CN110808293A - 太阳能电池光接收表面的钝化 - Google Patents

太阳能电池光接收表面的钝化 Download PDF

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Publication number
CN110808293A
CN110808293A CN201910999294.6A CN201910999294A CN110808293A CN 110808293 A CN110808293 A CN 110808293A CN 201910999294 A CN201910999294 A CN 201910999294A CN 110808293 A CN110808293 A CN 110808293A
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CN
China
Prior art keywords
silicon layer
layer
forming
amorphous silicon
receiving surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910999294.6A
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English (en)
Chinese (zh)
Inventor
林承笵
吉娜维芙·A·所罗门
迈克尔·C·约翰逊
热罗姆·达蒙-拉科斯特
安托万·玛里·奥利维耶·萨洛蒙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TotalEnergies Marketing Services SA
SunPower Corp
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Total Marketing Services SA
SunPower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Total Marketing Services SA, SunPower Corp filed Critical Total Marketing Services SA
Publication of CN110808293A publication Critical patent/CN110808293A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
CN201910999294.6A 2014-03-26 2015-03-24 太阳能电池光接收表面的钝化 Pending CN110808293A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/226,368 2014-03-26
US14/226,368 US20150280018A1 (en) 2014-03-26 2014-03-26 Passivation of light-receiving surfaces of solar cells
CN201580003357.8A CN106133916B (zh) 2014-03-26 2015-03-24 太阳能电池光接收表面的钝化

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201580003357.8A Division CN106133916B (zh) 2014-03-26 2015-03-24 太阳能电池光接收表面的钝化

Publications (1)

Publication Number Publication Date
CN110808293A true CN110808293A (zh) 2020-02-18

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN201910999294.6A Pending CN110808293A (zh) 2014-03-26 2015-03-24 太阳能电池光接收表面的钝化
CN201580003357.8A Active CN106133916B (zh) 2014-03-26 2015-03-24 太阳能电池光接收表面的钝化

Family Applications After (1)

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Country Status (8)

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US (2) US20150280018A1 (enExample)
JP (1) JP2017509153A (enExample)
KR (2) KR20210043013A (enExample)
CN (2) CN110808293A (enExample)
AU (2) AU2015236203A1 (enExample)
DE (1) DE112015001440T5 (enExample)
TW (1) TWI675490B (enExample)
WO (1) WO2015148568A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109983586B (zh) * 2016-11-03 2024-03-12 道达尔销售服务公司 太阳能电池的表面处理
KR101995833B1 (ko) * 2016-11-14 2019-07-03 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US20190386158A1 (en) * 2016-12-16 2019-12-19 Sunpower Corporation Plasma-curing of light-receiving surfaces of solar cells
CN115692544B (zh) * 2021-07-28 2025-09-23 环晟光伏(江苏)有限公司 一种Topcon电池钝化结构的制备方法

Citations (6)

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US7468485B1 (en) * 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
US20110111548A1 (en) * 2009-10-05 2011-05-12 Ismail Kashkoush Method of manufacturing a solar cell using a pre-cleaning step that contributes to homogeneous texture morphology
JP2012049156A (ja) * 2010-08-24 2012-03-08 Osaka Univ 太陽電池およびその製造方法
CN102959730A (zh) * 2010-12-02 2013-03-06 太阳能公司 形成背接触太阳能电池触点的方法
US20130130430A1 (en) * 2011-05-20 2013-05-23 Solexel, Inc. Spatially selective laser annealing applications in high-efficiency solar cells
US20140020742A1 (en) * 2011-03-28 2014-01-23 Sanyo Electric Co., Ltd. Photoelectric conversion device and method for producing photoelectric conversion device

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JPH06163952A (ja) * 1992-11-26 1994-06-10 Kyocera Corp 太陽電池素子
JPH08274356A (ja) * 1995-03-29 1996-10-18 Kyocera Corp 太陽電池素子
JP3281760B2 (ja) * 1995-04-26 2002-05-13 三洋電機株式会社 光起電力装置の製造方法
JP4197193B2 (ja) * 1996-07-08 2008-12-17 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP4070483B2 (ja) * 2002-03-05 2008-04-02 三洋電機株式会社 光起電力装置並びにその製造方法
NL1030200C2 (nl) * 2005-10-14 2007-04-17 Stichting Energie Werkwijze voor het vervaardigen van n-type multikristallijn silicium zonnecellen.
US20070169808A1 (en) * 2006-01-26 2007-07-26 Kherani Nazir P Solar cell
US7737357B2 (en) * 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
EP2135292A2 (en) * 2007-03-16 2009-12-23 BP Corporation North America Inc. Solar cells
KR101293162B1 (ko) * 2007-11-09 2013-08-12 선프림, 리미티드 저-비용 태양 전지 및 그 제조 방법
US8076175B2 (en) * 2008-02-25 2011-12-13 Suniva, Inc. Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation
US7951637B2 (en) * 2008-08-27 2011-05-31 Applied Materials, Inc. Back contact solar cells using printed dielectric barrier
US9564542B2 (en) * 2009-09-17 2017-02-07 Tetrasun, Inc. Selective transformation in functional films, and solar cell applications thereof
US20110068367A1 (en) * 2009-09-23 2011-03-24 Sierra Solar Power, Inc. Double-sided heterojunction solar cell based on thin epitaxial silicon
KR20110128619A (ko) * 2010-05-24 2011-11-30 삼성전자주식회사 태양 전지 및 이의 제조 방법
KR101275575B1 (ko) * 2010-10-11 2013-06-14 엘지전자 주식회사 후면전극형 태양전지 및 이의 제조 방법
JP5723143B2 (ja) * 2010-12-06 2015-05-27 シャープ株式会社 裏面電極型太陽電池の製造方法、および裏面電極型太陽電池
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US7468485B1 (en) * 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
US20110111548A1 (en) * 2009-10-05 2011-05-12 Ismail Kashkoush Method of manufacturing a solar cell using a pre-cleaning step that contributes to homogeneous texture morphology
JP2012049156A (ja) * 2010-08-24 2012-03-08 Osaka Univ 太陽電池およびその製造方法
CN102959730A (zh) * 2010-12-02 2013-03-06 太阳能公司 形成背接触太阳能电池触点的方法
US20140020742A1 (en) * 2011-03-28 2014-01-23 Sanyo Electric Co., Ltd. Photoelectric conversion device and method for producing photoelectric conversion device
US20130130430A1 (en) * 2011-05-20 2013-05-23 Solexel, Inc. Spatially selective laser annealing applications in high-efficiency solar cells

Also Published As

Publication number Publication date
AU2015236203A1 (en) 2016-06-16
KR20210043013A (ko) 2021-04-20
US20190051769A1 (en) 2019-02-14
CN106133916A (zh) 2016-11-16
US20150280018A1 (en) 2015-10-01
CN106133916B (zh) 2019-11-12
TWI675490B (zh) 2019-10-21
JP2017509153A (ja) 2017-03-30
KR20160138183A (ko) 2016-12-02
WO2015148568A1 (en) 2015-10-01
DE112015001440T5 (de) 2017-01-26
AU2019283886A1 (en) 2020-01-23
TW201611309A (zh) 2016-03-16

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Application publication date: 20200218