CN111081814B - Method and equipment for reducing carrier attenuation of solar cell piece and solar cell - Google Patents
Method and equipment for reducing carrier attenuation of solar cell piece and solar cell Download PDFInfo
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Abstract
The invention discloses a method for reducing carrier attenuation of a solar cell, which comprises the following steps: (1) the light-induced attenuation of the solar cell is reduced; (2) annealing the solar cell at the temperature of 300-600 ℃; (3) preheating the solar cell to 250-450 ℃; (4) carrying out first illumination treatment on the solar cell in a first temperature range for a first time; (5) carrying out second illumination treatment on the solar cell in a second temperature range for a second time; wherein the highest temperature of the first temperature range is more than or equal to the highest temperature of the second temperature range; the first time is less than or equal to the second time. According to the invention, through the processes of annealing, preheating, high-temperature photo-thermal treatment and low-temperature photo-thermal treatment, the carrier attenuation caused by hydrogenation attenuation and impurities is effectively reduced, and the regeneration and recovery of the H and B-O complex from an unstable state to a passivation stable state are promoted, so that the CID attenuation rate of the solar cell is effectively reduced.
Description
Technical Field
The invention relates to the field of solar cells, in particular to a method and equipment for reducing carrier attenuation of a solar cell piece and a solar cell.
Background
With the rapid development of the photovoltaic industry, the mainstream product of the solar cell is comprehensively switched to a high-efficiency PERC cell from a traditional aluminum back field cell, and the conversion efficiency is greatly improved. However, with the continuous refreshing of cell efficiency, the quality and reliability requirements of high-efficiency solar cell modules are becoming more and more strict, and Carrier Induced Degradation (CID) has become one of the key issues restricting the development of the photovoltaic industry.
CID refers to the power decay phenomenon caused by solar cells and components during carrier injection. There is currently no consensus regarding the mechanism of this carrier-induced decay, and no relevant monitoring standards have been established and implemented. The CID mechanism currently proposed in the photovoltaic industry includes several reasons: 1) light Induced attenuation (LID): the power attenuation caused by the battery in the illumination process is generally considered in the industry that LID is mainly caused by boron-oxygen complex and ferroboron, and the boron-oxygen defect state theory is relatively mature. The attenuation can reach 3-7%, and some attenuation can even reach 10%; 2) photothermal attenuation (LeTID: light and elongated Temperature Induced Degradation): the power attenuation of the battery under the conditions of high temperature and illumination can reach about 10 percent; 3) hydrogen Induced Degradation (HID), Hydrogen bonds of passivated impurities and defect parts are easily damaged due to high temperature and illumination, Hydrogen enters a silicon wafer body, and excessive Hydrogen induces to form a composite center to cause Degradation; 4) according to the theory of metal dissolution and dispersion, metal precipitates are dispersed to form interstitial metal ions in the process of high-temperature quick firing, and metal atoms can activate impurities to cause attenuation.
In the prior art, much attention is focused on the study on the LID attenuation, for example, patent CN105552173B provides a method for reducing the photoinduced attenuation of a B-doped crystalline silicon solar cell, and the LID is effectively reduced by adopting different light intensities to carry out illumination processing on a silicon wafer for different times at different temperatures; for another example, patent CN109616555A provides a method for improving the light decay resistance of a solar cell, which injects decreasing current into the cell sheet at different temperatures to reduce the LID to 0.9%.
However, attenuation by LeTID, HID, and metallic impurities is not the same as LID; the LID test temperature is relatively low and does not adequately expose the risk of high temperature degradation of the PERC cell. The inventor finds out through tests that: after the conventional silicon wafer is subjected to LID attenuation treatment, although LID attenuation is reduced to about 1%, CID is still about 2-4%, and it can be seen that CID cannot be effectively reduced by adopting the conventional LID treatment mode. Therefore, how to sufficiently reduce CID degradation of a solar cell is an urgent problem to be solved in the industry.
Disclosure of Invention
The invention aims to provide a method for reducing the carrier attenuation of a solar cell piece, which can effectively reduce the CID attenuation of the solar cell and improve the efficiency and the reliability of the cell.
The invention also aims to provide a device for reducing the carrier attenuation of the solar cell.
The invention also provides a solar cell with high conversion efficiency and high reliability.
