CN104570584B - A kind of OPC modification method of notch line end - Google Patents
A kind of OPC modification method of notch line end Download PDFInfo
- Publication number
- CN104570584B CN104570584B CN201310485216.7A CN201310485216A CN104570584B CN 104570584 B CN104570584 B CN 104570584B CN 201310485216 A CN201310485216 A CN 201310485216A CN 104570584 B CN104570584 B CN 104570584B
- Authority
- CN
- China
- Prior art keywords
- target value
- line end
- notch
- value position
- axis direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Image Processing (AREA)
Abstract
The present invention relates to a kind of OPC modification methods of notch line end, it include: that step (a) provides the line image with notch line end, it is corrected according to the OPC based on model and the line image is divided into multistage, and generate multiple critical size target values position on the notch line end;The multiple critical size target value position is reduced to a target value position by step (b), and resets the coordinate of the target value position, to obtain best target value position, shortens the correction time.When the present invention for example has line end jaggy for specific line end, after the line end is divided into multistage, multiple target value positions are formed on the line end, then multiple target value positions on the line end are reduced to one, and the coordinate of one target value position of single hole diffraction reasoning and calculation by fraunhofer (fraunhofer), the coordinate of best target value position is obtained, to achieve the purpose that shorten operation time, more efficient is modified.
Description
Technical field
The present invention relates to semiconductor fields, in particular it relates to a kind of OPC modification method of notch line end.
Background technique
Ic manufacturing technology is a complicated technique, and technology innovation is quickly.Characterize ic manufacturing technology
One key parameter is minimum feature size, i.e. critical size (critical dimension, CD), with the contracting of critical size
It is small, or even be contracted to nanoscale, and just because of the reduction of critical size just to be arranged on each chip million devices at
It is possible.
Currently, in advanced semiconductor fabrication process, with lithographic dimensioned smaller and smaller, RET
(RET, resolution enhancement technique) is generally used.Wherein, in 130nm technology node hereinafter, RET
Optical proximity effect correction technique (OPC, optical proximity correction) in technology is as a kind of conventional
Technological means is used.In makeover process, two ways is commonly used, a kind of to be known as rule-based OPC, and another kind is
OPC(MBOPC based on model, Model Based OPC);When selecting MBOPC method, many sides can be cut into shorter
Segmentation, then the CD target value of each segmentation is set, pass through and introduce error factor, the i.e. difference of pattern die analog values and target value
Value, marginal position error (EPE, Edge Placement Error), the result of each circulation (loop) of evaluation OPC.Work as version
When the statistical value of the EPE of all segmentations reaches certain range in figure, it is believed that all segmentation placements terminate;This placement process
The operation repeatedly for generally requiring 3-8 wheel, just can guarantee that the statistical value of the EPE of all segmentations in domain reaches certain range.This
During a, adjacent segmentation has opposite moving direction, causes the repeated multiple times calculating of local location, may be final
EPE value or barely satisfactory.
It is general relatively to fix simultaneously for the placement location of the CD target value of segmentation in existing business software, it is set as
The center of each segmentation or the end of segmentation, naturally it is also possible to manually adjust setting.But these target values are typically all logical
The experience of engineer is crossed to adjust.And the position of these target values directly affects the calculating speed and result of OPC software.
Wherein, in the semiconductor device normal line end as shown in Figure 1, lines of the pattern on left side and right side are equal
For normal straight line, the line end of device described in Fig. 2 is then the lines for having step, and specifically, left side lines are normal, right-hand line
Item is the lines for having step or notch;It is since the Boolean of the pattern of other layers draws that wherein line end, which has lines jaggy,
Rise, the pattern of other described layers can be hole, as shown in figure 3, lines, as shown in Figure 4.The target value of normal line end is only
There is one, as shown in figure 5, and the specific line end (having line end jaggy) may will form multiple target value (target
Points), as shown in fig. 6, and multiple target values are likely to cause the balance (trade off) between multiple target values because
Not all target value is aimed simultaneously, it is therefore desirable to which more steps that calculate are to obtain accurate structure, simultaneously because work
Cheng Shi is needed by moving manually to target value, described to be moved to because the difference of individual experience causes difference.
Currently, situation as shown in Figure 2 is caused to have very much, such as when graph wiring in device fabrication process, often need
Use the operation such as the Boolean calculation in hole, often will lead to some steps and occur, for example, in order to meet design rule (DRC,
Design Rule), some possible places will generate step, as shown in Fig. 2 right figure.
