CN107833968B - Memristor preparation method based on nanoscale single-layer resistive film - Google Patents
Memristor preparation method based on nanoscale single-layer resistive film Download PDFInfo
- Publication number
- CN107833968B CN107833968B CN201711221184.4A CN201711221184A CN107833968B CN 107833968 B CN107833968 B CN 107833968B CN 201711221184 A CN201711221184 A CN 201711221184A CN 107833968 B CN107833968 B CN 107833968B
- Authority
- CN
- China
- Prior art keywords
- memristor
- film
- feo
- preparation
- target material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002356 single layer Substances 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 51
- 239000000919 ceramic Substances 0.000 claims abstract description 24
- 239000002994 raw material Substances 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000013077 target material Substances 0.000 claims description 37
- 239000002120 nanofilm Substances 0.000 claims description 35
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 24
- ZCCIPPOKBCJFDN-UHFFFAOYSA-N calcium nitrate Chemical compound [Ca+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ZCCIPPOKBCJFDN-UHFFFAOYSA-N 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 21
- 229910052737 gold Inorganic materials 0.000 claims description 20
- 229910052697 platinum Inorganic materials 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 16
- 238000002156 mixing Methods 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 12
- 238000001556 precipitation Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 4
- 239000008187 granular material Substances 0.000 claims description 4
- 238000005469 granulation Methods 0.000 claims description 4
- 230000003179 granulation Effects 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- 238000007873 sieving Methods 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- 238000007751 thermal spraying Methods 0.000 claims description 3
- 230000008859 change Effects 0.000 abstract description 24
- 229910010293 ceramic material Inorganic materials 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 abstract description 10
- 239000001301 oxygen Substances 0.000 abstract description 10
- -1 oxygen ions Chemical class 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 7
- 238000005245 sintering Methods 0.000 abstract description 6
- 238000006467 substitution reaction Methods 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 4
- 238000001354 calcination Methods 0.000 abstract description 3
- 239000000969 carrier Substances 0.000 abstract description 3
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 229910021645 metal ion Inorganic materials 0.000 abstract 1
- PPNKDDZCLDMRHS-UHFFFAOYSA-N dinitrooxybismuthanyl nitrate Chemical compound [Bi+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PPNKDDZCLDMRHS-UHFFFAOYSA-N 0.000 description 16
- 239000000126 substance Substances 0.000 description 11
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(III) nitrate Inorganic materials [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 9
- 230000007246 mechanism Effects 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 150000001768 cations Chemical class 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000013178 mathematical model Methods 0.000 description 6
- 238000011160 research Methods 0.000 description 6
- 230000006872 improvement Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000015654 memory Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 238000003854 Surface Print Methods 0.000 description 2
- 238000013528 artificial neural network Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000003837 high-temperature calcination Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 210000005036 nerve Anatomy 0.000 description 1
- 210000002569 neuron Anatomy 0.000 description 1
- 229910021650 platinized titanium dioxide Inorganic materials 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 210000000225 synapse Anatomy 0.000 description 1
- 230000000946 synaptic effect Effects 0.000 description 1
- 230000003977 synaptic function Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
Abstract
The invention discloses aA preparation method of a memristor based on a nanoscale single-layer resistive film utilizes holes and ionized oxygen ions generated by the resistive film under bias voltage as current carriers and depends on the change of the generated quantity of the current carriers to realize the principle of resistance change of a device, and starts from two aspects of simplifying the process and improving the formula of the resistive film material on the basis of the prior art: omits the pre-sintering step of the resistance change film ceramic material, selects the raw materials with higher metal ion valence and lower ceramic sintering temperature, and adopts lower calcining temperature to ensure that Ca2+Part of Bi3+The A-site substitution is carried out to increase lattice defects and cavities inside the resistance changing film, increase the asymmetry of the molecular structure of the resistance changing film and other technical means, simplify the preparation process, improve the production efficiency, and reduce the production energy consumption and the production cost; meanwhile, the memristor performance and the yield of the memristor are greatly improved.
Description
The application is the application number 201610040620.7, the application date 2016, 1, 21 and the invention name' a nano-scale single-layer Bi-based material(1-x)CaxFeO3-x/2A preparation method of a resistance change film memristor.
Technical Field
The invention relates to a preparation method of a memristor, in particular to a preparation method based on nanoscale single-layer Bi(1-x)CaxFeO3-x/2A preparation method of the resistance change film memristor; belonging to the field of nonlinear circuit application.
Background
Memristors, also known as memristors, are a fourth type of passive circuit element that appears subsequent to the resistance, capacitance, and inductance. The nano-scale memory has nonvolatile, synaptic function and nano-scale structure, and has great application prospect in the fields of high-density nonvolatile memories, artificial neural networks, large-scale integrated circuits, reconfigurable logic and programmable logic, bioengineering, mode recognition, signal processing and the like. And the method is expected to pave the way for the development of manufacturing nonvolatile storage equipment with infinite storage precision and ultrahigh storage density, artificial neural networks capable of adjusting neuron synaptic weights, analog computers for processing and contacting information in a human brain-like mode and the like, and brings revolutionary changes to the manufacturing and running modes of the computers.
