CN108573735B - NAND-FLASH block repair method and device - Google Patents
NAND-FLASH block repair method and device Download PDFInfo
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- CN108573735B CN108573735B CN201710136116.1A CN201710136116A CN108573735B CN 108573735 B CN108573735 B CN 108573735B CN 201710136116 A CN201710136116 A CN 201710136116A CN 108573735 B CN108573735 B CN 108573735B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/44—Indication or identification of errors, e.g. for repair
Abstract
The invention provides a block repair method and device of NAND-FLASH, relating to the technical field of data memories. The invention provides a block repair method and device of NAND-FLASH, after detecting the error block, will carry on the corresponding repair operation according to the type of the error block, when the error block is the first spare block, mark the first spare block as bad first spare block, reuse the second spare block to repair the first spare block, in this way, because the first spare block will be marked as bad, therefore, even write into the address of the repaired block before in the first spare block, will be excluded from visiting because of its bad flag bit while visiting the first spare block, not only avoid the invalid visit to the first spare block, has raised the visit efficiency, moreover, have avoided visiting the conflict caused while visiting to the first spare block and second spare block with the same repair address, have guaranteed to utilize the second spare block to repair the operation of the first spare block can reach the effect, thereby making repair resources not wasted.
Description
Technical Field
The invention relates to the technical field of data memories, in particular to a block repair method and device of NAND-FLASH.
Background
The NAND-FLASH memory provides a cheap and effective solution for the implementation of solid-state large-capacity memory because of its internal nonlinear macro-cell mode, and thus is widely used in personal computers and electronic devices, etc. In the actual production process, due to the defects of the manufacturing process, error blocks often occur in the NAND-FLASH memory, so that a certain standby block is preset in the NAND-FLASH as a repair resource in the manufacturing process.
In the prior art, when repairing an error block, the error block is usually repaired by using a reserved spare block after the error block is detected, for example, in the testing stage of a NAND-FLASH, the error block is detected, A, the reserved spare block is used, B and the error block are repaired, and when repairing the error block, the address 01 of the error block is usually written into the address flag bit of the spare block, B, so that the error block is accessed through the address 01, A, and when operating, because the address 01 of the error block, A and B are already written into the spare block, the access to the error block, A and B can be performed on the spare block, and thus, the repairing effect is achieved.
In the process of implementing the invention, the inventor finds that the prior art has at least the following problems:
if the used spare block has an error, i.e. the first spare block has an error, the problem of invalid repair operation may occur in the prior art by directly repairing the first spare block with an unused spare block, i.e. the second spare block, for example, when the spare block has an error, the spare block is used, C repairs the erroneous spare block, B, and in particular, the address 01 stored in the erroneous spare block, B is written into the spare block, C, and the repair operation is completed. However, after the repair, since the addresses stored in the faulty spare block, B and C are all 01, the access to the address 01 is performed simultaneously on the faulty spare block, B and C, and then a conflict occurs, so that the access cannot be performed normally, the repair operation cannot be performed effectively, and the repair resources are wasted.
Disclosure of Invention
In view of the above problems, the present invention has been made to provide a block repair method and apparatus for a NAND-FLASH that overcomes or at least partially solves the above problems.
According to a first aspect of the present invention, there is provided a block repair method for a NAND-FLASH, comprising:
performing block detection on the NAND-FLASH to determine an error block in the NAND-FLASH;
when the error block is the first spare block, marking the error block as bad, and repairing the error block by using a second spare block;
and when the error block is a standard block, repairing the error block by using the second spare block.
Optionally, after the step of performing block detection on the NAND-FLASH and determining an error block in the NAND-FLASH, the method further includes:
determining a type of the erroneous block, the type of the erroneous block comprising: a standard block and a first spare block.
Optionally, the step of determining the type of the error block includes:
comparing the address of the error block with the flag bits of all the spare blocks one by one;
if the comparison is successful, carrying out zone bit detection on the successful standby blocks by comparison, and determining the type of the error block;
and if the comparison fails, determining the type of the error block as a standard block.