If normal line end without step, normal target value should in the center of line end, as shown in figure 5,
And work as the appearance of such step, target value has been increased by into two o'clock, as shown in fig. 6, this not only can have shadow to the precision of calculating
It rings, while also will affect the time of calculating.Therefore it needs to be improved further current method, to solve the above problems.
Summary of the invention
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.Summary of the invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection scope for attempting to determine technical solution claimed more.
The present invention provides a kind of OPC modification methods of notch line end, comprising:
Step (a) provides the line image with notch line end, is corrected according to the OPC based on model by the line image
It is divided into multistage, and generates multiple critical size target values position on the notch line end;
The multiple critical size target value position is reduced to a target value position by step (b), and resets institute
The coordinate of target value position is stated, to obtain best target value position, shortens the correction time.
Preferably, in the step (b), according to the single hole diffraction reasoning of fraunhofer, in the intensity of the light of any point
It is directly proportional with the dimensioned area of the notch, a target value is reduced by the multiple critical size target value position, and optimize
Target value placement location obtains the best target value position.
Preferably, the single hole diffraction reasoning according to fraunhofer obtains public formula (I), it is described most according to the calculating of public formula (I)
The coordinate P of good target value positionx、Py:
Wherein, A, B are respectively the width of the lines along the x-axis direction and along the y-axis direction, and a, b are respectively the notch along x
The width of axis direction and y-axis direction.
Preferably, the step (a) after the following steps are included:
The lines are divided into multistage and set minimum feature, find out 3 times of the polygon less than the minimum feature,
To determine line end, the line width A of the line end along the x-axis direction is measured.
Preferably, the method also includes:
Width a, the b of the notch along the x-axis direction with y-axis direction are measured, in the polygon to measure the notch
Area.
Preferably, the method also includes: measure the width B of the jagged line end along the y-axis direction.
Preferably, the width B is the width along the y-axis direction for not having side jaggy.
Preferably, the method also includes after determining a best target value position of the notch line end, to institute
State the step of line image carries out OPC amendment.
In the present invention in the OPC makeover process based on model, when for example having line end jaggy for specific line end,
After the line end is divided into multistage, multiple target value positions are formed on the line end, it then will be multiple on the line end
Target value position is reduced to one, and the coordinate for the one target value position of single hole diffraction reasoning and calculation taken by thinkling sound's standing grain, obtains
The coordinate of best target value position makes the best target value position on more reasonable position, when shortening operation to reach
Between purpose, more efficient is modified.
Detailed description of the invention
Following drawings of the invention is incorporated herein as part of the present invention for the purpose of understanding the present invention.Shown in the drawings of this hair
Bright embodiment and its description, device used to explain the present invention and principle.In the accompanying drawings,
Fig. 1 is the structural schematic diagram of the lines with normal line end;
Fig. 2 is the structural schematic diagram of the lines with step;
Fig. 3 is the structural schematic diagram of the lines as caused by hole with step;
Fig. 4 is the structural schematic diagram of the lines as caused by lines with step;
Fig. 5 is the schematic diagram of the graphic object value of normal lines;
Fig. 6 is the schematic diagram of the graphic object value of the lines with step;
Fig. 7 is the schematic diagram of the graphic object value of the lines with step after selecting the method for the invention amendment;
Fig. 8 is that the process of the one specifically OPC modification method of jagged line end described in embodiment of the present invention is selected to show
It is intended to.
Specific embodiment
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid confusion with the present invention, for some technical characteristics well known in the art not into
Row description.
It should give it is noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to exemplary embodiment of the present invention.As used herein, unless the context clearly indicates otherwise, otherwise singular
It is intended to include plural form.Additionally, it should be understood that when using term "comprising" and/or " comprising " in the present specification
When, indicate that there are the feature, entirety, step, operation, element and/or component, but do not preclude the presence or addition of one or more
Other a features, entirety, step, operation, element, component and/or their combination.
Now, an exemplary embodiment of the present invention is more fully described with reference to the accompanying drawings.However, these exemplary realities
Applying example can be implemented with many different forms, and should not be construed to be limited solely to the embodiments set forth herein.It should
These embodiments that are to provide understood are in order to enable disclosure of the invention is thoroughly and complete, and by these exemplary implementations
The design of example is fully conveyed to those of ordinary skill in the art.In the accompanying drawings, for the sake of clarity, using identical appended drawing reference
It indicates identical element, thus description of them will be omitted.
The present invention determines method time-consuming to solve CD target value in certain line end line item in the prior art and not enough
Accurate problem provides a kind of new OPC correction algorithm for specific line end, is pushed away according to the single hole diffraction of fraunhofer
Reason, it is directly proportional with the area of the size in hole in the intensity of the light of any point, it is first when target value when line end OPC is arranged and corrects
Target value is first reduced to a target value, and optimization target values placement location.