In order to solve the above technical problem, the present invention provides a method for reducing carrier attenuation of a solar cell, which includes:
(1) the light-induced attenuation of the solar cell is reduced;
(2) annealing the solar cell at the temperature of 300-600 ℃;
(3) preheating the annealed solar cell to 250-450 ℃;
(4) carrying out first illumination treatment on the solar cell in a first temperature range for a first time;
(5) carrying out second illumination treatment on the solar cell in a second temperature range for a second time;
wherein the highest temperature of the first temperature range is more than or equal to the highest temperature of the second temperature range;
the first time is less than or equal to the second time.
As an improvement of the technical scheme, the step (2) comprises the following steps:
(2.1) heating the solar cell to 300-600 ℃ at the speed of 10-40 ℃/s, wherein the heating time is 5-60 s;
(2.2) insulating the solar cell piece at the temperature of 300-600 ℃ for 2-60 s;
(2.3) cooling the solar cell piece to below 60 ℃ at the speed of 2-10 ℃/s, wherein the cooling time is 5-90 s.
As an improvement of the technical scheme, the step (2) comprises the following steps:
(2.1) heating the solar cell to 350-450 ℃ at the speed of 10-30 ℃/s, wherein the heating time is 10-20 s;
(2.2) insulating the solar cell piece at the temperature of 350-450 ℃ for 3-10 s;
and (2.3) cooling the solar cell to room temperature at the speed of 2-10 ℃/s, wherein the cooling time is 40-90 s.
As an improvement of the technical scheme, in the step (3), the heating rate is 30-45 ℃/s, and the preheating time is 5-60 s.
As an improvement of the technical proposal, in the step (3), the preheating temperature is 300-370 ℃, the heating rate is 30-45 ℃/s, and the preheating time is 8-12 s.
As an improvement of the above technical solution, in the step (4), the illumination intensity range of the first illumination process is 2 × 104-7×104W/m2The first temperature range is 250-450 ℃, and the first time is 5-60 s;
in the step (5), the illumination intensity range of the second illumination treatment is 2 × 104-7×104W/m2The second temperature range is 150-300 ℃, and the second time is 5-60 s.
As an improvement of the above technical solution, in the step (4), the illumination intensity range of the first illumination process is 2 × 104-5×104W/m2The first temperature range is 300-350 ℃, and the first time is 5-10 s;
in the step (5), the illumination intensity range of the second illumination treatment is 2 × 104-5×104W/m2The second temperature range is 200-300 ℃, and the second time is 20-35 s.
Correspondingly, the invention also discloses equipment for reducing the carrier attenuation of the solar cell piece, which comprises a conveying belt for conveying the solar cell piece, and a thermal annealing device and a photo-thermal treatment device which are sequentially arranged on the conveying belt;
the photo-thermal treatment device comprises a first preheating area, a first illumination area and a second illumination area which are sequentially arranged along the conveyor belt; the first illumination area has a first temperature range, and the illumination time is a first time; the second illumination area has a second temperature range, and the illumination time is a second time;
the highest temperature of the first temperature range is more than or equal to the highest temperature of the second temperature range;
the first time is less than or equal to the second time.
As an improvement of the technical scheme, the thermal annealing device comprises a second preheating zone, a heat preservation zone and a cooling zone which are sequentially arranged along the conveyor belt.
Correspondingly, the invention also discloses a solar cell which is obtained by processing the solar cell by the method.
The implementation of the invention has the following beneficial effects:
the invention provides a method for reducing the carrier attenuation of a solar cell, which comprises the following steps of thermal annealing, preheating, high-temperature photo-thermal treatment and low-temperature photo-thermal treatment; the thermal annealing process can effectively activate H and metal impurities in the solar cell, discharge ineffective H, precipitate the metal impurities and effectively reduce hydrogen induced attenuation and CID attenuation caused by the metal impurities. The preheating process can effectively activate H and B-O complexes in the solar cell; the high-temperature and low-temperature photo-thermal treatment steps can effectively promote the regeneration and recovery of the H and B-O complex from an unstable state to a passivation stable state, thereby effectively reducing the CID decay rate of the solar cell.
Meanwhile, the invention also provides equipment for reducing the carrier attenuation of the solar cell, which can be embedded into the existing production line and is suitable for large-scale industrial production.
