CN110993013A - eMMC (enhanced multimedia card) volume production test method and device - Google Patents
eMMC (enhanced multimedia card) volume production test method and device Download PDFInfo
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- CN110993013A CN110993013A CN201911105324.0A CN201911105324A CN110993013A CN 110993013 A CN110993013 A CN 110993013A CN 201911105324 A CN201911105324 A CN 201911105324A CN 110993013 A CN110993013 A CN 110993013A
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Abstract
The invention discloses an eMMC (enhanced multimedia card) volume production test method, which comprises the following steps: performing read-write test on the SRAM through firmware, and recording a read-write test result; judging whether to carry out aging test on the Nand Flash according to the read-write test result, and recording the aging test result; and screening error eMMC according to the aging test result. The eMMC mass production test method can increase the read-write test on the SRAM on the premise of not influencing the mass production efficiency so as to improve the factory quality of eMMC products. In addition, the invention also discloses an eMMC volume production testing device.
Description
Technical Field
The invention relates to the technical field of storage devices, in particular to an eMMC (enhanced multimedia card) volume production test method and device.
Background
The eMMC (embedded multi Media card) is an embedded Memory standard specification established by the MCC association for electronic products such as mobile phones or tablet computers, and mainly comprises a controller, a Flash Memory (Nand Flash) and a Static Random-Access Memory (SRAM), wherein firmware is configured in the controller, and the operation process of the eMMC can be controlled through the firmware.
As is known, both the firmware algorithm and the data interaction of the eMMC are performed on the SRAM, and if an error occurs in the SRAM, for example, writing a 0 or writing a 1 to a certain position of the SRAM does not change the original data, the eMMC data is permanently lost, and cannot be corrected by the firmware algorithm.
However, the eMMC volume test is directed to bad block screening for Nand Flash, and is not directed to SRAM. Because the SRAM is not tested, algorithm or data errors may occur in the subsequent use of the eMMC, thereby reducing the product quality of the eMMC.
Disclosure of Invention
The invention mainly aims to provide an eMMC mass production test method to solve the technical problem that the product quality is low due to the fact that an SRAM is not tested in the existing eMMC mass production process.
In order to solve the technical problem, the invention provides an eMMC volume production test method, which comprises the following steps: performing read-write test on the SRAM through firmware, and recording a read-write test result; judging whether to carry out aging test on the Nand Flash according to the read-write test result, and recording the aging test result; and screening error eMMC according to the aging test result.
Preferably, the performing read-write test on the SRAM through the firmware, and recording a read-write test result includes: reading out the data written in the SRAM after each data writing; comparing the read data with the write data, and if the read data is inconsistent with the write data, judging that the SRAM has read-write errors; and stopping continuously performing read-write test on the SRAM after judging that the SRAM has read-write errors.
Preferably, the determining whether to perform the aging test on the Nand Flash according to the read-write test result, and recording the aging test result includes: if the SRAM has read-write errors, the Nand Flash is not subjected to aging test, and the aging test result is set to be failure; and if the SRAM has no read-write error, performing an aging test on the Nand Flash.
Preferably, the screening the error eMMC according to the aging test result includes: judging the eMMC with the error of the SRAM or the Nand Flash to be unqualified, and displaying a corresponding error code; and judging that the eMMC without errors in both the SRAM and the NandFlash is qualified.
Preferably, after the step of determining whether to perform the aging test on the Nand Flash according to the read-write test result and recording the aging test result, the eMMC volume production test method further includes: and performing read-write test on the SRAM again, changing the voltage value of the VCQQ before each read-write test through firmware, and recording the read-write test result.
The invention also provides an eMMC volume production testing device, which comprises: the first read-write test module is used for performing read-write test on the SRAM through firmware and recording a read-write test result; the aging test module is used for judging whether to carry out aging test on the Nand Flash according to the read-write test result and recording the aging test result; and the eMMC screening module is used for screening error eMMC according to the aging test result.
