CN110829170B - 光源装置 - Google Patents

光源装置 Download PDF

Info

Publication number
CN110829170B
CN110829170B CN201910098476.6A CN201910098476A CN110829170B CN 110829170 B CN110829170 B CN 110829170B CN 201910098476 A CN201910098476 A CN 201910098476A CN 110829170 B CN110829170 B CN 110829170B
Authority
CN
China
Prior art keywords
light
electrode layer
pads
source device
lower electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910098476.6A
Other languages
English (en)
Other versions
CN110829170A (zh
Inventor
蔡心伟
陈怡如
曹侯焱
吴家政
杨淑桦
苏渝宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lite On Opto Technology Changzhou Co Ltd
Lite On Technology Corp
Original Assignee
Lite On Opto Technology Changzhou Co Ltd
Lite On Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lite On Opto Technology Changzhou Co Ltd, Lite On Technology Corp filed Critical Lite On Opto Technology Changzhou Co Ltd
Priority to US16/535,719 priority Critical patent/US10895374B2/en
Publication of CN110829170A publication Critical patent/CN110829170A/zh
Application granted granted Critical
Publication of CN110829170B publication Critical patent/CN110829170B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V23/00—Arrangement of electric circuit elements in or on lighting devices
    • F21V23/06—Arrangement of electric circuit elements in or on lighting devices the elements being coupling devices, e.g. connectors
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V25/00—Safety devices structurally associated with lighting devices
    • F21V25/02—Safety devices structurally associated with lighting devices coming into action when lighting device is disturbed, dismounted, or broken
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/30—Semiconductor lasers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/171—Frame
    • H01L2924/1715—Shape
    • H01L2924/17151—Frame comprising an aperture, e.g. for pressure control, encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/171—Frame
    • H01L2924/173—Connection portion, e.g. seal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明公开一种光源装置。所述光源装置包含基板、分别设置于基板相反板面的上电极层与下电极层、安装于上电极层的发光单元、设置于基板且围绕于发光单元外侧的围墙、设置于围墙的导电单元、设置于围墙上并覆盖发光单元的透光件、及形成于透光件外表面的检测回路；所述下电极层包含共平面设置的第一下电极层和第二下电极层，发光单元通过上电极层电性耦接于第一下电极层，导电单元电性耦接于所述第二下电极层；检测回路含有两个接点，并且检测回路的两个接点连接于导电单元，以通过导电单元而电性耦接于第二下电极层。据此，所述透光件能通过上述检测回路而得知是否破损。