Optionally, the step of comparing and detecting flag bits of the successful spare blocks to determine the type of the error block includes:
if the used flag bit of the successfully compared spare block is in a valid state, determining that the type of the error block is a first spare block;
and if the used flag bit of the standby block with successful comparison is in the non-effective state, determining that the type of the error block is a standard block.
Optionally, the step of marking the error block as bad includes:
and setting a flag bit which shows that the error block is bad in the error block flag bits to be effective.
According to a second aspect of the present invention, there is provided a block repair apparatus of a NAND-FLASH, comprising:
the first determining module is used for carrying out block detection on the NAND-FLASH and determining an error block in the NAND-FLASH;
the first repairing module is used for marking the error block as bad when the error block is a first standby block and repairing the error block by using a second standby block;
and the second repair module is used for repairing the error block by using the second standby block when the error block is a standard block.
Optionally, the apparatus further comprises:
a second determining module, configured to determine a type of the erroneous block, where the type of the erroneous block includes: a standard block and a first spare block.
Optionally, the first determining module includes:
the comparison submodule is used for comparing the address of the error block with the zone bits of all the standby blocks one by one;
the first determining submodule is used for carrying out zone bit detection on the successful standby block by comparison if the comparison is successful, and determining the type of the error block;
and the second determining submodule is used for determining the type of the error block as a standard block if the comparison fails.
Optionally, the first determining sub-module is configured to:
if the used flag bit of the successfully compared spare block is in a valid state, determining that the type of the error block is a first spare block;
and if the used flag bit of the standby block with successful comparison is in the non-effective state, determining that the type of the error block is a standard block.
Optionally, the first repair module is configured to:
and setting a flag bit which shows that the error block is bad in the error block flag bits to be effective.
Aiming at the prior art, the invention has the following advantages:
in the block repair method and apparatus for NAND-FLASH provided in the embodiments of the present invention, after detecting an error block, a corresponding repair operation is performed according to the type of the error block, and when the error block is a first spare block, the first spare block is marked as bad, and then the first spare block is repaired by using a second spare block, so that, since the first spare block is marked as bad, even if the address of the repaired block is written in the first spare block before, the access is excluded due to the bad flag bit when accessing the first spare block, thereby not only avoiding invalid access to the first spare block and improving access efficiency, but also avoiding access conflict caused by simultaneous access to the first spare block and the second spare block having the same repair address, and ensuring that the repair operation performed on the first spare block by using the second spare block can achieve the effect, thereby making repair resources not wasted.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a flowchart of the block repair method of a NAND-FLASH according to an embodiment of the present invention;
FIG. 2-1 is a flow chart of another block repair method for NAND-FLASH according to an embodiment of the present invention;
FIG. 2-2 is a flow chart of method steps for determining an erroneous block according to an embodiment of the present invention;
FIGS. 2-3 are flowcharts illustrating steps of a method for determining an error block type according to an embodiment of the present invention;
FIG. 3 is a block diagram of a block repair apparatus for a NAND-FLASH according to an embodiment of the present invention;
FIG. 4-1 is a block diagram of another block repair apparatus for NAND-FLASH according to an embodiment of the present invention;
FIG. 4-2 is a block diagram of a block repair apparatus for a NAND-FLASH according to an embodiment of the present invention;
fig. 4-3 is a block diagram of a second determining module according to an embodiment of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Example one
Referring to fig. 1, a flowchart of steps of a block repair method for a NAND-FLASH according to an embodiment of the present invention is shown, where the method may specifically include the following steps:
In the testing stage of the NAND-FLASH memory, block detection is usually performed on the NAND-FLASH memory, the block detection in the embodiment of the present invention is performed on each standard block and the first spare block in the NAND-FLASH memory, so as to determine an error block, and when block detection is performed, a block which cannot normally operate is generally determined as an error block. NAND-FLASH memories are typically composed of standard blocks and spare blocks. The spare block is a block used to repair a block in the NAND-FLASH memory that is in error, and is divided into a first spare block and a second spare block, wherein the first spare block represents a spare block that has been used and the second spare block represents an unused spare block. By block checking the NAND-FLASH memory, it is determined that the faulty block is likely to be the faulty standard block or the faulty first spare block, e.g., the faulty spare block described above.
