CN110969990B - Current sensing device and organic light emitting display device including the same - Google Patents

Current sensing device and organic light emitting display device including the same Download PDF

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Publication number
CN110969990B
CN110969990B CN201910506791.8A CN201910506791A CN110969990B CN 110969990 B CN110969990 B CN 110969990B CN 201910506791 A CN201910506791 A CN 201910506791A CN 110969990 B CN110969990 B CN 110969990B
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current
sensing
pixel
gate
buffer
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CN110969990A (en
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李泰瑛
林明基
禹景敦
金凡植
金承泰
李秉宰
宋敏圭
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LG Display Co Ltd
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LG Display Co Ltd
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • G09G3/3241—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element the current through the light-emitting element being set using a data current provided by the data driver, e.g. by using a two-transistor current mirror
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3275—Details of drivers for data electrodes
    • G09G3/3291—Details of drivers for data electrodes in which the data driver supplies a variable data voltage for setting the current through, or the voltage across, the light-emitting elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/029—Improving the quality of display appearance by monitoring one or more pixels in the display panel, e.g. by monitoring a fixed reference pixel
    • G09G2320/0295—Improving the quality of display appearance by monitoring one or more pixels in the display panel, e.g. by monitoring a fixed reference pixel by monitoring each display pixel
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/043—Preventing or counteracting the effects of ageing
    • G09G2320/045—Compensation of drifts in the characteristics of light emitting or modulating elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/06—Handling electromagnetic interferences [EMI], covering emitted as well as received electromagnetic radiation
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/12—Test circuits or failure detection circuits included in a display system, as permanent part thereof

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of El Displays (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Testing Electric Properties And Detecting Electric Faults (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

Disclosed are a current sensing device and an organic light emitting display device including the same. The current sensing apparatus may include a plurality of sensing units, each of which is for converting a pixel current input through a sensing line into a digital sensing value, and each of which includes: a current integrator including an integrating amplifier including an inverting input terminal, a non-inverting input terminal, and an output terminal, and a feedback capacitor connected between the inverting input terminal and the output terminal, a first reference voltage being input to the non-inverting input terminal; and a current transfer unit connected between the sensing line and the current integrator to separate electrical connection between the sensing line and the current integrator, wherein the current transfer unit performs mirroring on the pixel current and causes the mirrored current to be output from an inverting input terminal of the integrating amplifier.

Description

Current sensing device and organic light emitting display device including the same
This application claims and is based on the priority of korean patent application No.10-2018-0116096, filed on 28.9.2018, which is incorporated herein by reference for all purposes as if fully set forth herein.
Technical Field
The present invention relates to an organic light emitting display device, and more particularly, to a current sensing device and an organic light emitting display device including the same.
Background
The active matrix organic light emitting display device includes an Organic Light Emitting Diode (OLED) capable of emitting light by itself and has many advantages such as a fast response speed, a high light emitting efficiency, a high luminance, a wide viewing angle, and the like.
The organic light emitting display device arranges a plurality of pixels (each including an OLED) in a matrix form, and adjusts the luminance of the pixels based on the gray level of video data. Each pixel includes a driving Thin Film Transistor (TFT) which controls a pixel current flowing through the OLED based on a voltage Vgs between a gate and a source of the driving TFT. The driving characteristics of the OLED and the driving TFT are changed or deteriorated due to temperature. If the driving characteristics of the OLED and/or the driving TFT are different for each pixel, the luminance is different between pixels even if the same image data is written to the pixels, so that it is difficult to achieve desired image quality.
The external compensation scheme is a well-known scheme for compensating for a variation in driving characteristics of the OLED or the driving TFT. The external compensation scheme senses a variation in driving characteristics of the OLED or the driving TFT and modulates image data based on the sensing result.
Disclosure of Invention
The organic light emitting display device senses a pixel current corresponding to a driving characteristic of the OLED or the driving TFT using a current integrator. Since the current integrator is connected to each channel, the organic light emitting display device is equipped with a plurality of current integrators. The current integrator is advantageous in reducing the sensing time by realizing low current and high speed sensing, but is susceptible to noise. The noise is caused by a variation in a reference voltage applied to a non-inverting input terminal of the current integrator or a noise source difference between sense lines connected to an inverting input terminal of the current integrator.
The capacitance of the feedback capacitor included in the current integrator is designed to be small so that the sensing time between the current integrators and the output voltage are constant. If the capacitance of the feedback capacitor is small, noise mixed in the reference voltage is easily amplified due to the parasitic capacitance of the sensing line. Since noise amplified in the current integrator is reflected on the integrated value, the noise may distort the sensing result of the pixel current. If the sensing performance is degraded, the driving characteristics of the OLED and/or the driving TFT cannot be accurately sensed and compensated.