Description

光源装置
技术领域
本发明涉及一种光源装置，尤其涉及一种在透光件上形成有检测回路的光源装置。
背景技术
现有光源装置中并未针对于损坏的情况设有相对应的机制，所以当现有光源装置的透光件(如：玻璃)在受到外力而有损伤时，现有光源装置所发出的光线容易伤害人眼。
于是，本发明人认为上述缺陷可改善，因此特别潜心研究并配合科学原理的运用，终于提出一种设计合理且有效改善上述缺陷的发明。
发明内容
本发明实施例在于提供一种光源装置，其能有效地改善现有光源装置所可能产生的缺陷。
本发明实施例公开一种光源装置，包括：一基板，包含有位于相反侧的一第一板面与一第二板面；一上电极层与一下电极层，分别设置于所述基板的所述第一板面和所述第二板面，所述下电极层包含共平面设置的一第一下电极层和一第二下电极层；一发光单元，安装于所述上电极层，并且所述发光单元通过所述上电极层电性耦接于所述第一下电极层；一围墙，设置于所述第一板面上、并围绕于所述发光单元的外侧；一导电单元，设置于所述围墙并且电性耦接于所述第二下电极层；其中，所述导电单元包含有多个第一接垫及多个第二接垫，并且多个所述第一接垫于所述围墙上的第一高度位置不同于多个所述第二接垫于所述围墙上的第二高度位置；一透光件，设置于所述围墙上，并且所述透光件覆盖所述发光单元；至少一个检测回路，形成于所述透光件并包含有两个接点，至少一个所述检测回路的两个所述接点连接于多个所述第一接垫或多个所述第二接垫，并且至少一个所述检测回路通过所述导电单元而电性耦接于所述第二下电极层。
优选地，所述透光件定义有一中心区块及围绕于所述中心区块的一外围区块，所述发光单元位于所述中心区块的正下方，所述外围区块对应所述围墙上方设置；其中，至少一个所述检测回路的两个所述接点形成于所述外围区块上，以连接多个所述第一接垫或多个所述第二接垫。
优选地，至少一个所述检测回路呈透光状且包含有连接两个所述接点的一检测导线，所述检测导线形成于所述中心区块及所述外围区块的至少其中之一。
优选地，所述围墙呈环形阶梯状且包含有：一上阶面，远离所述基板；一上梯面，相连于所述上阶面的内缘；一下阶面，位于所述上梯面内侧，并且所述下阶面与所述第一板面的距离小于所述上阶面与所述第一板面的距离；一下梯面，相连于所述下阶面内缘且远离所述上阶面，所述下梯面围绕于所述发光单元外侧；其中，多个所述第一接垫设置于所述下阶面，并且多个所述第二接垫设置于所述上梯面与所述上阶面的至少其中之一。
优选地，所述透光件包含有位于相反侧的一外表面与一内表面，并且所述内表面面向所述发光单元；其中，至少一个所述检测回路形成于所述内表面，并且至少一个所述检测回路的两个所述接点连接于多个所述第一接垫。
优选地，所述透光件包含有位于相反侧的一外表面与一内表面，并且所述内表面面向所述发光单元；其中，至少一个所述检测回路形成于所述外表面，并且至少一个所述检测回路的两个所述接点连接于多个所述第二接垫。
优选地，所述透光件包含有位于相反侧的一外表面与一内表面，并且所述内表面面向所述发光单元，而多个所述第二接垫设置于所述上梯面；其中，至少一个所述检测回路形成于所述外表面，并且至少一个所述检测回路及所述外表面的位置低于所述上阶面，而至少一个所述检测回路的两个所述接点连接于多个所述第二接垫。
优选地，所述下阶面包含有：两个U形区，内缘彼此相向，并且每个所述U形区的两个外角落各形成有一收容沟；两个功能区，位于两个所述U形区之间，并且多个所述第一接垫分别设置于两个所述功能区上。
优选地，所述下阶面形成有多个阻隔槽，并且两个所述功能区通过多个所述阻隔槽而间隔于两个所述U形区。
优选地，多个所述第一接垫分别电性耦接于多个所述第二接垫，并且所述导电单元包含有埋置于所述围墙内的至少一条传输线路，而至少一条所述传输线路的两端分别连接于设置在不同所述功能区上的两个所述第一接垫。
优选地，至少一个所述检测回路的两个所述接点分别连接于设置在不同所述功能区上的两个所述第一接垫或其相邻的两个所述第二接垫。
优选地，所述发光单元进一步限定为一垂直腔面发射激光器。
本发明实施例也公开一种光源装置，包括：一基板，包含有位于相反侧的一第一板面与一第二板面；一上电极层与一下电极层，分别设置于所述基板的所述第一板面和所述第二板面，所述下电极层包含共平面设置的一第一下电极层和一第二下电极层；一发光单元，安装于所述上电极层，并且所述发光单元通过所述上电极层电性耦接于所述第一下电极层；一围墙，设置于所述第一板面上、并围绕于所述发光单元的外侧；一导电单元，设置于所述围墙并且电性耦接于所述第二下电极层；一透光件，设置于所述围墙上，并且所述透光件覆盖所述发光单元；两条检测回路，形成于所述透光件并各包含有两个接点，每个所述检测回路的两个所述接点连接于所述导电单元，并且两条所述检测回路通过所述导电单元而电性耦接于所述第二下电极层。
