CN114167681A - Defect detection method, mask manufacturing method and semiconductor structure forming method - Google Patents

Defect detection method, mask manufacturing method and semiconductor structure forming method Download PDF

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Publication number
CN114167681A
CN114167681A CN202010949720.8A CN202010949720A CN114167681A CN 114167681 A CN114167681 A CN 114167681A CN 202010949720 A CN202010949720 A CN 202010949720A CN 114167681 A CN114167681 A CN 114167681A
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China
Prior art keywords
corrected
target
layout
adjacent
defect
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Chinese (zh)
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高亚新
沈泫
李忠生
游亚平
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Beijing Corp
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Beijing Corp
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Priority to CN202010949720.8A priority Critical patent/CN114167681A/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Abstract

A defect detection method, a mask manufacturing method and a semiconductor structure forming method are provided, wherein the defect detection method comprises the following steps: providing a target layout, wherein the target layout comprises a plurality of target graphs, and the plurality of target graphs extend along a second direction; acquiring an image to be corrected according to the target layout, wherein the image to be corrected comprises a plurality of graphs to be corrected, and the graphs to be corrected correspond to the target graphs; detecting the image to be corrected according to the target layout to obtain an adjacent defect graph in the image to be corrected; and acquiring the area to be corrected in the adjacent defect graph. And providing a correction basis for the subsequent formation of a correction mask and a semiconductor structure through the acquired region to be corrected.

Description

Defect detection method, mask manufacturing method and semiconductor structure forming method
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a defect detection method, a mask manufacturing method and a semiconductor structure forming method.
Background
The photoetching technology is a vital technology in the semiconductor manufacturing technology, and can realize the transfer of a pattern from a mask to the surface of a silicon wafer to form a semiconductor product meeting the design requirement. However, optical proximity effect is often accompanied in the existing lithography technology.
In order to correct for Optical Proximity effects, an Optical Proximity Correction (OPC) is generated. The core idea of optical proximity correction is to establish an optical proximity correction model based on consideration of counteracting optical proximity effect, and design a photomask pattern according to the optical proximity correction model, so that although the optical proximity effect occurs to the photomask pattern corresponding to the photoetched photoetching pattern, the counteraction of the phenomenon is considered when the photomask pattern is designed according to the optical proximity correction model, and therefore, the photoetched photoetching pattern is close to a target pattern actually expected by a user.
However, the yield of the semiconductor structure formed by the mask after the optical proximity correction in the prior art still needs to be improved.
Disclosure of Invention
The invention aims to provide a defect detection method, a mask manufacturing method and a semiconductor structure forming method, which can effectively improve the yield of the finally formed semiconductor structure.
In order to solve the above problems, the present invention provides a defect detection method, including: providing a target layout, wherein the target layout comprises a plurality of target graphs, and the plurality of target graphs extend along a second direction; acquiring an image to be corrected according to the target layout, wherein the image to be corrected comprises a plurality of graphs to be corrected, and the graphs to be corrected correspond to the target graphs; detecting the image to be corrected according to the target layout to obtain an adjacent defect graph in the image to be corrected; and acquiring the area to be corrected in the adjacent defect graph.
Optionally, the method for obtaining the image to be corrected includes: and carrying out optical proximity correction processing on the target layout for a plurality of times to obtain a first optical proximity correction layout, and carrying out simulated exposure processing on the first optical proximity correction layout to obtain the image to be corrected.
Optionally, the method for obtaining the image to be corrected includes: providing a semiconductor structure; and carrying out exposure processing on the semiconductor structure to obtain the image to be corrected.
Optionally, the adjacent defect patterns include: and the defect patterns are adjacent in a first direction, and the first direction is perpendicular to the second direction.
Optionally, the adjacent defect patterns include: the defect patterns adjacent to each other in the second direction.
Optionally, the method for obtaining the defect pattern in the image to be corrected includes: acquiring a plurality of first target intervals between the target patterns adjacent to each other along the first direction in the target layout; acquiring a plurality of first measurement intervals between the to-be-corrected patterns adjacent to each other along the first direction in the to-be-corrected image; and comparing the first target interval with the first measurement interval, wherein if the first measurement interval is smaller than the corresponding first target interval, the corresponding pattern to be corrected is the defect pattern.