And 102, when the error block is the first spare block, marking the error block as bad, and repairing the error block by using a second spare block.
If the faulty block is the first spare block, the faulty block is marked as bad, which ensures that the access will not be performed on the faulty first spare block when the access is performed via the address of the faulty block. For example, if the error block is marked as bad, the access cannot be performed on the error block when the access is performed through the address of the error block, and the example shows that the access cannot be performed on the error block after the error block is marked as bad, the access cannot be performed on the error block through the address 01, so that invalid access to the error block is avoided.
And after the repair is finished, because the error spare block B is marked as bad, when the access is carried out through the address 01, only the spare block C is accessed, and the error spare block B is not accessed, so that the generation of conflict is avoided, the access can be ensured to be normally carried out, and the repair operation of the spare block C on the error spare block B achieves the effect.
And 103, when the error block is a standard block, repairing the error block by using the second spare block.
Because the error block is a standard block, after the error block is directly repaired by the second spare block, the problem of invalid repair operation caused by conflict can not occur, and therefore the error block can be directly repaired by the second spare block.
In summary, according to the block repair method for NAND-FLASH provided in the embodiments of the present invention, after an error block is detected, a corresponding repair operation is performed according to the type of the error block, and when the error block is a first spare block, the first spare block is marked as bad, and then a second spare block is used to repair the first spare block, so that, since the first spare block is marked as bad, even if an address of a repaired block is written into the first spare block before, access to the first spare block is excluded due to a bad flag bit when the first spare block is accessed, so that not only is invalid access to the first spare block avoided, and the access efficiency is improved, but also access conflicts caused by simultaneous access to the first spare block and the second spare block having the same repair address are avoided, and it is ensured that the repair operation performed on the first spare block by using the second spare block can achieve the effect, thereby making repair resources not wasted.
Example two
Referring to fig. 2-1, it shows a flowchart of another block repair method of a NAND-FLASH according to an embodiment of the present invention, and the method may specifically include the following steps:
Wherein the block detection is performed for each standard block and the first spare block in the NAND-FLASH. For example, fig. 2-2 is a flowchart of method steps for determining an error block according to an embodiment of the present invention, and as shown in fig. 2-2, the method may specifically include:
Because the NAND-FLASH includes a plurality of blocks, a target block is determined before programming, and the embodiment of the present invention is not limited as to the method for determining the target block, and for example, the target block can be determined by randomly selecting a plurality of blocks to be detected in the NAND-FLASH; or sequentially determining a plurality of blocks needing to be detected in the NAND-FLASH as target blocks according to a certain sequence. The detection data may be a piece of randomly defined data, as long as it is ensured that the detection data does not affect the normal operation of programming, which is not limited in the embodiment of the present invention.
After the test data is completely programmed, the programmed target block may be read, and the read target data may be compared with the test data, for example, the target data may be compared with the test data bit by bit.
In the process of carrying out bit-by-bit comparison, the inconsistent bits in the target data and the test data can be determined as dislocation, then a preset proportion is set, if the proportion of the number of dislocation exceeds the preset proportion after the comparison is finished, the target data is determined to be inconsistent with the test data, otherwise, if the proportion of the number of dislocation does not exceed the preset proportion, the target data is determined to be consistent with the test data. The specific value of the preset ratio is not limited in the embodiment of the present invention, and can be set according to actual needs during setting.
That is, the target block is determined to be a normal block if the ratio of the number of the error bits does not exceed the preset ratio.
That is, when the ratio of the number of the error bits exceeds the preset ratio, the target block is determined to be an error block.
As described above for the method for schematically determining an erroneous block according to the embodiment of the present invention, in another optional embodiment of the present invention, the erroneous block may also be determined by other methods, and for a specific method for determining an erroneous block, the embodiment of the present invention is not limited.
