CN103236499B - A kind of unipolar memristor and preparation method thereof - Google Patents
A kind of unipolar memristor and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of monopole type nano-film memristor, the Ba comprising two electrodes and be placed in one
(1-x)sr
xtiO
3-δnano thin-film, wherein, 0 & lt; X & lt; 1,0 & lt; δ & lt; 3; The principal crystalline phase that X-ray diffraction records described film is Ba
(1-x)sr
xtiO
3, actual in being rich in the Ba of oxygen defect and Lacking oxygen
(1-x)sr
xtiO
3-δ; Described film is single thin film structure, and thickness is 20-800 nanometer.The invention also discloses a kind of preparation method of monopole type nano-film memristor.Monopole type nano-film memristor of the present invention is specially adapted to general circuit theoretical research and circuit design, have generality and universality, cheap and be easy to the unipolar memristor of physics realization.
Description
Technical field
The present invention relates to nonlinear circuit application, be specifically related to a kind of unipolar memristor and preparation method thereof.
Background technology
As far back as 1971, international nonlinear circuit and the theoretical pioneer of cell neural network, the LeonChua (Cai Shaotang) in California, USA university Berkeley branch school, based on Circuit theory integrality in logic, foretells the existence of the 4th primary element-memristor in circuit except resistance, electric capacity, inductance theoretically.In May, 2008, the researcher of HP Lab successfully achieves first workable memristor prototype in the world, thus confirms the theory of Chua about memristor, causes worldwide strong interest.Because memristor has non-volatile, synaptic function and nano-scale structures, at high-density nonvolatile memory, artificial neural net, large scale integrated circuit, reconfigurable logic and FPGA (Field Programmable Gate Array), bioengineering, pattern recognition, the fields such as signal transacting have huge application prospect, will be unlimited for manufacturing storage precision, the non-volatile memory device of superelevation storage density, the development with the analog computer of artificial neural net and the process of similar human brain mode and the contact details that synapse can be regulated to weigh etc. is paved the way, revolutionary change is brought to the manufacture of computer and operational mode.As a kind of new basic circuit elements, the appearance of memristor adds the variation of circuit element, for Circuit theory research and circuit design provide a kind of brand-new development space.
Along with the discovery of HP memristor, be engaged in resistive scientific research institution and the scholar storing research more in the world and also in succession carried out research about memristor aspect in kind, constantly have new recalling resistance material and recall resistance body system report.Current research is recalled the mechanism of resistive energy from realization, can be divided into based on boundary migration model, based on electron spin blocking model, based on Transformation Mechanism, based on silk conductive mechanism etc.The domestic research to memristor is also fewer at present, mostly lays particular emphasis on and recall resistance circuit and systematic research in existing research.Although memristor research in recent years achieves larger progress, we also will see, as a basic circuit element, memristor research is just at the early-stage, is mainly manifested in the following aspects:
(1) constantly have in recent years and new recall resistance material and recall resistance body system report, but the memristor model of physics realization at present also seldom and relatively single (mostly being bipolar device), there is no unified Universal Model and be described memristor behavior.
The memristor in kind reported in recent years is mostly applied for certain class or is simulated certain function (as high-density nonvolatile memory, CrossbarLatch technology, analog neuron cynapse) and propose, the switch models of bipolarity resistive behavior that what most employing and HP memristor were similar have (i.e. its resistive behavior and added polarity of voltage about) and working mechanism, and complex manufacturing technology, cost are high, for research memristor characteristic, recall the theoretical and design of electronic circuits of resistance circuit etc. not there is generality and universality.
