CN110952135A

CN110952135A - Polycrystalline gallium nitride growth device

Info

Publication number: CN110952135A
Application number: CN201911268465.4A
Authority: CN
Inventors: 林岳明; 乔焜; 高明哲
Original assignee: Shanghai Xitang Semiconductor Technology Co ltd
Current assignee: Shanghai Xitang Semiconductor Technology Co ltd
Priority date: 2019-12-11
Filing date: 2019-12-11
Publication date: 2020-04-03
Anticipated expiration: 2039-12-11
Also published as: CN110952135B

Abstract

The application relates to a polycrystalline gallium nitride growth device. The polycrystalline gallium nitride growth device comprises a reaction vessel, wherein the reaction vessel is provided with a first chamber main body and a second chamber main body which are communicated with each other in the axial direction of the reaction vessel, the first chamber main body is connected with at least two gas inflow channels, and a cylinder body is arranged in the second chamber main body; the cylinder has openings corresponding to the at least two gas inflow passages, and the cylinder is provided with a plurality of parts with through holes at intervals in the axial direction. The polycrystalline gallium nitride growth device can effectively improve the yield of polycrystalline gallium nitride, and meanwhile, the size of the polycrystalline gallium nitride growth device cannot be increased.

Description

Polycrystalline gallium nitride growth device

Technical Field

The invention relates to the technical field of semiconductor materials, in particular to a polycrystalline gallium nitride growth device.

Background

The third generation semiconductor material is a wide bandgap semiconductor material represented by gallium nitride (GaN), silicon carbide (SiC), diamond and zinc oxide, the band gap energy of the third generation semiconductor material can reach 3.3-5.5 eV, and compared with the traditional first generation semiconductor materials of silicon (Si) and germanium (Ge), the second generation semiconductor materials of gallium arsenide (GaAs) and indium phosphide (InP) and the like, the third generation semiconductor material has unique performances of large forbidden bandwidth, high breakdown electric field, large thermal conductivity, high electron saturation drift velocity, small dielectric constant and the like, so that the third generation semiconductor material shows huge application potential in the aspects of photoelectron devices, power electronics, radio frequency microwave devices, lasers, detectors and the like, and is a hotspot of research in the semiconductor field of various countries in the world.

The growth method of gallium nitride single crystal includes Hydride Vapor Phase Epitaxy (HVPE), high pressure nitrogen solution, ammonothermal, Na flux method, but the single crystal growth technology is not mature at present and has not been widely used. Among the above methods, the ammonothermal method is easy to obtain large-size single crystals, and has the potential of producing gallium nitride single crystals in batch. The ammonothermal method for growing gallium nitride single crystal requires enough polycrystalline gallium nitride as raw material, but the current HVPE equipment is rarely used for growing polycrystalline gallium nitride, and the yield of the polycrystalline gallium nitride grown by the HVPE equipment is also low.

Disclosure of Invention

In view of the above, there is a need for an improved apparatus for growing polycrystalline gallium nitride, which addresses the problem of lower yield of polycrystalline gallium nitride grown by conventional HVPE equipment.

A polycrystalline gallium nitride growth device comprises a reaction vessel, wherein the reaction vessel is provided with a first chamber main body and a second chamber main body which are communicated with each other in the axial direction of the reaction vessel, the first chamber main body is connected with at least two gas inflow channels, and a cylinder body is arranged in the second chamber main body;

the cylinder body is provided with openings corresponding to the at least two gas inflow channels, and a plurality of parts with through holes are arranged on the cylinder body at intervals in the axial direction of the cylinder body.

According to the polycrystalline gallium nitride growth device, the first chamber main body for gas inlet and the second chamber main body for reaction are arranged in the reaction container, so that gas inlet and polycrystalline gallium nitride growth can be separated, polycrystalline gallium nitride can grow in a centralized manner, and the utilization rate of gas raw materials is improved; simultaneously, through setting up the barrel and setting up a plurality of parts of taking the through-hole at the barrel axial, existing growth area that is favorable to increasing polycrystalline gallium nitride improves polycrystalline gallium nitride's output, can avoid again the unable abundant problem of contact of gas in polycrystalline growth process to can not increase reaction vessel's radial dimension yet.

