CN106953009A - A kind of preparation method of memristor - Google Patents
A kind of preparation method of memristor Download PDFInfo
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- CN106953009A CN106953009A CN201710291749.XA CN201710291749A CN106953009A CN 106953009 A CN106953009 A CN 106953009A CN 201710291749 A CN201710291749 A CN 201710291749A CN 106953009 A CN106953009 A CN 106953009A
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- 239000011737 fluorine Substances 0.000 claims abstract description 3
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 3
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- 239000000696 magnetic material Substances 0.000 description 1
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- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
The invention provides a kind of preparation method of memristor, it is related to memory manufacturing technology field.The problem of it can efficiently solve the negative effect of semi-conducting material.Including Step 1: collecting enough withered leaves；Step 2: the leaf that step one is collected into obtains ultra-fine leaf powder by partition method, it is standby；Step 3: the ultra-fine leaf powder that step 2 is obtained is dissolved in ethyl cellulose solution, colloid is prepared into；Step 4: cooking substrate with the tin dioxide transparent conductive glass FTO of doping fluorine, the colloid obtained step 3 by the use of spin-coating method is used as dielectric layer in the conductive one side spin coating of substrate into film；Step 5: by the substrate with dielectric layer obtained in step 4, being dried more than 12 hours in 60 DEG C of dry bath case；Step 6: the substrate after being dried in step 5 is put into vacuum deposition device；Step 7: the surface deposited metal silver of substrate upper dielectric layer is done into Top electrode by vacuum deposition method, the memory resistor with silver/leaf/FTO structures is obtained.
Description
Technical field
The present invention relates to a kind of memory manufacturing technology field.
Background technology
Memory occupies highly important status always in whole IC markets.Counted according to 2007, global memory city
The sales volume of field is up to 60,000,000,000 dollars, and the market share is also constantly expanding.The memory used at present can be divided into
The random access memory and nonvolatile memory of two classes, i.e. volatibility.The former major product have dynamic random access memory and
SRAM, data rate memory is fast, but after power supply is terminated, the data stored can disappear quickly, therefore storage
Information need continuous refresh.The latter mainly has ROM (read-only storage), PROM (programmable storage), EEPROM (electrically erasables
Except memory), Flash (flash memory) etc., their storage speed is relatively slow, but with remaining able to continue to keep after power-off
The characteristic of data storage, has been widely used in various handheld terminals and multimedia equipment, wherein Flash has become the most
The nonvolatile memory of ripe main flow.Market survey mechanism Databeans points out that whole world Flash sales volumes reached in 2009
To 194.72 hundred million dollars, the 8.7% of semiconductor industry is accounted for, 254.28 hundred million dollars have been reached in whole world Flash sales volumes in 2010,
And increased trend year by year is presented.
Memristor random access memory is a kind of memory based on memristor effect, abbreviation memristor, structure and magnetic memory phase
Seemingly, memory cell is the sandwich structure that conductor/insulation body/conductor is constituted, but dielectric layer both sides are not magnetic materials, but
Conductor material.Generally, conductor is metal, therefore the structure of memristor random access memory is conductor/insulation body/conductor type knot
Structure.Can be in high-impedance state by the resistance for applying insulating barrier in the voltage pulse of certain polarity, conductor/insulation body/conductor structure
Reversible transformation is carried out between low resistance state, the storage of information is achieved in.Memristor random access memory has storage density high, read-write
Speed is fast, the advantages of structure is relatively easy.In addition, the manufacture craft of memristor random access memory is compatible with traditional CMOS technology
Property very well, easily realize high-volume, can be integrated, inexpensive the manufacturing.
At present, the material mainly semiconductor of memristor, such as ZnO, TiO are prepared2, CuO, NiO, BiFeO3, Fe2O3Deng, with
And some organic semiconducting materials, such semi-conducting material obtains that difficult, price is high, is not easily recycled, sustainable use rate is low, and
And some semi-conducting material has toxicity, there is negative effect to environment and human body.Recently, prepared by many scientific research personnel
Begin to use nontoxic natural biologic material, such as silk, protein, egg white in memory resistor.But, silk and protein
It is expensive, it is difficult to obtain.We attempt to prepare memristor using natural biomaterial leaf in the invention, utilize tree
Leaf prepares memristor, not only realizes the secondary utilization of waste, and leaf is easily decomposed, pollution-free, sustainable use.Therefore,
Memristor is prepared using leaf, will be significantly in the long run.
