CN113903717A - Miniaturized heat dissipation device applied to power chip and semiconductor device - Google Patents
Miniaturized heat dissipation device applied to power chip and semiconductor device Download PDFInfo
- Publication number
- CN113903717A CN113903717A CN202111495779.5A CN202111495779A CN113903717A CN 113903717 A CN113903717 A CN 113903717A CN 202111495779 A CN202111495779 A CN 202111495779A CN 113903717 A CN113903717 A CN 113903717A
- Authority
- CN
- China
- Prior art keywords
- layer
- diversion
- rib plate
- diversion rib
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to a heat dissipation device of a power chip, in particular to a miniaturized heat dissipation device applied to the power chip and a semiconductor device. The technical problems that the conventional power chip heat dissipation device is large in size and not beneficial to system integration are solved. The heat dissipation device comprises an M5 sealing layer, an M4 shunt layer, an M3 diversion layer, an M2 heat exchange layer and an M1 sealing layer which are stacked from bottom to top; the M5 sealing layer is seted up coolant liquid feed hole and coolant liquid outlet hole on M1 sealing layer respectively, and the central axis coincidence in coolant liquid feed hole and coolant liquid outlet hole has reduced heat abstractor's volume greatly, simultaneously through the rationally distributed runner, makes chip surface temperature even. The semiconductor device comprises a power chip and a heat dissipation device, wherein the power chip is welded on the surface of the heat dissipation device, and heat generated by the power chip is dissipated by utilizing cooling liquid flowing in the heat dissipation device. The invention greatly reduces the volume of the heat dissipation device, correspondingly reduces the volume of the semiconductor device and is beneficial to the integrated design.
Description
Technical Field
The invention relates to a heat dissipation device of a power chip, in particular to a miniaturized heat dissipation device applied to the power chip and a semiconductor device.
Background
The heat dissipation device of the power chip is used for dissipating heat generated during the operation of the chip, and the chip is directly welded on the heat dissipation device in a welding mode, so that the size of the heat dissipation device directly influences the total installation volume of the power device. The heat dissipation device of the existing power chip generally adopts a structural form that a cooling liquid inlet and a cooling liquid outlet are arranged in parallel on a plane, and the axes of the cooling liquid inlet and the cooling liquid outlet are parallel to each other. As shown in fig. 1, a chip 01 is soldered on a heat sink 03 by a solder 02, and the heat sink 03 includes a lower sealing lamination, a lower cooling lamination, a flow guiding lamination, an upper cooling lamination and an upper sealing lamination which are stacked from bottom to top. A first water inlet 04 and a first water outlet 05 which are isolated from each other are arranged on the lower sealing lamination; other laminated sheets are provided with structures such as flow guide heat exchange, cooling water enters from the first water inlet 04 and flows out from the first water outlet 05 after flow guide heat exchange. Such heat abstractor is because of coolant liquid import and export distribution in different positions for its volume is great, finally leads to the total installation volume increase of laser instrument, has wasted installation space, is unfavorable for system integration.
Disclosure of Invention
The invention aims to provide a miniaturized heat dissipation device applied to a power chip, wherein a cooling liquid inlet and a cooling liquid outlet are positioned at the same position, so that the volume of the heat dissipation device is greatly reduced, and meanwhile, the surface temperature of the chip is uniform through reasonably arranging flow channels. The technical problems that the conventional power chip heat dissipation device is large in size and not beneficial to system integration are solved.
