CN110400855B - 一种室温黑磷太赫兹探测器及其制备方法 - Google Patents
一种室温黑磷太赫兹探测器及其制备方法 Download PDFInfo
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- 239000002131 composite material Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
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- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
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- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
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- 230000006870 function Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
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Abstract
本发明公开了一种室温黑磷太赫兹探测器及其制备方法。器件结构自下而上依次为:第一层是本征硅衬底、第二层是氧化物层、第三层是黑磷以及搭在黑磷上的非对称的蝴蝶形天线和天线两侧的金属电极。器件制备步骤是将机械剥离的黑磷转移到衬底上,运用紫外光刻或者电子束曝光方法结合倾角蒸镀工艺制备非对称的蝴蝶形天线和金属电极,形成黑磷太赫兹探测器。当太赫兹光照射器件时,黑磷内载流子在赛贝克电动势驱动下单向运动,产生响应信号并实现室温快速的太赫兹的探测。该探测器具有高速、宽频、高响应、高集成度等特点,可以在室温下对新鲜的树叶进行无损伤主动成像,为实现室温太赫兹探测器大规模应用奠定基础。
Description
技术领域
本发明涉及一种室温黑磷太赫兹探测器及其制备方法,具体指利用倾角蒸镀技术形成短沟道和非对称金属电极结构,利用位于天线中间的狭缝实现太赫兹电场增强,在太赫兹光照下,利用非对称的金属天线产生赛贝克电动势驱动载流子单向运动,产生光伏信号,实现对太赫兹辐射的室温探测和对新鲜树叶的太赫兹成像。
背景技术
太赫兹波(Terahertz,THz)是指频率在0.1~10THz(波长3毫米~30微米)之间的电磁波,其长波段方向是毫米波(亚毫米波),短波段方向是红外线。长期以来,由于缺乏高功率、稳定输出的太赫兹源和高速、高灵敏度的太赫兹探测器,限制了太赫兹技术的发展和广泛应用,因此形成了所谓的THz空白 (terahertz gap)。
太赫兹光子特点与应用:(a)量子能量低(特征值为4meV),由于太赫兹波的光子能量很低,它穿透物质时,不容易发生电离,因而可用来进行对人体的成像或者无损检测,克服了X射线检测对生命活体有损伤的缺点。(b)指纹谱特征,许多生物大分子的振动和转动频率都在太赫兹波段,所以对太赫兹波显示出很强的吸收和谐振,这使得它们能够被鉴别出来,如毒品的检测、DNA 探测等。(c)太赫兹波的时域频谱稳定性好,信噪比高于傅立叶变换红外光谱技术,这使得太赫兹波非常适用于成像应用。(d)太赫兹波对于许多物质都具有高透性,所以在癌症的诊断和治疗、安全检查等方面都显示了其强大的功能和成效。
实现太赫兹技术的应用与突破,一个关键技术就是实现高速度、高灵敏度、可室温工作的太赫兹波探测和成像,这就要求发展能够增强光与器件相互作用能力进而增强太赫兹波光电响应能力的室温探测器件。但是,传统的依靠量子阱子带间跃迁的方法在太赫兹探测上遇到很大困难,主要是因为太赫兹的光子能量小于热扰动的能量,很容易达到饱和;利用场效应晶体管等离激元过阻尼振荡的方法能够实现的响应率还比较低。在应用较多的商用太赫兹波探测器中,热辐射计需要在低温条件下进行工作;肖特基二极管的工作频率小于1太赫兹并且需要比较复杂的制备工艺;热释电探测器的响应速度很慢,一般在毫秒量级。因此,探索新的半导体材料和新的功能性结构来实现太赫兹探测已成为当务之急,受到广泛重视。在新材料方面,黑磷材料具有载流子迁移率大,面内各向异性,材料生长方式简易方便,拓扑性质在垂直电场作用下可调等优势;在新结构方面,带有狭缝的非对称蝴蝶形天线能够实现对太赫兹电场的增强和高效耦合。两者的结合为新型的太赫兹光电探测器的研究提供了良好的平台。
发明内容
本发明提出一种室温黑磷太赫兹探测器及其制备方法,实现了黑磷器件在室温太赫兹探测和无损成像领域的应用。
上述发明将黑磷材料和带有狭缝的非对称蝴蝶形天线(bow-tie antenna) 相结合,该探测器利用位于天线中间的狭缝实现太赫兹电场增强,在室温下利用非对称的金属电极产生赛贝克电动势驱动载流子单向运动,从而产生光伏信号,实现对太赫兹辐射的探测和对新鲜树叶的无损成像。
本发明指一种室温黑磷太赫兹探测器及其制备方法,所述探测器的结构自下而上为:第一层是本征硅衬底1、第二层是氧化层2、第三层是黑磷3、以及搭在黑磷上的铬金蝴蝶形天线4、钛金蝴蝶形天线7和与天线相连接的金属电极一5、金属电极二6。
所述的本征硅衬底1为本征的硅衬底;
所述的氧化物层2为二氧化硅;
所述的黑磷3厚度为10-30纳米;
所述的铬金蝴蝶形天线4,下层金属为铬,上层金属为金;
所述的金属电极一5和金属电极二6为复合金属电极,下层金属为铬,上层金属为金;
所述的钛金蝴蝶形天线7,下层金属为钛,上层金属为金。
本发明指一种室温黑磷太赫兹探测器及其制备方法,所述器件制备包括以下步骤:
1)通过热氧化法在本征硅衬底1上制备氧化物层2;
2)通过微机械剥离方法将黑磷3转移至氧化物层2的表面;
3)采用紫外光刻技术或者电子束曝光技术,结合热蒸发及传统剥离工艺制备铬金蝴蝶形天线4、金属电极一5和金属电极二6;
4)采用倾角蒸镀技术(tilted-angle evaporation technique)在铬金蝴蝶形天线和部分黑磷上覆盖钛金,形成短沟道和非对称金属天线。
本发明专利的优点在于:
1)采用本征的硅作为衬底,大大地减少高掺杂的硅衬底对太赫兹的反射,提高了器件的吸收率,进而提高器件的太赫兹响应率。
2)采用黑磷作为导电沟道材料,黑磷具有载流子迁移率高,面内各向异性和带隙可调等优点,可实现宽频、高速的太赫兹探测。
3)采用带有狭缝的蝴蝶形天线结构,实现太赫兹电场的增强和提高了器件的光电转化能力。
4)采用非对称的金属天线,在太赫兹光照射下产生赛贝克电动势,驱动载流子单向运动产生光电响应,实现灵敏的太赫兹探测。
5)利用本探测器可实现对新鲜树叶的无损成像,为实现室温太赫兹探测器大规模应用奠定基础。
附图说明
图1为本发明黑磷薄层太赫兹探测器件结构单元的侧视示意图;
图中:1本征硅衬底、2氧化层、3黑磷、4铬金蝴蝶形天线、5金属电极一、6金属电极二、7钛金蝴蝶形天线。
图2为黑磷太赫兹探测器件的结构俯视示意图;
图3为黑磷太赫兹探测器件测试的实验装置示意图;
图4为黑磷太赫兹探测器在室温下斩波频率1kHz,0.12THz的工作频率下响应波形图;
图5为黑磷太赫兹探测器在室温下斩波频率1kHz,0.27THz的工作频率下响应波形图;
图6为黑磷太赫兹探测器太赫兹波极化方向的响应图;
图7为黑磷太赫兹探测器在近红外光辅助探测下的响应图。
具体实施方式:
以下结合附图对本发明的具体实施方式作详细说明:
本发明研制了一种室温黑磷太赫兹探测器。该探测器采用了带有狭缝的非对称蝴蝶形天线结构。在太赫兹光的照射下,非对称电极引起的赛贝克电动势驱动载流子单向运动,从而产生光伏信号,实现对太赫兹辐射的探测和对新鲜树叶的无损成像。
具体步骤如下:
1.衬底选择
选用本征硅作为衬底。
2.氧化层制备
通过热氧化法在硅衬底的表面,氧化生成二氧化硅。
3.黑磷制备和转移
用机械剥离的方法将黑磷转移到SiO2/Si衬底上,黑磷厚度10纳米到30 纳米;
4.黑磷天线和电极的制备
采用紫外光刻技术或者电子束曝光技术,结合热蒸发技术制备铬金蝴蝶形天线和金属电极,下层金属为铬,上层金属为金;结合传统剥离工艺剥离金属膜,获得铬金天线和复合金属电极。
5.利用倾角蒸镀技术在已经做好的天线上蒸镀一层钛金电极并覆盖部分黑磷,制备钛金电极同时使器件沟道长度缩短。
6.将制备好的黑磷太赫兹探测器进行光电响应测试和成像。如图3所示,用0.02-0.3THz的太赫兹辐射通过离轴抛面镜聚焦后照射到探测器件上,探测器件产生的光电流信号通过前置放大器(SR570)放大信号,分别输入示波器,锁相放大器(SR830),除此之外,还需要斩波器(SR430)斩波频率的参考信号分别输入示波器,锁相放大器,才能保证太赫兹响应波形保留和响应度记录。测试过程中器件表现出超高响应率和快速探测的能力。
a)当黑磷的厚度为10纳米,沟道长度为70纳米。在功率密度为100微瓦每平方毫米的太赫兹波照射下,可实现50纳安的光电流。
b)当黑磷的厚度为20纳米,沟道长度为70纳米。在功率密度为100微瓦每平方毫米的太赫兹波照射下,可实现80纳安的光电流。
c)当黑磷的厚度为30纳米,沟道长度为70纳米。在功率密度为100微瓦每平方毫米的太赫兹波照射下,可实现100纳安的光电流。
本发明中探测器结构的参数在一定范围里变化时,黑磷室温太赫兹波探测器都有很好的探测太赫兹波,测试结果表明器件的响应时间可以达到0.8微秒,在0.12THz时响应率可以达到2000V/W,噪声等效功率达到10pW/Hz0.5,并初步实现了偏置电压下响应幅度的变化,可有效的对太赫兹波进行室温探测。器件可实现室温下对新鲜树叶清晰成像,在太赫兹探测和成像领域有广泛的应用价值。
Claims (2)
1.一种室温黑磷太赫兹探测器,包括本征硅衬底(1)、氧化物层(2)、黑磷(3)、铬金蝴蝶形天线(4)、金属电极一(5)、金属电极二(6)和钛金蝴蝶形天线(7),其特征在于:
所述探测器的结构自下而上为:第一层是本征硅衬底(1)、第二层是氧化层(2)、第三层是黑磷(3)以及搭在黑鳞上的铬金蝴蝶形天线(4)、钛金蝴蝶形天线(7)和与天线相连接的金属电极一(5)和金属电极二(6);
所述的氧化物层(2)为二氧化硅层;所述的钛金蝴蝶形天线(7)位于铬金蝴蝶形天线(4)和黑磷(3)上形成短沟道和非对称的金属天线;
所述的黑磷(3)的厚度为10-30纳米;
所述的铬金蝴蝶形天线(4)有两层金属层,下层金属为铬,上层金属为金;
所述的金属电极一(5)和金属电极二(6)为复合金属电极,下层金属为铬,上层金属为金;
所述的钛金蝴蝶形天线(7)有两层金属层,下层金属为钛,上层金属为金。
2.一种制备如权利要求1所述室温黑磷太赫兹探测器的制备方法,其特征在于包括以下步骤:
1)通过热氧化法在衬底(1)上制备氧化物层(2);
2)通过微机械剥离方法将黑磷(3)转移至氧化物层(2)的表面;
3)采用紫外光刻技术或者电子束曝光技术,结合热蒸发及传统剥离工艺在制备铬金蝴蝶形天线(4)金属电极一(5)和金属电极二(6);
4)采用倾角蒸镀技术在铬金蝴蝶形天线和部分黑磷上覆盖钛金,形成短沟道和非对称的金属天线。
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