The content of the invention
It is an object of the invention to provide a kind of preparation method of memristor, it can efficiently solve semi-conducting material to environment
The problem of having negative effect with human body.
The purpose of the present invention is achieved through the following technical solutions：A kind of preparation method of memory resistor, including with
Lower step：
Step 1: collecting enough withered leaves；
Step 2: the leaf that step one is collected into obtains ultra-fine leaf powder by partition method, it is standby；
Step 3: the ultra-fine leaf powder that step 2 is obtained is dissolved in ethyl cellulose solution, colloid is prepared into；
Step 4: cooking substrate with the tin dioxide transparent conductive glass FTO of doping fluorine, step 3 is obtained using spin-coating method
Colloid be used as dielectric layer into film in the conductive one side spin coating of substrate；
Step 5: by the substrate with dielectric layer obtained in step 4, being dried more than 12 hours in 60 DEG C of dry bath case；
Step 6: the substrate after being dried in step 5 is put into vacuum deposition device；
Step 7: the surface deposited metal silver of substrate upper dielectric layer is done into Top electrode by vacuum deposition method, had
The memory resistor of silver/leaf/FTO structures.
It is described ultra-fine leaf powder is obtained by partition method specific method be：By the withered leaf being collected into, successively
After being cleaned and crushed with alcohol and deionized water, it is placed in container, then container is placed in drying box, is dried at 60 DEG C,
Being dried to can be untill grind into powder；Dried leaf fragment grinding is taken out, then by the powder after grinding through 1200 mesh
~1600 mesh are sieved and are dispersed in alcohol, and suction filtration is carried out with 10 microns of the filter membrane in aperture, then filtrate is carried out into redrying,
It is standby in the drying box for being stored in 40 DEG C by final dried leaf powder.
The conductive substrate can be sheet metal or conductive film.
The Top electrode can be the metal or conductive oxide beyond silver；Dielectric layer can be other plants beyond leaf
The leaf of thing, stem, pericarp.
The beneficial effects of the present invention are：The present invention prepares ultra-fine leaf powder using partition method, and in conductive base
Leaf film is prepared on piece, further make use of waste to prepare useful device, waste product utilization is added；Therefore, present invention system
Standby memory resistor can realize the secondary utilization of waste, and manufacturing cost is very low, while the device being prepared into has preferably
Room temperature memristor characteristic, and cyclical stability is good, can be used in preparing the archetype of memristor memory.It can realize higher
The switch performance of ratio, and low cost, have extended cycle life.
Brief description of the drawings
Fig. 1 is to extract ultra-fine leaf powder by partition method and prepare the flow chart of memory resistor；
Fig. 2 is XRD, XPS and EDX collection of illustrative plates of the ultra-fine leaf powder extracted；
Fig. 3 is the XPS collection of illustrative plates of the essential element of the ultra-fine leaf powder extracted；
The memristor effect of memory resistors of the Fig. 4 to prepare is characterized；
The storage performance of memory resistors of the Fig. 5 to prepare is characterized.
Embodiment
In order that the object, technical solutions and advantages of the present invention are clearer, below in conjunction with accompanying drawing the present invention is made into
The detailed description of one step, wherein：
Hereinafter with reference to accompanying drawing, the present invention is described in detail.
Fig. 1 is the flow chart that ultra-fine leaf powder is extracted by partition method, and preparation structure is silver/tree on conductive substrate
The flow chart of leaf/FTO memory resistors.As shown in figure 1, the preparation method of the silver/leaf/FTO memory resistors of the present embodiment, including
Following steps：
Step 1: collecting enough withered leaves；
Step 2: the leaf that step one is collected into successively with alcohol and deionized water by collect come leaf clean some
It is secondary, shredded, be placed in beaker with scissors afterwards, is then placed in drying box, it is dried for a week at 60 DEG C more than, be dried to
Untill being enough grind into powder；Then dried leaf fragment is ground, then by the powder after grinding through 1200 mesh~
1600 mesh sieve and are dispersed in alcohol, carry out suction filtration with 10 microns of the filter membrane in aperture, filtrate is carried out into redrying again, will
Final dried ultra-fine leaf powder is stored in 40 DEG C of drying box, with standby.