The technical scheme of the invention is to provide a miniaturized heat dissipation device applied to a power chip, which is characterized in that: the heat exchange layer comprises an M5 sealing layer, an M4 shunt layer, an M3 diversion layer, an M2 heat exchange layer and an M1 sealing layer which are arranged from bottom to top in a laminated manner;
the M5 sealing layer, the M4 shunt layer, the M3 diversion layer, the M2 heat exchange layer and the M1 sealing layer are provided with mutually communicated mounting holes at corresponding positions;
the M5 sealing layer comprises a first area and a second area, wherein the first area is provided with a cooling liquid inlet hole for feeding liquid;
the M4 diversion layer is provided with a first hollowed-out area and a second hollowed-out area which are mutually communicated, the first hollowed-out area corresponds to the position of a cooling liquid inlet hole of the M5 sealing layer and is mutually communicated, the second hollowed-out area is provided with a plurality of diversion rib plates, each diversion rib plate extends along the Y direction, the diversion rib plates are arranged along the X direction, and each diversion rib plate is matched with the second area of the M5 sealing layer to form a plurality of cooling liquid flow channels which extend along the Y direction and are arranged along the X direction; one end of the cooling liquid flow channel, which is close to the first hollow area, is a cooling liquid inlet, and the other end of the cooling liquid flow channel, which is far away from the first hollow area, is a cooling liquid outlet;
the M3 drainage layer is provided with drainage grooves which extend along the X direction, and the bottoms of the drainage grooves correspond to the positions of the cooling liquid outlets of the cooling liquid flow channels and are communicated with each other;
the M2 heat exchange layer is provided with a third hollow-out area and a fourth hollow-out area which are communicated with each other, and the third hollow-out area corresponds to the first hollow-out area of the M4 diversion layer in position; fins are arranged on the fourth hollowed-out area, and the roots of the fins correspond to and are mutually communicated with the drainage grooves in the M3 drainage layer;
the M1 sealant layer includes a third area corresponding to a third hollowed-out area on the M2 heat exchange layer, and a fourth area corresponding to a fourth hollowed-out area on the M2 heat exchange layer; the third area is provided with a cooling liquid outlet hole communicated with the third hollow area; the central axes of the cooling liquid outlet hole and the cooling liquid inlet hole are superposed; the upper surface of the fourth area is a power chip mounting area for mounting a power chip;
the cooling liquid enters from the cooling liquid inlet hole and enters the cooling liquid flow channel through the first hollow area to realize flow distribution; the cooling liquid flowing out of the cooling liquid flow channel flows into the fourth hollowed-out area through the drainage groove, heat exchange is achieved through the fins, and the hot fluid flows out of the cooling liquid outlet hole through the third hollowed-out area to take away heat.
Further, the shape and size of the M5 sealing layer, the M4 shunt layer, the M3 diversion layer, the M2 heat exchange layer and the M1 sealing layer are all the same.
Further, in order to achieve more uniform flow distribution, the length of the flow distribution rib plates in the middle area is greater than the length of the flow distribution rib plates in the two side areas of the M4 flow distribution layer, and the length is the extension length of the flow distribution rib plates in the Y direction.
Furthermore, the diversion rib plates at the two side regions of the M4 diversion layer are symmetrically arranged relative to the diversion rib plate at the most middle region.
Furthermore, the number of the mounting holes in the M5 sealing layer is two, and the mounting holes are positioned on two sides of the cooling liquid inlet hole.
Further, the M5 sealant layer, the M4 diverter layer, the M3 diverter layer, the M2 heat transfer layer, and the M1 sealant layer are all rectangular flat plates.
Furthermore, the coolant liquid outlet hole and the coolant liquid inlet hole are round holes and have the same diameter.
Furthermore, the sizes of the plurality of diversion rib plates along the X direction are the same; the partitions in the fins have the same dimension in the X direction.
Further, the length A4 of the rectangular flat plate is 13mm, the diameter of a coolant inlet hole is 6mm, the dimension A1 of each flow distribution rib plate along the X direction is equal and is 0.20mm, the dimension A5 of the flow distribution rib plate located in the middle area along the Y direction is 6mm, the dimension A2 of the drainage groove along the Y direction is 0.50mm, the dimension A3 of the partition plate in the fin along the X direction is 0.30mm, and the diameter of the mounting hole is 2 mm.
Further, the number of the diversion rib plates is 9, and the diversion rib plates are sequentially defined as a first diversion rib plate, a second diversion rib plate, a third diversion rib plate, a fourth diversion rib plate, a fifth diversion rib plate, a sixth diversion rib plate, a seventh diversion rib plate, an eighth diversion rib plate and a ninth diversion rib plate from left to right; the fifth diversion rib plate is a diversion rib plate located in the middle area, and the sizes of the fourth diversion rib plate and the sixth diversion rib plate along the Y direction are equal and are both 5 mm;
the sizes of the third diversion rib plate and the seventh diversion rib plate along the Y direction are equal and are both 3.5 mm; the sizes of the second diversion rib plate and the eighth diversion rib plate along the Y direction are equal and are both 3 mm; the sizes of the first diversion rib plate and the ninth diversion rib plate along the Y direction are equal and are both 1.9 mm; the distance between two adjacent shunting rib plates is 0.8 mm.