In the current research, the memristivity can realize mechanism division and can be divided into a boundary migration model, an electron spin blocking model, a phase change mechanism and a wire-conducting mechanism.
In recent years, although the research on memristors has been advanced greatly, we also see that the research on memristors, as a basic circuit element, is just started, mainly expressed in the following aspects:
(1) in recent years, new memristive materials and memristive systems are reported, but physically implemented memristor models are few and relatively single, and a uniform universal model is not available yet to describe memristor behaviors.
Most of the recently reported physical memristors are proposed for some applications or simulation of some functions (such as high-density nonvolatile memories, Crossbar Latch technology and simulated nerve synapses), most of the practical memristors adopt a switch model and a working mechanism similar to those of the HP memristors, are complex in manufacturing process and high in cost, and do not have generality and universality for researching memristor characteristics, memristor circuit theory, electronic circuit design and the like.
(2) Commercial production is not realized at present.
Most researchers have difficulty obtaining a true memristor element, so that many researchers cannot perform hardware experiments in a true physical sense due to the lack of the memristor element when researching memristors and memristor circuits, and most of the researchers rely on simulation or analog circuits to perform experimental researches. However, memristor simulation models and analog circuits are far from actual memristor characteristics, and hardware implementation with analog circuits is more concerned with simulating memristor mathematical models and neglecting the intrinsic physical characteristics of the memristors.
(3) The reported preparation of the physical memristor has high requirements and harsh conditions on raw material selection and preparation process methods, and the preparation of related physical memristor elements is difficult to complete in laboratories or scientific research units with common conditions.
In terms of physical implementation of the memristor, in the prior art, it is more advanced that chinese patent application CN103594620A discloses a single-layer nano-film memristor and a preparation method thereof, which prepares the memristor with a composite layer structure form based on a physical implementation manner, and the specific preparation method is as follows: using CaCO3，SrCO3And TiO3As raw material, sintering at 900-1300 ℃ for 15-240min to prepare Ca(1-x)SrxTiO3-Ceramic material, then with Ca(1-x)SrxTiO3-As target material (wherein, 0)<x<1，0<<3) In Pt/TiO by magnetron sputtering2/SiO2Coating on a Si substrate, wherein the thickness of the coating is 20-900nm, and then performing heat treatment at 700-800 ℃ for 10-30 min; finally at Ca(1-x)SrxTiO3-The nano film is plated with a layer of electrode.
The essence of the technical scheme is as follows in summary: ca used as a target material is prepared first(1-x)SrxTiO3-(wherein, 0<x<1，0<<3) Ceramic material, followed by Ca(1-x)SrxTiO3-Ceramic material as target material is magnetron sputtered on Pt/TiO2/SiO2Coating on Si substrate, and finally coating with Ca(1-x)SrxTiO3-The nano film is plated with a layer of electrode.
The preparation method of the technical scheme has the main defects and shortcomings that:
1. the prepared memristor is poor in memristive performance.
The reason is that its resistance change layer: ca(1-x)SrxTiO3-The nano-film is Ca(1-x)SrxTiO3-Ceramic material as target (wherein, 0)<x<1，0<<3) And depositing on the surface of the lower electrode by adopting a magnetron sputtering method.
The monolayer nanometer film in the structural form is sintered into ceramic material Ca through calcination at higher temperature (900-(1-x)SrxTiO3-Is a target material and is deposited on the lower electrode substrate by magnetron sputtering, and the internal structure of the materialAnd (4) the product is compact and has few lattice defects and holes.
2. The preparation process is complex, the preparation period is long, and the energy consumption is high:
the reason is that the preparation process needs to be firstly calcined at the high temperature of 900-1300 ℃ to prepare Ca(1-x)SrxTiO3-A ceramic material target; after the magnetron sputtering forming, the heat treatment is carried out for 10-30min at the temperature of 700-800 ℃.
In addition, the method also has the problems and disadvantages of relatively strict process conditions and low product rate.
Disclosure of Invention
The invention aims to provide a preparation method of a single-layer nanometer resistance change film memristor, which is easy to physically realize, simple in preparation process, small in control difficulty, stable in quality, high in production efficiency and low in cost.
In order to achieve the purpose, the invention adopts a first technical scheme that a preparation method of a single-layer nanometer resistance change film memristor is characterized by comprising the following steps:
first step, preparation of Bi(1-x)CaxFeO3-x/2The target material comprises the following specific steps:
(1) and mixing raw materials:
adding Bi (NO)3)3·5H2O3、Ca(NO3)2·4H2O3And Fe (NO)3)3·9H2O3Mixing according to the molar ratio of (1-x) to x: 1, wherein 0<x<1；
Dissolving the mixture in 10-20% dilute nitric acid, and stirring in a magnetic stirrer to dissolve completely;
(2) preparation of the powder
Slowly dripping NaOH solution into the solution until the precipitation is complete, filtering the precipitation and washing the precipitation by using deionized water, dripping NaOH solution and adjusting the pH value, putting the solution into a reaction kettle, putting the reaction kettle into a constant-temperature drying box which is at a certain temperature of 200 ℃ in advance, and carrying out hydrothermal reaction for 24 hours;
after the hydrothermal reaction, naturally cooling the reaction kettle to room temperature, repeatedly cleaning the sample obtained in the reaction kettle by deionized water until all soluble salts are removed, and drying at 60 ℃ to obtain Bi(1-x)CaxFeO3-x/2Powder;
(3) and granulating:
granulating the powder: adding a polyvinyl alcohol solution with the mass percentage concentration of 2-5% according to 2-5% of the mass of the mixture to be granulated, uniformly mixing, and then sieving by a 40-mesh sieve for granulation;
(4)、Bi(1-x)CaxFeO3-x/2and (3) pressing and forming of the target material:
placing the granulated material on a tablet press to be pressed into blocks; then cutting the obtained block-shaped material into round pieces with the diameter of 20-150mm and the thickness of 2-50mm to obtain Bi(1-x)CaxFeO3-x/2A target material;
secondly, selecting a lower electrode:
taking a Si substrate, taking Pt or Au as a target material, and depositing the Pt or Au on the Si substrate by adopting a pulse laser method or a magnetron sputtering method to form a lower electrode taking the Si substrate as a substrate and made of Pt or Au;
thirdly, the obtained Bi(1-x)CaxFeO3-x/2A target material deposited on the upper surface of the lower electrode by a pulse laser method or a magnetron sputtering method;
then, heat treatment is carried out for 10-30 minutes at the temperature of 700-900 ℃ to obtain Bi as a chemical component(1-x)CaxFeO3-x/2The single-layer ceramic nano-film of (1);
fourthly, depositing Au, Ag or Pt on the chemical component Bi by using a target material made of Au, Ag or Pt and adopting a pulse laser method and a magnetron sputtering method(1-x)CaxFeO3-x/2Preparing an upper electrode on the single-layer ceramic nano film to obtain the single-layer nano resistance changing film memristor;
or:
plating the In-Ga electrode solution on the chemical composition by adopting a surface printing methodIs divided into Bi(1-x)CaxFeO3-x/2And preparing an upper electrode on the single-layer ceramic nano film to obtain the single-layer nano resistance changing film memristor.
The technical effect directly brought by the technical proposal is that a pulse laser method or a magnetron sputtering method is adopted, and the chemical component is Bi(1-x)CaxFeO3-x/2Target of (2) directly adding Bi(1-x)CaxFeO3-x/2Deposited on the upper surface of the lower electrode; and a chemical component Bi with good resistance change performance is formed on the upper surface of the lower electrode in the subsequent heat treatment process at the temperature of 700-900 DEG C(1-x)CaxFeO3-x/2The single-layer ceramic nano-film.
Compared with the preparation process of the prior art, which firstly calcines the mixed raw materials at high temperature, burns the mixed raw materials into ceramic materials, and then takes the ceramic materials as target materials to carry out magnetron sputtering deposition on the surface of the lower electrode so as to form the resistance change film, the preparation process of the technical scheme has the main improvement point that: the prior ceramic material calcination process step is omitted. The preparation process of the memristor is simplified, the process flow is shortened, the production efficiency is improved, and the production energy consumption is reduced;
compared with the prior art, the technical scheme not only simply omits the step of preparing the ceramic material by high-temperature calcination. More importantly, in the technical scheme of the invention, the mixture target is deposited on the surface of the lower electrode, and then sintering forming of the resistance change film made of the nano ceramic material is carried out in the heat treatment process at low temperature (700 ℃ C. and 900 ℃ C.). Because of the low temperature and short time in the heat treatment process, the sintering of the nano-ceramics is incomplete 'sintering', and a large number of lattice defects and cavities are increased in the nano-ceramics. These contribute to improvement in resistance change performance of the resistance change film.
Compared with the nearest prior art memristor in terms of chemical composition of the resistive switching film, the technical scheme of the invention adopts + 2-valent cations (Ca)2+) Partially substituted +3 valent cations (Bi)3+) The substitution at the A position is carried out, compared with the mutual substitution of the metal cations with the +2 valence in the prior art, the substitution is increasedThe asymmetry of the molecular structure in the resistance-change layer (single-layer ceramic nano film) is improved, the hole amount in the resistance-change layer (single-layer ceramic nano film) is increased, and the memristor performance can be greatly improved.
Preferably, the thickness of the upper electrode is 10nm to 50 um.
The technical effect that this preferred technical scheme directly brought is, on the basis of guaranteeing memristor performance, the selection of the thickness of upper electrode is carried out in this broad scope of 10nm-50um, is favorable to reducing the technology control degree of difficulty, improves the yield.
More preferably, the thickness of the single-layer ceramic nano-film is 10 to 990 nm.