The type of the error may be a standard block and a first spare block. Fig. 2-3 is a flowchart of method steps for determining a type of the erroneous block according to an embodiment of the present invention, and as shown in fig. 2-2, the method may specifically include:
The all spare blocks include all first spare blocks and all second spare blocks. The flag bits may include addresses of the spare blocks, and the flag bits may also include flag bits indicating whether the spare blocks are used, and when one-to-one comparison is performed, the addresses of the error blocks and the addresses included in the flag bits of each spare block may be compared, if a spare block that is consistent with the address of the error block exists, the comparison is considered to be successful, otherwise, if no spare block that is consistent with the address of the error block exists, the comparison is considered to be failed.
Since the address included in the flag bit of the second spare block is a randomly generated address, and there may be a case where the randomly generated address is consistent with the address of the error block, it is necessary to perform flag bit detection on the spare block whose comparison is successful, and further determine the type of the error block. Specifically, step 2022 may include:
step 2022a, if the used flag bit of the successfully compared spare block is in valid state, determining that the type of the error block is the first spare block.
When the error block is repaired, the used flag bit of the first spare block is usually set to be in an effective state, so if the used flag bit of the spare block with successful comparison is in an effective state, the type of the error block can be determined to be the first spare block.
Step 2022b, if the used flag bit of the successfully compared spare block is in the non-valid state, determining that the type of the error block is a standard block.
If the used flag bit of the successfully compared spare block is in the non-valid state, it can be determined that the address comparison is successful because the randomly generated address is consistent with the address of the error block, and the comparison is successful, so that the type of the error block can be determined to be the standard block.
If the comparison fails, the address of the error block is not written into the spare block, so that the error block can be determined to be the standard block.
And 203, when the error block is the first spare block, marking the error block as bad, and repairing the error block by using a second spare block.
For example, marking the erroneous block as bad may be accomplished by step 2031 as follows:
step 2031, setting the flag bit of the error block to show that the error block is bad and the flag bit is effective.
In practical applications, the flag bit indicating that the error block is bad may be set to a high state, i.e. 1, to indicate that the flag bit is valid, or the flag bit indicating that the error block is bad may be set to a low state, i.e. 0, to indicate that the flag bit is valid. The embodiment of the present invention does not limit the method for setting the flag bit of the error block to indicate that the error block is a bad flag bit and the flag bit takes effect.
For example, in the embodiment of the present invention, the repairing the error block by using the second spare block may be implemented by the following method, specifically, the method may include:
and step A, writing the address of the error block into the address flag bit of the second spare block.
And B, setting the used flag bit of the second spare block to be in an effective state.
And step 204, when the error block is a standard block, repairing the error block by using the second spare block.
For example, when the error block is a standard block, the problem of access conflict does not occur when the error standard block is directly repaired by using the second spare block. In particular, the repairing of the error block by the second spare block may be implemented by the method shown in step 203.
In practical application, when the NAND-FLASH memory is detected for the first time, the step of judging the type of the error block, that is, step 202, can be omitted, and the detected error block is directly repaired, so that the error block detected for the first time is a standard block, and the situation that the error block is a first standby block does not exist, thereby saving the time of repairing operation and reducing the cost of repairing operation.
In summary, according to the block repair method for NAND-FLASH provided in the embodiments of the present invention, after an error block is detected, a corresponding repair operation is performed according to the type of the error block, and when the error block is a first spare block, the first spare block is marked as bad, and then a second spare block is used to repair the first spare block, so that, since the first spare block is marked as bad, even if an address of a repaired block is written into the first spare block before, access to the first spare block is excluded due to a bad flag bit when the first spare block is accessed, so that not only is invalid access to the first spare block avoided, and the access efficiency is improved, but also access conflicts caused by simultaneous access to the first spare block and the second spare block having the same repair address are avoided, and it is ensured that the repair operation performed on the first spare block by using the second spare block can achieve the effect, thereby making repair resources not wasted.
EXAMPLE III
Referring to fig. 3, which shows a block diagram of a block repair apparatus 30 of a NAND-FLASH according to an embodiment of the present invention, as shown in fig. 3, the apparatus 30 may include:
the first determining module 301 is configured to perform block detection on the NAND-FLASH and determine an error block in the NAND-FLASH.