The invention also provides a semiconductor device, which is characterized by comprising a laser chip and the heat dissipation structure, wherein the laser chip is fixed on the upper surface of the fourth region of the sealing layer of the heat dissipation structure M1.
The invention has the beneficial effects that:
1. compared with the traditional heat sink, the central axes of the cooling liquid inlet hole and the cooling liquid outlet hole in the heat dissipation device are superposed and are positioned at the same position of the plane of the heat dissipation device, so that the size of the heat dissipation device is reduced, the system integration is convenient, and meanwhile, the surface temperature of a chip is more uniform through reasonably arranging flow channels.
2. According to the invention, cooling liquid enters from a cooling liquid inlet hole, enters a cooling liquid flow channel through a first hollow-out area, is uniformly distributed, flows into an M2 heat exchange layer through the drainage of an M3 drainage layer, exchanges heat with fins, and flows out from a cooling liquid outlet hole through a third hollow-out area to take away heat. The symmetrical shunting rib plates in the M4 shunting layer play a role in uniformly dispersing fluid; the M2 heat exchange layer fins play a role in enhancing the heat exchange between the fluid and the solid; meanwhile, the symmetrical shunting rib plates in the M4 shunting layer and the fins in the M2 heat exchange layer have a mechanical supporting function, so that the layers cannot be separated due to overlarge internal fluid pressure or the external pressure is applied, and an internal cavity is overlarge and sunken.
Drawings
Fig. 1 is an overall schematic view of a conventional semiconductor device package;
FIG. 2 is a general schematic view of a semiconductor device package of the present invention;
FIG. 3 is an exploded view of the heat dissipation device of the present invention;
FIG. 4 is a schematic structural diagram of an M5 sealant layer in the heat dissipating device of the present invention;
FIG. 5 is a schematic structural diagram of an M4 shunt layer in the heat dissipation device of the present invention;
FIG. 6 is a schematic structural diagram of an M3 current-guiding layer in the heat dissipation device of the present invention;
FIG. 7 is a schematic view of the M2 heat exchange layer of the heat dissipation device of the present invention;
FIG. 8 is a schematic structural diagram of an M1 sealant layer in the heat dissipating device of the present invention;
the reference numbers in the figures are:
01-chip, 02-solder, 03-heat sink, 04-first water inlet, 05-first water outlet;
1-power chip, 2-heat dissipation device, 3-mounting hole;
25-M5 sealing layer, 24-M4 shunt layer, 23-M3 diversion layer, 22-M2 heat exchange layer and 21-M1 sealing layer;
11-third zone, 12-fourth zone, 111-coolant exit hole;
210-third hollowed-out area, 220-fourth hollowed-out area, 221-fin, 2210-fin root;
31-a drainage groove;
41-a first hollowed-out area, 42-a second hollowed-out area, 421-a flow distribution rib plate, 422-a cooling liquid flow channel;
51-first zone, 52-second zone, 53-coolant inlet orifice.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, specific embodiments accompanied with figures are described in detail below, and it is apparent that the described embodiments are a part of the embodiments of the present invention, not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making creative efforts based on the embodiments of the present invention, shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
Furthermore, reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one implementation of the invention. The appearances of the phrase "in other embodiments" in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments.
