CN1459667A - Light cage for preventing electrostatic break down - Google Patents
Light cage for preventing electrostatic break down Download PDFInfo
- Publication number
- CN1459667A CN1459667A CN 02119722 CN02119722A CN1459667A CN 1459667 A CN1459667 A CN 1459667A CN 02119722 CN02119722 CN 02119722 CN 02119722 A CN02119722 A CN 02119722A CN 1459667 A CN1459667 A CN 1459667A
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- seal ring
- light shield
- pattern
- interrupted
- patterns
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- Elimination Of Static Electricity (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
An optical mask able to prevent electrostatic destroy features that an endless pattern is formed, which is near the edge of Cr metal of optical mask, an internal endless ring and several external endless rings parallel to the internal one. Several fine needles are between said internal and external rings. The one end of each needle is connected to internal or external ring and the other end is free. Each external ring is connected to only one needle.
Description
Technical field
The present invention discloses a kind of light shield that prevents electrostatic breakdown, and particularly relevant a kind of pattern that adds the similar lightning rod that exposes to the sun when making light shield that utilizes is accumulated to avoid it in time issuable static charge is led in the mode of arc discharge, and undermines the pattern on the light shield.
Background technology
Among manufacture of semiconductor, be not only process quality managerial demand monitor closely layer by layer, produce to prevent any incident that undermines yield, the design of assembly with the concentration class of raising unit area, and improves assembly function also towards minification; The more important thing is the economic worth that improves product.Yet owing to follow the quick rising of concentration class, interconnect is more intensive, and makes design specifications (design rule), micro-photographing process, etching technique increase its difficulty synchronously.In addition, not only the MOSFET gate pole oxidation layer because attenuation and more to static charge discharge (electric static discharge; Be called for short ESD) the behavior sensitivity, need prevent with ESD circuit protection circuit, in addition more the light shield of upstream all to ESD behavior sensitivity.
Light shield utilizes transparency as base plate usually, the opaque material formation pattern that is formed on the base plate will be as the pattern that is transformed on the photoresistance, making the accurate of the necessary ten minutes of this pattern, because any aperture on the pattern or unfilled corner of being formed at all will become a part for the photoresistance pattern, and the meeting of traditional light shield causes static to concentrate on pattern wedge angle part on the light shield, the static of this concentrations forms high electric field and causes the unfilled corner collapse, this phenomenon will form the unfilled corner of pattern can't do correct conversion to pattern, and be about four to five times of amplifications of pattern on the semiconductor crystal wafer because of mask pattern, therefore on the light shield if the small unusual amplification that also can impact is arranged, very huge for follow-up micro-photographing process influence.
For instance, light shield be via little shadow technology at nonconducting glass material such as quartz coated with the metal lead foil, form pattern with electron beam at the metal lead foil again and constituted.Light shield since slip-stick artist's hand of operation touch or because and the light shield fixed mount touch or stowed location at ordinary times all may cause the accumulation of static, when buildup of static electricity to a certain degree the time, if there is not suitable electrostatic guide path, just can be via discharging between the lead on the light shield, and the particle that pollutes, even more seriously cause bridge formation (bridge) phenomenon of chromium pattern.
Summary of the invention
Purpose of the present invention is for providing a kind of structure of light shield, and the structure of this light shield can improve the protective capability of static discharge.
Another object of the present invention provides a kind of photomask structure that prevents static discharge of tool phase isogeneous induction current potential.
The present invention is a kind of light shield that prevents electrostatic breakdown, utilize the transparent material of light as the light shield pedestal, have the integrated circuit pattern on the light shield pedestal, this mask pattern will be as the pattern that is converted to wafer, and this mask pattern is to utilize conduction but lighttight chromium metal constitutes.For preventing electrostatic charges accumulated discharge effect, at first the chromium metal on light shield forms a circular pattern near edge, and this circular pattern tool internal sealed ring wherein is with apart equidistant and plurality of separate that becomes to be arranged in parallel with internal sealed ring seal ring outward.And, have a plurality of fine little pins between inside and outside seal ring, an end of each fine little pin respectively with one being connected wherein of inside and outside seal ring, the other end then keeps a space with the inside and outside seal ring of correspondence.Wherein above-mentioned each separated outer seal ring and only connected a fine little pin.
Thus, the present invention has significant effect: avoided the particle pollution that discharge causes between the lead on the light shield, most importantly avoided the generation that connects the bridge phenomenon of chromium pattern.
Description of drawings
Figure 1 shows that according to embodiments of the invention at the skeleton diagram that forms circular pattern coated with the edge of nonconducting glass material of metal lead foil.
Figure 2 shows that part circular pattern enlarged outline map according to embodiments of the invention.
Figure 3 shows that fine little pin forms the skeleton diagram of bridge joint phenomenon.
Figure 4 shows that according to embodiments of the invention and form the outer seal ring skeleton diagram of separation.
The figure number explanation:
10 glass materials, 12 outer seal rings
14 internal sealed rings, 16 fine little pins
18 integrated circuit patterns, 20 circular patterns
22 spaces, 24 bridge joints
26 separate outer seal ring
Embodiment
Do not limiting under spirit of the present invention and the range of application, below promptly with an embodiment, introduce enforcement of the present invention; Be familiar with this field skill person, after understanding spirit of the present invention, but when adopting said method in the light shield design of various tool electrostatic discharge (ESD) protection.By structure of the present invention, can effectively static charge be directed to and be positioned on the light shield chromium metal, in edge's circular pattern, the static charge of avoiding accumulating to discharge via the part of most fragile in the light shield, causes light shield to damage.Application of the present invention is as the embodiment that is not limited only to the following stated.
Described just like background of invention, the problem of static discharge has not just betided touching of chip pin and has reached intraware again, and it also can occur on the light shield of upstream more.Particularly when the integrated circuit package microminiaturization, today that concentration class is high, its influence property will more serious, and this is four to five times of amplifications that are about pattern on the semiconductor crystal wafer because of mask pattern, thus on the light shield as if the small amplification that also can impact is unusually arranged.Therefore a slice light shield may be out of question when exposing to the sun former batches wafer, but thereafter may be because the external static electrification influence, cause the IC pattern on the light shield to damage, feasible wafer after light shield exposes thus produces electrically failure, its influence will cause the quick decline of yield in one's power.Therefore the present invention promptly is at this point, proposes a kind of light shield that prevents electrostatic breakdown.
Please refer to shown in Figure 1, at nonconducting glass material 10, on quartz, at the circular pattern 20 that forms near the edge of this glass material 10 just like moat coated with the metal lead foil, this circular pattern 20 comprises internal sealed ring 14 and outer seal ring 12, is integrated circuit pattern 18 in the circular pattern inboard.
Then seeing also the subregion enlarged drawing that Figure 2 shows that circular pattern 20, is to comprise a plurality of (normally hundreds of fine little pin 16 formed circular patterns 20 to thousands of strip metal chromium.Wherein 12 of internal sealed ring 14 and outer seal rings have a plurality of fine little pins 16, and one of them of an end of each this fine little pin 16 and internal sealed ring 14 or outer seal ring 12 be connected, and the other end then and corresponding internal sealed ring 14 or 12 reservations of outer seal ring, one space 22.That is, if a fine little pin 16 is to be connected on outer seal ring 12, and and 14 of internal sealed rings leave a space, then facing another 16 on the fine little pin that connects with it is to be connected on internal sealed ring 14, and and 12 of outer seal rings leave a space wherein this space 22 be in order to static is discharged.Because circular pattern 20 of the present invention is the peripheries that are positioned at integrated circuit pattern 18, and each fine little pin 16 is to be used for the same material of metal of shield lights with light shield, be to be crome metal in this most preferred embodiment, therefore, can be easily form simultaneously when making light shield, so can reduce cost.
The formation of wherein above-mentioned fine little pin 16 is when writing mask pattern in lead foil with electron beam, writes the pattern of these thousands of fine little pins 16 simultaneously.According to a preferred embodiment of the present invention, each fine little pin 16 and internal sealed ring 14 or 12 of outer seal rings have one and keep space 22, and each fine little pin 16 its width W 2, under processing procedure with 0.18 μ m, it is wide to be about 0.72 μ m, and the width W 1 in reservation space 22 can equal W2.When being subjected to extraneous dry environment or the casual collision of staff or friction and causing static, fine little pin 16 can be discharged on internal sealed ring 14 or the outer seal ring 12 via space 22.Wherein fine little pin 16 interval to each other, that is the width of W is about 1000 μ m among the figure.
Yet but there is a kind of potential danger in this traditional light shield layout.Consult Fig. 3,, cause itself and pairing internal sealed ring 14 or 12 generation bridge joints of outer seal ring phenomenon, shown in figure number 24 in case the thin tiny needle 16 of part is discharged because of buildup of static electricity.This moment since internal sealed ring 14 and outer seal ring 12 therefore bridge joint link together, cause desire to form next time because of tiny needle 16 buildup of static electricity carefully and discharge when forming another bridge joint phenomenon potential difference (PD) that need be bigger.But so big again electrostatic interaction may cause the damage of internal integration circuit down.
Consult Fig. 4, therefore, because of bridge joint causes the generation of electrostatic discharge (ESD) protection potential difference, the mode of utilizing electron beam to write once more allows outer seal ring 12 form situation separated from one another with the distance that equates for fear of above-mentioned.Wherein each piece separates outer seal ring 26 and has the size that is equal to, and has equidistance W3 to each other, and the outer seal ring 26 of each separation all only has a thin tiny needle 16.With this most preferred embodiment, separate outer seal ring 26 and equate with the width W 1 in space 22, that is with the processing procedure of 0.18 μ m, it is apart from being about 0.72 μ m than around here distance W 3.
When there was buildup of static electricity the inside of separating outer seal ring 26, static can reach fine little pin 16 through the space 22 and discharge by the outer seal ring 26 of separation.Because, the present invention is to use the outer seal ring 26 of separation independently of one another, therefore the buildup of static electricity of above-mentioned thin tiny needle 16 discharge, the internal sealed ring 14 that is caused and the bridge joint phenomenon of outer seal ring 12 are to be independent event, that is, each separates the bridge joint phenomenon of outer seal ring 26, can't have influence on the potential difference (PD) that whole static discharge should bear, thus the present invention have the electrostatic discharge capacity of bearing that is equal to can't be because of individual other bridge joint phenomenon, and cause the volt that bears static moving.
Claims (12)
1. a tool prevents the light shield of electrostatic breakdown, comprises at least:
One light shield pedestal is formed with transmission substance;
One light tight conductive film, be formed at this light shield pedestal on;
A plurality of interrupted seal ring patterns, tool equates interrupted length and equidistant separation, is surrounded on this light tight conductive film periphery;
One seal ring pattern to be parallel to the mode of these a plurality of interrupted seal ring patterns, is arranged in this a plurality of interrupted seal ring patterns inboard; And
A plurality of needle patterns, between this seal ring pattern and this a plurality of interrupted seal ring patterns, and an end of these a plurality of needle patterns is connected with a plurality of interrupted seal ring patterns of this seal ring pattern and this respectively at interval mode, and the other end then keeps an equidistant space.
2. a kind of tool according to claim 1 prevents the light shield of electrostatic breakdown, it is characterized in that: described light shield pedestal is that glass is formed.
3. a kind of tool according to claim 1 prevents the light shield of electrostatic breakdown, it is characterized in that: described light tight conductive film is the chromium metal.
4. a kind of tool according to claim 1 prevents the light shield of electrostatic breakdown, it is characterized in that: described each interrupted seal ring pattern only is connected with a needle pattern separately respectively.
5. a kind of tool according to claim 1 prevents the light shield of electrostatic breakdown, it is characterized in that: described needle pattern width equals this equidistant space.
6. a kind of tool according to claim 1 prevents the light shield of electrostatic breakdown, it is characterized in that: the equidistant separation distance of described interrupted seal ring pattern equates with this equidistant gap length.
7. one kind forms the method that tool prevents electrostatic breakdown on the light shield pedestal, the light tight conductive film of last tool of this light shield pedestal wherein, and this method comprises at least:
Form a plurality of interrupted seal ring pattern that tool equates interrupted length and equidistant separation, be surrounded on this light tight conductive film periphery;
Form a seal ring pattern,, be arranged in this a plurality of interrupted seal ring patterns inboard to be parallel to the mode of these a plurality of interrupted seal ring patterns; And
Form a plurality of needle patterns between this seal ring pattern and this a plurality of interrupted seal ring patterns, wherein an end of these a plurality of needle patterns is connected with a plurality of interrupted seal ring patterns of this seal ring pattern and this respectively with interval mode, and the other end then keeps an equidistant space.
8. method according to claim 7 is characterized in that: described light shield pedestal is that glass is formed.
9. method according to claim 7 is characterized in that: described light tight conductive film is the chromium metal.
10. method according to claim 7 is characterized in that: described each interrupted seal ring pattern only is connected with a needle pattern separately respectively.
11. method according to claim 7 is characterized in that: described needle pattern width equals this equidistant space.
12. method according to claim 7 is characterized in that: the equidistant separation distance of described interrupted seal ring pattern equates with this equidistant gap length.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02119722 CN1212542C (en) | 2002-05-15 | 2002-05-15 | Light cage for preventing electrostatic break down |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02119722 CN1212542C (en) | 2002-05-15 | 2002-05-15 | Light cage for preventing electrostatic break down |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1459667A true CN1459667A (en) | 2003-12-03 |
| CN1212542C CN1212542C (en) | 2005-07-27 |
Family
ID=29426867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02119722 Expired - Lifetime CN1212542C (en) | 2002-05-15 | 2002-05-15 | Light cage for preventing electrostatic break down |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1212542C (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100344210C (en) * | 2004-05-11 | 2007-10-17 | 家登精密工业股份有限公司 | Antistatic device of box of carrying optical mask |
| CN102569265A (en) * | 2012-01-18 | 2012-07-11 | 上海华力微电子有限公司 | Mask plate static electricity resisting ring |
| CN105489641A (en) * | 2014-08-08 | 2016-04-13 | 台湾类比科技股份有限公司 | Semiconductor structure for electrostatic protection |
| CN109270786A (en) * | 2018-12-10 | 2019-01-25 | 长江存储科技有限责任公司 | A kind of mask plate |
| CN110928135A (en) * | 2019-12-20 | 2020-03-27 | 武汉新芯集成电路制造有限公司 | Photomask for preventing electrostatic damage and method for preventing electrostatic damage of photomask |
| CN111323952A (en) * | 2020-03-16 | 2020-06-23 | Tcl华星光电技术有限公司 | LCD mother board |
| WO2020147059A1 (en) | 2019-01-17 | 2020-07-23 | Yangtze Memory Technologies Co., Ltd. | Photomask with electrostatic discharge protection |
| CN111694213A (en) * | 2019-03-14 | 2020-09-22 | 华邦电子股份有限公司 | Anti-static light shield |
-
2002
- 2002-05-15 CN CN 02119722 patent/CN1212542C/en not_active Expired - Lifetime
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100344210C (en) * | 2004-05-11 | 2007-10-17 | 家登精密工业股份有限公司 | Antistatic device of box of carrying optical mask |
| CN102569265A (en) * | 2012-01-18 | 2012-07-11 | 上海华力微电子有限公司 | Mask plate static electricity resisting ring |
| CN105489641A (en) * | 2014-08-08 | 2016-04-13 | 台湾类比科技股份有限公司 | Semiconductor structure for electrostatic protection |
| CN109270786A (en) * | 2018-12-10 | 2019-01-25 | 长江存储科技有限责任公司 | A kind of mask plate |
| CN109270786B (en) * | 2018-12-10 | 2022-03-15 | 长江存储科技有限责任公司 | Mask plate |
| WO2020147059A1 (en) | 2019-01-17 | 2020-07-23 | Yangtze Memory Technologies Co., Ltd. | Photomask with electrostatic discharge protection |
| EP3850431A4 (en) * | 2019-01-17 | 2022-04-27 | Yangtze Memory Technologies Co., Ltd. | Photomask with electrostatic discharge protection |
| US11493842B2 (en) | 2019-01-17 | 2022-11-08 | Yangtze Memory Technologies Co., Ltd. | Photomask with electrostatic discharge protection |
| CN111694213A (en) * | 2019-03-14 | 2020-09-22 | 华邦电子股份有限公司 | Anti-static light shield |
| CN111694213B (en) * | 2019-03-14 | 2023-12-19 | 华邦电子股份有限公司 | Anti-static photomask |
| CN110928135A (en) * | 2019-12-20 | 2020-03-27 | 武汉新芯集成电路制造有限公司 | Photomask for preventing electrostatic damage and method for preventing electrostatic damage of photomask |
| CN110928135B (en) * | 2019-12-20 | 2023-09-08 | 武汉新芯集成电路制造有限公司 | Photomask for preventing electrostatic damage and method for preventing electrostatic damage of photomask |
| CN111323952A (en) * | 2020-03-16 | 2020-06-23 | Tcl华星光电技术有限公司 | LCD mother board |
| CN111323952B (en) * | 2020-03-16 | 2022-11-25 | Tcl华星光电技术有限公司 | LCD mother board |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1212542C (en) | 2005-07-27 |
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Granted publication date: 20050727 |