本发明实施例另公开一种光源装置，包括：一基板，包含有位于相反侧的一第一板面与一第二板面；一上电极层与一下电极层，分别设置于所述基板的所述第一板面和所述第二板面，所述下电极层包含共平面设置的一第一下电极层和一第二下电极层；一发光单元，安装于所述上电极层，并且所述发光单元通过所述上电极层电性耦接于所述第一下电极层；一围墙，设置于所述第一板面上、并围绕于所述发光单元的外侧；一导电单元，设置于所述围墙并且电性耦接于所述第二下电极层；一透光件，设置于所述围墙上，并且所述透光件覆盖所述发光单元，所述透光件包含有位于相反侧的一外表面与一内表面；一检测回路，形成于所述透光件的所述外表面并包含有两个接点，所述检测回路的两个所述接点连接于所述导电单元，并且所述检测回路通过所述导电单元而电性耦接于所述第二下电极层。
综上所述，本发明实施例所公开的光源装置，其通过设置于围墙的导电单元，以使透光件上的检测回路能够通过导电单元而电性耦接于第二下电极层，以利于控制器通过所述第二下电极层来测得上述检测回路的阻值，进而得知透光件是否破损。
为能更进一步了解本发明的特征及技术内容，请参阅以下有关本发明的详细说明与附图，但是这种说明与附图仅用来说明本发明，而非对本发明的保护范围作任何的限制。
附图说明
图1为本发明实施例一的光源装置的立体示意图。
图2为图1另一视角的立体示意图。
图3为图1的分解示意图(省略黏着胶层)。
图4为图3的俯视示意图(省略透光件及黏着胶层)。
图5为图4沿剖线V-V的剖视示意图。
图6为图1沿剖线VI-VI的剖视示意图。
图7为图1沿剖线VⅡ-VⅡ的剖视示意图。
图8为本发明实施例二的光源装置的立体示意图。
图9为图8的分解示意图(省略导电胶与黏着胶层)。
图10为图8沿剖线X-X的剖视示意图。
图11为本发明实施例三的光源装置的立体示意图。
图12为图11的分解示意图(省略导电胶与黏着胶层)。
图13为本发明实施例四的光源装置的立体示意图。
图14为图13的分解示意图(省略导电胶与黏着胶层)。
图15为本发明实施例五的光源装置的立体示意图。
图16为图15沿剖线XVI-XVI的剖视示意图。
具体实施方式
请参阅图1至图16所示，其为本发明的实施例，需先说明的是，本实施例对应附图所提及的相关数量与外型，仅用来具体地说明本发明的实施方式，以便于了解本发明的内容，而非用来局限本发明的保护范围。
如图1至图3所示，本实施例公开一种光源装置100，其包含有一基板1、位于上述基板1相反两侧的一上电极层2与一下电极层3、埋置于基板1内的多个导通柱4、设置于上电极层2的一发光单元5、设置于基板1上并围绕发光单元5的一围墙6、设置于围墙6的一导电单元7、设置于围墙6上并覆盖发光单元5的一透光件8、形成于透光件8的两条检测回路9、及连接固定上述透光件8与围墙6的一黏着胶层G(如图7所示)。以下将分别说明光源装置100的各个组件构造及其连接关系。
如图2至图4所示，基板1于本实施例中大致呈方形(如：长方形或正方形)。其中，本实施例的基板1包含有位于相反侧的一第一板面11与一第二板面12，基板1是以一种陶瓷基板来说明，具有较好的散热效果，本发明并不以此限。
上电极层2设置于上述基板1的第一板面11上，并且上电极层2包含有两个上电极垫21，用以供发光单元5固晶和打线。下电极层3设置于上述基板1的第二板面12上，并且下电极层3包含有共平面设置的一第一下电极层31和一第二下电极层32。其中，第一下电极层31包含有两个第一下电极垫311，第二下电极层32包含有两个第二下电极垫321，并且第一下电极层31的两个第一下电极垫311分别通过多个导通柱4而电性耦接于上电极层2的两个上电极垫21，而第二下电极层32的两个第二下电极垫321则是电性耦接于上述导电单元7。
如图2至图4所示，发光单元5于本实施例中是以一种垂直腔面发射激光器(Vertical-Cavity Surface-Emitting Laser，VCSEL)来说明，但本发明不以此为限。发光单元5安装于上电极层2(的大致中央部位)，以通过上电极层2电性耦接于第一下电极层31。于本实施例中，上述发光单元5是固定于上电极层2的其中一个上电极垫21、并打线连接至其中另一个上电极垫21，以使发光单元5通过上电极垫21及其相连的多个导通柱4而电性耦接于第一下电极层31。
如图3和图4所示，围墙6设置于上述基板1的第一板面11上、并围绕于发光单元5的外侧。围墙6的外侧缘切齐于基板1的外侧缘，并且上电极层2的外围部位优选是埋置于围墙6内，以增加基板和围墙的结合力。其中，围墙6的内侧部位呈环形阶梯状，并且本实施例的围墙6选用陶瓷材料，但本发明不受限于此。举例来说，在本发明未绘示的其他实施例中，围墙6与基板1也可以是一体成形的单件式构件。
进一步地说，围墙6由外而内依序包含有一上阶面61、相连于上阶面61内缘的一上梯面62、位于上梯面62内侧的一下阶面63、及相连于下阶面63内缘且远离上阶面61的一下梯面64。
其中，上阶面61呈方环状(如：长方环状或正方环状)且远离基板1，上阶面61于本实施例中也就是围墙6的顶面、并且优先是平行于基板1的第一板面11。上梯面62呈方环状且垂直地相连于上阶面61内缘。下阶面63呈方环状且相连于上梯面62的内缘，并且下阶面63优选是平行于上阶面61，而下阶面63与第一板面11的距离小于上阶面61与第一板面11的距离。下梯面64呈方环状，下梯面64垂直地相连于下阶面63内缘，并且下梯面64与基板1的第一板面11包围形成有一容置槽S。其中，发光单元5位于上述容置槽S内；也就是说，下梯面64围绕于发光单元5的外侧。
