CN101519772B - Method and device for distributing inlet gases of reaction source of chemical vapor deposition material growing device - Google Patents
Method and device for distributing inlet gases of reaction source of chemical vapor deposition material growing device Download PDFInfo
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- CN101519772B CN101519772B CN200910030912.2A CN200910030912A CN101519772B CN 101519772 B CN101519772 B CN 101519772B CN 200910030912 A CN200910030912 A CN 200910030912A CN 101519772 B CN101519772 B CN 101519772B
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- reaction
- decomposition temperature
- gas
- reaction source
- source gas
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 73
- 239000000463 material Substances 0.000 title claims abstract description 28
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title abstract description 25
- 239000007789 gas Substances 0.000 title abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 41
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 23
- 239000010439 graphite Substances 0.000 claims abstract description 23
- 230000006698 induction Effects 0.000 claims abstract description 18
- 239000010453 quartz Substances 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 14
- 230000008569 process Effects 0.000 abstract description 13
- 239000000203 mixture Substances 0.000 description 9
- 230000032258 transport Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- 238000000407 epitaxy Methods 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 239000013067 intermediate product Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
The invention provides a method for distributing inlet gases of a reaction source of a CVD (chemical vapor deposition) material growing device, which comprises that: reaction air sources with big difference in decomposition temperatures separately enter a reaction cavity through respective transport channels, and a source gas with higher decomposition temperature is heated and predecomposed, and then is fully mixed with a gas of the reaction source with lower decomposition temperature for reaction at a proper temperature to epitaxially grow a thin film material. The gas of the reaction source with higher decomposition temperature is needed to be heated and predecomposed before being transported to the inlet end of the graphite reaction cavity, and the process is realized through arrangement of graphite tube induction elements on the periphery of a thin quartz tube for guiding the gas by a radio frequency heating method.
Description
Technical field
The present invention relates to prepare the reaction source air inlet apportioning method of CVD material growing device of thin-film material and the optimization design of device, mainly to enter separately reaction cavity through separately the passage that transports respectively by allowing decomposition temperature differ larger reaction source gas, and after the higher reaction source gas of decomposition temperature is heated predecomposition, allow again the lower source gas of itself and decomposition temperature fully mix and react, thereby complete the epitaxial process of thin-film material.
Background technology
The epitaxial growth method that is used for thin-film material comprises: chemical vapor deposition (CVD), electron cyclotron resonance plasma chemical vapor deposition (ECR-MPCVD), rheotaxial growth (LPE), vapor phase epitaxial growth (VPE), molecular beam epitaxial growth (MBE) etc.Wherein the CVD growing technology belongs to one of method the most commonly used, is characterized in that equipment cost is lower, production lot is large, uniformity of film is good, film composition easy to control and doping etc.
In carrying out the process of Material growth with CVD equipment, normally allow different reaction source gas first mix before entering reaction chamber, and then be introduced into together in reaction chamber, near substrate surface, the recombine of atom is decomposed, realized through chemical reaction to the reactant gas molecules of having mixed under growth temperature, thereby deposit goes out required thin-film material on substrate.If participate in the reaction source of reaction, different source decomposing gas temperature differ larger, the gas molecule of a certain source of the gas just can decompose at relatively low temperature, and the decomposition of the gas molecule of another source of the gas needs higher temperature, this species diversity will cause near the substrate surface of high temperature, the lower source gas of decomposition temperature fully decomposes, and the higher source gas of decomposition temperature also fails to decompose fully, can not fully react thereby cause between the gas molecule of differential responses sources.So not only can reduce speed of reaction, reduce the utilization ratio of source of the gas gas, and may affect the quality of epitaxial thin film material.Because the final degradation production of the reaction source gas that decomposition temperature is lower may generate some other materials with the intermediate product reaction of the higher reaction source gas of decomposition temperature and be deposited on substrate, the final degradation production of the reaction source gas that perhaps decomposition temperature is lower be in superfluous state and not complete reaction namely be deposited on substrate, these all will seriously reduce the quality of the thin-film material of extension.
