CN110911261A - 衬底处理装置、半导体器件的制造方法及记录介质 - Google Patents

衬底处理装置、半导体器件的制造方法及记录介质 Download PDF

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CN110911261A
CN110911261A CN201910051465.2A CN201910051465A CN110911261A CN 110911261 A CN110911261 A CN 110911261A CN 201910051465 A CN201910051465 A CN 201910051465A CN 110911261 A CN110911261 A CN 110911261A
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gas supply
valve
substrate
reaction gas
supplied
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CN110911261B (zh
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广地志有
八幡橘
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Kokusai Electric Corp
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Kokusai Electric Corp
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Abstract

本发明涉及衬底处理装置、半导体器件的制造方法及记录介质。本发明的目的在于，提供能够在供给等离子体而进行处理的装置中控制在衬底的径向上供给的自由基量的技术。衬底处理装置具有：处理室，其对衬底进行处理；衬底支承部，其在所述处理室中支承衬底；多个反应气体供给孔，其设置于所述处理室的与所述衬底支承部的衬底支承面相对的壁上；多个反应气体供给部，其具有反应气体供给管、和设置于所述反应气体供给管的上游的等离子体生成部，所述反应气体供给管固定于所述处理室、且与所述反应气体供给孔的各自连通；和等离子体控制部，其连接于所述等离子体生成部、对多个所述等离子体生成部各自单独地进行控制。

Description

衬底处理装置、半导体器件的制造方法及记录介质
技术领域
本发明涉及衬底处理装置、半导体器件的制造方法及记录介质。
背景技术
对于制造半导体器件的半导体制造装置而言，要求提高生产率。为了实现该目的，对衬底均匀地进行处理以提高成品率。
发明内容
发明所要解决的课题
作为处理衬底的方法，有使用等离子体的方法。等离子体具有高能量，用于例如与衬底上的膜、前体反应的情况。作为使用等离子体的装置，有专利文献1中记载的装置。
就这些装置而言，由于存在各种制约，因此要求控制在衬底的径向上供给的自由基的量。因此，本发明的目的在于，提供能够在供给等离子体从而进行处理的装置中对在衬底的径向上供给的自由基量进行控制的技术。
专利文献1：日本特开2015-144225
用于解决课题的手段
用于解决上述课题的本发明的方式之一为下述技术，其具有：处理室，其对衬底进行处理；衬底支承部，其在所述处理室中支承衬底；多个反应气体供给孔，其设置于所述处理室的与所述衬底支承部的衬底支承面相对的壁上；多个反应气体供给部，其具有反应气体供给管、和设置于所述反应气体供给管的上游的等离子体生成部，所述反应气体供给管固定于所述处理室、且与所述反应气体供给孔的各自连通；等离子体控制部，其连接于所述等离子体生成部、对多个所述等离子体生成部各自单独地进行控制。
发明效果
根据本发明涉及的技术，可提供能够在供给等离子体从而进行处理的装置中对在衬底的径向上供给的自由基量进行控制的技术。
附图说明
[图1]为对衬底处理装置进行说明的说明图。
[图2]为对第一气体供给部进行说明的说明图。
[图3]为对第二气体供给部进行说明的说明图。
[图4]为对衬底处理装置的控制器进行说明的说明图。
[图5]为对衬底处理流程进行说明的说明图。
附图标记说明
100 衬底
200 衬底处理装置
265 等离子体生成部