In one embodiment, the perforated member comprises a screen or perforated partition.

In one embodiment, a gallium boat is disposed in the first chamber body, and at least one of the gas inflow passages communicates with the gallium boat and extends through the gallium boat into the barrel.

In one embodiment, the at least two gas inflow channels are symmetrical about the axis of the cylinder.

In one embodiment, the wall of the cylinder body is provided with a plurality of exhaust holes.

In one embodiment, the interval between two adjacent exhaust holes is gradually reduced from the open end of the barrel to the bottom of the barrel.

In one embodiment, the apparatus further comprises a heating assembly disposed on an outer wall of the reaction vessel, the heating assembly configured to heat the first chamber body and the second chamber body, respectively.

In one embodiment, the heating assembly includes a first heating assembly and a second heating assembly capable of controlling temperatures independently of each other, the first heating assembly being disposed in correspondence with the first chamber body for heating the first chamber body, and the second heating assembly being disposed in correspondence with the second chamber body for heating the second chamber body.

In one embodiment, the apparatus further comprises a third heating assembly in contact with an outer wall of the barrel for heating the barrel to cause a temperature difference between the barrel and the second chamber body.

In one embodiment, a base is further arranged in the second chamber body and used for bearing the cylinder; the third heating assembly comprises a resistance wire, and the resistance wire is arranged on the surface of the base, which is in contact with the barrel body.

Drawings

Fig. 1 is a schematic structural diagram according to an embodiment of the present application.

Description of reference numerals:

100. the polycrystalline gallium nitride growth device comprises a polycrystalline gallium nitride growth device 101, a reaction container 102, a first chamber body 103, a second chamber body 104, a gas inflow channel 1041, an ammonia gas inflow channel 1042, a hydrogen chloride gas inflow channel 1043, an ammonia gas inflow channel 105, a cylinder 1051, an exhaust hole 106, a component with a through hole 1061, a through hole 107, a gallium boat 108, a heating assembly 1081, a first heating assembly 1082, a second heating assembly 109, a third heating assembly 110 and a base.

Detailed Description

To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. As used herein, the terms "vertical," "horizontal," "left," "right," "upper," "lower," "front," "rear," "circumferential," and the like are based on the orientation or positional relationship shown in the drawings for ease of description and simplicity of description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the present invention.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

When polycrystalline gallium nitride is prepared by using a conventional Hydride Vapor Phase Epitaxy (HVPE) apparatus, a plurality of trays may be arranged side by side so as to be simultaneously contacted with the reaction gas, thereby obtaining more polycrystalline gallium nitride. However, such a method is liable to cause a situation that the reaction gas does not completely cover the tray, and placing a plurality of trays side by side also causes an increase in the inner diameter of the reaction vessel, thereby increasing the space occupation volume of the HVPE apparatus, which is disadvantageous for transportation and installation of the HVPE apparatus.

The defects existing in the above solutions are the results obtained after the inventor has practiced and studied carefully, so the discovery process of the above problems and the solutions proposed by the following embodiments of the present application for the above problems should be the contribution of the inventor to the present application in the process of the present application.

Referring to fig. 1, embodiments of the present disclosure provide an apparatus 100 for growing polycrystalline gallium nitride, which can improve the yield of polycrystalline gallium nitride without increasing the occupied space of HVPE equipment.

