CN110832649B - 发光元件封装件及该发光元件封装件的制造方法 - Google Patents
发光元件封装件及该发光元件封装件的制造方法 Download PDFInfo
- Publication number
- CN110832649B CN110832649B CN201980002623.3A CN201980002623A CN110832649B CN 110832649 B CN110832649 B CN 110832649B CN 201980002623 A CN201980002623 A CN 201980002623A CN 110832649 B CN110832649 B CN 110832649B
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- 238000004519 manufacturing process Methods 0.000 title description 9
- 238000000034 method Methods 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims abstract description 102
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 description 33
- 239000010410 layer Substances 0.000 description 32
- 239000000463 material Substances 0.000 description 30
- 239000000853 adhesive Substances 0.000 description 17
- 230000001070 adhesive effect Effects 0.000 description 17
- 229920000620 organic polymer Polymers 0.000 description 13
- 239000002019 doping agent Substances 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- -1 and the like Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- 239000004809 Teflon Substances 0.000 description 4
- 229920006362 Teflon® Polymers 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000012811 non-conductive material Substances 0.000 description 4
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- 239000002861 polymer material Substances 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
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- 238000005516 engineering process Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- 229920002284 Cellulose triacetate Polymers 0.000 description 2
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 2
- 239000004713 Cyclic olefin copolymer Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000805 composite resin Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229920000295 expanded polytetrafluoroethylene Polymers 0.000 description 1
- 238000012966 insertion method Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229920001684 low density polyethylene Polymers 0.000 description 1
- 239000004702 low-density polyethylene Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
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- 239000010453 quartz Substances 0.000 description 1
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- 230000003252 repetitive effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911389651.3A CN111092143B (zh) | 2018-06-08 | 2019-06-10 | 发光元件封装件 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2018-0065751 | 2018-06-08 | ||
KR1020180065751A KR102624113B1 (ko) | 2018-06-08 | 2018-06-08 | 발광 소자 패키지 및 이의 제조 방법 |
PCT/KR2019/006930 WO2019235900A1 (ko) | 2018-06-08 | 2019-06-10 | 발광 소자 패키지 및 이의 제조 방법 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911389651.3A Division CN111092143B (zh) | 2018-06-08 | 2019-06-10 | 发光元件封装件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110832649A CN110832649A (zh) | 2020-02-21 |
CN110832649B true CN110832649B (zh) | 2024-04-19 |
Family
ID=68769385
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201980002623.3A Active CN110832649B (zh) | 2018-06-08 | 2019-06-10 | 发光元件封装件及该发光元件封装件的制造方法 |
CN201920864983.1U Active CN209896099U (zh) | 2018-06-08 | 2019-06-10 | 发光元件封装件以及光照射装置 |
CN201911389651.3A Active CN111092143B (zh) | 2018-06-08 | 2019-06-10 | 发光元件封装件 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201920864983.1U Active CN209896099U (zh) | 2018-06-08 | 2019-06-10 | 发光元件封装件以及光照射装置 |
CN201911389651.3A Active CN111092143B (zh) | 2018-06-08 | 2019-06-10 | 发光元件封装件 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20210091278A1 (ko) |
EP (1) | EP3806172A4 (ko) |
JP (1) | JP2021527324A (ko) |
KR (1) | KR102624113B1 (ko) |
CN (3) | CN110832649B (ko) |
WO (1) | WO2019235900A1 (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102624113B1 (ko) * | 2018-06-08 | 2024-01-12 | 서울바이오시스 주식회사 | 발광 소자 패키지 및 이의 제조 방법 |
CN113394320B (zh) * | 2020-03-11 | 2023-04-07 | 隆达电子股份有限公司 | 发光二极管封装结构 |
CN114038983A (zh) * | 2021-11-17 | 2022-02-11 | 厦门瑶光半导体科技有限公司 | 深紫外led光源封装结构 |
WO2024111079A1 (ja) * | 2022-11-24 | 2024-05-30 | 三菱電機株式会社 | 車室内撮影装置 |
Citations (10)
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CN1672269A (zh) * | 2002-06-19 | 2005-09-21 | 三垦电气株式会社 | 半导体发光装置及其制法和半导体发光装置用反射器 |
JP2006049624A (ja) * | 2004-08-05 | 2006-02-16 | Sharp Corp | 発光素子 |
KR20070002612A (ko) * | 2005-06-30 | 2007-01-05 | 엘지.필립스 엘시디 주식회사 | 백라이트유닛 |
JP2007086367A (ja) * | 2005-09-21 | 2007-04-05 | Ibiden Co Ltd | 光ピン、光ピンコネクタ及び光路変換用モジュール |
WO2007074983A1 (en) * | 2005-12-29 | 2007-07-05 | Seoul Semiconductor Co., Ltd. | Light emitting diode |
JP2007220852A (ja) * | 2006-02-16 | 2007-08-30 | Shinko Electric Ind Co Ltd | 発光装置及びその製造方法 |
KR20070094247A (ko) * | 2006-03-17 | 2007-09-20 | 서울반도체 주식회사 | 반사기를 구비하는 측면 발광 다이오드 패키지 |
JP2008288394A (ja) * | 2007-05-17 | 2008-11-27 | Sharp Corp | 金属反射壁の製造方法 |
KR20140134202A (ko) * | 2013-05-13 | 2014-11-21 | 서울반도체 주식회사 | 소형 발광소자 패키지 및 그 제조 방법 |
CN107949922A (zh) * | 2015-09-08 | 2018-04-20 | 首尔伟傲世有限公司 | 发光二极管封装件 |
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JPS6063970A (ja) * | 1983-09-17 | 1985-04-12 | Fanuc Ltd | 平行光線を放射する発光ダイオ−ド |
JP4572891B2 (ja) * | 2002-06-19 | 2010-11-04 | サンケン電気株式会社 | 半導体発光装置 |
TW200532324A (en) * | 2004-03-23 | 2005-10-01 | Ace T Corp | Light source device |
KR100643919B1 (ko) * | 2005-11-24 | 2006-11-10 | 삼성전기주식회사 | 렌즈를 구비한 발광 다이오드 패키지 |
JP2007227480A (ja) * | 2006-02-21 | 2007-09-06 | Toshiba Corp | 半導体発光装置 |
EP2073280A1 (de) * | 2007-12-20 | 2009-06-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Reflektive Sekundäroptik und Halbleiterbaugruppe sowie Verfahren zu dessen Herstellung |
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DE102012109131A1 (de) * | 2012-09-27 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Optoelektronische Bauelementevorrichtung, Verfahren zum Herstellen einer optoelektronischen Bauelementevorrichtung und Verfahren zum Betreiben einer optoelektronischen Bauelementevorrichtung |
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-
2018
- 2018-06-08 KR KR1020180065751A patent/KR102624113B1/ko active IP Right Grant
-
2019
- 2019-06-10 WO PCT/KR2019/006930 patent/WO2019235900A1/ko unknown
- 2019-06-10 JP JP2020568305A patent/JP2021527324A/ja active Pending
- 2019-06-10 CN CN201980002623.3A patent/CN110832649B/zh active Active
- 2019-06-10 CN CN201920864983.1U patent/CN209896099U/zh active Active
- 2019-06-10 EP EP19815307.4A patent/EP3806172A4/en active Pending
- 2019-06-10 CN CN201911389651.3A patent/CN111092143B/zh active Active
-
2020
- 2020-12-07 US US17/113,448 patent/US20210091278A1/en active Pending
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CN1672269A (zh) * | 2002-06-19 | 2005-09-21 | 三垦电气株式会社 | 半导体发光装置及其制法和半导体发光装置用反射器 |
JP2006049624A (ja) * | 2004-08-05 | 2006-02-16 | Sharp Corp | 発光素子 |
KR20070002612A (ko) * | 2005-06-30 | 2007-01-05 | 엘지.필립스 엘시디 주식회사 | 백라이트유닛 |
JP2007086367A (ja) * | 2005-09-21 | 2007-04-05 | Ibiden Co Ltd | 光ピン、光ピンコネクタ及び光路変換用モジュール |
WO2007074983A1 (en) * | 2005-12-29 | 2007-07-05 | Seoul Semiconductor Co., Ltd. | Light emitting diode |
JP2007220852A (ja) * | 2006-02-16 | 2007-08-30 | Shinko Electric Ind Co Ltd | 発光装置及びその製造方法 |
KR20070094247A (ko) * | 2006-03-17 | 2007-09-20 | 서울반도체 주식회사 | 반사기를 구비하는 측면 발광 다이오드 패키지 |
JP2008288394A (ja) * | 2007-05-17 | 2008-11-27 | Sharp Corp | 金属反射壁の製造方法 |
KR20140134202A (ko) * | 2013-05-13 | 2014-11-21 | 서울반도체 주식회사 | 소형 발광소자 패키지 및 그 제조 방법 |
CN107949922A (zh) * | 2015-09-08 | 2018-04-20 | 首尔伟傲世有限公司 | 发光二极管封装件 |
Also Published As
Publication number | Publication date |
---|---|
EP3806172A4 (en) | 2022-03-09 |
JP2021527324A (ja) | 2021-10-11 |
EP3806172A1 (en) | 2021-04-14 |
WO2019235900A1 (ko) | 2019-12-12 |
CN111092143A (zh) | 2020-05-01 |
CN110832649A (zh) | 2020-02-21 |
KR20190139371A (ko) | 2019-12-18 |
CN111092143B (zh) | 2024-05-07 |
US20210091278A1 (en) | 2021-03-25 |
KR102624113B1 (ko) | 2024-01-12 |
CN209896099U (zh) | 2020-01-03 |
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