具体实施方式
使用图1，针对供给等离子体从而对衬底进行处理的衬底处理装置200的一例进行说明。
(腔室)
衬底处理装置200具有腔室202。腔室202构成为例如横截面为圆形、且扁平的密闭容器。另外，腔室202由例如铝(Al)、不锈钢(SUS)等金属材料构成。在腔室202内形成有处理空间205、和在将衬底100搬送至处理空间205时供衬底100通过的搬送空间206，其中，所述处理空间205对作为衬底的硅晶片等衬底100进行处理。腔室202由上部容器202a和下部容器202b构成。在上部容器202a与下部容器202b之间设置有隔板208。
在下部容器202b的侧面设置有与闸阀149相邻的衬底搬入搬出148，衬底100经由衬底搬入搬出148而在下部容器202b与未图示的真空搬送室之间移动。在下部容器202b的底部设有多个提升销207。此外，使下部容器202b接地。
构成处理空间205的处理室201由例如后述的衬底载置台212和喷头230构成。在处理空间205内设有支承衬底100的衬底支承部210。衬底支承部210主要具有载置衬底100的衬底载置面211、在表面具有衬底载置面211的衬底载置台212、和内置于衬底载置台212的作为加热源的加热器213。
衬底载置台212中，在与提升销207对应的位置分别设有供提升销207贯通的贯通孔214。在加热器213上，连接有对加热器213的温度进行控制的温度控制部220。
衬底载置台212被轴217支承。轴217的支承部将设置于腔室202的底壁的孔贯通，进而经由支承板216而在腔室202的外部与升降旋转部218连接。通过使升降旋转部218转动而使轴217及衬底载置台212升降，能够使载置于衬底载置面211上的衬底100升降。此外，可以使升降旋转部218工作，从而使衬底载置台212旋转。需要说明的是，轴217下端部的周围被波纹管219覆盖。腔室202内被气密地保持。
升降旋转部218主要具有对轴217进行支承的支承轴218a、和使支承轴218a升降或旋转的动作部218b。动作部218b具有例如包含用于实现升降的马达的升降部218c、和用于使支承轴218a旋转的齿轮等旋转机构218d。在上述部件上涂布有润滑脂等以使动作变得平稳。
也可在升降旋转部218上设置指示部218e作为升降旋转部218的一部分，指示部218e用于指示动作部218b升降·旋转。指示部218e与控制器400电连接。指示部218e基于控制器400的指示而控制动作部218b。动作部218如后述那样以使得衬底载置台212移动至晶片搬送位置、晶片处理位置的位置的方式进行控制。
对于衬底载置台212而言，在搬送衬底100时，衬底载置面211下降至与衬底搬入搬出口148相对的位置，在处理衬底100时，如图1中所示，衬底100上升至处理空间205内的处理位置。
在处理空间205的上部(上游侧)设有喷头230。喷头230具有盖231。盖231具有凸缘232，凸缘232被支承于上部容器202a上。此外，盖231具有定位部233。通过将定位部233与上部容器202a嵌合，由此盖231被固定。
喷头230具有缓冲空间234。缓冲空间234是由盖231和定位部232构成的空间。缓冲空间234与处理空间205连通。已供给至缓冲空间234中的气体在缓冲空间234中进行扩散，均匀地供给至处理空间205中。此处，将缓冲空间234和处理空间205作为不同的构成进行说明，但不限于此，也可在处理空间205中包含缓冲空间234。
(供给部)
在盖231上设置有供给原料气体或吹扫气体的第一气体供给孔235、和供给反应气体的第二气体供给孔236。如后文所述，反应气体是与原料气体进行反应的气体。为了能够对衬底100的边缘进行供给，在径向上设置有多个第二气体供给孔236。第二气体供给孔236也被称为反应气体供给孔。
以第一气体供给孔235与作为第一气体供给部240的一部分的公共气体供给管241连通的方式构成。公共气体供给管241固定于顶板231。
以各第二气体供给孔236与作为第二气体供给部260的一部分的反应气体供给管261连通的方式构成。反应气体供给管261固定于顶板231。
图1中记载的“A”与图2中记载的“A”连通。另外，“B”与图3中记载的“B”连通。
至少第二气体供给孔236的中心轴构成为不与衬底100的中心轴成为同轴。通过错开两者的中心轴、且使衬底100旋转，从而能够将等离子体状态的反应气体均匀地供给至衬底100表面。
(第一气体供给部)
接下来，使用图2说明第一气体供给部240的详情。公共气体供给管241与第一气体供给管243、吹扫气体供给管249连接。
从第一气体供给管243主要供给含第一元素的气体，从吹扫气体供给管249供给吹扫气体。
(原料气体供给部242)
在公共气体供给管241上连接有第一气体供给管243。在第一气体供给管243上，自上游方向起依次设有第一气体供给源244、作为流量控制器(流量控制部)的MFC245、及作为开闭阀的阀246。
从第一气体供给管243经由公共气体供给管241将含有第一元素的气体(以下，称为“含第一元素的气体”)经由质量流量控制器245、阀246、公共气体供给管241而供给至喷头230。
含第一元素的气体是原料气体、即处理气体之一。此处，第一元素为例如硅(Si)。即，含第一元素的气体为例如含硅气体。具体而言，作为含硅气体，可使用二氯硅烷(SiH2Cl2，也称为DCS)气体。
含第一元素的气体在常温常压下为液态的情况下，可在第一气体供给源244与MFC245之间设置未图示的气化器。此处，以气体形式进行说明。
主要由第一气体供给管243、MFC245、和阀246构成含第一元素气体供给系统242(也称为含硅气体供给系统)。
此外，也可考虑将含第一气体供给源244包括在含第一元素气体供给系统242中。
(吹扫气体供给部)
在公共气体供给管241和第一气体供给管243的合流部247，连接有作为吹扫气体供给部248的一部分的吹扫气体供给管249的下游端。在吹扫气体供给管249上，自上游方向起依次设有吹扫气体供给源250、流量控制器(流量控制部)MFC251、及作为开闭阀的阀252。
吹扫气体为在后述吹扫工序中吹扫处理空间205的气氛的气体。可使用例如氮气。
吹扫气体供给部248主要由吹扫气体供给管249、MFC251、阀252构成。
此外，也可考虑将吹扫气体供给源250包括在吹扫气体供给部248中。
(第二气体供给部)
接下来，使用图3对第二气体供给部260进行说明。在各反应气体供给管261上，自上游方向起依次设置有反应气体供给源262、作为流量控制器(流量控制部)的MFC263、作为等离子体生成部的远程等离子体单元(RPU)265、阀266。
并且，从反应气体供给管261经由MFC263、RPU265而向喷头230内供给反应气体。利用RPU265使反应气体成为等离子体状态。利用等离子体控制部264控制RPU265。
可各自单独地对各RPU265进行控制。作为控制方法，可以构成为例如设置与一个RPU对应的一个等离子体控制部264，对各等离子体控制部所对应的RPU265进行控制。另外，也可将一个等离子体控制部264与多个RPU265连接，等离子体控制部264各自单独地控制各RPU265。
作为RPU265的控制，可以控制例如对RPU265供给的功率。通过控制功率，可调节生成的自由基的量。例如，供给高功率时则生成大量的自由基，供给低功率时则生成少量的自由基。
反应气体为处理气体之一，且为例如含氮气体。作为含氮气体，可使用例如氨气(NH3)。
在比阀266更靠下游侧的合流部267，连接有非活性气体供给管268的下游端。在非活性气体供给管268上，自上游方向起依次设有非活性气体供给源269、作为流量控制器(流量控制部)的MFC270、及作为开闭阀的阀271。并且，从非活性气体供给管268将非活性气体经由MFC270、阀271、反应气体供给管261而供给至喷头230内。非活性气体为例如氮气(N2)。
本实施方式中，由于不存在专利文献1中记载的分散板，因此，可以以不在喷头230内失活的方式供给至衬底100上。
从非活性气体供给管268供给的非活性气体具有气幕的功能，所述气幕的功能为使原料气体、吹扫气体不会侵入反应气体供给管261的功能。
在RPU265与合流部267之间设置有合流部272、阀266。在合流部272上连接有旁通管273。在旁通管273上设置有阀274，还设置有等离子体监测部275。旁通管267的下游连接于后述排气管281，构成为能够排出旁通管273中的气氛。
主要由反应气体供给管261、MFC263、阀264、RPU265、非活性气体供给管268、MFC269、阀271、旁通管273、阀274构成第二气体供给部260。需要说明的是，由于第二气体供给部260是供给反应气体的构成，因此也被称为反应气体供给部。
另外，也可将反应气体供给源262、非活性气体供给源269、等离子体监测部275包括在第二气体供给部260中。
第二气体供给部260中，将阀266称为第一阀，将阀271称为第二阀，将阀274称为第三阀。
此处，作为涉及等离子体生成的比较例，对在处理室的顶板处等生成等离子体的结构进行说明。具体而言，为下述结构：在处理室的顶板埋入电极等等离子体生成部，并且形成与等离子体生成部相邻并兼为供给孔的等离子体生成室，在气体通过顶板时生成等离子体。这样的结构中，可能会在生成等离子体时蚀刻等离子体生成室的壁，如此一来，被蚀刻物可能附着于衬底。在为将多个等离子体生成室设置于顶板的结构的情况下，被蚀刻物根据等离子体生成室的数量而增加，因此，成品率的降低明显。
此外，作为涉及供给等离子体的方法的比较例，有例如专利文献1那样使用一个等离子体生成部、并使用气体引导件(gas guide)及分散板来使生成的等离子体分散而供给的方法。
专利文献1的情况下，由于等离子体生成部与衬底之间的距离远，因此不易受到被蚀刻物的影响，但认为等离子体冲撞气体引导件、分散板而失活。结果，自由基量减少，因此，存在由于反应不足等而导致无法形成所期望的膜的可能性。
特别地，由于失活量随着等离子体朝向气体引导件的前端而增多，因此，与衬底中央相比，等离子体的量在衬底的外周变少。即，不仅自由基在衬底整体上减少，而且自由基的量在衬底中央和衬底外周是不同的。因此，在衬底中央和衬底外周处，处理发生偏差。
如以上所说明的，本实施方式中，在处理室201的外侧设置有多个作为等离子体生成部的RPU265，因此，较之比较例而言，能够在不失活的情况下在衬底的径向上控制自由基量。
(排气部)
返回图1进行说明。将处理室201的气氛排出的排气部280具有与处理空间205连通的排气管281。在排气管281上设置有作为压力控制器的APC(AutoPressure Controller)282和压力检测部283，所述压力控制器将处理空间205内控制为规定的压力，所述压力检测部对处理空间205的压力进行计量。APC282具有能够调节开度的阀芯(未图示)，根据来自后述控制器400的指示对排气管281的流导进行调节。另外，排气管281中在APC282的上游侧设置有阀284。此外，在APC282的下游，连接有旁通管273。将排气管281和阀284、APC282、压力检测部283总称为排气部280。
在排气管281的下游侧设置有泵285。泵285经由排气管281而将处理室201内的气氛、旁通管273内的气氛排出。
(控制器)
衬底处理装置200具有对衬底处理装置200的各部的动作进行控制的控制器400。如图4中记载的那样，控制器400至少具有运算部(CPU)401、临时存储部402、存储部403和发送接收部404。控制器400经由发送接收部404而与衬底处理装置200的各构成连接，根据上位控制器、使用者的指示从存储部402调用程序、制程，并根据其内容控制各构成的动作。需要说明的是，控制器400可构成为专用的计算机，也可构成为通用的计算机。例如，准备存储有上述程序的外部存储装置(例如，磁带、软盘、硬盘等磁盘、CD、DVD等光盘、MO等光磁盘、USB存储器(USB Flash Drive)、存储卡等半导体存储器)412，使用外部存储装置412将程序安装至通用的计算机中，由此可构成本实施方式涉及的控制器400。另外，用于向计算机供给程序的手段不限于经由外部存储装置412进行供给的情况。例如，可使用互联网、专用线路等通信手段，也可经由发送接收部411而从上位装置420接收信息、不经由外部存储装置412而供给程序。另外，也可使用键盘、触摸面板等输入输出装置413，对控制器400进行指示。
需要说明的是，存储部402、外部存储装置412构成为计算机能够读取的记录介质。以下，将它们统一简称为记录介质。需要说明的是，本说明书中使用记录介质这一用语时，存在仅包含存储部402单体的情况、仅包含外部存储装置412单体的情况、或包含这二者的情况。
(衬底处理工序)
利用图5，对使用衬底处理装置200的衬底处理工序进行说明。通过实施本衬底处理工序，在衬底上形成薄膜。需要说明的是，以下的说明中，利用控制器400来控制构成衬底处理装置200的各部的动作。
(等离子体生成部调节工序)
对等离子体生成部调节工序进行说明。图5中，省略本工序的说明。等离子体生成部调节工序中，以能够应对各种制约的方式，对供给至各RPU265的功率进行调节。
此处，对制约的例子进行说明。其中之一为衬底处理装置的个体差异问题。个体差异与例如等离子体供给的均匀性相关。即使同样地调节各MFC263，仍然有在各衬底处理装置中等离子体向衬底面内的供给量存在偏差的情况。其原因在于组装的精度、零件的皱痕(日文：癖)等。等离子体的供给的均匀性例如是指自由基的供给量的均匀性。
本实施方式中，为了消除个体差异、均匀地供给等离子体，对等离子体的供给量进行调节，如预先确定等离子体的供给量少的部位，向与该部分对应的RPU246供给高功率等。通过各自单独地调节，能够针对衬底100均匀地供给等离子体。
另外，衬底的状态也是制约之一。对形成有例如电极等金属的衬底进行处理的情况下，需要抑制对金属的影响。另外，在形成于被搬入的衬底上的膜厚等存在偏差的情况下，为了校正该偏差，可局部性地控制自由基供给量。近年来，存在为了对多个品种的膜进行处理、而在一个衬底处理装置中处理不同种类的衬底的情况。为了应对多个种类的衬底处理，可根据衬底的种类而控制等离子体。
(衬底搬入工序)
对衬底搬入工序进行说明。图5中，省略本工序的说明。衬底处理装置200中，通过使衬底载置台212下降至衬底100的搬送位置(搬送Position)，从而使提升销207贯通衬底载置台212的贯通孔214。结果，提升销207成为比衬底载置台212表面仅突出规定的高度的部分的状态。接着，打开闸阀149，使搬送空间206与真空搬送室(未图示)连通。然后，使用晶片移载机(未图示)将衬底100从该移载室搬入搬送空间206，将衬底100移载至提升销207上。由此，使衬底100以水平姿态被支承于从衬底载置台212的表面突出的提升销207上。
将衬底100搬入腔室202内后，使晶片移载机向腔室202外退避，关闭闸阀149而将腔室202内密闭。然后，通过使衬底载置台212上升，使衬底100载置于衬底载置面211上，通过进一步使衬底载置台212上升，使衬底100上升至前述的处理空间205内的处理位置(衬底处理Position)。
将衬底100被搬入搬送空间206后，打开阀284，使处理空间205与APC282之间连通。对于APC282而言，通过调节排气管263的流导，来对基于泵285的处理空间205的排气流量进行控制，将处理空间205维持为规定的压力(例如10-5～10-1Pa的高真空)。
另外，将衬底100载置于衬底载置台212上时，向埋入衬底载置台212的内部的加热器213供给电力，以使得衬底100的表面成为规定温度的方式进行控制。衬底100的温度为例如室温以上且800℃以下，优选为室温以上且500℃以下。此时，控制器400基于由温度传感器(未图示)检测到的温度信息而提取控制值，利用温度控制部220控制向加热器213通电的情况，从而对加热器213的温度进行调节。
将衬底100升温至衬底处理温度后，在将衬底100保持为规定温度的同时，伴随加热处理实施以下的衬底处理。即，从各气体供给管向腔室202内供给处理气体，对衬底100进行处理。
以下，对使用二氯硅烷(SiH2Cl2，简称DCS)气体作为第一处理气体、使用氨气(NH3)作为第二处理气体、在衬底100上作为薄膜而形成氮化硅膜的例子进行说明。此处，实施交替供给处理(其中，重复交替地供给不同处理气体的工序)。
(第一处理气体供给工序S202)
接下来，对第一处理气体供给工序S202进行说明。如图1所示，衬底载置台212移动至晶片处理位置后，经由排气管281而从处理室201对气氛进行排气，调节处理室201内的压力。一边调节为规定的压力，一边将衬底100的温度加热至规定的温度、例如500℃至600℃。
接下来，对第一气体供给部240的动作进行说明。
原料气体供给部242中，打开阀246，并且通过MFC245调节处理气体的流量。吹扫气体供给部248中，关闭阀252。利用这样的动作，从公共气体供给管241向处理室201供给处理气体，例如向处理室供给DCS气体。所供给的DCS气体在衬底100上形成含硅层。
对第二气体供给部260的动作进行说明。等离子体控制部264设定为向RPU265供给电力，使通过RPU265内的气体成为等离子体状态。此外，通过MFC270控制非活性气体的流量，并打开阀271。此时，关闭阀266，打开阀274。
通过这样的动作，将处理气体从第一气体供给部240供给至处理空间205。此外，从第二气体供给部260不向处理空间205供给等离子体状态的反应气体，而是供给非活性气体。反应气体经由旁通管273而被排气，因此不会侵入处理空间205。
