CN1438542A - Method for making anti-electrostatic light cover - Google Patents
Method for making anti-electrostatic light cover Download PDFInfo
- Publication number
- CN1438542A CN1438542A CN02105017A CN02105017A CN1438542A CN 1438542 A CN1438542 A CN 1438542A CN 02105017 A CN02105017 A CN 02105017A CN 02105017 A CN02105017 A CN 02105017A CN 1438542 A CN1438542 A CN 1438542A
- Authority
- CN
- China
- Prior art keywords
- light shield
- manufacture method
- electrostatic
- light cover
- cover according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Elimination Of Static Electricity (AREA)
Abstract
In the procedure of manufacturing reticles, the Marangoni dryer technique with antistatic material being added to isopropyl alcohol (IPA) is adopted to carry out the dry treatment so as to form an antistatic layer as the protection layer on the surface of reticle in the period of dry treatment. Thus, damaging the mask on reticles caused by electric static discharge (ESD) can be avoided.
Description
Technical field
The invention relates to a kind of light shield (reticle) manufacture method, particularly, damage to avoid the pattern destruction by electrostatic field on the light shield about a kind of manufacture method of anti-electrostatic light cover.
Background technology
In the semiconductor fabrication processes, little shadow process is a key step, particularly in size of components integrated circuit epoch of miniaturization day by day, makes little shadow process face great challenge.Light shield (reticle), be in order to needed pattern in little shadow process, be defined on the photoresist layer of semi-conductor chip, then semi-conductor chip just further utilize photoresist layer pattern as the basis, carry out follow-up etching or ion implantation and handle.Therefore, light shield has been if problem occurred, also all can't obtain desired pattern and can't reach desired circuit design the improvement of process such as follow-up exposure, development, etching.
Along with dwindling of pattern in the semiconductor fabrication processes, the live width line-spacing of the pattern that is made of crome metal (Cr) on the light shield is also more and more littler, (electric static charge ESC) causes the metal wire on the light shield to produce discharge electrostatic charges (ESD) because of electric field easily to cause electrostatic charge.Yet the high heat during discharge can make crome metal peel off or fuse and destroyed the original pattern of light shield.
In order to solve the mask pattern destruction that static causes, in industrial existing many methods.A kind of is to set about from environment, for example, installs earthing device additional and produce static when preventing hand contact light shield on operator's gloves, or spray the static that ion produces with neutralization on the placement location of light shield and mobile route.But often need a large amount of equipment and cost.Another kind then is to be set about by the material of box for photomask (reticle pod).But, the one, the cost of conversion materials is great, and the 2nd, steppers etc. are all changed possibly in order to the interface of the board of processing box for photomask, also are the problems of cost.
In addition, the TaiWan, China patent discloses a kind of light shield that prevents that the metal Obstruct membrane from peeling off No. 332265, peels off to prevent the Obstruct membrane that discharge electrostatic charges causes with the online useful area that increases the metal Obstruct membrane of metal.Moreover, United States Patent (USP) the 6th, 180 discloses a kind of anlistatig light shield No. 291, be on the patterned layer of light shield, to form the material layer of two-layer differing refraction indices (refractive index) and the mode of one deck tool electric conductivity at least, to reduce the discharge electrostatic charges effect.Yet in the above-mentioned method, manufacture method is comparatively loaded down with trivial details, therefore can increase degree of difficulty and the cost that light shield is made.
Summary of the invention
In view of this; the manufacture method that the purpose of this invention is to provide a kind of anti-electrostatic light cover; when light shield carries out drying (drying) processing; formation one dissipation on light shield, material layer antistatic or conduction are used as protective seam simultaneously, to prevent the pattern on discharge electrostatic charges effect (ESD) the destruction light shield on the light shield.
