CN110995169A - 一种片上可变增益温度补偿放大器 - Google Patents
一种片上可变增益温度补偿放大器 Download PDFInfo
- Publication number
- CN110995169A CN110995169A CN201911199487.XA CN201911199487A CN110995169A CN 110995169 A CN110995169 A CN 110995169A CN 201911199487 A CN201911199487 A CN 201911199487A CN 110995169 A CN110995169 A CN 110995169A
- Authority
- CN
- China
- Prior art keywords
- transistor
- transistors
- resistor
- port
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Control Of Electrical Variables (AREA)
Abstract
Description
Claims (5)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911199487.XA CN110995169B (zh) | 2019-11-29 | 2019-11-29 | 一种片上可变增益温度补偿放大器 |
PCT/CN2020/084009 WO2020228456A1 (zh) | 2019-11-29 | 2020-04-09 | 一种片上可变增益温度补偿放大器 |
JP2021543263A JP2022518543A (ja) | 2019-11-29 | 2020-04-09 | オンチップ可変利得温度補償増幅器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911199487.XA CN110995169B (zh) | 2019-11-29 | 2019-11-29 | 一种片上可变增益温度补偿放大器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110995169A true CN110995169A (zh) | 2020-04-10 |
CN110995169B CN110995169B (zh) | 2021-08-06 |
Family
ID=70088227
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911199487.XA Active CN110995169B (zh) | 2019-11-29 | 2019-11-29 | 一种片上可变增益温度补偿放大器 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2022518543A (zh) |
CN (1) | CN110995169B (zh) |
WO (1) | WO2020228456A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112039444A (zh) * | 2020-11-04 | 2020-12-04 | 成都铱通科技有限公司 | 一种提升正温度系数变化范围的增益放大器 |
CN112583365A (zh) * | 2020-12-11 | 2021-03-30 | 重庆西南集成电路设计有限责任公司 | 带温度补偿及自动衰减功能的位敏跨阻放大器 |
CN113346846A (zh) * | 2021-06-18 | 2021-09-03 | 中国电子科技集团公司第二十四研究所 | 基于硅基bjt工艺的射频差分放大器及其增益温度稳定性的提升方法 |
CN113922770A (zh) * | 2021-12-14 | 2022-01-11 | 深圳市时代速信科技有限公司 | 一种偏置控制电路及电子设备 |
CN117335763A (zh) * | 2023-12-01 | 2024-01-02 | 厦门科塔电子有限公司 | 一种增益自适应温度调控电路 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1697309A (zh) * | 2005-06-06 | 2005-11-16 | 电子科技大学 | 一种模拟温度补偿晶体振荡器 |
CN101106356A (zh) * | 2007-08-01 | 2008-01-16 | 锐迪科无线通信技术(上海)有限公司 | 功率放大器电路以及其初始化方法和功率放大方法 |
WO2011001195A1 (en) * | 2009-06-29 | 2011-01-06 | Nokia Corporation | Temperature compensated microphone |
JP2011254408A (ja) * | 2010-06-04 | 2011-12-15 | Renesas Electronics Corp | パワーアンプモジュール及び携帯情報端末 |
CN103051292A (zh) * | 2012-12-10 | 2013-04-17 | 广州润芯信息技术有限公司 | 射频发射机、其增益补偿电路及方法 |
CN106487401A (zh) * | 2016-10-12 | 2017-03-08 | 武汉大学 | 一种基于超外差原理的ais接收机 |
CN106788486A (zh) * | 2016-12-02 | 2017-05-31 | 华南理工大学 | 一种带温度补偿的发射机及其温度补偿方法 |
CN107968407A (zh) * | 2017-12-30 | 2018-04-27 | 赵高琳 | 一种提高新能源发电电能质量的装置 |
US10056874B1 (en) * | 2017-02-28 | 2018-08-21 | Psemi Corporation | Power amplifier self-heating compensation circuit |
CN108718189A (zh) * | 2018-07-19 | 2018-10-30 | 珠海格力电器股份有限公司 | 温度补偿电路及通讯电路 |
CN109324655A (zh) * | 2018-11-15 | 2019-02-12 | 成都嘉纳海威科技有限责任公司 | 一种高精度指数型温度补偿cmos带隙基准电路 |
US20190207564A1 (en) * | 2017-12-30 | 2019-07-04 | Texas Instruments Incorporated | Negative capacitance circuits including temperature-compensation biasings |
CN110391795A (zh) * | 2019-06-14 | 2019-10-29 | 浙江大学 | 一种片上模拟多波束移相合成器 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004328515A (ja) * | 2003-04-25 | 2004-11-18 | Tdk Corp | 可変利得回路及びこれに用いる制御信号生成回路 |
JP2007005995A (ja) * | 2005-06-22 | 2007-01-11 | Renesas Technology Corp | バイアス回路および高周波電力増幅回路 |
JP4585461B2 (ja) * | 2006-01-30 | 2010-11-24 | 旭化成エレクトロニクス株式会社 | 増幅率可変増幅器 |
JP2009253728A (ja) * | 2008-04-08 | 2009-10-29 | Panasonic Corp | 高周波電力増幅器 |
CN202076989U (zh) * | 2011-06-24 | 2011-12-14 | 惠州市正源微电子有限公司 | 射频功率放大器温度补偿电路 |
US8779859B2 (en) * | 2012-08-08 | 2014-07-15 | Qualcomm Incorporated | Multi-cascode amplifier bias techniques |
CN104639051A (zh) * | 2013-11-13 | 2015-05-20 | 沈阳中科微电子有限公司 | 一种抑制温漂的功率放大器偏置电路 |
CN103905002B (zh) * | 2014-03-10 | 2016-08-03 | 东南大学 | 一种提升增益变化范围的低温度系数可变增益放大器 |
JP6094783B2 (ja) * | 2014-08-28 | 2017-03-15 | 株式会社村田製作所 | バイアス制御回路及び電力増幅モジュール |
CN104935269B (zh) * | 2015-07-12 | 2017-11-21 | 北京理工大学 | 一种射频放大器增益的温度补偿方法和系统 |
CN107749745B (zh) * | 2017-11-03 | 2020-06-16 | 西安电子科技大学 | 可变增益放大器 |
-
2019
- 2019-11-29 CN CN201911199487.XA patent/CN110995169B/zh active Active
-
2020
- 2020-04-09 WO PCT/CN2020/084009 patent/WO2020228456A1/zh active Application Filing
- 2020-04-09 JP JP2021543263A patent/JP2022518543A/ja active Pending
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1697309A (zh) * | 2005-06-06 | 2005-11-16 | 电子科技大学 | 一种模拟温度补偿晶体振荡器 |
CN101106356A (zh) * | 2007-08-01 | 2008-01-16 | 锐迪科无线通信技术(上海)有限公司 | 功率放大器电路以及其初始化方法和功率放大方法 |
WO2011001195A1 (en) * | 2009-06-29 | 2011-01-06 | Nokia Corporation | Temperature compensated microphone |
JP2011254408A (ja) * | 2010-06-04 | 2011-12-15 | Renesas Electronics Corp | パワーアンプモジュール及び携帯情報端末 |
CN103051292A (zh) * | 2012-12-10 | 2013-04-17 | 广州润芯信息技术有限公司 | 射频发射机、其增益补偿电路及方法 |
CN106487401A (zh) * | 2016-10-12 | 2017-03-08 | 武汉大学 | 一种基于超外差原理的ais接收机 |
CN106788486A (zh) * | 2016-12-02 | 2017-05-31 | 华南理工大学 | 一种带温度补偿的发射机及其温度补偿方法 |
US10056874B1 (en) * | 2017-02-28 | 2018-08-21 | Psemi Corporation | Power amplifier self-heating compensation circuit |
CN107968407A (zh) * | 2017-12-30 | 2018-04-27 | 赵高琳 | 一种提高新能源发电电能质量的装置 |
US20190207564A1 (en) * | 2017-12-30 | 2019-07-04 | Texas Instruments Incorporated | Negative capacitance circuits including temperature-compensation biasings |
CN108718189A (zh) * | 2018-07-19 | 2018-10-30 | 珠海格力电器股份有限公司 | 温度补偿电路及通讯电路 |
CN109324655A (zh) * | 2018-11-15 | 2019-02-12 | 成都嘉纳海威科技有限责任公司 | 一种高精度指数型温度补偿cmos带隙基准电路 |
CN110391795A (zh) * | 2019-06-14 | 2019-10-29 | 浙江大学 | 一种片上模拟多波束移相合成器 |
Non-Patent Citations (2)
Title |
---|
THANGARASU BHARATHA KUMAR: "Temperature-Compensated dB-linear Digitally Controlled Variable Gain Amplifier With DC Offset Cancellation", 《IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES》 * |
黄杏丽: "一种具有温度补偿的宽带CMOS可变增益放大器", 《固体电子学研究与进展》 * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112039444A (zh) * | 2020-11-04 | 2020-12-04 | 成都铱通科技有限公司 | 一种提升正温度系数变化范围的增益放大器 |
CN112039444B (zh) * | 2020-11-04 | 2021-02-19 | 成都铱通科技有限公司 | 一种提升正温度系数变化范围的增益放大器 |
CN112583365A (zh) * | 2020-12-11 | 2021-03-30 | 重庆西南集成电路设计有限责任公司 | 带温度补偿及自动衰减功能的位敏跨阻放大器 |
CN112583365B (zh) * | 2020-12-11 | 2023-05-12 | 重庆西南集成电路设计有限责任公司 | 带温度补偿及自动衰减功能的位敏跨阻放大器 |
CN113346846A (zh) * | 2021-06-18 | 2021-09-03 | 中国电子科技集团公司第二十四研究所 | 基于硅基bjt工艺的射频差分放大器及其增益温度稳定性的提升方法 |
CN113346846B (zh) * | 2021-06-18 | 2023-03-24 | 中国电子科技集团公司第二十四研究所 | 基于硅基bjt工艺的射频差分放大器及其增益温度稳定性的提升方法 |
CN113922770A (zh) * | 2021-12-14 | 2022-01-11 | 深圳市时代速信科技有限公司 | 一种偏置控制电路及电子设备 |
CN117335763A (zh) * | 2023-12-01 | 2024-01-02 | 厦门科塔电子有限公司 | 一种增益自适应温度调控电路 |
CN117335763B (zh) * | 2023-12-01 | 2024-05-24 | 厦门科塔电子有限公司 | 一种增益自适应温度调控电路 |
Also Published As
Publication number | Publication date |
---|---|
JP2022518543A (ja) | 2022-03-15 |
CN110995169B (zh) | 2021-08-06 |
WO2020228456A1 (zh) | 2020-11-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110995169B (zh) | 一种片上可变增益温度补偿放大器 | |
JP2002510888A (ja) | 広ダイナミックレンジの可変利得増幅器 | |
US8415940B2 (en) | Temperature compensation circuit and method for generating a voltage reference with a well-defined temperature behavior | |
CN107749745B (zh) | 可变增益放大器 | |
CN113381702B (zh) | 低噪声放大器、射频接收机及射频终端 | |
US5844443A (en) | Linear high-frequency amplifier with high input impedance and high power efficiency | |
CN109546981B (zh) | 差分输入电路及放大电路、显示装置 | |
EP0025977B1 (en) | Gain controlled amplifier | |
Bai et al. | A 35-dBm OIP3 CMOS constant bandwidth PGA with extended input range and improved common-mode rejection | |
CN111384906A (zh) | 功率放大电路 | |
US6486724B2 (en) | FET bias circuit | |
US10826438B2 (en) | Bias circuit | |
WO2005119905A2 (en) | Linearity enhanced amplifier | |
CN110739917A (zh) | 基于射频功率放大器的温度补偿电路 | |
CN109842389B (zh) | 一种射频功率放大器及其功率控制电路 | |
GB2272122A (en) | Wideband constant impedance amplifiers. | |
CN116232242A (zh) | Ab类输出级的偏置电路以及ab类放大器、芯片和电子设备 | |
CN113253791B (zh) | 电流镜布置 | |
US11245366B2 (en) | Distributed amplifiers with controllable linearization | |
GB2378068A (en) | A bipolar differential amplifier with a tail resistor | |
TWI699966B (zh) | 運算放大器 | |
TWI343177B (en) | Transconductance circuit | |
CN112558672A (zh) | 基准电流源及包含基准电流源的芯片 | |
US9998080B2 (en) | Low voltage supply amplifier | |
CN116865694B (zh) | 一种放大器温度补偿电路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Xu Zhiwei Inventor after: Zhang Zijiang Inventor after: Li Nayu Inventor after: Li Min Inventor after: Wang Shaogang Inventor after: Gao Huiyan Inventor after: Song Chunyi Inventor before: Xu Zhiwei Inventor before: Zhang Zijiang Inventor before: Li Nayu Inventor before: Li Min Inventor before: Wang Shaogang Inventor before: Gao Huiyan |
|
CB03 | Change of inventor or designer information | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230331 Address after: 316000 Room 202, 11 Baichuan Road, Lincheng street, Dinghai District, Zhoushan City, Zhejiang Province (centralized office) Patentee after: ZHEJIANG JISU HEXIN TECHNOLOGY CO.,LTD. Address before: 310058 Yuhang Tang Road, Xihu District, Hangzhou, Zhejiang 866 Patentee before: ZHEJIANG University |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230615 Address after: Plant 1, No. 13, Guiyang Avenue, Yantai Economic and Technological Development Zone, Shandong Province, 264000 Patentee after: Yantai Xin Yang Ju Array Microelectronics Co.,Ltd. Address before: 316000 Room 202, 11 Baichuan Road, Lincheng street, Dinghai District, Zhoushan City, Zhejiang Province (centralized office) Patentee before: ZHEJIANG JISU HEXIN TECHNOLOGY CO.,LTD. |
|
TR01 | Transfer of patent right |