CN105225695A - The method for deleting of flash memory and flash memory - Google Patents
The method for deleting of flash memory and flash memory Download PDFInfo
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- CN105225695A CN105225695A CN201410231769.4A CN201410231769A CN105225695A CN 105225695 A CN105225695 A CN 105225695A CN 201410231769 A CN201410231769 A CN 201410231769A CN 105225695 A CN105225695 A CN 105225695A
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Abstract
A kind of method for deleting of flash memory and flash memory.Described method for deleting comprises: the address receiving the storage block of control signal and the pre-erasing being used for erase operation; According to described control signal, using the address of the storage block of described pre-erasing as inquire address, inquire about bad block mapping table, store the address of the first stand-by block in described bad block mapping table, and there is the address of the bad block of one-to-one relationship with the address of described first stand-by block; When getting the address of first stand-by block corresponding with the address of the storage block of described pre-erasing from described bad block mapping table, with the address of the first accessed stand-by block for physical operations address, erase operation is performed to described the first stand-by block got.Apply the life-span that described method for deleting can improve flash memory.
Description
Technical field
The present invention relates to memory technology field, be specifically related to a kind of method for deleting and flash memory of flash memory.
Background technology
Flash memory is widely used nonvolatile memory.Under normal circumstances, described flash memory inside is provided with memory array, and described memory array can comprise multiple storage block, and each storage block comprises multiple storage unit, and each storage unit can store the data of 1bit.Therefore, flash memory can comprise millions of even tens million of storage unit.Under normal circumstances, the erasable number of times of flash memory is about 100,000 times, but, in actual use, because partial memory cell cannot reach the erasable number of times of expectation, have impact on the life-span of flash memory.
Summary of the invention
The problem that the embodiment of the present invention solves is the life-span of how to improve flash memory.
For solving the problem, the embodiment of the present invention provides a kind of method for deleting of flash memory, and described method for deleting comprises:
Receive the address of the storage block of control signal and the pre-erasing being used for erase operation;
According to described control signal, using the address of the storage block of described pre-erasing as inquire address, inquire about bad block mapping table, store the address of the first stand-by block in described bad block mapping table, and there is the address of the bad block of one-to-one relationship with the address of described first stand-by block;
When getting the address of first stand-by block corresponding with the address of the storage block of described pre-erasing from described bad block mapping table, with the address of the first accessed stand-by block for physical operations address, erase operation is performed to described the first stand-by block got.
Alternatively, described method for deleting also comprises:
When not getting the address of first stand-by block corresponding with the address of the storage block of described pre-erasing from described bad block mapping table, with the address of the storage block of described pre-erasing for physical operations address, erase operation is performed to the storage block of described pre-erasing.
Alternatively, also store the address of the second stand-by block in described bad block mapping table, there is not corresponding relation in address and the described defect block addresses of described second stand-by block, described method for deleting also comprises:
When performing erase operation to the storage block of described pre-erasing and being unsuccessful, again inquire about described bad block mapping table;
When getting the address of the second stand-by block from described bad block mapping table, with the address of the second accessed stand-by block for physical operations address, erase operation is performed to described the second stand-by block got.
Alternatively, when getting the address of the second stand-by block from described bad block mapping table, described method for deleting also comprises:
By the position of the defect block addresses corresponding with the address of described the second stand-by block got in the described bad block mapping table of the address of the storage block of described pre-erasing write, and the identification information the second stand-by block got described in being used for representing being replaced state is revised as and replaces state.
Alternatively, also store the address of the second stand-by block in described bad block mapping table, there is not corresponding relation in address and the defect block addresses of described second stand-by block, described method for deleting also comprises:
When with the address of described the first stand-by block got for physical operations address, to described get first stand-by block perform erase operation unsuccessful time, again inquire about described bad block mapping table;
When getting the address of the second stand-by block from described bad block mapping table, with the address of the second accessed stand-by block for physical operations address, erase operation is performed to described the second stand-by block got.
Alternatively, when getting the address of the second stand-by block from described bad block mapping table, described method for deleting also comprises:
The address of the second stand-by block got described in the address of the first stand-by block got described in described bad block mapping table is revised as, and the identification information the second stand-by block got described in being used for representing being replaced state is revised as and replaces state.
Alternatively, describedly again inquire about described bad block mapping table and comprise:
Read in described bad block mapping table for representing the identification information of the replacement state of stand-by block;
When described identification information represents the replacement state of corresponding stand-by block for not replacing, with the address of stand-by block corresponding to described identification information for described in the address of the second stand-by block that gets.
Embodiments of the invention additionally provide a kind of flash memory, and described flash memory comprises:
Receiving element, is suitable for the address received for the control signal of erase operation and the storage block of pre-erasing;
Storage unit, is suitable for storing bad block mapping table, stores the address of the first stand-by block, and there is the address of the bad block of one-to-one relationship with the address of described first stand-by block in described bad block mapping table;
First query unit, is suitable for according to described control signal, with the address of the storage block of described pre-erasing for inquire address, inquires about described bad block mapping table;
First control module, be suitable for when getting the address of first stand-by block corresponding with the address of the storage block of described pre-erasing from described bad block mapping table, with the address of the first accessed stand-by block for physical operations address, erase operation is performed to described the first stand-by block got.
Alternatively, described flash memory also comprises:
Second control module, be suitable for when not getting the address of first stand-by block corresponding with the address of the storage block of described pre-erasing from described bad block mapping table, with the address of the storage block of described pre-erasing for physical operations address, erase operation is performed to the storage block of described pre-erasing.
Alternatively, also store the address of the second stand-by block in described bad block mapping table, there is not corresponding relation in address and the described defect block addresses of described second stand-by block, described flash memory also comprises:
Second query unit, is suitable for, when performing erase operation to the storage block of described pre-erasing and being unsuccessful, again inquiring about described bad block mapping table;
3rd control module, is suitable for when getting the address of the second stand-by block from described bad block mapping table, with the address of the second accessed stand-by block for physical operations address, performs erase operation to described the second stand-by block got.
Alternatively, when getting the address of the second stand-by block from described bad block mapping table, described flash memory also comprises:
Amendment unit, be suitable for the position of the defect block addresses corresponding with the address of described the second stand-by block got in the described bad block mapping table of the address of the storage block of described pre-erasing write, and the identification information the second stand-by block got described in being used for representing being replaced state is revised as and replaces state.
Alternatively, also store the address of the second stand-by block in described bad block mapping table, there is not corresponding relation in address and the defect block addresses of described second stand-by block, described flash memory also comprises:
Second query unit, be suitable for the address of described the first stand-by block got for physical operations address, to described get first stand-by block perform erase operation unsuccessful time, again inquire about described bad block mapping table;
Second control module, is suitable for when getting the address of the second stand-by block from described bad block mapping table, with the second accessed stand-by block address for physical operations address, performs erase operation to described the second stand-by block got.
Alternatively, when getting the address of the second stand-by block from described bad block mapping table, described flash memory also comprises:
Amendment unit, be suitable for the address of the second stand-by block got described in being revised as the address of the first stand-by block got described in described bad block mapping table, and the identification information the second stand-by block got described in being used for representing being replaced state is revised as and replaces state.
Alternatively, described second query unit comprises:
Reading subelement, being suitable for reading in described bad block mapping table for representing the identification information of the replacement state of stand-by block;
Obtaining subelement, being suitable for when described identification information represents the replacement state of corresponding stand-by block for not replacing, with the address of stand-by block corresponding to described identification information for described in the address of the second stand-by block that gets.
Compared with prior art, the technical scheme of the embodiment of the present invention has the following advantages:
By after receiving the control signal for wiping, using the address of the storage block of wiping in advance as inquire address, inquire about bad block mapping table, and after getting the first stand-by block address, erase operation is performed to described first stand-by block, when performing erase operation to flash memory, can realize wiping the equilibrium of each storage block of described flash memory, therefore can improve the life-span of flash memory to a certain extent.
Accompanying drawing explanation
Fig. 1 is the method for deleting process flow diagram of flash memory in the embodiment of the present invention;
Fig. 2 is the structural representation of a kind of flash memory in the embodiment of the present invention;
Fig. 3 is the structural representation of another kind of flash memory in the embodiment of the present invention.
Embodiment
At present, the partial memory cell due to flash memory cannot reach the erasable number of times of expectation, therefore have impact on the life-span of flash memory.
For the problems referred to above, The embodiment provides a kind of method for deleting of flash memory, described method, after receiving the control signal for erase operation, using the address of the storage block of wiping in advance as inquire address, inquires about ring block mapping table.When getting the first stand-by block from described bad block mapping table, namely erase operation being performed to described first stand-by block, achieving and the equilibrium of each storage block of flash memory is wiped, therefore can improve the life-span of flash memory.And, because described method for deleting is applied in perform in the process of erase operation to flash memory, but not be applied in flash memory dispatch from the factory test process in, therefore can when described flash memory be tested by dispatching from the factory, described in embody rule during flash memory, improve the life-span of flash memory further.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiments of the invention below in conjunction with accompanying drawing.
As shown in Figure 1, The embodiment provides a kind of method for deleting of flash memory, described method can comprise the steps:
Step 102: the address receiving the storage block of control signal and the pre-erasing being used for erase operation.
Flash memory carries out wiping or writing usually in units of storage block.According to the described control signal for erase operation, erase operation can be carried out to one or more storage block.The address of the storage block of described pre-erasing, it can be the start address of some storage blocks of flash memory, also can be the start address of multiple continuous print storage block, as long as the storage block of corresponding pre-erasing can be found according to the address of the storage block of described pre-erasing.
Step 104: according to described control signal, using the address of the storage block of described pre-erasing as inquire address, inquires about bad block mapping table.
In an embodiment of the present invention, storage block included by the storage array of described flash memory is divided at least two regions, wherein the storage block of first area is namely as the storage block performing erase operation or other first choices operated, and the storage block of second area is the storage block (i.e. stand-by block) as the alternative objects performing erase operation or other operations.Further, in the storage block of described first area, the storage block that can normally use is comprised, and the storage block that cannot normally use (i.e. bad block).Similarly, in the storage block of described second area, comprise the stand-by block that can normally use, and the stand-by block that cannot normally use.
In an embodiment of the present invention, described bad block mapping table can store the address of the bad block in the flash memory detected, with the address of the address of described bad block the first stand-by block one to one, and all there is not the address of the second stand-by block of corresponding relation with the address of arbitrary described bad block.Wherein, the address of the bad block in the described flash memory detected can be 0, also can be more than 1.When described bad block be address is 0, before performing the method for deleting in the embodiment of the present invention, not yet detect in described flash memory to there is bad block.Also be now 0 with the number of the address of the first stand-by block one to one, the address of described bad block, the address of the stand-by block that described bad block mapping table stores is the address of the second stand-by block that there is not corresponding relation with the address of described bad block.
In concrete enforcement, described bad block mapping table can be stored in described flash memory, also can be stored in other storage mediums, as long as according to described control signal, with the address of the storage block of described pre-erasing for inquire address, described bad block mapping table can be inquired about.
Step 106: judge whether the address getting first stand-by block corresponding with the address of the storage block of described pre-erasing from described bad block mapping table.
Due to the address of described first stand-by block and the address one_to_one corresponding of described bad block, therefore, when inquiring about bad block mapping table, the mode that can be compared by the address of the storage block by described pre-erasing and the address of the bad block stored in described bad block mapping table obtains the address of first stand-by block corresponding with the address of the storage block of described pre-erasing.When the address of the storage block of described pre-erasing is consistent with the address of the bad block stored in described bad block mapping table, be the address of the first described corresponding with the address of the storage block of described pre-erasing stand-by block with the address of described bad block the first stand-by block one to one.When the address of the arbitrary bad block stored in the address and described bad block mapping table of the storage block of described pre-erasing is all inconsistent, then cannot get the address of the first described corresponding with the address of the storage block of described pre-erasing stand-by block from described bad block mapping table.
When getting the address of first stand-by block corresponding with the address of the storage block of described pre-erasing from described bad block mapping table, perform step 108.When not getting the address of first stand-by block corresponding with the address of the storage block of described pre-erasing from described bad block mapping table, perform step 110.
Step 108: when getting the address of first stand-by block corresponding with the address of the storage block of described pre-erasing from described bad block mapping table, with the address of the first accessed stand-by block for physical operations address, erase operation is performed to described the first stand-by block got.
When getting the address of first stand-by block corresponding with the address of the storage block of described pre-erasing from described bad block mapping table, the storage block of described pre-erasing is the storage block that cannot normally use in described first area, namely bad block.Now, the first accessed stand-by block is replaced the storage block of described pre-erasing, corresponding operation is performed to described the first stand-by block got, can realize, to each storage block equilibrium erasing of first area, therefore can improving the life-span of flash memory.
Result according to performing erase operation to described the first stand-by block got performs step 112.
Step 110: when not getting the address of first stand-by block corresponding with the address of the storage block of described pre-erasing from described bad block mapping table, with the address of the storage block of described pre-erasing for physical operations address, erase operation is performed to the storage block of described pre-erasing.
When not getting the address of first stand-by block corresponding with the address of the storage block of described pre-erasing from described bad block mapping table, the bad block detected in the non-described first area of storage block of described pre-erasing, can the address of storage block of described pre-erasing be now physical operations address, erase operation is performed to the storage block of described pre-erasing.
Result according to performing erase operation to the storage block of described pre-erasing performs step 112.
Step 112: judge that whether erase operation is successful.
In concrete enforcement, can by whether completing the mode of erasing after judging to carry out the erase operation of preset times to the storage block of described the first stand-by block of getting or described pre-erasing, to the erase operation of the storage block of described the first stand-by block of getting or described pre-erasing whether successfully to judge.Wherein, described default number of times can be set according to actual needs by those skilled in the art.
Equal 10 times with described default number of times and example is erased to described the first stand-by block got, if after having carried out the erase operation of 10 times to described the first stand-by block got, still cannot complete the erasing to described the first stand-by block got, then to the erasing failure of described the first stand-by block got.Be less than or equal to the erase operation of 10 times if carried out described the first stand-by block got after, such as, after described the first stand-by block got having been carried out to the erase operation of 5 times or 7 times, complete the erasing to described the first stand-by block got, then to the erasing success of described the first stand-by block got.
During with the address of described the first stand-by block got for physical operations address execution erase operation, to the erase operation success of described the first stand-by block got, the first stand-by block got is then the stand-by block that can normally use in the storage block of described second area, otherwise the stand-by block for cannot normally use in described second area.During with the address of the storage block of described pre-erasing for physical operations address execution erase operation, to the erase operation success of the storage block of described pre-erasing, then the storage block of described pre-erasing is the storage block that can normally use in described first area, otherwise the storage block for cannot normally use in described first area.
When erase operation success, perform step 114.When erase operation failure, perform step 116.
Step 114: when erase operation success, to the successful storage block erasure of marks success of erase operation.
The successful storage block of erase operation is marked, can make follow-up when performing write to flash memory and waiting operation, whether with identifying fast, thus directly corresponding operation can be performed to available storage block, to improve the speed that storer performs aforesaid operations to storage block.Wherein, when performing erase operation with the address of described the first stand-by block got for physical operations address, mark wiping successful first stand-by block.When performing erase operation with the storage block of described pre-erasing for physical operations address, mark wiping successfully pre-erase block memory.
Step 116: when erase operation failure, again inquire about described bad block mapping table.
In embodiments of the invention, described bad block mapping table also stores the identification information replacing state for identifying each stand-by block.Described identification information and stand-by block one_to_one corresponding.The replacement state of described stand-by block comprises replaces and does not replace two kinds.In concrete enforcement, can by the replacement state of stand-by block described in the default form unique identification such as character, numeral.Such as, set can be set to identify the replacement state of described stand-by block as replacing, if reset identifies the replacement state of described stand-by block for not replace.
When described stand-by block sets up relation one to one with a certain bad block by address, namely when described stand-by block is the first stand-by block, the corresponding operating of described a certain bad block can be replaced by the first stand-by block corresponding with described bad block, the replacement state of the first now corresponding with described bad block stand-by block for replace, otherwise for not replace.That is, in described bad block mapping table, for replace, all there is not the stand-by block i.e. replacement state of the second stand-by block of corresponding relation for not replace with the address of arbitrary bad block in the replacement state of described first stand-by block.
Due to erase operation failure, therefore, described bad block mapping table again can be inquired about to obtain one second stand-by block.When failed to the erase operation of described the first stand-by block got, the first stand-by block of erase operation failure is replaced with the second accessed stand-by block, and when the erase operation failure of the storage block to described pre-erasing, replace the storage block of the described pre-erasing of erase operation failure with the second accessed stand-by block.Such mistake can improve the life-span of flash memory further.
Step 118: judge whether to get the second stand-by block from described bad block mapping table.
In concrete enforcement, again can inquire about described bad block mapping table in several ways, not be restricted herein.Such as, first can read for representing that each stand-by block replaces the identification information of state in described bad block mapping table, then identify whether described stand-by block is the second stand-by block according to described identification information.Wherein, when knowing the replacement state of described stand-by block for replacing according to described identification information, non-second stand-by block of described stand-by block, and when knowing the replacement state of described stand-by block according to described identification information for not replacing, described stand-by block is the second stand-by block.
When not getting the second stand-by block from described bad block mapping table, perform step 120.When getting the second stand-by block from described bad block mapping table, perform step 122.
Step 120: when not getting the second stand-by block from described bad block mapping table, to the storage block erasure of marks failure of erase operation failure.
When not getting the second stand-by block from described bad block mapping table, the quantity of the address of the second stand-by block stored in described bad block mapping table is 0, does not namely exist with arbitrary bad block all without the stand-by block of corresponding relation in described bad block mapping table.Now cannot get the second stand-by block, to replace the storage block of erase operation failure.
The storage block of erase operation failure is marked, can make follow-up when performing write to flash memory and waiting operation, whether with identifying fast, thus directly corresponding operation can be performed to available storage block, to improve the speed that storer performs aforesaid operations to storage block.Wherein, when with the address of described the first stand-by block got for physical operations address, during to the failure of the erase operation of described the first stand-by block got, to described the first stand-by block erasure of marks operation failure got.When with the address of the storage block of described pre-erasing for physical operations address, during memory block erasing operation failure to described pre-erasing, to the storage block erasure of marks operation failure of described pre-erasing.
Step 122: when getting the second stand-by block from described bad block mapping table, revises described bad block mapping table.
When getting the second stand-by block from described bad block mapping table, in time the replacement state of the corresponding relation in described bad block mapping table and corresponding stand-by block is modified, when being conducive to that described in subsequent applications, bad block mapping table is wiped storage block, obtain the address information of corresponding stand-by block more quickly and accurately, improve the speed to memory block erasing further.
Wherein, when with the address of described the first stand-by block got for physical operations address, during to the failure of the erase operation of described the first stand-by block got, various ways can be adopted to revise described bad block mapping table.Such as, the address of the second stand-by block got described in the address of described the first stand-by block got can being revised as, and the identification information the second stand-by block got described in being used for representing being replaced state is revised as and replaces state.Also can by the position of defect block addresses corresponding with described the second stand-by block address got in the described bad block mapping table of the address of the storage block of described pre-erasing write, and the identification information the second stand-by block got described in being used for representing being replaced state is revised as and replaces state, then the address of the bad block stored at the position place of the defect block addresses corresponding with described the first stand-by block address got is deleted.Which kind of mode no matter is adopted to revise described bad block mapping table, as long as the address of the bad block consistent with the address of the storage block of described pre-erasing can be made corresponding unique corresponding with stand-by block address.
Similarly, when with the address of the storage block of described pre-erasing for physical operations address, during to the failure of the erase operation of the storage block of described pre-erasing, various ways also can be adopted to revise described bad block mapping table.Such as, directly by the position of defect block addresses corresponding with described second stand-by block address in the described bad block mapping table of the address of the storage block of described pre-erasing write, and can replace state by being used for representing that the identification information of described second stand-by block replacement state is revised as.Like this, follow-up when carrying out other operations to the storage block of described pre-erasing, namely by inquiring about described bad block mapping table, obtain the address that the storage block can replacing described pre-erasing carries out the stand-by block of corresponding operating, to improve the life-span of described flash memory.
Step 124: when getting the address of the second stand-by block from described bad block mapping table, with the address of the second accessed stand-by block for physical operations address, performs erase operation to described the second stand-by block got.
