CN110770884A - 由两个器件和位于其间的焊料构成的稳固的夹层配置的制造方法 - Google Patents
由两个器件和位于其间的焊料构成的稳固的夹层配置的制造方法 Download PDFInfo
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- CN110770884A CN110770884A CN201880039838.8A CN201880039838A CN110770884A CN 110770884 A CN110770884 A CN 110770884A CN 201880039838 A CN201880039838 A CN 201880039838A CN 110770884 A CN110770884 A CN 110770884A
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- solder
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- 229910000679 solder Inorganic materials 0.000 title claims abstract description 110
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000003825 pressing Methods 0.000 claims abstract description 17
- 238000002844 melting Methods 0.000 claims abstract description 15
- 230000008018 melting Effects 0.000 claims abstract description 15
- 238000007731 hot pressing Methods 0.000 claims abstract description 12
- 239000011229 interlayer Substances 0.000 claims abstract description 4
- 238000007711 solidification Methods 0.000 claims abstract description 4
- 230000008023 solidification Effects 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 239000011888 foil Substances 0.000 claims description 2
- 238000001816 cooling Methods 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 239000011135 tin Substances 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- -1 SnBi Inorganic materials 0.000 description 2
- 229910006913 SnSb Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910007637 SnAg Inorganic materials 0.000 description 1
- 229910008433 SnCU Inorganic materials 0.000 description 1
- 229910007116 SnPb Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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Abstract
