CN109599488A - A kind of hair is preparing the application in memristor - Google Patents
A kind of hair is preparing the application in memristor Download PDFInfo
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- CN109599488A CN109599488A CN201811312239.7A CN201811312239A CN109599488A CN 109599488 A CN109599488 A CN 109599488A CN 201811312239 A CN201811312239 A CN 201811312239A CN 109599488 A CN109599488 A CN 109599488A
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- hair
- memristor
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- 210000004209 hair Anatomy 0.000 title claims abstract description 23
- 102000011782 Keratins Human genes 0.000 claims abstract description 18
- 108010076876 Keratins Proteins 0.000 claims abstract description 18
- 238000001035 drying Methods 0.000 claims abstract description 14
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000011259 mixed solution Substances 0.000 claims abstract description 10
- 239000000843 powder Substances 0.000 claims abstract description 10
- 229910052709 silver Inorganic materials 0.000 claims abstract description 9
- 239000004332 silver Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 8
- 210000002268 wool Anatomy 0.000 claims abstract description 8
- 239000000084 colloidal system Substances 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 239000006228 supernatant Substances 0.000 claims abstract description 7
- 239000011521 glass Substances 0.000 claims abstract description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 4
- RCEAADKTGXTDOA-UHFFFAOYSA-N OS(O)(=O)=O.CCCCCCCCCCCC[Na] Chemical compound OS(O)(=O)=O.CCCCCCCCCCCC[Na] RCEAADKTGXTDOA-UHFFFAOYSA-N 0.000 claims abstract description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000005119 centrifugation Methods 0.000 claims abstract description 4
- 239000003792 electrolyte Substances 0.000 claims abstract description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000006166 lysate Substances 0.000 claims abstract description 4
- 238000002156 mixing Methods 0.000 claims abstract description 4
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 4
- 239000011591 potassium Substances 0.000 claims abstract description 4
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 4
- 239000011734 sodium Substances 0.000 claims abstract description 4
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims abstract description 3
- 238000000576 coating method Methods 0.000 claims abstract description 3
- 239000010409 thin film Substances 0.000 claims abstract 2
- 239000000243 solution Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 3
- 238000004090 dissolution Methods 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- 229920006335 epoxy glue Polymers 0.000 claims 1
- 238000009738 saturating Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000004020 conductor Substances 0.000 description 8
- 238000003860 storage Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000502 dialysis Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000012620 biological material Substances 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 229910002902 BiFeO3 Inorganic materials 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N CuO Inorganic materials [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 102000002322 Egg Proteins Human genes 0.000 description 1
- 108010000912 Egg Proteins Proteins 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000004087 circulation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000012803 optimization experiment Methods 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Conductive Materials (AREA)
Abstract
The present invention provides a kind of hairs to prepare the application in memristor, is related to memory manufacturing technology field.By the sodium hydroxide of 0.25mol/L, the lauryl sodium sulfate of a, 0.4mol/L vulcanized sodium portion and 0.05mol/L are a, and three's equivalent is configured to mixed solution；Broken wool hair is uniformly mixed with mixed solution in the ratio that mass volume ratio is 1:15；And filter operation is carried out, the lysate of broken wool hair is obtained, the supernatant for taking centrifugation to obtain through centrifugally operated is dialysed 48 hours and dry with the bag filter of 300 mesh, is ground into ultra-fine keratin powder；The mass mixings such as obtained keratin powder and potassium hyperchlorate electrolyte 1:1 are prepared into complex colloid；Substrate is done with indium tin oxide transparent conducting glass ITO, is spun to complex colloid as middle layer on ito thin film as dielectric layer, and is drying in 60 DEG C of drying box in environment temperature；Substrate surface deposited metal silver by vacuum deposition method in coating dielectric layer does top electrode, obtains having silver/keratin/ITO structure memory resistor.
Description
Technical field
The present invention relates to a kind of memory manufacturing technology fields.
Background technique
Memory occupies always highly important status in the entire market IC.It was counted according to 2007, global memory city
The sales volume of field has been up to 60,000,000,000 dollars, and the market share is also constantly expanding.Memory used at present can be divided into
Two classes, the i.e. random access memory and nonvolatile memory of volatibility.The former major product have dynamic random access memory and
Static RAM, data rate memory is fast, but after terminating power supply, the data stored can disappear quickly, therefore store
Information need constantly refresh.The latter mainly has ROM (read-only memory), PROM (programmable storage), EEPROM (electrically erasable
Except memory), Flash (flash memory) etc., their storage speed is relatively slow, but still is able to continue to keep after having power-off
The characteristic of storing data has been widely used in various handheld terminals and multimedia equipment, and wherein Flash has become the most
The nonvolatile memory of mature mainstream.Market survey mechanism Databeans points out that whole world Flash sales volume reached in 2009
To 194.72 hundred million dollars, the 8.7% of semiconductor industry is accounted for, has reached 254.28 hundred million beauty in whole world Flash sales volume in 2010
Member, and increased trend year by year is presented.
Memristor random access memory is a kind of memory based on memristor effect, abbreviation memristor, structure and magnetic memory phase
Seemingly, storage unit is the sandwich structure that conductor/insulation body/conductor is constituted, but dielectric layer two sides not instead of magnetic material,
Conductor material.Under normal circumstances, conductor is metal, therefore the structure of memristor random access memory is conductor/insulation body/conductor type knot
Structure.By applying certain polar voltage pulse, the resistance of insulating layer can be in high-impedance state in conductor/insulation body/conductor structure
Reversible transformation is carried out between low resistance state, is achieved in the storage of information.Memristor random access memory has storage density high, reads and writes
The advantages that speed is fast, and structure is relatively easy.In addition, the manufacture craft of memristor random access memory is compatible with traditional CMOS technology
Property it is fine, high-volume easy to accomplish can integrate, the manufacturing of low cost.
Currently, the material for preparing memristor is mainly semiconductor, and such as ZnO, TiO2, CuO, NiO, BiFeO3, Fe2O3 etc.,
And some organic semiconducting materials, that such semiconductor material obtains is difficult, price is high, be not easily recycled, sustainable use rate is low,
And some semiconductor material has toxicity, has negative effect to environment and human body.Recently, many scientific research personnel are making
Begin to use nontoxic natural biologic material, such as silk, protein, egg white in standby memory resistor.But silk and protein
It is expensive, be not easy to obtain.We attempt to prepare memristor using natural biomaterial hair in the invention, utilize
Hair prepares memristor, not only realizes the secondary use of waste, and hair easily decomposes, pollution-free, sustainable use.Cause
This, prepares memristor using hair, will be significantly in the long run.
Summary of the invention
The object of the present invention is to provide a kind of hairs to prepare the application in memristor, it can efficiently solve hair conduct
The application problem of semiconductor material.
The purpose of the present invention is achieved through the following technical solutions: a kind of hair is preparing the application in memristor,
Specific step is as follows:
Step 1: the hair silk clean dry that will be collected into, crushes spare；
Step 2: preparing mixed solution:
The vulcanized sodium that the sodium hydroxide for being 0.25mol/L by molar concentration is a, molar concentration is 0.4mol/L it is a and
The lauryl sodium sulfate that molar concentration is 0.05mol/L is a, and three's equivalent stirs evenly, and is configured to mixed solution, spare；
Step 3: broken wool hair is mixed with the mixed solution that step 2 is prepared in the ratio that mass volume ratio is 1:15
Uniformly and dissolve hair；Then, the hair solution of dissolution is filtered operation, obtain broken wool hair lysate, then with
The revolving speed of 10000r/min carries out centrifugally operated 10min, and the supernatant for taking centrifugation to obtain is small with the bag filter dialysis 48 of 300 mesh
When, the supernatant after dialysis is put into T=50 DEG C of drying box drying of environment temperature, keratin crystal is obtained, is ground into ultra-fine
Keratin powder, it is spare；
Step 4: keratin powder that step 3 obtains is prepared into mass mixings such as potassium hyperchlorate electrolyte 1:1 mixed
Close colloid；
Step 5: substrate is done with indium tin oxide transparent conducting glass ITO, using complex colloid as middle layer spin coating
It is used as dielectric layer on to ITO film, and is drying 12 hours or more in 60 DEG C of drying box in environment temperature；
Step 6: the substrate surface deposited metal silver by vacuum deposition method in coating dielectric layer does top electrode, is had
There is silver/keratin/ITO structure memory resistor.
The interception of the bag filter of 300 mesh is 8000-14000 molecular weight.
The beneficial effects of the present invention are: use hair to prepare keratin film for raw material and on conductive substrate, into
One step is utilized waste and prepares useful device, waste product utilization is increased, so that manufacturing cost is very low, while the device being prepared into
Part has preferable room temperature memristor characteristic, and cyclical stability is good, can be used in the archetype for preparing memristor memory.
Can be realized the switch performance of higher rate, and it is at low cost, have extended cycle life.
Detailed description of the invention
Fig. 1 is that reduction method of the present invention prepares keratin superfines and prepares the flow chart of memory resistor
Fig. 2 is the memristor performance characterization comparison diagram of memory resistor prepared by the present invention
Fig. 3 is that the storge quality of memory resistor prepared by the present invention characterizes comparison diagram
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing to the present invention make into
The detailed description of one step, in which:
Hereinafter reference will be made to the drawings, and the present invention is described in detail.
Fig. 1 is the flow chart that ultra-fine keratin powder is extracted by reduction method, and on conductive substrate preparation structure be silver/
Keratin/ITO memory resistor flow chart.As shown in figure, silver/keratin/ITO memory resistor preparation of the present embodiment
Method, comprising the following steps:
Step 1: collecting enough hairlines, the hair silk clean dry that will be collected into is crushed spare.
Step 2: preparing mixed solution: the sodium hydroxide for being 0.25mol/L by molar concentration is a, molar concentration is
The lauryl sodium sulfate that the vulcanized sodium portion and molar concentration of 0.4mol/L is 0.05mol/L is a, and the stirring of three's equivalent is equal
It is even, it is configured to mixed solution, it is spare；
Step 3: broken wool hair is mixed with the mixed solution that step 2 is prepared in the ratio that mass volume ratio is 1:15
Uniformly and dissolve hair；Then, the hair solution of dissolution is filtered operation, obtain broken wool hair lysate, then with
The revolving speed of 10000r/min carries out centrifugally operated 10min, and the supernatant for taking centrifugation to obtain is small with the bag filter dialysis 48 of 300 mesh
When, the supernatant after dialysis is put into T=50 DEG C of drying box drying of environment temperature, keratin crystal is obtained, is ground into ultra-fine
Keratin powder, it is spare；
Step 4: keratin powder that step 3 obtains is prepared into mass mixings such as potassium hyperchlorate electrolyte 1:1 mixed
Close colloid；
Step 5: substrate is done with indium tin oxide transparent conducting glass ITO, using complex colloid as middle layer spin coating
It is used as dielectric layer on to ITO film, and is drying 12 hours or more in 60 DEG C of drying box in environment temperature；
Step 6: the surface deposited metal silver of substrate upper dielectric layer is done by top electrode by vacuum deposition method, is had
Silver/keratin/ITO structure memory resistor.
Fig. 2 is the storage performance phenogram of prepared memory resistor, and in memristor performance test, ITO electro-conductive glass is direct
As lower electrode, with area about 8mm2Silver is used as top electrode, using electrochemical workstation as the test two-used table of Current Voltage, constitutes
It tests circuit and carries out memristor performance test, result is as follows:
Fig. 2 (a) is to test circuit in electric current-voltage (I-V) figure that voltage scan range is -6V to 6V, and Fig. 2 (b) is it
The corresponding I-V diagram using logarithmic coordinates characterization, Cong Tuzhong is this it appears that prepared memory resistor is recalled with good
Inhibition effect.
Fig. 3 (a) is high low resistance state-cycle-index figure of memory resistor, as seen from the figure, the height of the memory resistor
Resistance ratios are about 160, and its cyclical stability is good, unobvious decaying after 150 circulations.Fig. 3 (b) is the memristor
The high-resistance resistors (HRS) and low resistance state resistance (LRS) of part high low resistance state-time diagram, You Tuke under -1.65V bias respectively
To find out, switchAfter second, substantially without any decaying.
By above-mentioned experiment it can be proved that there is the ultra-fine keratin powder that embodiment is prepared good memristor to deposit
Effect is stored up, which can be realized preferable room temperature memristor storage characteristics and cyclical stability is good.
In the present invention, conductive substrate is not limited to ITO electro-conductive glass, and other sheet metals or conductive film can also be used for this hair
It is bright；Top electrode is also not necessarily limited to silver, other metals or conductive oxide can be used in the present invention.
Finally, it is stated that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although passing through ginseng
According to optimization experiment of the invention, invention has been described, it should be appreciated by those of ordinary skill in the art that can be with
Various changes are made to it in the form and details, these changes are still within the scope of the present invention.
Claims (2)
1. a kind of hair is preparing the application in memristor, the specific steps are as follows:
Step 1: the hair silk clean dry that will be collected into, crushes spare；
Step 2: preparing solution:
The vulcanized sodium that the sodium hydroxide for being 0.25mol/L by molar concentration is a, molar concentration is 0.4mol/L it is a and mole
The lauryl sodium sulfate that concentration is 0.05mol/L is a, and three's equivalent stirs evenly, and is configured to mixed solution, spare；
Step 3: broken wool hair is uniformly mixed with the mixed solution that step 2 is prepared in the ratio that mass volume ratio is 1:15
And dissolve hair；Then, the hair solution of dissolution is filtered operation, obtains the lysate of broken wool hair, then with 10000r/
The revolving speed of min carries out centrifugally operated 10min, and the supernatant for taking centrifugation to obtain is dialysed 48 hours with the bag filter of 300 mesh, will be saturating
Supernatant after analysis is put into T=50 DEG C of drying box drying of environment temperature, obtains keratin crystal, is ground into ultra-fine keratin powder
End, it is spare；
Step 4: the mass mixings such as keratin powder that step 3 obtains and potassium hyperchlorate electrolyte 1:1 are prepared into epoxy glue
Body；
Step 5: substrate is done with indium tin oxide transparent conducting glass ITO, is spun to complex colloid as middle layer
It is used as dielectric layer on ito thin film, and is drying 12 hours or more in 60 DEG C of drying box in environment temperature；
Step 6: by vacuum deposition method coating dielectric layer substrate surface deposited metal silver do top electrode, obtain have silver/
Keratin/ITO structure memory resistor.
2. a kind of hair according to claim 1 is preparing the application in memristor, it is characterised in that: 300 purpose
The interception of bag filter is 8000-14000 molecular weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811312239.7A CN109599488A (en) | 2018-11-06 | 2018-11-06 | A kind of hair is preparing the application in memristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811312239.7A CN109599488A (en) | 2018-11-06 | 2018-11-06 | A kind of hair is preparing the application in memristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109599488A true CN109599488A (en) | 2019-04-09 |
Family
ID=65957719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811312239.7A Pending CN109599488A (en) | 2018-11-06 | 2018-11-06 | A kind of hair is preparing the application in memristor |
Country Status (1)
| Country | Link |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101630662A (en) * | 2009-08-20 | 2010-01-20 | 黑龙江大学 | Manufacturing method for protein structure quick switch memristor array |
| CN105633112A (en) * | 2015-12-30 | 2016-06-01 | 西安电子科技大学 | Super-light resistive random access memory and preparation method thereof |
| CN106953009A (en) * | 2017-04-28 | 2017-07-14 | 西南交通大学 | A kind of preparation method of memristor |
| CN107425119A (en) * | 2017-08-11 | 2017-12-01 | 河北大学 | A kind of resistive neurobionics device with organic-biological compatibility and its preparation method and application |
-
2018
- 2018-11-06 CN CN201811312239.7A patent/CN109599488A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101630662A (en) * | 2009-08-20 | 2010-01-20 | 黑龙江大学 | Manufacturing method for protein structure quick switch memristor array |
| CN105633112A (en) * | 2015-12-30 | 2016-06-01 | 西安电子科技大学 | Super-light resistive random access memory and preparation method thereof |
| CN106953009A (en) * | 2017-04-28 | 2017-07-14 | 西南交通大学 | A kind of preparation method of memristor |
| CN107425119A (en) * | 2017-08-11 | 2017-12-01 | 河北大学 | A kind of resistive neurobionics device with organic-biological compatibility and its preparation method and application |
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Application publication date: 20190409 |
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