Optionally, the method for obtaining a plurality of first target distances between the target patterns adjacent to each other in the target layout along the first direction includes: dividing the target graph adjacent to the first direction into a plurality of first divided sections along the second direction; and acquiring the distance between the corresponding first segmentation sections in the adjacent target graphs, and taking the distance as the first target distance.
Optionally, the method for obtaining a plurality of first measurement distances between the to-be-corrected patterns adjacent to each other along the first direction in the to-be-corrected image includes: dividing the graph to be corrected adjacent to the graph in the first direction into a plurality of second divided sections in the second direction; and acquiring the distance between the corresponding second segmentation sections in the adjacent graph to be corrected, and taking the distance as the first measurement distance.
Optionally, the area to be corrected is rectangular, the area to be corrected includes a first size along the first direction and a second size along the second direction, and the method for obtaining the area to be corrected includes: acquiring the first size and the second size.
Optionally, the method for obtaining the second size includes: acquiring the width size of the segmentation section of each second segmentation section along the second direction; acquiring a defect segmentation group in the defect graph, wherein the defect segmentation group comprises one or more continuous second segmentation segments, and the first measurement intervals of the second segmentation segments in the defect segmentation group are smaller than a first target interval; obtaining the second size by multiplying the number of the second segments in the defect segment group by the segment width size of the second segments.
Optionally, the method for obtaining the first size includes: and acquiring the first segmentation corresponding to the second segmentation in the defect segmentation group, wherein the first size is the minimum first target interval in the acquired first segmentation.
Optionally, the method further includes: after acquiring the second dimension, further comprising: providing a first rule size; and comparing the second size with the first regular size, if the second size is smaller than the first regular size, extending the area to be corrected along the second direction until the second size is larger than or equal to the first regular size.
Optionally, the method for obtaining the defect pattern in the image to be corrected includes: acquiring a plurality of second target intervals between the target patterns adjacent to each other along the second direction in the target layout; acquiring a plurality of second measurement intervals between the to-be-corrected graphs adjacent to each other along the second direction in the to-be-corrected image; and comparing the second target interval with the second measurement interval, wherein if the second measurement interval is smaller than the corresponding second target interval, the corresponding pattern to be corrected is the defect pattern.
Optionally, the method for obtaining a plurality of second target distances between the target patterns adjacent to each other in the second direction in the target layout includes: dividing the target graph adjacent to the second direction into a plurality of third divided segments along the first direction, wherein the first direction is vertical to the second direction; and acquiring the distance between the corresponding third segmentation sections in the adjacent target graphs, and taking the distance as the second target distance.
Optionally, the method for obtaining a plurality of second measurement distances between the adjacent to-be-corrected graphs along the second direction in the to-be-corrected image includes: dividing the graph to be corrected adjacent to the graph in the second direction into a plurality of fourth division sections in the first direction; and acquiring the distance between the corresponding fourth segmentation sections in the adjacent graph to be corrected, and taking the distance as the second measurement interval.
Optionally, the area to be corrected is rectangular, the area to be corrected includes a third size along the first direction and a fourth size along the second direction, and the method for obtaining the area to be corrected includes: obtaining the third size and the fourth size.
Optionally, the method for obtaining the third size includes: acquiring adjacent target patterns corresponding to the adjacent defect patterns; and acquiring the width size of the target graph adjacent to the target graph along the first direction, wherein the third size is the larger one of the width sizes of the target graphs adjacent to the target graph.
Optionally, after obtaining the third size, the method further includes: providing a second rule size; and comparing the third size with the second regular size, and if the third size is smaller than the second regular size, extending the region to be corrected along the first direction until the third size is larger than or equal to the second regular size.
Optionally, the method for obtaining the fourth size includes: and taking a second target distance adjacent to the target pattern as the fourth size.
Correspondingly, the invention also provides a manufacturing method of the correction mask, which comprises the following steps: providing an initial corrected mask layout and a target layout, wherein the target layout comprises a plurality of target graphs, and the plurality of target graphs extend along a second direction; acquiring an image to be corrected according to the target layout, wherein the image to be corrected comprises a plurality of graphs to be corrected, and the graphs to be corrected correspond to the target graphs; detecting the image to be corrected according to the target layout to obtain an adjacent defect graph in the image to be corrected; acquiring a region to be corrected in the adjacent defect graph; forming a correction graph on the initial correction mask layout according to the region to be corrected to form a correction mask layout; carrying out optical proximity correction processing on the corrected mask layout for a plurality of times to obtain a second optical proximity corrected layout; and manufacturing the correction mask according to the second optical proximity correction layout.