Step 3: the ultra-fine leaf powder that step 2 is obtained is dissolved in ethyl cellulose solution, colloid is prepared into；
Step 4: by adulterate fluorine tin ash (SnO2) transparent conducting glass (FTO) cooks substrate, it will be walked using spin-coating method
Rapid three colloids prepared in the conductive one side of FTO substrates spin coating into film as dielectric layer；
Step 5: the substrate with dielectric layer that step 4 is obtained, is dried more than 12 hours in 60 DEG C of dry bath case；
Step 6: the substrate after being dried in step 5 is put into vacuum deposition device；
Step 7: it is silver-colored as Top electrode in the surface deposited metal of substrate dielectric layer by vacuum deposition method, had
The memory resistor of silver/leaf/FTO structures.
Fig. 2 (a) is X-ray diffraction (XRD) collection of illustrative plates for the ultra-fine leaf powder that embodiment is extracted, and is extracted as seen from the figure
The main component of ultra-fine leaf powder out is carbon.Fig. 2 (b) is the X-ray photoelectricity for the ultra-fine leaf powder that embodiment is extracted
Sub- power spectrum (XPS) figure, illustration therein is energy dispersion X-ray spectrum (EDX) elementary analysis figure, as seen from the figure, is extracted
Ultra-fine leaf powder out is mainly included outside carbon (C) and oxygen (O) element, also containing metals such as silicon (Si), calcium (Ca), potassium (K)
Element, then without other impurities element, meet the chemical element that common leaf is included.
Fig. 3 (a)-(d) is the XPS amplification collection of illustrative plates of tetra- elements of C, O, Si, Ca respectively, and wherein C and O are the masters for constituting leaf
Element is wanted, Si, Ca, K element are to be contained in the trace element inside leaf.
Fig. 4 is the storage performance phenogram of prepared memory resistor, and in memristor performance test, FTO electro-conductive glass is direct
As bottom electrode, with area about 8mm2The silver of shape is as Top electrode, using electrochemical workstation as the test two-used table of Current Voltage,
Constitute test circuit and carry out memristor performance test, its result is as follows：
Fig. 4 (a) is test circuit in electric current-voltage (I-V) figure that voltage scan range is that -1.5V arrives 1.5V, Fig. 4 (b)
It is the I-V diagram that it utilizes logarithmic coordinates to characterize accordingly, this it appears that prepared memory resistor has well from figure
Memristor effect, its be mutated (Set) and reset (Reset) process clearly.
Fig. 5 (a) is high low resistance state-cycle-index figure of memory resistor, as seen from the figure, the height of the memory resistor
Resistance ratios are about 30, and its cyclical stability is good, do not have any decay after 50 circulations.Fig. 5 (b) is the memory resistor
High-resistance resistors (RHRS) and low resistance state resistance (RLRS) respectively 0.5V bias under high low resistance state-time diagram, can be seen by figure
Go out, after it is switched 500 seconds, substantially without any decay.
It can be proved by above-mentioned experiment, the ultra-fine leaf powder that embodiment is prepared has good memristor storage
Effect, the memory resistor can realize preferable room temperature memristor storage characteristics and cyclical stability is good.
In the present invention, conductive substrate is not limited to FTO electro-conductive glass, and other sheet metals or conductive film can also be used for this hair
It is bright；Top electrode is also not necessarily limited to silver, and other metals or conductive oxide can be used in the present invention；Dielectric layer is also not limited to leaf,
Other plant leaf, stem, pericarp can be used in the present invention by proper treatment.
Finally illustrate, the above embodiments are merely illustrative of the technical solutions of the present invention and it is unrestricted, although pass through ginseng
According to the optimization experiment of the present invention, invention has been described, it should be appreciated by those of ordinary skill in the art that can be with
Various changes are made to it in the form and details, without departing from appended claims limited it is of the invention
Spirit and scope.
Claims (4)
1. a kind of preparation method of memory resistor, comprises the following steps：
Step 1: collecting enough withered leaves；
Step 2: the leaf that step one is collected into obtains ultra-fine leaf powder by partition method, it is standby；
Step 3: the ultra-fine leaf powder that step 2 is obtained is dissolved in ethyl cellulose solution, colloid is prepared into；
Step 4: substrate is done with the tin dioxide transparent conductive glass FTO of doping fluorine, the glue for being obtained step 3 using spin-coating method
Body is used as dielectric layer in the conductive one side spin coating of substrate into film；
Step 5: by the substrate with dielectric layer obtained in step 4, being dried more than 12 hours in 60 DEG C of dry bath case；
Step 6: the substrate after being dried in step 5 is put into vacuum deposition device；
Step 7: the surface deposited metal silver of substrate upper dielectric layer is done into Top electrode by vacuum deposition method, obtain with silver/tree
The memory resistor of leaf/FTO structures.
