CN1109127C - 非平衡平面磁控溅射阴极及其镀膜装置 - Google Patents
非平衡平面磁控溅射阴极及其镀膜装置 Download PDFInfo
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 72
- 238000004544 sputter deposition Methods 0.000 title claims description 27
- 238000007747 plating Methods 0.000 title abstract description 4
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 8
- 238000001816 cooling Methods 0.000 claims abstract description 5
- 230000002093 peripheral effect Effects 0.000 claims description 15
- 239000007888 film coating Substances 0.000 claims description 14
- 238000009501 film coating Methods 0.000 claims description 14
- 238000001755 magnetron sputter deposition Methods 0.000 abstract 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 12
- 229910052742 iron Inorganic materials 0.000 description 6
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- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- 238000010849 ion bombardment Methods 0.000 description 1
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
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- H01J37/3408—Planar magnetron sputtering
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Abstract
本发明设计一种非平衡平面磁控溅射阴极,包括靶材、非铁磁体背板、永磁体、极靴。两块永磁体的N-S轴线平行于靶面放置于靶材与非铁磁性背板之间,两侧永磁体的N极相对,永磁体与靶材之间有水冷通道。镀膜装置的真空室四周均匀分布有磁控溅射阴极,真空室中心设置有电磁铁。本发明使全封闭磁力网笼挤满整个真空室,在整个镀膜空间实现对电子的控制,使电子难以逃逸到真空室壁(阳极),以提高整个真空室的气体离化率。
Description
本发明涉及一种非平衡平面磁控溅射阴极及其镀膜装置,属真空镀膜技术领域。
目前工业应用的非平衡平面磁控溅射阴极,如荷兰豪士公司(Hauzer TechnoCoating)在HTC型镀膜装置中采用的是电磁铁以增强普通磁控溅射阴极的外围磁极,所构成的非平衡磁控溅射阴极,如图1所示。图1中,1是电磁铁,2是靶材,3是永磁体,4是真空室。其特点是:采用永磁体产生磁场,永磁体的N-S轴线垂直于靶面,外围永磁体与心部永磁体的极性相反;采用纯铁(或低碳钢)背板连接外围永磁体和心部永磁体。
目前已有装备非平衡平面磁控溅射阴极的真空镀膜装置投放市场。例如荷兰豪士公司生产的HTC1000-4 ABS镀膜装置,该装置是在真空室四周布置了4个如图1所示的非平衡磁控溅射阴极。见图2,图2中,1是电磁铁,2是靶材,3是永磁体,5是跑道磁力线,6是发散磁力线,7是行星室工件架。彼此相邻的两个非平衡磁控溅射阴极,其磁场极性是相反的。于是,各自发散的磁力线彼此相连,在真空室壁内侧构成磁力线网来约束电子。约束电子的磁力线网集中在真空室壁附近,使这一地区的离化率提高,但对真空室内部镀膜速率较高的区域,也就是对于更需要提高离化率的区域反而影响不大。此外,约束电子的磁力线网在真空室的上、下端并未封闭,电子容易由此逃逸。
本发明的目的是设计一种非平衡平面磁控溅射阴极及其镀膜装置,使全封闭磁力线网笼挤满整个真空室,在整个真空室的镀膜空间实现对电子的控制,使电子难以逃逸到真空室壁(阳极),以提高整个真实室的气体离化率。
本发明设计的非平衡平面磁控溅射阴极,包括靶材、非铁磁体背板、两块永磁体、心部极靴和外围极靴。两块永磁体的N-S轴线平行于靶面放置于靶材与非铁磁体背板之间,左右两侧的永磁体的相同磁性的磁极相对,心部极靴放置于两侧永磁体之间,永磁体的外侧为外围极靴,永磁体与靶材之间有水冷通道。
本发明利用上述非平衡平面磁控溅射阴极设计了镀膜装置,该装置的真空室四周均匀分布有如上所述的阴极,真空室中心设置有电磁铁,电磁铁的磁极与磁控溅射阴极按相反的极性相对,被镀膜的工件置于阴极与电磁铁之间。
本发明设计的非平衡平面磁控溅射阴极,其心部极靴发出的磁力线一部分进入靶面,为跑道磁力线,构成跑道磁场;另一部分为发散磁力线,从而实现非平衡磁控溅射阴极的磁力线分布。
将本发明设计的阴极应用于镀膜装置,在真空室中心装置电磁铁,其优点在于进一步使非平衡磁控溅射阴极的发射磁力线延伸到真空室的中心部位,从而使整个真空室的工件都能浸没在等离子体中接受离子轰击。
上述中心电磁铁处于悬浮电位或加上低于溅射阈值的负偏压以反射沿发射磁力线螺旋前进而到达中心电磁铁的电子。
本发明设计的镀膜装置,使全封闭磁力线笼子挤满整个真空室,在整个镀膜空间实现对电子的控制,使电子难以逃逸到真空室壁(阳极),以提高整个真实室的气体离化率。
附图说明:
图1是已有技术的豪士非平衡平面磁控溅射阴极的结构示意图。
图2是已有技术的豪士镀膜装置示意图。
图3是本发明设计的非平衡平面磁控溅射阴极的结构示意图。
图4是利用本发明阴极所设计的镀膜装置的示意图。
图5是外围磁力线网笼的顶端封闭情况示意图。
下面结合附图详细介绍本发明的内容。
图3中,11是靶材,12是外围极靴,其材料为纯铁,13是永磁体,14是非铁磁体背板,其材料为聚四氟乙烯,15是水冷通道,16是心部极靴,其材料为纯铁,17是强等离子区域,18是发散磁力线,19是跑道磁力线。
图4中,21是真空室,22是电磁铁心部极靴,其材料为纯铁,23是电磁铁线圈,24是电磁铁外围极靴,其材料为纯铁,25是电磁铁背板,其材料为纯铁,26是外围磁力线(构成磁力线网笼),27是心部磁力线(构成心部磁力线网笼),28是跑道磁力线,29是本发明设计的非平衡平面磁控溅射阴极。
图5中,21是真空室,26是外围磁力线网笼,28是跑道磁力线,29是本发明设计的非平衡平面磁控溅射阴极,30是电磁铁。
如图3所示,本发明设计的非平衡平面磁控溅射阴极,包括靶材11、非铁磁体背板14、永磁体13、极靴12和16。永磁体的N-S轴线平行于靶面放置于靶材11与非铁磁体背板14之间,两侧永磁体的N极相对,心部极靴16放置于两侧永磁体之间,永磁体的外侧均为外围极靴12,永磁体与靶材之间有水冷通道15。
如图4所示,本发明设计的非平衡平面磁控溅射阴极的镀膜装置,该装置的真空室四周均匀分布有四具非平衡平面磁控溅射阴极,真空室中心设置有电磁铁,电磁铁的N,S磁极与磁控溅射阴极的N,S磁极按相反的极性相对。
本发明中中心磁体采用电磁体是为了便于通过调节其磁场强度以满足各种镀膜工艺所要求的不同程度的离化率。在工艺一定的条件下,也可以简单采用永磁体。图4所示的整个布置可划分出四个相同的单元,每个单元包含一个非平衡平面磁控溅射阴极和一个电磁铁。电磁铁的磁场与本设计的非平衡平面磁控溅射阴极相似,即包括跑道磁场和心部发散磁场两部分。每个非平衡平面磁控溅射阴极的跑道磁场正对一个电磁铁的跑道磁场,但极性相反。每个单元中,非平衡平面磁控溅射阴极和电磁体这两者的发散磁场共同作用,构成一个外围磁力线网笼和一个心部磁力线网笼,并且都是顶部和底部全部封闭的。图5表示外围磁力线网笼的顶部(或底部)的封闭情况,这样可以避免电子从真空室上端和下端逃逸到真空室壁(即阳极)。如图所示,整个镀膜装置共有8个全封闭磁力线笼子挤满整个真空室,在整个镀膜空间实现对电子的控制,使电子难以逃逸到真空室壁(阳极),以提高整个真实室的气体离化率。
每个单元独立具有非平衡磁控溅射功能,在镀膜装置中可以单独安装,也可以多个任意组装,如图4为4个单元组装的情况。
Claims (2)
1、一种非平衡平面磁控溅射阴极,其特征在于,该阴极包括靶材、非铁磁体背板、两块永磁体、心部极靴和外围极靴;两块永磁体的N-S轴线平行于靶面放置于靶材与非铁磁性背板之间,两侧永磁体的N极相对,心部极靴放置于永磁体之间,永磁体的外侧均为S外围极靴,永磁体与靶材之间有水冷通道。
2、一种装有如权利要求1所述的非平衡平面磁控溅射阴极的镀膜装置,其特征在于该装置的真空室四周分布有非平衡平面磁控溅射阴极,真空室中心设置有电磁铁,电磁铁的N,S磁极与非平衡平面磁控溅射阴极的N,S磁极按相反的极性相对。
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CN98120365A CN1109127C (zh) | 1998-10-09 | 1998-10-09 | 非平衡平面磁控溅射阴极及其镀膜装置 |
GB9903261A GB2342361B (en) | 1998-10-09 | 1999-02-12 | Planar unbalanced magnetron sputtering cathode and coating system with the same |
IT1999PN000060A IT1311701B1 (it) | 1998-10-09 | 1999-07-16 | Catodo a polverizzazione ionica per magnetron squilibratoplanare e sistema di rivestimento con lo stesso |
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KR100846484B1 (ko) * | 2002-03-14 | 2008-07-17 | 삼성전자주식회사 | Rmim 전극 및 그 제조방법 및 이를 채용하는 스퍼터링장치 |
DE102006020004B4 (de) * | 2006-04-26 | 2011-06-01 | Systec System- Und Anlagentechnik Gmbh & Co.Kg | Vorrichtung und Verfahren zur homogenen PVD-Beschichtung |
JP4526582B2 (ja) * | 2007-11-30 | 2010-08-18 | パナソニック株式会社 | スパッタリング装置およびスパッタリング方法 |
CN201614406U (zh) * | 2008-08-27 | 2010-10-27 | 梯尔涂层有限公司 | 沉积材料形成镀层的设备 |
JP2010144199A (ja) * | 2008-12-17 | 2010-07-01 | Canon Anelva Corp | 真空容器、真空容器を備える真空処理装置及び真空容器の製造方法 |
US20120125766A1 (en) * | 2010-11-22 | 2012-05-24 | Zhurin Viacheslav V | Magnetron with non-equipotential cathode |
CN102586750A (zh) * | 2012-03-14 | 2012-07-18 | 无锡康力电子有限公司 | 平面移动靶机构 |
CN105200381B (zh) * | 2015-10-27 | 2018-06-12 | 中国科学院兰州化学物理研究所 | 阳极场辅磁控溅射镀膜装置 |
CN106435500B (zh) * | 2016-09-30 | 2018-07-27 | 西南交通大学 | 一种用于平面圆形磁控溅射阴极靶的磁场源 |
CN109065429B (zh) * | 2018-08-10 | 2020-05-05 | 成都极星等离子科技有限公司 | 一种可降低电子逃逸率的离子源 |
CN109706428A (zh) * | 2019-02-25 | 2019-05-03 | 常州星宇车灯股份有限公司 | 一种溅射靶装置 |
CN114574830B (zh) * | 2022-03-11 | 2024-03-26 | 陕西理工大学 | 用于磁控溅射靶阴极的磁铁布置结构 |
CN114351104B (zh) * | 2022-03-21 | 2022-06-07 | 山西金山磁材有限公司 | 一种磁控溅射平面靶磁通装置 |
CN115011941A (zh) * | 2022-06-06 | 2022-09-06 | 中国科学院电工研究所 | 一种基于变磁场磁控溅射镀膜装置的永磁体选区镀膜方法 |
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CN1130215A (zh) * | 1994-11-30 | 1996-09-04 | 美国电报电话公司 | 平面磁控溅镀的方法和设备 |
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ITPN990060A1 (it) | 2001-01-16 |
GB2342361A (en) | 2000-04-12 |
GB9903261D0 (en) | 1999-04-07 |
GB2342361B (en) | 2003-06-04 |
CN1215094A (zh) | 1999-04-28 |
ITPN990060A0 (it) | 1999-07-16 |
IT1311701B1 (it) | 2002-03-19 |
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