Preferably, the first read-write test module includes: a data reading unit for reading out the data written in the SRAM after each data writing; the data comparison unit is used for comparing the read data with the written data, and if the read data is inconsistent with the written data, the SRAM is judged to have read-write errors; and the test stopping unit is used for stopping continuously performing the read-write test on the SRAM after judging that the SRAM has read-write errors.
Preferably, the burn-in test module includes: the first judging unit is used for not carrying out aging test on the Nand Flash if the SRAM has read-write errors and setting the aging test result as failure; and the second judgment unit is used for carrying out aging test on the Nand Flash if the SRAM has no read-write error.
Preferably, the eMMC screening module includes: a third judging unit, configured to judge the eMMC in which the SRAM or the NandFlash has an error as an unqualified one, and display a corresponding error code; and the fourth judging unit is used for judging that the eMMC without errors in the SRAM and the Nand Flash is qualified.
Preferably, the eMMC volume production testing apparatus further includes: and the second read-write test module is used for performing read-write test on the SRAM again, changing the voltage value of the VCQQ before each read-write test through firmware, and recording the read-write test result.
The embodiment of the invention has the beneficial effects that: firmware is burnt in an original bad block screening process of eMMC volume production, and the SRAM is controlled by the firmware to carry out read-write test so as to screen out the eMMC with an SRAM error, thereby avoiding data calibration errors of the eMMC during subsequent use and improving the product quality of the eMMC.
Drawings
Fig. 1 is a flowchart of a first embodiment of an eMMC mass production testing method according to the present invention;
fig. 2 is a flowchart of a second embodiment of an eMMC mass production testing method according to the present invention;
fig. 3 is a flowchart of a third embodiment of an eMMC mass production testing method according to the present invention;
fig. 4 is a flowchart of a fourth embodiment of an eMMC mass production testing method according to the present invention;
fig. 5 is a flowchart of a fifth embodiment of an eMMC mass production testing method according to the present invention;
fig. 6 is a functional block diagram of an eMMC mass production testing apparatus according to an embodiment of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary and intended to be illustrative of the present invention and should not be construed as limiting the present invention, and all other embodiments that can be obtained by one skilled in the art based on the embodiments of the present invention without inventive efforts shall fall within the scope of protection of the present invention.
In order to solve the above technical problem, the present invention provides an eMMC volume production test method, which, referring to fig. 1, includes:
step S10, read-write test is carried out on the SRAM through firmware, and the read-write test result is recorded;
in this embodiment, the production flow of the eMMC production line mainly includes three stages, namely, original bad block screening, baking aging and firmware burning, where the original bad block screening refers to screening of bad blocks in Nand Flash, and the baking aging refers to screening of unstable blocks in Nand Flash. The Bad blocks (Bad blocks) refer to some blocks of the eMMC memory device which cannot work normally, the original Bad blocks are blocks existing at the time of factory shipment, and the unstable blocks are blocks which are unstable when in use.
The original bad block screening, Nand Flash baking aging and SRAM read-write test are controlled by firmware, and the read-write test of the SRAM does not exist in the existing eMMC mass production process. It should be noted that the firmware refers to a computer program running on hardware, and is used for controlling original bad block screening, Nand Flash baking aging, and SRAM read-write testing of the eMMC.
And in the testing stage of original bad block screening, increasing the read-write test on the SRAM, and recording the result of the read-write test of the SRAM to confirm whether the eMMC has an SRAM error. Because the memory size of the SRAM is not too large, and the data calibration time is short, the read-write test of the SRAM is increased in the mass production process of the eMMC, and the mass production efficiency of the eMMC cannot be greatly influenced.
In addition, the SRAM test for a single eMMC may be performed multiple times to ensure the accuracy of the read-write test, for example, four read-write tests may be performed on the SRAM by firmware, and the data templates of the four read-write tests are 0x00, 0xFF, 0x55, and 0xAA, respectively.
In this embodiment, referring to fig. 2, the step S10 specifically includes:
step S11, after writing data each time, reading data written in the SRAM;
it should be noted that, in writing data to the SRAM, the address of the block to which the data is written is known, and after writing the data, the data can be directly read from the block of the known address.
Step S12, comparing the read data with the written data, if the read data is not consistent with the written data, judging that the SRAM has read-write errors;
it is understood that data reading is a verification for data writing to confirm the read/write performance of the SRAM by comparing the read data with the written data. Specifically, after reading data from the SRAM, the read data is compared with data written in advance, and whether the SRAM has a read-write error is determined according to a result of the data comparison. That is, if the read data is inconsistent with the write data, it can be determined that the SRAM has a read/write error and its read/write performance is abnormal; on the contrary, if the read data is consistent with the write data, the SRAM can be judged to have no read-write error, and the read-write performance is normal.
In addition, since the data templates are all in units of bytes, each byte of data is compared in the comparison process of read data and write data, and if the read data does not match the write data, which byte has an error can be confirmed.
And step S13, stopping continuously performing the read-write test on the SRAM after judging that the SRAM has read-write errors.
In this embodiment, since the firmware algorithm and the data interaction are both run on the SRAM, if the SRAM has an error, the data loss caused by the error will be permanent and cannot be corrected by the firmware algorithm, and therefore, after it is determined that the SRAM has a read-write error, it is not necessary to perform a repeated read-write test on the SRAM, and the read-write test on the SRAM can be stopped, because the SRAM is not allowed to have any read-write error in the usage process of the eMMC.
It should be noted that, when performing a read-write test on the SRAM, if the read-write test result of the SRAM indicates that there is a read-write error in the SRAM, the eMMC with the error in the SRAM may be screened from the mass-produced eMMC at this stage according to the normal production flow. Therefore, considering the issue of mass production efficiency of eMMC, the eMMC with the SRAM faulty at this stage is not screened, but the result of the read-write test is recorded as a reference for the subsequent aging test.
Step S20, judging whether to carry out aging test on the Nand Flash according to the read-write test result, and recording the aging test result;
in this embodiment, after the eMMC enters the baking and aging stage, the read-write test result of the SRAM is checked first. If the SRAM in the first stage has errors, the second stage (baking aging) can keep the errors in the first stage and finish the aging test for Nand Flash in a short time. On the contrary, if the SRAM in the first stage has no error, the second stage can perform the aging test on the Nand Flash.
The aging program can control the sample indicator lamp to Flash or extinguish, so that the normal execution or the termination of the aging program is represented, namely, the aging test of the Nand Flash can be judged visually through the sample indicator lamp. Under normal conditions, the aging time of Nand Flash is more than half an hour, if the sample indicator lamp is turned off in a short time, the aging procedure is ended, and if the sample indicator lamp is always flashing, the aging procedure is normally executed. And the aging test result is kept in a certain block of the Nand Flash for reading the aging test result information in the third stage (firmware burning).
At this stage, the defective samples can be judged by the appearance, but in the actual production, the selection of the sample wafer at this stage affects the production efficiency, so that only the test result is recorded at this stage, and the selection of the defective samples is completed in the third stage.
Referring to fig. 3, the above step S20 includes:
step S21, if the SRAM has read-write error, the Nand Flash is not aged, and the aging test result is set as failure;
after the SRAM in the first stage is determined to have read-write errors, the Nand Flash in the eMMC does not need to be subjected to aging test, because if the SRAM has read-write errors, the eMMC has the problem that data calibration is wrong in subsequent use, and even if the aging test of the Nand Flash does not have the problem, the product quality of the eMMC is not high.
And step S22, if the SRAM has no read-write error, performing aging test on the Nand Flash.
After the SRAM in the first stage is determined to have no read-write error, the Nand Flash needs to be subjected to aging test further to screen out unstable blocks from the Nand Flash. The unstable block is mainly judged through an ECC value, if the ECC value exceeds a certain threshold value, the block can be judged to be unstable and added into a bad block table.