Drawings
Fig. 1 is a flow chart of a method for reducing carrier attenuation of a solar cell piece according to the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings. It is only noted that the invention is intended to be limited to the specific forms set forth herein, including any reference to the drawings, as well as any other specific forms of embodiments of the invention.
The conventional method for reducing Light Induced Degradation (LID) cannot effectively reduce Carrier Induced Degradation (CID), and reduces efficiency and reliability of the solar cell. To this end, the present invention provides a method for reducing carrier attenuation of a solar cell, referring to fig. 1, which comprises the following steps:
s1: the light-induced attenuation of the solar cell is reduced;
specifically, one or a combination of electrical injection, photo-thermal regeneration, annealing and the like can be used to reduce the light-induced attenuation of the solar cell, but the method is not limited to the above method. In particular, the light induced attenuation (LID) of solar cells can be reduced using methods such as those in ZL201610091453.9 or ZL 201811542505.5.
It should be noted that carrier attenuation (CID) is different from light attenuation (LID). The generation mechanism and the test method of the two are different. As for the generation mechanism, the current academia has clear understanding on the generation mechanism of LID — mainly boron-oxygen pair and boron-iron pair defects in silicon materials; however, there is no clear conclusion about the mechanism of CID generation, and there is no clear conclusion about the relationship between LID and CID. The test conditions are also different between the two methods. The LID test conditions were: 1) the illumination intensity is 1000 +/-50W; 2) the light attenuation is set to be 5kW & h or 30kW & h; 3) the sample temperature was adjusted to 60-70 ℃. The test conditions for CID are: the solar cell was placed in a closed dark room at 110 ℃ and treated for 8h under continuous forward current energization at 0.5A. Although the difference between the two is large, it is certain that both LID and CID have a great influence on the performance of the solar cell, and both need to be processed. However, in the conventional literature, processing of LIDs is often focused on, and processing of CIDs is often ignored. The inventor finds that LID is reduced to about 1% after LID treatment, but CID can still reach 2-4%. Therefore, the invention also carries out the following steps:
s2: annealing the solar cell at the temperature of 300-600 ℃;
specifically, S2 includes:
s21: heating the solar cell to 300-600 ℃ at the speed of 10-40 ℃/s, wherein the heating time is 5-60 s;
specifically, the rapid temperature rise may activate H and metal impurities in the solar cell.
Preferably, the temperature of the solar cell is raised to 350-450 ℃ at the speed of 10-30 ℃/s, and the temperature raising time is 10-20 s. Under this condition, the inactive H and the metal impurities in the solar cell can be effectively activated.
S22: the solar cell is subjected to heat preservation for 2-60s at the temperature of 300-600 ℃;
the heat preservation is carried out at a higher temperature (300-+、H-And H0And can also effectively prolong the diffusion length of various H, ensure that invalid H can be discharged out of the solar cell, and prevent excessive H from capturing H again after high temperature and carrier injection-Resulting in higher CID attenuation. In addition, the heat preservation at higher temperature can promote the activation and aggregation of impurities such as Cu, Fe, Ni and the like in the silicon chip, and is convenient for the precipitation treatment at the later stage.
Preferably, the solar cell is subjected to heat preservation at the temperature of 350-450 ℃ for 3-10 s. If the processing time is longer than 10s, the effective H in the solar cell is also discharged, so that the H passivation in the solar cell is insufficient, and the cell conversion efficiency is reduced.
S23: and cooling the solar cell piece to below 60 ℃ at the speed of 2-10 ℃/s, wherein the cooling time is 5-90 s.
By reducing the temperature, the activated metal impurities can be converted into a precipitate form, and CID attenuation caused by the metal is reduced. The high temperature makes the metal atoms migrate to the normal crystal lattice, and when the cooling rate is more than 10 ℃/s, the metal atoms are easy to form high-electric activity point defects, so that the minority carrier lifetime of the material is reduced, namely the CID attenuation is improved.
Preferably, the temperature reduction rate is 2-10 ℃/s, the temperature reduction time is 30-90s, and the temperature is reduced to room temperature. Further preferably, the cooling rate is 2-5 ℃/s, and the cooling time is 40-90 s.
S3: preheating the annealed solar cell to 250-450 ℃;
the thermal annealing process discharges a large amount of invalid H, and can also cause the discharge of valid H in the solar cell, so that the passivation in the solar cell is insufficient. For this purpose, preheating is used to activate H in the dielectric film into the interior of the solar cell. Meanwhile, preheating can also promote the B-O complex to be converted into an annealing state, and the B-O complex is converted into a re-ecological state after being treated by high-temperature illumination in the subsequent process, so that the CID can be fully treated.
Wherein the preheating temperature is 250-450 ℃, the preheating temperature-rise rate is 30-45 ℃/s, and the preheating time is 5-60 s; preferably, the preheating temperature is 300-370 ℃, the preheating temperature-rising rate is 30-45 ℃/s, and the preheating time is 8-12 s. Under the preheating condition, the diffusion length of H can be effectively controlled, and effective H in the dielectric film is prevented from being discharged out of the solar cell in large quantity; meanwhile, the sufficient diffusion length of H can be ensured, and the H can be in full contact with the B-O complex.
Preferably, the preheating is performed in a nitrogen atmosphere to prevent the introduction of O into the wafer and the formation of more B-O defects.
S4: carrying out first illumination treatment on the solar cell in a first temperature range for a first time;
wherein the illumination intensity range of the first illumination treatment is 2 × 104-7×104W/m2The first temperature range is 250-450 ℃, and the first time is 5-60 s. Preferably, the illumination intensity of the first illumination treatment is in the range of 2 × 104-5×104W/m2The first temperature range is 300-350 ℃, and the first time is 5-10 s.
Under the treatment conditions, the B-O complex is converted from an annealed state to a re-ecological state under the passivation of H, and H can passivate dislocation lattice defects inside the solar cell. When the temperature is higher than 450 ℃, part of B-O composite can be converted into a destabilization state from an annealing state, and the treatment effect is weakened. When the temperature is less than 250 ℃, the H moving speed in the battery piece is slow and can not be effectively combined with the B-O complex.
Further, the inventors found through research that when the light intensity is higher than 5 × 104W/m2Or less than 2X 104W/m2The treatment effect is deteriorated; the treatment effect is also poor when the temperature is > 350 ℃ or < 300 ℃. The inventors guess that the light intensity is 2 × 104-5×104W/m2At the same time, when the temperature is 300-350 ℃, the H discharged from the dielectric film will be changed from H+Towards H-And H0And (4) transformation. Wherein H-B-O composite centers can be effectively passivated; meanwhile, in the temperature range, the moving speed of various H is high, and the H can be effectively combined with B-O. The conversion and movement process of H as described above can be well controlled by controlling the temperature, the intensity of light irradiation and the processing time.
Further, in the above step, the temperature is controlled to be within a range, and during the treatment process, the temperature can be controlled to be changed in an ascending way or in a descending way; preferably, the temperature is controlled to decrease from the peak temperature at a rate of 5-10 ℃/s.
S5: carrying out second illumination treatment on the solar cell in a second temperature range for a second time;
wherein the second light treatment has light intensity in the range of 2 × 104-7×104W/m2The second temperature range is 150-300 ℃, and the second time is 5-60 s. Preferably, the second light treatment has a light intensity range of 2 × 104-5×104W/m2The second temperature range is 200-300 ℃, and the second time is 20-35 s. Under the above treatment conditions, the B-O complex is sufficiently transformed.
In the first light irradiation treatment process, higher temperature is mainly adopted, the main function of the first light irradiation treatment process is to promote the state conversion and movement of H, however, the excessive temperature can also cause the B-O recombination center to be converted into an unsteady state from an annealing state; therefore, the invention arranges the second illumination treatment, and the illumination treatment is carried out at lower temperature, thereby effectively promoting the full transformation of B-O center and achieving the effect of fully reducing CID.
In addition, continued high temperature processing can also allow H to escape from the solar cell to the surface, reducing effective passivation of the interior. Therefore, the diffusion length of H can be effectively shortened by performing the light treatment in the second temperature range (200-300 ℃) with lower temperature, and the passivation effect is ensured.
Further, in the above step, the temperature is controlled to be within a range, and during the treatment process, the temperature can be controlled to be changed in an ascending way or in a descending way; preferably, the temperature is controlled to decrease from the peak temperature at a rate of 1-20 ℃/s. Preferably, the temperature is reduced from the peak temperature at a rate of 1-5 deg.C/s.
Correspondingly, the invention also discloses equipment for reducing the carrier attenuation of the solar cell piece, which comprises a conveying belt for conveying the solar cell piece, and at least one group of thermal annealing devices and at least one group of photo-thermal treatment devices which are sequentially arranged on the conveying belt; the thermal annealing device and the photo-thermal treatment device are arranged at intervals.
The thermal annealing device comprises a second preheating zone, a heat preservation zone and a cooling zone which are sequentially arranged along the conveyor belt. The photothermal treatment device comprises a first preheating zone, a first illumination zone and a second illumination zone which are sequentially arranged along the conveyor belt; the first illumination area has a first temperature range, and the illumination time is a first time; the second illumination area has a second temperature range, and the illumination time is a second time; the highest temperature of the first temperature range is more than or equal to the highest temperature of the second temperature range; the first time is less than or equal to the second time.
Correspondingly, the invention also discloses a solar cell which is obtained by processing through the method. Preferably, the solar cell is a B-doped monocrystalline silicon PERC solar cell.
The invention is further illustrated by the following specific examples:
example 1
The embodiment provides a method for reducing carrier attenuation of a solar cell, which specifically comprises the following steps:
(1) the light-induced attenuation of the solar cell is reduced;
specifically, the method of ZL201811542505.5 is adopted to reduce the light-induced attenuation of the solar cell; after this step, LID was 0.9%; CID is 2.3%;
(2) annealing the solar cell at 350 ℃;
specifically, the method comprises the following steps:
(2.1) heating the solar cell to 350 ℃ at the speed of 33 ℃/s, wherein the heating time is 10 s;
(2.2) keeping the temperature at 350 ℃ for 4 s;
and (2.3) cooling the solar cell to 50 ℃ at the speed of 10 ℃/s, wherein the cooling time is 30 s.
(3) Preheating a solar cell to 350 ℃;
wherein the heating rate is 30 ℃/s, and the preheating time is 10 s;
(4) carrying out first illumination treatment on the solar cell in a first temperature range for a first time;
wherein the first temperature range is 300-330 ℃; the first illumination treatment had an illumination intensity of 3X 104W/m2The first time is 5 s;
(5) carrying out second illumination treatment on the solar cell in a second temperature range for a second time;
wherein the second temperature range is 150-180 deg.C, and the illumination intensity of the second illumination treatment is 5 × 104W/m2And the second time is 35 s.
Example 2
The embodiment provides a method for reducing carrier attenuation of a solar cell, which specifically comprises the following steps:
(1) the light-induced attenuation of the solar cell is reduced;
specifically, the method of ZL201610091453.9 is adopted to reduce the light-induced attenuation of the solar cell; after this step, LID was 1.1%; CID is 3.5%;
(2) annealing the solar cell at 400 ℃;
specifically, the method comprises the following steps:
(2.1) heating the solar cell to 400 ℃ at the speed of 25 ℃/s, wherein the heating time is 15 s;
(2.2) keeping the temperature at 400 ℃ for 5 s;
(2.3) cooling the solar cell to 58 ℃ at the speed of 6 ℃/s, wherein the cooling time is 57 s.
(3) Preheating a solar cell to 340 ℃;
wherein the heating rate is 40 ℃/s, and the preheating time is 7 s;
(4) carrying out first illumination treatment on the solar cell in a first temperature range for a first time;
wherein the first temperature range is 320-350 deg.C, and the first light irradiation treatment has a light irradiation intensity of 3 × 104W/m2The first time is 6 s; wherein, during the treatment, the temperature is raised at a rate of 5 ℃/s.
(5) Carrying out second illumination treatment on the solar cell in a second temperature range for a second time;
wherein the second temperature range is 220-260 deg.C, and the illumination intensity of the second illumination treatment is 4 × 104W/m2And the second time is 35 s. Wherein, in the treatment process, the temperature is reduced at the speed of 1.14 ℃/s.
Example 3
The embodiment provides a method for reducing carrier attenuation of a solar cell, which specifically comprises the following steps:
(1) the light-induced attenuation of the solar cell is reduced;
specifically, the method of ZL201610091453.9 is adopted to reduce the light-induced attenuation of the solar cell; after this step, LID was 1.1%; CID is 3.5%;
(2) annealing the solar cell at 400 ℃;
specifically, the method comprises the following steps:
(2.1) heating the solar cell to 400 ℃ at the speed of 25 ℃/s, wherein the heating time is 15 s;
(2.2) keeping the temperature at 400 ℃ for 5 s;
and (2.3) cooling the solar cell to 30 ℃ at the speed of 5 ℃/s, wherein the cooling time is 74 s.
(3) Preheating a solar cell to 340 ℃;
wherein the heating rate is 40 ℃/s, and the preheating time is 7 s;
(4) carrying out first illumination treatment on the solar cell in a first temperature range for a first time;
wherein the first temperature range is 320-350 deg.C, and the first light irradiation treatment has a light irradiation intensity of 3 × 104W/m2The first time is 6 s; wherein, during the treatment, the temperature is raised at a rate of 5 ℃/s.
(5) Carrying out second illumination treatment on the solar cell in a second temperature range for a second time;
wherein the second temperature range is 220-260 deg.C, and the illumination intensity of the second illumination treatment is 4 × 104W/m2And the second time is 35 s. Wherein, in the treatment process, the temperature is reduced at the speed of 1.14 ℃/s.
Example 4
The embodiment provides a method for reducing carrier attenuation of a solar cell, which specifically comprises the following steps:
(1) the light-induced attenuation of the solar cell is reduced;
specifically, the method of ZL201610091453.9 is adopted to reduce the light-induced attenuation of the solar cell; after this step, LID was 1.1%; CID is 3.5%;
(2) annealing the solar cell at 400 ℃;
specifically, the method comprises the following steps:
(2.1) heating the solar cell to 400 ℃ at the speed of 25 ℃/s, wherein the heating time is 15 s;
(2.2) keeping the temperature at 400 ℃ for 5 s;
and (2.3) cooling the solar cell to 30 ℃ at the speed of 5 ℃/s, wherein the cooling time is 74 s.
(3) Preheating a solar cell to 340 ℃;
wherein the heating rate is 40 ℃/s, and the preheating time is 7 s;
(4) carrying out first illumination treatment on the solar cell in a first temperature range for a first time;
wherein the first temperature range is 320-350 deg.C, and the first light irradiation treatment has a light irradiation intensity of 3 × 104W/m2The first time is 6 s; wherein, in the treatment process, the temperature is reduced at the speed of 5 ℃/s.
(5) Carrying out second illumination treatment on the solar cell in a second temperature range for a second time;
the second temperature range is 220-260 deg.C, and the illumination intensity of the second illumination treatment is 4 × 104W/m2And the second time is 35 s. Wherein, in the treatment process, the temperature is reduced at the speed of 1.14 ℃/s.
Comparative example 1
The comparative example provides a method for reducing carrier attenuation of a solar cell piece, and the method specifically comprises the following steps:
(1) the light-induced attenuation of the solar cell is reduced;
specifically, the method of ZL201610091453.9 is adopted to reduce the light-induced attenuation of the solar cell; after this step, LID was 1.1%; CID is 3.5%;
(2) the solar cell was subjected to a primary treatment using the method of ZL 201610091453.9.
Comparative example 2
The comparative example provides a method for reducing carrier attenuation of a solar cell piece, and the method specifically comprises the following steps:
(1) the light-induced attenuation of the solar cell is reduced;
specifically, the method of ZL201610091453.9 is adopted to reduce the light-induced attenuation of the solar cell; after this step, LID was 1.1%; CID is 3.5%;
(2) annealing the solar cell at 400 ℃;
specifically, the method comprises the following steps:
(2.1) heating the solar cell to 400 ℃ at the speed of 25 ℃/s, wherein the heating time is 15 s;
(2.2) keeping the temperature at 400 ℃ for 5 s;
and (2.3) cooling the solar cell to 30 ℃ at the speed of 5 ℃/s, wherein the cooling time is 74 s.
(3) The solar cell was subjected to a primary treatment using the method of ZL 201610091453.9.
The solar cell sheets of examples 1 to 4 and comparative examples 1 to 2 were tested, and the results were as follows:
| example 1 | Example 2 | Example 3 | Example 4 | Comparative example 1 | Comparative example 2 | |
| LID | 0.48％ | 0.58％ | 0.58％ | 0.44％ | 0.9％ | 0.88％ |
| CID | 1.44％ | 1.76％ | 1.63％ | 1.27％ | 3.4％ | 2.9％ |
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (9)
1. A method for reducing carrier attenuation in a solar cell, comprising:
(1) the light-induced attenuation of the solar cell is reduced;
(2) annealing the solar cell at the temperature of 300-600 ℃;
(3) preheating the annealed solar cell to 250-450 ℃;
(4) carrying out first illumination treatment on the solar cell in a first temperature range for a first time;
(5) carrying out second illumination treatment on the solar cell in a second temperature range for a second time;
wherein the highest temperature of the first temperature range is more than or equal to the highest temperature of the second temperature range;
the first time is less than or equal to the second time:
wherein, step (2) includes:
(2.1) heating the solar cell to 300-600 ℃ at the speed of 10-40 ℃/s, wherein the heating time is 5-60 s;
(2.2) insulating the solar cell piece at the temperature of 300-600 ℃ for 2-60 s;
(2.3) cooling the solar cell piece to below 60 ℃ at the speed of 2-10 ℃/s, wherein the cooling time is 5-90 s.
2. The method for reducing carrier decay of a solar cell sheet as claimed in claim 1, wherein the step (2) comprises:
(2.1) heating the solar cell to 350-450 ℃ at the speed of 10-30 ℃/s, wherein the heating time is 10-20 s;
(2.2) insulating the solar cell piece at the temperature of 350-450 ℃ for 3-10 s;
and (2.3) cooling the solar cell to room temperature at the speed of 2-10 ℃/s, wherein the cooling time is 40-90 s.
3. The method for reducing the carrier decay of the solar cell piece as claimed in claim 1, wherein in the step (3), the temperature rise rate is 30-45 ℃/s, and the preheating time is 5-60 s.
4. The method as claimed in claim 3, wherein the preheating temperature is 300-370 ℃, the temperature-increasing rate is 30-45 ℃/s, and the preheating time is 8-12s in step (3).
5. The method for reducing the carrier attenuation of the solar cell slice as claimed in claim 1, wherein in the step (4), the illumination intensity of the first illumination treatment is in the range of 2 x 104-7×104W/m2The first temperature range is 250-450 ℃, and the first time is 5-60 s;
in the step (5), the illumination intensity range of the second illumination treatment is 2 × 104-7×104W/m2The second temperature range is 150-300 ℃, and the second time is 5-60 s.
6. The method for reducing the carrier attenuation of the solar cell slice as claimed in claim 5, wherein in the step (4), the illumination intensity of the first illumination treatment is in the range of 2 x 104-5×104W/m2The first temperature range is 300-350 ℃, and the first time is 5-10 s;
in the step (5), the illumination intensity range of the second illumination treatment is 2 × 104-5×104W/m2The second temperature range is 200-300 ℃, and the second time is 20-35 s.
7. The equipment for reducing the carrier attenuation of the solar cell is characterized by comprising a conveying belt for conveying the solar cell, and a thermal annealing device and a photo-thermal treatment device which are sequentially arranged on the conveying belt;
the photo-thermal treatment device comprises a first preheating area, a first illumination area and a second illumination area which are sequentially arranged along the conveyor belt; the first illumination area has a first temperature range, and the illumination time is a first time; the second illumination area has a second temperature range, and the illumination time is a second time;
the highest temperature of the first temperature range is more than or equal to the highest temperature of the second temperature range;
the first time is less than or equal to the second time;
the method for processing the solar cell by the thermal annealing device comprises the following steps:
(1) heating the solar cell to 300-600 ℃ at the speed of 10-40 ℃/s, wherein the heating time is 5-60 s;
(2) the solar cell is subjected to heat preservation for 2-60s at the temperature of 300-600 ℃;
(3) and cooling the solar cell piece to below 60 ℃ at the speed of 2-10 ℃/s, wherein the cooling time is 5-90 s.
8. The apparatus according to claim 7, wherein the thermal annealing device comprises a second preheating zone, a soaking zone and a cooling zone arranged in sequence along the conveyor.
9. A solar cell, characterized in that it is obtained by treatment according to any one of claims 1 to 6.
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| CN113241390A (en) * | 2021-04-28 | 2021-08-10 | 天津爱旭太阳能科技有限公司 | Light injection method and system for crystalline silicon solar cell and cell |
| CN113555464B (en) * | 2021-05-31 | 2023-03-10 | 天津爱旭太阳能科技有限公司 | Crystalline silicon solar cell preparation method for inhibiting carrier injection attenuation |
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