CN109309157A - A kind of preparation method of the flexible biological memristor based on mushroom powder - Google Patents
A kind of preparation method of the flexible biological memristor based on mushroom powder Download PDFInfo
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- CN109309157A CN109309157A CN201811054807.8A CN201811054807A CN109309157A CN 109309157 A CN109309157 A CN 109309157A CN 201811054807 A CN201811054807 A CN 201811054807A CN 109309157 A CN109309157 A CN 109309157A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of the switching material, e.g. layer deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
Abstract
The invention discloses a kind of preparation methods of flexible biological memristor based on mushroom powder, comprising the following steps: prepares mushroom powder: using edible Xianggu-mushroom as raw material, obtaining partial size through filtering after being fully ground is 1 μm of mushroom superfines below；It prepares precursor colloids: mushroom powder is uniformly mixed with Kynoar powder, potassium hyperchlorate solution, it is spare that sposh shape precursor colloids are made；Prepare lower electrode: using the flexible metal foil polished through fine sandpaper as lower electrode；It prepares active layer: the step S2 precursor colloids obtained being coated uniformly in lower electrode surface and form biomembrane；It prepares top electrode: after biomembrane is dry, top electrode is prepared on biomembrane, that is, the flexible biological memristor based on mushroom powder obtained.This method preparation flow is easily achieved, and is suitable for producing in enormous quantities, and cost consumption is low, and the biological memory resistor being prepared into has many advantages, such as to have excellent performance, stability is good, no pollution to the environment, can be used for preparing and flexible dresses electronic device.
Description
Technical field
The invention belongs to organic electronics and information technology field, and in particular to a kind of flexible biological based on mushroom powder is recalled
Hinder the preparation method of device.
Background technique
Quick update of electronic equipment is one of the performance grown rapidly the information age, and multifunction electronic product can
The world is set to be increasingly becoming " global village " by the storage and transmission of data, wherein memory has vital effect；Storage
Device also plays important role in people's lives production, but from the 1950s magnetic disk storage by since developing,
Conventional memory device can no longer meet now due to the disadvantages of reading speed is slow, and storage unit is small, and occupied space is big, and energy consumption is higher
For the demand of development of information, a kind of exploitation of the memory of novel environment friendly is extremely urgent；Currently, solid state non-volatile
Memory (NVM) is increasingly becoming research hotspot, including magnetic storage due to its excellent properties in terms of data storage
(MRAM), ferroelectric memory (FRAM), phase transition storage (PCRAM) and resistance-type switch memory (RRAM), wherein resistance is opened
Memory is closed because the features such as its structure is simple, and integrated level is high, and cost consumption is low, and material source is extensive has attracted scientific research personnel's
Concern.
Resistance switch memory (RRAM) is considered as that can break through prior art bottleneck and technology barrier in storage art
Hinder, and realizes one of the most competitive candidate of Moore's Law prediction in next-generation electronic device.Resistance switch storage
The characteristic of device be under electric field pulse, can be between two discrepant resistance value states (high resistant state of value and low-resistance state of value)
Regular switching, if high-impedance state (HRS) and low resistance state (LRS) is respectively defined as computer language logical zero and logic
" 1 ", so that resistor crosspoint can be used as information memory cell to realize the mesh for storing information in electronic application
's.In general, resistance switch memory has metal/semiconductor/metal (MSM) and metal/insulator/metal (MIM)
Structure, various semiconductors and insulating material are already used to as intermediate dielectric layer, such as TaOx, MoS2、MnO-CeO2
Deng；In addition, for environmentally protective, the sustainable use of non-renewable resources prepares the development of memory device using biomaterial
It has been a great concern, including cellulose, the organic-biological material including gelatin and protein etc. has been demonstrated to have superior
Switch memory performance, compared with traditional materials, it is simple that biomaterial shows preparation process, low cost, environmental protection and can biology
The advantages that degradation.Mushroom powder is used in the present invention as intermediate insulating layer material, material source is advised extensively, suitable for big
Mould production, the biological memory resistor being prepared into are had excellent performance, and are had in wearable and flexible electronic device application aspect huge
Potentiality.
Summary of the invention
Present invention aim to address the above problems, provide a kind of system of flexible biological memristor based on mushroom powder
Preparation Method, this method preparation flow are easily achieved, and are suitable for producing in enormous quantities, and cost consumption is low, the life prepared using this method
Object memory resistor have have excellent performance, stability is good, no pollution to the environment, to can be used for preparing flexible wearing electronic device etc. excellent
Point, the research and development for biological memristor provide structural support, are expected to be applied to the highdensity stored electrons device of low energy consumption
Field.
In order to solve the above technical problems, the technical scheme is that a kind of flexible biological memristor based on mushroom powder
The preparation method of device, comprising the following steps:
S1: prepare mushroom powder: using edible Xianggu-mushroom as raw material, obtaining partial size through filtering after being fully ground is 1 μm below
Mushroom superfines, it is spare；
S2: precursor colloids are prepared: mushroom powder is uniformly mixed with Kynoar powder, potassium hyperchlorate solution, be made
Sposh shape precursor colloids are spare；
S3: lower electrode is prepared: using the flexible metal foil polished through fine sandpaper as lower electrode；
S4: it prepares active layer: the step S2 precursor colloids obtained being coated uniformly in lower electrode surface and form biomembrane；
S5: preparation top electrode: after biomembrane is dry, preparing top electrode on biomembrane, that is, obtain based on mushroom powder
The flexible biological memristor at end, the memristor have top electrode/mushroom powder/lower electrode arrangement.
In above-mentioned technical proposal, in the step S1, the specific steps of ultra-fine mushroom powder are prepared are as follows: distill mushroom
Water is cleaned, after stripping and slicing, is placed in drying box and is gone water to constant weight, takes out the mushroom block grinding flour after drying, powder is placed in wine
In essence, filtering and weeding out partial size is more than that suspension is obtained required mushroom powder into drying again after 1 μm of particle.It is used
The filter core aperture of Suction filtration device is 1 μm.
In above-mentioned technical proposal, it is characterised in that: drying temperature is 36~65 DEG C.
In above-mentioned technical proposal, in the step S2, the mass ratio of mushroom powder and Kynoar is 6:1.
In above-mentioned technical proposal, in the step S3, the model of fine sandpaper is greater than or equal to 2000 mesh.The purpose of polishing
It is removal surface metal oxide and impurity, shows metallic luster.
In above-mentioned technical proposal, in the step S4, the metal foil as lower electrode is fixed in substrate, using spin coating
Precursor colloids are coated uniformly in metal foil by method, and rotation speed is 400~600r/s, and rotational time is 10~20s.The base
Bottom is smooth glass or quartz.
In above-mentioned technical proposal, in the step S5, top electrode, the drop coating on biomembrane, drop coating are prepared using drop-coating
Region area be about 0.5~2mm2。
In above-mentioned technical proposal, in the step S4,20~40 μm of the thickness of biomembrane.Biomembrane is too thick or too thin to lead
Cause the degradation of memory resistor.
In above-mentioned technical proposal, the top electrode is using silver, and the lower electrode is using one in silver, titanium, iron, aluminium or copper
Kind.
The preparation method of flexible biological memristor provided by the invention based on mushroom powder, innovative point are: resistance
Switch storage is following great potential one of the memory by practice, its excellent, read or write speed because of storge quality
Fastly, integration density height, the low power consumption and other advantages object that researcher pays close attention to again and again, to respond environmentally friendly sustainable development reason
It reads, preparing electronic device with biomaterial becomes the most important thing of research, the resistance switch memory device of biomaterial building
Because it has many advantages, such as low cost, sustainability and environmental protection, it is with a wide range of applications in flexible electronic component.This hair
The active layer material with mushroom powder as memristor of bright innovation is inventor by a large amount of hard experiments repeatedly and
, waste during preparing electronic device to various non-renewable resources is avoided, environmental protection, and mushroom powder are conducive to
End, without complicated purification evolutionary process, can effectively promote preparation efficiency and production cost, select different metals in preparation process
Foil provides one ingeniously as wearable flexible resistor random access memory (RRAM) as bottom electrode, for our equipment
Wonderful potential application.Under the pulse of voltage and current, Ag top electrode can be ionized out Ag+, it is rich in mushroom powder active layer
Na and K element can be ionized out Ma respectively+, K+, lower electrode can be ionized out corresponding metal ion, these ions pass through oxygen
Change reduction reaction, stable filament is back and forth formed in a insulating layer, so that device is in high-impedance state (HRS) and low resistance state
(LRS) cyclic switching between, if the logical zero and logical one of computer language are respectively defined as, so that resistance signal
Electronic signal is converted to, to realize the purpose of information storage.
The preparation method of flexible biological memristor provided by the invention based on mushroom powder has following beneficial outcomes:
1, the present invention plates mushroom powder as lower electrode, then by cheap spin coating technique using metal foil on the bottom electrode
End/mixed uniformly presoma the colloid of Kynoar powder/potassium hyperchlorate solution, drop coating top electrode Ag after drying, thus
To Ag/ mushroom powder/structure of metal foil memristor, this method preparation flow is easily achieved, and is suitable for producing in enormous quantities, cost disappears
Consume it is low, the biological memory resistor being prepared into have have excellent performance, stability is good, no pollution to the environment, can be used for preparing flexibility and wears
The advantages that wearing electronic device, the exploitation for biological memristor provide technical support, are expected to be applied to the highdensity storage of low energy consumption
Field of electronic devices；
2, the mushroom active material in the biological memristor of the present invention has from a wealth of sources, place compared to traditional resistive material
Reason process is simple, is prepared into device no pollution to the environment has many advantages, such as biodegradable；
3, the technology for coating (spin coating, drop coating) used in the present invention is simple and reliable, and the requirement to equipment is low, energy consumption
It is few, easily with preparation and preparation cost it is cheap, and the preparation process of device can carry out at normal temperature with operational process so that
Device is conducive to be mass produced and apply；
4, device of the invention has biggish on-off ratio, and memristor is had excellent performance；It, can with excellent cyclical stability
It is used to prepare the archetype of memristor memory, provides reliable foundation for the development of memristor.
5, lower electrode of the present invention is flexible metal foil, so that preparation process is more simple and fast, and is made
The biological memory resistor that must be prepared is particularly suitable for flexible wearing technical field of electronic equipment.
Detailed description of the invention:
Fig. 1 is the flow chart of the preparation method of the flexible biological memristor the present invention is based on mushroom powder；
Fig. 2 is the XRD of mushroom powder in the specific embodiment of the invention, infrared spectroscopy, EDS map；
Fig. 3 is the phenogram with the biological memory resistor memristor performance of Ag/ mushroom/Al structure produced by the present invention
Spectrum；
Fig. 4 is the phenogram with the biological memory resistor memristor performance of Ag/ mushroom/Cu structure produced by the present invention
Spectrum；
Fig. 5 is the phenogram with the biological memory resistor memristor performance of Ag/ mushroom/Ag structure produced by the present invention
Spectrum；
Fig. 6 is the phenogram with the biological memory resistor memristor performance of Ag/ mushroom/Ti structure produced by the present invention
Spectrum.
Specific embodiment
The present invention is described further in the following with reference to the drawings and specific embodiments:
As shown in Figure 1, the flow chart of the preparation method for the flexible biological memristor based on mushroom powder, including following step
It is rapid:
S1: it prepares mushroom powder: mushroom distilled water being cleaned, after stripping and slicing, be placed in drying box and go water to constant weight, take out
Mushroom block grinding flour after drying, powder is placed in alcohol, filter weed out partial size be more than after 1 μm of particle by suspension into
It dries again, mushroom powder, spare needed for obtaining；
S2: precursor colloids are prepared: mushroom powder is uniformly mixed with Kynoar (PVDF) powder according to the mass ratio of 6:1
It closes, instills potassium hyperchlorate solution and uniformly mix and be allowed to as sposh shape, obtained precursor colloids are spare；
S3: lower electrode is prepared: using the flexible metal foil polished through fine sandpaper as lower electrode；
S4: it prepares active layer: using spin-coating method, the step S2 precursor colloids obtained being coated uniformly in lower electrode surface
Biomembrane is made, rotation speed is 400~600r/s, and rotational time is 10~20s；
S5: preparation top electrode: after biomembrane is dry, using drop-coating, drop coating silver, obtained Ag are powered on biomembrane
Pole, the region area that drop-coating plates Ag is 0.5~2mm2, that is, the flexible biological memristor based on mushroom powder obtained, this is recalled
Hindering device has top electrode/mushroom powder/lower electrode arrangement.
Below by way of specific embodiment, the present invention will be described in further detail, of the invention excellent further to show
Point and principle:
Embodiment 1
S1: it prepares mushroom powder: collecting fresh edible Xianggu-mushroom, removing surface has behind the part of damage with distillation washing
Only, it is cut into small pieces, is placed in after 36 DEG C of thermostatic drying chambers are dehydrated completely, powder is dissolved in alcohol after being fully ground, screen removes partial size
Suspension is dried again after particle more than 1 μm, ultra-fine mushroom powder needed for obtaining.
S2: prepare precursor colloids: the ultra-fine mushroom powder and Kynoar (PVDF) that step S1 is obtained are according to 6:1's
Mass ratio uniformly mixes, and instills the mixing of potassium hyperchlorate solution and makes sposh shape, it is spare to obtain precursor colloids；
S3: it prepares lower electrode: cutting into the size of 3cm × 3cm using the flexible aluminium foil of purchase, use 2000 purposes
Fine sandpaper polishes to surface, removes the alumite and other impurities on surface, is polished to aluminium foil and shows metallic luster.
S4: it prepares active layer: the step S3 aluminium foil prepared being fixed in smooth substrate of glass, using spin coating technique forerunner
Colloid is coated uniformly on aluminium foil, design parameter used in spin coating are as follows: rotation speed 400r/s, rotational time are 10 seconds；
S5: preparation top electrode: using drop-coating, and the drop coating Ag on step S4 mushroom biomembrane prepares Ag top electrode.Drop coating
The region area that method plates Ag is 0.5mm2。
According to the rapid concrete operations of step S1, S2, S3, S4 and S5, Ag/ mushroom/Al biology memory resistor can be obtained.
As shown in Fig. 2, Fig. 2 (a) is the XRD spectrum of mushroom powder made from the present embodiment, correspond to graphite for 20.3 ° in figure
(002) crystal face shows that the mushroom powder main component is to consist of carbon；Fig. 2 (b) is the infrared spectrogram of mushroom powder, from figure
In can be seen that, main peak wavelength be 3410cm-1Place, mainly as caused by-O-H key stretching vibration, shows-O-H functional group
Largely exist in mushroom powder, wavelength 2930cm-1The peak at place is as caused by the stretching vibration of CH- functional group, and wavelength is
1640cm-1The peak at place is the wavelength 1410cm as caused by the stretching vibration of-C- functional group-1The peak at place is due to CH- function
Caused by group's stretching vibration, wavelength 1040cm-1The peak at place is the infrared spectroscopy as caused by the stretching vibration of-C-H-O functional group
Show largely there is-O-H function in mushroom powder, this will provide more ions for the performance of memory and supplies；Fig. 2 (c) is
The energy spectrum diagram of mushroom powder also contains sodium (Na), copper in ultra-fine mushroom powder other than including largely carbon (C) and oxygen (O) element
(Cu), the elements such as potassium (K), sulphur (S), phosphorus (P), chlorine (Cl), fluorine (F), wherein fluorine (F) and phosphorus (P) element may be from gathering inclined fluorine
Ethylene (PVDF), potassium (K) and chlorine (Cl) element may be from potassium hyperchlorate solution, meet the chemistry that common mushroom powder is included
Element.
As shown in figure 3, for Ag/ mushroom/Al structure-biological memristor performance characterization map made from the present embodiment, wherein
Left side is the loop test performance map that I-V carries out 100 times, wherein the contact tested is respectively electrode under Ag top electrode and Al, with
The scanning speed of 0.2V/s carries out loop test to biological memristor from 0V → 2.0V → -2.0V → 0V, can be obvious from figure
Find out that prepared memristor has good memristor effect, right side is the high low resistance state of memory resistor with 100 circulations time
Several variation diagrams shows to prepare it is seen that height resistance ratio is about 1.2, and shows to continue the phenomenon that increasing
Biological memristor storge quality it is more stable.
Embodiment 2
S1: it prepares mushroom powder: collecting fresh edible Xianggu-mushroom, removing surface has behind the part of damage with distillation washing
Only, it is cut into small pieces, is placed in after 50 DEG C of thermostatic drying chambers are dehydrated completely, powder is dissolved in alcohol after being fully ground, screen removes partial size
Suspension is dried again after particle more than 1 μm, ultra-fine mushroom powder needed for obtaining.
S2: prepare precursor colloids: the ultra-fine mushroom powder and Kynoar (PVDF) that step S1 is obtained are according to 6:1's
Mass ratio uniformly mixes, and instills the mixing of potassium hyperchlorate solution and makes sposh shape, obtains precursor colloids solution for standby；
S3: it prepares lower electrode: cutting into the size of 3cm × 3cm using the flexible copper clad of purchase, use 2000 purposes
Fine sandpaper polishes to surface, removes the copper oxidation film and other impurities on surface, is polished to copper foil and shows metallic luster.
S4: it prepares active layer: the step S3 copper foil prepared being fixed in smooth substrate of glass, using spin coating technique forerunner
Colloidal solution is coated uniformly on copper foil, design parameter used in spin coating are as follows: rotation speed 500r/s, rotational time 15
Second；
S5: preparation top electrode: using drop-coating, and the drop coating Ag on step S4 mushroom biomembrane prepares Ag top electrode.Drop coating
The region area that method plates Ag is~1mm2。
According to the rapid concrete operations of step S1, S2, S3, S4 and S5, Ag/ mushroom/Cu biology memory resistor can be obtained.
As shown in figure 4, being Ag/ mushroom produced by the present invention/Cu structure-biological memristor performance characterization map, wherein
Left side is the loop test performance map that I-V carries out 100 times, wherein the contact tested is respectively electrode under Ag top electrode and Cu, with
The scanning speed of 0.2V/s carries out loop test to biological memristor from 0V → 2.0V → -2.0V → 0V, can be obvious from figure
Find out that prepared memristor has excellent memristor effect, right side is the high low resistance state of memory resistor with 100 circulations time
Several variation diagrams, it is seen that height resistance ratio is about 5, height resistance ratio can be continual and steady, shows the life of preparation
Object memristor storge quality is stablized, and memory performance is excellent.
Embodiment 3
S1: it prepares mushroom powder: collecting fresh edible Xianggu-mushroom, removing surface has behind the part of damage with distillation washing
Only, it is cut into small pieces, is placed in after 60 DEG C of thermostatic drying chambers are dehydrated completely, powder is dissolved in alcohol after being fully ground, screen removes partial size
Suspension is dried again after particle more than 1 μm, ultra-fine mushroom powder needed for obtaining.
S2: prepare precursor colloids: the ultra-fine mushroom powder and Kynoar (PVDF) that step S1 is obtained are according to 6:1's
Mass ratio uniformly mixes, and instills the mixing of potassium hyperchlorate solution and makes sposh shape, obtains precursor colloids solution for standby；
S3: it prepares lower electrode: cutting into the size of 3cm × 3cm using the flexible silver foil of purchase, use 2000 purposes
Fine sandpaper polishes to surface, removes the metal oxide film and other impurities on surface, is polished to silver foil and shows metal light
Pool.
S4: it prepares active layer: the step S3 silver foil prepared being fixed in smooth substrate of glass, using spin coating technique forerunner
Colloidal solution is coated uniformly on silver foil, design parameter used in spin coating are as follows: rotation speed 500r/s, rotational time 15
Second；
S5: preparation top electrode: using drop-coating, and the drop coating Ag on step S4 mushroom biomembrane prepares Ag top electrode.Drop coating
The region area that method plates Ag is~1.5mm2。
According to the rapid concrete operations of step S1, S2, S3, S4 and S5, Ag/ mushroom/Ag biology memory resistor can be obtained.
As shown in figure 5, being Ag/ mushroom produced by the present invention/Ag structure-biological memristor performance characterization map, wherein left
Side is the loop test performance map that I-V carries out 100 times, wherein the contact tested is respectively electrode under Ag top electrode and Ag, with
The scanning speed of 0.2V/s carries out loop test to biological memristor from 0V → 2.0V → -2.0V → 0V, can be obvious from figure
Find out that prepared memristor storage pane opening is big, there is outstanding memristor effect, right side is the high low resistance state of memory resistor
With the variation diagram of 100 cycle-indexes, it is seen that height resistance ratio is about 7, show the biological memristor of preparation
Storge quality is more stable, and memory performance is outstanding.
Embodiment 4
S1: it prepares mushroom powder: collecting fresh edible Xianggu-mushroom, removing surface has behind the part of damage with distillation washing
Only, it is cut into small pieces, is placed in after 65 DEG C of thermostatic drying chambers are dehydrated completely, powder is dissolved in alcohol after being fully ground, screen removes partial size
Suspension is dried again after particle more than 1 μm, ultra-fine mushroom powder needed for obtaining.
S2: prepare precursor colloids: the ultra-fine mushroom powder and Kynoar (PVDF) that step S1 is obtained are according to 6:1's
Mass ratio uniformly mixes, and instills the mixing of potassium hyperchlorate solution and makes sposh shape, obtains precursor colloids solution for standby；
S3: it prepares lower electrode: cutting into the size of 3cm × 3cm using the flexible titanium foil of purchase, use 2000 purposes
Fine sandpaper polishes to surface, removes the metal oxide film and other impurities on surface, is polished to titanium foil and shows metal light
Pool.
S4: it prepares active layer: the step S3 titanium foil prepared being fixed in smooth substrate of glass, using spin coating technique forerunner
Colloidal solution is coated uniformly on silver foil, design parameter used in spin coating are as follows: rotation speed 600r/s, rotational time 20
Second；
S5: preparation top electrode: using drop-coating, and the drop coating Ag on step S4 mushroom biomembrane prepares Ag top electrode.Drop coating
The region area that method plates Ag is~2mm2。
According to the rapid concrete operations of step S1, S2, S3, S4 and S5, Ag/ mushroom/Ti biology memory resistor can be obtained.
As shown in fig. 6, being Ag/ mushroom produced by the present invention/Ti structure-biological memristor performance characterization map, wherein left
Side is the loop test performance map that I-V carries out 100 times, wherein the contact tested is respectively electrode under Ag top electrode and Ti, with
The scanning speed of 0.2V/s carries out loop test to biological memristor from 0V → 2.0V → -2.0V → 0V, can be obvious from figure
Find out that prepared memristor storage pane opening is huge, there is very outstanding memristor effect, right side is the height of memory resistor
Low resistance state shows preparation it is seen that height resistance ratio is about 10 with the variation diagram of 100 cycle-indexes
Biological memristor storge quality is stablized, and memory performance is very excellent.
Those of ordinary skill in the art will understand that the embodiments described herein, which is to help reader, understands this hair
Bright principle, it should be understood that protection scope of the present invention is not limited to such specific embodiments and embodiments.This field
Those of ordinary skill disclosed the technical disclosures can make according to the present invention and various not depart from the other each of essence of the invention
The specific variations and combinations of kind, these variations and combinations are still within the scope of the present invention.
Claims (9)
1. a kind of preparation method of the flexible biological memristor based on mushroom powder, includes the following steps:
S1: prepare mushroom powder: using edible Xianggu-mushroom as raw material, obtaining partial size through filtering after being fully ground is 1 μm of mushroom below
Superfines, it is spare；
S2: precursor colloids are prepared: mushroom powder is uniformly mixed with Kynoar powder, potassium hyperchlorate solution, sposh is made
Shape precursor colloids are spare；
S3: lower electrode is prepared: using the flexible metal foil polished through fine sandpaper as lower electrode；
S4: it prepares active layer: the step S2 precursor colloids obtained being coated uniformly in lower electrode surface, biomembrane is made；
S5: preparation top electrode: after biomembrane is dry, preparing top electrode on biomembrane, that is, obtain based on mushroom powder
Flexible biological memristor, the memristor have top electrode/mushroom powder/lower electrode arrangement.
2. the preparation method of the flexible biological memristor according to claim 1 based on mushroom powder, it is characterised in that: institute
It states in step S1, prepares the specific steps of ultra-fine mushroom powder are as follows: mushroom distilled water is cleaned, after stripping and slicing, drying box is placed in
In go water to constant weight, take out it is dry after mushroom block grinding flour, powder is placed in alcohol, it is more than 1 μm that suction filtration, which weeds out partial size,
Particle after by suspension into drying again, mushroom powder needed for obtaining.
3. the preparation method of the flexible biological memristor according to claim 2 based on mushroom powder, it is characterised in that: dry
Dry temperature is 36~65 DEG C.
4. the preparation method of the flexible biological memristor according to claim 1 based on mushroom powder, it is characterised in that: institute
It states in step S2, the mass ratio of mushroom powder and Kynoar is 6:1.
5. the preparation method of the flexible biological memristor according to claim 1 based on mushroom powder, it is characterised in that: institute
It states in step S3, the model of fine sandpaper is greater than or equal to 2000 mesh.
6. the preparation method of the flexible biological memristor according to claim 1 based on mushroom powder, it is characterised in that: institute
It states in step S4, the metal foil as lower electrode is fixed in substrate, precursor colloids are coated uniformly on by gold using spin-coating method
Belong on foil, rotation speed is 400~600r/s, and rotational time is 10~20s.
7. the preparation method of -6 any flexible biological memristors based on mushroom powder according to claim 1, feature
It is: in the step S5, top electrode is prepared using drop-coating, the region area of drop coating is in about 0.5~2mm2。
8. the preparation method of -6 any flexible biological memristors based on mushroom powder according to claim 1, feature
It is: 20~40 μm of the thickness of biomembrane.
9. the preparation method of -6 any flexible biological memristors based on mushroom powder according to claim 1, feature
Be: the top electrode is using silver, and the lower electrode is using one of silver, titanium, iron, aluminium or copper.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110718631A (en) * | 2019-10-12 | 2020-01-21 | 西南交通大学 | Preparation method of low-energy-consumption and high-reliability biological memristor |
| CN111092097A (en) * | 2019-12-17 | 2020-05-01 | 西交利物浦大学 | RRAM based on biological material and preparation method thereof |
| CN113594363A (en) * | 2021-07-30 | 2021-11-02 | 华中科技大学 | Environment-friendly cellulose-based self-supporting memristor and preparation method thereof |
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| CN106953009A (en) * | 2017-04-28 | 2017-07-14 | 西南交通大学 | A kind of preparation method of memristor |
| CN108447985A (en) * | 2018-04-10 | 2018-08-24 | 西南交通大学 | A kind of preparation method of the biological memristor based on banana skin |
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| CN103403905A (en) * | 2011-03-24 | 2013-11-20 | 株式会社东芝 | Organic molecular memory |
| CN106953009A (en) * | 2017-04-28 | 2017-07-14 | 西南交通大学 | A kind of preparation method of memristor |
| CN108447985A (en) * | 2018-04-10 | 2018-08-24 | 西南交通大学 | A kind of preparation method of the biological memristor based on banana skin |
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| CN110718631A (en) * | 2019-10-12 | 2020-01-21 | 西南交通大学 | Preparation method of low-energy-consumption and high-reliability biological memristor |
| CN111092097A (en) * | 2019-12-17 | 2020-05-01 | 西交利物浦大学 | RRAM based on biological material and preparation method thereof |
| CN113594363A (en) * | 2021-07-30 | 2021-11-02 | 华中科技大学 | Environment-friendly cellulose-based self-supporting memristor and preparation method thereof |
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