CN110891733A - 用于活性焊接的焊接材料和用于活性焊接的方法 - Google Patents
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Abstract
本发明提出一种用于活性焊接的焊接材料(1),尤其用于将金属化部(3)活性焊接到包括陶瓷的承载层(2)上,其中焊接材料具有铜并且基本上是不含银的。
Description
技术领域
背景技术
焊接材料从现有技术中充分已知,例如从US 2014 126 155A1中已知,并且用于器件的材料配合的连接。尤其,本发明涉及如下焊接材料,所述焊接材料设为用于活性焊接并且用于将金属化部接合到包括陶瓷的承载衬底上。典型地,当焊接应当在低于1000℃的温度下进行时,这种焊接材料包括相对高的银份额。所述高的银份额伴随着相对高的材料成本。此外,当在运动中施加电场时,在包括陶瓷的承载衬底上的焊接层的边缘处出现银迁移的风险。
从US 4 603 0990 A中已知一种可延展的焊接薄膜。在此,焊接薄膜可以由0.1至5重量%的出自Ti、V、Zr的组的反应性金属或由出自所述组的元素以及1至30重量%的铟和55至99.8重量%的铜的混合物构成。
从DE 10 2015 108 668 A1中已知一种用于制造电路板的方法,其中电路板具有面状的基础材料,尤其陶瓷,在所述基础材料上在一侧或两侧借助于焊料层安置金属化部。
US 4 426 033A涉及一种反应性金属铜合金,其具有特定量的出自硅、锡、锗、锰、镍、钴的组的第三金属或由其构成的混合物,其中所述合金适合于焊接陶瓷。
US 4 784 313 A提到一种用于将由SiC陶瓷构成的成形件彼此连接或与由其他陶瓷或金属构成的成形件连接的方法,其中将要连接的表面通过在扩散焊接条件下插入金属层来接合。在此提出,作为金属层设有由MnCu(具有25至82重量%的Cu)或MnCo(具有5至50重量%的Co)构成的锰合金层,所述锰合金层可能附加地各自具有2至45重量%的金属Cr、Ti、Zr、Fe、Ni和/或Ta中的至少一种,其中添加物的总和应当不超过70重量%。
从DE 698 22 533 T1还了解一种陶瓷元件,所述陶瓷元件具有电流供应端子,其中金属元件嵌入到陶瓷元件中并且相对于陶瓷元件的凹部部分地露出,管状的大气屏蔽元件插入到凹部中并且与嵌入的金属元件连接。
发明内容
因此,本发明的目的是,提供一种焊接材料,所述焊接材料与现有技术相比能成本有益地制造并且其中能够避免银迁移。
所述目的通过根据权利要求1所述的用于活性焊接的焊接材料,通过根据权利要求9所述的承载层和通过根据权利要求11所述的方法来实现。本发明的其他优点和特征在从属权利要求以及说明书和附图中得出。
根据本发明,提出一种用于活性焊接,尤其用于将金属化部活性焊接到包括陶瓷的承载层上的焊接材料,其中焊接材料包括铜并且基本上是不含银的。
与现有技术相比,在根据本发明的焊接材料中有利地弃用银,由此可以降低制造成本并且可以避免银迁移。在此,代替银,铜和铜合金是焊接材料的主要组成部分。将“基本上不含银”尤其应理解为,焊接材料具有在杂质范围内的银份额,也就是说在焊接材料的小于0.5重量%,优选小于0.1重量%并且特别优选小于0.05重量%的范围内的银份额。原则上,例如借助于焊接材料可以将多个陶瓷层彼此连接,或者将金属化部,优选铜层接合到包括陶瓷的承载层上。优选地提出,将连接于承载层的金属化部结构化,尤其结构化成,以便例如构成用于电器件或电子器件的连接部位或印制导线。
优选提出,焊接材料在生产步骤中不具有银或银残留物或者减少其份额。由此能有利地确保,焊接材料是不含银的。
