CN207529955U - 一种室温拓扑绝缘体太赫兹探测器 - Google Patents
一种室温拓扑绝缘体太赫兹探测器 Download PDFInfo
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Abstract
本专利公开了一种室温拓扑绝缘体太赫兹探测器。器件结构自下而上依次为是衬底、氧化物层、硒化铋薄膜、对数天线和金属源漏电极。器件制备步骤是将机械剥离的具有丰富表面态硒化铋薄膜转移到衬底上，运用紫外光刻或电子束光刻的方法结合传统剥离工艺制备对数天线和金属电极作为源极和漏极，形成硒化铋薄膜场效应晶体管结构。器件在太赫兹光的照射下硒化铋薄膜表面态电子与晶格发生不对称性散射，进而实现室温快速的太赫兹的探测。该太赫兹探测器具有高速、宽频、高响应、高集成度等特点并属于光伏型探测器件，为实现室温太赫兹探测器大规模应用奠定基础。
Description
技术领域
本专利涉及一种拓扑绝缘体光电探测器件，具体指一种室温拓扑绝缘体太赫兹探测器。
背景技术
太赫兹波(Terahertz,THz)辐射是指频率在0.1～10THz(波长30微米～3毫米)之间的电磁波，其长波段方向与毫米波(亚毫米波)相重合，短波段方向与红外线相重合，属于远红外波段。由于其位于远红外和微波相互交叉的波段，长期以来缺乏相应的方法对其进行产生和探测，从而形成THz空白(terahertz gap)。
太赫兹光子特点与应用：(a)量子能量和黑体温度很低；由于太赫兹波的光子能量很低，它穿透物质时，不易发生电离，因而可用来进行安全的无损检测。
(b)许多物质的大分子，如生物大分子的振动和旋转频率都在太赫兹波段，所以太赫兹波段表现出很强的吸收和谐振，许多爆炸物有太赫兹指纹特性，这使得它们能够从衣服中及与其他材料混在一起时被鉴别出来，如毒品的检测。(c)太赫兹波的时域频谱信噪比比较高，这使得太赫兹非常适用于成像应用。其辐射强度测量的信噪比可以大于1010，远高于傅立叶变换红外光谱技术，而且其稳定性更好。(d)太赫兹波对于许多物质都具有高透性，所以它在皮肤癌的诊断和治疗、DNA探测、太赫兹成像以及药物的分析和检测等方面都显示了其强大的功能和成效。
实现太赫兹技术应用与突破，其中一个关键技术就是太赫兹波探测，需要发展具备可控半导体材料与入射光场相互作用以增强太赫兹波光电响应能力的探测器件。但是，传统的依靠量子阱子带间跃迁的方法很难实现辐射探测目的，因为太赫兹的光子能量小于热扰动的能量，很容易达到饱和。目前，应用较多的商用太赫兹波探测器包括热辐射计，但是它需要在低温条件下进行工作，肖特基二极管的工作频率小于1太赫兹，热释电探测器的响应速度很慢，因此，需要探索新的半导体材料和新功能性的器件实现太赫兹探测。而拓扑绝缘体具有丰富的表面态物理，为新型的太赫兹光电功能转换器件的研究提供了良好的平台。
发明内容
本专利提出一种室温拓扑绝缘体太赫兹探测器，实现了拓扑绝缘体场效应结构在室温太赫兹探测领域的应用。
上述专利将拓扑绝缘体引入太赫兹探测结构，该探测器结构基于场效应晶体管，在室温下利用拓扑绝缘体表面态的电子在太赫兹场的作用下与表面晶格发声不对称性散射，从而产生光伏信号，实现对太赫兹辐射的探测。
本专利指一种室温拓扑绝缘体太赫兹探测器及制备方法，其特征在于，器件结构自下而上依次为：衬底1、氧化物层2、拓扑绝缘体3、在拓扑绝缘体上层是对数周期天线4、金属源极5、金属漏极6。
其中衬底1为低掺杂的Si衬底；厚度为0.3-0.5毫米；
其中氧化物层2为SiO2层，厚度300±10纳米；
其中拓扑绝缘体3为硒化铋薄膜层。沟道长度从2微米到6微米，厚度从10纳米到60纳米；
其中对数周期天线4外径4毫米，角度为50°，下层Cr的厚度为5-15纳米，上层Au的厚度为60-80纳米。
其中金属源极5和金属漏极6为Cr和Au电极，下层Cr的厚度为5-15纳米，上层Au的厚度为60-80纳米。
本专利指一种室温拓扑绝缘体太赫兹探测器及制备方法，其特征在于器件制备包括以下步骤：
1)通过热氧化法在衬底1上制备氧化物层2；
2)通过机械剥离方法将硒化铋薄膜3转移至氧化物层2的表面；
3)采用紫外光刻技术或者电子束曝光技术，结合热蒸发及传统剥离工艺在制备对数周期天线4金属源极5和金属漏极6，形成硒化铋薄膜半导体场效应结构器件，电极为铬、金，厚度分别为5-15纳米，60-80纳米。
用太赫兹辐射照射到器件上，由于拓扑绝缘体表面晶格对称性破缺，使得表面态的电子与晶格发声不对称性的散射，从而产生光伏信号，实现对太赫兹辐射快速，高响应的探测，在源极和漏极之间加上偏压，可实现对太赫兹辐射幅度的动态调控。
本专利专利的优点在于：
1)、使用低掺杂的硅作为衬底，大大地减少高掺杂的硅表面覆盖二氧化硅衬底对太赫兹的反射，提高了硒化铋薄膜吸收率，提高器件的太赫兹响应，更便于其光电响应的的测试。
2)、采用硒化铋薄膜作为导电沟道，利用硒化铋的表面态晶格的不对称性破缺对太赫兹的散射作用，实现高频、高速、高灵敏度的太赫兹探测。
3)、集成了对数周期天线结构和引线电极欧姆接触，实现强的光场耦合能力，提高器件的集成度和小型化，为实现太赫兹探测器大规模应用奠定基础。
附图说明
图1为本专利拓扑绝缘体太赫兹探测器件结构单元的侧视示意图；
图中：1衬底、2氧化物层、3拓扑绝缘体、4对数周期天线、5金属源极、6 金属漏极。
图2为拓扑绝缘体太赫兹探测器件的结构图，其中图(a)为拓扑绝缘体太赫兹探测器件的结构俯视示意图；图(b)为图(a)的局部放大图；
图3为拓扑绝缘体太赫兹探测器件测试的实验装置示意图；
图4为拓扑绝缘体太赫兹探测器在室温下斩波频率1kHz，40G的工作频率下响应波形图；
图5为拓扑绝缘体太赫兹探测器在室温下斩波频率1kHz，140G的工作频率下响应波形图；
图6为拓扑绝缘体太赫兹探测器在室温下斩波频率1kHz，300G的工作频率下响应波形图；
具体实施方式：
以下结合附图对本专利的具体实施方式作详细说明：
本专利研制了拓扑绝缘体太赫兹探测器。通过基于场效应结构，在太赫兹辐射的照射下，拓扑绝缘体表面的电子与对称性破缺的晶格发声不对称性散射，从而产生光伏信号，实现对太赫兹辐射的探测。另外，在源极和漏极之间施加电压可实现对太赫兹辐射的动态调控。
具体步骤如下：
1.衬底选择
选用厚度为0.5毫米的低掺杂硅作为衬底。
2.氧化物介质层制备
通过热氧化法在硅衬底的表面，氧化300纳米厚度二氧化硅。
3.拓扑绝缘体转移制备
用机械剥离的方法将硒化铋薄膜转移到SiO2/Si衬底上，硒化铋薄膜长度10微米，厚度从10纳米；
4.拓扑绝缘体源漏电极的制备
采用紫外光刻技术或者电子束曝光技术，结合热蒸发技术制备对数周期结构和金属电极，铬10纳米，金60纳米；结合传统剥离工艺剥离金属膜，获得源极、漏极电极，沟道宽度为2微米。
5.将制备好的拓扑绝缘体太赫兹探测器进行光电响应测试。如图3所示，用40GHz、140GHz、300GHz的太赫兹辐射到探测器件上，探测器件产生的光电流信号通过前置放大器(SR560)放大信号，分别输入示波器，锁相放大器(SR830)，除此之外，还需要斩波器(SR430)斩波频率的参考信号分别输入示波器，锁相放大器，才能保证太赫兹响应波形保留和响应度记录。对于不同的沟道长度(2微米到6微米)以及不同的拓扑绝缘体厚度(10纳米到60纳米)的太赫兹探测器，测试过程中均显示超高响应率，具有快速探测的能力。
a)当对数周期天线结构外直径4mm、弧度40°，沟道长度为5微米的拓扑绝缘体。在太赫兹波(功率为10毫瓦，源距离探测器的距离为10厘米)的照射下，可实现8纳安的电流。
b)当对数周期天线结构外直径4mm、弧度50°，沟道长度为5微米的拓扑绝缘体。在太赫兹波(功率为10毫瓦，源距离探测器的距离为10厘米)的照射下，可实现10纳安的电流。
c)当对数周期天线结构外直径2mm、弧度50°，沟道长度为5微米的拓扑绝缘体。在太赫兹波(功率为10毫瓦，源距离探测器的距离为10厘米)的照射下，可实现6纳安的电流。
探测器结构的参数在一定范围里变化，本专利中拓扑绝缘体室温太赫兹波探测器都有很好的探测太赫兹波，测试结果表明器件信噪比超过103，并初步实现了偏置电压下响应幅度的变化，可有效的对太赫兹波进行室温探测。
结果说明本专利拓扑绝缘体室温太赫兹探测器及其制备方法，该结构器件具有高速、宽频、高响应、高集成度等特点并属于光伏型探测器件，为实现室温太赫兹探测器大规模应用奠定基础。
Claims (1)
1.一种室温拓扑绝缘体太赫兹探测器，包括衬底(1)，氧化物层(2)、拓扑绝缘体(3)、对数周期天线(4)、金属源极(5)和金属漏极(6)，其特征在于，
所述探测器的结构自下而上依次为：衬底(1)、氧化物层(2)、拓扑绝缘体(3)、在拓扑绝缘体上层是对数周期天线(4)、金属源极(5)、金属漏极(6)；其中：
所述的衬底(1)为低掺杂的Si衬底；厚度为0.3-0.5毫米；
所述的氧化物层(2)为SiO2层，厚度300±10纳米；
所述的拓扑绝缘体(3)为硒化铋薄膜层，沟道长度从2微米到6微米，厚度从10纳米到60纳米；
所述的对数周期天线(4)外径4毫米，角度为500，下层Cr的厚度为5-15纳米，上层Au的厚度为60-80纳米；
所述的金属源极(5)和金属漏极(6)为Cr和Au电极，下层Cr的厚度为5-15纳米，上层Au的厚度为60-80纳米。
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