CN110928135B - Photomask for preventing electrostatic damage and method for preventing electrostatic damage of photomask - Google Patents
Photomask for preventing electrostatic damage and method for preventing electrostatic damage of photomask Download PDFInfo
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- CN110928135B CN110928135B CN201911329388.9A CN201911329388A CN110928135B CN 110928135 B CN110928135 B CN 110928135B CN 201911329388 A CN201911329388 A CN 201911329388A CN 110928135 B CN110928135 B CN 110928135B
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- 238000000034 method Methods 0.000 title claims description 40
- 238000005421 electrostatic potential Methods 0.000 claims abstract description 12
- 238000000206 photolithography Methods 0.000 claims description 19
- 238000013461 design Methods 0.000 claims description 7
- 238000001459 lithography Methods 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 238000004364 calculation method Methods 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims 1
- 238000012546 transfer Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000001259 photo etching Methods 0.000 abstract description 3
- 230000003068 static effect Effects 0.000 description 10
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 8
- 230000005611 electricity Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000005686 electrostatic field Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000011295 pitch Substances 0.000 description 3
- 244000089409 Erythrina poeppigiana Species 0.000 description 2
- 235000009776 Rathbunia alamosensis Nutrition 0.000 description 2
- 239000002216 antistatic agent Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The invention relates to the technical field of photoetching technology of semiconductors, in particular to a photomask for preventing electrostatic damage, which comprises a plurality of pattern modules and a photomask, wherein the pattern modules are used for executing a photoetching technology on a wafer, and the photomask further comprises: at least one conducting wire is used for connecting two pattern modules with different electrostatic potentials so as to form equipotential between the two pattern modules. The technical scheme of the invention has the beneficial effects that: the invention provides a photomask for preventing electrostatic damage, which is characterized in that a lead is arranged among a plurality of pattern modules of the photomask, so that equipotential is formed among the plurality of pattern modules, electrostatic charge transfer is avoided, electrostatic generation can be prevented from the source, production cost can be saved, and electrostatic damage can be effectively prevented.
Description
Technical Field
The invention relates to the technical field of photoetching technology of semiconductors, in particular to a photomask for preventing electrostatic damage and a method for preventing electrostatic damage of the photomask.
Background
In the semiconductor production process, the photomask is an important component in the whole process flow, has the characteristics of high price, uniqueness, high environmental sensitivity and the like, and is particularly sensitive to static electricity. Objects with different electrostatic potentials can cause electrostatic charge transfer between the objects due to electrostatic induction, and when the energy of an electrostatic field reaches a certain level, a medium between the objects can be broken down to discharge, so that electrostatic damage (Electro-Static discharge defect) is caused. Typically, the accumulated charge will discharge to a nearby low potential to release energy, with the closer the distance being easier to release. Assuming that E is the electric field strength, U is the voltage, d is the spacing between two pattern modules on the mask, e=u/d, as shown in fig. 1, as the design of the critical dimension becomes smaller, the d spacing also decreases, and even in the environment where the E field strength is unchanged, the breakdown voltage U becomes larger, which results in the mask suffering from electrostatic damage defect, which is the result of the interaction between the mask and the electric field.
In the prior art, in order to avoid the photomask from being scrapped due to irreversible electrostatic damage caused by the influence of static electricity, the current measures for reducing the static electricity in the semiconductor industry are widely adopted, and the specific measures are as follows: (1) grounding the machine and the operating tool of the photomask; (2) The humidity is increased, and the relative humidity in the workshop is kept to be more than 45 percent, because the electrostatic charge is inversely related to the humidity in the air, and the high-humidity environment can effectively prevent the generation of static electricity; (3) the photomask and related devices all use antistatic materials; (4) An operator wears an electrostatic bracelet, a graphite line dust-free suit and the like; (5) And the static eliminator generates positive and negative ions to neutralize charged ions so as to eliminate static. However, the above measures can greatly increase the production cost, and all the measures belong to passive defensive measures, and cannot completely eliminate static electricity.
Disclosure of Invention
In view of the above problems in the prior art, a photomask for preventing electrostatic damage and a method for preventing electrostatic damage of a photomask are provided.
The specific technical scheme is as follows:
the invention includes a photomask for preventing electrostatic damage, the photomask including a plurality of pattern modules for performing a lithography process on the wafer, the photomask further comprising:
and connecting the two pattern modules with different electrostatic potentials by using at least one wire so as to form equipotential between the two pattern modules.
Preferably, the photomask is disposed in a machine, and the maximum line width of each wire is smaller than the minimum line width that can be resolved by the machine.
Preferably, the maximum line width of each wire is:
CD max ≤3/4R
wherein,,
CD max representing a maximum line width of the wire;
r represents the minimum linewidth which can be resolved by the machine.
Preferably, the minimum line width R that can be resolved by the machine is obtained by the following calculation formula:
wherein,,
k1 represents the comprehensive coefficient of the lithography process;
λ represents a wavelength of a light source in the lithography process;
NA is the numerical aperture.
Preferably, the minimum line width of each wire is:
CD min ≥1/2R
wherein,,
CD min representing a minimum line width of the wire;
r represents the minimum linewidth which can be resolved by the machine.
Preferably, the design line width of the wire ranges from 60 nm to 300nm.
Preferably, the design line width of the wire ranges from 104 nm to 156nm.
Preferably, the design line width of the wire ranges from 144 nm to 216nm.
Preferably, the mask is made of chromium.
Preferably, all the graphic modules are equipotential by connection of wires.
Preferably, the graphic modules are connected by wires to form a polygonal or linear or star arrangement.
The invention also includes a method for preventing electrostatic damage of a photomask, applied to a photomask having a plurality of graphic modules, comprising:
at least two different electrostatic potential pattern modules are connected by a wire so that an equipotential is formed between a plurality of pattern modules.
Preferably, the photomask is disposed in a machine, and the maximum line width of the wire is calculated according to the following formula:
CD max ≤3/4R
wherein,,
CD max representing a maximum line width of the wire;
r represents the minimum linewidth which can be resolved by the machine.
Preferably, the minimum line width of the wire is calculated by the following formula:
CD min ≥1/2R
wherein,,
CD min representing a minimum line width of the wire;
r represents the minimum linewidth which can be resolved by the machine.
The technical scheme of the invention has the beneficial effects that: the invention provides a method for preventing electrostatic damage of a photomask, which is characterized in that a wire is arranged among a plurality of pattern modules of the photomask, so that equipotential is formed among the plurality of pattern modules, electrostatic charge transfer is avoided, static electricity can be prevented from being generated from the source, production cost can be saved, and electrostatic damage can be effectively prevented.
Drawings
Embodiments of the present invention will now be described more fully with reference to the accompanying drawings. The drawings, however, are for illustration and description only and are not intended as a definition of the limits of the invention.
FIG. 1 is a schematic diagram of a prior art mask;
FIG. 2 is a schematic diagram of a mask according to a first embodiment of the present invention;
FIG. 3 is a schematic diagram of a mask according to a second embodiment of the present invention;
FIG. 4 is a schematic diagram of a mask according to a third embodiment of the present invention;
FIG. 5 is a schematic diagram of a photomask according to a fourth embodiment of the present invention;
fig. 6 is a schematic diagram of a projection system according to an embodiment of the invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, without conflict, the embodiments of the present invention and features of the embodiments may be combined with each other.
The invention is further described below with reference to the drawings and specific examples, which are not intended to be limiting.
The present invention includes a photomask for preventing electrostatic damage, which is disposed in a machine, as shown in fig. 2, the photomask 1 includes a plurality of pattern modules 101, and the photomask is disposed above a wafer for performing a photolithography process on the wafer, and further includes:
the pattern modules with different electrostatic potentials are connected through a wire 102, so that an equipotential is formed between the two pattern modules 101.
Specifically, in this embodiment, the photomask includes two pattern modules 101, and the electrostatic potential between the plurality of pattern modules 101 is generally different, and electrostatic induction causes electrostatic charge transfer between the two pattern modules 101, so that when the energy of the electrostatic field reaches a certain level, the electrostatic field breaks down the medium therebetween to perform discharge, thereby causing electrostatic damage to the photomask. It should be noted that, in this embodiment, all the pattern modules 101 with different electric potentials are preferably connected, so that an equipotential is formed between all the pattern modules 101. In addition, it is also possible to choose to connect only a few pattern modules 101 with smaller pitches, since electrostatic breakdown is not likely to occur between pattern modules 101 with larger pitches, and for reasons of cost, connection between pattern modules with larger pitches may be omitted by using the wires 102.
Further, the graphic module 101 is made of chromium, as shown in fig. 2, a conductive wire 102 for connecting two graphic modules 101 with different electrostatic potentials is added, so that the two graphic modules 101 are changed from different electrostatic potentials to equipotential, and the possibility of electrostatic transfer is eliminated. Compared with the prior art, the mode of adopting the lead 102 to connect has lower cost and better antistatic effect by adopting antistatic materials, increasing humidity and other measures. Similarly, as shown in fig. 3, the photomask includes four pattern modules 101, and wires 102 are disposed between the four pattern modules, so that the four pattern modules are connected to form an equipotential, thereby preventing the transfer of electrostatic charges and suppressing the formation of static electricity from the source.
As a preferred embodiment, the maximum line width of each wire 102 is:
CD max ≤3/4R
wherein,,
CD max representing the maximum line width of the wire 102;
r represents the minimum line width that the machine can analyze.
Specifically, the mask 1 is disposed in a machine for performing a photolithography process, which is to image a pattern on the mask onto a wafer surface using ultraviolet rays, so as to transfer the pattern on the mask onto a photoresist on the wafer surface. Since the wires 102 are disposed between the plurality of graphic modules 101 of the mask, in order to avoid the influence of the existence of the wires 102 on the photolithography process, the maximum line width of each wire 102 on the mask 1 is smaller than the minimum line width that can be resolved by the machine, and in short, the maximum line width of the wires 102 is preferably 3/4R, and the maximum line width of the wires 102 is smaller than the minimum line width that can be resolved by the machine, so as to avoid the wires 102 from being resolved by the machine and affecting the photolithography process.
As a preferred embodiment, the minimum line width R that can be resolved by the machine is obtained by the following calculation formula:
wherein,,
k1 represents the comprehensive coefficient of the lithography process;
λ represents a wavelength of a light source in a photolithography process;
NA is the numerical aperture.
Specifically, k1 represents an integrated coefficient in the photolithography process, the value of k1 is related to each process step in the photolithography process, including but not limited to one or more of exposure mode, mask type, OPC (Optical Proximity Correction ) mode, photoresist improvement and exposure machine reconstruction, the smaller k1 represents the more advanced the photolithography process, but the more complex the technology difficulty is, the higher the corresponding process cost is, the larger k1 represents the simpler the photolithography process, but the corresponding resolution of the machine is lower, the theoretical limit value of k1 is 0.25, that is, the resolution of the machine reaches the limit when the value of k1 is 0.25, and the range of k1 is 0.25-0.5. From the above formula, it can be known that R is smaller as k1 is smaller, where R represents the minimum line width that the machine can resolve, i.e. the resolution of the machine, and smaller R indicates that the resolution of the machine is higher, but as k1 is reduced, the complexity of the photolithography process is also correspondingly increased. λ represents the wavelength of the light source in the photolithography process, i.e. the wavelength of ultraviolet light, NA is a numerical aperture, and the performance of a projection system used in the photolithography process is generally described by using the numerical aperture NA, as shown in fig. 6, the projection system mainly includes a mask 1 and a lens 2, the lens 2 is disposed between the mask 1 and a wafer 3, and the numerical aperture can be calculated by the following formula:
NA＝n*sina＝D/2f
where n is the refractive index of the medium between the lens and the wafer, D is the diameter of the lens, and f is the focal length of the lens. NA can be defined as the product of refractive index and sine of object (or image) to half-aperture angle of lens aperture, or the ratio of the diameter D of the lens to the focal length f of the 2-times lens, as can be seen from the above formula, the larger the diameter D of the lens, the more high frequency light can be received by the wafer and the higher the quality of the image.
As a preferred embodiment, the minimum line width of each wire 102 is:
CD min ≥1/2R
wherein,,
CD min representing the minimum line width of the wire 102;
r represents the minimum line width that the machine can analyze.
Specifically, considering the production cost of the photomask, the minimum line width of the wire 102 is designed to be greater than 1/2R, meanwhile, since the line width ratio between the photomask and the wafer is 1:4, the image projected onto the surface of the wafer by the photomask is reduced by 4 times compared with the actual line width of the photomask, the line width of the wire analyzed by the machine is actually 4 times of the line width after scaling, therefore, the actual line width of the wire on the photomask can be 4 times of the analyzed line width, and the design line width of the wire 102 is obtained to be 4CD min ～4CD max Between them.
Specifically, the line width of the conductive line 102 is also different for different types of machines. For example, using an ArF machine, lightThe source wavelength is 193nm, k1 has a value of 0.25, and the maximum numerical aperture NA max 0.93, thenTo sum up, the maximum line width CD of the conductive line 102 is deduced Max Less than 39nm, minimum line width CD min The designed linewidth interval of the conductive line 102 is 4×26 to 4×39nm, i.e. 104 to 156nm, for 26 nm.
Specifically, for the KrF machine, the wavelength λ=248 nm of the light source, the k1 value is 0.25, and the maximum numerical aperture NA Max =0.85, thenCalculating the maximum line width CD of the wire 102 Max Less than 54nm, minimum line width CD min The design linewidth of the lead 102 is calculated to be 4 x 36-4 x 54nm, i.e., 144-216 nm, for 36 nm.
The invention also includes a method for preventing electrostatic damage of a photomask, which is applied to a photomask with a plurality of pattern modules 101, and comprises the step of connecting the pattern modules 101 with different electrostatic potentials by using wires so as to form equipotential between the pattern modules 101.
In particular, fig. 2 to 5 show embodiments, and in particular, as shown in fig. 2, the mask 1 includes two graphic modules 101, and the two graphic modules 101 are connected to each other by a wire 102. As shown in fig. 3, the mask 1 includes four pattern modules 101, the four pattern modules 101 are connected to each other by four wires 102, and the four wires 102 are arranged in a rectangular shape. As shown in fig. 4, the mask 1 includes five pattern blocks 101, the five pattern blocks 101 are connected to each other by five wires 102, and the five wires 102 are arranged in a pentagon shape with a wider upper part and a narrower lower part. As shown in fig. 5, the mask 1 includes six pattern modules 101, the six pattern modules 101 are connected to each other by five wires 102, and the five wires 102 are arranged in a line.
It should be noted that, the number of the wires 102 is related to the number and layout of the graphic modules 101, and all the graphic modules 101 with different electrostatic potentials are connected by the wires 102, so that an equipotential is formed between the graphic modules 101, thereby avoiding the transfer of electrostatic charges, and fundamentally preventing the generation of static electricity.
As a preferred embodiment, the maximum line width of the wire 102 is calculated by the following formula:
CD max ≤3/4R
wherein,,
CD max representing the maximum line width of the wire 102;
r represents the minimum line width that the machine can analyze.
Specifically, the minimum line width R is calculated by the following formula:
wherein,,
k1 represents the comprehensive coefficient of the lithography process;
λ represents a wavelength of a light source in a photolithography process;
NA is the numerical aperture.
Specifically, k1 represents an integrated coefficient in the photolithography process, k1 ranges from 0.25 to 0.5, λ represents a wavelength of a light source in the photolithography process, that is, a wavelength of ultraviolet light, and NA is a digital aperture, and as can be known from the above formula, by decreasing k1 and increasing NA, R is a minimum line width that can be resolved by the machine, and a smaller R indicates a higher resolution of the machine. However, it should be noted that the value of k1 is related to each process step in the photolithography process, including exposure mode, mask type, OPC (Optical Proximity Correction ) mode, photoresist improvement and modification of the exposure machine, where a smaller k1 indicates a more complex photolithography process and a correspondingly higher cost, and a larger k1 indicates a simpler photolithography process and a correspondingly lower resolution of the machine, where the theoretical limit value of k1 is 0.25, that is, when the value of k1 is 0.25, the resolution of the machine reaches the limit.
Projection systems for lithographic processes typically incorporate a numerical aperture NA to describe the performance of the projection system, in particular by calculating the numerical aperture by the following formula:
NA＝n*sina＝D/2f
wherein,,
d is the diameter of the lens;
f is the focal length of the lens;
as a preferred embodiment, the minimum line width of the wire 102 is calculated by the following formula:
CD min ≥1/2R
wherein,,
CD min representing the minimum line width of the wire 102;
r represents the minimum line width that the machine can analyze.
The technical scheme of the invention has the beneficial effects that: the invention provides a photomask for preventing electrostatic damage, which is characterized in that a lead is arranged among a plurality of pattern modules of the photomask, so that equipotential is formed among the plurality of pattern modules, electrostatic charge transfer is avoided, electrostatic generation can be prevented from the source, production cost can be saved, and electrostatic damage can be effectively prevented.
The foregoing description is only illustrative of the preferred embodiments of the present invention and is not to be construed as limiting the scope of the invention, and it will be appreciated by those skilled in the art that equivalent substitutions and obvious variations may be made using the description and illustrations of the present invention, and are intended to be included within the scope of the present invention.
Claims (10)
1. A photomask for preventing electrostatic damage, the photomask comprising a plurality of pattern modules for performing a photolithography process on a wafer, the photomask being disposed in a machine, the photomask further comprising:
the pattern modules with at least two different electrostatic potentials are connected through a wire so as to form equipotential between the two pattern modules;
the minimum line width of each wire is as follows:
CD min ≥1/2R
wherein,,
CD min representing a minimum line width of the wire;
r represents the minimum linewidth which can be resolved by the machine.
2. The mask of claim 1, wherein a maximum line width of each of the wires is less than a minimum line width that the tool can parse.
3. The mask of claim 2 wherein each of said wires has a maximum linewidth of:
CD max ≤3/4R
wherein,,
CD max representing a maximum line width of the wire;
r represents the minimum linewidth which can be resolved by the machine.
4. The photomask of claim 3, wherein the minimum line width R that the tool can resolve is obtained by the following calculation formula:
wherein,,
k1 represents the comprehensive coefficient of the lithography process;
λ represents a wavelength of a light source in the lithography process;
NA is the numerical aperture.
5. The mask of claim 1 wherein the design linewidth of the conductive lines is in the range of 60-300 nm.
6. The mask of claim 1, wherein the mask is made of chromium.
7. The mask of claim 1 wherein all of said patterning modules are equipotential by wire bonding.
8. The mask of claim 7 wherein the pattern modules are wired to form a polygonal or linear or star arrangement.
9. A method for preventing electrostatic damage to a photomask, applied to a photomask having a plurality of pattern modules, comprising:
connecting at least two pattern modules with different electrostatic potentials by using wires so as to form equipotential among a plurality of pattern modules;
the minimum line width of the wire is calculated by the following formula:
CD min ≥1/2R
wherein,,
CD min representing a minimum line width of the wire;
r represents the minimum linewidth which can be resolved by the machine.
10. The method of claim 9, wherein the maximum line width of the wire is calculated by the formula:
CD max ≤3/4R
wherein,,
CD max representing a maximum line width of the wire;
r represents the minimum linewidth which can be resolved by the machine.
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| CN201911329388.9A CN110928135B (en) | 2019-12-20 | 2019-12-20 | Photomask for preventing electrostatic damage and method for preventing electrostatic damage of photomask |
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| CN201911329388.9A CN110928135B (en) | 2019-12-20 | 2019-12-20 | Photomask for preventing electrostatic damage and method for preventing electrostatic damage of photomask |
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| CN1459667A (en) * | 2002-05-15 | 2003-12-03 | 台湾积体电路制造股份有限公司 | Light cage for preventing electrostatic break down |
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