According to above-mentioned purpose, the present invention proposes a kind of manufacture method of anti-electrostatic light cover, comprises the following steps: to form in a substrate shielding layer; Definition etching shielding layer is to form the patterned layer of a light shield; Light shield is cleaned to remove slag bits residual on the patterned layer; And feed nitrogen and a mixed liquor so that light shield is carried out dried, use the moisture removed on the light shield and form an antistatic layer on this light shield surface, wherein utilizing the Marangon dry technology to carry out dried and mixed liquor is that anti-static material is dissolved in alcohols solvent and forms.Moreover alcohols solvent is that isopropyl alcohol (IPA) and anti-static material are a kind of of quaternary ammonium compound compound (4 ° of amide) and cationic polymer (cationic polymer).
This substrate is a quartz glass, and this shielding layer is the chromium metal, this light shield washed with de-ionized water, and the thickness of this antistatic layer is in the scope of 100 to 1000 dusts.
According to anti-electrostatic light cover manufacture method of the present invention, effectively prevented the infringement that the discharge electrostatic charges effect causes light shield.Simultaneously because antistatic layer is to form during the Marangon dried carrying out, therefore have the antistatic layer coating evenly, advantage such as process is simple.
Description of drawings
Fig. 1 to Fig. 6 is the diagrammatic cross-section of drawing according to the anti-electrostatic light cover manufacturing process of the embodiment of the invention.
The number in the figure explanation:
100 ~ substrate;
102 ~ shielding layer;
102a ~ patterned layer;
103,107 ~ light shield;
104 ~ photoresist layer;
104a ~ patterning photoresist layer;
106 ~ antistatic layer;
110 ~ sink;
112 ~ deionized water;
112a ~ hydrone.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperation Fig. 1-Fig. 6 are described in detail below:
The anti-electrostatic light cover manufacture method of the embodiment of the invention:
At first, please refer to Fig. 1, comprise a transparent substrate 100, for example a quartz glass then forms a shielding layer 102, for example chromium metal level, an and photoresist layer 104 in regular turn in substrate 100.
Next, please refer to Fig. 2, adopt known little shadow job sequence to form patterning photoresist layer 104a and to expose shielding layer 102 surfaces.Then, shielding layer 102 surfaces that etching is exposed, to form a patterned layer 102a as the pattern of light shield 103.Then remove patterning photoresist layer 104a, tentatively to finish the making of light shield 103, as shown in Figure 3.Subsequently, whether adhere to specification with patterned layer 102a profile and size on the known detection method check light shield 103.
Next, please refer to Fig. 4, after inspection is errorless, need clean the slag bits (not illustrating) that after the lithography process, residue in light shield 103 surfaces to remove light shield.That is, light shield 103 is inserted the sink 110 that is full of deionized water (DI water) 112 consider to be worth doing or particulate (particle) to remove residual slag.Subsequently, must dehydrate step, to remove it because of cleaning the hydrone that step is adsorbed in the surface to light shield 103.
Please refer to Fig. 5, after cleaning step, come light shield 103 is carried out dried with Marangon dry technology (Marangonidryer), it mainly is to utilize alcohols solvent, isopropyl alcohol (IPA) for example, the surface tension different with deionized water 112 absorbs the hydrone 112a that is attached to light shield 103 surfaces and flows back to sink 110 and reach the purpose that dehydrates.
Below describe above-mentioned dried step in detail.Especially, in the present embodiment, when carrying out the Marangon dried, be to use a mixed liquor to replace original isopropyl alcohol (IPA) solvent.This mixed liquor is by anti-static material, and for example quaternary ammonium compound compound (4 ° of amide) or cationic polymer are dissolved in isopropyl alcohol (IPA) solvent and form.At first, the light shield of cleaning 103 is slowly pulled out the water surface from sink 110.Then, the feeding temperature is 82 ℃ nitrogen (N
2) as transport gas, above-mentioned mixed liquor is blowed to light shield 103 surfaces, make its lip-deep IPA concentration greater than deionized water 112 concentration, cause the surface tension of the surface tension of IPA less than liquid in the groove 110, therefore, the hydrone 112a on light shield 103 surfaces is subjected to effect of surface tension and along with in the sucked back groove 110 of IPA steam (not illustrating) and remove moisture on the light shield 103, as shown in Figure 5.In addition; in the present embodiment; anti-static material in the mixed liquor can be during carrying out dried simultaneously uniform deposition in whole light shield 103 surfaces; and after blowing 8 minutes via 82 ℃ nitrogen; form an antistatic layer 106; with as the reticle protection layer, its thickness is in the scope of 100 to 1000 dusts, as shown in Figure 6.Thus, just finish the making of anti-electrostatic light cover 107 of the present invention.
In general, the pattern line-width on the light shield is 1 micron, just can cause the mask pattern infringement when potential difference (PD) is 2000 volts; If pattern line-width is 0.4 micron,, can cause the mask pattern infringement as long as potential difference (PD) is 700 volts.Yet the inventor applies a voltage (700 to 15000 volts) with a charge plates (charge plate) and also continues 30 seconds in the light shield 107 of the manufacturing according to the present invention.After then measuring, find that light shield 107 is subjected to the protection of antistatic layer 106, can not produce potential difference (PD) between quartz glass substrate 100 and the chromium metal level 102a, therefore do not have discharge electrostatic charges (ESD) and produce via electrometer of field strength (field meter).Moreover with the light shield detecting device that industry is used, for example Startlight of KLA company manufacturing, and optical microscope (OM) detects anti-electrostatic light cover 107 of the present invention, finds that the pattern of light shield 107 there is no damage.Therefore, according to anti-electrostatic light cover manufacture method of the present invention, can effectively prevent the infringement that the discharge electrostatic charges effect causes light shield.Simultaneously because antistatic layer is to form during the Marangon dried carrying out, therefore have the antistatic layer coating evenly, advantage such as process is simple.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; anyly be familiar with this operator; without departing from the spirit and scope of the present invention; when doing to change and retouching; therefore protection scope of the present invention, should with claims protection of present patent application scope was defined is as the criterion.
Claims (8)
1. the manufacture method of an anti-electrostatic light cover comprises the following steps:
In a substrate, form a shielding layer;
This shielding layer of definition etching is to form the patterned layer of a light shield;
This light shield is cleaned to remove slag bits residual on this patterned layer; And
Feed nitrogen and a mixed liquor so that this light shield is carried out dried, with remove on this light shield moisture and at this light shield surface formation one antistatic layer, wherein this mixed liquor is that anti-static material is dissolved in alcohols solvent and forms.
2. the manufacture method of anti-electrostatic light cover according to claim 1 is characterized in that, this dried is to utilize the Marangon dry technology.
3. the manufacture method of anti-electrostatic light cover according to claim 1 is characterized in that, this substrate is a quartz glass.
4. the manufacture method of anti-electrostatic light cover according to claim 1 is characterized in that, this shielding layer is the chromium metal level.
5. the manufacture method of anti-electrostatic light cover according to claim 1 is characterized in that, with this light shield of washed with de-ionized water.
6. the manufacture method of anti-electrostatic light cover according to claim 1 is characterized in that, this alcohols solvent is an isopropyl alcohol.
7. the manufacture method of anti-electrostatic light cover according to claim 1 is characterized in that, this anti-static material is a kind of of quaternary ammonium compound compound and cationic polymer.
8. the manufacture method of anti-electrostatic light cover according to claim 1 is characterized in that, the thickness of this antistatic layer is in the scope of 100 to 1000 dusts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021050171A CN1215374C (en) | 2002-02-10 | 2002-02-10 | Method for making anti-electrostatic light cover |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021050171A CN1215374C (en) | 2002-02-10 | 2002-02-10 | Method for making anti-electrostatic light cover |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1438542A true CN1438542A (en) | 2003-08-27 |
| CN1215374C CN1215374C (en) | 2005-08-17 |
Family
ID=27672126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021050171A Expired - Lifetime CN1215374C (en) | 2002-02-10 | 2002-02-10 | Method for making anti-electrostatic light cover |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1215374C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8383301B2 (en) | 2008-11-05 | 2013-02-26 | Micron Technology, Inc. | Methods of fabricating reticles with subdivided blocking regions |
| CN110928135A (en) * | 2019-12-20 | 2020-03-27 | 武汉新芯集成电路制造有限公司 | Photomask for preventing electrostatic damage and method for preventing electrostatic damage of photomask |
| CN113608407A (en) * | 2021-08-18 | 2021-11-05 | 业成科技（成都）有限公司 | Mask, preparation method thereof and exposure method |
-
2002
- 2002-02-10 CN CNB021050171A patent/CN1215374C/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8383301B2 (en) | 2008-11-05 | 2013-02-26 | Micron Technology, Inc. | Methods of fabricating reticles with subdivided blocking regions |
| US8822108B2 (en) | 2008-11-05 | 2014-09-02 | Micron Technology, Inc. | Reticles with subdivided blocking regions |
| CN110928135A (en) * | 2019-12-20 | 2020-03-27 | 武汉新芯集成电路制造有限公司 | Photomask for preventing electrostatic damage and method for preventing electrostatic damage of photomask |
| CN110928135B (en) * | 2019-12-20 | 2023-09-08 | 武汉新芯集成电路制造有限公司 | Photomask for preventing electrostatic damage and method for preventing electrostatic damage of photomask |
| CN113608407A (en) * | 2021-08-18 | 2021-11-05 | 业成科技（成都）有限公司 | Mask, preparation method thereof and exposure method |
| CN113608407B (en) * | 2021-08-18 | 2023-12-05 | 业成科技（成都）有限公司 | Mask, preparation method and exposure method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1215374C (en) | 2005-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8002899B2 (en) | Method and apparatus for mask pellicle adhesive residue cleaning | |
| US7387855B2 (en) | Anti-ESD photomask blank | |
| US7726891B2 (en) | Substrate processing apparatus and substrate processing method | |
| US20120279519A1 (en) | Integrated Substrate Cleaning System and Method | |
| JP2007208233A (en) | Device and method for processing substrate | |
| US4537813A (en) | Photomask encapsulation | |
| CN1215374C (en) | Method for making anti-electrostatic light cover | |
| WO2003082486A1 (en) | Removal of contaminants using supercritical processing | |
| US9929215B2 (en) | Method of optimizing an interface for processing of an organic semiconductor | |
| US7514184B2 (en) | Reticle with antistatic coating | |
| KR20200122979A (en) | Semiconductor processing apparatus and method utilizing electrostatic discharge (esd) prevention layer | |
| US7029800B2 (en) | Reticle with antistatic coating | |
| US6765645B1 (en) | De-pellicle tool | |
| US6893780B1 (en) | Photomask and method for reducing electrostatic discharge on the same with an ESD protection pattern | |
| TW509977B (en) | Manufacturing method of anti-static-charge | |
| US9721783B2 (en) | Methods for particle reduction in semiconductor processing | |
| CN1203523C (en) | Double-layer photoetching process | |
| JP2015180962A (en) | Photolithographic reticle with electrostatic discharge protection structure | |
| JP2003142475A (en) | Method for manufacturing semiconductor device | |
| KR100554964B1 (en) | Photoresist stripping composition and method of forming a pattern using the same | |
| US20050260503A1 (en) | Reticle film stabilizing method | |
| Hattori | Particle reduction in VLSI manufacturing | |
| US6777379B2 (en) | Cleaning solution and method of cleaning anti-reflective coating composition using the same | |
| Bhattacharyya et al. | Reduction of extra pattern defects in immersion layer reworks by cleans recipe optimization: CFM: Contamination free manufacturing | |
| KR20230111890A (en) | Substrate treatment method and substrate treatment system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20050817 |
|
| CX01 | Expiry of patent term |