Furthermore, the present invention is described in detail with reference to the drawings, and in the detailed description of the embodiments of the present invention, the cross-sectional view illustrating the structure of the device is not enlarged partially according to the general scale for convenience of illustration, and the drawings are only exemplary and should not be construed as limiting the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
Meanwhile, in the description of the present invention, it should be noted that the terms "upper, lower, left, right" and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and operate, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first, second, third, or fourth" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
As shown in fig. 2, the semiconductor device of this embodiment includes a power chip 1 and a heat sink 2, the power chip 1 is soldered on the surface of the heat sink 2, and heat generated by the power chip 1 is dissipated by using a cooling liquid flowing in the heat sink 2. As can be seen from the orientation shown in fig. 2, the cooling liquid inlet hole 53 and the cooling liquid outlet hole 111 of the heat dissipation device of the present embodiment are located at the same position, and the central axes of the two holes are coincident. Two mounting holes 3 are arranged on two sides of the cooling liquid outlet hole 111. Compared with the traditional structural form (as shown in figure 1) of arranging the cooling liquid inlet and the cooling liquid outlet in parallel on the plane, the invention greatly reduces the volume of the heat dissipation device, correspondingly reduces the volume of a semiconductor device and is beneficial to integrated design.
As can be seen from fig. 3, the heat dissipation device 2 of this embodiment includes M5 sealing layer 25, M4 shunt layer 24, M3 flow guiding layer 23, M2 heat exchange layer 22, and M1 sealing layer 21, which are equal in shape and size, and M5 sealing layer 25, M4 shunt layer 24, M3 flow guiding layer 23, M2 heat exchange layer 22, and M1 sealing layer 21 are stacked in sequence from bottom to top, and are all rectangular flat plates, and in other embodiments, may also be flat plates with other shapes, such as circular, trapezoidal, and the like. The coolant inlet hole 53 is formed in the M5 sealant 25, and the coolant outlet hole 111 is formed in the M1 sealant 21.
As can be seen from fig. 4, the M5 sealant 25 of the present embodiment includes a first region 51 and a second region 52, and it should be noted that the M5 sealant 25 is divided into the first region 51 and the second region 52 only for the sake of describing a specific location of the coolant inlet hole 53, and there is no obvious boundary between the first region 51 and the second region 52. As can be seen from the orientation shown in fig. 4, the first region 51 is located below and the second region 52 is located above. The coolant inlet hole 53 is opened on the first region 51, while the mounting holes 3 are opened on the left and right sides of the coolant inlet hole 53, near both lower left and lower right corners of the M5 sealing layer 25. In this embodiment, the length direction of the rectangular flat plate may be defined as the Y direction, and the width direction may be defined as the X direction. The length A4 of each rectangular flat plate is 13mm, the diameter of the coolant inlet hole 53 is 6mm, and the diameter phi of the mounting hole 3 is 2 mm.
As can be seen from fig. 5, in the present embodiment, the M4 shunt layer 24 has a first hollow area 41 and a second hollow area 42 that are communicated with each other, and it should be noted that the M4 shunt layer 24 is divided into the first hollow area 41 and the second hollow area 42, which is only for the purpose of describing the specific structure of the M4 shunt layer 24. As can be seen from the orientation shown in fig. 5, the first hollow area 41 is located below and the second hollow area 42 is located above, and the first hollow area 41 is matched with the coolant inlet hole 53 of the M5 sealant 25 in shape, and the central axes of the first hollow area 41 and the second hollow area coincide with each other and are communicated with the coolant inlet hole 53 of the M5 sealant 25. A plurality of flow distribution rib plates 421 are arranged on the second hollow-out area 42, each flow distribution rib plate 421 extends along the Y direction, the plurality of flow distribution rib plates 421 are arranged along the X direction, and each flow distribution rib plate 421 and the second area 52 of the M5 sealing layer 25 are matched to form a plurality of cooling liquid flow channels 422 which extend along the Y direction and are arranged along the X direction; one end of the cooling liquid channel 422 close to the first hollow area 41 is a cooling liquid inlet, and one end far away from the first hollow area 41 is a cooling liquid outlet; in order to split the flow more uniformly, in this embodiment, the length of the splitting rib plate 421 located in the middle area is greater than the length of the splitting rib plates 421 located in the two side areas, where the length is the extension length of the splitting rib plate along the Y direction. The diversion rib plates at the two side areas are symmetrically arranged relative to the diversion rib plate at the most middle area. As can be seen from fig. 5, the present embodiment is provided with 9 diversion rib plates, which are sequentially defined as a first diversion rib plate, a second diversion rib plate, a third diversion rib plate, a fourth diversion rib plate, a fifth diversion rib plate, a sixth diversion rib plate, a seventh diversion rib plate, an eighth diversion rib plate, and a ninth diversion rib plate from left to right; the fifth diversion rib plate is a diversion rib plate located in the middle area, the size A5 along the Y direction is equal to 6mm, and the sizes of the fourth diversion rib plate and the sixth diversion rib plate along the Y direction are equal to 5 mm; the sizes of the third diversion rib plate and the seventh diversion rib plate along the Y direction are equal and are both 3.5 mm; the sizes of the second diversion rib plate and the eighth diversion rib plate along the Y direction are equal and are both 3 mm; the sizes of the first diversion rib plate and the ninth diversion rib plate along the Y direction are equal and are both 1.9 mm. The width and the dimension A1 along the X direction of each shunting rib plate 421 are 0.20mm, and the distance between two adjacent shunting rib plates is 0.8 mm.