A first repairing module 302, configured to mark the error block as bad when the error block is the first spare block, and repair the error block by using the second spare block.
A second repairing module 303, configured to repair the erroneous block with the second spare block when the erroneous block is a standard block.
In summary, the block repair apparatus for NAND-FLASH according to the embodiments of the present invention performs a corresponding repair operation according to the type of the faulty block after detecting the faulty block, and when the faulty block is the first spare block, the first spare block is marked as bad, and then the second spare block is used to repair the first spare block, so that, since the first spare block is marked as bad, even if the address of the repaired block is written in the first spare block before, the access is excluded due to the bad flag bit when accessing the first spare block, thereby not only avoiding invalid access to the first spare block and improving the access efficiency, but also avoiding access conflict caused by simultaneous access to the first spare block and the second spare block having the same repair address, and ensuring that the repair operation performed on the first spare block by the second spare block can achieve the effect, thereby making repair resources not wasted.
Example four
Referring to fig. 4-1, which shows a block diagram of another block repair apparatus 40 for a NAND-FLASH according to an embodiment of the present invention, as shown in fig. 4-1, the apparatus 40 may include:
the first determining module 401 is configured to perform block detection on the NAND-FLASH and determine an error block in the NAND-FLASH.
A first repairing module 402, configured to mark the error block as bad when the error block is the first spare block, and repair the error block by using the second spare block.
A second repairing module 403, configured to repair the erroneous block with the second spare block when the erroneous block is a standard block.
Referring to fig. 4-2, which shows a block diagram of a block repair apparatus 40 of a NAND-FLASH according to another embodiment of the present invention, as shown in fig. 4-2, the apparatus 40 may include: a determination module 401, a first repair module 402, a second repair module 403, and a determination module 404.
The first determining module 401 is configured to perform block detection on the NAND-FLASH and determine an error block in the NAND-FLASH.
A first repairing module 402, configured to mark the error block as bad when the error block is the first spare block, and repair the error block by using the second spare block.
A second repairing module 403, configured to repair the erroneous block with the second spare block when the erroneous block is a standard block.
A second determining module 404, configured to determine a type of the erroneous block, where the type of the erroneous block includes: a standard block and a first spare block.
Fig. 4-3 is a block diagram of a second determining module 404 according to an embodiment of the present invention, and as shown in fig. 4-3, the second determining module 404 may include:
and the comparison submodule 4041 is used for comparing the address of the error block with the flag bits of all the spare blocks one by one.
The first determining sub-module 4042, configured to, if the comparison is successful, perform flag bit detection on the successful spare blocks by comparison, and determine the type of the erroneous block.
A second determining sub-module 4043, configured to determine that the type of the error block is a standard block if the comparison fails.
The first determining sub-module 4042 may further be configured to:
and if the used flag bit of the successfully-compared spare block is in a valid state, determining that the type of the error block is a first spare block.
And if the used flag bit of the successfully-compared spare block is in the non-effective state, determining that the type of the error block is a standard block.
Optionally, the first repairing module 402 may be configured to:
and setting a flag bit which shows that the error block is bad in the error block flag bits to be effective.
In summary, the block repair apparatus for NAND-FLASH according to the embodiments of the present invention performs a corresponding repair operation according to the type of the faulty block after detecting the faulty block, and when the faulty block is the first spare block, the first spare block is marked as bad, and then the second spare block is used to repair the first spare block, so that, since the first spare block is marked as bad, even if the address of the repaired block is written in the first spare block before, the access is excluded due to the bad flag bit when accessing the first spare block, thereby not only avoiding invalid access to the first spare block and improving the access efficiency, but also avoiding access conflict caused by simultaneous access to the first spare block and the second spare block having the same repair address, and ensuring that the repair operation performed on the first spare block by the second spare block can achieve the effect, thereby making repair resources not wasted.
For the device embodiment, since it is basically similar to the method embodiment, the description is simple, and for the relevant points, refer to the partial description of the method embodiment.
In the description provided herein, numerous specific details are set forth. It is understood, however, that embodiments of the invention may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the invention, various features of the invention are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the invention and aiding in the understanding of one or more of the various inventive aspects. However, the method of the invention should not be construed to reflect the intent: that the invention as claimed requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this invention.
Those skilled in the art will appreciate that the modules in the device in an embodiment may be adaptively changed and disposed in one or more devices different from the embodiment. The modules or units or components of the embodiments may be combined into one module or unit or component, and furthermore they may be divided into a plurality of sub-modules or sub-units or sub-components. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or elements of any method or apparatus so disclosed, may be combined in any combination, except combinations where at least some of such features and/or processes or elements are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise.
Furthermore, those skilled in the art will appreciate that while some embodiments described herein include some features included in other embodiments, rather than other features, combinations of features of different embodiments are meant to be within the scope of the invention and form different embodiments. For example, in the following claims, any of the claimed embodiments may be used in any combination.
It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The invention may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The usage of the words first, second and third, etcetera do not indicate any ordering. These words may be interpreted as names.
Claims (10)
1. A block repair method for NAND-FLASH, characterized in that the method comprises:
performing block detection on the NAND-FLASH to determine an error block in the NAND-FLASH;
when the error block is a first spare block, marking the error block as bad, and repairing the error block by using a second spare block, wherein the first spare block represents a used spare block, and the second spare block represents an unused spare block;
and when the error block is a standard block, repairing the error block by using the second spare block.
2. The method of claim 1, wherein after the steps of performing block detection on a NAND-FLASH and determining an erroneous block in the NAND-FLASH, the method further comprises:
determining a type of the erroneous block, the type of the erroneous block comprising: a standard block and a first spare block.
3. The method of claim 2, wherein the step of determining the type of the erroneous block comprises:
comparing the address of the error block with the flag bits of all the spare blocks one by one;
if the comparison is successful, carrying out zone bit detection on the successful standby blocks by comparison, and determining the type of the error block;
and if the comparison fails, determining the type of the error block as a standard block.
4. The method of claim 3, wherein the step of performing flag bit detection on the successfully aligned spare blocks and determining the type of the error block comprises:
if the used flag bit of the successfully compared spare block is in a valid state, determining that the type of the error block is a first spare block;
and if the used flag bit of the standby block with successful comparison is in the non-effective state, determining that the type of the error block is a standard block.
5. The method of claim 1, wherein said step of marking said corrupted block as bad comprises:
and setting a flag bit which shows that the error block is bad in the error block flag bits to be effective.
6. A block repair apparatus for NAND-FLASH, the apparatus comprising:
the first determining module is used for carrying out block detection on the NAND-FLASH and determining an error block in the NAND-FLASH;
the first repairing module is used for marking the error block as bad and repairing the error block by using a second spare block when the error block is a first spare block, wherein the first spare block represents a used spare block, and the second spare block represents an unused spare block;
and the second repair module is used for repairing the error block by using the second standby block when the error block is a standard block.
7. The apparatus of claim 6, further comprising:
a second determining module, configured to determine a type of the erroneous block, where the type of the erroneous block includes: a standard block and a first spare block.
8. The apparatus of claim 7, wherein the first determining module comprises:
the comparison submodule is used for comparing the address of the error block with the zone bits of all the standby blocks one by one;
the first determining submodule is used for carrying out zone bit detection on the successful standby block by comparison if the comparison is successful, and determining the type of the error block;
and the second determining submodule is used for determining the type of the error block as a standard block if the comparison fails.
9. The apparatus of claim 8, wherein the first determining submodule is configured to:
if the used flag bit of the successfully compared spare block is in a valid state, determining that the type of the error block is a first spare block;
and if the used flag bit of the standby block with successful comparison is in the non-effective state, determining that the type of the error block is a standard block.
10. The apparatus of claim 6, wherein the first repair module is to:
and setting a flag bit which shows that the error block is bad in the error block flag bits to be effective.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710136116.1A CN108573735B (en) | 2017-03-08 | 2017-03-08 | NAND-FLASH block repair method and device |
Applications Claiming Priority (1)
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