CN110957632A - Micro-channel heat sink for improving semiconductor laser array spectrum half-width - Google Patents
Micro-channel heat sink for improving semiconductor laser array spectrum half-width Download PDFInfo
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- CN110957632A CN110957632A CN201911267011.5A CN201911267011A CN110957632A CN 110957632 A CN110957632 A CN 110957632A CN 201911267011 A CN201911267011 A CN 201911267011A CN 110957632 A CN110957632 A CN 110957632A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a micro-channel heat sink for improving the spectrum half-width of a semiconductor laser array, which comprises: the bottom layer, the liquid inlet and outlet layer, the isolation layer, the heat exchange layer and the top layer are sequentially arranged from bottom to top; the surface of the top layer is used for mounting a semiconductor laser array, the heat exchange layer is provided with a micro-channel array which is transversely distributed below a semiconductor laser array mounting area, the micro-channel array is gradually and densely distributed from the rear cavity surface to the front cavity surface of the semiconductor laser array, and the liquid flow direction of the micro-channel array flows from the middle to two sides of the micro-channel array along the slow axis direction of the semiconductor laser array. The structural design of the microchannel heat sink reduces the water resistance of the microchannel heat sink, so that the overall heat dissipation performance of the semiconductor laser array is improved, the temperature distribution of the two sides and the middle part is uniform, the purpose of uniform heat dissipation is achieved, and the spectrum half-width of the semiconductor laser is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectron, in particular to a microchannel heat sink for improving the spectrum half-width of a semiconductor laser array.
Background
The microchannel heat sink is part of a modular microchannel refrigerator (MCC). The MCC is a refrigeration unit commonly used in semiconductor device packages, particularly packages for stacked arrays of high power semiconductor lasers.
Since the semiconductor laser array is a high power chip and is formed by a plurality of light emitting unit arrays, a large amount of heat is generated during operation, and thus the heat may reach up to 106W/m2The difference of heat dissipation capacity can lead to great difference in temperature under the thermal current density of the magnitude of heat, high thermal current density, because middle luminescence unit can receive the thermal crosstalk of both sides luminescence unit, therefore lead to middle temperature to be higher than both sides, semiconductor laser spectral red shift phenomenon appears, and then lead to different luminescence unit spectra and beam stack to lead to the laser photoelectric characteristic variation, spectrum half width increase.
Disclosure of Invention
In view of the above technical problems, the present invention provides a micro-channel heat sink for improving the half-width of the spectrum of a semiconductor laser array, so as to solve or partially solve the above problems.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention discloses a microchannel heat sink for improving the spectrum half-width of a semiconductor laser array, which comprises: the bottom layer, the liquid inlet and outlet layer, the isolation layer, the heat exchange layer and the top layer are sequentially arranged from bottom to top;
the heat exchange layer is provided with a micro-channel array which is transversely distributed, the micro-channel array is gradually and densely distributed from the rear cavity surface to the front cavity surface of the semiconductor laser array, and the liquid of the micro-channel array flows to the two sides from the middle of the micro-channel array along the slow axis direction of the semiconductor laser array.
Preferably, the layers of the microchannel heat sink are etched into the desired pattern photochemically, and the layers of the microchannel heat sink are oxygen-free copper materials and are welded into a whole by diffusion welding or pre-plating solder.
Preferably, the thickness of each layer of the microchannel heat sink is the same or different, the thickness of each layer is 0.24-1mm, and the total thickness is 1.2-5 mm.
Preferably, the width of the channel of the micro-channel array is 0.3-0.5mm, and the width of the channel ridge of the micro-channel array is 0.25-0.5 mm.
Preferably, the microchannel array has a channel width of 0.4 mm.
Preferably, the micro-channel array is distributed in an arc-shaped transverse direction, the width of the channel ridge between each channel of the micro-channel array increases progressively along the front cavity surface of the semiconductor laser array with equal difference of 0.05mm, and the width of the heat dissipation area of the micro-channel array is 2.5-5.5 mm.