Optionally, the initial corrected reticle layout further has a plurality of cutting patterns.
Correspondingly, the invention also provides a method for forming the semiconductor structure, which comprises the following steps: providing a substrate, wherein the surface of the substrate is provided with a layer to be etched; providing a target layout, wherein the target layout comprises a plurality of target graphs, and the plurality of target graphs extend along a second direction; acquiring an image to be corrected according to the target layout, wherein the image to be corrected comprises a plurality of graphs to be corrected, and the graphs to be corrected correspond to the target graphs; detecting the image to be corrected according to the target layout to obtain an adjacent defect graph in the image to be corrected; acquiring a region to be corrected in the adjacent defect graph; carrying out optical proximity correction processing on the target layout for a plurality of times to obtain a first optical proximity correction layout, and manufacturing a first mask by using the first optical proximity correction layout; carrying out a patterning process on the layer to be etched by taking the first mask as a mask to form a plurality of core layers on the substrate, wherein defective core layers are arranged among the core layers, and defective regions are arranged in the defective core layers; providing an initial correction mask layout; forming a correction graph on the initial correction mask layout according to the region to be corrected to form a correction mask; carrying out optical proximity correction processing on the corrected mask layout for a plurality of times to obtain a second optical proximity corrected layout; manufacturing the correction mask according to the second optical proximity correction layout; and carrying out a graphic process on the core layer by taking the corrected mask as a mask, forming a cutting opening in part of the core layer, and removing the defect region of the defect core layer.
Optionally, the initial corrected reticle layout further has a plurality of cutting patterns.
Compared with the prior art, the technical scheme of the invention has the following advantages:
in the defect detection method of the technical scheme of the invention, the image to be corrected is detected according to the target layout, and a defect graph in the image to be corrected is obtained; and acquiring the area to be corrected in the defect graph. And providing a correction basis for a subsequent correction mask plate through the acquired region to be corrected.
According to the manufacturing method of the corrected mask plate, a corrected graph is formed on the initial corrected mask plate layout according to the area to be corrected, and a corrected mask plate layout is formed; carrying out optical proximity correction processing on the corrected mask layout for a plurality of times to obtain a second optical proximity corrected layout; and manufacturing the correction mask according to the second optical proximity correction layout, and correcting the subsequently formed semiconductor structure through the correction mask so as to improve the yield of the finally formed semiconductor structure.
Furthermore, the initial correction mask layout is also provided with a plurality of cutting patterns, the core layer on the subsequently formed semiconductor structure is cut off through the cutting patterns, and the cutting patterns and the correction patterns are arranged on the same mask, so that the manufacturing cost can be effectively reduced, and meanwhile, the production efficiency can be improved.
According to the forming method of the semiconductor structure, the semiconductor structure is corrected through the correction mask, the defect area in the defect core layer is removed, the problem of core layer short circuit is solved, and the yield of the finally formed semiconductor structure is improved.
Drawings
FIG. 1 is a schematic diagram of a semiconductor structure;
FIG. 2 is a flowchart of a defect detection method according to an embodiment of the invention;
FIGS. 3 to 14 are schematic structural diagrams illustrating steps of a defect detection method according to an embodiment of the present invention;
FIGS. 15 to 16 are schematic structural diagrams illustrating steps of a method for forming a correction mask according to an embodiment of the present invention;
fig. 17 to 19 are schematic structural diagrams of steps of a method for forming a semiconductor structure according to an embodiment of the present invention.
Detailed Description
As described in the background, the yield of the semiconductor structure formed by the mask after the optical proximity correction in the prior art is still to be improved. The following detailed description will be made in conjunction with the accompanying drawings.
Referring to fig. 1, a substrate 100 is provided, the substrate having a layer to be etched (not shown) on a surface thereof; providing a mask (not shown); and carrying out a patterning process on the layer to be etched by taking the mask as a mask, and forming a plurality of core layers 101 on the substrate.
In this embodiment, although the mask is subjected to optical proximity correction for several times, as the current minimum feature size is continuously reduced, a short circuit (bridge) occurs in the pattern in the mask during the exposure process, and if the short circuit phenomenon is solved only by the mask, the short circuit phenomenon is very complicated and difficult or even impossible under certain circumstances, so that the problem of short circuit between the finally formed core layers 101 occurs, and the yield of the finally formed semiconductor structure is affected.