And step S30, screening the error eMMC according to the aging test result.
In this embodiment, the test result of the aging stage is retrieved by the card opening tool, and the error eMMC is screened from the test result stored in the aging test stage. In this stage, the wrong eMMC of the SRAM and other unqualified eMMC can be screened out together, so that the read-write test of the SRAM can be added on the premise of not changing the original link of an eMMC production line, and the aim of improving the outgoing quality of the eMMC is fulfilled.
Referring to fig. 4, the above step S30 includes:
step S31, determining that eMMC with an error of SRAM or Nand Flash is unqualified, and displaying a corresponding error code;
it can be understood that whether the SRAM fails or the Nand Flash fails, the corresponding eMMC will be a failed product, but different error codes will be displayed in the final test report, and the different error codes represent the specific error type, condition, and the like of the eMMC.
And step S32, determining that the eMMC without errors in both the SRAM and the Nand Flash is qualified.
In the embodiment, only when neither the SRAM nor the Nand Flash has a read/write error, the eMMC corresponding to the SRAM can be determined to be a qualified product, and a read/write test on the SRAM is added to avoid a data calibration error, thereby improving the product quality of the eMMC.
In order to ensure the performance of the SRAM, the SRAM is detected again after the aging test of the Nand Flash is finished.
Specifically, referring to fig. 5, after the step S20, the eMMC mass production testing method according to the present invention further includes:
and step S40, performing read-write test on the SRAM again, changing the voltage value of the VCQQ before each read-write test through firmware, and recording the read-write test result.
In this embodiment, after the Nand Flash is baked and aged in the baking oven, the SRAM is subjected to a read-write test to test its stability in a high-temperature environment. Meanwhile, the voltage value of VCCQ is changed by firmware, and the change amplitude of the voltage value is controlled to be between 0 and 10 percent, namely 3.0V and 3.6V. That is, before reading and writing data each time, the voltage value of VCCQ is changed, and then the same SRAM reading and writing test is performed as in the first stage to test the reading and writing performance of the SRAM in case of voltage fluctuation.
Based on the above proposed eMMC volume production test method, the present invention also provides an eMMC volume production test apparatus, referring to fig. 6, the eMMC volume production test apparatus including:
the first read-write testing module 10 is used for performing read-write testing on the SRAM through firmware and recording a read-write testing result;
the aging test module 20 is used for judging whether to carry out aging test on the Nand Flash according to the read-write test result and recording the aging test result;
and the eMMC screening module 30 is used for screening error eMMC according to the aging test result.
In one embodiment, the first read-write test module 10 includes:
a data reading unit 11 for reading data written in the SRAM after each data writing;
the data comparison unit 12 is used for comparing the read data with the written data, and if the read data is inconsistent with the written data, it is determined that the SRAM has a read-write error;
and the test stopping unit 13 is used for stopping the read-write test on the SRAM after judging that the SRAM has read-write errors.
In another embodiment, the burn-in test module 20 includes:
a first determination unit 21, configured to not perform an aging test on the Nand Flash if the SRAM has a read-write error, and set an aging test result as a failure;
and the second determination unit 22 is used for performing aging test on the Nand Flash if the SRAM has no read-write error.
In yet another embodiment, the eMMC screening module 30 includes:
a third determination unit 31, configured to determine that the eMMC in which the SRAM or the Nand Flash has an error is rejected, and display a corresponding error code;
and a fourth determination unit 32, configured to determine that the eMMC without an error in both the SRAM and the Nand Flash is acceptable.
In another embodiment, the eMMC volume production testing apparatus according to the present invention further includes:
and the second read-write testing module 40 is used for performing read-write testing on the SRAM again, changing the voltage value of the VCQQ before each read-write testing through firmware, and recording the read-write testing result.