Preferably, starting from the front cavity surface of the semiconductor laser array, the microchannel array is in an axisymmetric pattern from the middle to two sides, and is nearest to the front end of the microchannel heat sink at the symmetry axis and is 0.3-0.5mm, and the distance between two ends is 0.1mm thicker than the middle.
Preferably, the liquid inlet and outlet layers are provided with longitudinal liquid tanks, the middle liquid tank is a liquid inlet tank and is connected with the liquid inlet hole, and the liquid tanks on the two sides are liquid return tanks and are connected with the liquid return hole;
the middle of the isolation layer is provided with a buffer tank, and the two sides of the isolation layer are provided with an isolation layer return liquid partial pressure flow channel; the flow slowing groove is S-shaped and is upwards communicated with the middle position of the micro-channel array of the heat exchange layer, and the isolation layer liquid return partial pressure flow channel is upwards communicated with the two transverse ends of the micro-channel array of the heat exchange layer.
Preferably, the heat exchange layer is further provided with a heat exchange layer return liquid partial pressure flow channel, and the heat exchange layer return liquid partial pressure flow channel is communicated with a liquid return hole in the heat exchange layer.
Preferably, the width of the fluid region formed by the micro-channel array is smaller than the packaging width of the semiconductor laser array.
In conclusion, the beneficial effects of the invention are as follows:
the microchannel heat sink for improving the spectrum half-width of the semiconductor laser array disclosed by the invention has the advantages that the microchannel arrays which are gradually densely and transversely distributed are arranged on the heat exchange layer, so that cooling liquid can flow from the middle of the microchannel heat sink to two sides, and heat is transferred from the middle to two sides, and further, the effect of uniform heat dissipation of the microchannels is achieved, the purpose of uniform heat dissipation is achieved, and the spectrum half-width of a semiconductor laser is reduced; the solid-liquid exchange area of a heat concentration area at the front end of the chip is increased, and the heat exchange efficiency of the microchannel heat sink is improved; the microchannel heat sink adopts a unique fluid distribution structure, and effectively reduces the water resistance of the microchannel heat sink.
Drawings
FIG. 1 is a schematic diagram of a top layer structure of a micro-channel heat sink for improving a half-width of a semiconductor laser array spectrum according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a half-side structure of a heat exchange layer in a microchannel heat sink for improving a half-width of a spectrum of a semiconductor laser array according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an isolation layer structure in a micro-channel heat sink for improving the half-width of a semiconductor laser array spectrum according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a liquid layer structure in and out of a microchannel heat sink for improving a half-width of a semiconductor laser array spectrum according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a half-side structure of an inlet/outlet liquid layer, an isolation layer and a heat exchange layer in a microchannel heat sink for improving a half-width of a spectrum of a semiconductor laser array according to an embodiment of the present invention.
The reference numerals in the figures have the following meanings: 1. the liquid inlet hole, 2, return liquid hole, 3, screw hole, 4, spacing hole, 5, chip package region, 6, heat exchange layer return liquid partial pressure runner, 8, microchannel, 9, microchannel radian, 10, channel ridge, 11, isolation layer return liquid partial pressure runner, 12, slow runner, 13, liquid inlet groove, 14, return liquid groove, 15, water-proof ridge.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
The technical conception of the invention is as follows: the heat sink structure is more compact through the transverse equal-difference distribution type micro-channel, the heat sink resistance of the micro-channel is further reduced, and the uniformity of the edge temperature and the center temperature of the laser array is improved by controlling the distribution of the fluid area, the slow flow area and the channel.
FIG. 1 is a schematic diagram of a top layer structure of a micro-channel heat sink for improving a half-width of a semiconductor laser array spectrum according to an embodiment of the present invention; FIG. 2 is a schematic diagram of a half-side structure of a heat exchange layer in a microchannel heat sink for improving a half-width of a spectrum of a semiconductor laser array according to an embodiment of the present invention; FIG. 3 is a schematic diagram of an isolation layer structure in a micro-channel heat sink for improving the half-width of a semiconductor laser array spectrum according to an embodiment of the present invention; fig. 4 is a schematic diagram of an inlet/outlet liquid layer structure in a microchannel heat sink for improving a half-width of a spectrum of a semiconductor laser array according to an embodiment of the present invention; fig. 5 is a schematic diagram of a half-side structure of an inlet/outlet liquid layer, an isolation layer and a heat exchange layer in a microchannel heat sink for improving a half-width of a spectrum of a semiconductor laser array according to an embodiment of the present invention.
In one embodiment of the invention, a microchannel heat sink for improving the half-width of a semiconductor laser array spectrum is disclosed, the microchannel heat sink comprising: the bottom layer, the liquid inlet and outlet layer, the isolation layer, the heat exchange layer and the top layer are arranged from bottom to top in sequence. In the five-layer structure, the bottom layer and the top layer play a role in sealing and isolating each micro-channel of the heat sink.
As shown in fig. 1, the top layer surface is used for mounting a semiconductor laser array, and the chip packaging region 5 on the top layer for mounting the semiconductor laser array has a size of 4mmx 10.8mm. As shown in fig. 2, the heat exchange layer is provided with a microchannel array distributed laterally below the semiconductor laser array mounting region, the microchannel array is gradually and densely distributed from the rear cavity surface to the front cavity surface of the semiconductor laser array, and the liquid flow direction of the microchannel array flows along the slow axis direction of the semiconductor laser array from the middle to both sides of the microchannel array. The cooling liquid can flow to both sides from the middle of the microchannel heat sink, so that heat is transferred from the middle to both sides, the effect of uniform heat dissipation of the microchannel is further achieved, the solid-liquid exchange area of a heat concentration area at the front end of the chip is increased, and the heat exchange efficiency of the microchannel heat sink is improved. External liquid enters the microchannel heat sink through the liquid inlet hole 1, flows out through the liquid return hole 2, and can be used by single or multiple microchannel heat sinks through the fixed screw hole 3 and the limiting hole 4.
In one embodiment, the layers of the microchannel heat sink are photochemically etched to the desired pattern, and the layers of the microchannel heat sink are oxygen-free copper materials and are integrally bonded by diffusion bonding or pre-solder plating. The total thickness of each layer of the microchannel heat sink can reach 1.3mm at least, the structure is compact, and the energy density is improved.
In one embodiment, the layers of the microchannel heat sink are the same or different in thickness, each layer being 0.24-1mm thick and having a total thickness of 1.2-5 mm.
In one embodiment, the width of the channels (i.e., the microchannels 8 in FIG. 2) of the microchannel array is 0.3-0.5mm, and the width of the channel ridges 10 of the microchannel array is 0.25-0.5 mm.
In a preferred embodiment, the microchannel array has a channel width of 0.4 mm.
In one embodiment, the micro-channel array is distributed in an arc-shaped transverse direction, the width of the channel ridge 10 among all channels of the micro-channel array increases along the front cavity surface of the semiconductor laser array in an equal difference mode, the difference value is 0.05mm, and the width of the heat dissipation area of the micro-channel array is 2.5-5.5mm, so that the temperature uniformity of the front cavity surface and the back cavity surface of the laser chip is improved. The micro-channel array arrangement with the transverse stepped distribution further increases the heat exchange area of the cooling water and the heat sink and reduces the water resistance.
In one embodiment, starting from the front cavity surface of the semiconductor laser array, the microchannel array is axisymmetric from the middle to both sides, and is 0.3-0.5mm closest to the front end of the microchannel heat sink at the symmetry axis, and the two ends are 0.1mm thicker than the middle. Thus, at the position of the symmetry axis, the micro-channel 8 is closest to the hottest area of the chip, which is beneficial to reducing the temperature difference between the middle and the two sides.
In one embodiment, as shown in fig. 4, the liquid inlet and outlet layers are provided with longitudinal liquid tanks, the middle liquid tank is a liquid inlet tank 13 connected with the liquid inlet hole 1, and the two side liquid tanks are liquid return tanks 14 connected with the liquid return hole 2. A water-proof ridge 15 is arranged between the liquid inlet tank 13 and the liquid return tank 14.
As shown in fig. 3, a buffer tank 12 is arranged in the middle of the isolation layer, and return liquid partial pressure channels 11 of the isolation layer are arranged on both sides of the isolation layer; the flow-slowing groove 12 is S-shaped and is formed by combining two arc-shaped channels with the curvature radius of 1.25mm, the flow-slowing groove is upwards communicated with the middle position of the micro-channel array of the heat exchange layer, and the isolating layer return liquid partial pressure flow channel 11 is upwards communicated with the two transverse ends of the micro-channel array of the heat exchange layer. The shape of the slow flow groove 12 is an S-shape, which can realize discrete slow flow areas, better realize uniform heat distribution, and also can be other curved shapes.
In one embodiment, as shown in fig. 2, the heat exchange layer is further provided with a heat exchange layer return liquid partial pressure flow channel 6, and the heat exchange layer return liquid partial pressure flow channel 6 is communicated with the liquid return hole 2 in the heat exchange layer, so that the cross-sectional area of the water outlet of the microchannel array can be increased, and the water resistance is further reduced.
The flow route of the cooling liquid in the heat sink is as follows: the cooling liquid enters from the liquid inlet hole 1 of the top layer, then flows into the micro-channel 8 of the heat exchange layer through the liquid inlet groove 13 of the liquid inlet and outlet layer and the slow flow groove 12 of the isolation layer, then flows into the isolation layer liquid return partial pressure channel 11 through the micro-channel 8 of the heat exchange layer, and finally flows into the liquid return hole 2 through the heat exchange layer liquid return partial pressure channel 6 of the heat exchange layer and the liquid return groove 14 of the liquid inlet and outlet layer.
In one embodiment, the width of the fluid region formed by the microchannel array is smaller than the package width of the semiconductor laser array. The width range of a fluid area formed by the micro-channel array is 9.6-10.5mm, the width of the fluid area is slightly smaller than the width of the chip packaging area 5, the temperature of two sides of the semiconductor laser array can be improved, and the integral temperature uniformity of the laser is further improved.
In summary, the present invention discloses a microchannel heat sink for improving the half-width of a semiconductor laser array spectrum, the microchannel heat sink comprising: the bottom layer, the liquid inlet and outlet layer, the isolation layer, the heat exchange layer and the top layer are sequentially arranged from bottom to top; the surface of the top layer is used for mounting a semiconductor laser array, the heat exchange layer is provided with a micro-channel array which is transversely distributed below a semiconductor laser array mounting area, the micro-channel array is gradually and densely distributed from the rear cavity surface to the front cavity surface of the semiconductor laser array, and the liquid flow direction of the micro-channel array flows from the middle to two sides of the micro-channel array along the slow axis direction of the semiconductor laser array. The structural design of the microchannel heat sink reduces the water resistance of the microchannel heat sink, improves the overall heat dissipation performance of the semiconductor laser array, and ensures that the temperature distribution at the two sides and the middle part is uniform, thereby achieving the purpose of uniform heat dissipation and further reducing the spectrum half-width of the semiconductor laser.
While the foregoing is directed to embodiments of the present invention, other modifications and variations of the present invention may be devised by those skilled in the art in light of the above teachings. It should be understood by those skilled in the art that the foregoing detailed description is for the purpose of better explaining the present invention, and the scope of the present invention should be determined by the scope of the appended claims.