On the basis, the invention provides a defect detection method, a mask manufacturing method and a semiconductor structure forming method, wherein the defect graph in the image to be corrected is obtained by detecting the image to be corrected, and the region to be corrected in the defect graph is further obtained; and improving another type of the correction mask according to the area to be corrected, correcting the semiconductor structure through the improved correction mask in the process of forming the semiconductor structure, removing the part of the core layer short circuit, overcoming the problem of the core layer short circuit, and further improving the yield of the finally formed semiconductor structure.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 2 is a flowchart of a defect detection method according to an embodiment of the present invention, including:
step S21, providing a target layout, wherein the target layout comprises a plurality of target patterns, and the plurality of target patterns extend along a second direction;
step S22, obtaining an image to be corrected according to the target layout, wherein the image to be corrected comprises a plurality of graphs to be corrected, and the graphs to be corrected correspond to the target graphs;
step S23, detecting the image to be corrected according to the target layout to obtain adjacent defect graphs in the image to be corrected;
and step S24, acquiring the area to be corrected in the adjacent defect graph.
The defect detecting step will be described in detail below with reference to the accompanying drawings.
Fig. 3 to 15 are schematic structural diagrams of steps of a defect detection method according to an embodiment of the invention.
Referring to fig. 3, a target layout 100 is provided, where the target layout 100 includes a plurality of target patterns 101, and the plurality of target patterns 101 all extend along a second direction Y.
In the present embodiment, the target pattern 101 is an optical proximity correction target, that is, ideally, a plurality of core layers formed on a wafer subsequently are the same as the plurality of target patterns 101.
Although the ideal core layer is a rectangular long strip, the core layer finally formed on the wafer cannot be a regular rectangular long strip due to the optical proximity effect, and a part of the adjacent core layers may be deformed and shorted.
Referring to fig. 4, an image 200 to be corrected is obtained according to the target layout 100, where the image 200 to be corrected includes a plurality of patterns 201 to be corrected, and the patterns 201 to be corrected correspond to the target pattern 101.
In this embodiment, the method for obtaining the image to be corrected 200 includes: the target layout 100 is subjected to optical proximity correction for several times to obtain a first optical proximity corrected layout (not shown), and the first optical proximity corrected layout is subjected to simulated exposure to obtain the image to be corrected 200.
In other embodiments, the method for obtaining the image to be corrected may further include: providing a semiconductor structure; exposing the semiconductor structure to obtain the image to be corrected; it should be noted that the semiconductor structure is a semiconductor structure actually formed corresponding to the target layout.
After the image 200 to be corrected is obtained, the image 200 to be corrected is detected according to the target layout 100, and adjacent defect patterns in the image 200 to be corrected are obtained. Please refer to fig. 5 to fig. 10 for a specific process.
In this embodiment, the adjacent defect patterns include: and the defect patterns are adjacent in a first direction X, and the first direction X is perpendicular to the second direction Y. Please refer to fig. 5 to 7 for a specific process of acquiring the defect patterns adjacent to each other in the first direction X.
Referring to fig. 5, fig. 5 is an enlarged schematic view of a portion a in fig. 3, and a plurality of first target spacings a1 between the target patterns 101 adjacent to each other along the first direction X in the target layout 100 are obtained.
In this embodiment, the method for obtaining a plurality of first target distances a1 between the target patterns 101 adjacent to each other in the target layout 100 along the first direction X includes: dividing the target patterns 101 adjacent to each other along the first direction X into a plurality of first divided segments 102 along the second direction Y; the distance between the corresponding first segments 102 in the adjacent target patterns 101 is obtained and is used as the first target spacing a 1.
Referring to fig. 6, fig. 6 is an enlarged schematic view of a portion B in fig. 4, and a plurality of first measurement gaps B1 between the to-be-corrected patterns 201 adjacent to each other along the first direction X in the to-be-corrected image 200 are obtained.
In this embodiment, the method for obtaining a plurality of first measurement distances B1 between adjacent patterns 201 to be corrected along the first direction X in the image 200 to be corrected includes: dividing the graph 201 to be corrected adjacent to the graph along the first direction X into a plurality of second divided sections 202 along the second direction Y; and acquiring the distance between the corresponding second segmentation sections 202 in the adjacent graph 201 to be corrected, and taking the distance as the first measurement distance B1.
Referring to fig. 7, the view directions of fig. 7 and fig. 4 are the same, comparing the first target pitch a1 with the first measurement pitch B1, if the first measurement pitch B1 is smaller than the corresponding first target pitch a1, the corresponding pattern 201 to be corrected is the defect pattern 203.
In this embodiment, the adjacent defect patterns 203 further include: the defect patterns 203 adjacent to each other in the second direction Y. Please refer to fig. 8 to 10 for a specific process of obtaining the defect patterns 203 adjacent to each other in the second direction Y
Referring to fig. 8, fig. 8 is an enlarged schematic view of a' in fig. 3, and a plurality of second target distances a2 between the target patterns 101 adjacent to each other along the second direction Y in the target layout 100 are obtained.
In this embodiment, the method for obtaining a plurality of second target distances a2 between the target patterns 101 adjacent to each other in the target layout 100 along the second direction Y includes: dividing the target graph 101 adjacent to the second direction Y into a plurality of third divided segments 103 along a first direction X, wherein the first direction X is perpendicular to the second direction Y; and acquiring the distance between the corresponding third divided segments 103 in the adjacent target graphs 101 as the second target spacing a 2.
Referring to fig. 9, fig. 9 is an enlarged schematic view of a portion B' in fig. 4, and a plurality of second measurement gaps B2 between the to-be-corrected patterns 201 adjacent to each other along the second direction Y in the to-be-corrected image 200 are obtained.
In this embodiment, the method for obtaining a plurality of second measurement distances B2 between adjacent patterns 201 to be corrected along the second direction Y in the image 200 to be corrected includes: dividing the graph 201 to be corrected adjacent to the graph along the second direction Y into a plurality of fourth divided sections 203 along the first direction X; and acquiring the distance between the corresponding fourth segmentation segments 203 in the adjacent graph 201 to be corrected, and taking the distance as the second measurement distance B2.
Referring to fig. 10, comparing the second target pitch a2 with the second measurement pitch B2, if the second measurement pitch B2 is smaller than the corresponding second target pitch a2, the corresponding to-be-corrected pattern 201 is the defective pattern 203.
After the defect pattern 203 is obtained, a region to be corrected in the adjacent defect pattern 203 is obtained. Please refer to fig. 11 to 14 for a specific process.
In this embodiment, the to-be-corrected region is rectangular, the to-be-corrected region includes a first size along the first direction X and a second size along the second direction Y, and the method for obtaining the to-be-corrected regions adjacent to each other in the first direction X includes: acquiring the first size and the second size. Please refer to fig. 11 to fig. 12.
Referring to fig. 11, a segment width dimension c1 of each segment of the second segment 202 along the second direction Y is obtained; acquiring a defect segmentation group in the defect graph 203, wherein the defect segmentation group comprises one or more continuous second segmentation sections 202, and the first measurement intervals B1 of the second segmentation sections 202 in the defect segmentation group are all smaller than a first target interval A1; the second dimension d2 is obtained by multiplying the number of the second segmentation segments 202 in the defect segmentation group by the segmentation width dimension c1 of the second segmentation segments 202.
After obtaining the second dimension d2, further comprising: providing a first regular size R1; comparing the second dimension d2 with the first regular dimension R1, if the second dimension d2 is smaller than the first regular dimension R1, extending the region to be modified S1 along the second direction Y until the second dimension d2 is greater than or equal to the first regular dimension R1.
Since the first rule size R1 is the minimum feature size of a corrected pattern on a subsequent correction mask, if the second size d2 is smaller than the first rule size R1, a corresponding corrected pattern cannot be formed on the correction mask, and therefore, when the second size d2 is smaller than the first rule size R1, the region to be corrected S1 is extended along the second direction Y until the second size d2 is greater than or equal to the first rule size R1.
Referring to fig. 12, the first segment 102 corresponding to the second segment 202 of the defect segment set is obtained, and the first dimension d1 is the minimum first target pitch a1 of the obtained first segment 102.
In this embodiment, the region to be corrected S1 is rectangular, the region to be corrected S1 includes a third dimension along the first direction X and a fourth dimension along the second direction Y, and the method of acquiring the regions to be corrected S1 adjacent to each other in the second direction Y includes: obtaining the third size and the fourth size. Please refer to fig. 13 to fig. 14 for a specific process.
Referring to fig. 13, the adjacent target patterns 101 corresponding to the adjacent defect patterns 203 are obtained; a target feature width dimension c2 (shown in fig. 8) in the first direction X adjacent to the target feature 101 is obtained, and the third dimension d3 is a larger one of the target feature width dimensions c2 adjacent to the target feature 101.
After obtaining the third dimension d3, further comprising: providing a second regular size R2; comparing the third dimension d3 with the second regular dimension R2, if the third dimension d3 is smaller than the second regular dimension R2, extending the region to be modified S1 along the first direction X until the third dimension d3 is greater than or equal to the second regular dimension R2.
Since the second rule size R2 is the minimum feature size of a corrected pattern on a subsequent correction mask, if the third size d3 is smaller than the second rule size R2, a corresponding corrected pattern cannot be formed on the correction mask, and therefore, when the third size d3 is smaller than the second rule size R2, the region to be corrected S1 is extended along the first direction X until the third size d3 is greater than or equal to the second rule size R2.
Referring to fig. 14, the method for obtaining the fourth dimension d4 includes: the fourth dimension d4 is the second target spacing a2 (shown in fig. 8) adjacent to the target feature 101.
Detecting the image 200 to be corrected according to the target layout 100, and acquiring a defect pattern 203 in the image 200 to be corrected; the step of acquiring the region to be corrected S1 in the defect pattern 203 is completed. And providing a correction basis for a subsequent correction mask through the acquired region to be corrected S1.
Accordingly, the embodiment of the present invention further provides a method for manufacturing a correction mask, and please refer to fig. 15 to fig. 16 for a specific forming process.
Referring to FIG. 15, an initial corrected reticle layout 300 is provided.
In this embodiment, the initial corrected reticle layout 300 further has a plurality of cutting patterns 301 thereon. The core layer on the subsequently formed semiconductor structure is cut off through the cutting pattern 301, and the cutting pattern 301 and the correction pattern are arranged on the same mask, so that the manufacturing cost can be effectively reduced, and the production efficiency can be improved.
Referring to fig. 16, a to-be-corrected region S1 obtained by the above defect detection method is provided; and forming a correction graph 302 on the initial correction reticle layout 300 according to the region to be corrected S1 to form a correction reticle layout 400.
In this embodiment, after the corrected reticle layout 400 is obtained, the corrected reticle layout 400 is subjected to optical proximity correction processing for several times to obtain a second optical proximity corrected layout (not shown); and manufacturing the corrected mask (not shown) according to the second optical proximity corrected layout.
And correcting the subsequently formed semiconductor structure through the correction mask plate so as to improve the yield of the finally formed semiconductor structure.
Accordingly, the present invention also provides a method for forming a semiconductor structure, and please refer to fig. 17 to 19 for a specific forming process.
Referring to fig. 17, a substrate 500 is provided, and a layer to be etched 501 is formed on a surface of the substrate 500.
In this embodiment, the base 500 includes a substrate and a device layer on the substrate; in other embodiments, the base may also include only the substrate.
In the embodiment, the substrate is made of silicon; in other embodiments, the substrate may also be germanium or silicon germanium.
Referring to fig. 18, a first mask is manufactured according to the image to be corrected 200 obtained in the defect detection method, a patterning process is performed on the layer to be etched by using the first mask as a mask, a plurality of core layers 502 are formed on the substrate 500,
in the present embodiment, there are defective core layers 503 between several core layers 502, and the defective core layers 503 have a defective region S2 therein.
In the present embodiment, the defective region S2 in the defective core layer 503 corresponds to the region to be corrected S1 in the image to be corrected.
Referring to fig. 19, the modified mask obtained in the above method for manufacturing a modified mask is shown; the core layer 502 is subjected to a patterning process using the corrected mask as a mask, a cut-out opening 504 is formed in a portion of the core layer 502, and the defective region S2 of the defective core layer 503 is removed.
In this embodiment, the cutting openings 504 are formed corresponding to the cutting pattern 301, and the defective regions S2 where the defective core layer 503 is removed are formed corresponding to the correction pattern 302.
In the semiconductor structure formation, the semiconductor structure is corrected through the correction mask 400, and the defect region S2 in the defect core layer 503 is removed, so that the problem of short circuit of the core layer 502 is solved, and the yield of the finally formed semiconductor structure is improved.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (23)

1. A method of defect detection, comprising:
providing a target layout, wherein the target layout comprises a plurality of target graphs, and the plurality of target graphs extend along a second direction;
acquiring an image to be corrected according to the target layout, wherein the image to be corrected comprises a plurality of graphs to be corrected, and the graphs to be corrected correspond to the target graphs;
detecting the image to be corrected according to the target layout to obtain an adjacent defect graph in the image to be corrected;
and acquiring the area to be corrected in the adjacent defect graph.
2. The defect detection method of claim 1, wherein the method of acquiring the image to be corrected comprises: and carrying out optical proximity correction processing on the target layout for a plurality of times to obtain a first optical proximity correction layout, and carrying out simulated exposure processing on the first optical proximity correction layout to obtain the image to be corrected.
3. The defect detection method of claim 1, wherein the method of acquiring the image to be corrected comprises: providing a semiconductor structure; and carrying out exposure processing on the semiconductor structure to obtain the image to be corrected.
4. The defect detection method of claim 1, wherein the adjacent defect patterns comprise: and the defect patterns are adjacent in a first direction, and the first direction is perpendicular to the second direction.
5. The defect detection method of claim 4, wherein the adjacent defect patterns comprise: the defect patterns adjacent to each other in the second direction.
6. The defect detection method of claim 4, wherein the method of obtaining the defect pattern in the image to be corrected comprises: acquiring a plurality of first target intervals between the target patterns adjacent to each other along the first direction in the target layout; acquiring a plurality of first measurement intervals between the to-be-corrected patterns adjacent to each other along the first direction in the to-be-corrected image; and comparing the first target interval with the first measurement interval, wherein if the first measurement interval is smaller than the corresponding first target interval, the corresponding pattern to be corrected is the defect pattern.
7. The defect detection method of claim 6, wherein the method of obtaining a number of first target spacings between the target features adjacent in the first direction in the target layout comprises: dividing the target graph adjacent to the first direction into a plurality of first divided sections along the second direction; and acquiring the distance between the corresponding first segmentation sections in the adjacent target graphs, and taking the distance as the first target distance.
8. The defect detection method of claim 7, wherein the step of obtaining a plurality of first measurement pitches between adjacent patterns to be corrected along the first direction in the image to be corrected comprises: dividing the graph to be corrected adjacent to the graph in the first direction into a plurality of second divided sections in the second direction; and acquiring the distance between the corresponding second segmentation sections in the adjacent graph to be corrected, and taking the distance as the first measurement distance.
9. The defect detection method of claim 8, wherein the area to be corrected is rectangular, the area to be corrected includes a first size along the first direction and a second size along the second direction, and the method for obtaining the area to be corrected includes: acquiring the first size and the second size.
10. The defect detection method of claim 9, wherein the method of obtaining the second dimension comprises: acquiring the width size of the segmentation section of each second segmentation section along the second direction; acquiring a defect segmentation group in the defect graph, wherein the defect segmentation group comprises one or more continuous second segmentation segments, and the first measurement intervals of the second segmentation segments in the defect segmentation group are smaller than a first target interval; obtaining the second size by multiplying the number of the second segments in the defect segment group by the segment width size of the second segments.
11. The defect detection method of claim 10, wherein the method of obtaining the first dimension comprises: and acquiring the first segmentation corresponding to the second segmentation in the defect segmentation group, wherein the first size is the minimum first target interval in the acquired first segmentation.
12. The defect detection method of claim 9, further comprising: after acquiring the second dimension, further comprising: providing a first rule size; and comparing the second size with the first regular size, if the second size is smaller than the first regular size, extending the area to be corrected along the second direction until the second size is larger than or equal to the first regular size.
13. The defect detection method of claim 5, wherein the method of obtaining the defect pattern in the image to be corrected comprises: acquiring a plurality of second target intervals between the target patterns adjacent to each other along the second direction in the target layout; acquiring a plurality of second measurement intervals between the to-be-corrected graphs adjacent to each other along the second direction in the to-be-corrected image; and comparing the second target interval with the second measurement interval, wherein if the second measurement interval is smaller than the corresponding second target interval, the corresponding pattern to be corrected is the defect pattern.
14. The defect detection method of claim 13, wherein the step of obtaining a plurality of second target spacings between adjacent ones of the target features in the target layout along the second direction comprises: dividing the target graph adjacent to the second direction into a plurality of third divided segments along the first direction, wherein the first direction is vertical to the second direction; and acquiring the distance between the corresponding third segmentation sections in the adjacent target graphs, and taking the distance as the second target distance.
15. The defect detection method of claim 14, wherein the step of obtaining a plurality of second measurement pitches between adjacent patterns to be corrected along the second direction in the image to be corrected comprises: dividing the graph to be corrected adjacent to the graph in the second direction into a plurality of fourth division sections in the first direction; and acquiring the distance between the corresponding fourth segmentation sections in the adjacent graph to be corrected, and taking the distance as the second measurement interval.
16. The defect detection method of claim 15, wherein the area to be corrected is rectangular, the area to be corrected includes a third dimension along the first direction and a fourth dimension along the second direction, and the method for obtaining the area to be corrected includes: obtaining the third size and the fourth size.
17. The defect detection method of claim 16, wherein the method of obtaining the third dimension comprises: acquiring adjacent target patterns corresponding to the adjacent defect patterns; and acquiring the width size of the target graph adjacent to the target graph along the first direction, wherein the third size is the larger one of the width sizes of the target graphs adjacent to the target graph.
18. The defect detection method of claim 17, further comprising, after acquiring the third dimension: providing a second rule size; and comparing the third size with the second regular size, and if the third size is smaller than the second regular size, extending the region to be corrected along the first direction until the third size is larger than or equal to the second regular size.
19. The defect detection method of claim 16, wherein the method of obtaining the fourth dimension comprises: and taking a second target distance adjacent to the target pattern as the fourth size.
20. A manufacturing method of a correction mask is characterized by comprising the following steps:
providing an initial correction mask layout;
providing a target layout, wherein the target layout comprises a plurality of target graphs, and the plurality of target graphs extend along a second direction; acquiring an image to be corrected according to the target layout, wherein the image to be corrected comprises a plurality of graphs to be corrected, and the graphs to be corrected correspond to the target graphs; detecting the image to be corrected according to the target layout to obtain an adjacent defect graph in the image to be corrected; acquiring a region to be corrected in the adjacent defect graph;
forming a correction graph on the initial correction mask layout according to the region to be corrected to form a correction mask layout;
carrying out optical proximity correction processing on the corrected mask layout for a plurality of times to obtain a second optical proximity corrected layout;
and manufacturing the correction mask according to the second optical proximity correction layout.
21. The method of claim 20, wherein the initial modified reticle layout further comprises a plurality of cut features thereon.
22. A method of forming a semiconductor structure, comprising:
providing a substrate, wherein the surface of the substrate is provided with a layer to be etched;
providing a target layout, wherein the target layout comprises a plurality of target graphs, and the plurality of target graphs extend along a second direction; acquiring an image to be corrected according to the target layout, wherein the image to be corrected comprises a plurality of graphs to be corrected, and the graphs to be corrected correspond to the target graphs; detecting the image to be corrected according to the target layout to obtain an adjacent defect graph in the image to be corrected; acquiring a region to be corrected in the adjacent defect graph;
carrying out optical proximity correction processing on the target layout for a plurality of times to obtain a first optical proximity correction layout, and manufacturing a first mask by using the first optical proximity correction layout;
carrying out a patterning process on the layer to be etched by taking the first mask as a mask to form a plurality of core layers on the substrate, wherein defective core layers are arranged among the core layers, and defective regions are arranged in the defective core layers;
providing an initial correction mask layout;
forming a correction graph on the initial correction mask layout according to the region to be corrected to form a correction mask;
carrying out optical proximity correction processing on the corrected mask layout for a plurality of times to obtain a second optical proximity corrected layout;
manufacturing the correction mask according to the second optical proximity correction layout;
and carrying out a graphic process on the core layer by taking the corrected mask as a mask, forming a cutting opening in part of the core layer, and removing the defect region of the defect core layer.
23. The method of forming a semiconductor structure of claim 22, wherein the initial modified reticle layout further has a plurality of cut patterns thereon.
CN202010949720.8A 2020-09-10 2020-09-10 Defect detection method, mask manufacturing method and semiconductor structure forming method Pending CN114167681A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117274267A (en) * 2023-11-22 2023-12-22 合肥晶合集成电路股份有限公司 Automatic detection method and device for mask layout, processor and electronic equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117274267A (en) * 2023-11-22 2023-12-22 合肥晶合集成电路股份有限公司 Automatic detection method and device for mask layout, processor and electronic equipment
CN117274267B (en) * 2023-11-22 2024-04-05 合肥晶合集成电路股份有限公司 Automatic detection method and device for mask layout, processor and electronic equipment

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