Accordingly, an object of the present invention is to provide a current sensing device and an organic light emitting display device capable of minimizing distortion of a sensing result due to noise.
One aspect of the present invention provides a current sensing apparatus including a plurality of sensing units, each of which is for converting a pixel current input through a sensing line into a digital sensing value, and each of which includes: a current integrator including an integrating amplifier including an inverting input terminal, a non-inverting input terminal, and an output terminal, and a feedback capacitor connected between the inverting input terminal and the output terminal, a first reference voltage being input to the non-inverting input terminal; and a current transfer unit connected between the sensing line and the current integrator to separate electrical connection between the sensing line and the current integrator, wherein the current transfer unit performs mirroring on the pixel current and causes the mirrored current to be output from an inverting input terminal of the integrating amplifier.
According to one or more embodiments of the present invention, the current transfer unit may include: a first mirror transistor having a gate and a first electrode connected to a shared node to which the pixel current is applied, and a second electrode connected to a ground voltage source; and a second mirror transistor, a gate of the second mirror transistor being connected to the shared node, a first electrode of the second mirror transistor being connected to the inverting input terminal of the integrating amplifier, a second electrode of the second mirror transistor being connected to a ground voltage source.
According to one or more embodiments of the present invention, the mirrored current may be greater than the pixel current, and the channel capacitance of the second mirror transistor may be greater than the channel capacitance of the first mirror transistor.
According to one or more embodiments of the present invention, the current sensing apparatus may further include a current buffer connected between the sensing line and the current transmitting unit, the current buffer for applying a second reference voltage to a pixel through which the pixel current flows to fix a voltage of a source node of the pixel to be constant.
According to one or more embodiments of the present invention, the current buffer may include: a buffer amplifier, an inverting input terminal of which may be connected to the sense line, the second reference voltage may be input to a non-inverting input terminal of which, an output terminal of which may be connected to a buffer transistor; and the buffer transistor, the gate of which may be connected to the output terminal of the buffer amplifier, the first electrode of which may be connected to the sensing line, and the second electrode of which may be connected to the current transfer unit.
According to one or more embodiments of the present invention, the current buffer may further include: a buffer switch connected between the sensing line and an output terminal of the buffer amplifier, the buffer switch being turned on in synchronization with a timing for resetting a source node of the pixel to the second reference voltage.
According to one or more embodiments of the present invention, the second reference voltage may be set to be substantially equal to the first reference voltage.
According to one or more embodiments of the present invention, an output voltage applied to an output terminal of the integrating amplifier may be changed in an up direction based on the first reference voltage.
Another aspect of the present invention provides an organic light emitting display device including: a display panel provided with a plurality of pixels and a plurality of sensing lines connected to the pixels; the data driving circuit comprises the current sensing device, and the current sensing device is connected to each sensing line through a sensing channel; and a timing controller configured to compensate digital image data to be written to the display panel based on the digital sensing value input from the sensing unit.
According to one or more embodiments of the present invention, a plurality of data lines and sensing lines and a plurality of gate lines may cross each other on the display panel, and the plurality of pixels for sensing may be arranged in a matrix form to form a pixel array, and each pixel may be connected to one of the data lines, one of the sensing lines, and one of the gate lines.
According to one or more embodiments of the present invention, the organic light emitting display device may further include a gate driving circuit generating a scan control signal and a sensing control signal suitable for an image display operation and an external compensation operation based on the gate control signal and supplying the scan control signal and the sensing control signal to different gate lines or the same gate line.
According to one or more embodiments of the present invention, the timing controller may generate a data control signal for controlling an operation timing of the data driving circuit and a gate control signal for controlling an operation timing of the gate driving circuit, may temporarily separate a period in which the image display operation is performed and a period in which the external compensation operation is performed, and may generate the control signal for the image display operation and the control signal for the external compensation operation.
According to one or more embodiments of the present invention, each pixel may include an OLED and a driving TFT, wherein the timing controller may receive the digital sensing value from the data driving circuit, correct input image data based on the digital sensing value to compensate for a degradation deviation of the driving TFT or the OLED between the pixels, and transfer the corrected digital image data to the data driving circuit during a period in which the image display operation is performed.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. In the drawings:
fig. 1 is a block diagram illustrating an organic light emitting display device according to an embodiment of the present invention.
Fig. 2 shows a connection configuration of a data driving circuit and a pixel array including the current sensing device of the present invention.
Fig. 3 shows a connection configuration of pixels constituting a pixel array.
Fig. 4 shows another connection configuration of pixels constituting a pixel array.
Fig. 5 shows a configuration of a sensing unit for implementing the current sensing apparatus according to the present invention.
Fig. 6 shows a configuration of another sensing unit for implementing the current sensing apparatus according to the present invention.
Fig. 7 shows an output waveform of the current integrator when a charge (source charge) is supplied to the current integrator.
Fig. 8 shows an output waveform of the current integrator when the charge is absorbed from the current integrator (sink charge).
Detailed Description
Advantages and features of the present invention and methods of accomplishing the same may be understood more readily by reference to the following detailed description of exemplary embodiments and the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these exemplary embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art, and the present invention will be defined by the appended claims.
Shapes, sizes, percentages, angles, numbers, etc., shown in the drawings for the purpose of describing exemplary embodiments of the present invention are merely illustrative and not limited to those shown in the drawings. Like reference numerals refer to like elements throughout the specification. Where the terms "comprising," "having," "including," and the like are used, additional components may be added as long as "only" is not used.
Although not explicitly described, elements may be construed as including margin of error.
Where the terms "on … …", "above … …", "below … …" or "after … …" are used to describe a positional relationship between two moieties, one or more other moieties may be disposed between the two moieties unless "immediately" or "directly" is used.
It will be understood that, although the terms first, second, etc. may be used to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element referred to below could be a second element within the scope of the invention.
Like reference numerals refer to substantially the same elements throughout the specification.
In this specification, the pixel circuit and the gate driver formed on the substrate of the display panel may be implemented by the TFT of the n-type MOSFET structure, but the present invention is not limited thereto, and the pixel circuit and the gate driver may also be implemented by the TFT of the p-type MOSFET structure. A TFT or transistor is a three-electrode element comprising a gate, a source and a drain. The source is an electrode for supplying carriers to the transistor. Carriers flow from the source within the TFT. The drain is the electrode from which carriers exit the TFT. That is, carriers in the MOSFET flow from the source to the drain. In the case of an n-type MOSFET NMOS, since carriers are electrons, the source voltage has a voltage lower than the drain voltage, so that electrons can flow from the source to the drain. In an n-type MOSFET, the current direction is from drain to source, since electrons flow from source to drain. On the other hand, in the case of a p-type MOSFET PMOS, since carriers are holes, the source voltage has a voltage higher than the drain voltage, so that holes can flow from the source to the drain. In a p-type MOSFET, the current direction is from source to drain, since holes flow from source to drain. It should be noted that the source and drain of the MOSFET are not fixed. For example, the source and drain of a MOSFET may vary depending on the applied voltage. Therefore, in the specification of the present invention, one of the source electrode and the drain electrode is referred to as a first electrode, and the other of the source electrode and the drain electrode is referred to as a second electrode.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following embodiments, an electroluminescent display device will be mainly described with respect to an organic light emitting display device including an organic light emitting material. However, the present invention is not limited to the organic light emitting display device, but may be applied to an inorganic light emitting display device including an inorganic light emitting material.
In describing the present invention, a detailed description of known functions or configurations related to the present invention will be omitted to avoid unnecessarily obscuring the present invention.
Fig. 1 is a block diagram illustrating an organic light emitting display device according to an embodiment of the present invention. Fig. 2 shows a connection configuration of a data driving circuit and a pixel array including the current sensing device of the present invention. Fig. 3 and 4 show various connection configurations of pixels constituting a pixel array.
Referring to fig. 1 to 4, an organic light emitting display device according to an embodiment of the present invention may include a display panel 10, a timing controller 11, a data driving circuit 12, and a gate driving circuit 13. The data driving circuit 12 includes a current sensing circuit or current sensing device 122 according to an embodiment of the present invention. The display panel 10 is provided with a plurality of pixels P and a plurality of sensing lines 16 connected to the pixels P.
Specifically, a plurality of data lines 16 and sensing lines 16 and a plurality of gate lines 15 cross each other on the display panel 10, and pixels P for sensing are arranged in a matrix form to form a pixel array. As shown in fig. 4, the plurality of gate lines 15 may include a plurality of first gate lines 15A and a plurality of second gate lines 15B, wherein the SCAN control signal SCAN is supplied to the first gate lines 15A, and the sensing control signal SEN is supplied to the second gate lines 15B. When the SCAN control signal SCAN and the sensing control signal SEN have the same phase as each other, the first gate line 15A and the second gate line 15B may be unified into one gate line 15 as shown in fig. 3.
Each pixel P may be connected to one of the data lines 14, one of the sensing lines 16, and one of the gate lines 15. The pixels P constituting the pixel array may include a red pixel for displaying red, a green pixel for displaying green, a blue pixel for displaying blue, and a white pixel for displaying white. Four pixels including a red pixel, a green pixel, a blue pixel, and a white pixel may constitute one pixel unit UPXL. However, the configuration of the pixel unit UPXL is not limited thereto. A plurality of pixels P constituting the same pixel unit UPXL may share one sensing line 16. Although not shown in the drawings, a plurality of pixels P constituting the same pixel unit UPXL may be independently connected to different sensing lines. Each pixel P receives a high supply voltage EVDD and a low supply voltage EVSS from a power generator.
As shown in fig. 3 and 4, the pixel according to the present invention may include an OLED, a driving TFT DT, a storage capacitor Cst, a first switching TFT ST1, and a second switching TFT ST2, but is not limited thereto. The TFT may be implemented by a p-type, an n-type, or a hybrid type in which p-type and n-type are mixed. The semiconductor layer of the TFT may include amorphous silicon, polysilicon, or oxide.
OLEDs are light emitting elements. The OLED may include an anode connected to the source node Ns, a cathode connected to an input terminal of the low power supply voltage EVSS, and an organic compound layer between the anode and the cathode. The organic compound layer may include a Hole Injection Layer (HIL), a Hole Transport Layer (HTL), an emission layer (EML), an Electron Transport Layer (ETL), and an Electron Injection Layer (EIL).
The driving TFT DT controls the magnitude of current flowing from the source electrode to the drain electrode to be input to the OLED according to the voltage difference Vgs between the gate electrode and the source electrode. The driving TFT DT includes a gate connected to the gate node Ng, a drain connected to an input terminal of the high power supply voltage EVDD, and a source connected to the source node Ns. The storage capacitor Cst is connected between the gate node Ng and the source node Ns to maintain the voltage Vgs between the gate and source electrodes of the driving TFT DT for a period of time. The first switching TFT ST1 switches the electrical connection between the data line 14 and the gate node Ng according to the SCAN control signal SCAN. The first switching TFT ST1 includes a gate electrode connected to the first gate line 15A, a first electrode connected to the data line 14, and a second electrode connected to the gate node Ng. The second switching TFT ST2 switches the electrical connection between the sensing line 16 and the source node Ns according to the sensing control signal SEN. The second switching TFT ST2 is provided with a gate electrode connected to the second gate line 15B, a first electrode connected to the sensing line 16, and a second electrode connected to the source node Ns.
The first gate line 15A and the second gate line 15B may be unified into one gate line 15 (refer to fig. 3). In this case, the SCAN control signal SCAN and the sensing control signal SEN may have the same phase.
An organic light emitting display device having such a pixel array employs an external compensation method. The external compensation method senses a driving characteristic of the organic light emitting diode OLED and/or the driving TFT and compensates input image data according to the sensed value. The driving characteristic of the OLED refers to an operating point voltage of the OLED. The driving characteristics of the driving TFT include a threshold voltage and electron mobility of the driving TFT.
The organic light emitting display device of the present invention performs an image display operation and an external compensation operation. The external compensation operation may be performed in a vertical blank interval during an image display operation, in a power-on sequence before the start of image display, or in a power-off sequence after the end of image display. The vertical blanking interval is a period in which image data is not written and is located between vertical effective intervals in which image data is written. The power-on sequence refers to a period immediately before an image is displayed after the driving power is applied. The power-off sequence refers to a period immediately before the drive power is turned off after the termination of image display.
The timing controller 11 generates a data control signal DDC for controlling the operation timing of the data driving circuit 12 and a gate control signal GDC for controlling the operation timing of the gate driving circuit 13 based on timing signals such as a vertical synchronization signal Vsync, a horizontal synchronization signal Hsync, a dot clock signal DCLK, a data enable signal DE, and the like. The timing controller 11 may temporarily separate a period in which an image display operation is performed and a period in which an external compensation operation is performed, and generate control signals DDC and GDC for the image display operation and control signals DDC and GDC for the external compensation operation.
The gate control signal GDC may include a Gate Start Pulse (GSP), a Gate Shift Clock (GSC), and the like. The Gate Start Pulse (GSP) is applied to a gate stage (gate state) generating a first scan signal to control the gate stage to generate the first scan signal. The Gate Shift Clock (GSC) is commonly provided to the plurality of gate stages to shift the Gate Start Pulse (GSP).
The data control signal DDC includes a Source Start Pulse (SSP), a Source Sampling Clock (SSC), a source output enable Signal (SOE), and the like. The Source Start Pulse (SSP) controls a data sampling start timing of the data driving circuit 12. The Source Sampling Clock (SSC) controls sampling timing of data in the respective source driver ICs based on a rising edge or a falling edge. The source output enable Signal (SOE) controls the output timing of the data driving circuit 12. The data control signal DDC may further include various signals for controlling the operation of the current sensing device 122 included in the data driving circuit 12.
The timing controller 11 receives the digital sensing value SD based on the external compensation operation from the data driving circuit 12. The timing controller 11 may correct the input image DATA based on the digital sensing value SD to compensate for a deterioration deviation of the driving TFT or OLED between the pixels. The timing controller 11 transfers the corrected digital image DATA to the DATA driving circuit 12 in the image display period.
The data driving circuit 12 may include at least one source driver Integrated Circuit (IC). The source driver IC may include a latch array (not shown), a plurality of digital-to-analog converters (DACs) 121 connected to the data lines 14, and a current sensing device 122 connected to each of the sense lines 16 through a sense channel. The current sensing device 122 includes a plurality of sensing units SU. The timing controller 11 is configured to compensate digital image data to be written to the display panel 10 based on digital sensing values input from the sensing units SU.
The latch array latches the digital image DATA input from the timing controller 11 based on the DATA control signal DDC and supplies it to the DAC. When performing an image display operation, the DAC converts the digital image DATA input from the timing controller 11 into a DATA voltage for display and supplies it to the DATA lines 14. When the external compensation operation is performed, the DAC may generate a data voltage for sensing at a certain level and supply it to the data line 14.
Each sensing unit SU functions to convert a pixel current input through a sensing line into a digital sensing value SD. Each sensing unit SU may be implemented as a current sensing type including a current integrator. Each sensing unit SU includes a current transfer unit to prevent noise amplification from occurring in the current integrator. The current transfer unit separates the electrical connection between the sensing line 16 and the current integrator to prevent amplification of noise mixed into the first reference voltage of the current integrator. In addition, each sensing unit SU further includes a current buffer connected between the sensing line 16 and the current transmitting unit. When the external compensation operation is performed, the current buffer applies a second reference voltage to the source node Ns of the pixel P in order to maintain a constant current input to the driving element included in the corresponding pixel P. The sensing unit constituting the current sensing apparatus will be described in detail later with reference to fig. 5 to 8.
The gate driving circuit 13 generates a SCAN control signal SCAN suitable for an image display operation and an external compensation operation based on the gate control signal GDC and supplies it to the first gate line 15A. Further, the gate driving circuit 13 generates a sensing control signal SEN suitable for an image display operation and an external compensation operation based on the gate control signal GDC and supplies it to the second gate line 15B. Alternatively, the gate driving circuit 13 may generate the SCAN control signal SCAN and the sensing control signal SEN of the same phase suitable for the image display operation and the external compensation operation based on the gate control signal GDC and supply them to the gate lines 15.
Fig. 5 shows a configuration of a sensing unit for implementing the current sensing apparatus according to the present invention.
Referring to fig. 5, the sensing unit SU constituting the current sensing apparatus according to the present invention includes a current integrator CI and a current transfer unit CCVE.
The current integrator CI is equipped with an integrating amplifier AMP1, and the integrating amplifier AMP1 includes an inverting input terminal (-), a non-inverting input terminal (+) and an output terminal. The feedback capacitor Cfb is connected between the inverting input terminal (-) and the output terminal of the integrating amplifier AMP1, and the first reference voltage VR1 is input to the non-inverting input terminal (+) of the integrating amplifier AMP 1. The integrating switch RST-CI is further connected between the inverting input terminal (-) and the output terminal of the integrating amplifier AMP 1. The integrating switch RST-CI initializes the feedback capacitor Cfb by discharging the feedback capacitor Cfb. The sink current K × Ipix flows out from the inverting input terminal (-) of the integrating amplifier AMP1 through the current transfer unit CCVE. The output voltage Vout applied to the output terminal of the integrating amplifier AMP1 changes corresponding to the sink current K × Ipix. That is, the output voltage Vout applied to the output terminal of the integrating amplifier AMP1 is changed in the rising direction based on the first reference voltage VR1 by the sink current K × Ipix flowing out from the inverting input terminal (-) of the integrating amplifier AMP 1. If the output voltage Vout is designed to change in the rising direction based on the first reference voltage VR1, there are many advantages including ensuring a wide sensing range. This will be further described with reference to fig. 8.
The current transfer unit CCVE is connected between the sense line 16 through which the pixel current Ipix flows and the current integrator CI. In the case where there is no current transfer unit CCVE, the output voltage noise Vout _ noise is represented by the noise VR1_ noise mixed into the first reference voltage VR1 using equation 1.
[ equation 1]
Vout_noise＝(1+Cline/Cfb)*VR1_noise
In equation 1, Cline is the parasitic capacitance present in the sense line, which is much larger than the capacitance Cfb of the feedback capacitor. Specifically, in the equation C × V × I × t, the product of the capacitance C of the feedback capacitor and the output voltage V is equal to the product of the input current I and the sensing time t. When the sensing time and the capacitance of the feedback capacitor are set, the pixel current can be measured by the change of the output voltage. Since the magnitude of the pixel current is very small in a display device having high resolution, the capacitance of the feedback capacitor should be reduced in order to ensure that the sensing time and the output voltage are constant. Therefore, in the case of not having the current transfer unit CCVE, the noise VR1_ noise mixed into the first reference voltage VR1 has to be amplified with the capacitance ratio Cline/Cfb. Due to this amplified noise VR1_ noise, the pixel current Ipix cannot be accurately sensed.
The current transfer unit CCVE separates the electrical connection between the sense line 16 and the current integrator CI to prevent amplification of noise mixed into the first reference voltage VR 1. In this case, the noise Vout _ noise based on the noise VR1_ noise mixed into the first reference voltage VR1 in the output voltage is the same as equation 2.
[ equation 2]
Vout_noise＝(1+0/Cfb)*VR1_noise＝VR1_noise
As shown in equation 2, the output voltage noise Vout _ noise does not become larger than the noise VR1_ noise mixed into the first reference voltage VR 1.
Further, the current transfer unit CCVE plays a role of preventing the panel noise component input from the sensing line 16 from being input into the current integrator CI.
The current transfer unit CCVE causes a sink current K × Ipix equal to or larger than the pixel current Ipix to be output from the inverting input terminal (-) of the integrating amplifier AMP1 by mirroring (mirroring) the pixel current Ipix. The current transfer unit CCVE includes a first mirror transistor M1 and a second mirror transistor M2 for current mirroring. The gate and the first electrode of the first mirror transistor M1 are connected to a common node Nx to which the pixel current Ipix is applied, and the second electrode of the first mirror transistor M1 is connected to the ground voltage source GND. The gate of the second mirror transistor M2 is connected to the shared node Nx, the first electrode of the second mirror transistor M2 is connected to the inverting input terminal (-) of the integrating amplifier AMP1, and the second electrode of the second mirror transistor M2 is connected to the ground voltage source GND. When the pixel current Ipix is applied to the common node Nx, the pixel current sinks (sink) to the ground voltage source GND through the first mirror transistor M1. At this time, the sink current K × Ipix sinks to the ground voltage source GND through the second mirror transistor M2 by the current mirror process. The sinking current K × Ipix may be equal to or different from the pixel current Ipix. The sinking current K × Ipix may be greater than or less than the pixel current Ipix. In the case where the sink current K × Ipix is larger than the pixel current Ipix, the channel capacitance (channel width/channel length) of the second mirroring transistor M2 may be designed to be larger than the channel capacitance of the first mirroring transistor M1. In case the sinking current K × Ipix is equal to the pixel current Ipix, the channel capacitance of the second mirror transistor M2 may be designed to be substantially equal to the channel capacitance of the first mirror transistor M1. In the case where the sink current K × Ipix is smaller than the pixel current Ipix, the channel capacitance (channel width/channel length) of the second mirroring transistor M2 may be designed to be smaller than the channel capacitance of the first mirroring transistor M1.
When the current transfer unit CCVE causes the sink current K × Ipix larger than the pixel current Ipix to be output from the inverting input terminal (-) of the integrating amplifier AMP1, it is not necessary to reduce the capacitance of the feedback capacitor in the current integrator CI. That is, since the current integrator CI can include a feedback capacitor having a large capacitance under the condition of having the same sensing voltage and output voltage, the most problematic noise problem when sensing a low current can be solved.
Referring to fig. 5, the sensing unit SU constituting the current sensing apparatus according to the present invention further includes a current buffer CBUF connected between the sensing line 16 and the current transfer unit CCVE.
The current buffer CBUF applies the second reference voltage VR2 to the pixel P through which the pixel current Ipix flows to fix the voltage of the source node Ns of the pixel P to be constant, thereby allowing an electrostatic current to flow through the driving element DT of the pixel P. The current buffer CBUF includes a buffer amplifier AMP2 and a buffer transistor T1.
The inverting input terminal (-) of the buffer amplifier AMP2 is connected to the sense line 16, and the second reference voltage VR2 is input to the non-inverting input terminal (+) of the buffer amplifier AMP 2. The output terminal of the buffer amplifier AMP2 is connected to the buffer transistor T1. A gate of the buffer transistor T1 is connected to the output terminal of the buffer amplifier AMP2, a first electrode of the buffer transistor T1 is connected to the sense line 16, and a second electrode of the buffer transistor T1 is connected to the shared node Nx of the current transfer unit CCVE.
The current buffer CBUF transfers the pixel current Ipix input from the sensing line 16 to the current transfer unit CCVE without signal attenuation. In order to accurately perform current amplification at the current transfer unit CCVE (in case the sink current K × Ipix is larger than the pixel current Ipix), the second reference voltage VR2 of the buffer amplifier AMP2 may be set substantially equal to the first reference voltage VR1 of the current integrator CI (including design errors). However, in the case where the current transfer unit CCVE performs the simple mirroring process (in the case where the sink current K × Ipix is equal to the pixel current Ipix), the first reference voltage VR1 and the second reference voltage VR2 may be set to be the same.
Fig. 6 shows a configuration of another sensing unit for implementing the current sensing apparatus according to the present invention.
Referring to fig. 6, another sensing unit SU constituting the current sensing apparatus according to the present invention includes a current integrator CI and a current transfer unit CCVE, and may further include a current buffer CBUF.
The current integrator CI and the current transfer unit CCVE of fig. 6 are substantially identical to those of fig. 5. Furthermore, the current buffer CBUF of fig. 6 is also the same as that of fig. 5, except for the buffer switch RST-BUF.
The buffer switch RST-BUF is connected between the sensing line 16 and the output terminal of the buffer amplifier AMP2, and is turned on in synchronization with a timing for resetting the source node Ns of the pixel P to the second reference voltage VR 2.
The buffer amplifier AMP2 applies a second reference voltage VR2 to the source node Ns of the pixel P according to a virtual ground principle. In this case, it takes a long time to reset the source node Ns of the pixel P to the second reference voltage VR2 because the parasitic capacitance Cline of the sensing line is large. The buffer switch RST-BUF functions to reduce the time required to reset the source node Ns of the pixel P to the second reference voltage VR 2.
FIG. 7 shows the output waveform of the current integrator when charge is supplied to the current integrator; fig. 8 shows the output waveform of the current integrator when the charge is absorbed from the current integrator.
In order to reduce power consumption and improve efficiency, a light emitting element OLED having a low operating point voltage (threshold voltage) is employed in an organic light emitting display device. In the conventional sensing unit, the current integrator CI is directly connected to the sensing line 16, and a pixel current flowing through the driving element DT of the pixel P is sensed after the source node Ns of the pixel P is reset to the first reference voltage VR1 of the current integrator CI. Here, if the voltage of the source node Ns is higher than the operating point voltage of the light emitting element OLED, the pixel current to be sensed mostly flows into the light emitting element OLED, and thus the pixel current cannot be sensed. To avoid this, the first reference voltage VR1 of the current integrator CI must be set lower than the operating point voltage of the light emitting element OLED. At this time, since the conventional sensing unit adopts a charge supplying method, that is, a method of sensing a pixel current input to the inverting input terminal of the current integrator, the output voltage Vout is changed in a direction in which the output voltage is lowered with respect to the first reference voltage VR1, so that a sensing range becomes narrow as shown in fig. 7. If the sensing range is narrow, it is difficult to achieve accurate sensing.
In contrast to this, since the sensing unit according to the present invention employs a charge sinking method, i.e., a method of sensing a sinking current flowing out of the inverting input terminal (-) of the current integrator CI, the output voltage Vout is changed in a direction in which the output voltage rises with respect to the first reference voltage VR1, and as a result, the sensing range is widened as shown in fig. 8. That is, the present invention can secure a wide sensing range even if the first reference voltage VR1 is set to be low in consideration of the operating point voltage of the light emitting element OLED. If the sensing range is wide, the sensed value can be prevented from being saturated near the boundary of the sensing range, and the sensing accuracy is easily improved.
As described above, by connecting the current transfer unit between the sensing line and the current integrator, the present invention can reduce the parasitic capacitance component that functions as the amplification ratio of the current integrator. Even if a low current is sensed, the present invention can cause the amplified absorption current to be output from the current integrator through a mirroring process in the current transfer unit, so that a feedback capacitor having a large capacitance can be designed in the current integrator, solving the most problematic noise problem in sensing a low current.
In addition, the present invention further includes a current buffer connected between the sensing line and the current transmitting unit to constantly fix a voltage of the source node of the pixel to a reference voltage of the current buffer, thereby allowing an electrostatic current to flow through the driving element of the pixel and improving sensing accuracy.
In addition, by adding a buffer switch to the current buffer (the buffer switch directly connects the output terminal of the buffer amplifier to the sense line), the present invention can reduce the time required to reset the source node of the pixel to the reference voltage of the current buffer.
Throughout the description, it will be understood by those of ordinary skill in the art that various changes and modifications are possible without departing from the technical principle of the present invention. Therefore, the technical scope of the present invention is not limited to the specific description in the present specification, but should be defined by the scope of the appended claims.

Claims (10)

1. A current sensing apparatus comprising a plurality of sensing cells, each sensing cell for converting a pixel current input through a sensing line into a digital sensing value, and each sensing cell comprising:
a current integrator including an integrating amplifier including an inverting input terminal, a non-inverting input terminal, and an output terminal, and a feedback capacitor connected between the inverting input terminal and the output terminal, a first reference voltage being input to the non-inverting input terminal;
a current transfer unit connected between the sensing line and the current integrator to separate an electrical connection between the sensing line and the current integrator; and
a current buffer connected between the sensing line and the current transmitting unit, the current buffer for applying a second reference voltage to a pixel through which the pixel current flows to fix a voltage of a source node of the pixel to be constant,
wherein the current transfer unit performs mirroring of the pixel current and causes the mirrored current to be output from an inverting input terminal of the integrating amplifier,
wherein the current buffer comprises:
a buffer amplifier having an inverting input terminal connected to the sense line, the second reference voltage input to a non-inverting input terminal of the buffer amplifier, an output terminal of the buffer amplifier connected to a buffer transistor;
the gate of the buffer transistor is connected to the output terminal of the buffer amplifier, the first electrode of the buffer transistor is connected to the sensing line, and the second electrode of the buffer transistor is connected to the current transmission unit; and
a buffer switch connected between the sensing line and an output terminal of the buffer amplifier, the buffer switch being turned on in synchronization with a timing for resetting a source node of the pixel to the second reference voltage.
2. The current sensing device of claim 1, wherein the current transfer unit comprises:
a first mirror transistor having a gate and a first electrode connected to a shared node to which the pixel current is applied, and a second electrode connected to a ground voltage source; and
a second mirror transistor having a gate connected to the shared node, a first electrode connected to the inverting input terminal of the integrating amplifier, and a second electrode connected to a ground voltage source.
3. The current sensing device of claim 2, wherein the mirrored current is greater than the pixel current, and a channel capacitance of the second mirror transistor is greater than a channel capacitance of the first mirror transistor.
4. The current sensing device of claim 1, wherein the second reference voltage is set substantially equal to the first reference voltage.
5. The current sensing device of claim 1, wherein an output voltage applied to an output terminal of the integrating amplifier changes in a rising direction based on the first reference voltage.
6. An organic light emitting display device comprising:
a display panel provided with a plurality of pixels and a plurality of sensing lines connected to the pixels;
a data drive circuit comprising a current sensing device according to any of claims 1-5 connected to each sense line by a sense channel; and
a timing controller configured to compensate digital image data to be written to the display panel based on the digital sensing value input from the sensing unit.
7. The organic light emitting display device of claim 6, wherein a plurality of data lines and sensing lines and a plurality of gate lines cross each other on the display panel, the plurality of pixels for sensing are arranged in a matrix form to form a pixel array, each pixel is connected to one of the data lines, one of the sensing lines, and one of the gate lines.
8. The organic light emitting display device of claim 6, further comprising a gate driving circuit generating a scan control signal and a sensing control signal suitable for an image display operation and an external compensation operation based on the gate control signal and supplying the scan control signal and the sensing control signal to different gate lines or the same gate line.
9. The organic light emitting display device of claim 8, wherein the timing controller generates a data control signal for controlling an operation timing of the data driving circuit and a gate control signal for controlling an operation timing of the gate driving circuit, temporarily separates a period in which the image display operation is performed and a period in which the external compensation operation is performed, and generates a control signal for the image display operation and a control signal for the external compensation operation.
10. The organic light emitting display device of claim 9, wherein each pixel includes an OLED and a driving TFT, wherein the timing controller receives the digital sensing value from the data driving circuit, modifies input image data based on the digital sensing value to compensate for a degradation deviation of the driving TFT or the OLED between the pixels, and transfers the modified digital image data to the data driving circuit during a period in which the image display operation is performed.
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US11588993B2 (en) 2023-02-21

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