Specifically, it the described method comprises the following steps:
Step (a) provides the line image with notch line end, is corrected according to OPC the line image being divided into multistage,
And the multiple critical size target values position generated on the notch line end;
The multiple critical size target value position is reduced to a target value position by step (b), and resets institute
The coordinate of target value position is stated, to obtain best target value position, shortens the correction time.
In the step (b), according to the single hole diffraction reasoning of fraunhofer, any point light intensity with the notch
Size area it is directly proportional, a target value is reduced by the multiple critical size target value position, and optimization target values are put
Seated position obtains the best target value position, specifically, obtains public formula (I), root according to the single hole diffraction reasoning of fraunhofer
The coordinate P of the best target value position is calculated according to public formula (I)x、Py:
Wherein, A, B are respectively the width of the lines along the x-axis direction and along the y-axis direction, and a, b are respectively the notch along x
The width of axis direction and y-axis direction.
In of the invention one specifically embodiment, the boundary of the lines with notch line end is cut in pretreatment first
It is segmented into small line segment, the type correcting process that every line segment is according to the different labels of its position will be using small line segment as place
The basic unit of reason makes pair of correction to different types of line segment using different Remedy strategies and correction target cutting process
As definitely, it is single, avoid situation excessively complicated problem when carrying out global optimization to targeted graphical.
Minimum feature is set in this process, and the lines are divided by small line segment according to the minimum feature, are found out small
In 3 times of polygon of the minimum feature, to determine line end, and the line width A of the line end along the x-axis direction, such as Fig. 2 are measured
It is shown, wherein the place of the line width other than notch along the x-axis direction is measured, rather than measured in indentation, there.
Then the area of the notch is measured, measures width a, the b of the notch along the x-axis direction with y-axis direction respectively, such as
Shown in Fig. 2, the size of the notch on the line end with step is the rectangle of a, b, and measurement obtains the size of the notch,
The area of the notch can be obtained.
Then the length with notch line end (having step line end) is measured, the length is width along the y-axis direction
B does not have the width of side jaggy, the width on the left of line image as shown in Figure 2 specifically, described in measurement as described in Figure 2
B。
In carrying out OPC correction course, multiple target value positions can be formed in the line end, as shown in fig. 6, in the example
The multiple target value position is reduced to one to keep the makeover process quicker by 3 target value positions of middle formation
Target value position, but the coordinate of the target value position cannot indicate to represent the spy of the tool line end jaggy well
Point needs to reset the target value position, and the target value position is arranged in reasonable position, to contract
Short operation time, more efficient is modified.
The seat calibration method of best target value position described in single hole diffraction reasoning and calculation specifically according to fraunhofer are as follows:
In the case where Fraunhofer diffraction is approximate, best target value position P(x, y on receiving screen) optical field amplitude of point is
E(x1,y1) it is Q(x in aperture plane1,y1) at optical field amplitude, it is assumed that have uniform optical field distribution on aperture face,
That is,
E(x1,y1)=A=constant, the optical field amplitude of corresponding back focal plane are as follows:
Wherein,
If opening diffracting is rectangular opening, according to (2) formula, P(x, y on lens focal plane) light amplitude of point is
Wherein, E0=E0(0,0)=Cab is film viewing screen central point P0The optical field amplitude at place, a, b are respectively rectangular opening along X, Y-axis
The width in direction;
α, β are respectively
Then in P(x, y) point luminous intensity be
Wherein I0It is P0The luminous intensity of point, and have I0=| Cab |2(5);
According to known to formula 5, the diffraction pattern of rectangular opening any point luminous intensity, with hole size square at just
Than.It is as shown in Figure 1 normal lines, Fig. 2 is the lines for having step line end.
Wherein, the case where causing Fig. 1 figure has very much, such as when graph wiring, it is often necessary to use the Boolean calculation in hole
Deng operation, often will lead to some steps occurs, as shown in Fig. 2 figure;Such as in order to meet design rule (DRC, Design
Rule), some possible places will generate step, as shown in two right figure of figure.
If normal target value should be in the center of line end, as shown in Figure 5 without step.And when such
The appearance of step, as shown in fig. 6, target value has been increased by into 3 points, this can not only have an impact to the precision of calculating, while can also
Influence the time calculated.
And according to formula 5, the position that can release target value should are as follows:
So the position of target value should as shown in fig. 6, we can directly to calculate target value according to formula 6 reasonable
Position, meanwhile, by reasonable target value point is arranged, so that it may achieve the purpose that shorten operation time.
Specifically, the coordinate P of the best scale value positionx、Py:
The best target value position that tool line end jaggy can be determined by public formula (I), determined it is described most
After good target value position, to the line image carry out OPC amendment the step of.Specifically, then the CD of each segmentation is set
Target value, by introducing error factor, the i.e. difference of pattern die analog values and target value, marginal position error (EPE, Edge
Placement Error), the result of each circulation (loop) of evaluation OPC.When the statistical value of the EPE of segmentations all in domain
When reaching certain range, it is believed that all segmentation placements terminate.
According to the single hole diffraction reasoning of fraunhofer in the method for the invention, the public formula (I) is obtained, and then can be true
The best target value position of the fixed tool line end jaggy, uses the reasoning of single hole diffraction, in reasoning process in the method
The interference effect of other figures, only considers single figure itself around having ignored, though obtain be a kind of approximation as a result,
Right the method has carried out approximate processing in the process, but the position of the line end determined by the method is relative to existing skill
Art is more reasonable, and available good OPC calibration result, saves OPC correction time.
In the present invention in the OPC makeover process based on model, when for example having line end jaggy for specific line end,
After the line end is divided into multistage, multiple target value positions are formed on the line end, it then will be multiple on the line end
Target value position is reduced to one, and the coordinate for the one target value position of single hole diffraction reasoning and calculation taken by thinkling sound's standing grain, obtains
The coordinate of best target value position makes the best target value position on more reasonable position, when shortening operation to reach
Between purpose, more efficient is modified.
Fig. 8 is that the process of the one specifically OPC modification method of jagged line end described in embodiment of the present invention is selected to show
It is intended to, specifically includes the following steps:
Step (a) provides the line image with notch line end, is corrected according to the OPC based on model by the line image
It is divided into multistage, and generates multiple critical size target values position on the notch line end;
The multiple critical size target value position is reduced to a target value position by step (b), and resets institute
The coordinate of target value position is stated, to obtain best target value position, shortens the correction time.
The present invention has been explained by the above embodiments, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, is not intended to limit the invention to the scope of the described embodiments.Furthermore those skilled in the art
It is understood that the present invention is not limited to the above embodiments, introduction according to the present invention can also be made more kinds of member
Variants and modifications, all fall within the scope of the claimed invention for these variants and modifications.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (6)
1. a kind of OPC modification method of notch line end, comprising:
Step (a) provides the line image with notch line end, is corrected according to the OPC based on model and is divided into the line image
Multistage, and multiple critical size target values position is generated on the notch line end;
The multiple critical size target value position is reduced to a target value position by step (b), and resets the mesh
The coordinate of scale value position shortens the correction time to obtain best target value position;Wherein, in the step (b), according to husband thinkling sound
The single hole diffraction reasoning that standing grain takes, it is directly proportional with the dimensioned area of the notch in the intensity of the light of any point, by the multiple pass
Key dimension target value position is reduced to a target value, and optimization target values placement location obtains the best target value position,
Public formula (I) is obtained according to the single hole diffraction reasoning of fraunhofer, the coordinate of the best target value position is calculated according to public formula (I)
Px、Py:
Wherein, A, B are respectively the width of the lines along the x-axis direction and along the y-axis direction, and a, b are respectively the notch along x-axis side
To the width with y-axis direction.
2. the method according to claim 1, wherein the step (a) after the following steps are included:
The lines are divided into multistage and set minimum feature, 3 times of the polygon less than the minimum feature are found out, with true
Alignment end measures the line width A of the line end along the x-axis direction.
3. according to the method described in claim 2, it is characterized in that, the method also includes:
Width a, the b of the notch along the x-axis direction with y-axis direction are measured, in the polygon to measure the face of the notch
Product.
4. the method according to claim 1, wherein the method also includes: measure the jagged line end along y
The width B of axis direction.
5. according to the method described in claim 4, it is characterized in that, the width B is not have side jaggy along the y-axis direction
Width.
6. the method according to claim 1, wherein the method also includes determining the one of the notch line end
Behind a best target value position, to the line image carry out OPC amendment the step of.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310485216.7A CN104570584B (en) | 2013-10-16 | 2013-10-16 | A kind of OPC modification method of notch line end |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310485216.7A CN104570584B (en) | 2013-10-16 | 2013-10-16 | A kind of OPC modification method of notch line end |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104570584A CN104570584A (en) | 2015-04-29 |
CN104570584B true CN104570584B (en) | 2019-06-28 |
Family
ID=53087016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310485216.7A Active CN104570584B (en) | 2013-10-16 | 2013-10-16 | A kind of OPC modification method of notch line end |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104570584B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106682344B (en) * | 2017-01-04 | 2019-12-10 | 上海华虹宏力半导体制造有限公司 | Method for detecting non-rectangular region level of layout |
CN109143773B (en) * | 2018-10-16 | 2022-05-27 | 上海华力微电子有限公司 | Pretreatment method before optical proximity correction |
CN110456615B (en) * | 2019-08-13 | 2021-10-15 | 上海华力集成电路制造有限公司 | Optical proximity effect correction method and correction system thereof |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1749861A (en) * | 2004-03-31 | 2006-03-22 | Asml蒙片工具有限公司 | Apparatus, method and program product for suppressing waviness of features to be printed using photolithographic systems |
CN101013271A (en) * | 2007-01-26 | 2007-08-08 | 浙江大学 | Method for correcting layering optical proximity effect |
CN101349863A (en) * | 2008-08-19 | 2009-01-21 | 浙江大学 | Method for correcting optical approach effect of polygon rim dynamic cutting by configuration sampling |
JP4510118B2 (en) * | 1995-12-22 | 2010-07-21 | 株式会社東芝 | Optical proximity effect correction method and apparatus, optical proximity effect verification method and apparatus, exposure mask manufacturing method, optical proximity effect correction program, and optical proximity effect verification program |
CN102043325A (en) * | 2009-10-13 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | Mask graph correcting method and mask manufacturing method |
CN103186033A (en) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method and manufacture method of connecting holes |
-
2013
- 2013-10-16 CN CN201310485216.7A patent/CN104570584B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4510118B2 (en) * | 1995-12-22 | 2010-07-21 | 株式会社東芝 | Optical proximity effect correction method and apparatus, optical proximity effect verification method and apparatus, exposure mask manufacturing method, optical proximity effect correction program, and optical proximity effect verification program |
CN1749861A (en) * | 2004-03-31 | 2006-03-22 | Asml蒙片工具有限公司 | Apparatus, method and program product for suppressing waviness of features to be printed using photolithographic systems |
CN101013271A (en) * | 2007-01-26 | 2007-08-08 | 浙江大学 | Method for correcting layering optical proximity effect |
CN101349863A (en) * | 2008-08-19 | 2009-01-21 | 浙江大学 | Method for correcting optical approach effect of polygon rim dynamic cutting by configuration sampling |
CN102043325A (en) * | 2009-10-13 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | Mask graph correcting method and mask manufacturing method |
CN103186033A (en) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method and manufacture method of connecting holes |
Also Published As
Publication number | Publication date |
---|---|
CN104570584A (en) | 2015-04-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101311825B (en) | Method for correcting optical adjacency effect | |
US8527914B2 (en) | Flare map calculating method and recording medium | |
CN107844033B (en) | Method for correcting global metal layer process hot spots | |
KR101671322B1 (en) | Method for design and manufacture of a reticle using variable shaped beam lithography | |
CN108828896B (en) | Method for adding sub-resolution auxiliary graph and application of method | |
JP2000003028A (en) | Mask pattern correcting system and its correcting method | |
US20150067619A1 (en) | Advanced correction method | |
TWI493373B (en) | A method of making an ic design layout, ic design layout and a method of locating a pattern in an ic design layout | |
JP2014524135A (en) | Flare calculation and compensation for EUV lithography | |
CN103309150B (en) | Processing method for layout data | |
CN104570584B (en) | A kind of OPC modification method of notch line end | |
CN110361926B (en) | Optical proximity effect correction model, establishment method thereof and mask forming method | |
CN109407460B (en) | Exposure auxiliary pattern adding method | |
CN105824187B (en) | Optical proximity correction method | |
CN106294935B (en) | A kind of process modeling modeling and modification method based on pattern density | |
US10295912B2 (en) | Method for determining the parameters of an IC manufacturing process model | |
TW201308029A (en) | Method and system for forming non-manhattan patterns using variable shaped beam lithography | |
CN105988301B (en) | For the method and optical adjacent correction method of the coverage rate for checking test graphics library | |
JP5888006B2 (en) | Determination method of electron beam dose | |
CN114594655A (en) | Optical proximity effect correction method and system and mask | |
US8910092B1 (en) | Model based simulation method with fast bias contour for lithography process check | |
US8383299B2 (en) | Double patterning mask set and method of forming thereof | |
CN102955363B (en) | Optical proximity correction online monitoring method | |
KR20090000868A (en) | Method for optical proximity correct | |
JPWO2013073694A1 (en) | Method and apparatus for drawing a pattern |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |