CN110760793A - 沉积掩膜 - Google Patents

沉积掩膜 Download PDF

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Publication number
CN110760793A
CN110760793A CN201911112607.8A CN201911112607A CN110760793A CN 110760793 A CN110760793 A CN 110760793A CN 201911112607 A CN201911112607 A CN 201911112607A CN 110760793 A CN110760793 A CN 110760793A
Authority
CN
China
Prior art keywords
hole
deposition
metal plate
deposition mask
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201911112607.8A
Other languages
English (en)
Chinese (zh)
Inventor
卢健镐
曹守铉
黄周炫
金南昊
李相范
林正龙
韩太勋
文炳律
朴宰奭
孙晓源
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=57144656&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN110760793(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from KR1020150058346A external-priority patent/KR102528582B1/ko
Priority claimed from KR1020150062137A external-priority patent/KR102590892B1/ko
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN110760793A publication Critical patent/CN110760793A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
CN201911112607.8A 2015-04-24 2015-08-25 沉积掩膜 Pending CN110760793A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR10-2015-0058346 2015-04-24
KR1020150058346A KR102528582B1 (ko) 2015-04-24 2015-04-24 금속기판 및 이를 이용한 증착용마스크
KR10-2015-0062137 2015-04-30
KR1020150062137A KR102590892B1 (ko) 2015-04-30 2015-04-30 증착용마스크
CN201580080724.4A CN107709601B (zh) 2015-04-24 2015-08-25 金属基板和使用该金属基板的沉积掩膜

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201580080724.4A Division CN107709601B (zh) 2015-04-24 2015-08-25 金属基板和使用该金属基板的沉积掩膜

Publications (1)

Publication Number Publication Date
CN110760793A true CN110760793A (zh) 2020-02-07

Family

ID=57144656

Family Applications (3)

Application Number Title Priority Date Filing Date
CN201911112607.8A Pending CN110760793A (zh) 2015-04-24 2015-08-25 沉积掩膜
CN201580080724.4A Active CN107709601B (zh) 2015-04-24 2015-08-25 金属基板和使用该金属基板的沉积掩膜
CN201911112620.3A Active CN110923622B (zh) 2015-04-24 2015-08-25 沉积掩膜

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN201580080724.4A Active CN107709601B (zh) 2015-04-24 2015-08-25 金属基板和使用该金属基板的沉积掩膜
CN201911112620.3A Active CN110923622B (zh) 2015-04-24 2015-08-25 沉积掩膜

Country Status (4)

Country Link
EP (2) EP3288097B1 (cg-RX-API-DMAC10.html)
JP (3) JP7075214B2 (cg-RX-API-DMAC10.html)
CN (3) CN110760793A (cg-RX-API-DMAC10.html)
WO (1) WO2016171337A1 (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117364235A (zh) * 2023-12-07 2024-01-09 度亘核芯光电技术(苏州)有限公司 选区外延生长方法及其中使用的掩膜结构

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KR102330373B1 (ko) * 2017-03-14 2021-11-23 엘지이노텍 주식회사 금속판, 증착용 마스크 및 이의 제조방법
CN119465022A (zh) * 2017-09-07 2025-02-18 Lg伊诺特有限公司 金属材料oled沉积掩模
KR20190059742A (ko) * 2017-11-23 2019-05-31 엘지이노텍 주식회사 증착용 마스크 및 이의 제조 방법
CN117156932A (zh) * 2018-07-12 2023-12-01 Lg伊诺特有限公司 用于oled像素蒸镀的金属板材料的蒸镀用掩模
KR102661470B1 (ko) * 2018-09-03 2024-04-29 삼성디스플레이 주식회사 증착 마스크 및 그 제조방법
KR102642138B1 (ko) * 2018-09-04 2024-03-04 엘지이노텍 주식회사 증착용 마스크 및 이의 제조 방법
KR102776431B1 (ko) * 2018-11-19 2025-03-07 엘지이노텍 주식회사 합금 금속판 및 이를 포함하는 증착용 마스크
EP3886195B1 (en) * 2018-11-19 2025-04-09 LG Innotek Co., Ltd. Deposition mask including an alloy metal plate
CN116312250A (zh) 2019-01-11 2023-06-23 Lg伊诺特有限公司 显示基板
CN213708465U (zh) * 2019-10-04 2021-07-16 凸版印刷株式会社 蒸镀掩模
KR20220073143A (ko) * 2020-11-26 2022-06-03 엘지이노텍 주식회사 Oled 화소 증착을 위한 증착용 마스크
KR20240030154A (ko) * 2022-08-30 2024-03-07 엘지이노텍 주식회사 Oled 화소 증착을 위한 증착용 마스크
TWI867383B (zh) * 2022-12-07 2024-12-21 達運精密工業股份有限公司 金屬遮罩的製造方法及其金屬遮罩

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Publication number Priority date Publication date Assignee Title
US20070275497A1 (en) * 2006-05-24 2007-11-29 Kwack Jin-Ho Method of aligning a substrate, mask to be aligned with the same, and flat panel display apparatus using the same
CN103205677A (zh) * 2012-01-16 2013-07-17 昆山允升吉光电科技有限公司 蒸镀用沟槽掩模板的制备方法
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117364235A (zh) * 2023-12-07 2024-01-09 度亘核芯光电技术(苏州)有限公司 选区外延生长方法及其中使用的掩膜结构
CN117364235B (zh) * 2023-12-07 2024-03-26 度亘核芯光电技术(苏州)有限公司 选区外延生长方法及其中使用的掩膜结构

Also Published As

Publication number Publication date
JP7577701B2 (ja) 2024-11-05
CN110923622B (zh) 2021-12-03
EP3288097B1 (en) 2024-10-23
EP3993075A1 (en) 2022-05-04
EP3288097A1 (en) 2018-02-28
CN107709601A (zh) 2018-02-16
CN110923622A (zh) 2020-03-27
EP3288097A4 (en) 2019-05-15
JP2018513918A (ja) 2018-05-31
WO2016171337A1 (ko) 2016-10-27
CN107709601B (zh) 2019-12-13
JP2022068330A (ja) 2022-05-09
JP7075214B2 (ja) 2022-05-25
JP2025013942A (ja) 2025-01-28

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Application publication date: 20200207