As can be seen from fig. 6, in this embodiment, the drainage grooves 31 are formed in the drainage layer 23 of M3, the drainage grooves 31 extend in the X direction, and the bottoms of the drainage grooves 31 correspond to the coolant outlets of the coolant channels 422 and are communicated with each other; from the orientation shown in FIG. 6, the drainage channel 31 can also be described as an elongated through hole opening at the upper edge of M3 drainage layer 23, which extends in the X direction. The width of drainage groove 31, dimension a2 in the Y direction, is 0.50 mm.
As can be seen from fig. 7, in the embodiment, the M2 heat exchange layer 22 is provided with a third hollow area 210 and a fourth hollow area 220 which are communicated with each other, and it should be noted that the M2 heat exchange layer 22 is divided into the third hollow area 210 and the fourth hollow area 220, which is only for convenience of describing a specific structure of the M2 heat exchange layer 22. As can be seen from the orientation shown in fig. 7, the third hollow area 210 is located below and the fourth hollow area 220 is located above. The third hollowed-out area 210 is matched with the first hollowed-out area 41 of the M4 shunt layer 24 in shape and corresponding in position, and the central axes of the two areas coincide; the shape of the fourth hollowed-out area 220 is matched with the shape and the position of the second hollowed-out area 42 in the M4 diversion layer 24, fins 221 are arranged on the fourth hollowed-out area 220, and fin roots 2210 and the drainage grooves 31 in the M3 diversion layer 23 correspond in position and are communicated with each other; the dimension a3 of the spacer in the fin 221 in the X direction is 0.30 mm.
As can be seen from fig. 8, the M1 sealant 21 of the present embodiment includes the third region 11 and the fourth region 12, and it should be noted that the M1 sealant 21 is divided into the third region 11 and the fourth region 12, only for describing the specific structure of the M1 sealant 21 and the specific opening position of the coolant liquid outlet 111, there is no obvious boundary between the third region 11 and the fourth region 12. The third area 11 corresponds to the third hollowed-out area 210 on the M2 heat exchange layer, the fourth area 12 corresponds to the fourth hollowed-out area 220 on the M2 heat exchange layer, and the cooling liquid outlet hole 111 is formed in the third area 11 and communicated with the third hollowed-out area 210; the central axes of the cooling liquid outlet hole 111 and the cooling liquid inlet hole 53 are overlapped; the upper surface of the fourth region 12 is a power chip mounting area for mounting a power chip.
In this embodiment, the cooling liquid enters from the cooling liquid inlet hole 53, and enters the cooling liquid channel 422 through the first hollow area 41, so as to realize flow splitting; the cooling liquid flowing out of the cooling liquid channel 422 flows into the fourth hollow area 220 through the drainage groove 31, heat exchange is realized through the fins 221, and the hot fluid flows out of the cooling liquid outlet hole 111 through the third hollow area 210 to take away heat. Because the diameters of the cooling liquid inlet hole 53 and the cooling liquid outlet hole 111 are the same and the central axes are coincident, the size of the heat dissipation device can be greatly reduced, and meanwhile, the surface temperature of the power chip is more uniform by optimizing the distribution of the cooling liquid flow channels 422 and the shape of the fins 221.
Claims (11)
1. The utility model provides a be applied to miniaturized heat abstractor of power chip which characterized in that: the heat exchange layer comprises an M5 sealing layer (25), an M4 shunt layer (24), an M3 diversion layer (23), an M2 heat exchange layer (22) and an M1 sealing layer (21) which are stacked from bottom to top;
mounting holes (3) which are mutually communicated are formed in corresponding positions on the M5 sealing layer (25), the M4 shunt layer (24), the M3 diversion layer (23), the M2 heat exchange layer (22) and the M1 sealing layer (21);
the M5 sealing layer (25) comprises a first area (51) and a second area (52), and a cooling liquid inlet hole (53) for feeding liquid is formed in the first area (51);
the M4 diversion layer (24) is provided with a first hollowed-out area (41) and a second hollowed-out area (42) which are communicated with each other, the first hollowed-out area (41) corresponds to the position of a cooling liquid inlet hole (53) of the M5 sealing layer (25) and is communicated with the cooling liquid inlet hole, the second hollowed-out area (42) is provided with a plurality of diversion rib plates (421), each diversion rib plate (421) extends along the Y direction, the diversion rib plates (421) are arranged along the X direction, and the diversion rib plates (421) are matched with the second area (52) of the M5 sealing layer (25) to form a plurality of cooling liquid flow channels (422) which extend along the Y direction and are arranged along the X direction; one end of the cooling liquid flow channel (422) close to the first hollow area (41) is a cooling liquid inlet, and the other end of the cooling liquid flow channel far away from the first hollow area (41) is a cooling liquid outlet;
the M3 drainage layer (23) is provided with drainage grooves (31), the drainage grooves (31) extend along the X direction, and the bottoms of the drainage grooves (31) correspond to the positions of the cooling liquid outlets of the cooling liquid flow channels (422) and are communicated with each other;
the M2 heat exchange layer (22) is provided with a third hollowed-out area (210) and a fourth hollowed-out area (220) which are communicated with each other, and the third hollowed-out area (210) corresponds to the first hollowed-out area (41) of the M4 shunting layer (24) in position; a fin (221) is arranged on the fourth hollowed-out area (220), and the root part (2210) of the fin corresponds to and is communicated with the drainage groove (31) on the M3 drainage layer (23);
the M1 sealing layer (21) comprises a third area (11) and a fourth area (12), the third area (11) corresponds to the position of a third hollowed-out area (210) on the M2 heat exchange layer (22), and the fourth area (12) corresponds to the position of a fourth hollowed-out area (220) on the M2 heat exchange layer (22); the third area (11) is provided with a cooling liquid outlet hole (111) communicated with the third hollow area (210); the central axes of the cooling liquid outlet hole (111) and the cooling liquid inlet hole (53) are superposed; the upper surface of the fourth area (12) is a power chip mounting area for mounting a power chip.
2. The miniaturized heat dissipation device applied to a power chip of claim 1, wherein: the shape and the size of the M5 sealing layer (25), the M4 shunt layer (24), the M3 diversion layer (23), the M2 heat exchange layer (22) and the M1 sealing layer (21) are the same.
3. The miniaturized heat dissipation device applied to a power chip of claim 2, wherein:
among the plurality of diversion rib plates (421) of the M4 diversion layer (24), the length of the diversion rib plate positioned in the middle area is greater than that of the diversion rib plates positioned in the two side areas, and the length is the extension length of the diversion rib plate (421) along the Y direction.
4. The miniaturized heat dissipation device applied to a power chip of claim 3, wherein:
the M4 diversion layer (24) is provided with a plurality of diversion rib plates (421), and diversion rib plates at two side areas are symmetrically arranged relative to the diversion rib plate at the most middle area.
5. The miniaturized heat dissipation device applied to a power chip of claim 4, wherein: and two mounting holes (3) in the M5 sealing layer (25) are positioned at two sides of the cooling liquid inlet hole (53).
6. The miniaturized heat dissipation device applied to a power chip of claim 5, wherein:
the M5 sealing layer (25), the M4 shunt layer (24), the M3 diversion layer (23), the M2 heat exchange layer (22) and the M1 sealing layer (21) are all rectangular flat plates.
7. The miniaturized heat dissipation device applied to a power chip of claim 6, wherein:
the cooling liquid outlet hole (111) and the cooling liquid inlet hole (53) are round holes and have the same diameter.
8. The miniaturized heat dissipation device applied to a power chip of claim 7, wherein: the sizes of the plurality of diversion rib plates (421) along the X direction are the same; the size of the partition plates in the fin (221) in the X direction is the same.
9. The miniaturized heat dissipation device applied to a power chip of claim 8, wherein:
the length A4 of the rectangular flat plate is 13mm, the diameter of a cooling liquid inlet hole (53) is 6mm, the dimension A1 of each flow distribution rib plate (421) along the X direction is equal and is 0.20mm, the dimension A5 of the flow distribution rib plate located in the middle area along the Y direction is 6mm, the dimension A2 of the drainage groove (31) along the Y direction is 0.50mm, the dimension A3 of a partition plate in the fin (221) along the X direction is 0.30mm, and the diameter of the mounting hole (3) is 2 mm.
10. The miniaturized heat dissipation device applied to a power chip of claim 9, wherein: the number of the diversion rib plates (421) is 9, and the diversion rib plates are sequentially defined as a first diversion rib plate, a second diversion rib plate, a third diversion rib plate, a fourth diversion rib plate, a fifth diversion rib plate, a sixth diversion rib plate, a seventh diversion rib plate, an eighth diversion rib plate and a ninth diversion rib plate from left to right; the fifth diversion rib plate is a diversion rib plate located in the middle area, and the sizes of the fourth diversion rib plate and the sixth diversion rib plate along the Y direction are equal and are both 5 mm;
the sizes of the third diversion rib plate and the seventh diversion rib plate along the Y direction are equal and are both 3.5 mm; the sizes of the second diversion rib plate and the eighth diversion rib plate along the Y direction are equal and are both 3 mm; the sizes of the first diversion rib plate and the ninth diversion rib plate along the Y direction are equal and are both 1.9 mm; the distance between two adjacent shunting rib plates is 0.8 mm.
11. A semiconductor device comprising a power chip and the miniaturized heat dissipating device applied to the power chip of any one of claims 1 to 10, wherein the power chip is fixed on the upper surface of the fourth region (12) of the sealing layer (21) of the heat dissipating device M1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111495779.5A CN113903717B (en) | 2021-12-09 | 2021-12-09 | Miniaturized heat dissipation device applied to power chip and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111495779.5A CN113903717B (en) | 2021-12-09 | 2021-12-09 | Miniaturized heat dissipation device applied to power chip and semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113903717A true CN113903717A (en) | 2022-01-07 |
| CN113903717B CN113903717B (en) | 2022-05-06 |
Family
ID=79025457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111495779.5A Active CN113903717B (en) | 2021-12-09 | 2021-12-09 | Miniaturized heat dissipation device applied to power chip and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113903717B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1158549A (en) * | 1996-02-29 | 1997-09-03 | 中国科学院上海光学精密机械研究所 | Microchannel cooling heat sink |
| JP2004363417A (en) * | 2003-06-06 | 2004-12-24 | Fuji Electric Holdings Co Ltd | Liquid cooling type cooling body |
| TW200506309A (en) * | 2003-03-17 | 2005-02-16 | Cooligy Inc | Multi-level microchannel heat exchangers |
| FR2861894A1 (en) * | 2003-10-31 | 2005-05-06 | Valeo Equip Electr Moteur | DEVICE FOR COOLING A POWER ELECTRONIC |
| JP2005217211A (en) * | 2004-01-30 | 2005-08-11 | Tecnisco Ltd | Cooler for semiconductors and cooler stack for semiconductors |
| US20080279239A1 (en) * | 2003-12-16 | 2008-11-13 | Hirofumi Kan | Semiconductor Laser Device and Method of Manufacturing the Same |
