CN103594620B - A kind of single-layer nano-film memristor and preparation method thereof - Google Patents
A kind of single-layer nano-film memristor and preparation method thereof Download PDFInfo
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- CN103594620B CN103594620B CN201310540846.XA CN201310540846A CN103594620B CN 103594620 B CN103594620 B CN 103594620B CN 201310540846 A CN201310540846 A CN 201310540846A CN 103594620 B CN103594620 B CN 103594620B
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Abstract
The invention discloses a kind of single-layer nano-film memristor and preparation method thereof, wherein, single-layer nano-film memristor, comprises two electrodes and is placed in Ca (1-x) Sr being rich in Lacking oxygen between two electrodes
xtiO
3-δnano thin-film, wherein, 0<x<1,0< δ <3; Above-mentioned nano thin-film is monofilm, and thickness is 20-900 nanometer.Single-layer nano-film memristor of the present invention is specially adapted to general circuit theoretical research and circuit design, has generality and universality.The invention also discloses a kind of preparation method of single-layer nano-film memristor, it is with Ca (1-x) Sr
xtiO
3-δmake target, adopt magnetically controlled sputter method at Pt/TiO
2/ SiO
2plated film on/Si substrate, the thickness of plated film is 20 ~ 900nm, then through 700-800 DEG C of heat treatment 10-30min; Again at Ca (1-x) Sr
xtiO
3-δnano thin-film plates one deck electrode; Thickness of electrode is 50nm-50um, and electrode material is Au, Ag, In-Ga or Pt.This preparation method has that technique is simple, target sintering temperature is low, raw materials is easy to technical characterstics such as obtaining, cost is low.
Description
Technical field
The present invention relates to a kind of memristor and preparation method thereof, particularly relate to a kind of single-layer nano-film memristor and preparation method thereof, belong to nonlinear circuit application.
Background technology
As far back as 1971, international nonlinear circuit and the theoretical pioneer of cell neural network, the Leon Chua (Cai Shaotang) of Univ California-Berkeley, based on Circuit theory integrality in logic, foretells the existence of the 4th primary element-memristor in circuit except resistance, electric capacity, inductance theoretically.In May, 2008, the researcher of HP Lab successfully achieves first workable memristor prototype in the world, thus confirms the theory of Leon Chua about memristor, causes worldwide strong interest.
Because memristor has non-volatile, synaptic function and nano-scale structures, at high-density nonvolatile memory, artificial neural net, large scale integrated circuit, reconfigurable logic and FPGA (Field Programmable Gate Array), bioengineering, pattern recognition, the fields such as signal transacting have huge application prospect, will be unlimited for manufacturing storage precision, the non-volatile memory device of superelevation storage density, the development with the analog computer of artificial neural net and the process of similar human brain mode and the contact details that synapse can be regulated to weigh etc. is paved the way, revolutionary change is brought to the manufacture of computer and operational mode.As a kind of new basic circuit elements, the appearance of memristor adds the variation of circuit element, for Circuit theory research and circuit design provide a kind of brand-new development space.
Along with the discovery of HP memristor, be engaged in resistive scientific research institution and the scholar storing research more in the world and also in succession carried out research about memristor aspect in kind, constantly have new recalling resistance material and recall resistance body system report.Current research is recalled the mechanism of resistive energy from realization, can be divided into based on boundary migration model, based on electron spin blocking model, based on Transformation Mechanism, based on silk conductive mechanism etc.The domestic research to memristor is also fewer at present, mostly lays particular emphasis on and recall resistance circuit and systematic research in existing research.Although memristor research in recent years achieves larger progress, we also will see, as a basic circuit element, memristor research is just at the early-stage, is mainly manifested in the following aspects:
(1) constantly have in recent years and new recall resistance material and recall resistance body system report, but the memristor model of physics realization at present also seldom and relatively single, there is no unified Universal Model and be described memristor behavior.
The memristor in kind reported in recent years is mostly for the application of certain class or simulates certain function, as high-density nonvolatile memory, Crossbar Latch(intersect dot matrix gate) technology, analog neuron cynapse, and to propose.It mostly adopts the switch models similar with HP memristor and working mechanism, and complex manufacturing technology, cost are high, for research memristor characteristic, recalls the theoretical and design of electronic circuits of resistance circuit etc. and does not have generality and universality.
(2) not yet realize at present commercially producing.Most researchers is difficult to the real memristor element of acquisition one, cause Many researchers when studying memristor and recalling resistance circuit, the hardware experiments cannot carried out in real physical meaning in default of memristor element is more rely on emulation or analog circuit to carry out experimental study.But, memristor simulation model and analog circuit from reality memristor different from those very away from, being also simulation memristor Mathematical Modeling of the more considerations of the hardware implementing carried out with analog circuit and have ignored the essential physical characteristic of memristor.
Summary of the invention
The object of the invention is, provide a kind of and be specially adapted to general circuit theoretical research and circuit design, there is generality and universality, cheap and be easy to the monofilm memristor of physics realization.
The present invention is the technical scheme solving the problems of the technologies described above employing, a kind of single-layer nano-film memristor, the Ca comprising two electrodes and be placed in therebetween
(1-x)sr
xtiO
3-δnano thin-film, wherein, 0<x<1,0< δ <3.Illustrate: in formula, δ represents the content of oxygen defect and Lacking oxygen.
The technique effect that technique scheme produces is, based on Ca
(1-x)sr
xtiO
3-δthe memristor of material, its working mechanism and Mathematical Modeling novelty, and have more generality and universality.
As preferably, above-mentioned film is single thin film structure, and thickness is 20-900 nanometer.
The technique effect that above-mentioned optimal technical scheme directly produces is, based on the monofilm memristor of new model, the morphological stability of its nano thin-film is good, and relative to the memristor of duplicature and even multilayer film, its structure and manufacture craft is simple, cost is low, be convenient to industrialization produces.
Further preferably, above-mentioned Ca (1-x) Sr
xtiO
3-δraw materials and formula consist of mol ratio (1-x) CaCO
3: xSrCO
3: TiO
3, wherein, 0<x<1; Described Ca (1-x) Sr
xtiO
3-δpreparation method, comprise the steps:
1st step, by CaCO
3, SrCO
3and TiO
3mixing, adds deionized water or absolute ethyl alcohol, ball milling, then dries, obtain compound;
2nd step, adopt mass fraction be the poly-vinyl alcohol solution of 5 ~ 20% as binding agent, the addition of binding agent is treat granulation mixture quality mark 5 ~ 15%, granulation, cross 40 mesh sieves;
3rd step, it is 20 ~ 150mm that the compound after granulation being sieved utilizes tablet press machine to be pressed into diameter, is highly the disk of 2 ~ 50mm;
4th step, sinters 15 ~ 240min by the sample after compressing tablet, cools to room temperature with the furnace at 900 ~ 1300 DEG C.
The technique effect that above-mentioned optimal technical scheme directly produces is, Ca (1-x) Sr being used as one of the critical component of memristor target prepared
xtiO
3-δceramic material, its preparation technology is simple, sintering temperature is low, raw materials is easy to obtain and cost is low.Correspondingly, adopt above-mentioned optimal technical scheme, effectively can reduce the manufacturing cost of end product single-layer nano-film memristor.
Further preferably, above-mentioned single-layer nano-film memristor, is characterized in that, with the hole produced under bias voltage and ionized oxygen ion for charge carrier, relies on the change of described hole and described ionized oxygen ion generation amount to realize the change of device resistance under electric field action.
The technique effect that above-mentioned optimal technical scheme directly produces is, with the hole produced under bias voltage and ionized oxygen ion for charge carrier, under electric field action, rely on the change of described hole and described ionized oxygen ion generation amount to realize the single-layer nano-film memristor of the change of device resistance, its performance is more stable.
In sum, single-layer nano-film memristor of the present invention has following beneficial effect:
Its working mechanism and Mathematical Modeling novelty, and have more generality and universality;
Its structure and manufacture craft is simple, cost is low, be convenient to industrialization produce;
With the hole produced under bias voltage and ionized oxygen ion for charge carrier, under electric field action, rely on the change of described hole and described ionized oxygen ion generation amount to realize the single-layer nano-film memristor of the change of device resistance, its performance is more stable.
Two of object of the present invention is, provides a kind of preparation method of nano-film memristor.
The technical scheme that the present invention adopts for achieving the above object is, a kind of preparation method of nano-film memristor, comprises the steps:
The first step, with Ca (1-x) Sr
xtiO
3-δmake target, adopt magnetically controlled sputter method at Pt/TiO
2/ SiO
2plated film on/Si substrate, the thickness of plated film is 20 ~ 900nm, then through 700-800 DEG C of heat treatment 10-30min;
Second step, at Ca (1-x) Sr
xtiO
3-δnano thin-film plates one deck electrode.
The beneficial effect that technique scheme is brought is, the Ca prepared
(1-x)sr
xtiO
3-δnano thin-film is after 700-800 DEG C of heat treatment 10-30min, both efficiency and the quality of gel mould dense sintering had been ensure that, avoid again the too low and too short film of temperature retention time of temperature fine and close not, or temperature is too high and temperature retention time is long causes the damage of film and electrode to be out of shape.And, selected Pt/TiO
2/ SiO
2/ Si substrate is the commercially available prod of having commercially produced, and its acquiring way is easy.
As preferably, above-mentioned thickness of electrode is 50nm-50um, and described electrode material is Au, Ag, In-Ga or Pt.
For understanding the present invention better, be described in detail from principle below in conjunction with memristor correlation theory.
Of the present invention based on Ca
(1-x)sr
xtiO
3-δthe memristor of nano thin-film, it recalls resistance mechanism and Mathematical Modeling is specially:
This memristor is by the individual layer Ca be sandwiched between two electrodes
(1-x)sr
xtiO
3-δnano thin-film is formed.When a voltage or electric current are added on this device, because film thickness is nanoscale, very little voltage will produce huge electric field, Ca
(1-x)sr
xtiO
3-δo can be there is under bias in the surface contacted with air with the oxygen in air
2+ 4e
-→ 2O
2-reaction, and make to produce hole in film.Meanwhile, generation O is affected in film inside by bias effect
2-→ e
-+ O
-, hole and ionized oxygen ion (O
-) as principal carrier displacement under electric field action, along with hole and ionized oxygen ion (O
-) resistance variations that the change of generation can cause between two electrodes, corresponding film presents minimum (R with it
min) or maximum (R
max) two kinds of different resistance, this is Ca
(1-x)sr
xtiO
3-δrepresent the mechanism recalling resistance characteristic.Now represent a certain moment Ca with O (t)
(1-x)sr
xtiO
3-δthe hole amount produced under bias, the maximum void amount that M produces under representing bias effect, v produces the speed in hole under representing bias effect.Due to hole and ionized oxygen ion (O
-) generation with by its size of current and the duration (i.e. charge accumulated) relevant:
that is:
therefore, film resistor is its function by electric charge: work as R
min<<R
maxtime,
because bias voltage (electric current) interrupts without driving electric field in rear film, and the motion such as each ion, electronics, hole is at normal temperatures inactive, hole and ionized oxygen ion (O in film
-) measure and cannot return the front state of biasing (electric current passes through), resistance when therefore there is memory effect and keep bias voltage (electric current) to interrupt.
Single-layer nano-film memristor of the present invention and preparation method thereof difference from prior art is, the present invention proposes and physics realization one class manufacture craft is simple, cost is low, be easy to realize and have more the novel passive memristor element of generality and universality, adopts based on Ca
(1-x)sr
xtiO
3-δthe single-layer membrane structure of material, recalls resistance mechanism and Mathematical Modeling is unique novel;
This invention simplifies the manufacture craft of nanometer memristor element, reduce manufacturing cost, be specially adapted to general circuit theoretical research and circuit design, specifically have the following advantages:
Based on Ca
(1-x)sr
xtiO
3-δthe memristor of material, its working mechanism and Mathematical Modeling novelty, and have more generality and universality.
Ca of the present invention
(1-x)sr
xtiO
3-δmemristor is a class based under bias with hole and ionized oxygen ion (O
-) carry out the solid electrolyte memristor that conducts electricity for charge carrier.Such memristor is is not researched and developed for computer memory system or human mind system, without special purpose or application background, is that one changes with the sub-generation of bias voltage download stream, and causes the passive electric circuit element that its resistance changes.As a kind of basic passive electric circuit element, this memristor for research memristor characteristic, recall the theoretical and design of electronic circuits of resistance circuit etc. and have more generality and universality.
Ca of the present invention
(1-x)sr
xtiO
3-δmemristor manufacture craft is simple, cost is low, is easy to carry out physics realization, and described memristor belongs to single-layer membrane structure, adopts magnetron sputtering method to realize Ca
(1-x)sr
xtiO
3-δthe making of nano thin-film.Meanwhile, prepare raw material needed for film and be general chemical medicament, cheap.Therefore, the Ca of invention
(1-x)sr
xtiO
3-δmemristor manufacture craft compared with the memristor reported at present is simple, and manufacturing cost is greatly diminished, and is easy to physics realization.
Accompanying drawing explanation
Fig. 1 is the single-layer nano-film memristor structural representation under one embodiment of the present invention;
Fig. 2 is the Mathematical Modeling of single-layer nano-film memristor M (q) of the present invention.
Embodiment
Embodiment 1
Below in conjunction with accompanying drawing to Ca of the present invention
(1-x)sr
xtiO
3-δmemristor is described further.
Fig. 1 is the single-layer nano-film memristor structural representation under one embodiment of the present invention.As shown in Figure 1, single-layer nano-film memristor of the present invention comprises two electrodes 1 and 2, and is placed in the Ca between electrode 1 and 2
(1-x)sr
xtiO
3-δnano thin-film structure, wherein 2 is Pt, and 3 is TiO
2, 4 is SiO
2, 5 is Si, and 6 is the Pt/TiO commercially produced
2/ SiO
2/ Si substrate.
Fig. 2 is the Mathematical Modeling of single-layer nano-film memristor M (q) of the present invention.
Below in conjunction with embodiment, single-layer nano-film memristor of the present invention and preparation method thereof is described in detail.
Embodiment 1-9, wherein, Ca (1-x) Sr
xtiO
3-δraw materials and formula consist of mol ratio (1-x) CaCO
3: xSrCO
3: TiO
3, wherein, 0<x<1; Its preparation method, comprises the steps:
1st step: by CaCO
3, SrCO
3and TiO
3mixing, adds deionized water or absolute ethyl alcohol, ball milling, then dries, obtain compound;
2nd step: adopt mass fraction be the poly-vinyl alcohol solution of 5 ~ 20% as binding agent, the addition of binding agent is treat granulation mixture quality mark 5 ~ 15%, granulation, cross 40 mesh sieves;
3rd step: it is 20 ~ 150mm that the compound after granulation being sieved utilizes tablet press machine to be pressed into diameter, is highly the disk of 2 ~ 50mm;
4th step: the sample after compressing tablet is sintered 15 ~ 240min at 900 ~ 1300 DEG C, cools to room temperature with the furnace.
Embodiment 1
Preparation Ca
(1-x)sr
xtiO
3-δthe composition of raw materials of target is, CaCO
3: SrCO
3: TiO
3=9:1:10(mol ratio).
Embodiment 2
Preparation Ca
(1-x)sr
xtiO
3-δthe composition of raw materials of target is, CaCO
3: SrCO
3: TiO
3=8:2:10(mol ratio).
Embodiment 3
Preparation Ca
(1-x)sr
xtiO
3-δthe composition of raw materials of target is, CaCO
3: SrCO
3: TiO
3=7:3:10(mol ratio).
Embodiment 4
Preparation Ca
(1-x)sr
xtiO
3-δthe composition of raw materials of target is, CaCO
3: SrCO
3: TiO
3=6:4:10(mol ratio).
Embodiment 5
Preparation Ca
(1-x)sr
xtiO
3-δthe composition of raw materials of target is, CaCO
3: SrCO
3: TiO
3=5:5:10(mol ratio).
Embodiment 6
Preparation Ca
(1-x)sr
xtiO
3-δthe composition of raw materials of target is, CaCO
3: SrCO
3: TiO
3=4:6:10(mol ratio).
Embodiment 7
Preparation Ca
(1-x)sr
xtiO
3-δthe composition of raw materials of target is, CaCO
3: SrCO
3: TiO
3=3:7:10(mol ratio).
Embodiment 8
Preparation Ca
(1-x)sr
xtiO
3-δthe composition of raw materials of target is, CaCO
3: SrCO
3: TiO
3=2:8:10(mol ratio).
Embodiment 9
Preparation Ca
(1-x)sr
xtiO
3-δthe composition of raw materials of target is, CaCO
3: SrCO
3: TiO
3=1:9:10(mol ratio).
Embodiment 10 ~ 15 is Ca
(1-x)sr
xtiO
3-δthe top electrode process of nano thin-film, all adopt the formula that embodiment 1 is identical, adopt the preparation method of identical single-layer nano-film memristor, this preparation method comprises the steps:
The first step, with Ca (1-x) Sr
xtiO
3-δmake target, adopt magnetically controlled sputter method at Pt/TiO
2/ SiO
2plated film on/Si substrate, the thickness of plated film is 20 ~ 900nm, then through 700-800 DEG C of heat treatment 10-30min;
Second step, at Ca (1-x) Sr
xtiO
3-δnano thin-film plates one deck electrode.
The preparation method of above-mentioned nano-film memristor, its thickness of electrode is 50nm-50um.
Example 10 ~ 15 adopts Au, Ag, In-Ga or Pt to make electrode material respectively, and the technological parameter in concrete preparation process is as shown in table 1.
The technological parameter of table 1 embodiment 10 ~ 15
| embodiment is numbered | electrode material | top electrode ten thousand formula | heat treatment temperature (.C) |
| au | printing | 800 | |
| au | deposition | room temperature | |
| ag | printing | 600 | |
| in-Ca | printing | room temperature | |
| pt | printing | 900 | |
| embodiment 15 | pt | deposition | room temperature |
Claims (5)
1. a single-layer nano-film memristor, is characterized in that, comprises two electrodes and is placed in Ca (1-x) Sr being rich in Lacking oxygen between two electrodes
xtiO
3-δnano thin-film, wherein, 0<x<1,0< δ <3;
Described Ca (1-x) Sr
xtiO
3-δraw materials and formula consist of mol ratio (1-x) CaCO
3: x SrCO
3: TiO
3, wherein, 0<x<1; Described Ca (1-x) Sr
xtiO
3-δpreparation method, comprise the steps:
1st step: by CaCO
3, SrCO
3and TiO
3mixing, adds deionized water or absolute ethyl alcohol, ball milling, then dries, obtain compound;
2nd step: adopt mass fraction be the poly-vinyl alcohol solution of 5 ~ 20% as binding agent, the addition of binding agent is treat granulation mixture quality mark 5 ~ 15%, granulation, cross 40 mesh sieves;
3rd step: it is 20 ~ 150mm that the compound after granulation being sieved utilizes tablet press machine to be pressed into diameter, is highly the disk of 2 ~ 50mm;
4th step: the sample after compressing tablet is sintered 15 ~ 240min at 900 ~ 1300 DEG C, cools to room temperature with the furnace.
2. single-layer nano-film memristor according to claim 1, is characterized in that, described Ca (1-x) Sr
xtiO
3-δnano thin-film is single thin film structure, and thickness is 20-900 nanometer.
3. single-layer nano-film memristor according to claim 1 and 2, it is characterized in that, with the hole produced under bias voltage and ionized oxygen ion for charge carrier, under electric field action, the change of described hole and described ionized oxygen ion generation amount is relied on to realize the change of device resistance.
4. the preparation method of nano-film memristor as claimed in claim 1, is characterized in that, comprise the steps:
The first step, with Ca (1-x) Sr
xtiO
3-δmake target, adopt magnetically controlled sputter method at Pt/TiO
2/ SiO
2plated film on/Si substrate, the thickness of plated film is 20 ~ 900nm, then through 700-800 DEG C of heat treatment 10-30min;
Second step, at Ca (1-x) Sr
xtiO
3-δnano thin-film plates one deck electrode.
5. the preparation method of nano-film memristor according to claim 4, is characterized in that, described thickness of electrode is 50nm-50um, and described electrode material is Au, Ag, In-Ga or Pt.
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|---|---|---|---|---|
| CN104518088A (en) * | 2014-11-25 | 2015-04-15 | 中国科学院宁波材料技术与工程研究所 | Manufacturing method of biological neural synapsis bionic electronic devices and products thereof |
| CN105405970B (en) * | 2015-11-27 | 2017-10-20 | 西安交通大学 | Resistance switch and preparation method based on ITO nanometer line networks |
| CN105552223B (en) * | 2015-12-25 | 2017-12-01 | 山东科技大学 | One kind is based on Sr (Ti1‑xMgx)O3‑xSingle-layer nano-film memristor preparation method |
| CN105576121B (en) * | 2015-12-25 | 2018-02-06 | 山东科技大学 | A kind of preparation method of flexible single-layer nano-film memristor |
| CN108110136B (en) * | 2015-12-25 | 2021-03-12 | 山东科技大学 | Preparation method of single-layer resistive film memristor |
| CN105552224B (en) * | 2016-01-21 | 2018-02-06 | 山东科技大学 | One kind is based on nanoscale individual layer Bi(1‑x)CaxFeO3‑x/2The preparation method of resistive film memristor |
| CN105742487B (en) * | 2016-01-21 | 2018-02-06 | 山东科技大学 | A kind of preparation method of ambipolar nano-film memristor |
| CN105591028B (en) * | 2016-01-21 | 2018-02-06 | 山东科技大学 | A kind of preparation method using LTCC greens band as the single-layer nano-film memristor of substrate |
| CN108950507B (en) * | 2018-08-15 | 2020-03-17 | 电子科技大学 | Memristive switching device based on a-TSC-O ceramic film and preparation method thereof |
| CN110736575B (en) * | 2019-10-23 | 2020-12-15 | 中国科学院半导体研究所 | Artificial synapse sensor and preparation method thereof |
| CN112750951B (en) * | 2020-12-28 | 2023-01-10 | 山东科技大学 | Flexible memristor based on organic solution and preparation method |
| CN112687794B (en) * | 2020-12-28 | 2024-03-19 | 山东科技大学 | Flexible memristor with self-repairing capability and preparation method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102270738A (en) * | 2010-06-03 | 2011-12-07 | 北京大学 | Manufacturing method of memory unit comprising resistor |
| CN102544359A (en) * | 2010-12-30 | 2012-07-04 | 中国科学院微电子研究所 | Memristor and manufacturing method for same |
| CN102738387A (en) * | 2011-04-12 | 2012-10-17 | 中国科学院微电子研究所 | Memristor based on TiOx structure and manufacturing method of memristor |
| CN103236499A (en) * | 2013-05-07 | 2013-08-07 | 山东科技大学 | Unipolar memristor and preparation method thereof |
-
2013
- 2013-11-05 CN CN201310540846.XA patent/CN103594620B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102270738A (en) * | 2010-06-03 | 2011-12-07 | 北京大学 | Manufacturing method of memory unit comprising resistor |
| CN102544359A (en) * | 2010-12-30 | 2012-07-04 | 中国科学院微电子研究所 | Memristor and manufacturing method for same |
| CN102738387A (en) * | 2011-04-12 | 2012-10-17 | 中国科学院微电子研究所 | Memristor based on TiOx structure and manufacturing method of memristor |
| CN103236499A (en) * | 2013-05-07 | 2013-08-07 | 山东科技大学 | Unipolar memristor and preparation method thereof |
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