(2) as the basic circuit elements that a class is novel, the memristor with the behavior of unipolarity resistive has nothing to do because of its resistive behavior and added polarity of voltage, for memristor specificity analysis and general circuit theoretical research and circuit design, have more generality and universality.But rarely have monopole type memristor report in kind at present.People are recalling resistance behavior to the Research foundation of resistance-variable storing device has found, resistive research is the experiment basis recalling resistance discovery.And research and physics realization have the memristor in kind of unipolarity resistive behavior, for memristor specificity analysis and general circuit theoretical research and circuit design, have more generality and universality, have great importance.Document [T.Driscoll, H.T.Kim, B.G.Chae, etal., Phase-transitiondrivenmemristivesystem.Appl.Phys.Lett, 2009,95 (4): 043505] the VO2 memristor based on Transformation Mechanism reported, though be unipolar memristor, but recall inhibition effect based on metal-insulator phase transition due to this memristor, and phase transition process needs uniform temperature condition, therefore this memristor has a critical defect: only could realize it and recall inhibition effect in certain temperature range.
(3) not yet realize at present commercially producing.Most researchers is difficult to the real memristor element of acquisition one, cause Many researchers when studying memristor and recalling resistance circuit, the hardware experiments cannot carried out in real physical meaning in default of memristor element is more rely on emulation or analog circuit to carry out experimental study.But, memristor simulation model and analog circuit from reality memristor different from those very away from, being also simulation memristor Mathematical Modeling of the more considerations of the hardware implementing carried out with analog circuit and have ignored the essential physical characteristic of memristor.
Summary of the invention
The technical problem to be solved in the present invention is to provide and is a kind ofly specially adapted to general circuit theoretical research and circuit design, have generality and universality, cheap and be easy to the unipolar memristor of physics realization.
Monopole type nano-film memristor of the present invention, the Ba comprising two electrodes and be placed in therebetween
(1-x)sr
xtiO
3-δnano thin-film, wherein, 0<x<1,0< δ <3.
Monopole type nano-film memristor of the present invention, wherein X-ray diffraction records the principal crystalline phase of described film is Ba
(1-x)sr
xtiO
3, application ac impedance spectroscopy discloses its ppm level electric microstructure property, can find that this film is actual in being rich in the Ba of oxygen defect and Lacking oxygen
(1-x)sr
xtiO
3-δ.
Monopole type nano-film memristor of the present invention, wherein said film is single thin film structure, and thickness is 20-800 nanometer.This memristor is a kind of monofilm memristor based on new model, and it is with the duplicature to have reported and even multilayer film memristor structure compared and manufacture craft is simple, cost is low, be convenient to industrialization produces.Meanwhile, because it is monofilm memristor and without switching effect, its resistive behavior is the unipolarity resistive behavior irrelevant with added polarity of voltage, for memristor specificity analysis and general circuit theoretical research and circuit design, have more generality and universality.
Monopole type nano-film memristor of the present invention, wherein said memristor with the hole produced under bias voltage and ionized oxygen ion for charge carrier, under electric field action, rely on the change of described hole and described ionized oxygen ion generation amount to realize the change of device resistance, and its resistive behavior and added polarity of voltage have nothing to do, and are the behavior of unipolarity resistive.
A kind of Ba
(1-x)sr
xtiO
3-δthe preparation method of nano thin-film, comprises the steps:
(1) by barium acetate Ba (CH
3cOO)
2with strontium acetate Sr (CH
3cOO)
2by the mixed in molar ratio of (1-x): x, be dissolved in glacial acetic acid CH
3cOOH, stirs 15-30min and obtains compound;
(2) in compound in final stoicheiometry Ba:Ti=(1-x): the ratio of 1, adds butyl titanate Ti (OC
4h
9)
4, stir 30-60min, filter;
(3) in the solution after filtration, glacial acetic acid CH is added
3cOOH by solution dilution, in order to improve plated film efficiency and quality sorting solution dilution after concentration slightly high, be 0.2-0.5mol/L, for subsequent use as precursor sol after filtration;
(4) plated film: by single crystalline Si or Al
2o
3substrate immerses in described precursor sol, obtains dissolved glue film, is dried by described dissolved glue film afterwards, makes sol-hydrolysis, obtain gel film;
(5), after repeating step (4) 3-10 time, the gel mould finally obtained is heat-treated, obtains the film of 20-800 nano thickness.
Ba of the present invention
(1-x)sr
xtiO
3-δthe preparation method of nano thin-film, the film plating process wherein in step (4) adopts czochralski method: immersed by substrate in described precursor sol, the speed with 0.5-1cm/s after 10-60s vertically lifts, horizontal, obtains dissolved glue film, is dried by described dissolved glue film afterwards, make sol-hydrolysis, obtain gel film.
Ba of the present invention
(1-x)sr
xtiO
3-δthe preparation method of nano thin-film, the film plating process wherein in step (4) adopts spin-coating method: be first fixed on sol evenning machine by substrate, then is coated on substrate by precursor sol rotation, and rotating speed is 3000-8000r/min, and time 30-60s, obtains dissolved glue film; Afterwards described dissolved glue film is dried, make sol-hydrolysis, obtain gel film.
Ba of the present invention
(1-x)sr
xtiO
3-δthe preparation method of nano thin-film, wherein, has solute to separate out after preventing solution left standstill, also comprises and add acetylacetone,2,4-pentanedione CH in step (1) before stirring
3cOCH
2cOCH
3used as stabilizers, addition is the 5%-20% of quality of acetic acid.
Ba of the present invention
(1-x)sr
xtiO
3-δthe preparation method of nano thin-film, wherein, described dissolved glue film is dried 10-20min in (4) by step at 100-150 DEG C, under this bake out temperature temperature retention time condition, both ensured that dissolved glue film was transformed into efficiency and the quality of gel mould, and avoided again the too high or overlong time of temperature to cause gel mould to damage; In step (5), described gel mould is at 700-800 DEG C of heat treatment 10-30min, under this heat treatment temperature and temperature retention time condition, both efficiency and the quality of gel mould dense sintering had been ensured, avoid again the too low and too short film of temperature retention time of temperature fine and close not, or temperature is too high and temperature retention time is long causes the damage of film and electrode to be out of shape.
A preparation method for monopole type nano-film memristor, comprises the steps: first at single crystalline Si or Al
2o
3substrate plates one deck electrode, then by Ba of the present invention
(1-x)sr
xtiO
3-δthe preparation method of nano thin-film plates Ba on electrode
(1-x)sr
xtiO
3-δnano thin-film, finally at Ba
(1-x)sr
xtiO
3-δnano thin-film plates one deck electrode again.Wherein, thickness of electrode is according to actual needs between 50nm-50um, and electrode material is Au, Ag, In-Ga or Pt.
Provided by the invention based on Ba
(1-x)sr
xtiO
3-δthe memristor of nano thin-film, it recalls resistance mechanism and Mathematical Modeling is specially:
This memristor is by the individual layer Ba be sandwiched between two electrodes
(1-x)sr
xtiO
3-δnano thin-film is formed.When a voltage or electric current are added on this device, because film thickness is nanoscale, very little voltage will produce huge electric field, Ba
(1-x)sr
xtiO
3-δo can be there is under bias in the surface contacted with air with the oxygen in air
2+ 4e
--→ 2O
2-reaction, and make to produce hole in film.Meanwhile, generation O is affected in film inside by bias effect
2--→ e
-+ O
-, hole and ionized oxygen ion (O
-) as principal carrier displacement under electric field action, along with hole and ionized oxygen ion (O
-) resistance variations that the change of generation can cause between two electrodes, corresponding film presents minimum (R with it
min) or maximum (R
max) two kinds of different resistance, this is Ba
(1-x)sr
xtiO
3-δrepresent the mechanism recalling resistance characteristic.Now represent a certain moment Ba with O (t)
(1-x)sr
xtiO
3-δthe hole amount produced under bias, the maximum void amount that M produces under representing bias effect, v produces the speed in hole under representing bias effect.Due to hole and ionized oxygen ion (O
-) generation with by its size of current and the duration (i.e. charge accumulated) relevant:
, that is:
.Therefore, film resistor is its function by electric charge: work as R
min<<R
maxtime,
.Because bias voltage (electric current) interrupts without driving electric field in rear film, and the motion such as each ion, electronics, hole is at normal temperatures inactive, hole and ionized oxygen ion (O in film
-) measure and cannot return the front state of biasing (electric current passes through), resistance when therefore there is memory effect and keep bias voltage (electric current) to interrupt.
Monopole type nano-film memristor of the present invention and preparation method thereof difference from prior art is that the present invention proposes and physics realization one class manufacture craft is simple, cost is low, is easy to realize and has more the novel passive of generality and universality and without the unipolar memristor element of rectifying effect, adopt based on Ba
(1-x)sr
xtiO
3-δthe single-layer membrane structure of material, the behavior of unipolarity resistive, recalls resistance mechanism and the unique novel feature of Mathematical Modeling; This invention simplifies the manufacture craft of nanometer memristor element, reduce manufacturing cost, be specially adapted to general circuit theoretical research and circuit design, specifically have the following advantages:
Based on Ba
(1-x)sr
xtiO
3-δthe memristor of material, its working mechanism and Mathematical Modeling are novel, and have the behavior of unipolarity resistive and have more generality and universality.Ba of the present invention
(1-x)sr
xtiO
3-δmemristor is a class based under bias with hole and ionized oxygen ion (O
-) carry out the solid electrolyte memristor that conducts electricity for charge carrier.Such memristor has abandoned TiO
2memristor, WO
3memristor, Ag/Ag
2the rectified action of S memristor and Ag/Si memristor, not research and develop for computer memory system or human mind system, without special purpose or application background, that one changes with the sub-generation of bias voltage download stream, and the passive electric circuit element of the unipolarity resistive behavior causing its resistance to change (namely its resistive behavior and added polarity of voltage have nothing to do).As a kind of basic passive electric circuit element, unipolar memristor for research memristor characteristic, recall the theoretical and design of electronic circuits of resistance circuit etc. and have more generality and universality.
Ba of the present invention
(1-x)sr
xtiO
3-δmemristor manufacture craft is simple, cost is low, is easy to carry out physics realization, and described memristor belongs to single-layer membrane structure, adopts combination of sol-gel lift or spin-coating method plated film to realize Ba
(1-x)sr
xtiO
3-δthe making of nano thin-film.In whole preparation process, only need colloidal sol preparation, preparation that plated film, gel three step can realize nano thin-film, enormously simplify manufacture craft; Secondly, film preparation only needs collosol and gel platform and thermostatic drying chamber to complete, and equipment is extremely simple; Meanwhile, prepare raw material needed for film and be general chemical medicament, cheap.Therefore, the Ba of invention
(1-x)sr
xtiO
3-δmemristor manufacture craft compared with the memristor reported at present is simple, and manufacturing cost is greatly diminished, and is easy to physics realization.
Below in conjunction with accompanying drawing to Ba of the present invention
(1-x)sr
xtiO
3-δmemristor is described further.
Accompanying drawing explanation
Fig. 1 is the monopole type nano-film memristor structural representation under one embodiment of the present invention;
Fig. 2 is the Mathematical Modeling of monopole type nano-film memristor M (q) of the present invention;
Embodiment
Embodiment 1
As shown in Figure 1, the nano thin-film structure 2 that monopole type nano-film memristor of the present invention comprises two electrodes 1 and is placed in one, Fig. 2 is the Mathematical Modeling of monopole type nano-film memristor M (q) of the present invention, and the preparation method of described nano thin-film structure 2 is as follows:
(1) by barium acetate Ba (CH
3cOO)
2with strontium acetate Sr (CH
3cOO)
2by the mixed in molar ratio of 9:1, be dissolved in acetic acid CH
3cOOH, adds appropriate acetylacetone,2,4-pentanedione CH
3cOCH
2cOCH
3used as stabilizers, stirs 15min and obtains compound;
(2) again in compound in the ratio of final stoicheiometry Ba:Ti=9:10, add butyl titanate Ti (OC
4h
9)
4, stir 30min, filter;
(3) in the solution after filtration, appropriate glacial acetic acid CH is added
3cOOH is diluted to 0.3mol/L, for subsequent use as presoma after filtration;
(4) immerse in precursor sol by substrate, the speed with 1cm/s after 30s vertically lifts, and horizontal obtains dissolved glue film, and dissolved glue film dries 15min at 120 DEG C, makes sol-hydrolysis, obtains gel film;
(5) step (4) is repeated after 10 times, by the gel mould that finally obtains at 700-750 DEG C of heat treatment 10-30min, obtain the product that thickness is 20-800 nanometer.
Embodiment 2
Add in composition of raw materials, barium acetate: strontium acetate: butyl titanate=8:2:10(mol ratio), other are with embodiment 1.
Embodiment 3
Add in composition of raw materials, barium acetate: strontium acetate: butyl titanate=7:3:10(mol ratio), the mixing time in step (1) is 30min; Acetylacetone,2,4-pentanedione addition is 5% of quality of acetic acid; Mixing time in step (2) is 40min; Glacial acetic acid concentration in step (3) is 0.5mol/L; In step (4), immersed by substrate in precursor sol, the speed with 0.5cm/s after 60s vertically lifts, and described dissolved glue film dries 10min at 100 DEG C, and in step (5), number of repetition is 3, and gel mould is at 700 DEG C of heat treatment 10min, and other are with embodiment 1.
Embodiment 4
Add in composition of raw materials, barium acetate: strontium acetate: butyl titanate=6:4:10(mol ratio), the mixing time in step (1) is 20min; Acetylacetone,2,4-pentanedione addition is 20% of quality of acetic acid; Mixing time in step (2) is 60min; Glacial acetic acid concentration in step (3) is 0.2mol/L; Film plating process in step (4) adopts spin-coating method plated film: be first fixed on sol evenning machine by substrate, being rotated by precursor solution is coated on substrate again, rotating speed is 3000r/min, time 60s, obtain dissolved glue film, described dissolved glue film dries 20min at 150 DEG C, and in step (5), number of repetition is 5, gel mould is at 800 DEG C of heat treatment 30min, and other are with embodiment 1.
Embodiment 5
Add in composition of raw materials, barium acetate: strontium acetate: butyl titanate=5:5:10(mol ratio), the mixing time in step (1) is 25min; Acetylacetone,2,4-pentanedione addition is 15% of quality of acetic acid; Mixing time in step (2) is 50min; Glacial acetic acid concentration in step (3) is 0.4mol/L; Film plating process in step (4) adopts spin-coating method plated film: be first fixed on sol evenning machine by substrate, being rotated by precursor solution is coated on substrate again, rotating speed is 8000r/min, time 30s, obtain dissolved glue film, described dissolved glue film dries 10min at 100 DEG C, and in step (5), number of repetition is 8, gel mould is at 750 DEG C of heat treatment 20min, and other are with embodiment 1.
Embodiment 6
Add in composition of raw materials, barium acetate: strontium acetate: butyl titanate=4:6:10(mol ratio), other are with embodiment 1.
Embodiment 7
Add in composition of raw materials, barium acetate: strontium acetate: butyl titanate=3:7:10(mol ratio), other are with embodiment 1.
Embodiment 8
Add in composition of raw materials, barium acetate: strontium acetate: butyl titanate=2:8:10(mol ratio), other are with embodiment 1.
Embodiment 9
Add in composition of raw materials, barium acetate: strontium acetate: butyl titanate=1:9:10(mol ratio), other are with embodiment 1.
A preparation method for monopole type nano-film memristor, comprises the steps: first at single crystalline Si or Al
2o
3substrate plates one deck electrode, then by Ba of the present invention
(1-x)sr
xtiO
3-δthe preparation method of nano thin-film plates Ba on electrode
(1-x)sr
xtiO
3-δnano thin-film, finally at Ba
(1-x)sr
xtiO
3-δnano thin-film plates one deck electrode again.Wherein, thickness of electrode is according to actual needs between 50nm-50um, and electrode material is Au, Ag, In-Ga or Pt.
Embodiment 10 ~ 15 is Ba
(1-x)sr
xtiO
3-δthe top electrode process of nano thin-film, all adopt the formula of example 2, the technological parameter in the preparation process of example 10 ~ 15 is as shown in table 1.
The technological parameter of table 1 example 10 ~ 15
| Example number | Electrode material | Top electrode mode | Heat treatment temperature (DEG C) |
| Embodiment 10 | Au | Printing | 800 |
| Embodiment 11 | Au | Deposition | Room temperature |
| Embodiment 12 | Ag | Printing | 600 |
| Embodiment 13 | In-Ga | Printing | Room temperature |
| Embodiment 14 | Pt | Printing | 900 |
| Embodiment 15 | Pt | Deposition | Room temperature |
Above-described embodiment is only be described the preferred embodiment of the present invention; not scope of the present invention is limited; under not departing from the present invention and designing the prerequisite of spirit; the various distortion that those of ordinary skill in the art make technical scheme of the present invention and improvement, all should fall in protection range that claims of the present invention determines.
Claims (7)
1. a monopole type nano-film memristor, is characterized in that: the Ba comprising two electrodes and be placed in therebetween
(1-x)sr
xtiO
3-δnano thin-film, wherein, 0<x<1,0< δ <3; Wherein, described Ba
(1-x)sr
xtiO
3-δnano thin-film is single thin film structure, and thickness is 20-800 nanometer;
Described Ba
(1-x)sr
xtiO
3-δnano film thickness is nanoscale, and very little voltage will produce huge electric field, Ba
(1-x)sr
xtiO
3-δo can be there is under bias in the surface contacted with air with the oxygen in air
2+ 4e
-→ 2O
2-reaction, and make to produce in film hole, meanwhile, affect by bias effect in film inside and O occurs
2-→ e
-+ O
-reaction, hole and ionized oxygen ion O
-as principal carrier displacement under electric field action, along with hole and ionized oxygen ion O
-the change of generation can cause the resistance variations between two electrodes, with it corresponding described Ba
(1-x)sr
xtiO
3-δnano thin-film presents minimum or maximum two kinds of different resistance.
2. monopole type nano-film memristor according to claim 1, is characterized in that: the principal crystalline phase that X-ray diffraction records described film is Ba
(1-x)sr
xtiO
3, actual in being rich in the Ba of oxygen defect and Lacking oxygen
(1-x)sr
xtiO
3-δ.
3. monopole type nano-film memristor according to claim 2, it is characterized in that: described memristor with the hole produced under bias voltage and ionized oxygen ion for charge carrier, under electric field action, rely on the change of described hole and described ionized oxygen ion generation amount to realize the change of device resistance, and its resistive behavior and added polarity of voltage have nothing to do, and are the behavior of unipolarity resistive.
4. the Ba described in above-mentioned any claim
(1-x)sr
xtiO
3-δthe preparation method of nano thin-film, is characterized in that, comprises the steps:
(1) barium acetate and strontium acetate are pressed the mixed in molar ratio of (1-x): x, be dissolved in glacial acetic acid, stir 15-30min and obtain compound;
(2) in compound in final stoicheiometry Ba:Ti=(1-x): the ratio of 1 adds butyl titanate, stir 30-60min, filter;
(3) in the solution after filtration, glacial acetic acid is added by solution dilution to 0.2-0.5mol/L, for subsequent use as precursor sol after filtration;
(4) plated film: by single crystalline Si or Al
2o
3substrate immerses in described precursor sol, obtains dissolved glue film, is dried by described dissolved glue film afterwards, makes sol-hydrolysis, obtain gel film;
(5), after repeating step (4) 3-10 time, the gel mould finally obtained is heat-treated, obtains the film of 20-800 nano thickness;
Wherein, also comprise before stirring in step (1) and add acetylacetone,2,4-pentanedione used as stabilizers, addition is the 5%-20% of quality of acetic acid; In step (4), described dissolved glue film is dried 10-20min at 100-150 DEG C; In step (5), described gel mould is at 700-800 DEG C of heat treatment 10-30min.
5. preparation method according to claim 4, it is characterized in that: the film plating process in step (4) adopts czochralski method: immersed by substrate in described precursor sol, speed with 0.5-1cm/s after 10-60s vertically lifts, horizontal, obtain dissolved glue film, afterwards described dissolved glue film is dried, make sol-hydrolysis, obtain gel film.
6. preparation method according to claim 4, it is characterized in that: the film plating process in step (4) adopts spin-coating method: be first fixed on sol evenning machine by substrate, being rotated by precursor sol is coated on substrate again, rotating speed is 3000-8000r/min, time 30-60s, obtains dissolved glue film, is dried by described dissolved glue film afterwards, make sol-hydrolysis, obtain gel film.
7. a preparation method for monopole type nano-film memristor, is characterized in that: comprise the steps:
First at single crystalline Si or Al
2o
3substrate plates one deck electrode, on electrode, plate Ba by the mode of claim 4 afterwards
(1-x)sr
xtiO
3-δnano thin-film, finally at Ba
(1-x)sr
xtiO
3-δnano thin-film plates one deck electrode again; Wherein, described thickness of electrode is according to actual needs between 50nm-50um, and electrode material is Au, Ag, In-Ga or Pt.
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| CN105591028B (en) * | 2016-01-21 | 2018-02-06 | 山东科技大学 | A kind of preparation method using LTCC greens band as the single-layer nano-film memristor of substrate |
| CN105742487B (en) * | 2016-01-21 | 2018-02-06 | 山东科技大学 | A kind of preparation method of ambipolar nano-film memristor |
| CN110428049B (en) * | 2019-08-21 | 2021-10-26 | 南京邮电大学 | Voltage type neural network based on polymorphic memristor and operation method thereof |
| CN110647982B (en) * | 2019-09-26 | 2022-04-15 | 中国科学院微电子研究所 | Artificial sensory nerve circuit and preparation method thereof |
| CN111430538B (en) * | 2020-03-31 | 2022-04-08 | 清华大学 | Flexible memristor based on weaving type and preparation method thereof |
| CN112687794B (en) * | 2020-12-28 | 2024-03-19 | 山东科技大学 | Flexible memristor with self-repairing capability and preparation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101074491A (en) * | 2007-03-29 | 2007-11-21 | 上海大学 | Method for growing barium strontium titanate on metal titanium-based substrate |
| CN101708990A (en) * | 2009-11-27 | 2010-05-19 | 电子科技大学 | Method for preparing nano-crystalline BST film |
| CN102270738A (en) * | 2010-06-03 | 2011-12-07 | 北京大学 | Manufacturing method of memory unit comprising resistor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| TW345723B (en) * | 1996-07-09 | 1998-11-21 | Hitachi Ltd | Semiconductor memory and process for producing the same |
| US20090186443A1 (en) * | 2008-01-22 | 2009-07-23 | International Business Machines Corporation | Method to enhance performance of complex metal oxide programmable memory |
| US8791447B2 (en) * | 2011-01-20 | 2014-07-29 | Micron Technology, Inc. | Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101074491A (en) * | 2007-03-29 | 2007-11-21 | 上海大学 | Method for growing barium strontium titanate on metal titanium-based substrate |
| CN101708990A (en) * | 2009-11-27 | 2010-05-19 | 电子科技大学 | Method for preparing nano-crystalline BST film |
| CN102270738A (en) * | 2010-06-03 | 2011-12-07 | 北京大学 | Manufacturing method of memory unit comprising resistor |
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