| TW201716739A (en) * | 2015-11-06 | 2017-05-16 | Nat Chung-Shan Inst Of Science And Tech | Improved microchannel structure capable of improving the channel flow rate of the microchannel and reducing the substrate temperature |
| CN110957632A (en) * | 2019-12-11 | 2020-04-03 | 北京凯普林光电科技股份有限公司 | Micro-channel heat sink for improving semiconductor laser array spectrum half-width |
| CN113300209A (en) * | 2021-05-21 | 2021-08-24 | 中国科学院西安光学精密机械研究所 | Cooling heat sink and stacked array applied to high-power semiconductor light source chip |
-
2021
- 2021-12-09 CN CN202111495779.5A patent/CN113903717B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1158549A (en) * | 1996-02-29 | 1997-09-03 | 中国科学院上海光学精密机械研究所 | Microchannel cooling heat sink |
| TW200506309A (en) * | 2003-03-17 | 2005-02-16 | Cooligy Inc | Multi-level microchannel heat exchangers |
| JP2004363417A (en) * | 2003-06-06 | 2004-12-24 | Fuji Electric Holdings Co Ltd | Liquid cooling type cooling body |
| FR2861894A1 (en) * | 2003-10-31 | 2005-05-06 | Valeo Equip Electr Moteur | DEVICE FOR COOLING A POWER ELECTRONIC |
| US20080279239A1 (en) * | 2003-12-16 | 2008-11-13 | Hirofumi Kan | Semiconductor Laser Device and Method of Manufacturing the Same |
| JP2005217211A (en) * | 2004-01-30 | 2005-08-11 | Tecnisco Ltd | Cooler for semiconductors and cooler stack for semiconductors |
| TW201716739A (en) * | 2015-11-06 | 2017-05-16 | Nat Chung-Shan Inst Of Science And Tech | Improved microchannel structure capable of improving the channel flow rate of the microchannel and reducing the substrate temperature |
| CN110957632A (en) * | 2019-12-11 | 2020-04-03 | 北京凯普林光电科技股份有限公司 | Micro-channel heat sink for improving semiconductor laser array spectrum half-width |
| CN113300209A (en) * | 2021-05-21 | 2021-08-24 | 中国科学院西安光学精密机械研究所 | Cooling heat sink and stacked array applied to high-power semiconductor light source chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113903717B (en) | 2022-05-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111415915B (en) | Heat radiation structure of micro-channel radiator | |
| US20060090888A1 (en) | Heat-exchange type cooler | |
| CN212695141U (en) | Microchannel heat sink with tile-shaped fins | |
| CN111900143A (en) | Manifold type high depth-width ratio micro-channel heat exchanger | |
| CN204424406U (en) | A kind of cooled plate structure being applied to electric automobile | |
| CN113903717B (en) | Miniaturized heat dissipation device applied to power chip and semiconductor device | |
| CN212695143U (en) | Micro-channel heat sink with vein-shaped flow dividing structure | |
| CN212810289U (en) | Micro-channel heat sink with special rib structure | |
| CN214065815U (en) | Heap heat exchanger | |
| US20090178788A1 (en) | Semiconductor cooling structure | |
| CN111799238B (en) | Double-sided water-cooling IGBT radiator and radiating installation structure thereof | |
| CN215816024U (en) | Liquid cooling board and battery package | |
| CN217306599U (en) | Battery device and extrusion liquid cooling plate thereof | |
| CN214313327U (en) | Liquid cooling plate and battery thermal management system | |
| CN218101173U (en) | Multipurpose three-phase rectifier bridge product plastic package mould | |
| CN209914351U (en) | Water-cooling plate radiator of frequency converter | |
| CN219811553U (en) | Three-layer type stamping brazing water cooling plate | |
| CN109346444A (en) | A kind of micro- radiator of the trapezoidal ridge rib array of band | |
| CN212691143U (en) | Pipe fitting adapter, liquid cooling plate radiator and computing equipment | |
| CN216563103U (en) | Heat radiation assembly, radiator, semiconductor module and vehicle | |
| JPH0639502Y2 (en) | heatsink | |
| CN218769769U (en) | Liquid cooling plate, battery module and battery pack | |
| CN220359605U (en) | Radiating fin, thermosiphon radiator and multidimensional radiating device | |
| CN218069976U (en) | Water cooling plate of battery and battery | |
| CN217306490U (en) | Impact type water-cooling chip radiator of vortex micro-channel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |