CN110923819A - Method for manufacturing silicon seed crystal with high orientation precision - Google Patents

Method for manufacturing silicon seed crystal with high orientation precision Download PDF

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CN110923819A
CN110923819A CN201911072014.3A CN201911072014A CN110923819A CN 110923819 A CN110923819 A CN 110923819A CN 201911072014 A CN201911072014 A CN 201911072014A CN 110923819 A CN110923819 A CN 110923819A
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theta
silicon
face
silicon wafer
diameter
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季振国
李阳阳
席俊华
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Hangzhou Dianzi University
Hangzhou Electronic Science and Technology University
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention relates to a method for manufacturing a silicon seed crystal with high orientation precision. Marking two mutually perpendicular diameters on one end face of a cylindrical silicon single crystal ingot, marking four straight lines on the side wall of the cylinder along the axial direction, cutting a wafer-shaped silicon wafer at one end with the marked diameter, orienting the silicon wafer according to the four straight lines, determining the deviation degree and the deviation direction of the silicon wafer from a specific crystal direction, marking a starting point on the circumference of the silicon wafer according to the direction, restoring the silicon wafer to the original position of the silicon single crystal ingot, placing the silicon wafer on a base, raising the position, corresponding to the starting point, on the other end face according to the deviation degree, sleeving a sleeve on the base, injecting epoxy resin and curing, and finally drilling a cylindrical seed crystal according to the required diameter of the silicon seed crystal. The method has clear principle and simple method, and the manufactured silicon seed crystal has high orientation precision. The shape of the czochralski silicon single crystal pulled by the high-precision seed crystal is close to a circle, and no obvious flat edge structure exists.

