CN110911261B - 衬底处理装置、半导体器件的制造方法及记录介质 - Google Patents

衬底处理装置、半导体器件的制造方法及记录介质 Download PDF

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CN110911261B
CN110911261B CN201910051465.2A CN201910051465A CN110911261B CN 110911261 B CN110911261 B CN 110911261B CN 201910051465 A CN201910051465 A CN 201910051465A CN 110911261 B CN110911261 B CN 110911261B
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gas supply
valve
substrate
reaction gas
supplied
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CN110911261A (zh
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广地志有
八幡橘
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Kokusai Electric Corp
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Kokusai Electric Corp
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

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