Each module in the eMMC mass production testing apparatus described above may be entirely or partially implemented by software, hardware, or a combination thereof. The modules can be embedded in a computer device in a hardware form, and can also be stored in a memory in a software form, so that the computer device can call and execute the functions corresponding to the modules. The working principle and the function of each functional module can be referred to the implementation process of the eMMC volume production test method shown in fig. 1 to 5, and are not described herein again.
The above description is only a part of or preferred embodiments of the present invention, and neither the text nor the drawings should be construed as limiting the scope of the present invention, and all equivalent structural changes, which are made by using the contents of the present specification and the drawings, or any other related technical fields, are included in the scope of the present invention.
Claims (10)
1. An eMMC mass production test method is characterized by comprising the following steps:
performing read-write test on the SRAM through firmware, and recording a read-write test result;
judging whether to carry out aging test on the Nand Flash according to the read-write test result, and recording the aging test result;
and screening error eMMC according to the aging test result.
2. The eMMC volume production test method of claim 1, wherein performing a read-write test on the SRAM through the firmware and recording a read-write test result comprises:
reading out the data written in the SRAM after each data writing;
comparing the read data with the write data, and if the read data is inconsistent with the write data, judging that the SRAM has read-write errors;
and stopping continuously performing read-write test on the SRAM after judging that the SRAM has read-write errors.
3. The eMMC volume production test method of claim 1, wherein determining whether to perform an aging test on Nand Flash according to the read-write test result, and recording the aging test result includes:
if the SRAM has read-write errors, the Nand Flash is not subjected to aging test, and the aging test result is set to be failure;
and if the SRAM has no read-write error, performing an aging test on the Nand Flash.
4. The method for mass production of eMMC as claimed in claim 1, wherein said screening for faulty eMMC based on said aging test result comprises:
judging the eMMC with the error of the SRAM or the Nand Flash to be unqualified, and displaying a corresponding error code;
and judging that the eMMC without errors in both the SRAM and the Nand Flash is qualified.
5. The eMMC volume production test method of claim 1, wherein after the step of determining whether to perform the burn-in test on Nand Flash according to the read-write test result and recording the burn-in test result, the eMMC volume production test method further comprises:
and performing read-write test on the SRAM again, changing the voltage value of the VCQQ before each read-write test through firmware, and recording the read-write test result.
6. An eMMC volume production testing device, characterized by includes:
the first read-write test module is used for performing read-write test on the SRAM through firmware and recording a read-write test result;
the aging test module is used for judging whether to carry out aging test on the Nand Flash according to the read-write test result and recording the aging test result;
and the eMMC screening module is used for screening error eMMC according to the aging test result.
7. The eMMC volume production testing device of claim 6, wherein the first read-write testing module comprises:
a data reading unit for reading out the data written in the SRAM after each data writing;
the data comparison unit is used for comparing the read data with the written data, and if the read data is inconsistent with the written data, the SRAM is judged to have read-write errors;
and the test stopping unit is used for stopping continuously performing the read-write test on the SRAM after judging that the SRAM has read-write errors.
8. The eMMC volume production testing device of claim 6, wherein the burn-in testing module comprises:
the first judging unit is used for not carrying out aging test on the Nand Flash if the SRAM has read-write errors and setting the aging test result as failure;
and the second judgment unit is used for carrying out aging test on the Nand Flash if the SRAM has no read-write error.
9. The eMMC volume production testing device of claim 6, wherein the eMMC screening module includes:
a third judging unit, configured to judge the eMMC in which the SRAM or the Nand Flash has an error as a non-conforming item, and display a corresponding error code;
and the fourth judging unit is used for judging that the eMMC without errors in the SRAM and the Nand Flash is qualified.
10. The eMMC volume production testing device of claim 6, further comprising:
and the second read-write test module is used for performing read-write test on the SRAM again, changing the voltage value of the VCQQ before each read-write test through firmware, and recording the read-write test result.
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