一种制造由两个器件和位于其间的焊料构成的稳固的夹层配置的方法,包括以下步骤:(1)提供两个分别具有至少一个接触面的器件和一个自由的焊料预形体,(2)通过使所述器件(i)各自的一个接触面或者(ii)各自唯一的接触面或者(iii)其中一个器件的接触面中的一个以及另一器件的唯一接触面与所述自由焊料预形体的接触面发生接触,制造由所述器件和布置在这些器件之间且尚未连接的焊料预形体构成的夹层配置,以及(3)在形成稳固的夹层配置的情况下,在比焊料预形体的焊料金属的以℃表示的熔化温度低10至40%的温度下对在步骤(2)中制造的夹层配置进行热压。所述两个器件中的每一个均可选自由衬底、有源器件和无源器件组成的群组。压制压力和压制持续时间的组合可处于一个范围内,其引起具有初始自由度的焊料预形体的初始厚度的<10%的减小。所述方法可以包括以下额外的步骤:(4)将所述稳固的夹层配置加热至高于所述将两个器件连接的焊料连接的焊料金属的熔化温度的温度,以及(5)在形成所述器件之间的焊接连接的情况下,将所述夹层配置冷却至低于位于器件之间的熔化焊料金属的凝固温度以下。
Description
本发明涉及一种制造由两个器件和位于其间的焊料构成的稳固的夹层配置的方法。
在此使用的表述“由两个器件和位于其间的焊料构成的稳固的夹层配置”,简称“稳固的夹层配置”是指,两个器件在位于器件之间的焊料的协助下以>0.1MPa的抗剪强度相互附着;换言之,其具有>0.1MPa的描述相互附着强度的抗剪强度。抗剪强度可以借助常见的剪切测试仪来测定。
US 4,659,006揭示过:作为在半导体芯片与衬底之间建立焊接连接的方法的分步骤,通过热压来将衬底与自由焊料预形体连接。在将衬底与焊料预形体连接时,首先使得衬底与焊料预形体相互接触,随后再将其共同加热至一个低于焊料预形体的熔化温度的温度。在这个温度起作用期间,对焊料预形体施加压制压力。在此过程中将焊料预形体的初始厚度减小至少40%。随后以常见的方式将如此获得的由配设有焊料沉积物的衬底构成的配置与半导体芯片焊接在一起。
该案有意地将器件的焊料连接与焊接连接加以区分。焊料连接与焊接连接二者均会引起器件的导热、导电及机械连接,而焊料连接与焊接连接的区别在于:与形成器件间的焊料连接不同,焊料金属在形成焊接连接时会熔化并重新凝固,换言之,被加热至熔化温度以上再冷却至其凝固温度以下。
申请人自己意外地发现,通过在一个处理步骤中进行热压,便能建立器件之间、例如半导体芯片与衬底之间的焊料连接。
本发明涉及一种制造由两个器件和位于其间的焊料(即将这两个器件导热、导电和机械连接的焊料)构成的稳固的夹层配置的方法。所述方法包括以下步骤:
(1)提供两个分别具有至少一个接触面的器件和一个自由的焊料预形体,
(2)通过使所述器件(i)各自的一个接触面或者(ii)各自唯一的接触面或者(iii)其中一个器件的接触面中的一个以及另一器件的唯一接触面与所述自由焊料预形体的接触面发生接触,制造由所述器件和布置在这些器件之间且尚未连接的焊料预形体构成的夹层配置,以及
(3)在形成稳固的夹层配置的情况下,在比焊料预形体的焊料金属的以℃表示的熔化温度低10至40%的温度下对在步骤(2)中制造的夹层配置进行热压。
在所述方法的步骤(1)中提供两个分别具有至少一个接触面的器件和一个自由的焊料预形体。
本发明中的器件这一概念优选包括单个部件。这些单个部件优选无法进一步分解。
器件的接触面通常是金属的,例如形式为金属化层。器件或确切言之其接触面的金属可以是纯净的金属,或者是由>50至<100wt%的金属与相应地>0至<50wt%的至少另一金属构成的合金。纯净金属或确切言之合金主金属的示例为锡、铜、银、金、镍、钯和铂,特别是为锡、铜、银、金、钯和铂。
在步骤(2)中在制造所述夹层配置时使用的器件接触面可以具有处于1至3000mm2、特别是>10至1000mm2、尤其15至500mm2的范围内的尺寸。
本发明中的器件可以是衬底或者有源或无源器件。特别是为应用在电子装置中的构件。
衬底例如指IMS衬底(insulated metal-Substrate,绝缘金属衬底)、DCB衬底(direct copper bonded-Substrate,直接铜接合衬底)、AMB衬底(active metal braze-Substrate,活性金属焊接衬底)、陶瓷衬底、PCB(printed circuit board,印制电路板)和引线框。
有源器件例如指二极管、LED(light emitting diodes,发光二极管)、裸片(半导体芯片)、IGBT(insulated-gate bipolar transistors,绝缘栅双极晶体管)、IC(integrated circuits,集成电路)和MOSFET(metal-oxide-semiconductor field-effecttransistors,金属氧化物半导体场效应晶体管)。
无源器件例如指传感器、底板、冷却体、电阻器、电容器、变压器、扼流器和线圈。
这两个在步骤(1)中提供的器件可以是同一类型的,即二者例如可以均为衬底,也可以均为有源或无源器件,或者一个有源和一个无源器件。但也可以采用以下方案:一个器件是衬底,另一器件是有源或无源器件。例如可以区分出下列情形:
第一器件: | 另一器件: |
衬底 | 衬底 |
有源器件 | 无源器件 |
无源器件 | 有源器件 |
有源器件 | 有源器件 |
无源器件 | 无源器件 |
衬底 | 有源器件 |
衬底 | 无源器件 |
无源器件 | 衬底 |
有源器件 | 衬底 |
除所述具有至少一个接触面的器件以外,在所述方法的步骤(1)中提供自由的、即离散的焊料预形体。
本发明中的自由焊料预形体特别是指形式为扁平成形件的焊料金属,例如焊料金属膜、焊料金属带或者焊料金属薄片。这类自由焊料预形体具有离散的接触面,即相互独立并且可区分的接触面,特别是两个设于彼此相对的侧上的接触面。接触面的形状可以是任意的,例如为圆形、六角形、三角形,优选为矩形。尺寸和形状优选对应所述器件的接触面的尺寸和形状。所述自由焊料预形体的厚度例如可以处于10至500μm或者50至300μm的范围内。
所述焊料预形体的焊料金属(焊料)通常指铟、铟合金,或者特别是为锡或者富含锡的合金。富含锡的合金的示例为锡比例例如处于90至99.5wt%(重量百分比)的范围内的合金。合金金属例如指铜、银、铟、锗、镍、铅、铋和锑。所述合金可以含铅或者无铅。无铅合金例如可以选自由SnAg、SnBi、SnSb、SnAgCu、SnCu、SnSb、InSnCd、InBiSn、InSn、BiSnAg或SnAgCuBiSbNi构成的群组。含铅合金例如可以选自包括SnPb和SnPbAg的群组。所述焊料金属的熔化温度例如可以处于140至380℃、特别是170至300℃的范围内。
在本发明的方法的步骤(2)中,或是(i)通过使所述器件的接触面中的一个分别与所述自由焊料预形体的接触面发生接触,或是(ii)通过使所述器件各自唯一的接触面与自由焊料预形体的接触面发生接触,或是(iii)通过使其中一个器件的接触面中的一个以及另一器件的唯一接触面与自由焊料预形体的接触面发生接触,制造由所述器件和布置在这些器件之间且尚未连接的焊料预形体构成的夹层配置。
例如可以通过将自由焊料预形体以其接触面中的一个朝向其中一个器件的相关接触面,且其另一接触面朝向另一器件的相关接触面的方式安放来引发接触。一般而言,安放自由焊料预形体表示将其铺设至其中一个器件上,随后再将尚且缺少的器件铺设至该焊料预形体上。作为铺设的替代方案,也可以采用装配。
在一个实施方式中,可以在相应的待相互接触的接触面之间使用由固定剂组成构成的固定剂,或确切言之,在使接触面相互接触前,将固定剂施涂至相应接触面中的一个或两个上。
在本发明的方法的步骤(3)中,对在步骤(2)中制造的夹层配置进行热压,其中器件与焊料预形体连接成一个稳固的夹层配置。在此情形下形成器件之间的焊料连接。
例如可以将常见的热压机用作生产工具。
在比焊料预形体的焊料金属的以℃表示的熔化温度低10至40%的温度下进行热压。具体而言,所述焊料金属的熔化温度例如可以处于140至380℃的范围内,且温度在热压期间例如处于84至342℃的范围内。
在本发明的方法的一个优选实施方式中,在热压期间起作用的压制压力和压制持续时间的组合可以处于一个范围内,其引起具有初始自由度的焊料预形体(即焊料预形体处于其初始的自由状态下)的≤10%的初始厚度减小。根据在步骤(1)中提供的具有初始自由度的焊料预形体的初始厚度,所述≤10%的厚度减小例如可以处于0至50μm的范围内。
在比焊料预形体的焊料金属的以℃表示的熔化温度低10至40%的温度下使具有初始自由度的焊料预形体的初始厚度减小≤10%的压制压力与压制持续时间组合例如可以处于10至200MPa以及1秒至5分钟的范围内。选择的压制压力越高,可选择的压制持续时间便越短,反之亦然。
本发明的方法在与本文开篇述及的US 4,659,006所揭示的热压条件相比温和得多的热压条件下实施。以根据本发明形成的稳固夹层配置的形式,实现器件与具有初始自由度的焊料预形体的足够稳固的连接。
如前文所述,在原本的方法实施方面,也在形式为由两个器件和位于其间的焊料构成的稳固夹层配置的直接方法产物方面,本发明的方法具有各种优点。
本发明的方法能够借助结构相对简单的热压机实施。
本发明的方法也可以借助比本文开篇述及的US 4,659,006所揭示的器件更加压敏的器件实施。
在实施方式中,本发明的方法,或确切言之为热压,甚至可以在无特殊预防措施的情况下在正常环境气氛中实施,即在空气中实施,即既不需要在惰性气体中,也不需要在诸如惰性气体/氢气氛围的还原性氛围中实施。
在本发明的根据优选实施方式的方法完成后将器件连接的原焊料预形体(即根据本发明的方法的优选实施方式制造的焊料连接)的特征不仅在于相比具有初始自由度的焊料预形体的初始厚度减小≤10%的厚度,也在于在热压结束后与原本相比大体不变的形状和表面尺寸。据此,大体不出现位于将器件连接的焊料的外缘上的突出部,这就电子领域中不断发展的微型化而言是有利的,且器件密度随之增大。举例而言,原本为矩形的自由焊料预形体即使是在与器件连接的形式中也大体保持矩形,具有大体笔直的、即大体不弯曲的外缘。在本段落中多次使用的表述“大体”是基于肉眼观察。
在步骤(3)结束后,获得稳固的夹层配置,其由以下构成:两个在步骤(1)中提供的器件,以及位于其之间的将两个器件导热、导电和机械连接的焊料。这个焊料是焊料连接。
所述稳固的夹层连接具有至少确保运输能力(例如在至进一步处理的途中)的强度,甚至具有更高的、不需要随后的焊接(再焊接)的强度。就此而言,优选地或必要地,或仅期望在步骤(3)结束后跟随有经典的焊接操作。就已为本领域技术人员所知,故而不需要详细阐释的经典焊接而言,在本发明的方法后跟随有下列步骤:
(4)将所述稳固的夹层配置加热至高于所述将两个器件连接的焊料连接的焊料金属的熔化温度的温度,以及
(5)在形成所述器件之间的焊接连接的情况下,将所述夹层配置冷却至低于位于器件之间的熔化焊料金属的凝固温度以下。
步骤(4)是焊接。
在步骤(5)结束后,获得稳固的夹层配置,其由以下构成:两个在步骤(1)中提供的器件,以及位于其之间的将两个器件导热、导电和机械连接的焊料。这个焊料是焊接连接。
本发明的实例1
将焊料预形体(Sn3.5Ag;熔化温度221℃;9mm×9mm×0.20mm),并且与其精确匹配地将Si芯片(SKCD 81 C 060I3)居中地铺设至DCB衬底(铝氧化物陶瓷,25mm×25mm×380μm,两侧在正方形面上配设有300μm铜)的铜表面上,并将如此获得的夹层配置送入热压机(Boschmann公司的Sinterstar Innovate F-XL)的两个被预热至150℃的板件之间。在为时60秒的时间段内,将100MPa的压制压力施加至试样。
借助MITUTOYO ABSOLUTE数显测量表对原焊料预形体的厚度减小进行测定。
借助Nordson公司的DAGE 4000plus剪切测试仪在0.3mm/s的速度下在20℃下对试样的抗剪强度进行测量。
类似于实例1,实施实例2至14。
下表显示了热压期间压制温度、压制持续时间或压制压力的影响。
Claims (9)
1.一种制造由两个器件和位于其间的焊料构成的稳固的夹层配置的方法,包括以下步骤:
(1)提供两个分别具有至少一个接触面的器件和一个自由的焊料预形体,
(2)通过使所述器件(i)各自的一个接触面或者(ii)各自唯一的接触面或者(iii)其中一个器件的接触面中的一个以及另一器件的唯一接触面与所述自由焊料预形体的接触面发生接触,制造由所述器件和布置在这些器件之间且尚未连接的焊料预形体构成的夹层配置,以及
(3)在形成稳固的夹层配置的情况下,在比焊料预形体的焊料金属的以℃表示的熔化温度低10至40%的温度下对在步骤(2)中制造的夹层配置进行热压。
2.根据权利要求1所述的方法,其中所述两个器件中的每一个均选自由衬底、有源器件和无源器件组成的群组。
3.根据权利要求1或2所述的方法,其中所述自由的焊料预形体为焊料金属膜、焊料金属带或者焊料金属薄片。
4.根据上述权利要求中任一项所述的方法,其中所述自由的焊料预形体的厚度为10至500μm。
5.根据上述权利要求中任一项所述的方法,其中所述自由的焊料预形体的焊料金属的熔化温度处于140至380℃的范围内。
6.根据上述权利要求中任一项所述的方法,其中所述自由的焊料预形体的焊料金属的熔化温度处于140至380℃的范围内,以及,在热压期间的温度处于84至342℃的范围内。
7.根据上述权利要求中任一项所述的方法,其中所述压制压力和压制持续时间的组合处于一个范围内,其引起具有初始自由度的焊料预形体的初始厚度的≤10%的减小。
8.根据权利要求7所述的方法,其中所述压制压力处于10至200MPa的范围内,以及,压制持续时间处于1秒至5分钟的范围内。
9.根据上述权利要求中任一项所述的方法,包括以下额外的步骤:
(4)将所述稳固的夹层配置加热至高于所述将两个器件连接的焊料连接的焊料金属的熔化温度的温度,以及
(5)在形成所述器件之间的焊接连接的情况下,将所述夹层配置冷却至低于位于器件之间的熔化焊料金属的凝固温度以下。
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PCT/EP2018/079563 WO2019115081A1 (de) | 2017-12-13 | 2018-10-29 | Verfahren zur herstellung einer festen sandwichanordnung aus zwei bauelementen mit dazwischen befindlichem lot |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3883946A (en) * | 1971-06-17 | 1975-05-20 | Philips Corp | Methods of securing a semiconductor body to a substrate |
US5950908A (en) * | 1995-12-25 | 1999-09-14 | Mitsubishi Denki Kabushiki Kaisha | Solder supplying method, solder supplying apparatus and soldering method |
JP2002001520A (ja) * | 2000-06-16 | 2002-01-08 | Uchihashi Estec Co Ltd | はんだ付け方法及びはんだ付け構造 |
CN1507023A (zh) * | 2002-11-14 | 2004-06-23 | ���ǵ�����ʽ���� | 倒装芯片半导体器件的侧面焊接方法 |
US20090116205A1 (en) * | 2007-11-01 | 2009-05-07 | Panasonic Corporation | Mounted structure |
JP2014154688A (ja) * | 2013-02-07 | 2014-08-25 | Denso Corp | 半導体装置およびその製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4659006A (en) | 1985-09-26 | 1987-04-21 | Rca Corporation | Method of bonding a die to a substrate |
DE102013213135B3 (de) * | 2013-07-04 | 2014-08-28 | Infineon Technologies Ag | Verfahren zum Weichlöten von Halbleiterchips auf Substrate und Verfahren zum Herstellen eines Leistungshalbleitermoduls |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3883946A (en) * | 1971-06-17 | 1975-05-20 | Philips Corp | Methods of securing a semiconductor body to a substrate |
US5950908A (en) * | 1995-12-25 | 1999-09-14 | Mitsubishi Denki Kabushiki Kaisha | Solder supplying method, solder supplying apparatus and soldering method |
JP2002001520A (ja) * | 2000-06-16 | 2002-01-08 | Uchihashi Estec Co Ltd | はんだ付け方法及びはんだ付け構造 |
CN1507023A (zh) * | 2002-11-14 | 2004-06-23 | ���ǵ�����ʽ���� | 倒装芯片半导体器件的侧面焊接方法 |
US20090116205A1 (en) * | 2007-11-01 | 2009-05-07 | Panasonic Corporation | Mounted structure |
JP2014154688A (ja) * | 2013-02-07 | 2014-08-25 | Denso Corp | 半導体装置およびその製造方法 |
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US11081465B2 (en) | 2021-08-03 |
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