2. a kind of preparation method of memory resistor according to claim 1, it is characterised in that：It is described to be obtained by partition method
The specific method of ultra-fine leaf powder is：By the withered leaf being collected into, cleaned and crushed with alcohol and deionized water successively
Afterwards, it is placed in container, then container is placed in drying box, is dried at 60 DEG C, being dried to can be untill grind into powder；Take
Go out dried leaf fragment grinding, then by the powder after grinding through 1200 mesh~1600 mesh sieve and be dispersed in alcohol,
Suction filtration is carried out with 10 microns of the filter membrane in aperture, then filtrate is subjected to redrying, final dried leaf powder is preserved
It is standby in 40 DEG C of drying box.
3. a kind of preparation method of memory resistor according to claim 1, it is characterised in that：The conductive substrate can be
Sheet metal or conductive film.
4. a kind of preparation method of memory resistor according to claim 1, it is characterised in that：The Top electrode can be silver
Metal or conductive oxide in addition；Dielectric layer can be the leaf, stem, pericarp of the other plant beyond leaf.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447985A (en) * | 2018-04-10 | 2018-08-24 | 西南交通大学 | A kind of preparation method of the biological memristor based on banana skin |
| CN108615810A (en) * | 2018-04-10 | 2018-10-02 | 西南交通大学 | A kind of memristor at room temperature and negative capacitance effect stablize the preparation method that device coexists |
| CN108666418A (en) * | 2018-04-27 | 2018-10-16 | 西南交通大学 | A kind of preparation method of memory resistor |
| CN108754574A (en) * | 2018-06-14 | 2018-11-06 | 西南交通大学 | A kind of preparation method of glassy yellow memristor |
| CN108831994A (en) * | 2018-06-25 | 2018-11-16 | 西南交通大学 | A kind of preparation method of the biological memristor based on garlic |
| CN109244235A (en) * | 2018-07-30 | 2019-01-18 | 西南交通大学 | A kind of application of reindeer moss as memory resistor dielectric layer |
| CN109309157A (en) * | 2018-09-11 | 2019-02-05 | 西南交通大学 | A kind of preparation method of the flexible biological memristor based on mushroom powder |
| CN109599488A (en) * | 2018-11-06 | 2019-04-09 | 西南交通大学 | A kind of hair is preparing the application in memristor |
| CN110514327A (en) * | 2019-08-29 | 2019-11-29 | 电子科技大学 | A kind of pliable pressure sensor and preparation method thereof based on organic field effect tube |
| CN111092097A (en) * | 2019-12-17 | 2020-05-01 | 西交利物浦大学 | RRAM based on biological material and preparation method thereof |
| CN113488587A (en) * | 2021-03-26 | 2021-10-08 | 黑龙江大学 | CRS resistive random access memory based on silver and graphene oxide and preparation method thereof |
| CN113594363A (en) * | 2021-07-30 | 2021-11-02 | 华中科技大学 | Environment-friendly cellulose-based self-supporting memristor and preparation method thereof |
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| CN102610752A (en) * | 2012-03-23 | 2012-07-25 | 清华大学深圳研究生院 | Method for manufacturing memory resistor through three-dimensional maskless slurry direct writing forming and memory resistor |
| CN105161615A (en) * | 2015-09-06 | 2015-12-16 | 中南大学 | Memristor based on fiber substrate and preparation method of memristor |
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| CN102610752A (en) * | 2012-03-23 | 2012-07-25 | 清华大学深圳研究生院 | Method for manufacturing memory resistor through three-dimensional maskless slurry direct writing forming and memory resistor |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108447985A (en) * | 2018-04-10 | 2018-08-24 | 西南交通大学 | A kind of preparation method of the biological memristor based on banana skin |
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| CN109599488A (en) * | 2018-11-06 | 2019-04-09 | 西南交通大学 | A kind of hair is preparing the application in memristor |
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| CN113488587A (en) * | 2021-03-26 | 2021-10-08 | 黑龙江大学 | CRS resistive random access memory based on silver and graphene oxide and preparation method thereof |
| CN113488587B (en) * | 2021-03-26 | 2023-06-06 | 黑龙江大学 | CRS resistive random access memory based on silver and graphene oxide and preparation method thereof |
| CN113594363A (en) * | 2021-07-30 | 2021-11-02 | 华中科技大学 | Environment-friendly cellulose-based self-supporting memristor and preparation method thereof |
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Application publication date: 20170714 |