CN110797432A - 一种室温超短沟道硒化铂太赫兹探测器及制备方法 - Google Patents
一种室温超短沟道硒化铂太赫兹探测器及制备方法 Download PDFInfo
- Publication number
- CN110797432A CN110797432A CN201911124457.2A CN201911124457A CN110797432A CN 110797432 A CN110797432 A CN 110797432A CN 201911124457 A CN201911124457 A CN 201911124457A CN 110797432 A CN110797432 A CN 110797432A
- Authority
- CN
- China
- Prior art keywords
- layer
- metal
- platinum selenide
- terahertz
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- LFGRDRAXRZFPAB-UHFFFAOYSA-N selanylideneplatinum Chemical compound [Pt]=[Se] LFGRDRAXRZFPAB-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000001704 evaporation Methods 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims abstract description 6
- 238000000233 ultraviolet lithography Methods 0.000 claims abstract description 4
- 239000010931 gold Substances 0.000 claims description 20
- 229910052737 gold Inorganic materials 0.000 claims description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 16
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- ZNKMCMOJCDFGFT-UHFFFAOYSA-N gold titanium Chemical compound [Ti].[Au] ZNKMCMOJCDFGFT-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910001258 titanium gold Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 18
- 238000003384 imaging method Methods 0.000 abstract description 18
- 230000004044 response Effects 0.000 abstract description 12
- 230000005540 biological transmission Effects 0.000 abstract description 9
- 230000008020 evaporation Effects 0.000 abstract description 3
- 239000000969 carrier Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000012512 characterization method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000011896 sensitive detection Methods 0.000 description 2
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
本发明公开了一种室温超短沟道硒化铂太赫兹探测器及制备方法。器件结构自下而上依次为:第一层是衬底、第二层是氧化层、第三层是硒化铂以及搭在硒化铂上的非对称的蝶形天线和天线两侧的金属电极。器件制备步骤是将机械剥离的硒化铂转移到氧化层上,用紫外光刻方法和倾角蒸镀工艺制备非对称的蝶形天线和金属电极,形成硒化铂太赫兹探测器。太赫兹光照射时,赛贝克电动势驱动硒化铂内载流子定向运动,实现室温快速的太赫兹的探测。该探测器具有高速、宽频、高响应、高稳定性等优点,可以在室温下对树叶进行无电离损伤成像,也可以对封装在纸袋中的金属钥匙透射成像,为实现室温太赫兹探测器广泛应用奠定基础。
Description
技术领域
本发明涉及一种室温超短沟道硒化铂太赫兹探测器及制备方法,具体指利用倾角蒸镀法形成超短沟道和非对称金属天线结构,利用位于天线中间的超窄狭缝实现太赫兹电场增强,当太赫兹照射时,非对称的电极产生赛贝克电动势驱动载流子定向运动,产生光伏信号,实现对太赫兹辐射的室温探测,对新鲜树叶的太赫兹无损成像和对封装在信封中的金属钥匙透射成像。
背景技术
太赫兹波(Terahertz,THz)的频率通常认为位于0.1~10THz(波长3毫米~30微米)之间,处于于毫米波和红外线之间。太赫兹研究是电子学和光子学交叉的交叉学科。一直以来,高功率、稳定输出的固态太赫兹源和高速、高灵敏度的太赫兹探测器的研究困难重重,限制了太赫兹技术的发展和应用,常常被称为的THz空白(terahertz gap)。