The polycrystalline gallium nitride growth device 100 comprises a reaction vessel 101, wherein the reaction vessel 101 is provided with a first chamber main body 102 and a second chamber main body 103 which are communicated with each other in sequence in the axial direction of the reaction vessel 101, the first chamber main body 102 is connected with at least two gas inflow channels 104, a cylinder 105 is arranged in the second chamber main body 103, the cylinder 105 is provided with an opening 1052 which is correspondingly arranged with the at least two gas inflow channels 104, and gas flows through the first chamber main body 102 through the at least two gas inflow channels 104, then enters the cylinder 105 from the opening 1052 and is mixed in the cylinder 105.

Specifically, taking fig. 1 as an example, the first chamber body 102 and the second chamber body 103 may be both cylindrical and have open ends, the axes of the two chamber bodies are overlapped, and the open end of one chamber body extends into the other chamber body from the open end of the other chamber body, so as to realize the mixing reaction of the gases. Further, in this embodiment, the open end of the first chamber body 102 extends into the second chamber body 103, so that the gases can all enter the second chamber body 103 to mix and grow polycrystalline gallium nitride, and the gaseous raw materials can be fully utilized. In addition, the shape of the opening 1052 may be circular, square, diamond or other shapes, and of course, each gas inflow channel may be provided with one opening, as long as the gas in the gas inflow channel 104 can be delivered into the cylinder 105 through the opening 1052, and the shape and number of the openings 1052 are not limited in this application.

On the other hand, gallium chloride (including GaCl, GaCl) is required for producing polycrystalline gallium nitride₂、GaCl₃) Gas and ammonia (NH)₃) The mixing reaction, and thus the at least two gas inflow channels 104 include at least one gallium chloride gas inflow channel and at least one ammonia gas inflow channel. Of course, the liquid metal gallium may be disposed in one of the gas inflow channels, and the hydrogen chloride (HCl) gas is introduced to react with the liquid metal gallium (Ga) to generate the gallium chloride gas, and then the gallium chloride gas is conveyed to the second chamber main body 103 through the gas inflow channel, so as to facilitate the preparation and conveyance of the gallium chloride gas.

The cylinder 105 is provided with a plurality of members 106 having through holes 1061 in the axial direction thereof. In particular, the member 106 may be a screen or a perforated partition. Further, the edges of the screen or baffle are connected to the cylinder 105 and the plane of the screen or baffle is parallel to the plane of the opening 1052. Preferably, the member 106 is provided as a screen. The mixed gas reacts with the perforated member 106 and the barrel 105 to produce polycrystalline gallium nitride. Specifically, the gases are mixed at the side of the cylinder 105 near the first chamber body 102 after being output from the gas inflow channel 104, and the mixed gases pass through the through hole 1061 to reach each component 106 and the bottom of the cylinder 105, and react at a high temperature of about 1100 ℃ to generate polycrystalline gallium nitride. Further, a seed of polycrystalline gallium nitride may be placed on the bottom of the barrel 105 and member 106 to facilitate growth of the polycrystalline gallium nitride.

According to the polycrystalline gallium nitride growth device 100, the first chamber main body 102 for gas inlet and the second chamber main body 103 for reaction are arranged in the reaction vessel 105, so that gas inlet and polycrystalline gallium nitride growth can be separated, polycrystalline gallium nitride can grow in a centralized manner in the cylinder 105, and the utilization rate of gas raw materials is improved; meanwhile, the cylinder 105 is arranged, and the plurality of components 106 with the through holes 1061 are axially arranged on the cylinder, so that the growth area of the polycrystalline gallium nitride is increased, the yield of the polycrystalline gallium nitride is improved, gas can be fully contacted with the plurality of components 106 with the through holes, the radial size of the reaction container 101 cannot be increased, and the transportation and arrangement of the polycrystalline gallium nitride growth device 100 are facilitated.