将活性焊接法,例如用于将金属层或金属薄膜,尤其是铜层或铜薄膜与陶瓷材料连接的活性焊接法理解为如下方法,在所述方法中,在大约650至1000℃之间的温度下利用焊接材料建立在金属薄膜、例如铜薄膜和陶瓷衬底、例如氮化铝陶瓷之间的连接。在此,焊接材料除了主要组分铜之外也包含活性金属。例如是Hf、Ti、Zr、Nb、Ce、Cr、V、Y、Sc中的至少一种元素的所述活性金属通过与陶瓷的化学反应借助于反应层建立在焊接材料和陶瓷之间的连接,而在焊接材料和金属之间的连接是金属硬焊连接。
尤其提出,承载层具有Al2O3、Si3N4、AlN、BeO或ZTA(Zirconia toughenedAlumina,氧化锆增韧氧化铝)陶瓷,下面称作HPSX陶瓷(也就是说,具有Al2O3基体的陶瓷,其包括x百分比份额的ZrO2,例如具有9%的ZrO2的Al2O3=HPS9或者具有25%的ZrO2的Al2O3=HPS25),其中也可考虑提出的载体材料的组合。
根据本发明的另一实施方式提出,焊接材料具有在50和90重量%之间,优选在55和85重量%之间并且特别优选在50重量%和75重量%之间的铜份额。在此有利地,铜份额替代通常相对高的银份额。铜份额在此可以与各个其他组合部分相关地设定。
优选地提出,铜具有在焊接材料的63和75重量%之间,优选64和70重量%之间并且特别优选65和70重量%之间的份额。证实为有利的是,在这种组成的情况下,可以使用相对大数量的不同的辅助金属或活性金属,以便实现没有银的工艺可靠的焊接材料(也就是说可以实现可靠且持久的焊接的焊接材料)。这有利地允许焊接材料个体化地匹配于相应的应用情况,而不必动用用于焊接材料的含银的组成。
在本发明的另一实施方式中提出,焊接材料为了降低熔化温度而具有辅助材料,优选锗(Ga)、铟(In)、锰(Mn)或锡(Sn)。通过添加辅助材料,如辅助金属,能有利地设定在700-900℃之间的熔化温度。辅助金属Ga、In、Mn或Sn在此证实为特别有利的,因为其也适合于在低的蒸汽压力,例如低于10-3mbar下,例如在真空焊接时的焊接工艺。
在本发明的另一实施方式中提出,辅助材料占焊接材料的份额为5至50重量%,优选5和40重量%和特别优选5和35重量%。辅助材料的添加量优选取决于期望的设为用于焊接工艺的熔化温度。在此尤其对于In、Ga和Sn适用的是:辅助材料越多,熔化或焊接温度就越低。然而,熔化温度降低被如下限制,熔化或焊接温度必须是高的,使得在活性金属和陶瓷表面之间进行化学反应。典型地,熔化温度在此必须高于700和800℃。借助辅助材料的份额在5和35重量%之间的组成,能有利地提供活性金属,其中一方面熔化温度降低是足够大的并且另一方面与尽可能大量的不同陶瓷表面是兼容的。此外,能降低金属间相的份额,其可能造成焊接连接的减少的机械坚固性,因为随着辅助材料的份额增加,金属间相的份额也升高。
适宜地提出,焊接材料作为活性金属具有Ti、Zr、Hf、Cr、V、Y、Sc或Ce。在此尤其提出,活性金属具有占焊接材料的0.5至10重量%,优选1至5重量%并且特别优选1至3重量%的份额。活性金属的份额优选与应用情况相关地,例如与要添加的材料相关地调整。
尤其提出,焊接材料是膏或薄膜。例如,膏优选作为由除了铜和活性金属以外也包括辅助材料的粉末和有机材料构成的组合物提供。有机材料使膏有利地是可丝网印刷的和可硬化的。在一个有利的实施方式中提出,铜和辅助材料作为微合金粉末存在。例如,这涉及微合金粉末,所述微合金粉末在雾化工艺的范围内借助于雾化设备产生。活性金属优选粉末状地混入,例如作为Ti、Zr、TiH和/或ZrH。为了提高活性金属在焊接工艺中的可溶性,有利地提出,活性金属也与焊接材料的其他材料一起作为二元或三元合金粉末状地添加给或混入焊接材料。为了活性金属的尽可能均匀的分布可考虑的是,将活性金属集成到在雾化设备中要制成合金的粉末中。因为活性金属与雾化设备的壁部发生反应,所以在此优选设有1至2体积%的活性金属的份额。
只要焊接材料作为薄膜提供,那么能有利地弃用有机添加物。为了形成焊接层在此在金属化部和承载层之间设置薄膜。特别优选地,在此是在焊接材料中相对低份额的辅助材料和活性金属。
根据本发明的一个优选的实施方式提出,焊接材料基本上具有:
-64重量%的铜、34重量%的锰和2重量%的钛,
-64重量%的铜、34重量%的铟和2重量%的钛,
-75重量%的铜、23重量%的锡和2重量%的钛,
-69重量%的铜、13重量%的锡、16重量%的铟和2重量%的钛,
-66重量%的铜、16重量%的锡、16重量%的锰和2重量%的钛,
-66重量%的铜、16重量%的铟、16重量%的锰和2重量%的钛,或
-69重量%的铜、12重量%的锡、7重量%的锰、10重量%的铟和2重量%的钛,
以及小于0.5重量%的不可避免的杂质。尤其,将表达“基本上”理解为如下偏差,所述偏差与相应的精确值偏差﹢/-10%,优选偏差+/-5%和/或对应于呈对于函数不重要的变化的形式的偏差。
本发明的另一主题是一种具有金属化部的承载层,其中金属化部经由根据上述权利要求中任一项所述的焊接材料接合到承载层上。所有针对根据本发明的焊接材料所描述的特征及其优点能够符合意义地同样转用于根据本发明的承载层并且反之亦然。优选地,金属化部,例如铜层或钼层是结构化的,以构成用于电器件或电子器件的连接部位和印制导线。结构化优选通过蚀刻实现。
本发明的另一主题是一种用于将金属化部接合到承载层,尤其包括陶瓷的承载层上的方法,其中使用根据上述权利要求中任一项所述的焊接材料。所有针对根据本发明的焊接材料所描述的特征及其优点能够符合意义地同样转用于根据本发明的方法并且反之亦然。
优选提出,在小于1000℃,优选小于900℃并且特别优选小于850℃的焊接温度下执行接合。优选地,焊接材料相应地设计,例如通过添加相应量的活性金属或辅助金属,以便实现期望的温度。通过在低温,尤其低于850℃的温度下的焊接可行的是,在焊接时的能量耗费保持得相对小。
根据本发明的另一实施方式提出,焊接材料在丝网印刷法中涂覆到包括陶瓷的承载层上。由此能将焊接材料有利地均匀地面状地涂覆,尤其用于将金属层面状地接合到陶瓷层上。
附图说明
从参照附图在下文中对根据本发明的主题的优选的实施方式的描述中得出其他优点和特征。各个实施方式的各个特征在此可以在本发明的范围内彼此组合。
附图示出:
图1:根据本发明的一个示例性的实施方式的具有金属化部的承载层。
具体实施方式
在图1中示出根据本发明的一个示例性的实施方式的具有金属化部的承载层2。在此优选涉及其上设置电子器件或电器件的承载层2。为此设有金属化部3,优选结构化的金属化部3,以便提供用于电器件或电子器件的连接部位或印制导线。金属化部3优选借助于活性焊接法接合到承载层2上,所述承载层尤其包括铜。为了降低制造成本并且为了避免银迁移,优选地提出,将焊接材料1用于活性焊接,所述焊接材料包括铜并且基本上是不含银的。
在活性焊接法中,在大约650至1000℃之间的温度下,利用焊接材料1建立在金属薄膜,例如铜薄膜和陶瓷衬底,例如氮化铝陶瓷之间的连接,所述焊接材料除了主要成分铜之外也包含活性金属。例如是Hf、Ti、Zr、Nb、Ce中的至少一种元素的所述活性金属通过化学反应建立在焊接材料和陶瓷之间的连接,而焊接材料和金属之间的连接是金属硬焊连接。
为了使焊接材料匹配于需要的熔化温度,尤其提出,焊接材料1具有辅助材料,优选Ga、In、Mn或Sn。
Claims (14)
1.一种用于活性焊接的焊接材料(1),尤其用于将金属化部(3)活性焊接到包括陶瓷的承载层(2)上,其中所述焊接材料包括铜并且基本上是不含银的。
2.根据权利要求1所述的焊接材料(1),
其中铜具有占焊接材料的50重量%和90重量%之间、优选55重量%和85重量之间%并且特别优选50重量%和75重量%之间的份额。
3.根据权利要求1所述的焊接材料(1),
其中铜具有占焊接材料的63重量%和75重量%之间、优选64重量%和70重量之间%并且特别优选65重量%和70重量%之间的份额。
4.根据上述权利要求中任一项所述的焊接材料(1),
其中所述焊接材料为了降低熔化温度而具有辅助材料,优选Ga、In、Mn或Sn。
5.根据权利要求4所述的焊接材料(1),
其中所述辅助材料具有占焊接材料的5重量%至50重量%的份额,优选5重量%和40重量%的份额,并且特别优选5重量%和35重量%的份额。
6.根据上述权利要求中任一项所述的焊接材料(1),
其中所述焊接材料(1)具有活性金属,优选Ti、Zr、Hf、Nb、Cr、V、Y、Sc或Ce。
7.根据权利要求6所述的焊接材料(1),
其中所述活性金属具有占焊接材料的0.5重量%至10重量%、优选1重量%和5重量%并且特别优选1重量%和3重量%的份额。
8.根据上述权利要求中任一项所述的焊接材料(1),
其中所述焊接材料(1)是膏或薄膜。
9.根据上述权利要求中任一项所述的焊接材料(1),其中所述焊接材料(1)基本上具有:
-64重量%的铜、34重量%的锰和2重量%的钛,
-64重量%的铜、34重量%的铟和2重量%的钛,
-75重量%的铜、23重量%的锡和2重量%的钛,
-69重量%的铜、13重量%的锡、16重量%的铟和2重量%的钛,
-66重量%的铜、16重量%的锡、16重量%的锰和2重量%的钛,
-66重量%的铜、16重量%的铟、16重量%的锰和2重量%的钛,或
-69重量%的铜、12重量%的锡、7重量%的锰、10重量%的铟和2重量%的钛,
此外具有小于0.5重量%的不可避免的杂质。
10.一种具有金属化部(3)的承载层(2),
其中所述金属化部(3)经由根据上述权利要求中任一项所述的焊接材料(1)接合到所述承载层(2)上。
11.一种用于将金属化部(3)接合到承载层(2)、尤其包括陶瓷的承载层(2)上的方法,
其中使用根据权利要求1至9中任一项所述的焊接材料(1)。
12.根据权利要求11所述的方法,
其中在小于1000℃并且优选小于900℃的焊接温度下进行接合。
13.根据权利要求12所述的方法,
在小于850℃的焊接温度下执行接合。
14.根据权利要求11至13中任一项所述的方法,
其中将所述焊接材料(1)在丝网印刷法中涂覆到包括陶瓷的所述承载层(2)上。
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CN115515916A (zh) * | 2020-04-29 | 2022-12-23 | 罗杰斯德国有限公司 | 制造金属陶瓷基板的方法和用该方法制造的金属陶瓷基板 |
CN115515916B (zh) * | 2020-04-29 | 2024-05-31 | 罗杰斯德国有限公司 | 制造金属陶瓷基板的方法和用该方法制造的金属陶瓷基板 |
CN112059470A (zh) * | 2020-09-08 | 2020-12-11 | 中物院成都科学技术发展中心 | 钛酸盐微波介质陶瓷与金属钎焊用活性钎料及其制备方法 |
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JP7093796B2 (ja) | 2022-06-30 |
KR20200027529A (ko) | 2020-03-12 |
DE102017114893B4 (de) | 2023-11-23 |
CN110891733B (zh) | 2022-05-27 |
JP2020527461A (ja) | 2020-09-10 |
EP3609647B1 (de) | 2021-04-14 |
DE102017114893A1 (de) | 2019-01-10 |
US20200384579A1 (en) | 2020-12-10 |
US11338397B2 (en) | 2022-05-24 |
EP3609647A1 (de) | 2020-02-19 |
WO2019008003A1 (de) | 2019-01-10 |
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