IT1311701B1 - Catodo a polverizzazione ionica per magnetron squilibratoplanare e sistema di rivestimento con lo stesso - Google Patents

Catodo a polverizzazione ionica per magnetron squilibratoplanare e sistema di rivestimento con lo stesso

Info

Publication number
IT1311701B1
IT1311701B1 IT1999PN000060A ITPN990060A IT1311701B1 IT 1311701 B1 IT1311701 B1 IT 1311701B1 IT 1999PN000060 A IT1999PN000060 A IT 1999PN000060A IT PN990060 A ITPN990060 A IT PN990060A IT 1311701 B1 IT1311701 B1 IT 1311701B1
Authority
IT
Italy
Prior art keywords
unbalked
pulverization
magnetron
ionic
cathode
Prior art date
Application number
IT1999PN000060A
Other languages
English (en)
Italian (it)
Inventor
Yudian Fan
Baihai Wang
Anthony C H Wong
George Bonatsos
Original Assignee
Zhentao Int Titanium Coating
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhentao Int Titanium Coating filed Critical Zhentao Int Titanium Coating
Publication of ITPN990060A0 publication Critical patent/ITPN990060A0/it
Publication of ITPN990060A1 publication Critical patent/ITPN990060A1/it
Application granted granted Critical
Publication of IT1311701B1 publication Critical patent/IT1311701B1/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Disintegrating Or Milling (AREA)
IT1999PN000060A 1998-10-09 1999-07-16 Catodo a polverizzazione ionica per magnetron squilibratoplanare e sistema di rivestimento con lo stesso IT1311701B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN98120365A CN1109127C (zh) 1998-10-09 1998-10-09 非平衡平面磁控溅射阴极及其镀膜装置

Publications (3)

Publication Number Publication Date
ITPN990060A0 ITPN990060A0 (it) 1999-07-16
ITPN990060A1 ITPN990060A1 (it) 2001-01-16
IT1311701B1 true IT1311701B1 (it) 2002-03-19

Family

ID=5226709

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999PN000060A IT1311701B1 (it) 1998-10-09 1999-07-16 Catodo a polverizzazione ionica per magnetron squilibratoplanare e sistema di rivestimento con lo stesso

Country Status (3)

Country Link
CN (1) CN1109127C (zh)
GB (1) GB2342361B (zh)
IT (1) IT1311701B1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100846484B1 (ko) * 2002-03-14 2008-07-17 삼성전자주식회사 Ｒｍｉｍ 전극 및 그 제조방법 및 이를 채용하는 스퍼터링장치
DE102006020004B4 (de) * 2006-04-26 2011-06-01 Systec System- Und Anlagentechnik Gmbh & Co.Kg Vorrichtung und Verfahren zur homogenen PVD-Beschichtung
JP4526582B2 (ja) * 2007-11-30 2010-08-18 パナソニック株式会社 スパッタリング装置およびスパッタリング方法
CN201614406U (zh) * 2008-08-27 2010-10-27 梯尔涂层有限公司 沉积材料形成镀层的设备
JP2010144199A (ja) * 2008-12-17 2010-07-01 Canon Anelva Corp 真空容器、真空容器を備える真空処理装置及び真空容器の製造方法
US20120125766A1 (en) * 2010-11-22 2012-05-24 Zhurin Viacheslav V Magnetron with non-equipotential cathode
CN102586750A (zh) * 2012-03-14 2012-07-18 无锡康力电子有限公司 平面移动靶机构
CN105200381B (zh) * 2015-10-27 2018-06-12 中国科学院兰州化学物理研究所 阳极场辅磁控溅射镀膜装置
CN106435500B (zh) * 2016-09-30 2018-07-27 西南交通大学 一种用于平面圆形磁控溅射阴极靶的磁场源
CN109065429B (zh) * 2018-08-10 2020-05-05 成都极星等离子科技有限公司 一种可降低电子逃逸率的离子源
CN109706428A (zh) * 2019-02-25 2019-05-03 常州星宇车灯股份有限公司 一种溅射靶装置
CN114574830B (zh) * 2022-03-11 2024-03-26 陕西理工大学 用于磁控溅射靶阴极的磁铁布置结构
CN114351104B (zh) * 2022-03-21 2022-06-07 山西金山磁材有限公司 一种磁控溅射平面靶磁通装置
CN115011941B (zh) * 2022-06-06 2024-08-23 中国科学院电工研究所 一种基于变磁场磁控溅射镀膜装置的永磁体选区镀膜方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH648690A5 (de) * 1980-10-14 1985-03-29 Balzers Hochvakuum Kathodenanordnung zur abstaeubung von material von einem target in einer kathodenzerstaeubungsanlage.
US4517070A (en) * 1984-06-28 1985-05-14 General Motors Corporation Magnetron sputtering cathode assembly and magnet assembly therefor
KR950000011B1 (ko) * 1990-02-28 1995-01-07 니찌덴 아네루바 가부시끼가이샤 마그네트론 스패터링장치 및 박막형성방법
US5441614A (en) * 1994-11-30 1995-08-15 At&T Corp. Method and apparatus for planar magnetron sputtering
CN2232044Y (zh) * 1995-01-24 1996-07-31 郑世民 大回路闭合溅射轨迹柱状磁控靶
CN1157335A (zh) * 1996-02-13 1997-08-20 王福贞 新型永磁控平面阴极电弧源
US5736019A (en) * 1996-03-07 1998-04-07 Bernick; Mark A. Sputtering cathode
CN2241698Y (zh) * 1996-03-08 1996-12-04 甘国工 平面磁控溅射源
US6081725A (en) * 1996-10-30 2000-06-27 Nec Corporation Portable telephone system and control method therefor

Also Published As

Publication number Publication date
ITPN990060A0 (it) 1999-07-16
CN1109127C (zh) 2003-05-21
GB2342361A (en) 2000-04-12
GB9903261D0 (en) 1999-04-07
CN1215094A (zh) 1999-04-28
GB2342361B (en) 2003-06-04
ITPN990060A1 (it) 2001-01-16

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