Description

Method for manufacturing silicon seed crystal with high orientation precision
Technical Field
The invention belongs to the technical field of electronic information materials, and relates to a method for manufacturing a silicon seed crystal with high orientation precision, in particular to a method for manufacturing a seed crystal for pulling a czochralski silicon single crystal, which can be used for manufacturing the seed crystal with high orientation precision.
Background
The czochralski silicon single crystal is a base material for manufacturing electronic components, and the quality of the czochralski silicon single crystal has important influence on the performance of the electronic components. The seed crystal, which serves as a starting point for the Czochralski silicon single crystal, affects the profile of the ingot during pulling of the Czochralski silicon single crystal and also affects the distribution of micro-defects and impurities in the pulled ingot. On the one hand, the use of a seed crystal with a severe misorientation will result in a deviation of the ingot profile from cylindrical, as for the conventional <111> crystal orientation ingot, a very wide flat edge will form. Since the ingot must be finally processed into a cylindrical shape, in order to secure the diameter of the cylindrical ingot after processing, the diameter of the ingot must be properly relaxed during pulling so as not to reach the target diameter after the original ingot is rounded. Therefore, a large deviation of the seed crystal orientation results in a waste of silicon polycrystal raw material, resulting in an increase in the cost of an ingot manufacturer. On the other hand, if the deviation of the seed crystal is too large, the deviation degree of the solid-liquid interface from the target crystal orientation in the ingot growing process is influenced. Because crystal ingots rotate in the conventional Czochralski silicon single crystal growing process, the relation between a solid-liquid interface and a target crystal orientation is periodically changed, and therefore, the distribution of micro defects and impurities is periodically changed. For device processes with smaller and smaller feature line widths, it becomes more and more important to reduce the non-uniformity of the silicon single crystal, and therefore it is necessary to solve the problem of micro-defects and non-uniformity of impurities in the ingot starting from the source of the seed crystal.
Disclosure of Invention
The invention aims to provide a method for manufacturing a silicon seed crystal with high orientation precision, which is used for manufacturing the silicon seed crystal with high orientation precision.
The method comprises the following specific steps:
step (1), a section of cylindrical silicon single crystal ingot with the required orientation is intercepted, after rounding and end face mechanical polishing, two diameters AB and CD which are vertical to each other are marked on one end face of a cylinder, and then four straight lines AA ', BB', CC 'and DD' are marked on the side wall of the cylinder along the axial direction by taking A, B, C, D as a starting point and taking the other end face as an end point;
cutting a disc-shaped silicon wafer with the thickness of 0.5-2 mm at one end of the marked diameter of the silicon single crystal ingot by using a cutting machine;
orienting the cut silicon wafer by using an XRD diffractometer, and determining the deviation degree and the deviation direction of the silicon wafer from a specific crystal orientation; the method comprises the following specific steps:
(3-1) enabling the AB line of the end face of the silicon wafer to be parallel to the X-ray-detector plane of the XRD diffractometer, scanning in a theta-2 theta mode, and determining the diffraction angle 2 theta corresponding to the specific crystal direction in the AB direction1；
(3-2) rotating the end face of the silicon wafer by 180 degrees, scanning by theta-2 theta, and determining the diffraction angle 2 theta corresponding to the specific crystal direction in the BA direction2(ii) a To obtain a deviation angle in the AB direction
Figure BDA0002261248760000021
(3-3) enabling the CD line of the end face of the silicon wafer to be parallel to the X ray-detector plane of the XRD diffractometer, scanning by theta-2 theta, and determining the diffraction angle 2 theta corresponding to the specific crystal direction in the CD direction3；
(3-4) rotating the end face of the silicon wafer by 180 degrees again, scanning by theta-2 theta, and determining the diffraction angle 2 theta corresponding to the specific crystal direction in the DC direction4(ii) a To obtain a deviation angle in the CD direction
Figure BDA0002261248760000022
(3-5) calculating the total deviation angle γ of the specific crystal orientation:
Figure BDA0002261248760000023
(3-6) assuming that the diffraction angle of the specific crystal orientation of the silicon wafer is 2 theta0Setting the diffraction angle 2 theta of the XRD diffractometer to 2 theta0At +2 gamma, changing the azimuth angle of the silicon wafer, and finding out the azimuth angle corresponding to the maximum value of the diffraction intensity of the specific crystal orientation, wherein the direction is the direction deviating from the maximum;
marking a diameter EF parallel to an X-ray-detector plane of the XRD diffractometer on the end face of the silicon wafer, marking E, F at the end point of the diameter and marking the direction of an arrow;
restoring the silicon wafer marked with the diameter EF to the original position of the silicon single crystal ingot, and marking a straight line EE' on the side wall of the cylinder along the axial direction by taking the E as a starting point and the other end face of the cylinder as an end point;
step (5), placing the silicon single crystal ingot on a base;
the base is a step cylinder and comprises a cylindrical base at the lower part and a cylindrical positioning block at the upper part, the base and the positioning block are arranged concentrically, and the diameter D of the end surface of the base is2Is greater than the diameter D of the end face of the positioning block1Diameter D of end face of positioning block1Is larger than the diameter D of the end face of the silicon single crystal ingot;
step (6), a metal sheet is padded on the lower end face of the E 'point of the silicon single crystal ingot, and the E' point of the silicon single crystal ingot is lifted by h, wherein h is D sin gamma, namely the crystal direction deviation of the silicon single crystal ingot is corrected;
step (7), sleeving the sleeve on the base, injecting epoxy resin into the sleeve, and curing;
the sleeve is a cylinder with two open ends, D1＜D3＜D2，D3Is the inner diameter of the sleeve;
and (8) placing the solidified silicon single crystal ingot, the base and the sleeve into a drilling machine, selecting a hollow diamond bit according to the diameter of the required silicon seed crystal, and drilling a cylindrical seed crystal to obtain the silicon seed crystal with small crystal direction deviation.
The method has clear principle and simple method, and the manufactured silicon seed crystal has high orientation precision, and the deviation can be less than 0.05 ℃. The shape of the czochralski silicon single crystal pulled by the high-precision seed crystal is close to a circle, and no obvious flat edge structure exists.
Drawings
FIG. 1 is a schematic drawing showing a silicon single crystal ingot in accordance with the method of the present invention;
FIG. 2 is a schematic illustration of silicon wafer labeling in the method of the present invention;
FIG. 3 is a schematic diagram showing the relationship between the surface normal of the silicon wafer and the specific crystal orientation in the method of the present invention;
FIG. 4 is a schematic view of a silicon single crystal ingot marking after silicon wafer and ingot recovery in the process of the present invention;
FIG. 5 is a schematic view of a base structure in the method of the present invention;
FIG. 6 is a schematic view showing correction of the deviation of the crystal orientation of a silicon single crystal ingot in the method of the present invention;
FIG. 7 is a schematic view of the epoxy resin injection in the method of the present invention.
Detailed Description
A method for manufacturing a silicon seed crystal with high orientation precision comprises the following specific steps:
step (1) as shown in figure 1, a section of cylindrical silicon single crystal ingot with the required orientation is cut, and the length is determined according to the requirement. The cut cylinder is rounded and the end surface is mechanically polished. Two diameters AB and CD perpendicular to each other are marked on one end face of the cylinder, and then four straight lines AA ', BB', CC 'and DD' are marked on the side wall of the cylinder along the axial direction by taking A, B, C, D as a starting point and taking the other end face as an end point.
And (2) cutting a round silicon wafer with the thickness of 0.5-2 mm at one end of the marked diameter of the silicon single crystal ingot by using a cutting machine, wherein the thickness of the cut silicon wafer is 1 mm.
Step (3), orienting the cut silicon wafer by using an XRD diffractometer, and determining the deviation degree and the deviation direction of the silicon wafer and a specific crystal orientation (such as <111>, <100 >); the method comprises the following specific steps:
(3-1) enabling the AB line of the end face of the silicon wafer to be parallel to the X-ray-detector plane of the XRD diffractometer, scanning in a theta-2 theta mode, and determining the diffraction angle 2 theta corresponding to the specific crystal direction in the AB direction1；
(3-2) rotating the end face of the silicon wafer by 180 degrees, scanning by theta-2 theta, and determining the diffraction angle 2 theta corresponding to the specific crystal direction in the BA direction2(ii) a The deviation angle in the AB direction can be obtained
Figure BDA0002261248760000031
(3-3) enabling the CD line of the end face of the silicon wafer to be parallel to the X ray-detector plane of the XRD diffractometer, scanning by theta-2 theta, and determining the diffraction angle 2 theta corresponding to the specific crystal direction in the CD direction3；
(3-4) rotating the end face of the silicon wafer by 180 degrees again, scanning by theta-2 theta, and determining the diffraction angle 2 theta corresponding to the specific crystal direction in the DC direction4(ii) a The off angle in the CD direction can be obtained
Figure BDA0002261248760000032
(3-5) determining the total deviation angle γ of the specific crystal orientation:
according to SEMI standard MF026-00-0305, the relationship between γ and α and β is cos γ ═ cos α. cos β, and thus γ ═ cos-1(cos α. cos β) when α and β are small, it can be simplified to γ2≈α2+β2I.e. by
Figure BDA0002261248760000041
Get
Figure BDA0002261248760000042
(3-6) assuming a silicon wafer specific crystal orientation (e.g., Si wafer<100>,<111>,<110>Etc.) at a diffraction angle of 2 theta0Setting the diffraction angle 2 theta of the XRD diffractometer to 2 theta0At +2 gamma, changing the azimuth angle of the silicon wafer, and finding out the azimuth angle corresponding to the maximum value of the diffraction intensity of the specific crystal orientation, wherein the direction is the direction deviating from the maximum; the end face of the silicon wafer is marked with a diameter EF parallel to the X-ray detector plane of the XRD diffractometer, the end point of the diameter is marked with E, F, and the direction of the arrow is marked (as shown in figure 2), and the deviation angle between the specific crystal orientation and the normal line of the surface of the silicon wafer is shown in figure 3, wherein the OM orientation is the specific crystal orientation, and the ON orientation is the normal line of the surface of the silicon wafer.
And (4) restoring the silicon wafer marked with the diameter EF to the original position of the silicon single crystal ingot, and then marking a straight line EE' on the side wall of the cylinder along the axial direction by taking the E as a starting point and the other end face of the cylinder as an end point (as shown in figure 4).
And (5) placing the silicon single crystal ingot on the base 1. As shown in FIG. 5, the base 1 is a stepped cylinder, and comprises a lower cylindrical base and an upper cylindrical positioning block, the base and the positioning block are concentrically arranged, and the diameter D of the end surface of the base is2Is greater than the diameter D of the end face of the positioning block1Diameter D of end face of positioning block1Is larger than the diameter D of the end face of the silicon single crystal ingot.
And (6) as shown in fig. 6, a metal sheet 2 is padded on the lower end face of the point E 'of the silicon single crystal ingot, and the point E' of the silicon single crystal ingot is raised by h, h is Dsin gamma, namely the crystal orientation deviation of the silicon single crystal ingot is corrected.
And (7) sleeving the sleeve 3 on the base, injecting epoxy resin 4 into the sleeve, and curing. As shown in FIG. 7, the sleeve 3 is a cylindrical tube with both ends open, D1＜D3＜D2，D3Is the inner diameter of the sleeve.
And (8) placing the solidified silicon single crystal ingot, the base and the sleeve into a drilling machine, selecting a hollow diamond bit according to the diameter of the required silicon seed crystal, and drilling a cylindrical seed crystal to obtain the silicon seed crystal with small crystal direction deviation.
And (3) error analysis: for currently commercially available XRD, the angle error of the diffraction angles is typically on the order of 0.02 degrees. For the metal sheet in the step (6), the machining precision is less than 0.01mm, and the diameter of the silicon wafer for the integrated circuit is generally more than 100mm at present, so the angle error caused by the machining precision is in the order of 0.005 degree. The deviation of orientation of the seed crystal obtained with this method is of the order of 0.02 degrees if other errors are not taken into account. If angular positioning is performed with high resolution XRD, the angular error of the diffraction angle can be reduced to 0.0001 degree, and the orientation error can be reduced to the order of 0.005 degree.
The above detailed description is not intended to limit the scope of the invention, which is defined solely by the appended claims, but rather by the appended claims, and all other embodiments that may be made by those skilled in the art without undue experimentation.

Claims (1)

1. A method for manufacturing a silicon seed crystal with high orientation precision is characterized by comprising the following specific steps:
step (1), a section of cylindrical silicon single crystal ingot with the required orientation is intercepted, after rounding and end face mechanical polishing, two diameters AB and CD which are vertical to each other are marked on one end face of a cylinder, and then four straight lines AA ', BB', CC 'and DD' are marked on the side wall of the cylinder along the axial direction by taking A, B, C, D as a starting point and taking the other end face as an end point;
cutting a disc-shaped silicon wafer with the thickness of 0.5-2 mm at one end of the marked diameter of the silicon single crystal ingot by using a cutting machine;
orienting the cut silicon wafer by using an XRD diffractometer, and determining the deviation degree and the deviation direction of the silicon wafer from a specific crystal orientation; the method comprises the following specific steps:
(3-1) enabling the AB line of the end face of the silicon wafer to be parallel to the X-ray-detector plane of the XRD diffractometer, scanning in a theta-2 theta mode, and determining the diffraction angle 2 theta corresponding to the specific crystal direction in the AB direction1；
(3-2) rotating the end face of the silicon wafer by 180 degrees, scanning by theta-2 theta, and determining the diffraction angle 2 theta corresponding to the specific crystal direction in the BA direction2(ii) a To obtain a deviation angle in the AB direction
Figure FDA0002261248750000011
(3-3) enabling the CD line of the end face of the silicon wafer to be parallel to the X ray-detector plane of the XRD diffractometer, scanning by theta-2 theta, and determining the diffraction angle 2 theta corresponding to the specific crystal direction in the CD direction3；
(3-4) rotating the end face of the silicon wafer by 180 degrees again, scanning by theta-2 theta, and determining the diffraction angle 2 theta corresponding to the specific crystal direction in the DC direction4(ii) a To obtain a deviation angle in the CD direction
Figure FDA0002261248750000012
(3-5) calculating the total deviation angle γ of the specific crystal orientation:
Figure FDA0002261248750000013
(3-6) assuming that the diffraction angle of the specific crystal orientation of the silicon wafer is 2 theta0Setting the diffraction angle 2 theta of the XRD diffractometer to 2 theta0At +2 gamma, changing the azimuth angle of the silicon wafer, and finding out the azimuth angle corresponding to the maximum value of the diffraction intensity of the specific crystal orientation, wherein the direction is the direction deviating from the maximum;
marking a diameter EF parallel to an X-ray-detector plane of the XRD diffractometer on the end face of the silicon wafer, marking E, F at the end point of the diameter and marking the direction of an arrow;
restoring the silicon wafer marked with the diameter EF to the original position of the silicon single crystal ingot, and marking a straight line EE' on the side wall of the cylinder along the axial direction by taking the E as a starting point and the other end face of the cylinder as an end point;
step (5), placing the silicon single crystal ingot on a base;
the base is a step cylinder and comprises a cylindrical base at the lower part and a cylindrical positioning block at the upper part, the base and the positioning block are arranged concentrically, and the diameter D of the end surface of the base is2Is greater than the diameter D of the end face of the positioning block1Diameter D of end face of positioning block1Is larger than the diameter D of the end face of the silicon single crystal ingot;
step (6), a metal sheet is padded on the lower end face of the E 'point of the silicon single crystal ingot, and the E' point of the silicon single crystal ingot is lifted by h, wherein h is Dsin gamma, namely the crystal direction deviation of the silicon single crystal ingot is corrected;
step (7), sleeving the sleeve on the base, injecting epoxy resin 4 into the sleeve, and curing;
the sleeve is a cylinder with two open ends, D1＜D3＜D2，D3Is the inner diameter of the sleeve;
and (8) placing the solidified silicon single crystal ingot, the base and the sleeve into a drilling machine, selecting a hollow diamond bit according to the diameter of the required silicon seed crystal, and drilling a cylindrical seed crystal to obtain the silicon seed crystal with small crystal direction deviation.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006329821A (en) * 2005-05-26 2006-12-07 Sony Corp X-ray diffraction apparatus and measuring method of x-ray diffraction pattern
CN103257150A (en) * 2012-08-31 2013-08-21 云南北方驰宏光电有限公司 Crystal direction finder for directly measuring deflecting angle in crystal orientation and measurement method thereof
CN105479280A (en) * 2015-12-30 2016-04-13 中国科学院上海硅酸盐研究所 Device and method for silicon carbide crystal deflection shaping
JP2016211916A (en) * 2015-05-01 2016-12-15 信越半導体株式会社 Apparatus and method for measuring x ray crystal orientation
CN206328494U (en) * 2016-10-08 2017-07-14 中国科学院上海硅酸盐研究所 High-quality growing silicon carbice crystals oblique seed crystal support and grower

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006329821A (en) * 2005-05-26 2006-12-07 Sony Corp X-ray diffraction apparatus and measuring method of x-ray diffraction pattern
CN103257150A (en) * 2012-08-31 2013-08-21 云南北方驰宏光电有限公司 Crystal direction finder for directly measuring deflecting angle in crystal orientation and measurement method thereof
JP2016211916A (en) * 2015-05-01 2016-12-15 信越半導体株式会社 Apparatus and method for measuring x ray crystal orientation
CN105479280A (en) * 2015-12-30 2016-04-13 中国科学院上海硅酸盐研究所 Device and method for silicon carbide crystal deflection shaping
CN206328494U (en) * 2016-10-08 2017-07-14 中国科学院上海硅酸盐研究所 High-quality growing silicon carbice crystals oblique seed crystal support and grower

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
孙以材编著: "《半导体测试技术》", 31 October 1984, 冶金工业出版社 *

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