CN111092097A - RRAM based on biological material and preparation method thereof - Google Patents
RRAM based on biological material and preparation method thereof Download PDFInfo
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- 239000012620 biological material Substances 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 26
- 230000008859 change Effects 0.000 claims abstract description 16
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 239000010409 thin film Substances 0.000 claims abstract description 13
- 239000007772 electrode material Substances 0.000 claims abstract description 8
- 238000001704 evaporation Methods 0.000 claims abstract description 8
- 230000008020 evaporation Effects 0.000 claims abstract description 8
- 238000007747 plating Methods 0.000 claims abstract description 4
- 244000085595 Zizania latifolia Species 0.000 claims description 62
- 235000004259 Zizania latifolia Nutrition 0.000 claims description 62
- 239000010408 film Substances 0.000 claims description 29
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 20
- 239000008367 deionised water Substances 0.000 claims description 20
- 229910021641 deionized water Inorganic materials 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 238000004528 spin coating Methods 0.000 claims description 19
- 238000000137 annealing Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 238000001035 drying Methods 0.000 claims description 11
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- 241000746966 Zizania Species 0.000 claims description 8
- 235000002636 Zizania aquatica Nutrition 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 7
- 238000009210 therapy by ultrasound Methods 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 238000012216 screening Methods 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 239000011148 porous material Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 239000004695 Polyether sulfone Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229920006393 polyether sulfone Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 238000001291 vacuum drying Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 9
- 238000003860 storage Methods 0.000 abstract description 3
- 239000002994 raw material Substances 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 26
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004166 TaN Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- NPNMHHNXCILFEF-UHFFFAOYSA-N [F].[Sn]=O Chemical compound [F].[Sn]=O NPNMHHNXCILFEF-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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Abstract
The invention discloses a preparation method of a RRAM (resistive random access memory) based on a biological material, which comprises the following steps: preparing a resistance change oxide layer on the bottom electrode layer, wherein the resistance change oxide layer is a cane shoot thin film layer prepared by a solution method; and plating an upper electrode material on the resistive oxide layer by an evaporation coating method to form an upper electrode layer. Can realize the preparation of low-cost RRAM, has less investment on equipment and raw materials, and can realize large-scale industrial application. Compared with the traditional resistance change material, the material has rich biological material resources, convenient material acquisition and reduced cost. Meanwhile, the water-soluble degradable material has good environment-friendly property and can be used in special occasions such as a confidential storage system or medical treatment. The resulting translucent device can be used in transparent electronic devices.
Description
Technical Field
The invention relates to the technical field of resistive random access memories, in particular to a RRAM based on a biological material and a preparation method thereof.
Background
Resistive Random Access Memory (RRAM) is a new-generation nonvolatile Memory, and has great application potential in the next-generation large-scale electronic and photoelectric circuits and the field of neuromorphic calculation due to its characteristics of high operation speed, high density storage capacity, low cost, low power consumption, high tolerance and the like. In recent years, transparent electronic devices such as touch screens, wearable displays, solar panels and sensors have wide application prospects in the fields of national defense, aerospace, consumer electronics, traffic and the like. Therefore, a high-transparency RRAM device having excellent device characteristics has attracted much attention.
The basic memory cell of the RRAM includes a Metal Insulator Metal (MIM) resistor. By means of voltage or current pulse, the resistance of the MIM structure can be enabled to have two states of a high resistance state and a low resistance state, and accordingly 0 and 1 are represented. The resistance-change layer is a key part of the RRAM, and transition metal binary oxides such as TiO2, NiO, HfO2 and the like become research hotspots of resistance-change layer materials due to the advantages of easiness in preparation, low cost and the like. Pt, Cu, Ti, TiN, TaN, etc. have been used as electrode materials in RRAM devices, and Cu, Ti, TiN, TaN, etc. have been widely used in integrated circuit copper interconnect processes. The oxide film which is the most widely used material for the middle resistive layer of the RRAM device is prepared by methods such as sputtering, chemical vapor deposition, atomic layer deposition and the like. The traditional material and method face the problems of large equipment investment, high production cost and the like in large-scale preparation, and can not meet the requirement of industrial production.
Disclosure of Invention
In order to solve the technical problems, the invention aims to provide a RRAM based on a biological material and a preparation method thereof.
The technical scheme of the invention is as follows:
a preparation method of a biomaterial-based RRAM comprises the following steps:
s01: preparing a resistance change oxide layer on the bottom electrode layer, wherein the resistance change oxide layer is a cane shoot thin film layer prepared by a solution method;
s02: and plating an upper electrode material on the resistive oxide layer by an evaporation coating method to form an upper electrode layer.
In a preferred technical scheme, the step S01 of preparing the zizania latifolia film layer by a solution method comprises the following steps:
s11: obtaining wild rice stem bark, cutting the wild rice stem bark into small sections, cleaning with deionized water, and drying;
s12: crushing the dried water bamboo peel, and screening out large particle samples to prepare a water bamboo solution;
s13: dropwise adding the prepared water bamboo solution on the bottom electrode layer, and performing spin coating, wherein the spin coating time is not more than 40s, and the rotating speed is 3000-3500 rpm; repeating the operation, and carrying out spin coating for multiple times;
s14: and after the spin coating is finished, annealing until the solution is solidified to form a film, wherein the thickness of the film layer is 100-200 nm, so that the water bamboo film layer is prepared, the annealing temperature is 200-250 ℃, and the annealing time is not more than 1 h.
In a preferred technical scheme, the drying step in the step S11 comprises vacuum drying in a drying oven at 50 ℃ for 24 h.
In a preferred technical scheme, in the step S12, a stainless steel sieve with 200 meshes and a pore size of 0.074mm is used for screening out large-particle samples.
In a preferred technical scheme, the step S12 of preparing the zizania latifolia solution comprises: adding the crushed water bamboo bark into deionized water, NMP or ethanol, wherein the ratio of the water bamboo bark to the deionized water to the NMP or ethanol is 1:100-1:200, carrying out ultrasonic treatment for a certain time, preparing the water bamboo solution at the temperature of 20-30 ℃, and stirring at a constant speed until the water bamboo solution is dissolved uniformly.
In a preferable technical scheme, in the step S13, the zizania latifolia solution is dripped on the bottom electrode layer through a filter tip made of polyethersulfone resin and having an aperture of 0.45 μm.
In the preferred technical scheme, in the step S02, the upper electrode material is placed in a crucible of an electron beam evaporation coating machine, a mask plate with a pore diameter of 0.1-0.3 mm is covered on the zizania latifolia film layer, and the zizania latifolia film layer is placed in the electron beam evaporation coating machine for evaporation coating.
The invention also discloses a biological material-based RRAM, which comprises a top electrode layer, a resistance change oxide layer and a substrate from top to bottom, wherein the resistance change oxide layer is a water bamboo thin film layer prepared by a solution method.
In a preferred technical scheme, the method for preparing the cane shoot film layer by the solution method comprises the following steps:
s11: obtaining wild rice stem bark, cutting the wild rice stem bark into small sections, cleaning with deionized water, and drying;
s12: crushing the dried water bamboo peel, and screening out large particle samples to prepare a water bamboo solution;
s13: dropwise adding the prepared water bamboo solution on the bottom electrode layer, and performing spin coating, wherein the spin coating time is not more than 40s, and the rotating speed is 3000-3500 rpm; repeating the operation, and carrying out spin coating for multiple times;
s14: and after the spin coating is finished, annealing until the solution is solidified to form a film, wherein the thickness of the film layer is 100-200 nm, so that the water bamboo film layer is prepared, the annealing temperature is 200-250 ℃, and the annealing time is not more than 1 h.
In a preferred technical scheme, the step S12 of preparing the zizania latifolia solution comprises: adding the crushed water bamboo bark into deionized water, NMP or ethanol, wherein the ratio of the water bamboo bark to the deionized water to the NMP or ethanol is 1:100-1:200, carrying out ultrasonic treatment for a certain time, preparing the water bamboo solution at the temperature of 20-30 ℃, and stirring at a constant speed until the water bamboo solution is dissolved uniformly.
Compared with the prior art, the invention has the advantages that:
1. the zizania latifolia thin film layer is prepared by a pure solution method to serve as the resistance change oxide layer, the operation is simple and convenient, the RRAM preparation with low cost is realized, the equipment and raw material investment is low, and the method can be used for preparing large-area RRAM devices and realizes large-scale industrial application.
2. Compared with the traditional resistance change material, the zizania latifolia has rich resources, convenient material taking and cost reduction. The advanced transient electronic device capable of being automatically dissolved after being used has good environment-friendliness due to the water-soluble and degradable characteristics, and can be used in special occasions such as a secret storage system or medical treatment.
3. The RRAM prepared by the invention is a semitransparent device, can be applied to transparent electronic devices, and has great prospect.
Drawings
The invention is further described with reference to the following figures and examples:
FIG. 1 is a schematic structural diagram of a biomaterial-based RRAM of the present invention;
FIG. 2 is a flow chart of a method for preparing a biomaterial-based RRAM in accordance with the present invention;
fig. 3 is an I-V curve of a biomaterial-based RRAM device of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings in conjunction with the following detailed description. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
As shown in fig. 1, the biomaterial-based semitransparent RRAM of this embodiment includes a top electrode layer, a resistive oxide layer and a substrate from top to bottom.
The substrate comprises an upper bottom electrode layer 2 and a lower glass substrate 1 which are arranged in a laminated manner;
the bottom electrode layer 2 is a transparent conductive material thin film layer, is selected from one of ITO (indium tin oxide), FTO (fluorine tin oxide) and ZTO (zinc tin oxide), and has a thickness of 200 +/-50 nm, and the optimal thickness is 200 nm.
The sheet resistance of the lower glass substrate 1 was 6-10 Ω, the size was 2.5cm by 2.5cm, and the thickness was 1.1 mm.
The resistance change oxide layer is a biological material thin film layer, the biological material thin film layer is a water bamboo thin film layer 3 prepared by a solution method, and the thickness of the water bamboo thin film layer is 100-200 nm.
The top electrode layer comprises a plurality of top electrodes 4 arrayed on the water bamboo film layer 3; coating granular or powdery upper electrode material on the cane shoot film layer 3 by an evaporation coating method to form an upper electrode layer. The top electrode 4 can be a cylindrical metal silver film layer or a titanium nitride film layer, the diameter is 0.1-0.3 mm, the thickness is 50-150 nm, and the preferable thickness is 100 nm.
As shown in fig. 2, the present embodiment relates to a method for manufacturing the RRAM, including:
a) cleaning a substrate;
the density is 1.05 g/cm3The ITO glass cleaning agent stock solution is diluted to 5-10% and heated to 40-50 ℃.
Completely immersing the substrate into a beaker containing a cleaning agent, and placing the beaker in a deionized water environment for first ultrasonic cleaning;
after 10min, taking out the substrate, washing the substrate with deionized water to remove residual impurities, completely immersing the substrate in a beaker containing deionized water, and placing the beaker in a deionized water environment for secondary ultrasonic treatment;
after 10min, taking out the substrate and washing the substrate with deionized water;
drying the cleaned substrate by using nitrogen, and standing for later use;
and (3) placing the substrate subjected to ultrasonic cleaning and drying treatment into a vacuum cavity of a surface plasma cleaning machine, performing surface plasma cleaning to enhance the hydrophilicity of the bottom electrode layer and improve the film forming property of the resistive oxide layer, wherein the surface plasma cleaning process lasts for 20 min.
After the surface plasma cleaning is finished, the resistive oxide layer is prepared within 10 min.
b) Preparing a resistance change oxide layer;
extracting cortex Zizaniae Caduciflorae at room temperature (25 deg.C), cutting cortex Zizaniae Caduciflorae into small segments, washing with deionized water, and vacuum drying in drying oven at 50 deg.C for 24 hr. And (3) crushing 1g of the product for 5-8 minutes by using a crusher. And (3) removing large particle samples by using a stainless steel sieve of 200 meshes (the aperture is 0.074 mm), adding 0.1-1g of products into 10-200 ml of deionized water or NMP or ethanol, and carrying out ultrasonic treatment for 2 h.
The water bamboo solution is prepared at the temperature of 20-30 ℃, and the ratio of the water bamboo bark to the deionized water and the NMP or the ethanol is 1:100-1: 200.
Stirring the prepared water bamboo solution at a constant speed until the water bamboo solution is uniformly dissolved, then dropwise adding the water bamboo solution on the bottom electrode layer, and carrying out spin coating, wherein the spin coating time is not more than 40s, and the rotating speed is 3000-3500 rpm; and repeating the operations, and annealing the obtained product after the two spin-coating processes are finished until the solution is solidified to form a film, so as to obtain the water bamboo film layer 3, wherein the thickness of the water bamboo film layer 3 is 100nm, and the annealing time is not more than 1h at the annealing temperature of 200-250 ℃.
The Zizania latifolia solution is dripped on the bottom electrode layer through a filter tip injector made of polyethersulfone resin with the aperture of 0.45 mu m.
c) Preparing a top electrode layer;
plating a granular or powdery upper electrode material on the resistive oxide layer by an evaporation coating method to form an upper electrode layer, specifically:
granular metal material Ag is placed in a crucible of an electron beam evaporation coating machine, a mask plate with the aperture of 0.1mm is covered on the water bamboo thin film layer 3, the mask plate is downwards placed on a suction plate in a coating machine cavity, the cavity is closed to carry out evaporation coating operation, and the metal material Ag is coated on the water bamboo thin film layer 3 to form the RRAM device with the top electrode 4.
The aperture of the mask plate can be 0.1-0.3 mm.
The prepared RRAM is tested, and as shown in FIG. 3, a typical I-V curve of the device is displayed, different resistance states can be realized, and the RRAM has good resistance change characteristics.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explaining the principles of the invention and are not to be construed as limiting the invention. Therefore, any modification, equivalent replacement, improvement and the like made without departing from the spirit and scope of the present invention should be included in the protection scope of the present invention. Further, it is intended that the appended claims cover all such variations and modifications as fall within the scope and boundaries of the appended claims or the equivalents of such scope and boundaries.
Claims (10)
1. A preparation method of a biological material-based RRAM is characterized by comprising the following steps:
s01: preparing a resistance change oxide layer on the bottom electrode layer, wherein the resistance change oxide layer is a cane shoot thin film layer prepared by a solution method;
s02: and plating an upper electrode material on the resistive oxide layer by an evaporation coating method to form an upper electrode layer.
2. The method of preparing a biomaterial-based RRAM as claimed in claim 1, wherein the solution process of step S01 is used to prepare a zizania latifolia film layer, comprising the following steps:
s11: obtaining wild rice stem bark, cutting the wild rice stem bark into small sections, cleaning with deionized water, and drying;
s12: crushing the dried water bamboo peel, and screening out large particle samples to prepare a water bamboo solution;
s13: dropwise adding the prepared water bamboo solution on the bottom electrode layer, and performing spin coating, wherein the spin coating time is not more than 40s, and the rotating speed is 3000-3500 rpm; repeating the operation, and carrying out spin coating for multiple times;
s14: and after the spin coating is finished, annealing until the solution is solidified to form a film, wherein the thickness of the film layer is 100-200 nm, so that the water bamboo film layer is prepared, the annealing temperature is 200-250 ℃, and the annealing time is not more than 1 h.
3. The method of claim 2, wherein the step of drying in the step S11 comprises vacuum drying in a drying oven at 50 ℃ for 24 hours.
4. The method of preparing a biomaterial-based RRAM as claimed in claim 2, wherein the large particle sample is screened out by a stainless steel sieve with 200 mesh and 0.074mm pore size in step S12.
5. The method of preparing a biomaterial-based RRAM as claimed in claim 2, wherein the step S12 of configuring the zizania latifolia solution comprises: adding the crushed water bamboo bark into deionized water, NMP or ethanol, wherein the ratio of the water bamboo bark to the deionized water to the NMP or ethanol is 1:100-1:200, carrying out ultrasonic treatment for a certain time, preparing the water bamboo solution at the temperature of 20-30 ℃, and stirring at a constant speed until the water bamboo solution is dissolved uniformly.
6. The method of claim 2, wherein in step S13, zizania latifolia solution is dropped on the bottom electrode layer through a 0.45 μm filter with polyethersulfone resin.
7. The method of claim 1, wherein the step S02 is performed by placing the upper electrode material in a crucible of an electron beam evaporation coater, covering the zizania latifolia film layer with a mask plate having a pore size of 0.1-0.3 mm, and placing the zizania latifolia film layer in the electron beam evaporation coater for evaporation coating.
8. The RRAM based on the biological material comprises a top electrode layer, a resistance change oxide layer and a substrate from top to bottom, and is characterized in that the resistance change oxide layer is a water bamboo thin film layer prepared by a solution method.
9. The biomaterial-based RRAM as claimed in claim 8, wherein the solution process for preparing a zizania latifolia film layer comprises the steps of:
s11: obtaining wild rice stem bark, cutting the wild rice stem bark into small sections, cleaning with deionized water, and drying;
s12: crushing the dried water bamboo peel, and screening out large particle samples to prepare a water bamboo solution;
s13: dropwise adding the prepared water bamboo solution on the bottom electrode layer, and performing spin coating, wherein the spin coating time is not more than 40s, and the rotating speed is 3000-3500 rpm; repeating the operation, and carrying out spin coating for multiple times;
s14: and after the spin coating is finished, annealing until the solution is solidified to form a film, wherein the thickness of the film layer is 100-200 nm, so that the water bamboo film layer is prepared, the annealing temperature is 200-250 ℃, and the annealing time is not more than 1 h.
10. The biomaterial-based RRAM of claim 9, wherein the configuring of the zizania latifolia solution in step S12 comprises: adding the crushed water bamboo bark into deionized water, NMP or ethanol, wherein the ratio of the water bamboo bark to the deionized water to the NMP or ethanol is 1:100-1:200, carrying out ultrasonic treatment for a certain time, preparing the water bamboo solution at the temperature of 20-30 ℃, and stirring at a constant speed until the water bamboo solution is dissolved uniformly.
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| CN108447985A (en) * | 2018-04-10 | 2018-08-24 | 西南交通大学 | A kind of preparation method of the biological memristor based on banana skin |
| CN108831994A (en) * | 2018-06-25 | 2018-11-16 | 西南交通大学 | A kind of preparation method of the biological memristor based on garlic |
| CN109309157A (en) * | 2018-09-11 | 2019-02-05 | 西南交通大学 | A kind of preparation method of the flexible biological memristor based on mushroom powder |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106953009A (en) * | 2017-04-28 | 2017-07-14 | 西南交通大学 | A kind of preparation method of memristor |
| CN108447985A (en) * | 2018-04-10 | 2018-08-24 | 西南交通大学 | A kind of preparation method of the biological memristor based on banana skin |
| CN108831994A (en) * | 2018-06-25 | 2018-11-16 | 西南交通大学 | A kind of preparation method of the biological memristor based on garlic |
| CN109309157A (en) * | 2018-09-11 | 2019-02-05 | 西南交通大学 | A kind of preparation method of the flexible biological memristor based on mushroom powder |
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