CN105489246A - NOR flash memory and repair method thereof - Google Patents
NOR flash memory and repair method thereof Download PDFInfo
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- CN105489246A CN105489246A CN201410471290.8A CN201410471290A CN105489246A CN 105489246 A CN105489246 A CN 105489246A CN 201410471290 A CN201410471290 A CN 201410471290A CN 105489246 A CN105489246 A CN 105489246A
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Abstract
The present invention provides a NOR flash memory and a repair method thereof. The repair method comprises: determining whether at least a spare memory block is not used; counting the programmed number of each memory block and the erased number of each memory block; distinguishing whether the programmed number is not less than a first preset threshold value, and whether the erased number is not less than a second preset threshold value; and when the corresponding programmed number of the selected memory block is not less than the first threshold value or the erased number is not less than the second preset threshold value, using at least one spare memory block to replace the selected memory block.
Description
Technical field
The invention relates to a kind of NOR flash memory, and relate to a kind of method for repairing and mending of NOR flash memory especially.
Background technology
Along with the evolve of flash memory manufacturing specification, the downslide of the durability of flash chip, can be lower of cost viewpoint must faced by important topic.In NOR flash memory, because its applied environment and nand flash memory differ widely.Under the considering of cost, NOR flash memory not additional control chip can coordinate, and also therefore, is promoted the serviceable life of NOR flash memory by the algorithm of complexity, has certain difficulty.
Usually, NOR flash memory is used in significant datas such as storing such as boot code.And the data of this type can not put up with any one bit usually makes a mistake.Therefore, in the skill of existing NOR flash memory, all need to apply the most rigorous method to be engaged in production from design end to manufacture end.But, along with the evolution of making and considering of cost, NOR flash memory be made can to meet all element characteristics more and more difficult.Also therefore, how effectively promoting the performance of NOR flash memory, is a great problem of this area deviser.
Summary of the invention
The invention provides a kind of NOR flash memory and method for repairing and mending thereof, to strengthen the service efficiency of NOR flash memory.
The method for repairing and mending of NOR flash memory of the present invention, comprises and judges whether that having at least one slack storage block is not used; Count one of each memory block and be programmed one of number of times and each memory block by number of times of erasing; Differentiate whether be programmed number of times is not less than one first preset critical, and whether number of times of being erased is not less than one second preset critical; And when one of memory block choose memory block corresponding be programmed number of times be not less than the first critical value or number of times of being erased be not less than the second preset critical time, make at least one slack storage block and choose memory block to replace.
NOR flash memory of the present invention, comprises most memory block, most slack storage blocks and Memory Controller.Memory Controller couples memory block and slack storage block, and whether Memory Controller judges to have in slack storage block and at least onely not used, and count each memory block be programmed number of times and each memory block by number of times of erasing.Memory Controller also differentiates whether be programmed number of times is not less than the first preset critical, and whether number of times of being erased is not less than the second preset critical.And when memory block choose memory block corresponding be programmed number of times be not less than the first critical value or number of times of being erased be not less than the second preset critical time, Memory Controller make slack storage block not by use one of them with choose memory block to replace.
Based on above-mentioned, the present invention by counting NOR flash memory each memory block be programmed number of times and by number of times of erasing, and when when being programmed number of times or being exceeded the restriction of default number of times by number of times of erasing of memory block, this memory block of correspondence and slack storage block are carried out displacement action.By this, effectively guarantee that the memory block in using is the memory block with high-reliability, to maintain the quality of the data access of NOR flash memory.Further, by providing slack storage block, the serviceable life of NOR flash memory is also extended.
For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and coordinate accompanying drawing to be described in detail below.
Accompanying drawing explanation
Fig. 1 illustrates the method for repairing and mending of the NOR flash memory of one embodiment of the invention;
Fig. 2 A illustrates the method for repairing and mending of the NOR flash memory of another embodiment of the present invention;
Fig. 2 B illustrates the method for repairing and mending of the NOR flash memory of yet another embodiment of the invention;
Fig. 3 illustrates the schematic diagram of the embodiment of the memory block of the embodiment of the present invention and the displacement of slack storage block;
Fig. 4 illustrates the schematic diagram of the NOR flash memory of one embodiment of the invention.
Description of reference numerals:
S110 ~ S140, S211 ~ S219, S2110 ~ S2111, S221 ~ S229, S2210 ~ S2211: the step of method for repairing and mending;
A1 ~ AM: memory block;
BA1 ~ BAN: slack storage block;
AS: choose memory block;
400:NOR flash memory;
410: memory block;
420: slack storage block;
430: Memory Controller.
Embodiment
Please refer to Fig. 1, Fig. 1 illustrates the method for repairing and mending of the NOR flash memory of one embodiment of the invention.Analyze the aspect applied of NOR flash memory, the more common Basic Input or Output System (BIOS) (BasicInputOutputSystem is called for short BIOS) for being used for storing boot code.By NOR flash memory, institute can applicable various electronic installation, and the user of NOR flash memory can't carry out the action of sequencing (program) and erase (erase) for NOR flash memory memory block.Usually, take boot code as example, master routineization can be placed in the memory block of fixing address, and master routineization only has just can change to some extent when carrying out firmware renewal.That is, the master routine memory block of occupying the issuable sequencing probability of erasing be very low relatively.
Can be learnt by above-mentioned explanation, the action that NOR flash memory only has part can more often carry out sequencing in order to the memory block of computing and record and erase, that is, often carry out sequencing for these and the memory block of action of erasing is repaired, just effectively can promote the bulk life time of NOR flash memory.
Therefore, the present invention increases and arranges one or more slack storage blocks to coordinate the carrying out of repairing action in memory block.Wherein, in step s 110, first judge whether that having at least one slack storage block is not used.When judging one or more slack storage blocks as step S110 not by use, represent that the repairing action of NOR flash memory can be carried out.Accordingly, in the step s 120, then perform to perform for each memory block and be programmed action and by the counting action of the number of times of action of erasing.The counting action of above-mentioned steps S120 be along with NOR flash memory by under the state of use carry out.Wherein, each performed the memory block being programmed action can produce the corresponding count value being programmed number of times, and each performed by the memory block of action of erasing can produce correspondence by the count value of number of times of erasing.Certainly, performed and erased action and be also performed the memory block being programmed action, then produced the corresponding count value being programmed number of times and by the count value of number of times of erasing.
About the implementation detail of step S120, for example bright, when NOR flash memory receives programmed command to carry out sequencing action first to memory block A1, the address Fi of memory block A1 can be recorded in a memory storage, and the number of times that is programmed setting memory block A1 corresponding is 1, when follow-up have again programmed command will carry out sequencing action to memory block A1 time, because the address Fi of memory block A1 has been recorded in the storage device, therefore, the number of times that is programmed that NOR flash memory can directly make memory block A1 corresponding carries out increasing progressively (+1).In like manner, when NOR flash memory receive programmed command with memory block A1 is carried out first erase action time, the address Fi of memory block A1 can be recorded in a memory storage, and the number of times of being erased setting memory block A1 corresponding is 1, when follow-up have again programmed command will to memory block A1 erase action time, because the address Fi of memory block A1 has been recorded in the storage device, therefore, the number of times of being erased that NOR flash memory can directly make memory block A1 corresponding carries out increasing progressively (+1).
In step s 130, which, then carry out each memory block be programmed number of times and by the judgement of number of times of erasing.Wherein, being programmed number of times and can comparing with the first preset critical of each memory block, the number of times of being erased of each memory block then can be compared with the second preset critical.The first above-mentioned preset critical and the second preset critical can be set according to the characteristic of memory block by deviser.Wherein, the first preset critical and the second preset critical can be identical, also can not be identical.
In step S140, when memory block be programmed number of times be more than or equal to the first preset critical time, represent that the number of times that is programmed of this memory block has exceeded safe handling scope.NOR flash memory then can perform the displacement action of this memory block and slack storage block, to complete the repairing action of NOR flash memory.In like manner, when the number of times of being erased of memory block is more than or equal to the second preset critical, then represent that the number of times of being erased of this memory block has exceeded safe handling scope, NOR flash memory then also can perform the displacement action of this memory block and slack storage block, and completes the repairing action of NOR flash memory by this.
About the implementation detail of step S140, for example, NOR flash memory judge memory block A1 be programmed number of times be more than or equal to the first preset critical time, then can select not come to carry out displacement action with memory block A1 by one of them (the slack storage block B1) in the slack storage block that uses.Bright specifically, suppose in an initial condition, logical address LA1 corresponds to the physical address of memory block A1, and when carrying out the displacement action of memory block A1 and slack storage block B1, then makes logical address LA1 change the physical address corresponding to slack storage block B1.
Subsidiary one carries, after the displacement action as memory block A1 and slack storage block B1 completes, record the address of memory block A1 in the storage device and correspondence be programmed number of times and number of times of being erased can be rejected.
In addition, each slack storage block of the embodiment of the present invention all has corresponding using state mark.When each slack storage block is not replaced with arbitrary memory block by use, the using state mark corresponding to it is all expressed as not by using state.After slack storage block (such as slack storage block B1) is replaced by use and a memory block, the using state mark of slack storage block B1 can be set to by using state.
That is, when the inspection of using state of the slack storage block as step S110 will be carried out, as long as simply carry out checking for all using states mark.If in using state mark at least one of them is expressed as not by using state, represent that the repairing action of memory block still can be carried out.Relative, if all using state marks are all expressed as by using state, then represent that the repairing action of memory block cannot be carried out.
Above-mentioned using state mark can utilize logical value to be expressed as not by using state or by using state.For example, using state marks when equaling logical value 1 can represent that corresponding slack storage block is not by using state, can represent that corresponding slack storage block is by using state when using state mark equals logical value 0.Certainly, logical value with not by using state and can have been changed arbitrarily by the corresponding relation of using state, above-mentioned example is not in order to limit the present invention.
Please refer to Fig. 2 A, Fig. 2 A illustrates the method for repairing and mending of the NOR flash memory of another embodiment of the present invention.In step S211, reception program order, and the address Fi that the programmed command that foundation receives in step S212 also will carry out the memory block of sequencing stores.In step S213, judging whether that at least one slack storage block is not used, if when the judged result of step S213 is for being, having carried out step S214 with executive routine and checking (programandverify) action.Counted by the number of times L1 be programmed this memory block, and in step S215, carry out the number of times L1 be programmed of this memory block and preset critical N1 compare.When the number of times L1 be programmed is less than N1, represents that this memory block can continue to provide and carry out sequencing, and when the checking action in step S216 is passed through, terminate the action of sequencing.Relative, when the checking action in step S216 cannot be passed through, then need to re-execute the action that step S214 carries out sequencing again.
Hold above-mentioned, if when judging that in step S215 the number of times L1 that memory block is programmed is more than or equal to preset critical N1, then carry out step S217 with the address Fi of record storage area block, and start the displacement action of slack storage block.Memory block replace by slack storage block after, then can continue to provide memory block to carry out the action (step S219) of sequencing and checking.Further, step S2110 judges whether the number of times of the action of memory block sequencing and checking has exceeded the maximum times of setting, if the result judged has exceeded maximum times (maximum safety value), then and representation program chemical examination card baulk.Relative, if the result judged does not exceed maximum times, and when step S2111 determining program and checking action are passed through, then representation program action completes.If the result judged does not exceed maximum times, and when step S2111 determining program and checking action are not passed through, re-execute step S219.
On the other hand, if when the slack storage block that the judgment result displays of step S213 is all is used all, then cannot repair for this memory block.In this case, this memory block only can be provided to proceed the action of sequencing and checking, be programmed till number of times exceedes maximum safety value until this memory block.
Please refer to Fig. 2 B, Fig. 2 B illustrates the method for repairing and mending of the NOR flash memory of yet another embodiment of the invention.In step S221, receive and to erase order, in step S222, judged whether that at least one slack storage block is not used, if when the judged result of step S222 is for being, performs step S223 and determining whether slack storage block and be enabled.When there being slack storage block to be enabled, then can perform step S226 to start the displacement of slack storage block according to the address Fi of memory block.
If the result that step S223 judges is no, then carry out step S224.Step S224 performs and erases and verify (eraseandverify) action.By being counted by the number of times L2 erased this memory block, to carry out being compared by the number of times L2 that erases and preset critical N2 of this memory block in step S225.When being less than N2 by the number of times L2 erased, represent that this memory block can continue to provide to erase, and when the checking action in step S227 is passed through, terminate the action of sequencing.Relative, when the checking action in step S229 cannot be passed through, then need to re-execute the action that step S224 carries out sequencing again.
Hold above-mentioned, if when judging that in step S225 memory block is more than or equal to preset critical N2 by the number of times L2 erased, then carry out step S226 with the address Fi of the memory block stored according to step S223 to start the displacement of slack storage block.
On the other hand, if when the slack storage block that the judgment result displays of step S222 is all is used all, then cannot repair for this memory block.In this case, only can provide the action (step S229) that this memory block proceeds sequencing and checking, be programmed till number of times exceedes maximum safety value until this memory block.
Wherein, step S2210 judges that memory block is erased and whether the number of times of action verified has exceeded the maximum times of setting, if the result judged has exceeded maximum times (maximum safety value), then and representation program chemical examination card baulk.Relative, if the result judged does not exceed maximum times, and when step S2211 determining program and checking action are passed through, then representation program action completes.If the result judged does not exceed maximum times, and when step S2111 determining program and checking action are not passed through, re-execute step S229.
In the displacement about memory block and slack storage block, please refer to Fig. 3, wherein, Fig. 3 illustrates the schematic diagram of the embodiment of the memory block of the embodiment of the present invention and the displacement of slack storage block.In figure 3, NOR flash memory comprises multiple memory block A1 ~ AM and slack storage block BA1 ~ BAN.Wherein, slack storage block BA1 is not by the state used, and choose the number of times of being erased of memory block AS to be not less than the second critical value or be programmed number of times when being not less than the first critical value, slack storage block BA1 can replace and chooses memory block AS, and makes slack storage block BA1 as the memory block storing data.Original chooses memory block AS then idle.
Below please refer to Fig. 4, Fig. 4 illustrates the schematic diagram of the NOR flash memory of one embodiment of the invention.NOR flash memory 400 comprises memory block 410, slack storage block 420 and Memory Controller 430.There is in memory block 410 memory block of multiple identical memory capacity.Slack storage block 420 comprises at least one memory block.Memory Controller 430 build the logical circuit in NOR flash memory 400 in being.Memory Controller 430 can perform each step of the method for repairing and mending illustrated as Fig. 1, and carries out repairing action by this.
About the action details of each step performed by Memory Controller 430, there is detailed description in aforesaid embodiment and embodiment, below seldom repeat for this reason.
In sum, the present invention by arranging slack storage block in NOR flash memory, and being programmed or by the number of times of erasing, carrying out the displacement action of slack storage block and memory block by count storage area block, complete the repairing action of NOR flash memory by this, promote the serviceable life of NOR flash memory.
Last it is noted that above each embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit; Although with reference to foregoing embodiments to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein some or all of technical characteristic; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.
Claims (12)
1. a method for repairing and mending for NOR flash memory, is characterized in that, this NOR flash memory has most memory block, comprising:
Judge whether that having at least one slack storage block is not used;
Counting respectively this memory block one be programmed number of times and respectively this memory block one by number of times of erasing;
Differentiate that this is programmed number of times and whether is not less than one first preset critical, and whether this number of times of being erased is not less than one second preset critical; And
When one of those memory block choose corresponding this of memory block be programmed number of times be not less than this first critical value or this number of times of being erased be not less than this second preset critical time, make this at least one slack storage block and this choose memory block to replace.
2. the method for repairing and mending of NOR flash memory according to claim 1, is characterized in that, this step being programmed number of times counting respectively this memory block comprises:
The address of respectively this memory block be programmed according to a programmed command record; And
When not existed by this at least one slack storage block used, increasing progressively corresponding this of respectively this memory block of being programmed and being programmed number of times.
3. the method for repairing and mending of NOR flash memory according to claim 2, is characterized in that, when this choose corresponding this of memory block be programmed number of times be not less than this first critical value time, this chooses the physical address of memory block to correspond to a logical address; And
When this choose corresponding this of memory block be programmed number of times be not less than this first critical value time, this logical address is changed the physical address corresponding to this at least one slack storage block.
4. the method for repairing and mending of NOR flash memory according to claim 1, is characterized in that, this of each this memory block of counting is comprised by the step of number of times of erasing:
Erase command record by the address of respectively this memory block of erasing according to one; And
When not existed by this at least one slack storage block used, increasing progressively corresponding this of respectively this memory block of being programmed and being programmed number of times.
5. the method for repairing and mending of NOR flash memory according to claim 4, is characterized in that, when this number of times of being erased that this chooses memory block corresponding is not less than this second critical value, this chooses the physical address of memory block to correspond to a logical address; And
When this number of times of being erased that this chooses memory block corresponding is not less than this second critical value, this logical address is changed the physical address corresponding to this at least one slack storage block.
6. the method for repairing and mending of NOR flash memory according to claim 1, is characterized in that, the corresponding using state mark of this at least one slack storage block, and judges whether that having this at least one slack storage block is not comprised by the step used:
Check that this at least one slack storage block this using state corresponding marks whether to be designated as not by using state.
7. a NOR flash memory, is characterized in that, comprising:
A most memory block;
A most slack storage block; And
One Memory Controller, couple those memory block and those slack storage blocks, whether this Memory Controller judges to have in those slack storage blocks and at least onely not to be used, and counting respectively this memory block one be programmed number of times and respectively this memory block one by number of times of erasing, this Memory Controller also differentiates that this is programmed number of times and whether is not less than one first preset critical, and whether this number of times of being erased is not less than one second preset critical, and when one of those memory block choose corresponding this of memory block be programmed number of times be not less than this first critical value or this number of times of being erased be not less than this second preset critical time, this Memory Controller makes those slack storage blocks do not chosen memory block to replace by one of them and this that use.
8. NOR flash memory according to claim 7, it is characterized in that, the address of respectively this memory block that this Memory Controller is programmed according to a programmed command record, and when not existed by this at least one slack storage block used, increasing progressively corresponding this of respectively this memory block of being programmed and being programmed number of times.
9. NOR flash memory according to claim 8, it is characterized in that, when this choose corresponding this of memory block be programmed number of times be not less than this first critical value time, this chooses the physical address of memory block to correspond to a logical address, when this choose corresponding this of memory block be programmed number of times be not less than this first critical value time, this Memory Controller changes the physical address of this logical address to this at least one slack storage block.
10. NOR flash memory according to claim 8, it is characterized in that, this Memory Controller erases command record by the address of respectively this memory block of erasing according to one, and when not existed by this at least one slack storage block used, increasing progressively corresponding this of respectively this memory block of being programmed and being programmed number of times.
11. NOR flash memory according to claim 10, it is characterized in that, when this number of times of being erased that this chooses memory block corresponding is not less than this second critical value, this chooses the physical address of memory block to correspond to a logical address, when this number of times of being erased that this chooses memory block corresponding is not less than this second critical value, this Memory Controller changes the physical address that this logical address corresponds to this at least one slack storage block.
12. NOR flash memory according to claim 7, it is characterized in that, the corresponding using state mark of this at least one slack storage block, and this Memory Controller checks that this at least one slack storage block this using state corresponding marks whether to be designated as not by using state.
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| CN105489246B (en) | 2018-10-19 |
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