Claims (10)
1. A microchannel heat sink for improving the spectral half-width of a semiconductor laser array, the microchannel heat sink comprising: the bottom layer, the liquid inlet and outlet layer, the isolation layer, the heat exchange layer and the top layer are sequentially arranged from bottom to top;
the heat exchange layer is provided with a micro-channel array which is transversely distributed, the micro-channel array is gradually and densely distributed from the rear cavity surface to the front cavity surface of the semiconductor laser array, and the liquid of the micro-channel array flows to the two sides from the middle of the micro-channel array along the slow axis direction of the semiconductor laser array.
2. The microchannel heat sink of claim 1 wherein each layer of the microchannel heat sink is photochemically etched to a desired pattern, and wherein each layer of the microchannel heat sink is a copper oxygen free material and is bonded as a unitary body by diffusion bonding or pre-plating with solder.
3. The microchannel heat sink of claim 1, wherein the layers of the microchannel heat sink are the same or different in thickness, each layer being 0.24-1mm thick and having a total thickness of 1.2-5 mm.
4. The microchannel heat sink of claim 1, wherein the microchannel array has a channel width of 0.3-0.5mm and the microchannel array has a channel ridge width of 0.25-0.5 mm.
5. The microchannel heat sink of claim 4, wherein the microchannel array has a channel width of 0.4 mm.
6. The microchannel heat sink of claim 1, wherein the microchannel array is laterally distributed in an arc shape, and the width of the channel ridge increases with an equal difference of 0.05mm backward along the front cavity surface of the semiconductor laser array between each channel of the microchannel array, and the width of the heat dissipation area of the microchannel array is 2.5-5.5 mm.
7. The microchannel heat sink of claim 6, wherein the microchannel array is axisymmetric from the middle to both sides starting from the front facet of the semiconductor laser array, and is 0.3-0.5mm closest to the front end of the microchannel heat sink at the axis of symmetry, and is 0.1mm thicker at both ends than the middle.
8. The microchannel heat sink of claim 1, wherein the liquid inlet and outlet layers are provided with longitudinal liquid tanks, the middle liquid tank is a liquid inlet tank connected to the liquid inlet hole, and the two side liquid tanks are liquid return tanks connected to the liquid return hole;
the middle of the isolation layer is provided with a buffer tank, and the two sides of the isolation layer are provided with an isolation layer return liquid partial pressure flow channel; the flow slowing groove is S-shaped and is upwards communicated with the middle position of the micro-channel array of the heat exchange layer, and the isolation layer liquid return partial pressure flow channel is upwards communicated with the two transverse ends of the micro-channel array of the heat exchange layer.
9. The microchannel heat sink of claim 8, wherein the heat exchange layer is further provided with a heat exchange layer return liquid partial pressure flow channel communicating with a liquid return hole in the heat exchange layer.
10. The microchannel heat sink of claim 1, wherein the microchannel array comprises a fluid zone width that is less than a package width of the semiconductor laser array.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113067249A (en) * | 2021-06-03 | 2021-07-02 | 北京凯普林光电科技股份有限公司 | Semiconductor laser packaging structure |
| CN113659426A (en) * | 2021-07-19 | 2021-11-16 | 中国科学院西安光学精密机械研究所 | Light source chip array heat radiation structure |
| CN113903717A (en) * | 2021-12-09 | 2022-01-07 | 中国科学院西安光学精密机械研究所 | Miniaturized heat dissipation device applied to power chip and semiconductor device |
| CN115275785A (en) * | 2022-09-27 | 2022-11-01 | 潍坊先进光电芯片研究院 | Semiconductor laser array structure |
| CN115332196A (en) * | 2021-05-11 | 2022-11-11 | 中国科学院理化技术研究所 | Integrated heat dissipation chip system and preparation method thereof |
| CN115332926A (en) * | 2022-08-15 | 2022-11-11 | 中国科学院上海光学精密机械研究所 | Reflection-type grating structure integrated with embedded non-uniform micro-channel |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115275785A (en) * | 2022-09-27 | 2022-11-01 | 潍坊先进光电芯片研究院 | Semiconductor laser array structure |
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