The technical effect directly brought by the optimized technical scheme is that our experience shows that the thickness of the single-layer ceramic nano film is 10-990nm, and on one hand, the single-layer ceramic nano film has better resistance change performance; on the other hand, the process control is convenient.
In order to achieve the purpose, the invention adopts a second technical scheme that a preparation method of a single-layer nanometer resistance change film memristor is characterized by comprising the following steps:
first step, preparation of Bi(1-x)CaxFeO3-x/2The target material comprises the following specific steps:
(1) and mixing raw materials:
adding Bi (NO)3)3·5H2O3、Ca(NO3)2·4H2O3And Fe (NO)3)3·9H2O3Mixing according to the molar ratio of (1-x) to x: 1, wherein 0<x<1；
Dissolving the mixture in 10-20% dilute nitric acid, and stirring in a magnetic stirrer to dissolve completely;
(2) preparation of the powder
Slowly dripping NaOH solution into the solution until the precipitation is complete, filtering the precipitation and washing the precipitation by using deionized water, dripping NaOH solution and adjusting the pH value, putting the solution into a reaction kettle, putting the reaction kettle into a constant-temperature drying box which is at a certain temperature of 200 ℃ in advance, and carrying out hydrothermal reaction for 24 hours;
after the hydrothermal reaction, naturally cooling the reaction kettle to room temperature, repeatedly cleaning the sample obtained in the reaction kettle by deionized water until all soluble salts are removed, and drying at 60 ℃ to obtain Bi(1-x)CaxFeO3-x/2Powder;
(3) and granulating:
granulating the powder: adding a polyvinyl alcohol solution with the mass percentage concentration of 2-5% according to 2-5% of the mass of the mixture to be granulated, uniformly mixing, and then sieving by a 40-mesh sieve for granulation;
(4)、Bi(1-x)CaxFeO3-x/2and (3) pressing and forming of the target material:
placing the granulated material on a tablet press to be pressed into blocks; then cutting the obtained block-shaped material into round pieces with the diameter of 20-150mm and the thickness of 2-50mm to obtain Bi(1-x)CaxFeO3-x/2A target material;
secondly, selecting a lower electrode:
taking a Si substrate, taking Pt or Au as a target material, and depositing the Pt or Au on the Si substrate by adopting a pulse laser method or a magnetron sputtering method to form a lower electrode taking the Si substrate as a substrate and made of Pt or Au;
thirdly, the obtained Bi(1-x)CaxFeO3-x/2A target material deposited on the upper surface of the lower electrode by a pulse laser method or a magnetron sputtering method;
fourthly, depositing Au, Ag or Pt on the target material with the material of Au, Ag or Pt by adopting a thermal spraying method(1-x)CaxFeO3-x/2Obtaining an upper electrode on the single-layer ceramic nano-film;
and finally, carrying out heat treatment at the temperature of 700-900 ℃ for 10-30 minutes to obtain the single-layer nano resistive film memristor.
The technical effect directly brought by the technical scheme is that the method is easy to physically realize, simple in preparation process, small in control difficulty, stable in quality, high in production efficiency and low in cost. The specific reason is the same as above, and is not described in detail.
Preferably, the thickness of the upper electrode is 10nm to 50 um.
The technical effect that this preferred technical scheme directly brought is, on the basis of guaranteeing memristor performance, the selection of the thickness of upper electrode is carried out in this broad scope of 10nm-50um, is favorable to reducing the technology control degree of difficulty, improves the yield.
More preferably, the thickness of the single-layer ceramic nano-film is 10 to 990 nm.
The technical effect directly brought by the optimized technical scheme is that our experience shows that the thickness of the single-layer ceramic nano film is 10-990nm, and on one hand, the single-layer ceramic nano film has better resistance change performance; on the other hand, the process control is convenient.
The memristor adopts the memristor resistance change principle that holes and ionized oxygen ions generated under bias voltage are used as carriers, and the resistance of a device is changed by means of the change of the generation amount of the holes and the ionized oxygen ions under the action of an electric field.
It can be seen that the working mechanism and the mathematical model have generality and universality.
To better understand this, a brief explanation and description follows.
Bi of the present invention(1-x)CaxFeO3-x/2The memristor of the nano film has a memristor mechanism and a mathematical model that the memristor is formed by a single layer Bi clamped between two electrodes(1-x)CaxFeO3-x/2And (3) forming a nano film.
When a voltage or current is applied to the device, a very small voltage will generate a large electric field due to the nanoscale thickness of the film, and Bi(1-x)CaxFeO3-x/2The surface contacting with the air generates O with the oxygen in the air under the bias action2+4e-→2O2-And reacting to generate holes in the film. At the same time, O occurs in the film under the influence of bias2-→e-+O-Hole and ionized oxygen ion (O)-) As main carrier, it moves directionally under the action of electric field, along with hole and ionized oxygen ion (O)-) Amount of productionThe change of (A) causes a change in resistance between the two electrodes, and the corresponding film exhibits a minimum (R)min) Or maximum (R)max) Two different resistances, i.e. Bi(1-x)CaxFeO3-x/2Mechanism of exhibiting memristive properties.
