CN110970332B - Wafer detection equipment for integrated circuit by taking silicon dioxide ore as raw material - Google Patents
Wafer detection equipment for integrated circuit by taking silicon dioxide ore as raw material Download PDFInfo
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- CN110970332B CN110970332B CN201911311738.9A CN201911311738A CN110970332B CN 110970332 B CN110970332 B CN 110970332B CN 201911311738 A CN201911311738 A CN 201911311738A CN 110970332 B CN110970332 B CN 110970332B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67271—Sorting devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Abstract
The invention relates to the technical field of wafer detection, and discloses wafer detection equipment for an integrated circuit, which takes silicon dioxide ore as a raw material. The air current is followed separation piece surface blowout to blow on the crystal on conveyer belt surface, because of the area of crystal is greater than the distance between the detection mechanism, so the crystal surface can evenly receive the holding power of air current, and be in the air current of the same degree of consistency of support frame upper portion detection mechanism also blowout, thereby the crystal no longer contacts with the conveyer belt, the detection camera lens of upper and lower both sides shines on the crystal surface, thereby reached contactless crystal surface alright carry out the effect that detects.
Description
Technical Field
The invention relates to the technical field of wafer detection, in particular to wafer detection equipment for an integrated circuit, which takes silicon dioxide ore as a raw material.
Background
In a general semiconductor process, after a plurality of chips are formed on a wafer surface, the chips are usually continuously subjected to processes such as spot measurement, detection, classification and the like; the inspection process mainly scans the chip by using an inspection lens and judges whether the chip has defects according to the captured image.
In the detection process, the wafer needs to be placed on the objective table, the flatness requirement of the objective table is high, the wafer is a compact part, the detection result can be influenced by slight deviation, the bidirectional detection is a common method for detecting the wafer, the outer edge of the wafer is clamped by the clamping mechanism, and the center of the wafer is slightly concave because only the outer edge of the wafer is supported and the center of the wafer is not supported, so that the wafer is not flat any more and the detection quality is influenced.
In addition, silicon wafers often have appearance defects such as unqualified sizes, edge breakage, hidden cracking and the like in the production process, and after the existing detection equipment detects the silicon wafers, the existing detection equipment does not have a corresponding sorting mechanism, so that unqualified products and qualified products are mixed together, manual sorting or machine re-sorting is needed, time and labor are wasted, and therefore the wafer detection equipment for the integrated circuit using silicon dioxide ore as a raw material is produced.
Disclosure of Invention
In order to realize the purposes of non-contact detection and sorting after detection, the invention provides the following technical scheme: the utility model provides an use wafer check out test set for integrated circuit of silica ore as raw materials, includes the conveyer belt, the fixed surface of conveyer belt is connected with the support frame, and the fixed surface of support frame is connected with the camera lens, and the inside swing joint of support frame has the flabellum, and the fixed surface of flabellum is connected with the pivot, and the inside of support frame just is located one side fixedly connected with detection mechanism that the pivot was kept away from to the flabellum, detection mechanism includes the slider, and the inside sliding connection of slider has the barrier block, and the fixed surface of barrier block is connected with the breather pipe, and the one end fixedly connected with shunt tubes of barrier block is kept away from to the breather pipe, and the one end fixedly connected with elastic rod of breather pipe is kept away from to the shunt tube.
The invention has the beneficial effects that:
1. the wafer to be detected is placed on the conveying belt, the driving part is started to generate gas, the airflow flows out of the inside of the supporting frame and blows the fan blades to rotate, the fan blades drive the rotating shaft and the idler wheels to rotate, the conveying belt is driven to rotate the wafer, meanwhile, the shaft sleeve is rotated according to the weight of the wafer to be detected, the airflow flowing into the vent pipe from the shunt pipe is adjusted, the airflow is sprayed out from the surface of the separation block, and the airflow is blown onto the crystal on the surface of the conveying belt, the area of the crystal is larger than the distance between the detection mechanisms, the surface of the crystal can be uniformly supported by the airflow, the airflow with the same uniformity is sprayed out by the detection mechanisms on the upper portion of the supporting frame, the crystal is not contacted with the conveying belt, the detection lenses on the upper side and the lower side are irradiated on the surface of the crystal, and the effect that the detection can be carried out without contacting the surface of the crystal is achieved.
2. The airflow is jetted from the detection mechanism to the surface of the crystal, the balance of the crystal can be kept only when the top and the bottom of the crystal are subjected to the airflow with the same flow rate and size, if the surface of the crystal has edge breakage, the crystal is stressed unevenly and deviates to one side, and finally falls from the falling port, so that the effect of sorting the edge breakage wafer during detection is achieved.
3. Through the airflow jet flow on the surface of the crystal, if impurities are carried on the surface of the crystal at the moment, the impurities on the surface can be blown down on the surface of the blocking block and cannot fall into the blocking block under the action of the airflow in the upper and lower ventilation pipes, so that the effect of preventing the uneven stress of the blocking block due to blockage is achieved.
4. The air flow is jetted from the detection mechanism to the surface of the crystal, and the jetted air flow has certain flow velocity, so that the crystal is supported, the surface of the crystal is also subjected to strong impact force, if hidden marks exist on the surface of the crystal, the hidden marks cannot be observed easily by naked eyes, but the hidden marks are exposed through the impact of the air flow, and the exposed hidden marks are not stable under the action of the air flow, so that the effect of sorting the hidden mark wafers during detection is achieved.
Preferably, the surface of the elastic rod is sleeved with a shaft sleeve, and the surface of the shaft sleeve is provided with air holes which have the effect of adjusting the flow rate of the air.
Preferably, the surface of the rotating shaft is sleeved with a roller, so that the conveying belt is conveniently driven to operate.
Preferably, the fan blades are positioned at the center of the roller, so that the fan blades can conveniently play a role of a power source.
Preferably, the surface of the conveyor belt and the two sides of the detection mechanism are provided with falling inlets, so that unqualified wafers can fall off conveniently.
Preferably, the detection mechanism is distributed on two sides of the support frame, so that the effect of stable clamping is conveniently achieved.
Preferably, the number of the shunt tubes is three, and the number of the elastic rods is also three, so that the gas flow rate can be conveniently regulated.
Preferably, the shunt tubes and the elastic rods are matched with each other in pairs.
Drawings
FIG. 1 is a front cross-sectional view of the support frame structure of the present invention;
FIG. 2 is a schematic structural distribution diagram of the detecting mechanism of the present invention;
FIG. 3 is a schematic view of the detection mechanism of the present invention;
FIG. 4 is a schematic view of the structure of the elastic rod of the present invention;
FIG. 5 is an enlarged view of a portion A of FIG. 4;
FIG. 6 is a top view of the conveyor belt structure of the present invention.
In the figure: 1-conveying belt, 2-supporting frame, 3-lens, 4-fan blade, 5-rotating shaft, 6-detection mechanism, 7-sliding body, 8-blocking block, 9-ventilating pipe, 10-shunt pipe, 11-elastic rod, 12-shaft sleeve, 13-air hole, 14-roller and 15-dropping inlet.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-6, a wafer inspection apparatus for integrated circuit using silicon dioxide ore as raw material, comprising a conveyor belt 1, a support frame 2 fixedly connected to the surface of the conveyor belt 1, a lens 3 fixedly connected to the surface of the support frame 2, a Teledyne DALSA line scanning camera, a large target surface with ES-S0-12K40-00-R12K resolution, 90kHz line frequency, a detection mechanism 6 located at the upper and lower portions of the support frame 2 ejecting airflow with the same uniformity, so that the crystal is no longer in contact with the conveyor belt 1, the detection lenses 3 at the upper and lower sides irradiate on the crystal surface to perform the inspection function without contacting the crystal surface, a fan blade 4 movably connected to the interior of the support frame 2, the fan blade 4 located at the center of a roller 14 to function as a power source, the surface of the fan blade 4 is fixedly connected with a rotating shaft 5, the surface of the rotating shaft 5 is sleeved with a roller 14, the conveyor belt 1 is convenient to drive to run, the detection mechanism 6 is fixedly connected inside the support frame 2 and positioned on one side of the fan blade 4 away from the rotating shaft 5, the detection mechanism 6 is distributed on two sides of the support frame 2, the stable clamping effect is convenient to play, the falling inlets 15 are formed in the surface of the conveyor belt 1 and positioned on two sides of the detection mechanism 6, unqualified wafers can fall off conveniently, the balance of the crystals can be kept only when the top and the bottom of the crystals are subjected to air flows with the same flow velocity and size, if the edge breakage phenomenon exists on the surface of the crystals, the crystals are stressed unevenly and are deviated to one side, and finally fall off from the falling inlets 15, and the function of sorting out edge breakage wafers during detection is achieved; the sprayed airflow has a certain flow velocity, so that the crystal is supported, and the surface of the crystal is also subjected to strong impact force, if hidden marks exist on the surface of the crystal, the hidden marks are difficult to observe by naked eyes, but are exposed through airflow impact, and the exposed hidden marks are not stable under the airflow force, so that the wafer with the hidden marks is separated during detection; detection mechanism 6 includes the slider 7, the inside sliding connection of slider 7 has the separation block 8, if the crystal surface has impurity this moment, under the effect of air current in upper and lower breather pipe 9, the impurity on its surface can be blown down on separation block 8 surface, can not drop into, play and prevent to appear making the effect of its inhomogeneous phenomenon of atress because of blockking up, the fixed surface of separation block 8 is connected with breather pipe 9, the one end fixedly connected with shunt tubes 10 of separation block 8 is kept away from to breather pipe 9, the quantity of shunt tubes 10 is three, the quantity of elastic rod 11 is also three, be convenient for adjust the gas flow rate, shunt tubes 10 and two double-phase mutual supporting of elastic rod 11, the one end fixedly connected with elastic rod 11 of breather pipe 9 is kept away from to shunt tubes 10, axle sleeve 12 has been cup jointed on the surface of elastic rod 11, gas pocket 13 has been seted up on the surface of axle sleeve 12, gas pocket 13 plays the effect of adjusting the gas flow rate.
When the wafer detection device is used, a wafer to be detected is placed on the conveyor belt 1, the driving part is started to generate gas, the gas flows out of the inside of the support frame 2 and blows the fan blades 4 to rotate, the fan blades 4 drive the rotating shaft 5 and the rollers 14 to rotate, the conveyor belt 1 is driven to rotate the wafer, meanwhile, the shaft sleeve 12 is rotated according to the weight of the wafer to be detected, the gas flowing into the vent pipe 9 from the shunt pipe 10 is regulated, the gas is sprayed out from the surface of the blocking block 8 and blows on the crystal on the surface of the conveyor belt 1, the surface of the crystal can be uniformly supported by the supporting force of the gas flow due to the fact that the area of the crystal is larger than the distance between the detection mechanisms 6, the detection mechanisms 6 on the upper portion of the support frame 2 also spray gas flow with the same uniformity, the crystal is not contacted with the conveyor belt 1 any more, the detection lenses 3 on the upper side and the lower side are irradiated on the surface of the crystal, and the effect of detection can be achieved without contacting the surface of the crystal; the airflow is jetted from the detection mechanism 6 to the surface of the crystal, the balance of the airflow can be kept only when the top and the bottom of the crystal are subjected to the airflow with the same flow rate and size, if the surface of the crystal has edge breakage, the edge breakage phenomenon can cause the crystal to be stressed unevenly and to deviate to one side, and finally the crystal falls from the falling port 15, so that the function of sorting the edge breakage wafers during detection is achieved; the air flow is jetted on the surface of the crystal, if impurities are carried on the surface of the crystal, the impurities on the surface can be blown to the surface of the blocking block 8 under the action of the air flow in the upper and lower vent pipes 9 and can not fall into the blocking block, so that the phenomenon of uneven stress caused by blockage can be prevented; the air flow is jetted from the detection mechanism 6 to the surface of the crystal, and the jetted air flow has certain flow velocity, so that the crystal is supported, and meanwhile, the surface of the crystal is subjected to strong impact force.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered as the technical solutions and the inventive concepts of the present invention within the technical scope of the present invention.
Claims (7)
1. Wafer inspection apparatus for integrated circuits, starting from silica ore, comprising a conveyor belt (1), characterized in that: the surface of the conveyor belt (1) is fixedly connected with a support frame (2), the surface of the support frame (2) is fixedly connected with a lens (3), the inside of the support frame (2) is movably connected with a fan blade (4), the surface of the fan blade (4) is fixedly connected with a rotating shaft (5), and the inside of the support frame (2) and one side, far away from the rotating shaft (5), of the fan blade (4) is fixedly connected with a detection mechanism (6);
the detection mechanism (6) comprises a sliding body (7), a blocking block (8) is connected inside the sliding body (7) in a sliding mode, a vent pipe (9) is fixedly connected to the surface of the blocking block (8), one end, far away from the blocking block (8), of the vent pipe (9) is fixedly connected with a shunt pipe (10), and one end, far away from the vent pipe (9), of the shunt pipe (10) is fixedly connected with an elastic rod (11);
the detection mechanism (6) that distributes in support frame (2) upper portion and lower part spouts the air current of same degree of consistency, the surface of conveyer belt (1) just is located the both sides of detection mechanism (6) and has all seted up and fall into mouth (15), if the crystal surface has the phenomenon of collapsing the limit, can lead to its atress inhomogeneous, and to one side skew, finally drops from falling into mouth (15).