When obtaining the address of the second stand-by block from described bad block mapping table, erase operation being performed to the second accessed stand-by block, the life-span of flash memory can be improved.
When with the address of described the first stand-by block got for physical operations address, time failed to the erase operation of described the first stand-by block got, the first stand-by block got described in replacing with described the second stand-by block got, and then replace by the storage block of the pre-erasing of described the first stand-by block replacement got, erase operation is performed to described the second stand-by block got.
When with the address of the storage block of described pre-erasing for physical operations address, during memory block erasing operation failure to described pre-erasing, replace the storage block of described pre-erasing with described the second stand-by block got, erase operation is performed to described the second stand-by block got.
It should be noted that, in concrete enforcement, the execution sequence of step 122 and step 124 is unrestricted, both first can perform step 122, then perform step 124, also first can perform step 124, perform step 122 again, all right step 122 and step 124 simultaneously, unrestricted herein.
It should be noted that, when to described get second stand-by block perform erase operation failure time, can again perform step 112 to 124, concrete implementation can with reference to step 112 to the description of 124, repeat no more herein.
As can be seen from step 102 to 124, method for deleting in the embodiment of the present invention, performing in the process of erasing to the storage block of flash memory, by inquiring about bad block mapping table, whether the storage block can determining described pre-erasing is bad block, and when the storage block determining described pre-erasing is bad block, suitable stand-by block is chosen to replace the storage block of described pre-erasing from described bad block mapping table, and then can realize wiping the equilibrium of each storage block, therefore can improve the life-span of flash memory.
In order to make those skilled in the art understand better and realize the present invention, below the device corresponding to the method for deleting of above-mentioned flash memory is described in detail.
As shown in Figure 2, embodiments of the invention additionally provide a kind of flash memory 200.Described flash memory can comprise: receiving element 210, storage unit 220, the first query unit 230, and the first control module 240.
Wherein, described receiving element 210 can be suitable for the address that receives for the control signal of erase operation and the storage block of pre-erasing.Described storage unit 220 can be suitable for storing bad block mapping table, stores the address of the first stand-by block, and there is the address of the bad block of one-to-one relationship with the address of described first stand-by block in described bad block mapping table.Described first query unit 230 can be suitable for according to described control signal, using the address of the storage block of described pre-erasing as inquire address, inquires about described bad block mapping table.Described first control module 240 can be suitable for when getting the address of first stand-by block corresponding with the address of the storage block of described pre-erasing from described bad block mapping table, with the address of described the first stand-by block got for physical operations address, erase operation is performed to described the first stand-by block got.
In concrete enforcement, described flash memory 200 can also comprise: the second control module 250.Described second control module 250 can be suitable for when not getting first stand-by block corresponding with the address of the storage block of described pre-erasing from described bad block mapping table, with the address of the storage block of described pre-erasing for physical operations address, erase operation is performed to the storage block of described pre-erasing.Further, described flash memory 200 can also comprise: the second query unit 260 and the 3rd control module 270.Wherein, described second query unit 260 can be suitable for, when performing erase operation to the storage block of described pre-erasing and being unsuccessful, again inquiring about described bad block mapping table.Described 3rd control module 270 can be suitable for when getting the address of the second stand-by block from described bad block mapping table, with the address of the second accessed stand-by block for physical operations address, performs erase operation to described the second stand-by block got.
Wherein, described second query unit 260 can comprise reading subelement (not shown) and obtain subelement (not shown).Described reading subelement can be suitable for reading in described bad block mapping table for representing the identification information of the replacement state of stand-by block.Described acquisition subelement can be suitable for when described identification information represents the replacement state of corresponding stand-by block for not replacing, with the address of stand-by block corresponding to described identification information for described in the address of the second stand-by block that gets.
In concrete enforcement, when getting the address of the second stand-by block from described bad block mapping table, described flash memory 200 can also comprise amendment unit 280.Described amendment unit 280 can be suitable for the position of defect block addresses corresponding with the address of described the second stand-by block got in the described bad block mapping table of the address of the storage block of described pre-erasing write, and replaces state by being used for representing that the identification information of described second stand-by block replacement state is revised as.
As shown in Figure 3, embodiments of the invention additionally provide a kind of flash memory 300.Described flash memory 300 except comprising receiving element 310, storage unit 320, the first query unit 330, and outside the first control module 340, the second query unit 350 and the second control module 360 can also be comprised.Wherein, described receiving element 310, storage unit 320, the first query unit 330, and the first control module 340 can respectively with reference to the receiving element 210 in Fig. 2, storage unit 220, the first query unit 230, and the description of the first control module 240.With storage unit in Fig. 2 220 unlike, also storing the address of the second stand-by block in the bad block mapping table that described storage unit 320 stores, there is not corresponding relation in address and the defect block addresses of described second stand-by block.
Described second query unit 350 can be suitable for the address of described first stand-by block for physical operations address, to described get first stand-by block perform erase operation unsuccessful time, again inquire about described bad block mapping table.
Described second control module 360 can be suitable for when getting the address of the second stand-by block from described bad block mapping table, with the second accessed stand-by block address for physical operations address, performs erase operation to described the second stand-by block got.
In concrete enforcement, similar with the second query unit 260 in Fig. 2, described second query unit 350 also comprises reading subelement (not shown) and obtains subelement (not shown).Described reading subelement can be suitable for reading in described bad block mapping table for representing the identification information of the replacement state of stand-by block.Described acquisition subelement can be suitable for when described identification information represents the replacement state of corresponding stand-by block for not replacing, with the address of stand-by block corresponding to described identification information for described in the address of the second stand-by block that gets.
In concrete enforcement, when getting the address of the second stand-by block from described bad block mapping table, described flash memory 300 can also comprise amendment unit 370.The address of the second stand-by block got described in described amendment unit 370 can be suitable for the address of the first stand-by block got described in described bad block mapping table to be revised as, and the identification information the second stand-by block got described in being used for representing being replaced state is revised as and replaces state.
One of ordinary skill in the art will appreciate that all or part of step in the various methods of above-described embodiment is that the hardware that can carry out instruction relevant by program has come, this program can be stored in a computer-readable recording medium, and storage medium can comprise: ROM, RAM, disk or CD etc.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (14)
1. a method for deleting for flash memory, is characterized in that, comprising:
Receive the address of the storage block of control signal and the pre-erasing being used for erase operation;
According to described control signal, using the address of the storage block of described pre-erasing as inquire address, inquire about bad block mapping table, store the address of the first stand-by block in described bad block mapping table, and there is the address of the bad block of one-to-one relationship with the address of described first stand-by block;
When getting the address of first stand-by block corresponding with the address of the storage block of described pre-erasing from described bad block mapping table, with the address of the first accessed stand-by block for physical operations address, erase operation is performed to described the first stand-by block got.
2. the method for deleting of flash memory as claimed in claim 1, is characterized in that, also comprise:
When not getting the address of first stand-by block corresponding with the address of the storage block of described pre-erasing from described bad block mapping table, with the address of the storage block of described pre-erasing for physical operations address, erase operation is performed to the storage block of described pre-erasing.
3. the method for deleting of flash memory as claimed in claim 2, it is characterized in that, also store the address of the second stand-by block in described bad block mapping table, there is not corresponding relation in address and the described defect block addresses of described second stand-by block, described method for deleting also comprises:
When performing erase operation to the storage block of described pre-erasing and being unsuccessful, again inquire about described bad block mapping table;
When getting the address of the second stand-by block from described bad block mapping table, with the address of the second accessed stand-by block for physical operations address, erase operation is performed to described the second stand-by block got.
4. the method for deleting of flash memory as claimed in claim 3, is characterized in that, when getting the address of the second stand-by block from described bad block mapping table, also comprising:
By the position of the defect block addresses corresponding with the address of described the second stand-by block got in the described bad block mapping table of the address of the storage block of described pre-erasing write, and the identification information the second stand-by block got described in being used for representing being replaced state is revised as and replaces state.
5. the method for deleting of flash memory as claimed in claim 1, it is characterized in that, also store the address of the second stand-by block in described bad block mapping table, there is not corresponding relation in address and the defect block addresses of described second stand-by block, described method for deleting also comprises:
When with the address of described the first stand-by block got for physical operations address, to described get first stand-by block perform erase operation unsuccessful time, again inquire about described bad block mapping table;
When getting the address of the second stand-by block from described bad block mapping table, with the address of the second accessed stand-by block for physical operations address, erase operation is performed to described the second stand-by block got.
6. the method for deleting of flash memory as claimed in claim 5, is characterized in that, when getting the address of the second stand-by block from described bad block mapping table, also comprising:
The address of the second stand-by block got described in the address of the first stand-by block got described in described bad block mapping table is revised as, and the identification information the second stand-by block got described in being used for representing being replaced state is revised as and replaces state.
7. the method for deleting of the flash memory as described in claim 3 or 5, is characterized in that, describedly again inquires about described bad block mapping table and comprises:
Read in described bad block mapping table for representing the identification information of the replacement state of stand-by block;
When described identification information represents the replacement state of corresponding stand-by block for not replacing, with the address of stand-by block corresponding to described identification information for described in the address of the second stand-by block that gets.
8. a flash memory, is characterized in that, comprising:
Receiving element, is suitable for the address received for the control signal of erase operation and the storage block of pre-erasing;
Storage unit, is suitable for storing bad block mapping table, stores the address of the first stand-by block, and there is the address of the bad block of one-to-one relationship with the address of described first stand-by block in described bad block mapping table;
First query unit, is suitable for according to described control signal, with the address of the storage block of described pre-erasing for inquire address, inquires about described bad block mapping table;
First control module, be suitable for when getting the address of first stand-by block corresponding with the address of the storage block of described pre-erasing from described bad block mapping table, with the address of the first accessed stand-by block for physical operations address, erase operation is performed to described the first stand-by block got.
9. flash memory as claimed in claim 8, is characterized in that, also comprise:
Second control module, be suitable for when not getting the address of first stand-by block corresponding with the address of the storage block of described pre-erasing from described bad block mapping table, with the address of the storage block of described pre-erasing for physical operations address, erase operation is performed to the storage block of described pre-erasing.
10. flash memory as claimed in claim 9, it is characterized in that, also store the address of the second stand-by block in described bad block mapping table, there is not corresponding relation in address and the described defect block addresses of described second stand-by block, also comprises:
Second query unit, is suitable for, when performing erase operation to the storage block of described pre-erasing and being unsuccessful, again inquiring about described bad block mapping table;
3rd control module, is suitable for when getting the address of the second stand-by block from described bad block mapping table, with the address of the second accessed stand-by block for physical operations address, performs erase operation to described the second stand-by block got.
11. flash memories as claimed in claim 10, is characterized in that, when getting the address of the second stand-by block from described bad block mapping table, also comprise:
Amendment unit, be suitable for the position of the defect block addresses corresponding with the address of described the second stand-by block got in the described bad block mapping table of the address of the storage block of described pre-erasing write, and the identification information the second stand-by block got described in being used for representing being replaced state is revised as and replaces state.
12. flash memories as claimed in claim 8, is characterized in that, also store the address of the second stand-by block in described bad block mapping table, and address and the defect block addresses of described second stand-by block do not exist corresponding relation, also comprise:
Second query unit, be suitable for the address of described the first stand-by block got for physical operations address, to described get first stand-by block perform erase operation unsuccessful time, again inquire about described bad block mapping table;
Second control module, is suitable for when getting the address of the second stand-by block from described bad block mapping table, with the second accessed stand-by block address for physical operations address, performs erase operation to described the second stand-by block got.
13. flash memories as claimed in claim 12, is characterized in that, when getting the address of the second stand-by block from described bad block mapping table, also comprise:
Amendment unit, be suitable for the address of the second stand-by block got described in being revised as the address of the first stand-by block got described in described bad block mapping table, and the identification information the second stand-by block got described in being used for representing being replaced state is revised as and replaces state.
14. flash memories as described in claim 10 or 12, it is characterized in that, described second query unit comprises:
Reading subelement, being suitable for reading in described bad block mapping table for representing the identification information of the replacement state of stand-by block;
Obtaining subelement, being suitable for when described identification information represents the replacement state of corresponding stand-by block for not replacing, with the address of stand-by block corresponding to described identification information for described in the address of the second stand-by block that gets.
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| CN201410231769.4A CN105225695A (en) | 2014-05-28 | 2014-05-28 | The method for deleting of flash memory and flash memory |
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