In some embodiments, as shown in FIG. 1, a gallium boat 107 is disposed in the first chamber body 102, and at least one gas inflow channel communicates with the gallium boat 107 and extends through the gallium boat 107 into the barrel 105. As shown in fig. 1, the arrows indicate the flowing direction of the gas, the gallium boat 107 is horizontally fixed in the first chamber body 102, the hydrogen chloride gas inflow channel 1042 is communicated with the gallium boat 107 and extends into the second chamber body 103 through the gallium boat 107, so that the hydrogen chloride gas can react with the liquid metal gallium in the gallium boat 107 under the transportation of the carrier gas (usually nitrogen gas) to generate the gallium chloride gas, and the gallium chloride gas is continuously transported into the cylinder 105 through the hydrogen chloride gas inflow channel 1042 to be mixed with the ammonia gas. The preparation and the transportation of the gallium chloride gas are facilitated by introducing the gallium boat 107, the utilization efficiency of the gas raw materials is ensured, meanwhile, the introduction of impurities can be reduced, and the quality of polycrystalline gallium nitride is improved.

Further, the at least two gas inflow passages 104 are symmetrical with respect to the axis of the cylinder 105. As shown in fig. 1, the axis of the hydrogen chloride gas inflow passage 1042 coincides with the axis of the cylinder 105, and the two ammonia

gas inflow passages

1041 and 1043 are symmetrical with respect to the axis of the cylinder 105. By the above method, the component 106 can be uniformly contacted with the mixed gas, and the contact degree is basically the same, so that the quality of polycrystalline gallium nitride precipitated at each position of the component 106 is basically the same.

In some embodiments, as shown in fig. 1, the wall of the cylinder 105 is provided with a plurality of vents 1051, so that the gas can be rapidly discharged from the vents 1051 after the reaction. The exhaust holes 1051 are formed in the cylinder 105, so that gas after reaction can be exhausted in time, and the phenomenon that the gas after reaction is accumulated in the cylinder 105 to influence the growth efficiency of polycrystalline gallium nitride is avoided.

Further, the interval between the adjacent two vent holes 1051 is gradually decreased from the open end of the cylinder 105 to the bottom of the cylinder 105. That is, in the axial direction of the cylinder 105, the exhaust holes 1051 close to the opening end of the cylinder 105 are arranged sparsely, and the exhaust holes 1051 close to the bottom of the cylinder 105 are arranged densely, so that more mixed gas flows to the bottom of the cylinder 105, the flow stroke of the mixed gas is prolonged, the retention time of the mixed gas in the cylinder 105 is increased, the mixed gas is fully reacted in the cylinder 105, and the utilization efficiency of the gas is improved.

In some embodiments, as shown in fig. 1, the polycrystalline gallium nitride growth apparatus 100 further comprises a heating assembly 108 disposed on an outer wall of the reaction vessel 101, the heating assembly 108 being configured to heat the first chamber body 102 and the second chamber body 103, respectively. Specifically, the heating assembly 108 includes a first heating assembly 1081 and a second heating assembly 1082 capable of controlling temperature independently from each other, wherein the first heating assembly 1081 is disposed corresponding to the first chamber body 102 for heating the first chamber body 102, and the second heating assembly 1082 is disposed corresponding to the second chamber body 103 for heating the second chamber body 103.

In the preparation process of the polycrystalline gallium nitride, the control of the temperature and the mixing uniformity of the gas are equally important, and the mixed gas needs to reach a high temperature of 1100 ℃ during reaction, so that the first heating assembly 1081 is arranged in the embodiment, so that the liquid metal gallium in the first chamber main body 102 reacts with the hydrogen chloride gas to generate the gallium chloride gas; and the second heating element 1082 heats the second chamber body 103 to a temperature of about 1100 ℃ to promote the reaction of the gallium chloride gas and the ammonia gas to form gallium nitride crystals. By introducing the first heating assembly 1081 and the second heating assembly 1082 which can be independently controlled, the precise control of the reaction temperature is facilitated, and the growth quality of the polycrystalline gallium nitride is ensured.