2. A wafer inspection apparatus for integrated circuits using silica ore as a raw material according to claim 1, wherein: the surface of the elastic rod (11) is sleeved with a shaft sleeve (12), and the surface of the shaft sleeve (12) is provided with an air hole (13).
3. A wafer inspection apparatus for integrated circuits using silica ore as a raw material according to claim 1, wherein: and the surface of the rotating shaft (5) is sleeved with a roller (14).
4. A wafer inspection apparatus for integrated circuits using silica ore as a raw material according to claim 1, wherein: the fan blades (4) are positioned at the central position of the roller (14).
5. A wafer inspection apparatus for integrated circuits using silica ore as a raw material according to claim 1, wherein: the detection mechanisms (6) are distributed on two sides of the support frame (2).
6. A wafer inspection apparatus for integrated circuits using silica ore as a raw material according to claim 1, wherein: the number of the shunt tubes (10) is three, and the number of the elastic rods (11) is also three.
7. A wafer inspection apparatus for integrated circuits using silica ore as a raw material according to claim 1, wherein: the shunt tubes (10) and the elastic rods (11) are matched with each other pairwise.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911311738.9A CN110970332B (en) | 2019-12-18 | 2019-12-18 | Wafer detection equipment for integrated circuit by taking silicon dioxide ore as raw material |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911311738.9A CN110970332B (en) | 2019-12-18 | 2019-12-18 | Wafer detection equipment for integrated circuit by taking silicon dioxide ore as raw material |
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| CN110970332A CN110970332A (en) | 2020-04-07 |
| CN110970332B true CN110970332B (en) | 2022-12-13 |
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Citations (8)
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| CN101276756A (en) * | 2007-03-30 | 2008-10-01 | 胜高股份有限公司 | Etching method and apparatus for a single wafer |
| JP2016186957A (en) * | 2015-03-27 | 2016-10-27 | 株式会社東京精密 | Calf depth measuring apparatus |
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| CN109065439A (en) * | 2018-08-09 | 2018-12-21 | 烟台睿创微纳技术股份有限公司 | A kind of MEMS wafer surface particles eliminating equipment and method |
| CN109946579A (en) * | 2019-04-04 | 2019-06-28 | 杭州载力科技有限公司 | A kind of semiconductor wafer detecting device |
| JP2019133995A (en) * | 2018-01-29 | 2019-08-08 | 京セラ株式会社 | Sample holder |
| CN110176413A (en) * | 2019-04-15 | 2019-08-27 | 南宁聚信众信息技术咨询有限公司 | Safe and reliable efficient mechanical equipment for chip sorting |
-
2019
- 2019-12-18 CN CN201911311738.9A patent/CN110970332B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005345298A (en) * | 2004-06-03 | 2005-12-15 | Nikon Corp | Position detection device and its method, and exposure device and its method |
| CN101276756A (en) * | 2007-03-30 | 2008-10-01 | 胜高股份有限公司 | Etching method and apparatus for a single wafer |
| JP2016186957A (en) * | 2015-03-27 | 2016-10-27 | 株式会社東京精密 | Calf depth measuring apparatus |
| CN106826537A (en) * | 2016-12-28 | 2017-06-13 | 重庆晶宇光电科技有限公司 | Wafer grinding equipment with dust-absorbing function |
| JP2019133995A (en) * | 2018-01-29 | 2019-08-08 | 京セラ株式会社 | Sample holder |
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Effective date of registration: 20221117 Address after: No. 1901, nanfangshan community, Songping District, Shenzhen, Guangdong Province Applicant after: SHENZHEN PIONEER ELECTRONICS Co.,Ltd. Address before: 317200 Times Garden of Workers'East Road, Baihe Town, Tiantai County, Taizhou City, Zhejiang Province Applicant before: Chen Jiahui |
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