Summary of the invention
The objective of the invention is to propose a kind of reaction source air inlet apportioning method for the CVD material growing device and the optimization design of device, mainly to enter separately reaction cavity through separately the passage that transports respectively by allowing decomposition temperature differ larger reaction source gas, and after the higher source gas of decomposition temperature is heated predecomposition, allow again the lower source gas of its predecomposition product and decomposition temperature mix at the gas mixed flow region, complete chemical reaction to carry out the epitaxy of thin-film material at reaction zone.
Technical scheme of the present invention is: the reaction source air inlet apportioning method of CVD material growing device is to allow decomposition temperature differ larger reactant gas source enter individually reaction cavity through separately the passage that transports, and the higher source gas of decomposition temperature is heated react with the epitaxy thin-film material at suitable temperature after allowing the lower reaction source gas of itself and decomposition temperature fully mix after predecomposition again.For the higher reaction source gas of decomposition temperature, need before being transported to graphite reaction chamber inlet end it is heated that to make its predecomposition, this process be by configuring the carbon tube induction pieces around the fine quartz pipe of pilot gas, realizing through the method for radio frequency heating.Thin guiding silica tube is transported to the higher reaction source gas of the decomposition temperature of the lower reaction source gas of decomposition temperature and predecomposition and intermediate product thereof near the inlet end of graphite reaction chamber respectively, and then after allowing both fully mix, the heated substrate surface in the graphite reaction chamber reacts and deposit.
The CVD material growing device: the reaction chamber heating unit adopts radio-frequency induction heater, and the induction pieces of radio-frequency induction heater is the graphite chamber, put graphite base in wherein placing substrate, the graphite chamber is positioned at silica tube with formation silica tube reaction chamber.The reaction source gas that the reaction source gas that decomposition temperature is lower and decomposition temperature are higher imports near the inlet end of reaction chamber respectively by the fine quartz pipe by the silica tube blind flange; Source of the gas gas is in the transport process of fine quartz pipe, configure carbon tube around the fine quartz pipe of the higher source gas of guiding decomposition temperature consisting of induction pieces, with the mode of radio-frequency induction heating, the higher source gas of decomposition temperature that is passed through in pipe is heated and make its predecomposition.
The present invention program's advantage is:
1, the growth velocity in raising thin-film material epitaxial process.
2, improve the utilization ratio of reaction source gas to save the material preparation cost.
3, the impurity deposit in the reduction reaction process is to improve the quality of epitaxial film.
Description of drawings
Figure below is structural representation of the present invention,
Embodiment
As shown in the figure, the implementation process of this design is mainly as described below:
The reaction source air inlet assigned unit of CVD material growing device: heating unit adopts radio-frequency induction heater, and the induction pieces of radio-frequency induction heater is the graphite chamber; Be equipped with graphite base in the graphite chamber placing substrate, the graphite chamber is positioned at silica tube; The reaction source gas that the reaction source gas that decomposition temperature is lower and decomposition temperature are higher is passed through respectively near the inlet end of silica tube blind flange by thin guiding silica tube importing reaction chamber; Configure carbon tube around the fine quartz pipe of the source gas that the guiding decomposition temperature is higher to consist of induction pieces.
Different gas circuits imports the silica tube cavity to required reaction source gas by flange 1 respectively, and the reaction source gas that the thinner silica tube 2 of use is guided respectively the different decomposition temperature in cavity immediately is transported near graphite reaction chamber inlet end in silica tube.For the lower reaction source gas of decomposition temperature, at high temperature decompose than being easier to, so it directly is transported near graphite reaction chamber inlet end by the fine quartz pipe, it is not carried out heat pre-treatment in its transport process; And for the higher reaction source gas of decomposition temperature, needed it is heated and makes its predecomposition before being transported to graphite reaction chamber inlet end, this process is by configuring carbon tube induction pieces 3, realizing through radio frequency heating around the fine quartz pipe.Like this, near in the arrival silica tube graphite reaction chamber inlet end gas has the lower source gas of decomposition temperature, and be heated predecomposition the higher source gas of decomposition temperature and the mixture of partial intermediate, they enter cavity and transport mixing, at high temperature chemical reaction occur and realize the deposit of thin-film material at substrate surface by short range.
Specific embodiment as in the CVD epitaxial process of semiconductor film material silicon carbide (SiC), adopts silane (SiH
4) and ethene (C
2H
4) as reaction source gas; SiH
4Can effectively decompose more than 450 ℃, and C
2H
4Effective decomposition temperature more than 950 ℃.React if enter after allowing both directly mix in the graphite reaction chamber of silica tube, just be pulled out reaction zone because the greatest differences of decomposition temperature will cause both fully not react, thereby cause the waste of reaction source gas and affect the epitaxy of SiC film.If but after the optimization design by reaction source air inlet apportioning method and device, allow SiH
4Directly be transported near graphite reaction chamber inlet end by thin guiding silica tube, and C
2H
4In the transport process of thin guiding silica tube, configure carbon tube to consist of induction pieces 3, with the C of mode to passing through in pipe of radio-frequency induction heating around the fine quartz pipe
2H
4Heat and be transported to again near graphite reaction chamber inlet end after making its predecomposition, then allowing SiH
4And C
2H
4And the intermediate product that decomposes enters high temperature reaction zone 5 reactions after fully mix mixing zone 4, and 6 are the reaction well heater, and 7 is the joint of inlet pipe and fine quartz pipe, and in figure, arrow is air flow line, thereby completes deposit and the growth of SiC thin-film material.
For another example in the epitaxial process of gan (GaN) thin-film material, due to the decomposition temperature lower (300～400 ℃) in organic Ga source, and ammonia (NH
3) effective decomposition temperature more than 800 ℃, can adopt equally the optimization design of reaction source air inlet apportioning method and device to improve the epitaxy of GaN thin-film material.
Claims (1)
1. the reaction source air inlet assigned unit of chemical vapor deposition material growing equipment, is characterized in that the heating unit of chemical vapor deposition material growing equipment adopts radio-frequency induction heater, and the first induction pieces of radio-frequency induction heater is the graphite chamber; Place substrate on pedestal in the graphite chamber, the graphite chamber is positioned at silica tube; The reaction source gas that the reaction source gas that decomposition temperature is lower and decomposition temperature are higher is passed through respectively near the inlet end of silica tube blind flange by guiding fine quartz pipe importing graphite chamber; Configure carbon tube to consist of the second induction pieces around the guiding fine quartz pipe of the reaction source gas that decomposition temperature is higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910030912.2A CN101519772B (en) | 2009-04-20 | 2009-04-20 | Method and device for distributing inlet gases of reaction source of chemical vapor deposition material growing device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910030912.2A CN101519772B (en) | 2009-04-20 | 2009-04-20 | Method and device for distributing inlet gases of reaction source of chemical vapor deposition material growing device |
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| Publication Number | Publication Date |
|---|---|
| CN101519772A CN101519772A (en) | 2009-09-02 |
| CN101519772B true CN101519772B (en) | 2013-06-05 |
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|---|---|---|---|
| CN200910030912.2A Expired - Fee Related CN101519772B (en) | 2009-04-20 | 2009-04-20 | Method and device for distributing inlet gases of reaction source of chemical vapor deposition material growing device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112197728A (en) * | 2020-09-16 | 2021-01-08 | 北京清碳科技有限公司 | Monitoring device in growth process of single crystal diamond |
| CN114318526A (en) * | 2021-09-18 | 2022-04-12 | 东莞市中镓半导体科技有限公司 | High-resistance silicon carbide film substrate on gallium nitride single crystal and manufacturing method thereof |
| CN113699509B (en) * | 2021-10-27 | 2022-02-01 | 苏州长光华芯光电技术股份有限公司 | Semiconductor growth equipment and working method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101191202A (en) * | 2006-12-01 | 2008-06-04 | 甘志银 | Heating system for metal organic substance chemical gaseous phase deposition device reaction cavity |
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2009
- 2009-04-20 CN CN200910030912.2A patent/CN101519772B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101191202A (en) * | 2006-12-01 | 2008-06-04 | 甘志银 | Heating system for metal organic substance chemical gaseous phase deposition device reaction cavity |
Non-Patent Citations (3)
| Title |
|---|
| JP昭58-140391A 1983.08.20 |
| JP特开平5-47672A 1993.02.26 |
| JP特开平6-45264A 1994.02.18 |
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| CN101519772A (en) | 2009-09-02 |
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