CN110995169B - 一种片上可变增益温度补偿放大器 - Google Patents
一种片上可变增益温度补偿放大器 Download PDFInfo
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- CN110995169B CN110995169B CN201911199487.XA CN201911199487A CN110995169B CN 110995169 B CN110995169 B CN 110995169B CN 201911199487 A CN201911199487 A CN 201911199487A CN 110995169 B CN110995169 B CN 110995169B
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- 230000008859 change Effects 0.000 claims abstract description 11
- 230000000694 effects Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Control Of Electrical Variables (AREA)
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911199487.XA CN110995169B (zh) | 2019-11-29 | 2019-11-29 | 一种片上可变增益温度补偿放大器 |
JP2021543263A JP2022518543A (ja) | 2019-11-29 | 2020-04-09 | オンチップ可変利得温度補償増幅器 |
PCT/CN2020/084009 WO2020228456A1 (zh) | 2019-11-29 | 2020-04-09 | 一种片上可变增益温度补偿放大器 |
Applications Claiming Priority (1)
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CN201911199487.XA CN110995169B (zh) | 2019-11-29 | 2019-11-29 | 一种片上可变增益温度补偿放大器 |
Publications (2)
Publication Number | Publication Date |
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CN110995169A CN110995169A (zh) | 2020-04-10 |
CN110995169B true CN110995169B (zh) | 2021-08-06 |
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CN201911199487.XA Active CN110995169B (zh) | 2019-11-29 | 2019-11-29 | 一种片上可变增益温度补偿放大器 |
Country Status (3)
Country | Link |
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JP (1) | JP2022518543A (zh) |
CN (1) | CN110995169B (zh) |
WO (1) | WO2020228456A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112039444B (zh) * | 2020-11-04 | 2021-02-19 | 成都铱通科技有限公司 | 一种提升正温度系数变化范围的增益放大器 |
CN112583365B (zh) * | 2020-12-11 | 2023-05-12 | 重庆西南集成电路设计有限责任公司 | 带温度补偿及自动衰减功能的位敏跨阻放大器 |
CN113346846B (zh) * | 2021-06-18 | 2023-03-24 | 中国电子科技集团公司第二十四研究所 | 基于硅基bjt工艺的射频差分放大器及其增益温度稳定性的提升方法 |
CN113922770B (zh) * | 2021-12-14 | 2022-03-04 | 深圳市时代速信科技有限公司 | 一种偏置控制电路及电子设备 |
CN117335763B (zh) * | 2023-12-01 | 2024-05-24 | 厦门科塔电子有限公司 | 一种增益自适应温度调控电路 |
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CN106487401A (zh) * | 2016-10-12 | 2017-03-08 | 武汉大学 | 一种基于超外差原理的ais接收机 |
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US10056874B1 (en) * | 2017-02-28 | 2018-08-21 | Psemi Corporation | Power amplifier self-heating compensation circuit |
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JP2004328515A (ja) * | 2003-04-25 | 2004-11-18 | Tdk Corp | 可変利得回路及びこれに用いる制御信号生成回路 |
JP2007005995A (ja) * | 2005-06-22 | 2007-01-11 | Renesas Technology Corp | バイアス回路および高周波電力増幅回路 |
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JP2009253728A (ja) * | 2008-04-08 | 2009-10-29 | Panasonic Corp | 高周波電力増幅器 |
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CN104639051A (zh) * | 2013-11-13 | 2015-05-20 | 沈阳中科微电子有限公司 | 一种抑制温漂的功率放大器偏置电路 |
CN103905002B (zh) * | 2014-03-10 | 2016-08-03 | 东南大学 | 一种提升增益变化范围的低温度系数可变增益放大器 |
WO2016031306A1 (ja) * | 2014-08-28 | 2016-03-03 | 株式会社村田製作所 | バイアス制御回路及び電力増幅モジュール |
CN104935269B (zh) * | 2015-07-12 | 2017-11-21 | 北京理工大学 | 一种射频放大器增益的温度补偿方法和系统 |
CN107749745B (zh) * | 2017-11-03 | 2020-06-16 | 西安电子科技大学 | 可变增益放大器 |
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2019
- 2019-11-29 CN CN201911199487.XA patent/CN110995169B/zh active Active
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2020
- 2020-04-09 WO PCT/CN2020/084009 patent/WO2020228456A1/zh active Application Filing
- 2020-04-09 JP JP2021543263A patent/JP2022518543A/ja active Pending
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CN1697309A (zh) * | 2005-06-06 | 2005-11-16 | 电子科技大学 | 一种模拟温度补偿晶体振荡器 |
CN101106356A (zh) * | 2007-08-01 | 2008-01-16 | 锐迪科无线通信技术(上海)有限公司 | 功率放大器电路以及其初始化方法和功率放大方法 |
WO2011001195A1 (en) * | 2009-06-29 | 2011-01-06 | Nokia Corporation | Temperature compensated microphone |
JP2011254408A (ja) * | 2010-06-04 | 2011-12-15 | Renesas Electronics Corp | パワーアンプモジュール及び携帯情報端末 |
CN103051292A (zh) * | 2012-12-10 | 2013-04-17 | 广州润芯信息技术有限公司 | 射频发射机、其增益补偿电路及方法 |
CN106487401A (zh) * | 2016-10-12 | 2017-03-08 | 武汉大学 | 一种基于超外差原理的ais接收机 |
CN106788486A (zh) * | 2016-12-02 | 2017-05-31 | 华南理工大学 | 一种带温度补偿的发射机及其温度补偿方法 |
US10056874B1 (en) * | 2017-02-28 | 2018-08-21 | Psemi Corporation | Power amplifier self-heating compensation circuit |
CN108718189A (zh) * | 2018-07-19 | 2018-10-30 | 珠海格力电器股份有限公司 | 温度补偿电路及通讯电路 |
CN110391795A (zh) * | 2019-06-14 | 2019-10-29 | 浙江大学 | 一种片上模拟多波束移相合成器 |
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Title |
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Temperature-Compensated dB-linear Digitally Controlled Variable Gain Amplifier With DC Offset Cancellation;Thangarasu Bharatha Kumar;《IEEE Transactions on Microwave Theory and Techniques》;20130517;2648-2661 * |
一种具有温度补偿的宽带CMOS可变增益放大器;黄杏丽;《固体电子学研究与进展》;20130630;254-259 * |
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Publication number | Publication date |
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WO2020228456A1 (zh) | 2020-11-19 |
CN110995169A (zh) | 2020-04-10 |
JP2022518543A (ja) | 2022-03-15 |
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Inventor after: Xu Zhiwei Inventor after: Zhang Zijiang Inventor after: Li Nayu Inventor after: Li Min Inventor after: Wang Shaogang Inventor after: Gao Huiyan Inventor after: Song Chunyi Inventor before: Xu Zhiwei Inventor before: Zhang Zijiang Inventor before: Li Nayu Inventor before: Li Min Inventor before: Wang Shaogang Inventor before: Gao Huiyan |
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Effective date of registration: 20230331 Address after: 316000 Room 202, 11 Baichuan Road, Lincheng street, Dinghai District, Zhoushan City, Zhejiang Province (centralized office) Patentee after: ZHEJIANG JISU HEXIN TECHNOLOGY CO.,LTD. Address before: 310058 Yuhang Tang Road, Xihu District, Hangzhou, Zhejiang 866 Patentee before: ZHEJIANG University |
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Effective date of registration: 20230615 Address after: Plant 1, No. 13, Guiyang Avenue, Yantai Economic and Technological Development Zone, Shandong Province, 264000 Patentee after: Yantai Xin Yang Ju Array Microelectronics Co.,Ltd. Address before: 316000 Room 202, 11 Baichuan Road, Lincheng street, Dinghai District, Zhoushan City, Zhejiang Province (centralized office) Patentee before: ZHEJIANG JISU HEXIN TECHNOLOGY CO.,LTD. |