太赫兹光子特点与应用:(a)太赫兹光子能量(特征值为4meV)低、透射性好,由于太赫兹波的光子能量很低,它穿透物质时,不容易发生电离;又因为太赫兹光子对很多非极性分子透射性好,所以可用来进行对人体的成像或者无损检测,相比较X射线检测,对生命活体的损伤的大大降低。(b)指纹谱特征,太赫兹波段与很多大分子的振动、转动的特征频率重合,所以很多物质在太赫兹波段都有明显的共振吸收峰,这种指纹谱特征可以用来进行物质检测,如毒品的检测、DNA探测等。(c)太赫兹波的时域频谱稳定性好,信噪比高于傅立叶变换红外光谱技术,这使得太赫兹波非常适用于成像应用。(d)太赫兹波段相干性好、覆盖范围广,是下一代无线通信的有利备选波段。
实现太赫兹技术的应用与突破,一个关键就是制备高速度、高灵敏度、高稳定性和室温工作的太赫兹波探测器,因此发展高效光电转化的室温探测器就成为当前太赫兹探测和太赫兹成像研究的核心课题。目前,量子阱太赫兹探测遇到了很大困难,主要是因为太赫兹的光子能量小于热扰动的能量,很容易达到饱和;在场效应晶体管中利用等离激元过阻尼振荡的方法探测效率还不够高。在商用的太赫兹波探测器中,热释电探测器的响应速度比较慢,响应时间一般是毫秒量级;热辐射计一般需要比较低的工作温度;肖特基二极管的工作频率在亚太赫兹波段并且需要十分复杂的加工工艺。
二维材料的出现为太赫兹探测提供了新的备选方案。其具有表面积大,悬挂键少、带隙可调等优势受到青睐和广泛的关注。其中,硒化铂是一种Ⅱ型狄拉克半金属材料,具有载流子迁移率大、带隙随层数变化可调、极强的稳定性和拓扑性质丰富等特点。这种材料与带有超窄狭缝的非对称蝶形天线相结合,可以实现对太赫兹电场的聚焦增强和高效耦合和转化,为新型的太赫兹探测器的研究提供了良好的平台。
发明内容
本发明提出一种室温超短沟道硒化铂太赫兹探测器及制备方法,实现了硒化铂器件在室温太赫兹灵敏探测和无损透射成像等领域的应用。上述发明将硒化铂材料和带有超窄狭缝的非对称蝶形天线(bow-tie antenna)相结合,该探测器利用位于天线中间的超窄狭缝实现太赫兹电场增强,在室温下利用非对称的金属电极产生赛贝克电动势驱动载流子定向运动,从而产生光伏信号,实现对太赫兹辐射的灵敏探测,对新鲜树叶的无损透射成像和对封装在纸袋中的金属钥匙透射成像。
本发明指一种室温超短沟道硒化铂太赫兹探测器及制备方法,所述探测器的结构自下而上为:第一层是衬底1、第二层是氧化层2、第三层是硒化铂3、以及搭在硒化铂上的铬金蝶形天线4、钛金蝶形天线7和与天线相连接的金属电极一5、金属电极二6。
所述的衬底1为高阻硅衬底,电阻率大于10000欧姆·米;
所述的氧化层2为二氧化硅;
所述的硒化铂3厚度为30-50纳米;
所述的铬金蝶形天线4,下层金属为铬,上层金属为金;
所述的金属电极一5和金属电极二6为复合金属电极,下层金属为铬,上层金属为金;
所述的钛金蝶形天线7,下层金属为钛,上层金属为金。
本发明指一种室温超短沟道硒化铂太赫兹探测器及制备方法,所述器件制备包括以下步骤:
1)通过微机械剥离方法将硒化铂3转移至氧化层2的表面;
2)采用紫外光刻技术,结合电子束蒸发及传统剥离工艺制备铬金蝶形天线4、金属电极一5和金属电极二6;
3)采用倾角蒸镀法(tilted-angle evaporation technique)在铬金蝶形天线和部分硒化铂上覆盖钛金,形成超短沟道和非对称金属天线。
本发明专利的优点在于:
1)采用高阻硅作为衬底,有效地减少低阻的硅衬底对太赫兹的反射,提高了探测器的光吸收和光电转化效率。
2)采用硒化铂作为导电沟道材料,硒化铂具有载流子迁移率高、带隙可调和高稳定性等优点,可实现宽频、高速的太赫兹探测。
3)采用带有超窄狭缝的非对称蝶形天线结构,实现太赫兹电场的聚焦增强和提高了器件的光电转化能力。
4)利用本探测器可实现在室温下对新鲜树叶的无损成像,也可以对封装在信封中的金属钥匙成像,为实现室温太赫兹探测器广泛应用提供可行的探索方案。
附图说明
图1为本发明硒化铂薄层太赫兹探测器件结构单元的侧视示意图;
图中:1衬底、2氧化层、3硒化铂、4铬金蝶形天线、5金属电极一、6金属电极二、7钛金蝶形天线。
图2为硒化铂太赫兹探测器件测试的实验装置示意图;
图3为硒化铂太赫兹探测器在室温下斩波频率1kHz,0.12THz的工作频率下响应波形图;
图4为硒化铂太赫兹探测器在室温下斩波频率1kHz,0.29THz的工作频率下响应波形图;
图5为硒化铂太赫兹探测器太赫兹波极化方向的响应图;
图6为硒化铂太赫兹探测器空气中放置半年后的响应图;
图7是硒化铂太赫兹探测器沟道硒化铂材料的拉曼响应随时间的变化图。
具体实施方式:
以下结合附图对本发明的具体实施方式作详细说明:
本发明研制了一种超超短沟道室温硒化铂太赫兹探测器。该探测器采用了带有超窄狭缝的非对称蝶形天线结构。太赫兹光照射时,赛贝克电动势驱动硒化铂内载流子定向运动,实现室温快速的太赫兹的探测。该探测器具有高速、宽频、高响应、高稳定性等优点,可以在室温下对树叶进行无电离损伤成像,也可以对封装在纸袋中的金属钥匙透射成像。
具体步骤如下:
1.衬底选择
选用高阻硅作为衬底,电阻率大于10000欧姆·米。
2.用热氧化法在衬底上制备氧化层
3.硒化铂制备和转移
用机械剥离的方法将硒化铂转移到氧化层上,硒化铂厚度30纳米到50纳米。
4.硒化铂天线和电极的制备
采用紫外光刻技术,结合电子束蒸发技术制备铬金蝶形天线和金属电极,下层金属为铬,上层金属为金;结合传统剥离工艺剥离金属膜,获得铬金天线和复合金属电极。
5.利用倾角蒸镀法在已经做好的天线上蒸镀一层钛金电极并覆盖部分硒化铂,制备钛金电极同时形成超短沟道。
6.硒化铂太赫兹探测器的光电表征和成像实验。如图3所示,这是实验室自己搭建的太赫兹光电表征和成像系统,太赫兹源是由微波源和倍频器、放大器构成,频率范围是0.02-0.3THz。将经过电磁斩波调制的太赫兹辐射通过离轴抛面镜聚焦到探测器件上,探测器件产生的光电流信号首先经过前置放大器(SR570)放大,然后输入示波器进行波形显示,同时输入给锁相放大器(SR830)进行信号提取,全过程都由计算机通过集成的软件系统进行操控。测试结果表明:
a)当硒化铂的厚度为30纳米,沟道长度为100纳米。在功率密度为1毫瓦每平方厘米的太赫兹波照射下,可实现100纳安的光电流。
b)当硒化铂的厚度为40纳米,沟道长度为100纳米。在功率密度为1毫瓦每平方厘米的太赫兹波照射下,可实现120纳安的光电流。
c)当硒化铂的厚度为50纳米,沟道长度为100纳米。在功率密度为1毫瓦每平方厘米的太赫兹波照射下,可实现200纳安的光电流。
本发明中探测器结构的参数在一定范围里变化时,硒化铂室温太赫兹波探测器都有很好的探测太赫兹波,测试结果表明,器件具有良好的偏振特性,器件的响应时间可以达到1微秒,在0.29THz时响应率可以达到200V/W,噪声等效功率低于100pW/Hz0.5,并初步实现了偏置电压下响应幅度的调控,可有效的对太赫兹波进行室温探测。器件可实现室温下对新鲜树叶清晰成像,也可以实现对封装在信封中的金属钥匙透射成像,在太赫兹探测和成像领域有广泛的应用价值。
Claims (2)
1.一种室温超短沟道硒化铂太赫兹探测器,包括衬底(1)、氧化层(2)、硒化铂(3)、铬金蝶形天线(4)、金属电极一(5)、金属电极二(6)和钛金蝶形天线(7),其特征在于:
所述探测器的结构自下而上为:第一层是衬底(1)、第二层是氧化层(2)、第三层是硒化铂(3)以及搭在硒化铂上的铬金蝶形天线(4)、钛金蝶形天线(7)和与天线相连接的金属电极一(5)和金属电极二(6);
所述衬底(1)为高阻硅衬底,电阻率大于10000欧姆·米;
所述的氧化层(2)为二氧化硅层;
所述的硒化铂(3)的厚度为30-50纳米;
所述的铬金蝶形天线(4)有两层金属层,下层金属为铬,上层金属为金;所述的金属电极一(5)和金属电极二(6)为复合金属电极,下层金属为铬,上层金属为金;
所述的钛金蝶形天线(7)有两层金属层,下层金属为钛,上层金属为金。
2.一种制备如权利要求1所述室温超短沟道硒化铂太赫兹探测器的制备方法,其特征在于包括以下步骤:
1)通过微机械剥离方法将硒化铂(3)转移至氧化层(2)的表面;
2)采用紫外光刻技术,结合电子束蒸发及传统剥离工艺在制备铬金蝶形天线(4)金属电极一(5)和金属电极二(6);
3)采用倾角蒸镀法在铬金蝶形天线和部分硒化铂上覆盖钛金,形成超短沟道和非对称的金属天线。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911124457.2A CN110797432A (zh) | 2019-11-18 | 2019-11-18 | 一种室温超短沟道硒化铂太赫兹探测器及制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911124457.2A CN110797432A (zh) | 2019-11-18 | 2019-11-18 | 一种室温超短沟道硒化铂太赫兹探测器及制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN110797432A true CN110797432A (zh) | 2020-02-14 |
Family
ID=69444952
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911124457.2A Pending CN110797432A (zh) | 2019-11-18 | 2019-11-18 | 一种室温超短沟道硒化铂太赫兹探测器及制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110797432A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113484352A (zh) * | 2021-06-23 | 2021-10-08 | 北京大学 | 基于第二类外尔半金属材料的太赫兹探测器 |
CN113823703A (zh) * | 2021-11-24 | 2021-12-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | 室温碲化铂阵列太赫兹探测器及其制备方法 |
CN114784128A (zh) * | 2022-03-25 | 2022-07-22 | 国科大杭州高等研究院 | 一种基于蝶形天线结构的拓扑增强型碲化锑太赫兹光电探测器及其制备方法 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012047595A (ja) * | 2010-08-26 | 2012-03-08 | Hiroshima Univ | テラヘルツ波検出装置 |
JP2013004717A (ja) * | 2011-06-16 | 2013-01-07 | Nippon Signal Co Ltd:The | テラヘルツ検出器 |
US20140048708A1 (en) * | 2012-08-20 | 2014-02-20 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Bolometric detector of an electromagnetic radiation in the terahertz range and array detection device comprising such detectors |
CN104167452A (zh) * | 2014-08-12 | 2014-11-26 | 南京大学 | 一种带相位光栅的超导单光子探测器及其制备方法 |
EP3035394A1 (en) * | 2014-12-17 | 2016-06-22 | Centre National de la Recherche Scientifique | Photoconductive antenna for terahertz waves, method for producing such photoconductive antenna and terahertz time domain spectroscopy system |
CN107946401A (zh) * | 2017-08-30 | 2018-04-20 | 中国科学院上海技术物理研究所 | 一种室温拓扑绝缘体太赫兹探测器及制备方法 |
CN109289877A (zh) * | 2018-10-15 | 2019-02-01 | 北京化工大学 | 一种过渡金属二硫属化物薄膜制备及光催化应用 |
CN109411562A (zh) * | 2018-10-29 | 2019-03-01 | 合肥工业大学 | 二硒化铂薄膜/n-型锗异质结近红外光探测器及其制备方法 |
CN109449242A (zh) * | 2018-11-12 | 2019-03-08 | 郑州大学 | 基于二维二硒化铂纳米薄膜与碲化镉晶体的异质结型近红外光电探测器及其制备方法 |
CN109916516A (zh) * | 2019-03-29 | 2019-06-21 | 郑州大学 | 一种二维二硒化钯纳米薄膜在宽波段偏振光信号检测中的应用 |
CN110400855A (zh) * | 2019-07-10 | 2019-11-01 | 中国科学院上海技术物理研究所 | 一种室温黑磷太赫兹探测器及其制备方法 |
-
2019
- 2019-11-18 CN CN201911124457.2A patent/CN110797432A/zh active Pending
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012047595A (ja) * | 2010-08-26 | 2012-03-08 | Hiroshima Univ | テラヘルツ波検出装置 |
JP2013004717A (ja) * | 2011-06-16 | 2013-01-07 | Nippon Signal Co Ltd:The | テラヘルツ検出器 |
US20140048708A1 (en) * | 2012-08-20 | 2014-02-20 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Bolometric detector of an electromagnetic radiation in the terahertz range and array detection device comprising such detectors |
CN104167452A (zh) * | 2014-08-12 | 2014-11-26 | 南京大学 | 一种带相位光栅的超导单光子探测器及其制备方法 |
EP3035394A1 (en) * | 2014-12-17 | 2016-06-22 | Centre National de la Recherche Scientifique | Photoconductive antenna for terahertz waves, method for producing such photoconductive antenna and terahertz time domain spectroscopy system |
CN107946401A (zh) * | 2017-08-30 | 2018-04-20 | 中国科学院上海技术物理研究所 | 一种室温拓扑绝缘体太赫兹探测器及制备方法 |
CN109289877A (zh) * | 2018-10-15 | 2019-02-01 | 北京化工大学 | 一种过渡金属二硫属化物薄膜制备及光催化应用 |
CN109411562A (zh) * | 2018-10-29 | 2019-03-01 | 合肥工业大学 | 二硒化铂薄膜/n-型锗异质结近红外光探测器及其制备方法 |
CN109449242A (zh) * | 2018-11-12 | 2019-03-08 | 郑州大学 | 基于二维二硒化铂纳米薄膜与碲化镉晶体的异质结型近红外光电探测器及其制备方法 |
CN109916516A (zh) * | 2019-03-29 | 2019-06-21 | 郑州大学 | 一种二维二硒化钯纳米薄膜在宽波段偏振光信号检测中的应用 |
CN110400855A (zh) * | 2019-07-10 | 2019-11-01 | 中国科学院上海技术物理研究所 | 一种室温黑磷太赫兹探测器及其制备方法 |
Non-Patent Citations (1)
Title |
---|
李景镇主编: "《光学手册 上》", 31 July 2010, 陕西科学技术出版社, pages: 409 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113484352A (zh) * | 2021-06-23 | 2021-10-08 | 北京大学 | 基于第二类外尔半金属材料的太赫兹探测器 |
CN113823703A (zh) * | 2021-11-24 | 2021-12-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | 室温碲化铂阵列太赫兹探测器及其制备方法 |
CN113823703B (zh) * | 2021-11-24 | 2022-03-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | 室温碲化铂阵列太赫兹探测器及其制备方法 |
CN114784128A (zh) * | 2022-03-25 | 2022-07-22 | 国科大杭州高等研究院 | 一种基于蝶形天线结构的拓扑增强型碲化锑太赫兹光电探测器及其制备方法 |
CN114784128B (zh) * | 2022-03-25 | 2024-04-02 | 国科大杭州高等研究院 | 一种基于蝶形天线结构的拓扑增强型碲化锑太赫兹光电探测器及其制备方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN207529955U (zh) | 一种室温拓扑绝缘体太赫兹探测器 | |
CN110400855B (zh) | 一种室温黑磷太赫兹探测器及其制备方法 | |
CN110797432A (zh) | 一种室温超短沟道硒化铂太赫兹探测器及制备方法 | |
CN106374006B (zh) | 一种室温可调控的亚太赫兹波探测器及制备方法 | |
Malhotra et al. | Terahertz antenna technology for imaging applications: A technical review | |
Mittendorff et al. | Ultrafast graphene-based broadband THz detector | |
CN110416349A (zh) | 一种可调控的室温石墨烯太赫兹探测器及其制备方法 | |
Sun et al. | Room temperature GaN/AlGaN self-mixing terahertz detector enhanced by resonant antennas | |
CN215418202U (zh) | 一种室温双通道可调控的太赫兹探测器 | |
US20100282967A1 (en) | High sensitivity thz signal detector and camera | |
CN210092112U (zh) | 一种可调控的室温石墨烯太赫兹探测器 | |
US20070222693A1 (en) | Multi-band terahertz receiver and imaging device | |
CN105514128A (zh) | 一种石墨烯室温太赫兹波探测器及制备方法 | |
CN210866220U (zh) | 一种室温超短沟道硒化铂太赫兹探测器 | |
Kasjoo et al. | A brief overview of detectors used for terahertz imaging systems | |
CN210272401U (zh) | 一种室温黑磷太赫兹探测器 | |
Kašalynas et al. | Terahertz imaging with bow-tie InGaAs-based diode with broken symmetry | |
CN113049096A (zh) | 室温周期对数天线集成的碲化镍太赫兹探测器及制备方法 | |
CN110828604A (zh) | 一种可调控的室温黑砷磷太赫兹探测器及制备方法 | |
Song et al. | Large area crystalline Weyl semimetal with nano Au film based micro-fold line array for THz detector | |
WO2019074441A1 (en) | PHOTODETECTOR, METHOD OF FORMING THE SAME, CONTROL METHOD THEREFOR, AND PHOTODETECTOR ARRANGEMENT | |
Shao et al. | Research progress on terahertz quantum-well photodetector and its application | |
Du et al. | Terahertz and millimetre wave imaging with a broadband Josephson detector working above 77 K | |
CN210866219U (zh) | 一种可调控的室温黑砷磷太赫兹探测器 | |
CN113484352A (zh) | 基于第二类外尔半金属材料的太赫兹探测器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |