CN110718631A - Preparation method of low-energy-consumption and high-reliability biological memristor - Google Patents
Preparation method of low-energy-consumption and high-reliability biological memristor Download PDFInfo
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- CN110718631A CN110718631A CN201910968428.8A CN201910968428A CN110718631A CN 110718631 A CN110718631 A CN 110718631A CN 201910968428 A CN201910968428 A CN 201910968428A CN 110718631 A CN110718631 A CN 110718631A
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- 238000005265 energy consumption Methods 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 235000006508 Nelumbo nucifera Nutrition 0.000 claims abstract description 39
- 240000002853 Nelumbo nucifera Species 0.000 claims abstract description 39
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052802 copper Inorganic materials 0.000 claims abstract description 32
- 239000010949 copper Substances 0.000 claims abstract description 32
- 239000002033 PVDF binder Substances 0.000 claims abstract description 23
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims abstract description 23
- 239000000843 powder Substances 0.000 claims abstract description 19
- 230000008878 coupling Effects 0.000 claims abstract description 17
- 238000010168 coupling process Methods 0.000 claims abstract description 17
- 238000005859 coupling reaction Methods 0.000 claims abstract description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052709 silver Inorganic materials 0.000 claims abstract description 15
- 239000004332 silver Substances 0.000 claims abstract description 15
- 239000000084 colloidal system Substances 0.000 claims abstract description 12
- 238000001035 drying Methods 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 12
- BAZAXWOYCMUHIX-UHFFFAOYSA-M sodium perchlorate Chemical compound [Na+].[O-]Cl(=O)(=O)=O BAZAXWOYCMUHIX-UHFFFAOYSA-M 0.000 claims abstract description 11
- 229910001488 sodium perchlorate Inorganic materials 0.000 claims abstract description 11
- 229920002472 Starch Polymers 0.000 claims abstract description 9
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 235000019698 starch Nutrition 0.000 claims abstract description 9
- 239000008107 starch Substances 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 238000002156 mixing Methods 0.000 claims abstract description 7
- 238000001914 filtration Methods 0.000 claims abstract description 6
- 238000003756 stirring Methods 0.000 claims abstract description 6
- 238000004528 spin coating Methods 0.000 claims description 4
- 230000015654 memory Effects 0.000 abstract description 24
- 238000000034 method Methods 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 9
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 238000003860 storage Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 102000004169 proteins and genes Human genes 0.000 description 3
- 108090000623 proteins and genes Proteins 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- 238000003763 carbonization Methods 0.000 description 2
- 238000004925 denaturation Methods 0.000 description 2
- 230000036425 denaturation Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 230000003446 memory effect Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920001661 Chitosan Polymers 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/50—Bistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/761—Biomolecules or bio-macromolecules, e.g. proteins, chlorophyl, lipids or enzymes
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Abstract
A preparation method of a low-energy-consumption and high-reliability biological memristor comprises the following steps: A. ultrasonically cleaning the lotus root blocks, crushing the lotus root blocks into powder, and filtering the powder by using a filter screen to obtain fine lotus root powder; B. ultrasonically cleaning a copper sheet with the thickness of 0.02-0.05mm, and drying for later use; C. stirring and mixing 1-2 parts by mass of sodium perchlorate solution of polyvinylidene fluoride with the concentration of 25-50% and 7-10 parts by mass of fine lotus root starch to prepare a lotus root material colloid; D. coating the lotus root material colloid in the step C on the red copper sheet in the step B in a rotating mode at the rotating speed of 2000-; E. and D, drying the red copper sheet, and depositing a layer of silver on the surface of the coupling dielectric layer in a vacuum manner to obtain the biological memristor with the silver electrode/coupling dielectric layer/copper electrode structure. The biological memristor prepared by the method has the advantages of low amplitude of trigger voltage pulse, low energy consumption, small heat productivity and stable memristor effect; the memristor memory manufactured by the method is stable and reliable.
Description
Technical Field
The invention relates to a preparation method of a memristor for manufacturing a memory.
Background
The memory is an indispensable electronic element in the 21 st century, and plays an important role in development of the whole world as a huge information pool of human society. With the rapid development of economic society and the great development of artificial intelligence, the development and utilization of higher-performance memories are more and more urgent. The market share of NAND flash and DRAM has increased by 10% by 2017, its value has reached $ 853 billion, and its demand in the future is enormous.
However, the conventional semiconductor memory mainly including NAND flash and DRAM has a short service life, is difficult to degrade, wastes resources, and imposes a large burden on the environment. Therefore, development of a memory having environmental friendliness, stable performance, low power consumption, and a small size is urgently required. Research shows that an inorganic material insulating layer in the middle of a storage unit of a memory is changed into a biological organic material dielectric layer to manufacture a memristor with a memristive effect, and then the memristor is used as the storage unit and a peripheral circuit to manufacture the memristive memory. The biological organic material is easy to obtain, low in cost and biodegradable, so that the memristor type memory has less pollution to the environment, and the prospect is attractive.
In summary, memristive-type memories made based on biological memristors are ideal alternatives to traditional memories. The biological memristor is formed based on resistance state memory (resistance memory effect), the basic structure of the biological memristor is similar to that of a magnetic storage unit of a common magnetic memory, and the biological memristor is of an upper electrode/middle layer/lower electrode three-layer structure, but the middle layer is changed into an organic biological material dielectric layer from an inorganic material insulating layer. The working principle of the biological memristor as a storage unit of the memory is as follows: the method comprises the following steps that negative voltage pulses with certain amplitudes from positive to negative are applied to upper and lower electrodes of a metal conductor of a memristor, and the resistance of the biological memristor is in a high-resistance state with high resistance; on the contrary, when a positive voltage pulse with a certain amplitude from negative to positive is applied, the resistance of the biological memristor is in a low resistance state with low resistance; after the voltage application is stopped (namely, the current stops), the resistance state (resistance value) before the stop is always kept unchanged (called memristive effect); if the high resistance value is "0" and the low resistance value is "1", writing of "0" is realized by applying a negative voltage, and writing of "1" is realized by applying a reverse voltage. During reading, applying constant bias voltage, and reading out the stored information according to the resistance state expressed by the memristor under the bias voltage; if the resistance state is a high resistance value, the read information is "0", otherwise, the read information is "1". Thereby enabling the storage of information.
At present, a biological memristor which takes protein as a dielectric layer and can be used as a storage unit is successfully prepared; and a starch layer is doped with chitosan to serve as a dielectric layer to prepare the biological memristor capable of serving as a storage unit. However, the amplitude of the trigger (circulating) voltage pulse of the existing biological memristor is about 6V, the power consumption is large, the energy consumption is high, and further the heat productivity of the biological memristor is large, the memristor effect is unstable, and the stability and the reliability of the memory are poor; when the heat is serious, protein denaturation or starch carbonization can be caused, and the whole memristive memory is damaged.
Disclosure of Invention
The invention aims to provide a preparation method of a low-energy-consumption and high-reliability biological memristor, and the biological memristor prepared by the method has the advantages of low amplitude of trigger voltage pulse, low energy consumption, small heat productivity and stable memristor effect; the memristor memory manufactured by the method has low energy consumption and stable and reliable performance.
The invention aims to realize the technical scheme that a preparation method of a low-energy-consumption and high-reliability biological memristor comprises the following steps:
A. ultrasonically cleaning lotus root blocks, crushing the lotus root blocks into powder by using a crusher, and filtering the powder by using a filter screen of 1000-1600 meshes to obtain fine lotus root powder;
B. ultrasonically cleaning a copper sheet with the thickness of 0.02-0.05mm, and drying for later use;
C. stirring and mixing 1-2 parts by mass of a sodium perchlorate solution of polyvinylidene fluoride (PVDF) and 7-10 parts by mass of fine lotus root starch to prepare a lotus root material colloid; wherein the mass concentration of the sodium perchlorate solution of polyvinylidene fluoride (PVDF) is 25 to 50 percent;
D. spin-coating the lotus root material colloid obtained in the step C on the red copper sheet obtained in the step B at the rotating speed of 2000-5000 revolutions per minute; forming a coupling dielectric layer on the red copper sheet;
E. and D, naturally drying the red copper sheet obtained in the step D, and then depositing a layer of silver on the surface of the coupling dielectric layer in a vacuum manner to obtain the biological memristor with the silver electrode/coupling dielectric layer/copper electrode structure.
Compared with the prior art, the invention has the beneficial effects that:
the method comprises the steps of mixing superfine lotus root powder with polyvinylidene fluoride (PVDF), successfully forming a lotus root dielectric layer on a red copper sheet, and successfully preparing the biological memristor with a silver electrode/lotus root dielectric layer/copper electrode structure by depositing a layer of silver in vacuum. The amplitude of the trigger voltage pulse of the biological memristor is only about 4V, the power consumption is small, the energy consumption is low, the heat productivity of the memristor is small, and the memristor effect is stable; the damage of the memristor caused by serious heating, protein denaturation or starch carbonization is avoided; the memristor type memory made by taking the memory unit as a memory unit and adding a peripheral circuit has the advantages of low energy consumption, stable and reliable performance and long service life.
The invention is described in further detail below with reference to the figures and the detailed description.
Drawings
FIG. 1 is a memristive characteristic diagram (current-voltage (I-V) diagram in the forward and reverse voltage range of-4V to 4V) of a biological memristor of example 1 of the present disclosure.
FIG. 2 is a resistance curve diagram of the high and low resistance states of the biological memristor of embodiment 1 of the present invention under different cycle numbers.
Detailed Description
Example 1
The invention relates to a specific implementation mode of a low-energy-consumption and high-reliability preparation method of a biological memristor, which comprises the following steps of:
A. ultrasonically cleaning lotus root blocks, crushing the lotus root blocks into powder by using a crusher, and filtering the powder by using a filter screen of 1000-1600 meshes to obtain fine lotus root powder;
B. carrying out ultrasonic cleaning and drying on a copper sheet with the thickness of 0.02mm for later use;
C. stirring and mixing 1.5 parts by mass of a sodium perchlorate solution of polyvinylidene fluoride (PVDF) and 8 parts by mass of fine lotus root starch to prepare a lotus root material colloid; wherein the mass concentration of the sodium perchlorate solution of polyvinylidene fluoride (PVDF) is 40 percent;
D. spin-coating the lotus root material colloid obtained in the step C on the red copper sheet obtained in the step B at the rotating speed of 2000 revolutions per minute; forming a coupling dielectric layer on the red copper sheet;
E. and D, naturally drying the red copper sheet obtained in the step D, and then depositing a layer of silver on the surface of the coupling dielectric layer in a vacuum manner to obtain the biological memristor with the silver electrode/coupling dielectric layer/copper electrode structure.
FIG. 1 is a memristive characteristic diagram (current-voltage (I-V) diagram in the forward and reverse voltage range of-4V to 4V) of the biological memristor prepared in the present example. In the test, the copper electrode is used as the lower electrode, the silver electrode is used as the upper electrode, the current of the voltage in the positive and negative variation process from-4V to 4V is measured, and the following can be known from FIG. 1: the forward I-V curve obtained in the forward variation process from-4V to 4V is not overlapped with the reverse I-V curve obtained in the reverse variation process from 4V to-4V, and the forward I-V curve is always positioned on the reverse I-V curve; namely, the resistance of the prepared biological memristor is not only related to the magnitude of the voltage, but also related to the change direction of the changed voltage; under the positive voltage pulse, the high resistance state is high; the low resistance state with low resistance is obtained under the reverse voltage pulse; the result shows that the biological memristor prepared by the embodiment has a resistance memory effect.
FIG. 2 is a resistance curve diagram of the high-low resistance state of the biological memristor prepared in the present example under different cycle times. In the figure, the upper curve is a resistance curve of a high resistance state, the lower curve is a resistance curve of a low resistance state, and the bias voltage when reading the resistance value is-0.775V. As can be seen from fig. 2, the resistance value of the high resistance state of the memristor is above 1.2 megaohms, while the resistance value of the low resistance state is around 0.07 megaohms; the ratio of the resistance values of the high and low resistance states can reach 17.
Therefore, the biological memristor prepared by the method has a good memristive effect, and the cycle trigger voltage of the memristor is only 4V; and the ratio of the resistance values of the high and low resistance states is as high as 17. The memristive effect is remarkable, and the memristive effect is kept stable in the process of hundreds of voltage cycles. The memory resistance type memory can be manufactured by taking the memory cell as a storage unit and adding a peripheral circuit, and the manufactured memory resistance type memory is stable and reliable in performance and long in service life.
Example 2
The invention relates to a specific implementation mode of a low-energy-consumption and high-reliability preparation method of a biological memristor, which comprises the following steps of:
A. ultrasonically cleaning lotus root blocks, crushing the lotus root blocks into powder by using a crusher, and filtering the powder by using a filter screen of 1000-1600 meshes to obtain fine lotus root powder;
B. carrying out ultrasonic cleaning and drying on a copper sheet with the thickness of 0.04mm for later use;
C. stirring and mixing 1 part by mass of polyvinylidene fluoride (PVDF) sodium perchlorate solution and 10 parts by mass of fine lotus root starch to prepare a lotus root material colloid; wherein the mass concentration of the sodium perchlorate solution of polyvinylidene fluoride (PVDF) is 25 percent;
D. spin-coating the lotus root material colloid obtained in the step C on the red copper sheet obtained in the step B at the rotating speed of 5000 revolutions per minute; forming a coupling dielectric layer on the red copper sheet;
E. and D, naturally drying the red copper sheet obtained in the step D, and then depositing a layer of silver on the surface of the coupling dielectric layer in a vacuum manner to obtain the biological memristor with the silver electrode/coupling dielectric layer/copper electrode structure.
Example 3
The invention relates to a specific implementation mode of a low-energy-consumption and high-reliability preparation method of a biological memristor, which comprises the following steps of:
A. ultrasonically cleaning lotus root blocks, crushing the lotus root blocks into powder by using a crusher, and filtering the powder by using a filter screen of 1000-1600 meshes to obtain fine lotus root powder;
B. carrying out ultrasonic cleaning and drying on a copper sheet with the thickness of 0.05mm for later use;
C. stirring and mixing 2 parts by mass of a sodium perchlorate solution of polyvinylidene fluoride (PVDF) and 7 parts by mass of fine lotus root starch to prepare a lotus root material colloid; wherein the mass concentration of the sodium perchlorate solution of polyvinylidene fluoride (PVDF) is 50 percent;
D. c, coating the lotus root material colloid obtained in the step C on the red copper sheet obtained in the step B in a rotating mode at the rotating speed of 3000 revolutions per minute; forming a coupling dielectric layer on the red copper sheet;
E. and D, naturally drying the red copper sheet obtained in the step D, and then depositing a layer of silver on the surface of the coupling dielectric layer in a vacuum manner to obtain the biological memristor with the silver electrode/coupling dielectric layer/copper electrode structure.
Claims (1)
1. A preparation method of a low-energy-consumption and high-reliability biological memristor comprises the following steps:
A. ultrasonically cleaning lotus root blocks, crushing the lotus root blocks into powder by using a crusher, and filtering the powder by using a filter screen of 1000-1600 meshes to obtain fine lotus root powder;
B. ultrasonically cleaning a copper sheet with the thickness of 0.02-0.05mm, and drying for later use;
C. stirring and mixing 1-2 parts by mass of a sodium perchlorate solution of polyvinylidene fluoride (PVDF) and 7-10 parts by mass of fine lotus root starch to prepare a lotus root material colloid; wherein the mass concentration of the sodium perchlorate solution of polyvinylidene fluoride (PVDF) is 25 to 50 percent;
D. spin-coating the lotus root material colloid obtained in the step C on the red copper sheet obtained in the step B at the rotating speed of 2000-5000 revolutions per minute; forming a coupling dielectric layer on the red copper sheet;
E. and D, naturally drying the red copper sheet obtained in the step D, and then depositing a layer of silver on the surface of the coupling dielectric layer in a vacuum manner to obtain the biological memristor with the silver electrode/coupling dielectric layer/copper electrode structure.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113571636A (en) * | 2021-07-27 | 2021-10-29 | 南京邮电大学 | Flexible memristor and preparation method thereof |
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| CN108831994A (en) * | 2018-06-25 | 2018-11-16 | 西南交通大学 | A kind of preparation method of the biological memristor based on garlic |
| CN109309157A (en) * | 2018-09-11 | 2019-02-05 | 西南交通大学 | A kind of preparation method of the flexible biological memristor based on mushroom powder |
| CN109616571A (en) * | 2018-11-13 | 2019-04-12 | 西南交通大学 | A kind of preparation method of collagen memristor |
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2019
- 2019-10-12 CN CN201910968428.8A patent/CN110718631A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1177739A (en) * | 1997-07-29 | 1998-04-01 | 浙江大学 | Moisture sensitive resistance type starch substrate conductive composite material and preparating method therefor |
| CN103403904A (en) * | 2011-03-24 | 2013-11-20 | 株式会社东芝 | Organic molecular memory and method of manufacturing the same |
| CN108447985A (en) * | 2018-04-10 | 2018-08-24 | 西南交通大学 | A kind of preparation method of the biological memristor based on banana skin |
| CN108831993A (en) * | 2018-05-15 | 2018-11-16 | 深圳大学 | A kind of resistance-variable storing device and preparation method |
| CN108831994A (en) * | 2018-06-25 | 2018-11-16 | 西南交通大学 | A kind of preparation method of the biological memristor based on garlic |
| CN109309157A (en) * | 2018-09-11 | 2019-02-05 | 西南交通大学 | A kind of preparation method of the flexible biological memristor based on mushroom powder |
| CN109616571A (en) * | 2018-11-13 | 2019-04-12 | 西南交通大学 | A kind of preparation method of collagen memristor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113571636A (en) * | 2021-07-27 | 2021-10-29 | 南京邮电大学 | Flexible memristor and preparation method thereof |
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Application publication date: 20200121 |