CN110896114A - PIIN型高In组分InGaAs探测器材料结构和制备方法 - Google Patents
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Abstract
本发明公开了一种PIIN型高In组分InGaAs探测器材料结构和制备方法，所述探测材料结构由下往上依次为InP(001)衬底、n型InxAl1‑xAs缓冲层、i型InyGa1‑yAs吸收层、i型InzAl1‑zAs插入层和p型InzAl1‑zAs帽层。其中，所述的InzAl1‑zAs插入层的厚度为40nm～200nm，其掺杂浓度为2x1014cm‑3～1x1015cm‑3。制备方法为依次分子束外延生长即可。本发明的优势在于，InGaAs探测材料结构中增加的i型插入层能够有效实现对PN结结位置的控制，从而实现器件暗电流的降低。
Description
技术领域
本发明属于半导体光电子器件领域，特别涉及一种PIIN型高In组分InGaAs探测器材料结构和制备方法。
背景技术
与InP衬底晶格匹配的In0.53Ga0.47As三元系材料具有直接带隙和高电子迁移率的特点，其室温下的禁带宽度约0.75eV，对应的波长约1.7微米，恰好可以覆盖光纤通信波段，因此采用In0.53Ga0.47As三元系材料制作的光电探测器在光通信领域获得了普遍应用，并且在遥感、传感和成像等方面也有重要用途。在遥感领域，截止波长大于1.7微米的探测器有着更广泛的用途，能反应更多的信息。比如，2.1微米附近的探测在冰云检测和矿产资源探测方面均有重要价值，所以在气象、环境、资源等航天遥感领域具有重要的应用。通过增加InxGa1-xAs三元系材料中Ⅲ族元素In元素的组分x可以减小InGaAs材料的禁带宽度，从而增加InGaAs探测器的截止波长。比如，x＝0.7时，InGaAs探测器的截止波长就能达到约2.2微米。但是，In组分的增加会造成InGaAs材料与InP衬底不再晶格匹配，从而在材料中引入位错，造成材料和器件性能变差。通过在InP衬底和InGaAs吸收层之间插入缓冲层，可以将位错主要限制在缓冲层中，减少InGaAs吸收层中的位错，提高In组分InGaAs探测器的性能，已经获得了一些进展。
为了减少衬底与吸收层之间的晶格失配带来的位错缺陷，目前主要采用在两层间插入组分渐变(或跃变)的缓冲层的方法。采用该技术可以有效抑制位错，改善吸收层的质量，从而使探测器性能得到改善。InAlAs材料与InGaAs材料十分相似，具有增加In的组分值则其晶格常数相应增加并保持直接带隙的特点。InAlAs材料对于所探测的光波长透明，有助于提高量子效率，同时也有利于减小表面复合，改善暗电流特性。因此采用宽禁带InAlAs材料作为帽层。
传统上，高In组分InGaAs探测材料的pn结界面位于InAlAs和InGaAs的异质界面或InGaAs层内。注意到pn结所处的材料禁带宽度越大，相应的探测器产生-复合暗电流越小，而光电流也会相应减小，所以对不同的探测器需要综合考虑，优化设计相应的探测器结构。
发明内容
本发明所要解决的技术问题是提供一种PIIN型高In组分InGaAs探测器材料结构和制备方法，该材料结构能够有效实现对PN结结位置的控制。
本发明的一种多层InGaAs探测器材料结构，所述探测材料结构由下往上依次为InP(001)衬底、n型InxAl1-xAs缓冲层、i型InyGa1-yAs吸收层、i型InzAl1-zAs插入层和p型InzAl1-zAs帽层。
所述的InP(001)衬底为半绝缘的InP(001)单晶衬底或者N型InP(001)单晶衬底。
所述的n型InxAl1-xAs缓冲层为线性渐变组分的掺Si的InxAl1-xAs材料或与吸收层晶格匹配的固定组分的掺Si的InxAl1-xAs材料，其中x的范围为0.52≤x≤1，其掺杂浓度为1x1016cm-3～5x1018cm-3。
所述的i型InyGa1-yAs吸收层，其组分具体为InyGa1-yAs，其中y的范围为0.53≤y≤1。
所述的i型InzAl1-zAs插入层，其组分具体为InzAl1-zAs，其中z的范围为0.52≤z≤1，厚度为40nm～200nm，其掺杂浓度为2x1014cm-3～1x1015cm-3。
所述的p型InzAl1-zAs帽层，其组分具体为InzAl1-zAs，其中z的范围为0.52≤z≤1，厚度为500nm～700nm，其掺杂浓度为1x1016cm-3～5x1018cm-3。
本发明的一种多层InGaAs探测器材料的制备方法，具体包括如下步骤：
(1)在InP(001)衬底上生长n型线性渐变组分的InxAl1-xAs或与吸收层晶格匹配的固定组分的InxAl1-xAs缓冲层；
(2)在n型InxAl1-xAs缓冲层上生长i型的高In组分InyGa1-yAs吸收层；
(3)生长与InyGa1-yAs层晶格匹配的固定组分的i型InzAl1-zAs材料，作为插入层；
(4)继续生长固定组分的p型InzAl1-zAs材料，作为帽层；
(5)完成PIIN型高In组分InGaAs探测器材料的制备。
有益效果
本发明提供一种PIIN型高In组分InGaAs探测器材料结构和制备方法，通过InAlAs插入层的结构设计，实现InGaAs探测器的成结由原来的异质结调整为同质结，有利于器件暗电流特性的优化。
附图说明
图1是本发明的PIIN型高In组分InGaAs探测器材料的结构示意图；
具体实施方式
下面结合具体实施例，进一步阐述本发明。应理解，这些实施例仅用于说明本发明而不用于限制本发明的范围。此外应理解，在阅读了本发明讲授的内容之后，本领域技术人员可以对本发明作各种改动或修改，这些等价形式同样落于本申请所附权利要求书所限定的范围。
实施例1
本实施例1举例说明本发明的PIIN型In0.53Ga0.47As探测器材料的制备方法，具体步骤如下：
(1)在半绝缘InP(001)衬底上生长1μm厚的n型线性渐变组分的InxAl1-xAs和与吸收层晶格匹配的固定组分的In0.52Al0.48As缓冲层，采用Si掺杂，电子浓度为1x1016cm-3；
(2)生长2μm厚的i型的In0.53Ga0.47As吸收层；
(3)生长40nm厚的i型的In0.52Al0.48As材料，作为插入层；
(4)生长500nm厚的p型In0.52Al0.48As材料，采用Be掺杂，空穴浓度为1x1016cm-3；
(5)完成PIIN型In0.53Ga0.47As探测器材料的制备。
实施例2
本实施例2举例说明本发明的PIIN型In0.7Ga0.3As探测器材料的制备方法，具体步骤如下：
(1)在N型InP(001)衬底上生长1μm厚的n型线性渐变组分的InxAl1-xAs和与吸收层晶格匹配的固定组分的In0.69Al0.31As缓冲层，采用Si掺杂，电子浓度为5x1017cm-3；
(2)生长2μm厚的i型的In0.7Ga0.3As吸收层；
(3)生长100nm厚的i型的In0.69Al0.31As材料，作为插入层；
(4)生长600nm厚的p型In0.69Al0.31As材料，采用Be掺杂，空穴浓度为5x1017cm-3；
(5)完成PIIN型In0.7Ga0.3As探测器材料的制备。
实施例3
本实施例3举例说明本发明的PIIN型In0.83Ga0.17As探测器材料的制备方法，具体步骤如下：
(1)在半绝缘InP(001)衬底上生长1μm厚的n型线性渐变组分的InxAl1-xAs和与吸收层晶格匹配的固定组分的In0.82Al0.18As缓冲层，采用Si掺杂，电子浓度为5x1018cm-3；
(2)生长1.5μm厚的i型的In0.83Ga0.17As吸收层；
(3)生长200nm厚的i型的In0.82Al0.18As材料，作为插入层；
(4)生长700nm厚的p型In0.82Al0.18As材料，采用Be掺杂，空穴浓度为5x1018cm-3；
(5)完成PIIN型In0.83Ga0.17As探测器材料的制备。
Claims (7)
1.一种PIIN型高In组分InGaAs探测器材料结构，其特征在于：所述探测材料结构自下往上依次为InP(001)衬底、n型InxAl1-xAs缓冲层、i型InyGa1-yAs吸收层、i型InzAl1-zAs插入层和p型InzAl1-zAs帽层。
2.根据权利要求1所述的一种PIIN型高In组分InGaAs探测器材料结构，其特征在于，所述的InP(001)衬底为半绝缘的InP(001)单晶衬底或者N型InP(001)单晶衬底。
3.根据权利要求1所述的一种PIIN型高In组分InGaAs探测器材料结构，其特征在于，所述的n型InxAl1-xAs缓冲层为线性渐变组分的掺Si的InxAl1-xAs材料或与吸收层晶格匹配的固定组分的掺Si的InxAl1-xAs材料，其中x的范围为0.52≤x≤1，其掺杂浓度为1x1016cm-3～5x1018cm-3。
4.根据权利要求1所述的一种PIIN型高In组分InGaAs探测器材料结构，其特征在于，所述的i型InyGa1-yAs吸收层的组分具体为InyGa1-yAs，其中y的范围为0.53≤y≤1。
5.根据权利要求1所述的一种PIIN型高In组分InGaAs探测器材料结构，其特征在于，所述的i型InzAl1-zAs插入层的组分为InzAl1-zAs，其中z的范围为0.52≤z≤1，厚度为40nm～200nm，其掺杂浓度为2x1014cm-3～1x1015cm-3。
6.根据权利要求1所述的一种PIIN型高In组分InGaAs探测器材料结构，其特征在于，所述的p型InzAl1-zAs帽层的组分为InzAl1-zAs，其中z的范围为0.52≤z≤1，厚度为500nm～700nm，其掺杂浓度为1x1016cm-3～5x1018cm-3。
7.一种制备如权利要求1所述的PIIN型高In组分InGaAs探测器材料结构的方法，其特征在于方法步骤如下：
(1)在InP(001)衬底上生长n型线性渐变组分的InxAl1-xAs或与吸收层晶格匹配的固定组分的InxAl1-xAs缓冲层；
(2)在n型InxAl1-xAs缓冲层上生长i型的高In组分InyGa1-yAs吸收层；
(3)生长与InyGa1-yAs层晶格匹配的固定组分的i型InzAl1-zAs材料，作为插入层；
(4)继续生长固定组分的p型InzAl1-zAs材料，作为帽层；
(5)完成PIIN型高In组分InGaAs探测器材料的制备。
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