Further, the polycrystalline gallium nitride growth apparatus 100 further comprises a third heating assembly 109, the third heating assembly 109 being in contact with the outer wall of the barrel 105 for heating the barrel 105 such that a temperature difference exists between the barrel 105 and the second chamber body 103. By arranging the third heating assembly 109 to heat the cylinder 105, the reaction temperature of the mixed gas in the cylinder 105 can be properly increased, so that the growth rate of the polycrystalline gallium nitride is increased.

Further, as shown in fig. 1, a base 110 is further disposed in the second chamber body 103 for carrying the cylinder 105; the third heating assembly 109 comprises a resistance wire disposed at the face of the base 110 that contacts the barrel 105. In other embodiments, the base 110 is further provided with a cooling tube, and the cooling tube is communicated with an external cooling liquid to adjust the temperature of the cylinder 105, so as to keep the temperature of the cylinder 105 constant, and provide an optimal ambient temperature for the generation of the polycrystalline gallium nitride. The temperature of the cylinder 105 can be regulated and controlled conveniently in the above way, so that the growth of polycrystalline gallium nitride is promoted.

It is understood that the first heating assembly 1081, the second heating assembly 1082, and the third heating assembly 109 can be at least one of a resistance wire, an electric heating tube, or a radio frequency heater.

In some embodiments, both the member 106 and the bottom of the barrel 105 are provided with seeds of polycrystalline gallium nitride (not shown), and the mixed gas is contacted with the seeds to grow the polycrystalline gallium nitride. By laying polycrystalline gallium nitride seed crystals on the part 106 and the bottom of the cylinder 105, the growth quality of the polycrystalline gallium nitride is improved.

In some embodiments, a recovery port (not shown) for recovery of gas after completion of the reaction is further provided in the second chamber body 103. Specifically, the recycling port can be used for recycling gas reaction products and unreacted resource gas, so that resource waste and air pollution are avoided.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims

1. A polycrystalline gallium nitride growth apparatus, comprising:

the reaction device comprises a reaction vessel, a first chamber body and a second chamber body, wherein the first chamber body and the second chamber body are arranged in the axial direction of the reaction vessel and are communicated with each other;

2. The polycrystalline gallium nitride growth apparatus of claim 1, wherein the perforated member comprises a screen or a perforated partition.

3. The polycrystalline gallium nitride growth apparatus of claim 1 or claim 2, wherein a gallium boat is disposed in the first chamber body, and at least one of the gas inflow passages communicates with the gallium boat and extends through the gallium boat into the barrel.

4. The polycrystalline gallium nitride growth apparatus of claim 1 or claim 2, wherein the at least two gas inflow channels are symmetrical about the axis of the barrel.

5. The polycrystalline gallium nitride growth apparatus of claim 1, wherein the barrel wall has a plurality of gas vents.

6. The polycrystalline gallium nitride growth device of claim 5, wherein the spacing between adjacent two of the vent holes gradually decreases from the open end of the barrel to the bottom of the barrel.

7. The polycrystalline gallium nitride growth apparatus of claim 1, further comprising a heating assembly disposed on an outer wall of the reaction vessel, the heating assembly configured to heat the first chamber body and the second chamber body, respectively.

8. The polycrystalline gallium nitride growth apparatus of claim 7,

the heating assembly comprises a first heating assembly and a second heating assembly, the first heating assembly and the first chamber body can independently control the temperature, the first heating assembly is arranged corresponding to the first chamber body and used for heating the first chamber body, and the second heating assembly is arranged corresponding to the second chamber body and used for heating the second chamber body.

9. The polycrystalline gallium nitride growth apparatus of claim 7 or claim 8, further comprising a third heating assembly in contact with the outer wall of the barrel for heating the barrel to cause a temperature differential between the barrel and the second chamber body.

10. The polycrystalline gallium nitride growth apparatus of claim 9,

the second chamber body is also provided with a base for bearing the cylinder;

the third heating assembly comprises a resistance wire, and the resistance wire is arranged on the surface of the base, which is in contact with the barrel body.