性缓冲层上，该生物识别模块在使用过程中，弹性缓冲层的存在可以确保其在多次按压情况下生物识别芯片也不会损坏。通过在生物识别芯片的焊盘的四周形成金属挡墙结构，进而在回流焊工艺使得焊球融化进而嵌入到相应的所述金属挡墙结构中，确保了生物识别芯片与衬底精确对位，且有效避免焊料溢出而损坏生物识别芯片的功能区。通过减薄所述衬底，并进一步优化减薄后的衬底的厚度，可以确保该生物识别模块工作灵敏。
以上所述是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本发明的保护范围。
Claims (9)
1.一种生物识别模块的制备方法，其特征在于：包括以下步骤：
1)提供一衬底，所述衬底具有相对的第一表面以及第二表面；
2)在所述衬底的第一表面上形成第一介质层，在所述第一介质层上形成导电布线层；
3)所述第一介质层中与生物识别芯片的竖直方向对应区域的介质材料被去除，进而形成一开槽区，接着在所述开槽区中嵌入一弹性缓冲层；
4)提供一载板，在所述载板上设置一离型膜，在所述离型膜上设置生物识别芯片，所述生物识别芯片的正面设置有功能区以及焊盘；
5)在所述载板上形成光刻胶层以覆盖所述生物识别芯片，通过光刻工艺在所述生物识别芯片的所述焊盘的四周形成环形沟槽；
6)在所述环形沟槽中填充金属材料以形成金属挡墙结构，并去除所述光刻胶层；
7)在所述导电布线层中与所述焊盘对应的区域设置焊球，接着将所述生物识别芯片设置于所述导电布线层上，使得所述弹性缓冲层接触所述生物识别芯片，并通过回流焊工艺使得焊球融化进而嵌入到相应的所述金属挡墙结构中；
8)将所述离型膜以及所述载板与所述生物识别芯片分离，接着在所述衬底上形成塑封层，所述塑封层完全包覆所述生物识别芯片以及所述导电布线层；
9)利用掩膜对所述塑封层进行开口，以暴露部分的所述导电布线层，并在所述开口内形成导电柱；
10)自所述衬底的第二表面减薄所述衬底。
2.根据权利要求1所述的生物识别模块的制备方法，其特征在于：在所述步骤1)中，所属衬底的材质为玻璃、陶瓷、塑料或者硅。
3.根据权利要求1所述的生物识别模块的制备方法，其特征在于：在所述步骤2)中，所述第一介质层的材料为氮化硅、氮氧化硅、氧化硅、碳化硅、氧化铝、氮化铝中的一种或多种，所述导电布线层的材质为金、银、铜、铝、钛、镍、钯中的一种或多种。
4.根据权利要求1所述的生物识别模块的制备方法，其特征在于：在所述步骤3)中，所述弹性缓冲层的材质为天然橡胶、丁苯橡胶、丁腈橡胶、硅橡胶、热塑性聚氨酯弹性体、苯乙烯系热塑性弹性体、三元乙丙橡胶中的一种，所述弹性缓冲层的厚度为800-1600微米。
5.根据权利要求1所述的生物识别模块的制备方法，其特征在于：在所述步骤6)中，所述金属挡墙结构的金属材料为金、银、铜、铝、钛、镍、钯中的一种或多种。
6.根据权利要求1所述的生物识别模块的制备方法，其特征在于：在所述步骤8)中，所述塑封层的材料为环氧树脂。
7.根据权利要求1所述的生物识别模块的制备方法，其特征在于：在所述步骤9)中，所述导电柱的材料为焊料、金、银、铜、铝、钛、镍、钯中的一种或多种。
8.根据权利要求1所述的生物识别模块的制备方法，其特征在于：在所述步骤10)中，减薄后的衬底的厚度为所述100-300微米。
9.一种生物识别模块，其特征在于，采用权利要求1-8任一项所述的方法制备形成的。
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111785708A (zh) * | 2020-07-17 | 2020-10-16 | 厦门乾照半导体科技有限公司 | 一种发光基板及其制作方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101308802A (zh) * | 2007-05-15 | 2008-11-19 | 矽品精密工业股份有限公司 | 感测式半导体装置及其制法 |
| CN203895460U (zh) * | 2014-05-20 | 2014-10-22 | 苏州晶方半导体科技股份有限公司 | 一种封装结构 |
| US20170110416A1 (en) * | 2015-10-15 | 2017-04-20 | Powertech Technology Inc. | Chip package having a protection piece compliantly attached on a chip sensing surface |
| CN106816417A (zh) * | 2017-01-13 | 2017-06-09 | 南京大学 | 一种高密度封装及其制造方法 |
| CN107146779A (zh) * | 2017-06-30 | 2017-09-08 | 中芯长电半导体（江阴）有限公司 | 指纹识别芯片的封装结构及封装方法 |
| TW201826473A (zh) * | 2017-01-03 | 2018-07-16 | 力成科技股份有限公司 | 封裝結構及其製造方法 |
| CN110472547A (zh) * | 2019-08-07 | 2019-11-19 | 上海天马有机发光显示技术有限公司 | 一种显示模组和显示装置 |
-
2019
- 2019-11-22 CN CN201911159460.8A patent/CN111029261B/zh active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101308802A (zh) * | 2007-05-15 | 2008-11-19 | 矽品精密工业股份有限公司 | 感测式半导体装置及其制法 |
| CN203895460U (zh) * | 2014-05-20 | 2014-10-22 | 苏州晶方半导体科技股份有限公司 | 一种封装结构 |
| US20170110416A1 (en) * | 2015-10-15 | 2017-04-20 | Powertech Technology Inc. | Chip package having a protection piece compliantly attached on a chip sensing surface |
| TW201826473A (zh) * | 2017-01-03 | 2018-07-16 | 力成科技股份有限公司 | 封裝結構及其製造方法 |
| CN106816417A (zh) * | 2017-01-13 | 2017-06-09 | 南京大学 | 一种高密度封装及其制造方法 |
| CN107146779A (zh) * | 2017-06-30 | 2017-09-08 | 中芯长电半导体（江阴）有限公司 | 指纹识别芯片的封装结构及封装方法 |
| CN110472547A (zh) * | 2019-08-07 | 2019-11-19 | 上海天马有机发光显示技术有限公司 | 一种显示模组和显示装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111785708A (zh) * | 2020-07-17 | 2020-10-16 | 厦门乾照半导体科技有限公司 | 一种发光基板及其制作方法 |
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