此处，对尽管本工序为供给原料气体的工序、但仍然使RPU265工作的理由进行说明。
本实施方式中，通过交替供给方法对衬底100进行处理。交替供给法中，交替地实施第一处理气体供给工序和后述第二处理气体供给工序，通过第二处理气体供给工序向衬底供给等离子体状的处理气体。
单片装置中，由于处理室205的容量小，因此各工序可在短时间内进行切换，但认为RPU265的开/关无法追随这样的切换。由于等离子体生成需要时间来达到稳定，因此，即使能够追随开/关，稳定的等离子体的供给仍无法追随。
这种情况下，虽然持续使RPU265工作，但若通过本工序供给等离子体状的气体，则处理气体在处理室201内发生反应而引起气相反应。这种情况下，无法针对深槽等纵横比高的器件图案来形成膜。
因此，本实施方式中，向RPU265供给气体，并使RPU265工作。此外，关闭阀266并打开阀274，将等离子体状的气体经由旁通管273排气。如此一来，使得在生成稳定的等离子体的同时，不会将生成的等离子体状的气体供给至处理室。
另外，通过经由非活性气体供给管268而将非活性气体供给至处理室201，可防止DCS气体侵入反应气体供给管261。通过防止侵入，可防止反应气体在供给管内与原料气体进行反应、产生副产物。
此时，通过等离子体监测部275检测等离子体的状态，并将检测状态发送至控制器280。控制器280能够读取所检测出的状态，确认是否生成了所期望的等离子体。可在例如衬底处理前使RPU工作，检测等离子体的状态，若判断等离子体状态为所期望的状态，则实施成膜工序。
另外，若控制器判断通过等离子体监测部275所检测出的检测值并非所期望的状态，则控制器可以以使其成为正常状态的方式对等离子体控制部264进行控制。例如，若判断自由基的量少，则可以以向RPU265供给更大功率的方式进行控制。
如此，在各旁通管273中检测等离子体状态，并根据该状态而对与各旁通管273对应的RPU265进行控制，从而能够更稳定地对在衬底的径向上供给的自由基的量进行控制。
经过规定时间后，关闭阀246，停止DCS气体的供给。在第二处理气体供给部260中继续将阀271设为打开、将阀266设为关闭、将阀274设为打开。
(吹扫工序S204)
接下来，对吹扫工序S204进行说明。停止供给DCS气体后，从吹扫气体供给管249供给吹扫气体，对处理室201内的气氛进行吹扫。此处，将阀246及阀266设为关闭，并将阀252、阀271、阀274设为打开。
对于处理室201而言，利用APC282以使得处理室201的压力成为规定压力的方式进行控制。由此，可利用泵285而将在第一处理气体供给工序S202中未结合于衬底100的DCS气体经由排气管281而从处理室201除去。
吹扫工序S204中，为了将未附着于衬底100、或在处理室201、喷头缓冲室232中残留的DCS气体排除，供给大量的吹扫气体以提高排气效率。
经过规定时间后，将阀252设为关闭，结束吹扫处理。
(第二处理气体供给工序S206)
接下来，对第二处理气体供给工序S206进行说明。处理室201的吹扫完成后，接着，实施第二处理气体供给工序S206。第二气体供给部260中，将阀266设为打开，将阀274、阀271设为关闭，经由RPU265、喷头230而向处理室201内供给含第二元素的气体即NH3气体作为第二处理气体。此时，以使得NH3气体的流量成为规定流量的方式调节MFC263。NH3气体的供给流量为例如1000～10000sccm。
通过关闭阀271而使得非活性气体不进入反应气体供给管261，由此能够避免非活性气体和反应气体的冲撞，防止等离子体的失活。另外，由于在持续使RPU265工作的状态下切换气体的供给，因此，能够生成稳定的等离子体。
第一气体供给部240中，构成为将阀246设为关闭从而不向处理空间205中供给DCS气体。此外，构成为将阀252设为关闭，从而不供给大量的非活性气体。
在RPU265中成为等离子体状态的NH3气体经由喷头230而被供给至处理室201内。所供给的NH3气体与衬底100上的含硅层进行反应。并且，利用NH3气体的等离子体对已经形成的含硅层进行改性。由此，在衬底100上形成例如含有硅元素及氮元素的层、即氮化硅层(SiN层)。
从开始供给NH3气体起经过规定时间后，关闭阀266，停止NH3气体的供给。NH3气体的供给时间为例如2～20秒。
需要说明的是，更优选的是，也可以使衬底载置台210旋转。通过使衬底100与衬底载置台210一同旋转，能够更均匀地向衬底面内供给等离子体。此外，通过如本实施方式这样使衬底100的旋转轴与供给孔236偏心，能够均匀地供给等离子体，而不会使等离子体集中于衬底中心部。
(吹扫工序S208)
接着，对吹扫工序S208进行说明。停止NH3气体的供给后，执行与上述的吹扫工序S204同样的吹扫工序S208。吹扫工序S208中的各部的动作与上述的吹扫工序S204相同，因此在此省略说明。
(判定工序S210)
接着，对判定工序S210进行说明。将第一处理气体供给工序S202、吹扫工序S204、第二处理气体供给工序S206、吹扫工序S208作为1个循环，控制器400判定是否已实施规定次数(n次循环)的该循环。实施规定次数的循环后，可在衬底100上形成所期望膜厚的SiN层。已实施了规定次数时(S210中为“是”的情况)，结束图5所示的处理。
(衬底搬出工序)
接下来，对衬底搬出工序进行说明。在形成所期望的膜厚的SiN层后，使衬底载置台212下降，将衬底100移动至搬送位置。然后，打开闸阀149，使用机械臂(未图示)将衬底100向腔室202外搬出。
上述实施方式中，在第二处理气体供给工序中均匀地供给了自由基。因此，能够均匀地对形成于衬底100上的原料的前体进行改性，因此，能够形成膜的结合度、密度等组成均匀的层。另外，通过将该层层合规定层，能够形成没有针孔等的致密的膜。
需要说明的是，上述实施方式中，针对使用含硅气体作为含第一元素的气体、使用含氮气体作为含第二元素的气体的情况进行了说明，但不限于此，也可使用含金属气体、含氧气体。
另外，虽然以N2气体作为非活性气体的例子进行了说明，但只要是不与处理气体反应的气体即可，不限于此。可使用例如氦(He)气、氖(Ne)气、氩(Ar)气等稀有气体。

Claims (22)

1.衬底处理装置，其具有：
处理室，其对衬底进行处理；
衬底支承部，其在所述处理室中支承衬底；
多个反应气体供给孔，其设置于所述处理室的与所述衬底支承部的衬底支承面相对的壁上；
多个反应气体供给部，其具有反应气体供给管、和设置于所述反应气体供给管的上游的等离子体生成部，所述反应气体供给管固定于所述处理室、且与所述反应气体供给孔的各自连通；
等离子体控制部，其连接于所述等离子体生成部、对多个所述等离子体生成部各自单独地进行控制；和
控制部，其对各部进行控制。
2.如权利要求1所述的衬底处理装置，其中，
所述反应气体供给部具有：
非活性气体供给管，其在所述等离子体生成部与所述处理室之间连接于所述反应气体供给管；和
旁通管，其在所述非活性气体供给管与所述等离子体生成部之间连接于所述反应气体供给管。
3.如权利要求2所述的衬底处理装置，其中，在所述旁通管上设置有等离子体监测部，所述等离子体监测部所检测出的等离子体的状态被发送至所述控制部。
4.如权利要求3所述的衬底处理装置，其中，
所述控制部在判断各所述等离子体监测部中检测出的检测值不是所期望的状态后，控制与所述等离子体监测部对应的所述等离子体控制部以使得所述检测值成为所期望的状态。
5.如权利要求4所述的衬底处理装置，其中，
在所述反应气体供给管上，在所述旁通管的连接部与所述非活性气体供给管的合流部之间设置有第一阀，
在所述非活性气体供给管上设置有第二阀，
在所述旁通管上设置有第三阀。
6.如权利要求5所述的衬底处理装置，其中，
所述处理室与原料气体供给部连通，所述原料气体供给部供给与所述反应气体反应的原料气体，
所述控制部以下述方式进行控制：
当从所述原料气体供给部供给所述原料气体时，将所述第二阀、第三阀设为打开，并且将所述第一阀设为关闭，
当未从所述原料气体供给部供给所述原料气体、而从所述反应气体供给部供给反应气体时，将所述第二阀、所述第三阀设为关闭，并且将所述第一阀设为打开。
7.如权利要求6所述的衬底处理装置，其中，
所述处理室与吹扫气体供给部连通，所述吹扫气体供给部对所述处理室的气氛进行吹扫，
以下述方式进行控制：
当从所述吹扫气体供给部供给所述吹扫气体时，将所述第二阀、所述第三阀设为打开，并且将所述第一阀设为关闭，
当未从所述吹扫气体供给部供给所述吹扫气体、而从所述反应气体供给部供给反应气体时，将所述第二阀、所述第三阀设为关闭，并且将所述第一阀设为打开。
8.如权利要求5所述的衬底处理装置，其中，
所述处理室与吹扫气体供给部连通，所述吹扫气体供给部对所述处理室的气氛进行吹扫，
所述控制部以下述方式进行控制：
当从所述吹扫气体供给部供给所述吹扫气体时，将所述第二阀、所述第三阀设为打开，并且将所述第一阀设为关闭，
当未从所述吹扫气体供给部供给所述吹扫气体、而从所述反应气体供给部供给反应气体时，将所述第二阀、所述第三阀设为关闭，并且将所述第一阀设为打开。
9.如权利要求3所述的衬底处理装置，其中，
在所述反应气体供给管上，在所述旁通供给管的连接部与所述非活性气体供给管的合流部之间设置有第一阀，
在所述非活性气体供给管上设置有第二阀，
在所述旁通管上设置有第三阀。
10.如权利要求9所述的衬底处理装置，其中，
所述处理室与原料气体供给部连通，所述原料气体供给部供给与所述反应气体反应的原料气体，
所述控制部以下述方式进行控制：
当从所述原料气体供给部供给所述原料气体时，将所述第二阀、第三阀设为打开，并且将所述第一阀设为关闭，
当未从所述原料气体供给部供给所述原料气体、而从所述反应气体供给部供给反应气体时，将所述第二阀、所述第三阀设为关闭，并且将所述第一阀设为打开。
11.如权利要求9所述的衬底处理装置，其中，
所述处理室与吹扫气体供给部连通，所述吹扫气体供给部对所述处理室的气氛进行吹扫，
所述控制部以下述方式进行控制：
当从所述吹扫气体供给部供给所述吹扫气体时，将所述第二阀、所述第三阀设为打开，并且将所述第一阀设为关闭，
当未从所述吹扫气体供给部供给所述吹扫气体、而从所述反应气体供给部供给反应气体时，将所述第二阀、所述第三阀设为关闭，并且将所述第一阀设为打开。
12.如权利要求3所述的衬底处理装置，其中，所述衬底支承部是能够旋转的结构。
13.如权利要求3所述的衬底处理装置，其中，所述反应气体供给孔以相对于所述衬底的中心轴而偏心的方式构成。
14.如权利要求2所述的衬底处理装置，其中，
在所述反应气体供给管上，在所述旁通供给管的连接部与所述非活性气体供给管的合流部之间设置有第一阀，
在所述非活性气体供给管上设置有第二阀，
在所述旁通管上设置有第三阀。
15.如权利要求14所述的衬底处理装置，其中，
所述处理室与原料气体供给部连通，所述原料气体供给部供给与所述反应气体反应的原料气体，
所述控制部以下述方式进行控制：
当从所述原料气体供给部供给所述原料气体时，将所述第二阀、第三阀设为打开，并且将所述第一阀设为关闭，
当未从所述原料气体供给部供给所述原料气体、而从所述反应气体供给部供给反应气体时，将所述第二阀、所述第三阀设为关闭，并且将所述第一阀设为打开。
16.如权利要求14所述的衬底处理装置，其中，
所述处理室与吹扫气体供给部连通，所述吹扫气体供给部对所述处理室的气氛进行吹扫，
所述控制部以下述方式进行控制：
当从所述吹扫气体供给部供给所述吹扫气体时，将所述第二阀、所述第三阀设为打开，并且将所述第一阀设为关闭，
当未从所述吹扫气体供给部供给所述吹扫气体、而从所述反应气体供给部供给反应气体时，将所述第二阀、所述第三阀设为关闭，并且将所述第一阀设为打开。
17.如权利要求14所述的衬底处理装置，其中，所述衬底支承部是能够旋转的结构。
18.如权利要求14所述的衬底处理装置，其中，所述反应气体供给孔以相对于所述衬底的中心轴而偏心的方式构成。
19.如权利要求1所述的衬底处理装置，其中，所述衬底支承部是能够旋转的结构。
20.如权利要求1所述的衬底处理装置，其中，所述反应气体供给孔以相对于所述衬底的中心轴而偏心的方式构成。
21.半导体器件的制造方法，其包括下述工序：
将衬底搬入处理室并将其载置于衬底支承部的工序；和
一边对多个等离子体生成部各自单独地进行控制，一边从多个反应气体供给部供给反应气体的工序，其中，所述反应气体供给部具有固定于所述处理室的反应气体供给管、和设置于所述反应气体供给管的上游的所述等离子体生成部，所述反应气体供给管与设置于所述处理室的与所述衬底支承部的衬底支承面相对的壁上的多个反应气体供给孔的各自相对应地设置。
22.记录介质，其记录有通过计算机来使衬底处理装置执行下述步骤的程序，所述步骤为：
将衬底搬入处理室并将其载置于衬底支承部的步骤；和
一边对多个等离子体生成部各自单独地进行控制，一边从多个反应气体供给部供给反应气体的步骤，其中，所述反应气体供给部具有固定于所述处理室的反应气体供给管、和设置于所述反应气体供给管的上游的所述等离子体生成部，所述反应气体供给管与设置于所述处理室的与所述衬底支承部的衬底支承面相对的壁上的多个反应气体供给孔的各自相对应地设置。
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