更详细地说，下阶面63于本实施例中包含有内缘彼此相向的两个U形区631、位于上述两个U形区631之间的两个功能区632、及多个阻隔槽633。其中，每个U形区631的两个外角落各形成有用以供上述黏着胶层G容置的一收容沟6311，并且每个收容沟6311于本实施例中大致呈L形。两个功能区632通过多个阻隔槽633而间隔于上述两个U形区631；也就是说，每个功能区632与任一个相邻的U形区631之间是以一个阻隔槽633隔开，据以使功能区632能够避免碰触到黏着胶层G。除了避免碰触到黏着胶层G外，阻隔槽633还可以作为逃气通道。
如图4至图6所示，导电单元7设置于围墙6并且电性耦接于第二下电极层32。于本实施例中，导电单元7包含有多个第一接垫71、位置分别对应于多个第一接垫71的多个第二接垫72、分别连接上述多个第一接垫71至多个第二接垫72的多条连接线73、分别连接上述多个第一接垫71的两条传输线路74、及分别连接于上述两条传输线路74的两个导电柱75。
其中，多个第一接垫71与多个第二接垫72皆设置于围墙6上，并且多个第一接垫71于围墙6上的第一高度位置不同于(如：低于)多个第二接垫72于围墙6上的第二高度位置。而于本实施例中，多个第一接垫71设置于围墙6的下阶面63，并且多个第二接垫72设置于上梯面62与上阶面61的至少其中之一。
进一步地说，多个第一接垫71分别设置于下阶面63的两个功能区632上，多个第二接垫72设置于上梯面62(及上阶面61)，并且多个第二接垫72的位置分别邻近于上述多个第一接垫71的位置。其中，多条连接线73埋置于围墙6内，并且每条连接线73的两端分别连接于一个第一接垫71及其相邻的第二接垫72，据以使多个第一接垫71(能通过多条连接线73)分别电性耦接于多个第二接垫72。
再者，上述两条传输线路74埋置于围墙6内，而每条传输线路74于本实施例中大部分位于一个U形区631及其相邻的两个阻隔槽633的下方，并且每条传输线路74的两端分别连接于设置在不同功能区632上的两个第一接垫71。换个角度来看，上述每条传输线路74于围墙6内的第三高度位置低于上述多个第一接垫71于围墙6上的第一高度位置。
两条传输线路74的局部分别位于第二下电极层32的两个第二下电极垫321的上方。两个导电柱75埋置于上述围墙6与基板1内，并且上述两个导电柱75的一端分别连接于两条传输线路74，而两个导电柱75的另一端则分别连接于第二下电极层32的两个第二下电极垫321，据以使两条传输线路74分别电性耦接于第二下电极层32的两个第二下电极垫321。
需额外说明的是，导电单元7于本实施例中虽是以包含上述构件来说明，但导电单元7也可以依据设计需求而加以调整变化。举例来说，在本发明未绘示的其他实施例中，导电单元7可以未形成有任何第二接垫72及多条连接线73，或者导电单元7仅在一个功能区632上设有多个第一接垫71。
如图3、图6、及图7所示，透光件8设置于围墙6的下阶面63、并与上梯面62之间呈间隔设置(也就是，透光件8未接触于上梯面62)。其中，透光件8于本实施例中定义有一中心区块81及围绕于中心区块81的一外围区块82，发光单元5位于中心区块81的正下方，外围区块82对应围墙6上方设置。再者，透光件8包含有位于相反侧的一外表面83与一内表面84，并且内表面84面向上述发光单元5，透光件8外表面83低于围墙6的上阶面61，但本发明不以此为限。举例来说，在本发明未绘示的其他实施例中，透光件8的外表面83可以伸出围墙6的上阶面61。
更详细地说，透光件8于本实施例中为一透明玻璃板和设置于透明玻璃板上的一光扩散聚合物(light-diffusing polymer)P，上述光扩散聚合物P位于中心区块81的内表面84、并面向(或覆盖)上述发光单元5。再者，围墙6的每个收容沟6311能用来容纳部分黏着胶层G，而其余部分黏着胶层G溢出上述收容沟6311，以使透光件8外围区块82的内表面84通过溢出上述收容沟6311的黏着胶层G而固定于围墙6的下阶面63。
如图3、图6、及图7所示，两条检测回路9形成于上述透光件8，而本实施例中每条检测回路9形成于透光件8的内表面84、并位于透光件8的外围区块82上。其中，每条检测回路9优选呈透光状(如：透明的导电膜，氧化铟锡ITO)、且包含有两个接点91及连接上述两个接点91的一检测导线92。每条检测回路9的两个接点91邻近地设置在透光件8的一边且成对设置，而检测导线92沿着透光件8的其他三个边环状设置，以连接两个接点91。另一条检测回路9的两个接点91对应上述的两个接点91成对设置(两对接点91呈对边设置)，而检测导线92同样沿着透光件8的其他三个边环状设置，以连接两个接点91。值得注意的是，每条检测导线92除了环状设置外，还会将另一条检测回路9的至少一接点91围绕其内。然而，在本发明未绘示的其他实施例中，如果上述检测回路9是形成在透光件8的外围区块82时，检测回路9也可以是不透光状。
两条检测回路9的多个接点91分别连接于上述导电单元7的多个第一接垫71，据以使每条检测回路9通过导电单元7而电性耦接于第二下电极层32。其中，每条检测回路9的两个接点91分别连接于不同传输线路74相连的两个第一接垫71，据以使每条检测回路9的两个接点91能够分别电性耦接至两个第二下电极垫321。
此外，光源装置100也可以使用上述透光件8外表面83形成有检测回路9的组件；也就是说，光源装置100通过导电单元7的设置，据以能够适用于上述透光件8内表面84形成有检测回路9的组件或是适用于透光件8外表面83形成有检测回路9的组件。据此，检测回路9的两个接点91可以连接于多个第一接垫71或多个第二接垫72。
进一步地说，如图8至图10所示，两条检测回路9形成于上述透光件8的外表面83，并且上述两条检测回路9及透光件8外表面83的位置低于围墙6的上阶面61，据以使两条检测回路9的多个接点91通过导电胶C能够连接于多个第二接垫72。其中，上述检测回路9的任一个接点91与相对应第二接垫72之间的连接可以是：以导电胶C充填于透光件8与围墙6上梯面62之间的缝隙，并通过导电胶C电性连接上述接点91及第二接垫72，但本发明不以此为限。值得注意的是，两条检测回路9避开透光件8的中心区块81以形成在透光件8的外围区块82，且每条检测回路9的两个接点91邻近地设置在透光件8的一边且成对设置，另一条检测回路9的两个接点91对应上述的两个接点91成对设置(两对接点91呈对边设置)。上述两条检测回路9包含内检测回路9a和外检测回路9b，内检测回路9a的检测导线92沿中心区块81的外框环绕设置，外检测回路9b设置在内检测回路9a的外围，且外检测回路9b的检测导线92大致沿着透光件8的三个边环状设置。换个角度来说，内检测回路9a的检测导线92所围绕的区域大致呈方形，而外检测回路9b所围绕的区域大致呈U形。
需额外说明的是，每条检测回路9的两个接点91及检测导线92的外形与位置也可以依据设计需求而加以调整变化。举例来说，如图11和图12所示，形成于透光件8的检测回路9数量可以是至少一条，并且检测回路9的检测导线92避开中心区块81且以二至三圈的环状形成于透光件8的外围区块82，任一条检测回路9的两个接点91分别连接于设置在不同功能区632上的两个第二接垫72(或其相邻的两个第一接垫71)。
再者，形成于透光件8的检测回路9的数量于本实施例中虽是以两条来说明，但本发明不受限于此。举例来说，如图13和图14所示，形成于透光件8的检测回路9数量可以是至少一条，并且检测回路9的检测导线92可以是形成于透光件8的中心区块81及外围区块82，且检测回路9的两个接点91分别连接于设置在同一功能区632上的两个第二接垫72。换个角度来说，如将透光件8的外表面83划分为矩阵排列的多个方格时，上述检测回路9可以是大致沿经外表面83的所有方格，但本发明不受限于此。
此外，在透光件8外表面83形成有检测回路9的光源装置100中，为提升接点91及第二接垫72之间的电连接稳定性，光源装置100能进一步包含有黏接于导电胶C的至少一个导电片M(如图15)，并且上述光源装置100的导电片M数量于本实施例中是等同于导电单元7的第二接垫72数量，但本发明不受限于此。
进一步地说，如图15和图16所示，围墙6于上阶面61与上梯面62的交界处凹设形成有两个缺口611，并且导电单元7的两个第二接垫72分别容置于上述两个缺口611内、并分别大致与检测回路9的两个接点91等高。上述检测回路9的任一个接点91与相对应第二接垫72之间的连接例如是：导电胶C充填于透光件8与围墙6上梯面62之间的缝隙，并通过导电胶C电性连接上述接点91、第二接垫72、及导电片M。也就是说，接点91与第二接垫72除了以导电胶C达成电性连接之外、还能进一步通过导电片M来达成电性连接，据以有效地提升提升接点91及第二接垫72之间的电连接稳定性。再者，每个导电片M跨接于相对应的接点91与第二接垫72，并且每个导电片M的局部位于相对应的缺口611内。
[本发明实施例的技术效果]
综上所述，本发明实施例所公开的光源装置，其通过在围墙形成有导电单元，以使透光件上的检测回路能够通过导电单元而电性耦接于第二下电极层，以利于通过第二下电极层来测得上述检测回路的阻值，进而得知透光件是否破损。
再者，本发明实施例所公开的光源装置，其通过导电单元的设置(如：位于围墙不同高度位置的多个第一接垫与多个第二接垫)，据以能够适用于上述透光件内表面形成有检测回路的组件或是适用于透光件外表面形成有检测回路的组件。
另，本发明实施例所公开的光源装置，其下阶面在每个功能区与任一个相邻的U形区之间以一个阻隔槽隔开，以使功能区上的第一接垫能够避免碰触到黏着胶层而电性失效。
以上所述仅为本发明的优选可行实施例，并非用来局限本发明的保护范围，凡依本发明专利范围所做的均等变化与修饰，皆应属本发明的权利要求书的保护范围。

Claims (14)

1.一种光源装置，其特征在于，所述光源装置包括：
一基板，包含有位于相反侧的一第一板面与一第二板面；
一上电极层与一下电极层，分别设置于所述基板的所述第一板面和所述第二板面，所述下电极层包含共平面设置的一第一下电极层和一第二下电极层；
一发光单元，安装于所述上电极层，并且所述发光单元通过所述上电极层电性耦接于所述第一下电极层；
一围墙，设置于所述第一板面上、并围绕于所述发光单元的外侧；
一导电单元，设置于所述围墙并且电性耦接于所述第二下电极层；其中，所述导电单元包含有多个第一接垫及多个第二接垫，并且多个所述第一接垫于所述围墙上的第一高度位置不同于多个所述第二接垫于所述围墙上的第二高度位置；
一透光件，设置于所述围墙上，并且所述透光件覆盖所述发光单元；以及
至少一个检测回路，形成于所述透光件并包含有两个接点，至少一个所述检测回路的两个所述接点连接于多个所述第一接垫或多个所述第二接垫，并且至少一个所述检测回路通过所述导电单元而电性耦接于所述第二下电极层。
2.依据权利要求1所述的光源装置，其特征在于，所述透光件定义有一中心区块及围绕于所述中心区块的一外围区块，所述发光单元位于所述中心区块的正下方，所述外围区块对应所述围墙上方设置；其中，至少一个所述检测回路的两个所述接点形成于所述外围区块上，以连接多个所述第一接垫或多个所述第二接垫。
3.依据权利要求2所述的光源装置，其特征在于，至少一个所述检测回路呈透光状且包含有连接两个所述接点的一检测导线，所述检测导线形成于所述中心区块及所述外围区块的至少其中之一。
4.依据权利要求1所述的光源装置，其特征在于，所述围墙呈环形阶梯状且包含有：
一上阶面，远离所述基板；
一上梯面，相连于所述上阶面的内缘；
一下阶面，位于所述上梯面内侧，并且所述下阶面与所述第一板面的距离小于所述上阶面与所述第一板面的距离；及
一下梯面，相连于所述下阶面内缘且远离所述上阶面，所述下梯面围绕于所述发光单元外侧；
其中，多个所述第一接垫设置于所述下阶面，并且多个所述第二接垫设置于所述上梯面与所述上阶面的至少其中之一。
5.依据权利要求4所述的光源装置，其特征在于，所述透光件包含有位于相反侧的一外表面与一内表面，并且所述内表面面向所述发光单元；其中，至少一个所述检测回路形成于所述内表面，并且至少一个所述检测回路的两个所述接点连接于多个所述第一接垫。
6.依据权利要求4所述的光源装置，其特征在于，所述透光件包含有位于相反侧的一外表面与一内表面，并且所述内表面面向所述发光单元；其中，至少一个所述检测回路形成于所述外表面，并且至少一个所述检测回路的两个所述接点连接于多个所述第二接垫。
7.依据权利要求4所述的光源装置，其特征在于，所述透光件包含有位于相反侧的一外表面与一内表面，并且所述内表面面向所述发光单元，而多个所述第二接垫设置于所述上梯面；其中，至少一个所述检测回路形成于所述外表面，并且至少一个所述检测回路及所述外表面的位置低于所述上阶面，而至少一个所述检测回路的两个所述接点连接于多个所述第二接垫。
8.依据权利要求4所述的光源装置，其特征在于，所述下阶面包含有：
两个U形区，内缘彼此相向，并且每个所述U形区的两个外角落各形成有一收容沟；及
两个功能区，位于两个所述U形区之间，并且多个所述第一接垫分别设置于两个所述功能区上。
9.依据权利要求8所述的光源装置，其特征在于，所述下阶面形成有多个阻隔槽，并且两个所述功能区通过多个所述阻隔槽而间隔于两个所述U形区。
10.依据权利要求8所述的光源装置，其特征在于，多个所述第一接垫分别电性耦接于多个所述第二接垫，并且所述导电单元包含有埋置于所述围墙内的至少一条传输线路，而至少一条所述传输线路的两端分别连接于设置在不同所述功能区上的两个所述第一接垫。
11.依据权利要求8所述的光源装置，其特征在于，至少一个所述检测回路的两个所述接点分别连接于设置在不同所述功能区上的两个所述第一接垫或其相邻的两个所述第二接垫。
12.依据权利要求1所述的光源装置，其特征在于，所述发光单元进一步限定为一垂直腔面发射激光器。
13.一种光源装置，其特征在于，所述光源装置包括：
一基板，包含有位于相反侧的一第一板面与一第二板面；
一上电极层与一下电极层，分别设置于所述基板的所述第一板面和所述第二板面，所述下电极层包含共平面设置的一第一下电极层和一第二下电极层；
一发光单元，安装于所述上电极层，并且所述发光单元通过所述上电极层电性耦接于所述第一下电极层；
一围墙，设置于所述第一板面上、并围绕于所述发光单元的外侧；
一导电单元，设置于所述围墙并且电性耦接于所述第二下电极层；
一透光件，设置于所述围墙上，并且所述透光件覆盖所述发光单元；以及
两条检测回路，形成于所述透光件并各包含有两个接点，每个所述检测回路的两个所述接点连接于所述导电单元，并且两条所述检测回路通过所述导电单元而电性耦接于所述第二下电极层。
14.一种光源装置，其特征在于，所述光源装置包括：
一基板，包含有位于相反侧的一第一板面与一第二板面；
一上电极层与一下电极层，分别设置于所述基板的所述第一板面和所述第二板面，所述下电极层包含共平面设置的一第一下电极层和一第二下电极层；
一发光单元，安装于所述上电极层，并且所述发光单元通过所述上电极层电性耦接于所述第一下电极层；
一围墙，设置于所述第一板面上、并围绕于所述发光单元的外侧；
一导电单元，设置于所述围墙并且电性耦接于所述第二下电极层；
一透光件，设置于所述围墙上，并且所述透光件覆盖所述发光单元，所述透光件包含有位于相反侧的一外表面与一内表面；以及
一检测回路，形成于所述透光件的所述外表面并包含有两个接点，所述检测回路的两个所述接点连接于所述导电单元，并且所述检测回路通过所述导电单元而电性耦接于所述第二下电极层。
CN201910098476.6A 2018-08-08 2019-01-31 光源装置 Active CN110829170B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/535,719 US10895374B2 (en) 2018-08-08 2019-08-08 Light source device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862715817P 2018-08-08 2018-08-08
US62/715,817 2018-08-08

Publications (2)

Publication Number Publication Date
CN110829170A CN110829170A (zh) 2020-02-21
CN110829170B true CN110829170B (zh) 2021-06-04

Family

ID=65982917

Family Applications (4)

Application Number Title Priority Date Filing Date
CN201821589077.7U Active CN208723309U (zh) 2018-08-08 2018-09-27 光源装置
CN201811401708.2A Active CN110828439B (zh) 2018-08-08 2018-11-22 光源装置及可携式通讯设备
CN201822090325.XU Active CN209592080U (zh) 2018-08-08 2018-12-12 光源装置
CN201910098476.6A Active CN110829170B (zh) 2018-08-08 2019-01-31 光源装置

Family Applications Before (3)

Application Number Title Priority Date Filing Date
CN201821589077.7U Active CN208723309U (zh) 2018-08-08 2018-09-27 光源装置
CN201811401708.2A Active CN110828439B (zh) 2018-08-08 2018-11-22 光源装置及可携式通讯设备
CN201822090325.XU Active CN209592080U (zh) 2018-08-08 2018-12-12 光源装置

Country Status (2)

Country Link
US (2) US11262060B2 (zh)
CN (4) CN208723309U (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN208723309U (zh) * 2018-08-08 2019-04-09 光宝光电(常州)有限公司 光源装置
US10866375B2 (en) * 2018-08-08 2020-12-15 Lite-On Opto Technology (Changzhou) Co., Ltd. Light source device and electronic apparatus
JP6763452B1 (ja) * 2019-04-15 2020-09-30 富士ゼロックス株式会社 発光装置、光学装置および情報処理装置
CN111917002B (zh) * 2019-05-07 2021-08-06 光宝光电(常州)有限公司 光源装置
US11205731B2 (en) 2019-05-07 2021-12-21 Lite-On Opto Technology (Changzhou) Co., Ltd. Light source package structure
CN214275378U (zh) * 2020-10-08 2021-09-24 光宝科技股份有限公司 碗杯结构及发光装置
JP7425262B2 (ja) * 2020-12-01 2024-01-30 シグニファイ ホールディング ビー ヴィ レーザベースの照明デバイス
WO2023008159A1 (ja) * 2021-07-29 2023-02-02 ヌヴォトンテクノロジージャパン株式会社 ３次元測距モジュール及び３次元測距システム
CN115164131A (zh) * 2022-07-28 2022-10-11 漳州冠誉灯饰有限公司 一种超声波灯头灯串焊接方法及灯串
CN116801484B (zh) * 2023-08-11 2024-03-08 荣耀终端有限公司 一种单板及其制备方法、电子设备

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101329042A (zh) * 2007-06-18 2008-12-24 南茂科技股份有限公司 光源组件
CN201821002U (zh) * 2010-07-28 2011-05-04 西安炬光科技有限公司 一种多发光单元半导体激光器模块
CN102054921A (zh) * 2009-11-09 2011-05-11 亿光电子工业股份有限公司 发光二极管封装结构与其制造方法
CN102194779A (zh) * 2010-03-02 2011-09-21 日月光半导体制造股份有限公司 封装结构
CN203823501U (zh) * 2014-04-03 2014-09-10 弘凯光电(深圳)有限公司 Led发光装置
JP2015106577A (ja) * 2013-11-28 2015-06-08 三菱電機株式会社 光通信用半導体パッケージ
CN107210583A (zh) * 2015-01-30 2017-09-26 皮曼德技术股份公司 照明装置
CN107851962A (zh) * 2015-07-28 2018-03-27 日本电信电话株式会社 光模块

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0308748A3 (de) * 1987-09-25 1990-07-04 Siemens Aktiengesellschaft Elektrooptische Baugruppe
FR2758935B1 (fr) * 1997-01-28 2001-02-16 Matra Marconi Space France Boitier micro-electronique multi-niveaux
JP3722279B2 (ja) * 2001-01-26 2005-11-30 日本電気株式会社 光送受信モジュール
JP2004146441A (ja) * 2002-10-22 2004-05-20 Sharp Corp 半導体レーザ装置
JP2005294709A (ja) * 2004-04-02 2005-10-20 Matsushita Electric Ind Co Ltd 双方向光モジュール
JP2008004896A (ja) * 2006-06-26 2008-01-10 Toshiba Corp 半導体レーザ装置およびパッケージ
US9279946B2 (en) * 2012-05-23 2016-03-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Premolded cavity for optoelectronic device
US9048367B2 (en) * 2012-06-04 2015-06-02 Brightek Optoelectronic Co., Ltd. Multichip package structure for generating a symmetrical and uniform light-blending source
KR102116823B1 (ko) * 2013-09-13 2020-06-01 삼성디스플레이 주식회사 광원, 그것의 제조 방법, 및 그것을 포함하는 백라이트 유닛
FR3025858B1 (fr) * 2014-09-15 2016-12-09 Valeo Vision Module lumineux avec diodes led et oled
KR102305234B1 (ko) * 2015-01-28 2021-09-29 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 광원 유닛
CN106328796B (zh) * 2015-06-29 2018-09-14 光宝光电(常州)有限公司 发光二极体封装结构及晶片承载座
WO2018105358A1 (ja) * 2016-12-09 2018-06-14 株式会社村田製作所 フォトカプラ
US10866375B2 (en) * 2018-08-08 2020-12-15 Lite-On Opto Technology (Changzhou) Co., Ltd. Light source device and electronic apparatus
CN208723309U (zh) * 2018-08-08 2019-04-09 光宝光电(常州)有限公司 光源装置
US10816176B1 (en) * 2019-05-07 2020-10-27 Lite-On Opto Technology (Changzhou) Co., Ltd. Light source package structure
US11414849B2 (en) * 2019-05-12 2022-08-16 Naoki Sonoda Hand wash and dump sink assembly

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101329042A (zh) * 2007-06-18 2008-12-24 南茂科技股份有限公司 光源组件
CN102054921A (zh) * 2009-11-09 2011-05-11 亿光电子工业股份有限公司 发光二极管封装结构与其制造方法
CN102194779A (zh) * 2010-03-02 2011-09-21 日月光半导体制造股份有限公司 封装结构
CN201821002U (zh) * 2010-07-28 2011-05-04 西安炬光科技有限公司 一种多发光单元半导体激光器模块
JP2015106577A (ja) * 2013-11-28 2015-06-08 三菱電機株式会社 光通信用半導体パッケージ
CN203823501U (zh) * 2014-04-03 2014-09-10 弘凯光电(深圳)有限公司 Led发光装置
CN107210583A (zh) * 2015-01-30 2017-09-26 皮曼德技术股份公司 照明装置
CN107851962A (zh) * 2015-07-28 2018-03-27 日本电信电话株式会社 光模块

Also Published As

Publication number Publication date
CN110829170A (zh) 2020-02-21
CN110828439B (zh) 2021-06-08
US20200051965A1 (en) 2020-02-13
US20200049337A1 (en) 2020-02-13
CN209592080U (zh) 2019-11-05
CN110828439A (zh) 2020-02-21
US11262060B2 (en) 2022-03-01
US11035563B2 (en) 2021-06-15
CN208723309U (zh) 2019-04-09

Similar Documents

Publication Publication Date Title
CN110829170B (zh) 光源装置
CN110262701B (zh) 一种显示面板及显示装置
US20110175119A1 (en) Light emitting apparatus and lighting system
EP2492983A2 (en) Light emitting device and light unit using same
KR20130022074A (ko) 발광 모듈 및 백라이트 유닛
US11079611B2 (en) Optical module for protecting human eyes
JP7534687B2 (ja) 発光モジュールの製造方法、発光モジュール及びプロジェクタ
CN110262702B (zh) 一种显示面板及显示装置
JP2013115116A (ja) Ｌｅｄモジュール
JP4315833B2 (ja) 回路装置
US20200251458A1 (en) Light source device
US11588074B2 (en) Light source device
KR102055563B1 (ko) 이미지 센서 패키지
KR102090156B1 (ko) 표시장치
KR101413596B1 (ko) 발광장치 및 이를 구비하는 백라이트 유닛
US10895374B2 (en) Light source device
JP6087098B2 (ja) 光源装置、ｌｅｄランプ、および液晶表示装置
CN115000270A (zh) 光源模组及显示装置
US20200355357A1 (en) Light source package structure
US11217572B2 (en) Light source device
CN214948349U (zh) 光源装置
CN213089561U (zh) 光源装置
CN111917003B (zh) 光源装置
CN111432051B (zh) 行动通信装置及其光学封装结构
KR20140141283A (ko) 표시장치

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant