CN110993507B - 一种减少覆铜陶瓷基板母板翘曲的方法 - Google Patents
一种减少覆铜陶瓷基板母板翘曲的方法 Download PDFInfo
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- CN110993507B CN110993507B CN201911153346.4A CN201911153346A CN110993507B CN 110993507 B CN110993507 B CN 110993507B CN 201911153346 A CN201911153346 A CN 201911153346A CN 110993507 B CN110993507 B CN 110993507B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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CN201911153346.4A CN110993507B (zh) | 2019-11-22 | 2019-11-22 | 一种减少覆铜陶瓷基板母板翘曲的方法 |
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CN201911153346.4A CN110993507B (zh) | 2019-11-22 | 2019-11-22 | 一种减少覆铜陶瓷基板母板翘曲的方法 |
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CN110993507A CN110993507A (zh) | 2020-04-10 |
CN110993507B true CN110993507B (zh) | 2021-05-25 |
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CN201911153346.4A Active CN110993507B (zh) | 2019-11-22 | 2019-11-22 | 一种减少覆铜陶瓷基板母板翘曲的方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112652541B (zh) * | 2020-12-21 | 2022-07-29 | 上海富乐华半导体科技有限公司 | 一种改善amb基板翘曲的方法 |
CN114478044B (zh) * | 2021-12-26 | 2023-01-06 | 南通威斯派尔半导体技术有限公司 | 一种改善覆铜陶瓷基板母板翘曲的方法 |
CN116813388B (zh) * | 2023-07-07 | 2023-12-26 | 四川富乐华半导体科技有限公司 | 一种使陶瓷金属化方法制作的烧结治具 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1089334B1 (en) * | 1999-09-28 | 2011-06-22 | Kabushiki Kaisha Toshiba | Ceramic circuit board |
CN203277345U (zh) * | 2013-04-28 | 2013-11-06 | 无锡华润安盛科技有限公司 | 一种dbc板封装用定位治具 |
CN104051278A (zh) * | 2014-02-18 | 2014-09-17 | 无锡江南计算技术研究所 | Dbc陶瓷基板的成型铣切方法 |
CN106898583A (zh) * | 2015-12-18 | 2017-06-27 | 上海申和热磁电子有限公司 | 一种便于激光切割的覆铜陶瓷基板 |
CN110379793A (zh) * | 2019-07-08 | 2019-10-25 | 上海申和热磁电子有限公司 | 一种覆铜陶瓷基板母板结构 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8018056B2 (en) * | 2005-12-21 | 2011-09-13 | International Rectifier Corporation | Package for high power density devices |
US7619302B2 (en) * | 2006-05-23 | 2009-11-17 | International Rectifier Corporation | Highly efficient both-side-cooled discrete power package, especially basic element for innovative power modules |
CN105489713A (zh) * | 2015-04-10 | 2016-04-13 | 郭垣成 | 一种无介质敷铜沉金的led封装用的陶瓷基板的制作工艺 |
JP7031172B2 (ja) * | 2017-08-24 | 2022-03-08 | 富士電機株式会社 | 半導体装置 |
CN110099507B (zh) * | 2019-05-29 | 2022-04-05 | 广东依顿电子科技股份有限公司 | 厚铜线路板及其制造方法 |
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2019
- 2019-11-22 CN CN201911153346.4A patent/CN110993507B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1089334B1 (en) * | 1999-09-28 | 2011-06-22 | Kabushiki Kaisha Toshiba | Ceramic circuit board |
CN203277345U (zh) * | 2013-04-28 | 2013-11-06 | 无锡华润安盛科技有限公司 | 一种dbc板封装用定位治具 |
CN104051278A (zh) * | 2014-02-18 | 2014-09-17 | 无锡江南计算技术研究所 | Dbc陶瓷基板的成型铣切方法 |
CN106898583A (zh) * | 2015-12-18 | 2017-06-27 | 上海申和热磁电子有限公司 | 一种便于激光切割的覆铜陶瓷基板 |
CN110379793A (zh) * | 2019-07-08 | 2019-10-25 | 上海申和热磁电子有限公司 | 一种覆铜陶瓷基板母板结构 |
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Address after: 224200 No. 18 Hongda Road, Chengdong New District, Dongtai City, Yancheng City, Jiangsu Province Patentee after: Jiangsu fulehua Semiconductor Technology Co.,Ltd. Address before: 224200 No. 18 Hongda Road, Chengdong New District, Dongtai City, Yancheng City, Jiangsu Province Patentee before: JIANGSU FULEDE SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
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