CN110783425A - Method for reducing photoinduced attenuation defect of solar cell module - Google Patents
Method for reducing photoinduced attenuation defect of solar cell module Download PDFInfo
- Publication number
- CN110783425A CN110783425A CN201910923660.XA CN201910923660A CN110783425A CN 110783425 A CN110783425 A CN 110783425A CN 201910923660 A CN201910923660 A CN 201910923660A CN 110783425 A CN110783425 A CN 110783425A
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- China
- Prior art keywords
- solar cell
- cell module
- square meter
- temperature
- reducing
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 230000007547 defect Effects 0.000 title claims abstract description 10
- 238000005286 illumination Methods 0.000 claims abstract description 19
- 238000003466 welding Methods 0.000 claims abstract description 11
- 230000005540 biological transmission Effects 0.000 claims description 6
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract description 3
- 230000001678 irradiating effect Effects 0.000 abstract description 3
- 230000006798 recombination Effects 0.000 abstract description 3
- 230000008929 regeneration Effects 0.000 description 3
- 238000011069 regeneration method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for reducing photoinduced attenuation defects of a solar cell module, which comprises the step of placing the solar cell module which completes a series welding process in an equipment cavity with the temperature of 150-300 ℃ and the illumination intensity of 20 KW/square meter to 80 KW/square meter for irradiating for 5-30 s. According to the invention, the solar cell after the series welding process is placed under the specific temperature and illumination conditions for irradiation, and the defects of boron-oxygen (B-O) complexes are passivated by exciting hydrogen atoms in the cell, so that a recombination center is eliminated, and the photoelectric conversion efficiency of the cell is recovered or improved.
Description
Technical Field
The invention belongs to the field of solar cell manufacturing, and particularly relates to a method for reducing the photoinduced attenuation defect of a solar cell module.
Background
In the current production process of the solar cell module, a series welding machine welds a welding strip and a cell electrode in a series welding process in an infrared heating mode, in the process, an infrared lamp heats the whole cell, and boron and oxygen in a silicon wafer form a boron-oxygen complex due to infrared illumination on the cell, so that the service life of minority carriers is shortened, and the conversion efficiency of the cell is reduced.
Disclosure of Invention
In order to solve the above problems, the present invention provides a method for reducing the light attenuation defect of a solar cell module.
The technical purpose is achieved, the technical effect is achieved, and the invention is realized through the following technical scheme:
a method for reducing the photoinduced attenuation defect of a solar cell module comprises the step of placing the solar cell module which completes a series welding process in an equipment cavity with the temperature of 150-300 ℃ and the illumination intensity of 20 KW/square meter to 80 KW/square meter for irradiating for 5-30 s.
As a further improvement of the invention, the equipment cavity also comprises a temperature control device and a plurality of LED light sources which are arranged above the cavity at equal intervals.
As a further improvement of the present invention, the apparatus further comprises a conveying device, wherein the conveying device drives the solar cell module placed thereon to move from the inlet end to the outlet end of the apparatus cavity for a time equivalent to the time of the solar cell module being irradiated.
As a further development of the invention, the temperature is 250 ℃.
As a further improvement of the invention, the illumination intensity is 50KW per square meter.
As a further improvement of the invention, the illumination time is 15s-20 s.
The invention has the beneficial effects that: according to the invention, the solar cell after the series welding process is placed under the specific temperature and illumination conditions for irradiation, and the defects of boron-oxygen (B-O) complexes are passivated by exciting hydrogen atoms in the cell, so that a recombination center is eliminated, and the photoelectric conversion efficiency of the cell is recovered or improved.
Drawings
FIG. 1 is a schematic structural diagram of an apparatus for performing a light-induced regeneration process on a cell according to the present invention;
wherein: 1-solar cell module, 2-LED light source and 3-transmission device.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The following detailed description of the principles of the invention is provided in connection with the accompanying drawings.
The equipment structure for performing the light-induced regeneration treatment on the solar cell module 1 after the series welding process is completed as shown in fig. 1 comprises a temperature control device, a plurality of LED light sources 2 which are arranged above a cavity at equal intervals, and a transmission device 3. The temperature control equipment is used for maintaining the temperature of the cavity at a constant set temperature; the LED light source provides illumination intensity for irradiating the solar cell module; the transmission device 3 drives the solar battery assembly 1 placed on the transmission device to move from the inlet end to the outlet end of the equipment cavity, and the moving speed of the transmission device is set according to the irradiation time of the solar battery assembly 1.
The following examples use different process parameters to process the solar module 1 after the series welding process is completed:
example 1: the temperature is 150 ℃, the illumination intensity is 20 KW/square meter, and the time is 5 s;
example 2: the temperature is 150 ℃, the illumination intensity is 80 KW/square meter, and the time is 30 s;
example 3: the temperature is 150 ℃, the illumination intensity is 50 KW/square meter, and the time is 20 s;
example 4: the temperature is 250 ℃, the illumination intensity is 50 KW/square meter, and the time is 15 s;
example 5: the temperature is 250 ℃, the illumination intensity is 20 KW/square meter, and the time is 20 s;
example 6: the temperature is 300 ℃, the illumination intensity is 50 KW/square meter, and the time is 15 s;
example 7: the temperature is 300 ℃, the illumination intensity is 20 KW/square meter, and the time is 30 s;
the performance of the solar cell module after all the processes of the above different examples and the control group (without equipment treatment) were compared, and the results are shown in table one:
table one: performance comparison table of solar cell modules of different embodiments and comparison groups
| Control group | Example 1 | Example 2 | Example 3 | Example 4 | Example 5 | Example 6 | Example 7 | |
| Component power | 379.3W | 380.8W | 381.2W | 381.5W | 383.1W | 382.5W | 382.2W | 381.8W |
It can be seen from table one that after the series welding process is completed, the module power of the solar cell module after the photo-induced regeneration treatment is improved by 0.4% -1% compared with the control group, and the photoelectric conversion efficiency is obviously improved. And the power of the solar cell module obtained by processing for 15s under the conditions that the temperature is 250 ℃ and the illumination intensity is 50 KW/square meter is the maximum, which shows that the defect of a hydrogen atom passivation boron-oxygen (B-O) complex in the cell can be better excited under the process condition, and a recombination center is eliminated.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (6)
1. A method for reducing the light attenuation defect of a solar cell module is characterized in that: the method comprises the step of placing the solar cell module which finishes the series welding process in an equipment cavity with the temperature of 150-300 ℃ and the illumination intensity of 20KW per square meter to 80KW per square meter for 5-30 s.
2. The method of claim 1, wherein the method comprises: the equipment cavity also comprises temperature control equipment and a plurality of LED light sources which are arranged above the cavity at equal intervals.
3. The method of claim 1, wherein the method comprises: the equipment also comprises a transmission device, and the time for driving the solar cell module placed on the transmission device to move from the inlet end to the outlet end of the equipment cavity is equivalent to the time for the solar cell module to be irradiated.
4. The method of claim 1, wherein the method comprises: the temperature was 250 ℃.
5. The method of claim 1, wherein the method comprises: the illumination intensity is 50KW per square meter.
6. The method of claim 1, wherein the method comprises: the illumination time is 15s-20 s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910923660.XA CN110783425A (en) | 2019-09-27 | 2019-09-27 | Method for reducing photoinduced attenuation defect of solar cell module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910923660.XA CN110783425A (en) | 2019-09-27 | 2019-09-27 | Method for reducing photoinduced attenuation defect of solar cell module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110783425A true CN110783425A (en) | 2020-02-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910923660.XA Pending CN110783425A (en) | 2019-09-27 | 2019-09-27 | Method for reducing photoinduced attenuation defect of solar cell module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110783425A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204558429U (en) * | 2015-05-13 | 2015-08-12 | 浙江晶科能源有限公司 | A kind of device reducing photo attenuation |
| CN104868010A (en) * | 2015-03-03 | 2015-08-26 | 晶澳（扬州）太阳能科技有限公司 | Method for reducing light induced attenuation of P type crystalline silicon solar cells and assemblies thereof by using strong light irradiation |
| EP3246938A2 (en) * | 2016-05-16 | 2017-11-22 | Gintech Energy Corporation | Method for recovering efficacy of solar cell module and portable device thereof |
-
2019
- 2019-09-27 CN CN201910923660.XA patent/CN110783425A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104868010A (en) * | 2015-03-03 | 2015-08-26 | 晶澳（扬州）太阳能科技有限公司 | Method for reducing light induced attenuation of P type crystalline silicon solar cells and assemblies thereof by using strong light irradiation |
| CN204558429U (en) * | 2015-05-13 | 2015-08-12 | 浙江晶科能源有限公司 | A kind of device reducing photo attenuation |
| EP3246938A2 (en) * | 2016-05-16 | 2017-11-22 | Gintech Energy Corporation | Method for recovering efficacy of solar cell module and portable device thereof |
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Application publication date: 20200211 |