O (t) represents a certain time Bi(1-x)CaxFeO3-x/2The amount of holes generated under bias, M represents the maximum amount of holes generated under bias, and v represents the rate at which holes are generated under bias.
Due to holes and ionized oxygen ions (O)-) The amount of production is related to the magnitude of the current passing through it and its duration (i.e., charge accumulation)
I.e. to
Thus, sheet resistance is a function of its passing charge, when Rmin<<RmaxWhen the temperature of the water is higher than the set temperature,
because there is no driving electric field in the film after the bias voltage (current) is interrupted, and the movement of each ion, electron, hole, etc. is inactive at normal temperature, the hole and ionized oxygen ion (O) in the film-) The amount cannot return to the state before the bias (current passes) and thus has a memory effect to maintain the resistance at the time of the interruption of the bias (current).
The invention simplifies the manufacturing process of the nano memristor element, reduces the manufacturing cost, is particularly suitable for general circuit theory research and circuit design, and has the following advantages:
based on Bi(1-x)CaxFeO3-x/2The memristor of the material has novel working mechanism and mathematical model, and has more generality and universality.
Bi of the present invention(1-x)CaxFeO3-x/2Memristors are based on the ionization of oxygen ions (O) by holes under the action of a bias voltage-) Solid electrolyte conducting current for current carrierMemristors. The memristor is not developed for a computer memory system or a human memory system, has no special purpose or application background, but is a passive circuit element which changes the generation amount of the biased down-loaded current, so that the resistance of the passive circuit element is changed. Namely, the memristor prepared by the invention is used as a basic passive circuit element, and has generality and universality for researching characteristics of the memristor, a memristor circuit theory, an electronic circuit design and the like.
In summary, compared with the prior art, the core improvement point of the present invention in the aspects of technical idea and technical principle lies in two aspects:
firstly, a ceramic material pre-firing step used as a resistance change film component is omitted; secondly, the improvement of the chemical composition of the resistance change film ceramic material (namely, adopting + 2-valent cation (Ca)2+) Partially substituted +3 valent cations (Bi)3+) The substitution at the A site is carried out, and compared with the mutual substitution of the metal cations with the valence of 2 in the prior art, the asymmetry of the molecular structure in the resistance change layer (single-layer ceramic nano-film) is increased).
Moreover, based on the two improvements, the resistive film made of the ceramic material is subjected to beneficial benign changes (the number of holes is greatly increased) in the structure, so that the final memristor memristive performance is remarkably improved.
It needs to be further explained that: in the two technical schemes, the heat treatment sequence of the adopted nano film is different according to the difference of the respectively selected upper electrode material or the electrode plating method. The purpose is as follows:
ensure Bi(1-x)CaxFeO3-x/2The nano film and the upper electrode have extremely high cutting degree and bonding property so as to avoid the damage of the upper electrode or poor bonding between the electrode and the film.
Compared with the prior art, the memristor product prepared by the method has the beneficial effects of simple preparation process, small control difficulty, stable quality, high production efficiency, low cost, better memristive performance of the prepared memristor product and the like.
Drawings
FIG. 1 is a schematic diagram of a single-layer nano-film memristor structure of the present invention;
FIG. 2 is a mathematical model of a single-layer nano-film memristor M (q) of the present disclosure.
Detailed Description
The present invention will be briefly described with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of a single-layer nano-film memristor structure of the present invention.
As shown in FIG. 1, the single-layer nano-film memristor is of a composite layer structure and sequentially comprises an upper electrode and Bi from top to bottom(1-x)CaxFeO3-x/2A nano-film and a lower electrode. Wherein, the upper electrode is Au, Ag, In-Ga or Pt, the lower electrode is Pt or Au, and the Si substrate is taken as the substrate.
FIG. 2 is a mathematical model of a single-layer nano-film memristor M (q) of the present disclosure.
As can be seen from FIG. 2, the memristive mechanism of the present invention is a function of holes and ionized oxygen ions (O)-) The variation of the amount of generation causes the variation of the resistance between the two electrodes, and the corresponding film exhibits the minimum (R)min) Or maximum (R)max) Two different resistances, i.e. Bi(1-x)CaxFeO3-x/2The mechanism of memristive characteristics of (1).
The present invention will be described in further detail with reference to examples.
Description of the drawings: in the following examples, commercially available products were used as the lower electrodes.
Example 1
The preparation method of the memristor comprises the following steps
First step, preparation of Bi(1-x)CaxFeO3-x/2The target material comprises the following specific steps:
(1) and mixing raw materials:
adding Bi (NO)3)3·5H2O3∶Ca(NO3)2·4H2O3∶Fe(NO3)3·9H2O3Mixing at a molar ratio of 99: 1: 100;
dissolving the mixture in 10-20% dilute nitric acid, and stirring in a magnetic stirrer to dissolve completely;
(2) preparation of the powder
Slowly dripping NaOH solution into the solution until the precipitation is complete, filtering the precipitation and washing the precipitation by using deionized water, dripping NaOH solution and adjusting the pH value, putting the solution into a reaction kettle, putting the reaction kettle into a constant-temperature drying box which is at a certain temperature of 200 ℃ in advance, and carrying out hydrothermal reaction for 24 hours;
after the hydrothermal reaction, naturally cooling the reaction kettle to room temperature, repeatedly cleaning the sample obtained in the reaction kettle by deionized water until all soluble salts are removed, and drying at 60 ℃ to obtain Bi(1-x)CaxFeO3-x/2Powder;
(3) and granulating:
granulating the powder: adding a polyvinyl alcohol solution with the mass percentage concentration of 2-5% according to 2-5% of the mass of the mixture to be granulated, uniformly mixing, and then sieving by a 40-mesh sieve for granulation;
(4)、Bi(1-x)CaxFeO3-x/2and (3) pressing and forming of the target material:
placing the granulated material on a tablet press to be pressed into blocks; then cutting the obtained block-shaped material into round pieces with the diameter of 20-150mm and the thickness of 2-50mm to obtain Bi(1-x)CaxFeO3-x/2A target material;
secondly, selecting a lower electrode:
taking a Si substrate, taking Pt or Au as a target material, and depositing the Pt or Au on the Si substrate by adopting a pulse laser method or a magnetron sputtering method to form a lower electrode taking the Si substrate as a substrate and made of Pt or Au;
thirdly, the obtained Bi(1-x)CaxFeO3-x/2A target material deposited on the upper surface of the lower electrode by a pulse laser method or a magnetron sputtering method;
then, heat-treated at 800 ℃ for 15 minutes to obtain Bi as a chemical component(1-x)CaxFeO3-x/2The single-layer ceramic nano-film of (1);
fourthly, taking the material as the target of AuDepositing Au on the chemical component Bi by a pulse laser method(1-x)CaxFeO3-x/2And preparing an upper electrode on the single-layer ceramic nano film to obtain the single-layer nano resistance changing film memristor.
The thickness of the upper electrode is 10nm-50 um.
The thickness of the single-layer ceramic nano film is 10-990 nm.
Example 2
Except for preparing Bi(1-x)CaxFeO3-x/2The target material comprises the following raw materials:
Bi(NO3)3·5H2O3∶Ca(NO3)2·4H2O3∶Fe(NO3)3·9H2O398: 2: 100 (molar ratio), and outside the parameters in table 1 below;
otherwise, the same procedure as in example 1 was repeated.
Example 3
Except for preparing Bi(1-x)CaxFeO3-x/2The target material comprises the following raw materials:
Bi(NO3)3·5H2O3∶Ca(NO3)2·4H2O3∶Fe(NO3)3·9H2O397: 3: 100 (molar ratio), and outside the parameters in table 1 below;
otherwise, the same procedure as in example 1 was repeated.
Example 4
Except for preparing Bi(1-x)CaxFeO3-x/2The target material comprises the following raw materials:
Bi(NO3)3·5H2O3∶Ca(NO3)2·4H2O3∶Fe(NO3)3·9H2O3999: 1: 1000 (molar ratio), and outside the parameters in table 1 below;
otherwise, the same procedure as in example 1 was repeated.
Example 5
Except for preparing Bi(1-x)CaxFeO3-x/2The target material comprises the following raw materials:
Bi(NO3)3·5H2O3∶Ca(NO3)2·4H2O3∶Fe(NO3)3·9H2O3998: 2: 1000 (molar ratio), and outside the parameters in table 1 below;
otherwise, the same procedure as in example 1 was repeated.
Example 6
Except for preparing Bi(1-x)CaxFeO3-x/2The target material comprises the following raw materials:
Bi(NO3)3·5H2O3∶Ca(NO3)2·4H2O3∶Fe(NO3)3·9H2O3997: 3: 1000 (molar ratio), and outside the parameters in table 1 below;
otherwise, the same procedure as in example 1 was repeated.
Example 7
Except for preparing Bi(1-x)CaxFeO3-x/2The target material comprises the following raw materials:
Bi(NO3)3·5H2O3∶Ca(NO3)2·4H2O3∶Fe(NO3)3·9H2O39999: 1: 10000 (molar ratio);
and, the "fourth step" in the preparation method of the above example 1 was replaced with:
plating In-Ga electrode solution on the chemical component Bi by adopting a surface printing method(1-x)CaxFeO3-x/2Obtaining an upper electrode on the single-layer ceramic nano-film;
and in addition to the parameters in table 1 below;
otherwise, the same procedure as in example 1 was repeated.
Example 8
Except for preparing Bi(1-x)CaxFeO3-x/2The target material comprises the following raw materials:
Bi(NO3)3·5H2O3∶Ca(NO3)2·4H2O3∶Fe(NO3)3·9H2O39998: 2: 10000 (molar ratio);
and, the "third step" in the preparation method of the above example 1 was replaced with:
the obtained Bi(1-x)CaxFeO3-x/2A target material deposited on the upper surface of the lower electrode by a pulse laser method or a magnetron sputtering method;
and, the "fourth step" in the preparation method of example 1 was replaced with:
the material is Au, and the chemical component is Bi deposited by adopting a thermal spraying method(1-x)CaxFeO3-x/2Obtaining an upper electrode on the single-layer ceramic nano-film;
and finally, carrying out heat treatment at the temperature of 700-900 ℃ for 10-30 minutes to obtain the single-layer nano resistive film memristor.
And in addition to the parameters in table 1 below;
otherwise, the same procedure as in example 1 was repeated.
Example 9
Except for preparing Bi(1-x)CaxFeO3-x/2The target material comprises the following raw materials:
Bi(NO3)3·5H2O3∶Ca(NO3)2·4H2O3∶Fe(NO3)3·9H2O39997: 3: 10000 (molar ratio), and outside of the parameters in table 1 below;
otherwise, the same procedure as in example 8 was repeated.
Example 10
In addition to the parameters in table 1 below;
otherwise, the same procedure as in example 8 was repeated.
Table 1: main Process parameters of each of examples 1 to 10
And (3) detection and inspection of the product:
I-V characteristic tests of the finally prepared memristors of the above examples 1-10 show that
I-V characteristic curves of the memristors are all in 8 shapes;
and by changing the pressurization size and the pressurization time, the I-V characteristics of the memristor show nonvolatile (i.e. memorability) which is peculiar to the memristor.
Claims (3)
1. A preparation method of a memristor based on a nanoscale single-layer resistive film is characterized by comprising the following steps:
first step, preparation of Bi(1-x)CaxFeO3-x/2The target material comprises the following specific steps:
(1) and mixing raw materials:
adding Bi (NO)3)3·5H2O3、Ca(NO3)2·4H2O3And Fe (NO)3)3·9H2O3Mixing according to the molar ratio of (1-x) to x: 1, wherein x is less than or equal to 0.01;
dissolving the mixture in 10-20% dilute nitric acid, and stirring in a magnetic stirrer to dissolve completely;
(2) preparation of the powder
Slowly dripping NaOH solution into the solution until the precipitation is complete, filtering the precipitation and washing the precipitation by using deionized water, dripping NaOH solution and adjusting the pH value, putting the solution into a reaction kettle, putting the reaction kettle into a constant-temperature drying box which is at a certain temperature of 200 ℃ in advance, and carrying out hydrothermal reaction for 24 hours;
after the hydrothermal reaction, naturally cooling the reaction kettle to room temperature, repeatedly cleaning the sample obtained in the reaction kettle by deionized water until all soluble salts are removed, and drying at 60 ℃ to obtain Bi(1-x)CaxFeO3-x/2Powder;
(3) and granulating:
granulating the powder: adding a polyvinyl alcohol solution with the mass percentage concentration of 2-5% according to 2-5% of the mass of the mixture to be granulated, uniformly mixing, and then sieving by a 40-mesh sieve for granulation;
(4)、Bi(1-x)CaxFeO3-x/2and (3) pressing and forming of the target material:
placing the granulated material on a tablet press to be pressed into blocks; then cutting the obtained block-shaped material into round pieces with the diameter of 20-150mm and the thickness of 2-50mm to obtain Bi(1-x)CaxFeO3-x/2A target material;
secondly, selecting a lower electrode:
taking a Si substrate, taking Pt or Au as a target material, and depositing the Pt or Au on the Si substrate by adopting a pulse laser method or a magnetron sputtering method to form a lower electrode taking the Si substrate as a substrate and made of Pt or Au;
thirdly, the obtained Bi(1-x)CaxFeO3-x/2A target material deposited on the upper surface of the lower electrode by a pulse laser method or a magnetron sputtering method;
fourthly, depositing Au, Ag or Pt on the target material with the material of Au, Ag or Pt by adopting a thermal spraying method(1-x)CaxFeO3-x/2Obtaining an upper electrode on the single-layer ceramic nano-film;
and finally, carrying out heat treatment at the temperature of 700-900 ℃ for 10-30 minutes to obtain the single-layer nano resistive film memristor.
2. The preparation method of the memristor based on the nanoscale single-layer resistive switching film according to claim 1, wherein the thickness of the upper electrode is 10nm-50 um.
3. The preparation method of the memristor based on the nanoscale single-layer resistive switching film according to claim 1, wherein the thickness of the single-layer ceramic nano-film is 10-990 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711221184.4A CN107833968B (en) | 2016-01-21 | 2016-01-21 | Memristor preparation method based on nanoscale single-layer resistive film |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711221184.4A CN107833968B (en) | 2016-01-21 | 2016-01-21 | Memristor preparation method based on nanoscale single-layer resistive film |
| CN201610040620.7A CN105552224B (en) | 2016-01-21 | 2016-01-21 | One kind is based on nanoscale individual layer Bi(1‑x)CaxFeO3‑x/2The preparation method of resistive film memristor |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610040620.7A Division CN105552224B (en) | 2016-01-21 | 2016-01-21 | One kind is based on nanoscale individual layer Bi(1‑x)CaxFeO3‑x/2The preparation method of resistive film memristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107833968A CN107833968A (en) | 2018-03-23 |
| CN107833968B true CN107833968B (en) | 2020-09-11 |
Family
ID=55831298
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711221184.4A Active CN107833968B (en) | 2016-01-21 | 2016-01-21 | Memristor preparation method based on nanoscale single-layer resistive film |
| CN201610040620.7A Active CN105552224B (en) | 2016-01-21 | 2016-01-21 | One kind is based on nanoscale individual layer Bi(1‑x)CaxFeO3‑x/2The preparation method of resistive film memristor |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610040620.7A Active CN105552224B (en) | 2016-01-21 | 2016-01-21 | One kind is based on nanoscale individual layer Bi(1‑x)CaxFeO3‑x/2The preparation method of resistive film memristor |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN107833968B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112687794B (en) * | 2020-12-28 | 2024-03-19 | 山东科技大学 | Flexible memristor with self-repairing capability and preparation method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105576122A (en) * | 2015-12-25 | 2016-05-11 | 山东科技大学 | Preparation method of single-layer nano resistance film memristor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8605483B2 (en) * | 2008-12-23 | 2013-12-10 | Hewlett-Packard Development Company, L.P. | Memristive device and methods of making and using the same |
| CN101708990B (en) * | 2009-11-27 | 2012-08-08 | 电子科技大学 | Method for preparing nano-crystalline BST film |
| CN103236499B (en) * | 2013-05-07 | 2016-01-20 | 山东科技大学 | A kind of unipolar memristor and preparation method thereof |
| CN103594620B (en) * | 2013-11-05 | 2015-10-14 | 山东科技大学 | A kind of single-layer nano-film memristor and preparation method thereof |
| CN104795493A (en) * | 2015-04-21 | 2015-07-22 | 东北师范大学 | Nanowire array based memristor and manufacturing method thereof |
-
2016
- 2016-01-21 CN CN201711221184.4A patent/CN107833968B/en active Active
- 2016-01-21 CN CN201610040620.7A patent/CN105552224B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105576122A (en) * | 2015-12-25 | 2016-05-11 | 山东科技大学 | Preparation method of single-layer nano resistance film memristor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105552224A (en) | 2016-05-04 |
| CN107833968A (en) | 2018-03-23 |
| CN105552224B (en) | 2018-02-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Sun et al. | ABO 3 multiferroic perovskite materials for memristive memory and neuromorphic computing | |
| Guo et al. | Control of synaptic plasticity learning of ferroelectric tunnel memristor by nanoscale interface engineering | |
| Acharya et al. | Epitaxial brownmillerite oxide thin films for reliable switching memory | |
| CN103236499B (en) | A kind of unipolar memristor and preparation method thereof | |
| CN103594620B (en) | A kind of single-layer nano-film memristor and preparation method thereof | |
| Bejtka et al. | TEM nanostructural investigation of Ag-conductive filaments in polycrystalline ZnO-based resistive switching devices | |
| CN105576121B (en) | A kind of preparation method of flexible single-layer nano-film memristor | |
| Li et al. | 2D oriented covalent organic frameworks for alcohol-sensory synapses | |
| Wang et al. | Review of applications of 2D materials in memristive neuromorphic circuits | |
| Lv et al. | Nonvolatile bipolar resistive switching behavior in the perovskite-like (CH3NH3) 2FeCl4 | |
| Zuo et al. | Volatile threshold switching memristor: An emerging enabler in the AIoT era | |
| CN107833968B (en) | Memristor preparation method based on nanoscale single-layer resistive film | |
| Chu et al. | Growth and self-assembly of BaTiO3 nanocubes for resistive switching memory cells | |
| CN108447985A (en) | A kind of preparation method of the biological memristor based on banana skin | |
| CN113193111B (en) | Method for constructing multi-field coupling artificial synapse by electromagnetic regulation of manganese oxide | |
| CN108110136B (en) | Preparation method of single-layer resistive film memristor | |
| Khan et al. | Resistive switching properties in memristors for optoelectronic synaptic memristors: deposition techniques, key performance parameters, and applications | |
| Wang et al. | Transferable memristive nanoribbons comprising solution-processed strontium titanate nanocubes | |
| Gayakvad et al. | Spinel ferrites for resistive random access memory applications | |
| CN105591028B (en) | A kind of preparation method using LTCC greens band as the single-layer nano-film memristor of substrate | |
| Kolhatkar et al. | BiFe1–x Cr x O3 Ferroelectric Tunnel Junctions for Neuromorphic Systems | |
| Xie et al. | Graphene oxide-based random access memory: from mechanism, optimization to application | |
| Chen et al. | A two-terminal binary HfO 2 resistance switching random access memory for an artificial synaptic device | |
| CN105742487B (en) | A kind of preparation method of ambipolar nano-film memristor | |
| CN117529222B (en) | Topological phase change memristor with controllable conductive wire forming area and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |